CN110963460A - Two-dimensional material cleavage method - Google Patents
Two-dimensional material cleavage method Download PDFInfo
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- CN110963460A CN110963460A CN201811138228.1A CN201811138228A CN110963460A CN 110963460 A CN110963460 A CN 110963460A CN 201811138228 A CN201811138228 A CN 201811138228A CN 110963460 A CN110963460 A CN 110963460A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0004—Apparatus specially adapted for the manufacture or treatment of nanostructural devices or systems or methods for manufacturing the same
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
A two-dimensional material cleaving method, comprising: forming an insulating film coating on the surface of the parent lamellar crystal; sticking a heat release adhesive tape on the surface of the insulating film coating; uncovering the heat release adhesive tape to enable the heat release adhesive tape to be adhered to the insulating film coating, wherein the surface of the insulating film coating is provided with intermediate layered crystals formed by partial parent layered crystals; covering an adhesive stamp on the surface of the heat release tape, wherein the adhesive stamp covers the insulating film coating and the interlayer-shaped crystal; thermally treating the heat release tape to separate the heat release tape from the adhesive stamp and the heat release tape from the insulating film coating; then, pressing the adhesive stamp, the middle layered crystal and the insulating film plating layer on the substrate, wherein the insulating film plating layer is in contact with the substrate; and then, uncovering the adhesive seal, and taking away part of the intermediate layered crystal on the surface of the adhesive seal so as to form a two-dimensional material on the surface of the insulating film coating. The method can prepare large-area high-quality two-dimensional materials and broaden a two-dimensional material library.
Description
Technical Field
The invention relates to the technical field of nano material preparation, in particular to a two-dimensional material cleavage method.
Background
A two-dimensional material refers to a crystalline material consisting of a single atomic layer or several atomic layers. Most two-dimensional materials are available from their corresponding three-dimensional parent materials. For example, a single atomic layer of carbon, i.e., graphene, may be derived from layered graphite. In graphite, the carbon between atomic layers is connected by van der waals forces, which are weaker than covalent bonds or ionic bonds, and thus graphite can be more easily separated from the layers to obtain a single layer of graphene as if a sheet of paper were taken out of a book. In 2004, the geom group mechanically cleaved graphite using scotch tape, and obtained single-layer graphene for the first time. The mechanical cleavage mode is suitable for a plurality of laminar materials like graphite, so that the field of two-dimensional materials has unprecedented development.
The two-dimensional material has many physical properties different from those of the three-dimensional parent material, and the two-dimensional material is more sensitive to external regulation and is easier to regulate, so that the two-dimensional material has superior properties which the three-dimensional parent material does not have in the application aspects such as spintronics, optoelectronics and the like. In addition, a new structure formed after the two-dimensional material is stacked, namely a van der waals heterojunction, has unknown excellent performance, and the existing material system is greatly expanded.
However, there is a need for a method for preparing large-area high-quality two-dimensional materials suitable for a large amount of materials.
Disclosure of Invention
The invention provides a two-dimensional material cleavage method, which is used for separating large-area and high-quality two-dimensional materials from a plurality of parent laminar materials and widening a two-dimensional material library.
In order to solve the above problems, the present invention provides a two-dimensional material cleavage method, comprising: providing a matrix layered crystal, a heat release adhesive tape, an adhesive stamp and a substrate; forming an insulating film coating on the surface of the parent lamellar crystal; sticking a heat release adhesive tape on the surface of the insulating film coating; uncovering the heat release adhesive tape to enable the heat release adhesive tape to be adhered to the insulating film coating, wherein the surface of the insulating film coating is provided with intermediate layered crystals formed by partial parent layered crystals; covering an adhesive stamp on the surface of the heat release tape, wherein the adhesive stamp covers the insulating film coating and the intermediate layered crystal; thermally treating the thermal release adhesive tape to separate the thermal release adhesive tape from the adhesive stamp and the thermal release adhesive tape from the insulating film coating; after the heat release adhesive tape is subjected to heat treatment, pressing the adhesive seal, the middle layered crystal and the insulating film coating on the substrate, wherein the insulating film coating is in contact with the substrate; and after the adhesive seal, the middle layered crystal and the insulating film plating layer are pressed on the substrate, the adhesive seal is uncovered, and part of the middle layered crystal is taken away by the surface of the adhesive seal, so that a two-dimensional material is formed on the surface of the insulating film plating layer.
