CN110957896A - A plurality of MOSFET pipe parallel circuit convenient to detect - Google Patents
A plurality of MOSFET pipe parallel circuit convenient to detect Download PDFInfo
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- CN110957896A CN110957896A CN201910726566.5A CN201910726566A CN110957896A CN 110957896 A CN110957896 A CN 110957896A CN 201910726566 A CN201910726566 A CN 201910726566A CN 110957896 A CN110957896 A CN 110957896A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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Abstract
The invention discloses a parallel circuit of a plurality of MOSFET tubes, which is convenient to detect. The circuit is characterized in that: and a driving diode is additionally arranged between each MOSFET tube grid driving resistor and the driving signal reserved port, the anode of each driving diode is connected with the common driving signal reserved port, and a detection point is led out from between each driving resistor and the respective connected MOSFET tube grid. When the MOSEFET tube in the circuit needs to be detected, the external detection circuit connects the driving source Vg to a detection point corresponding to the MOSFET tube to be detected. The scheme provided by the invention realizes the drive isolation of other MOSFET tubes when detecting a single MOSFET tube in the multi-MOSFET tube parallel circuit on the premise of not influencing the normal work of the multi-MOSFET tube parallel circuit by slightly changing the multi-MOSFET tube parallel circuit. The circuit is changed a little, the structure is succinct, easy to use.
Description
Technical Field
The invention provides a parallel circuit of a plurality of MOSEFET tubes, which is convenient for detection. The detection field of a plurality of MOSFET parallel circuits for realizing power expansion in high-power low-voltage equipment such as a switching power supply, a motor controller and the like is related.
Background
In high-power low-voltage devices such as a switching power supply and a motor controller, a plurality of MOSFET transistors are usually connected in parallel to expand power. In a conventional parallel application of MOSFET tubes, the gates of a plurality of MOSFET tubes connected in parallel are connected in parallel to the same control signal terminal. When the driving signal is used for controlling, all the parallel MOSFET tubes can be simultaneously switched on or switched off, so that the state of one MOSFET tube cannot be judged according to external electrical characteristics. Similarly, when one of the MOSFET tubes fails, the electrical characteristics of the MOSFET tube connected in parallel are the characteristics of the failed MOSFET tube, which can not be determined to actually fail, and thus the failure detection and troubleshooting efficiency is greatly affected.
In the existing checking scheme, a sampling resistor is connected to a source electrode or a drain electrode of each parallel MOSFET tube in a general mode. When an external driving signal is applied, the voltage change on the sampling resistor corresponding to each MOSFET is detected to determine which MOSFETs in the multiple MOSFET tube parallel circuits are normal. As shown in fig. 1, the external driving signal Vg is connected to the gates of the switching transistors MOSFET1 and MOSFET2 through resistors RG1 and RG2, respectively. Sampling resistors RS1 and RS2 are respectively connected between the source electrode of the switching tube MOSFET1 and the ground end and between the source electrode of the switching tube MOSFET2 and the ground end. When a fault occurs, the state judgment of the corresponding MOSFET is realized by detecting the voltage change on the sampling resistor.
The prior art has the disadvantages that the sampling resistor is connected in series in the power path of each MOSFET, which causes the increase of system loss, and the selection of the resistor needs to take into account the power requirement and the precision requirement, which causes additional difficulty.
Disclosure of Invention
On the basis of the existing parallel circuit of a plurality of MOSFET tubes, the invention is additionally provided with corresponding driving diodes; and the detection points are skillfully arranged to connect an external driving signal, so that the driving isolation of other MOSFET tubes is realized when a single MOSFET tube in a plurality of MOSFET tube parallel circuits is detected.
The circuit comprises a plurality of MOSFET tubes connected in parallel, a plurality of sampling resistors and a plurality of driving diodes. The method is characterized in that: and a driving diode is arranged between the grid of each MOSFET and the public driving signal reserved port, and the anode of each driving diode is connected with the public driving signal reserved port. And a detection point is arranged between the cathode of each driving diode and the grid of the corresponding MOSFET for connecting an external driving signal. And the external driving signal is connected to a detection point set for the MOSFET to be detected to test so as to detect the state of the MOSFET to be detected.
Furthermore, the gate driving circuit of each MOSFET in the circuit further includes one or more driving resistors to limit the amount of current flowing to the gate of each MOSFET when the MOSFET is turned on.
Further, an external driving signal Vg is connected to a detection point set for the MOSFET to be tested through two parallel driving diodes, wherein an anode of one driving diode and a cathode of the other driving diode are connected to the external driving signal. The external driving signal Vg can also be connected to the public driving signal reserved port through a high-impedance resistor; and a voltage-dividing bleeder resistor is arranged between the grid electrode of each MOSFET and the ground terminal. When the accessed external driving signal is on, the external driving signal is subjected to voltage division to make other parallel MOSFET tubes except the MOSFET tube to be detected not be conducted, and the driving isolation of other MOSFET tubes is realized when a single MOSFET tube in a plurality of MOSFET tube parallel circuits is detected. Meanwhile, when the accessed external driving signal is on, a discharge channel is provided for the electric charge accumulated on the grid electrode of each MOSFET.