Optionally, the parent layered crystal has opposing first and second faces; the two-dimensional material cleavage method further includes: providing an adhesive tape; before an insulating film coating is formed on the surface of the parent laminar crystal, the parent laminar crystal is adhered to the surface of the adhesive tape, and the first surface of the parent laminar crystal is in contact with the adhesive tape; and after the parent laminar crystal is adhered to the surface of the adhesive tape, forming the insulating film coating on the second surface of the parent laminar crystal.
Optionally, the material of the ultra-vacuum adhesive tape comprises a polyimide film material, an acrylic adhesive material or a silicone adhesive material.
Optionally, the step of adhering the parent lamellar crystal to the surface of the adhesive tape is performed in an inert gas environment.
Optionally, the material of the insulating film plating layer includes aluminum oxide, silicon oxide, magnesium oxide, or titanium dioxide.
Optionally, the process for forming the insulating film plating layer includes an evaporation process, a sputtering process, or an electroplating process.
Optionally, the insulating film plating layer is made of aluminum oxide; the process for forming the insulating film coating is an evaporation process, and parameters comprise: the oxygen partial pressure of the evaporation environment is 1E-4 mbar-2E-4 mbar, and the evaporation source is aluminum.
Optionally, the thickness of the insulating film plating layer is more than 50 nanometers.
Optionally, the thickness of the insulating film coating is 50 nm to 200 nm.
Optionally, the step of forming an insulating film coating on the surface of the parent lamellar crystal is performed in a high vacuum environment.
Optionally, the step of adhering a heat release tape on the surface of the insulating film coating is performed in an inert gas environment; the step of lifting the thermal release tape is carried out in an inert gas environment; the step of covering and adhering a seal on the surface of the heat release adhesive tape is carried out in an inert gas environment; the step of heat-treating the thermal release tape is performed in an inert gas atmosphere; the step of pressing the adhesive stamp, the intermediate layered crystal and the insulating film plating layer on the substrate is performed in an inert gas environment; the step of lifting off the adhered stamp is performed in an inert gas atmosphere.
Optionally, the material of the adhesive stamp includes a polymer.
Optionally, the polymer comprises polydimethylsiloxane.
Optionally, the temperature of the heat-treatment heat-release adhesive tape is 115 to 125 ℃.
Optionally, before the adhering stamp, the intermediate layered crystal, and the insulating film plating layer are pressed on the substrate, the method further includes: and cleaning the surface of the substrate.
Optionally, the cleaning process comprises a plasma process.
Optionally, the plasma treatment is oxygen plasma.
Optionally, the two-dimensional material comprises a single layer of MoS2Single layer TaS2Single layer of Fe3GeTe2Single layer VSe2Single layer FeSe, single layer CrI3Single layer of Cr2Ge2Te6Single layer WSe2Single layer WS2Single layer WTE2Or a single layer of black phosphorus.
Optionally, the two-dimensional material has a lateral length of 100 microns or more.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the two-dimensional material cleavage method provided by the technical scheme of the invention, the insulating film coating is formed on the surface of the parent laminar crystal, the insulating film coating and the parent laminar crystal material have high adhesiveness, and the insulating film coating can have a large contact area with the parent laminar crystal. Since the insulating film plating layer has a great adhesiveness to the parent layered crystal material, the insulating film plating layer has a great adhesiveness to the intermediate layered crystal. Because the insulating film coating and the intermediate layered crystal have great adhesiveness, after the adhesive stamp is uncovered, a two-dimensional material with higher quality can be formed on the surface of the insulating film coating, which is specifically represented as follows: the uniformity of the two-dimensional material is high, and the defects of the two-dimensional material are few. Since the insulating film plating layer has a large area, a large area of two-dimensional material can be formed on the surface of the insulating film plating layer. The insulating film coating is adhered to the surface of the substrate to realize that the two-dimensional material is fixed on the substrate, so that the formation of the two-dimensional material is not limited by the substrate material, and the variety of the two-dimensional material can be widened. Because a liquid phase method is not utilized, the two-dimensional material is not exposed to an organic solvent in the preparation process, so that the method is suitable for manufacturing the two-dimensional material sensitive to the organic solvent, and the variety of the prepared two-dimensional material can be widened.
And secondly, the insulating film coating is an insulating material, and the insulating film coating does not influence the measurement process of the electric transport property of the two-dimensional material. The insulating film coating does not need to be etched and removed, so that the problem of etching damage to the two-dimensional material is solved, and the quality of the two-dimensional material is improved.
Drawings
FIG. 1 is a flow chart of a two-dimensional material cleaving process in one embodiment of the present invention;
fig. 2 to 13 are schematic structural diagrams of a two-dimensional material cleaving process according to an embodiment of the present invention.
Detailed Description
As discussed in the background, the two-dimensional materials formed by the prior art have poor properties.
Methods for preparing two-dimensional materials include mechanical cleavage, liquid phase cleavage, chemical vapor deposition, and molecular beam epitaxy.
Taking the preparation of the two-dimensional material as graphene as an example, the mechanical cleavage method is to press graphite onto the surface of a substrate material by using a transparent adhesive tape to peel off the graphite, and finally obtain single-layer or few-layer graphite. The method is mainly limited by Van der Waals force between the adhesive tape and the two-dimensional material and Van der Waals force between the two-dimensional material and the substrate, so that the prepared two-dimensional material is less in type and small in area, and the surface of the two-dimensional material is easy to have residual adhesive to influence the quality of the two-dimensional material.
Another method is to cleave the two-dimensional material by using strong adhesion between gold and the two-dimensional material, but in this method, if gold is left at last, the conductivity of gold is not easy to measure the further electric transport property of the two-dimensional material, and the gold is usually etched to remove at last, so that the surface of the two-dimensional material is easily polluted and damaged.
The liquid phase cleavage method is to separate the layered matrix material from the layers using ultrasonic vibration. The two-dimensional material prepared by the liquid phase cleavage method also has the defect of small area. And the two-dimensional material is exposed to an organic solvent during the preparation process, so that the method is not suitable for the two-dimensional material sensitive to the organic solvent, and the kind of the prepared two-dimensional material is limited.
Chemical vapor deposition methods enable the synthesis of large areas of two-dimensional materials. However, the two-dimensional material film is prone to have a problem of poor uniformity, thereby causing the quality of the two-dimensional material to be affected.
Molecular beam epitaxy is capable of synthesizing large-area two-dimensional materials, but since the materials synthesized by this method often need to be lattice-matched to the substrate used and their physical properties are affected by the substrate, the kinds of the synthesized two-dimensional materials are limited.
At present, a method for preparing a large-area high-quality two-dimensional material suitable for more materials does not exist.
On this basis, the present invention provides a two-dimensional material cleaving method, please refer to fig. 1, which includes the following steps:
s01: providing a matrix layered crystal, a heat release adhesive tape, an adhesive stamp and a substrate;
s02: forming an insulating film coating on the surface of the parent lamellar crystal;
s03: sticking a heat release adhesive tape on the surface of the insulating film coating;
s04: uncovering the heat release adhesive tape to enable the heat release adhesive tape to be adhered to the insulating film coating, wherein the surface of the insulating film coating is provided with intermediate layered crystals formed by partial parent layered crystals;
s05: covering an adhesive stamp on the surface of the heat release tape, wherein the adhesive stamp covers the insulating film coating and the intermediate layered crystal;
s06: thermally treating the thermal release adhesive tape to separate the thermal release adhesive tape from the adhesive stamp and the thermal release adhesive tape from the insulating film coating;
s07: after the heat release adhesive tape is subjected to heat treatment, pressing the adhesive seal, the middle layered crystal and the insulating film coating on the substrate, wherein the insulating film coating is in contact with the substrate;
s08: and after the adhesive seal, the middle layered crystal and the insulating film plating layer are pressed on the substrate, the adhesive seal is uncovered, and part of the middle layered crystal is taken away by the surface of the adhesive seal, so that a two-dimensional material is formed on the surface of the insulating film plating layer.
The method can separate large-area and high-quality two-dimensional materials from a plurality of parent laminar materials and broaden a two-dimensional material library.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 to 13 are schematic structural diagrams of a two-dimensional material cleaving process according to an embodiment of the present invention.
Referring to fig. 2, a parent layered crystal 100 is provided.
The parent layered crystal 100 is a three-dimensional structure material. Followed by the peeling of the two-dimensional material from the parent lamellar crystals 100.
The material of the parent layered crystal 100 includes MoS2、TaS2、Fe3GeTe2、VSe2、FeSe、CrI3、Cr2Ge2Te6、WSe2、WS2、WTe2Or black phosphorus.