Drawings
FIG. 1 shows a conventionalA fault detection circuit schematic diagram of a plurality of MOSFET parallel circuits;
FIG. 2 is a schematic diagram of a parallel circuit of multiple MOSFET devices for easy detection according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a parallel circuit of a plurality of MOSFET transistors for easy detection according to another embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages solved by the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
One embodiment of a multiple MOSFET parallel circuit for easy detection provided by the present invention is shown in fig. 2. The circuit comprises two MOSFET1 and MOSFET2 connected in parallel, two driving diodes DG1 and DG2, and two bleeder resistors Rgs1 and Rgs 2. The driving diode DG1 is connected between the gate of the switching transistor MOSFET1 and the common driving signal reserved port, and the driving diode DG2 is connected between the gate of the switching transistor MOSFET2 and the common driving signal reserved port. The anodes of the driving diodes DG1, DG2 are connected to the common driving signal reservation port. A detection point TP1 is arranged between the cathode of the driving diode DG1 and the gate of the MOSFET1 tube, and a detection point TP2 is arranged between the cathode of the driving diode DG2 and the gate of the MOSFET2 tube; the detection point is used for accessing an external driving signal.
Furthermore, a driving resistor can be respectively arranged in the gate driving circuit of each MOSFET in the plurality of MOSFET parallel circuits to limit the magnitude of current flowing to the gate of each MOSFET when the MOSFET is switched on. As shown in fig. 2, a driving resistor RG1 is further provided between the gate of the switching transistor MOSFET1 and the driving diode DG1, and a detection TP1 is led out from between the driving resistor RG1 and the gate of the switching transistor MOSFET 1; a drive resistor RG2 is also provided between the gate of the switching transistor MOSFET2 and the drive diode DG2, and the detection TP2 is led out from between the drive resistor RG2 and the gate of the switching transistor MOSFET 2.
As shown in fig. 2, when the parallel circuit of the MOSFET tubes has a fault and the state of each MOSFET tube needs to be checked, each MOSFET tube is sequentially used as a MOSFET tube to be tested, and accordingly, the external driving signal source Vg is sequentially connected to a detection point set for the MOSFET tube to be tested, so as to test the MOSFET tube to be tested. For example, when the MOSFET1 is used as a MOSFET under test, the external driving signal source Vg is connected to the detection point TP 1. The MOSFET is a voltage-type driving device, namely, when the driving voltage reaches a certain amplitude, the MOSFET is normally switched on, otherwise, the MOSFET is not switched on. When the driving signal reaches the detection point TP1, the driving voltage amplitude at TP1 satisfies the turn-on requirement of the switching tube MOSFET1, as shown by the dashed line with arrow in fig. 2. Meanwhile, due to the unidirectional conduction characteristic of the driving diode DG1, the voltage at the detection point TP1 cannot reach the detection point TP2, and the MOSFET2 cannot be turned on. By combining the above analysis, when the switching tube MOSFET1 is turned on, the switching tube MOSFET2 cannot be turned on, which realizes the detection of the state of one MOSFET in the parallel circuit of a plurality of MOSFET tubes. When the state of the switching tube MOSFET2 needs to be detected independently, an external driving signal source Vg is connected to a detection point TP2, and the voltage requirement for completing the switching-on of the switching tube MOSFET2 is met. At this time, based on the same principle, due to the unidirectional conduction characteristic of the driving diode DG2, the voltage at the detection point TP2 cannot reach the detection point TP3, and the switching tube MOSFET1 cannot be turned on.
In another embodiment of the present invention, as shown in fig. 3, an external driving signal Vg may be connected to the common driving signal reserved port through a high impedance resistor RT1 on the basis of the circuit shown in fig. 2. Meanwhile, in order to prevent an excessively low voltage from being introduced to the grid electrode of the MOSFET to be tested through a detection point, two driving diodes DT1 and DT2 which are connected in parallel are arranged to connect the external driving signal Vg to the detection point arranged for the MOSFET to be tested, wherein the anode of the driving diode DT1 and the cathode of the driving diode DT2 are connected with the external driving signal Vg.