In this embodiment, the material of the parent lamellar crystal 100 is Fe3GeTe2The two-dimensional material formed subsequently is single-layer Fe3GeTe2The description is for the sake of example.
In other embodiments, the material of the parent layered crystal may also be other materials.
The parent layered crystal 100 has opposing first and second faces 101, 102.
The first face 101 and the second face 102 are parallel to the plane of atomic distribution of the layers in the parent lamellar crystal 100.
Referring to fig. 3, an adhesive tape 110 is provided.
The material of the adhesive tape 110 includes a polyimide film material, an acrylic adhesive material, or a silicone adhesive material. The material of the tape 110 may be other materials.
In this embodiment, the material of the adhesive tape 110 includes a polyimide film material, an acrylic adhesive material or a silicone adhesive material, and has the following advantages: the adhesive tape 110 can be suitable for use in an ultra-high vacuum environment, and when the adhesive tape 110 is used in the ultra-high vacuum environment, the adhesive tape 110 does not release air bubbles, so that the ultra-high vacuum environment is prevented from being polluted.
Referring to fig. 4, the mother layered crystal 100 is adhered to the surface of the tape 110, and the first surface 101 is in contact with the tape 110.
In this embodiment, the step of adhering the precursor layered crystal 100 to the surface of the tape 110 is performed in an inert gas atmosphere, which is advantageous in that: avoiding contamination of the parent layered crystal 100; even if the chemical properties of the parent layered crystal 100 are very unstable, it is ensured that the parent layered crystal 100 is not contaminated by the process environment.
The inert gas comprises argon.
Referring to fig. 5, after the mother layered crystal 100 is attached to the surface of the tape 110, an insulating thin film plating layer 130 is formed on the surface of the mother layered crystal 100.
Specifically, an insulating film plating layer 130 is formed on the second surface 102 of the mother layered crystal 100.
The material of the insulating thin film plating layer 130 includes aluminum oxide, silicon oxide, magnesium oxide, or titanium dioxide. The material of the insulating film plating layer 130 may also be other insulating materials.
In this embodiment, when the material of the insulating thin film plating layer 130 is aluminum oxide, the adhesion between the insulating thin film plating layer 130 and the mother layered crystal 100 is larger.
The process of forming the insulating film plating layer 130 includes an evaporation process, a sputtering process, or an electroplating process.
The step of forming the insulating thin film plating layer 130 on the surface of the parent layered crystal 100 is performed in a high vacuum environment, which includes a rough vacuum environment or an ultra-high vacuum environment.
In this embodiment, the insulating film plating layer 130 is made of aluminum oxide; the process for forming the insulating film coating 130 is an evaporation process, and the parameters include: the oxygen partial pressure of the evaporation environment is 1E-4 mbar-2E-4 mbar, and the evaporation source is aluminum. The equipment used for forming the insulating film coating 130 is a thermal evaporation coating machine.
In the embodiment, the oxygen partial pressure of the evaporation environment is 1E-4 mbar-2E-4 mbar, so that the material of the evaporation source can be completely oxidized.
In this embodiment, the thickness of the insulating thin film plating layer 130 is 50 nm or more, and the meaning of the range of the thickness of the insulating thin film plating layer 130 is: if the thickness of the insulating film plating layer 130 is less than 50 nm, the insulating film plating layer 130 is easily broken in the subsequent process of peeling off the heat release tape, and the area of the finally formed two-dimensional material is reduced.
In a specific embodiment, the thickness of the insulating thin film plating layer 130 is 50 nm to 200 nm. The thickness of the insulating film plating layer 130 is below 200 nm, so that the cost of the insulating film plating layer 130 is reduced, and the use requirement is met.
The insulating film plating layer 130 is formed on the surface of the parent laminar crystal 100, the insulating film plating layer 130 has a large adhesion with the material of the parent laminar crystal 100, and the insulating film plating layer 130 has a large contact area with the parent laminar crystal 100.
In this embodiment, after the insulating thin film plating layer 130 is formed, the subsequent steps are performed in an inert gas atmosphere, which can prevent hydrogen from being adsorbed on the surface of the insulating thin film plating layer 130 and prevent the adhesion between the insulating thin film plating layer 130 and the material of the mother layered crystal 100 from being reduced.
Referring to fig. 6, a thermal release tape 140 is provided; a heat release tape 140 is adhered to the surface of the insulating film plating layer 130.
The adhesiveness of the heat release tape 140 can disappear under the heat treatment.
In this embodiment, the step of attaching the heat release tape 140 to the surface of the insulating film plating layer 130 is performed in an inert gas atmosphere.
Referring to fig. 7, after a heat release tape 140 is attached to the surface of the insulating film plating layer 130, the heat release tape 140 is peeled off to adhere the heat release tape 140 to the insulating film plating layer 130, and the surface of the insulating film plating layer 130 has intermediate layered crystals 150 composed of partial parent layered crystals 100.
In this embodiment, the step of peeling off the thermal release tape 140 is performed in an inert gas atmosphere.
Since the insulating film plating layer 130 has strong adhesion to the parent layered crystal 100, the insulating film plating layer 130 takes away the material of the parent layered crystal 100 during the process of peeling off the heat release tape 140, so that the surface of the insulating film plating layer 130 has the intermediate layered crystal 150 formed by a part of the parent layered crystal 100.
The intermediate layered crystal 150 has a thickness uniformity that varies across areas, e.g., more atomic layers of material in some areas and a single atomic layer of material in some areas. And the intermediate layered crystal 150 is subsequently subjected to a thermal process of heat-treating the heat release tape 140, atoms on the surface of the intermediate layered crystal 150 are degenerated, and thus the intermediate layered crystal 150 cannot be used as a final two-dimensional material with high quality.
Since the insulating film plating layer 130 has a great adhesiveness with the material of the parent layered crystal 100, the insulating film plating layer 130 has a great adhesiveness with the intermediate layered crystal 150.
Referring to fig. 8, an adhesive stamp 160 is provided; after the thermal release tape 140 is peeled off, an adhesive stamp 160 covers the surface of the thermal release tape 140, and the adhesive stamp 160 covers the insulating film plating layer 130 and the intermediate layered crystal 150.
The material of the adhesive stamp 160 includes a polymer. The polymer comprises polydimethylsiloxane.
In this embodiment, the step of covering the thermal release tape 140 with the adhesive stamp 160 is performed in an inert gas atmosphere.
Referring to fig. 9, the thermal release tape 140 is heat-treated to separate the thermal release tape 140 from the adhesive stamp 160 and the thermal release tape 140 from the insulating film plating layer 130.
The thermal release tape 140 is heat-treated to release the adhesiveness of the thermal release tape 140, thereby separating the thermal release tape 140 from the adhesive stamp 160 and the thermal release tape 140 from the insulating film plating layer 130.
In this embodiment, the step of heat-treating the thermal release tape 140 is performed in an inert gas atmosphere.
In a specific embodiment, the temperature at which the thermal release tape 140 is heat treated is 115 degrees celsius to 125 degrees celsius, such as 120 degrees celsius. This has the advantages that: the temperature of the heat treatment is below 125 ℃, so that the adhesive seal 160 can bear the temperature of the heat treatment, and the performance of the adhesive seal 160 is prevented from being influenced; the temperature of the heat treatment is above 115 ℃, which is beneficial to releasing the viscosity of the heat release adhesive tape 140.
Referring to fig. 10, a substrate 170 is provided.
In this embodiment, the substrate 170 is made of silicon dioxide.
In other embodiments, the material of the substrate may be alumina or silicon wafer.
Referring to fig. 11, a cleaning process is performed on the surface of the substrate 170.
The cleaning process includes a plasma process.
And cleaning the surface of the substrate 170 to remove impurities on the surface of the substrate 170, so that the cleanliness of the surface of the substrate 170 is improved, and the adhesion between the subsequent insulating film plating layer 130 and the substrate 170 can be improved.
In this example, oxygen plasma was used for the plasma treatment.
In this embodiment, the oxygen plasma is used to clean the surface of the substrate 170 instead of the other plasma, which is advantageous in that: the oxygen plasma may clean the surface of the substrate 170 and activate the surface of the substrate 170 to increase its adhesion.
In other embodiments, the surface of the substrate may not be cleaned.
Referring to fig. 12, the adhesive stamp 160, the intermediate layered crystal 150, and the insulating film plating layer 130 are pressed on the substrate 170, and the insulating film plating layer 130 is in contact with the substrate 170.
In this embodiment, after the thermal release tape 140 is thermally treated and the surface of the substrate 170 is cleaned, the adhesive stamp 160, the intermediate layered crystal 150, and the insulating film plating layer 130 are pressed on the substrate 170, and the adhesive stamp 160 and the insulating film plating layer 130 are in contact with the substrate 170, respectively.