When the state of the switching tube MOSFET1 needs to be detected, an external driving signal Vg is connected to a driving signal reserved port through a high-impedance resistor RT1, and the cathode of the driving diode DT1 and the anode of the driving diode DT2 are connected to a reserved detection point TP 1. The driving signal Vg reaches a detection point TP1 of the MOSFET1 via a path where the driving diode DT1 is located, and the amplitude of the driving voltage at the detection point TP1 meets the turn-on requirement of the switching tube MOSFET 1. For MOSFET2, the voltage amplitude of the divided voltage on Rgs2 does not meet the turn-on requirement of switching tube MOSFET2 due to the high impedance of RT1, and MOSFET2 cannot turn on. Meanwhile, due to the unidirectional conduction characteristic of the driving diode DG1, the voltage at the detection point TP1 cannot reach the detection point TP2, and the MOSFET2 cannot be turned on. Since the external driving signal Vg is connected to the driving signal reserved port through the high-impedance resistor RT1, when the switching transistor MOSFET1 is detected, the voltage difference across the driving diode DG1 does not break down the driving diode Vg in the reverse direction.
The scheme provided by the invention starts from the drive control end of the MOSFET, and realizes drive isolation of other MOSFET tubes when detecting a single MOSFET tube in a parallel circuit of a plurality of MOSFET tubes by utilizing the one-way conduction characteristic of the diode. When the circuit with the multiple MOSFET parallel tubes works normally, the added driving diode does not influence the normal work of the MOSFET parallel connection.
Claims (5)
1. A plurality of MOSFET tube parallel circuits convenient for detection comprises a plurality of MOSFET tubes connected in parallel and a plurality of driving diodes; the method is characterized in that: a driving diode is additionally arranged between the grid electrode of each MOSFET and the reserved port of the public driving signal, and the anode of each driving diode is connected with the reserved port of the public driving signal; and a detection point is arranged between the cathode of each driving diode and the gate of the corresponding MSFET tube and is used for connecting an external driving signal.
2. The parallel circuit of claim 1, further comprising one or more drive resistors in the gate drive circuit of each MOSFET.
3. The parallel circuit of multiple MOSFET transistors according to claim 1 or 2, wherein an external driving signal source Vg is connected to a detection point set for the MOSFET transistor to be tested through a driving diode, and when the state of the MOSFET transistor to be tested is detected, the driving voltages on the gates of other MOSFET transistors do not meet the self-turn-on requirement.
4. The parallel circuit of multiple MOSFET transistors as claimed in claim 3, wherein the external driving signal Vg is coupled to the detection point for the MOSFET transistor to be tested through two parallel driving diodes, wherein the anode of one driving diode and the cathode of the other driving diode are coupled to the external driving signal Vg.
5. The parallel circuit of claim 4, wherein a bleeder resistor is provided between the gate of each MOSFET and ground; and the external driving signal Vg is also connected to the public driving signal reserved port through a high impedance resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910726566.5A CN110957896B (en) | 2019-08-07 | 2019-08-07 | A plurality of MOSFET pipe parallel circuit convenient to detect |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910726566.5A CN110957896B (en) | 2019-08-07 | 2019-08-07 | A plurality of MOSFET pipe parallel circuit convenient to detect |
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| CN110957896A true CN110957896A (en) | 2020-04-03 |
| CN110957896B CN110957896B (en) | 2022-03-29 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002222920A (en) * | 2001-01-24 | 2002-08-09 | Mitsubishi Heavy Ind Ltd | Protective device for parallel-connected mosfet |
| JP2004072811A (en) * | 2002-08-01 | 2004-03-04 | Meidensha Corp | Control circuit having mosfet parallel connection circuit |
| US20070007519A1 (en) * | 2003-09-03 | 2007-01-11 | Thomas Durbaum | Failure prediction for parallel mosfets |
| CN206506452U (en) * | 2017-03-06 | 2017-09-19 | 深圳奥特迅电力设备股份有限公司 | A kind of switching power source control circuit of wide scope input |
| CN107205295A (en) * | 2016-03-18 | 2017-09-26 | 罗姆股份有限公司 | Light-emitting component drive apparatus, light-emitting device, vehicle |
-
2019
- 2019-08-07 CN CN201910726566.5A patent/CN110957896B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002222920A (en) * | 2001-01-24 | 2002-08-09 | Mitsubishi Heavy Ind Ltd | Protective device for parallel-connected mosfet |
| JP2004072811A (en) * | 2002-08-01 | 2004-03-04 | Meidensha Corp | Control circuit having mosfet parallel connection circuit |
| US20070007519A1 (en) * | 2003-09-03 | 2007-01-11 | Thomas Durbaum | Failure prediction for parallel mosfets |
| CN107205295A (en) * | 2016-03-18 | 2017-09-26 | 罗姆股份有限公司 | Light-emitting component drive apparatus, light-emitting device, vehicle |
| CN206506452U (en) * | 2017-03-06 | 2017-09-19 | 深圳奥特迅电力设备股份有限公司 | A kind of switching power source control circuit of wide scope input |
Non-Patent Citations (1)
| Title |
|---|
| 杨兴明: "《电子设计竞赛基础与实践》", 28 February 2013, 合肥工业大学出版社 * |
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