In this embodiment, the step of pressing the adhesive stamp 160, the intermediate layered crystal 150, and the insulating film plating layer 130 on the substrate 170 is performed in an inert gas atmosphere.
Referring to fig. 13, after the adhesive stamp 160, the intermediate layered crystal 150 and the insulating film plating layer 130 are pressed on the substrate 170, the adhesive stamp 160 is lifted, and a part of the intermediate layered crystal 150 is taken away from the surface of the adhesive stamp 160, so that a two-dimensional material 180 is formed on the surface of the insulating film plating layer 130.
In this embodiment, the speed of removing the adhered stamp 160 is faster, which has the following advantages: increasing the adhesion between the adherent stamp 160 and the intermediate laminar crystal 150 increases the likelihood of forming the two-dimensional material 180.
In this embodiment, the step of removing the adhesive stamp 160 is performed in an inert gas atmosphere.
The two-dimensional material 180 comprises a single layer of MoS2Single layer TaS2Single layer of Fe3GeTe2Single layer VSe2Single layer FeSe, single layer CrI3Single layer of Cr2Ge2Te6Single layer WSe2Single layer WS2Single layer WTE2Or a single layer of black phosphorus.
In this embodiment, the two-dimensional material 180 is a single layer of Fe3GeTe2An example is made.
The existing mechanical dissociation method can only easily dissociate partial two-dimensional materials such as graphene, boron nitride and MoS2And the area of the obtained two-dimensional material is very small. The existing mechanical dissociation method is difficult to dissociate such as Fe3GeTe2、TaS2、VSe2、FeSe、CrI3、Cr2Ge2Te6、WSe2、WS2、WTe2Or a two-dimensional material of black phosphorus material.
The method of this example is not only capable of dissociating to give, for example, MoS2Two-dimensional material of the material, and can also be dissociated into Fe3GeTe2、TaS2、VSe2、FeSe、CrI3、Cr2Ge2Te6、WSe2、WS2、WTe2Or black phosphorus, and can be easily obtained.
In this embodiment, the two-dimensional material 180 has a lateral length of 100 microns or more. The transverse length refers to: a length of the two-dimensional material 180 within a plane of atomic distribution of the two-dimensional material 180.
Because the insulating thin film plating layer 130 has a great adhesiveness with the intermediate layered crystal 150, after the adhesive stamp 160 is lifted off, the surface of the insulating thin film plating layer 130 can form a two-dimensional material 180 with a high quality, which is specifically represented by: the two-dimensional material 180 has a high uniformity and the two-dimensional material 180 has fewer defects.
Since the insulating film plating layer 130 has a large area, the two-dimensional material 180 can be formed on the surface of the insulating film plating layer 130 in a large area.
In this embodiment, the insulating film plating layer 130 is adhered to the surface of the substrate 170 to realize that the two-dimensional material 180 is fixed on the substrate 170, so that the formation of the two-dimensional material 180 is not limited by the material of the substrate 170, so that the variety of the two-dimensional material 180 can be widened.
In this embodiment, a liquid phase method is not utilized, and thus the two-dimensional material 180 is not exposed to an organic solvent during the preparation process, so the method of this embodiment is suitable for manufacturing the two-dimensional material 180 sensitive to an organic solvent, the variety of the prepared two-dimensional material 180 can be widened, and the quality of the two-dimensional material 180 is not affected by the liquid phase solvent.
In this embodiment, the insulating film plating layer 130 is an insulating material, and the insulating film plating layer 130 does not affect the measurement process of the electrical transport property of the two-dimensional material 180.
In this embodiment, the insulating film plating layer 130 does not need to be removed by etching, so that there is no problem of etching damage to the two-dimensional material 180, and the quality of the two-dimensional material 180 is improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (19)
1. A method of cleaving a two-dimensional material, comprising:
providing a matrix layered crystal, a heat release adhesive tape, an adhesive stamp and a substrate;
forming an insulating film coating on the surface of the parent lamellar crystal;
sticking a heat release adhesive tape on the surface of the insulating film coating;
uncovering the heat release adhesive tape to enable the heat release adhesive tape to be adhered to the insulating film coating, wherein the surface of the insulating film coating is provided with intermediate layered crystals formed by partial parent layered crystals;
covering an adhesive stamp on the surface of the heat release tape, wherein the adhesive stamp covers the insulating film coating and the intermediate layered crystal;
thermally treating the thermal release adhesive tape to separate the thermal release adhesive tape from the adhesive stamp and the thermal release adhesive tape from the insulating film coating;
after the heat release adhesive tape is subjected to heat treatment, pressing the adhesive seal, the middle layered crystal and the insulating film coating on the substrate, wherein the insulating film coating is in contact with the substrate;
and after the adhesive seal, the middle layered crystal and the insulating film plating layer are pressed on the substrate, the adhesive seal is uncovered, and part of the middle layered crystal is taken away by the surface of the adhesive seal, so that a two-dimensional material is formed on the surface of the insulating film plating layer.
2. A method for cleaving a two-dimensional material according to claim 1, wherein the parent layered crystal has a first face and a second face opposite to each other; the two-dimensional material cleavage method further includes: providing an adhesive tape;
before an insulating film coating is formed on the surface of the parent laminar crystal, the parent laminar crystal is adhered to the surface of the adhesive tape, and the first surface of the parent laminar crystal is in contact with the adhesive tape; and after the parent laminar crystal is adhered to the surface of the adhesive tape, forming the insulating film coating on the second surface of the parent laminar crystal.
3. The two-dimensional material cleaving method of claim 2, wherein the material of the tape comprises a polyimide film material, an acrylic adhesive material, or a silicone adhesive material.
4. A method for cleaving a two-dimensional material according to claim 2, wherein the step of adhering the precursor layered crystal to the surface of the adhesive tape is performed in an inert gas atmosphere.
5. The two-dimensional material cleaving method of claim 1, wherein the material of the insulating thin film plating layer includes aluminum oxide, silicon oxide, magnesium oxide, or titanium dioxide.
6. The two-dimensional material cleavage method according to claim 1, wherein the process of forming the insulating film plating layer includes an evaporation process, a sputtering process, or an electroplating process.
7. The two-dimensional material cleavage method according to claim 1, wherein a material of the insulating film plating layer is alumina; the process for forming the insulating film coating is an evaporation process, and parameters comprise: the oxygen partial pressure of the evaporation environment is 1E-4 mbar-2E-4 mbar, and the evaporation source is aluminum.
8. The two-dimensional material cleavage method according to claim 1, wherein the thickness of the insulating thin film plating layer is 50 nm or more.
9. The two-dimensional material cleaving method of claim 8, wherein the thickness of the insulating thin film plating layer is 50 nm to 200 nm.
10. A two-dimensional material cleavage method according to claim 1, wherein the step of forming an insulating film coating layer on the surface of the mother layered crystal is performed in a high vacuum environment.
11. The two-dimensional material cleavage method according to claim 1, wherein the step of attaching a heat-releasing tape on the surface of the insulating film coating layer is performed in an inert gas atmosphere; the step of lifting the thermal release tape is carried out in an inert gas environment; the step of covering and adhering a seal on the surface of the heat release adhesive tape is carried out in an inert gas environment; the step of heat-treating the thermal release tape is performed in an inert gas atmosphere; the step of pressing the adhesive stamp, the intermediate layered crystal and the insulating film plating layer on the substrate is performed in an inert gas environment; the step of lifting off the adhered stamp is performed in an inert gas atmosphere.
12. A method according to claim 1, wherein the material of the adhesive stamp comprises a polymer.
13. The method of claim 12, wherein the polymer comprises polydimethylsiloxane.
14. The two-dimensional material cleavage method according to claim 1, wherein a temperature at which the thermal release tape is heat-treated is 115 degrees celsius to 125 degrees celsius.
15. The two-dimensional material cleaving method of claim 1, wherein prior to pressing the adhesive stamp, the intermediate layered crystal, and the insulating film plating layer onto the substrate, further comprising: and cleaning the surface of the substrate.
16. The two-dimensional material cleaving method of claim 15, wherein the cleaning process comprises a plasma process.
17. The two-dimensional material cleaving method of claim 16, wherein the plasma treatment employs an oxygen plasma.
18. The two-dimensional material cleaving method of claim 1, wherein the two-dimensional material comprises a single layer of MoS2Single layer TaS2Single layer of Fe3GeTe2Single layer VSe2Single layer FeSe, single layer CrI3Single layer of Cr2Ge2Te6Single layer WSe2Single layer WS2Single layer WTE2Or a single layer of black phosphorus.
19. A two-dimensional material cleaving method according to claim 1, wherein a lateral length of the two-dimensional material is above 100 micrometers.
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