CN110957552B - Solid medium for filter, surface metallization process thereof and dielectric filter - Google Patents
Solid medium for filter, surface metallization process thereof and dielectric filter Download PDFInfo
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- CN110957552B CN110957552B CN201911257948.4A CN201911257948A CN110957552B CN 110957552 B CN110957552 B CN 110957552B CN 201911257948 A CN201911257948 A CN 201911257948A CN 110957552 B CN110957552 B CN 110957552B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
The invention discloses a solid medium for a filter, which comprises a solid medium body and is characterized by also comprising a conductor structure arranged on the surface of the solid medium body, wherein the conductor structure at least comprises a first conductor metal layer for signal transmission and a second conductor metal layer for a surface welding layer; the first conductor metal layer is positioned on the surface of the solid medium body; the second conductor metal layer is positioned on the surface of the first conductor metal layer; the first conductor metal layer and the second conductor metal layer are conductor layers made of different metal materials. The invention also discloses a surface metallization process of the solid medium and a medium filter. The solid medium provided by the invention realizes the replacement of various metals by arranging the multilayer conductor layer structure, reduces the cost, protects the conductor layer actually used for signal transmission from being damaged, and ensures the signal transmission performance of the solid medium.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a solid medium for a filter, a surface metallization process of the solid medium and the dielectric filter.
Background
The wireless mobile communication base station is an important physical support of modern communication systems, and each base station in a communication network is required to have strong signal processing capability to ensure that signal transmission does not have distortion phenomenon in order to filter or delete specific frequency signals in the communication process. The microwave filter is used as a key device for processing the multiplied number in the base station, and the improvement of the best performance of the microwave filter determines the improvement of the communication quality and the development direction of the communication technology. At present, the miniaturization of the filter is one of the key technologies for the development of the wireless communication base station, and the high-performance and high-dielectric-constant solid medium body is a key material for realizing the miniaturization of the filter. The preparation process of the microwave dielectric resonator mainly comprises the steps of batching, granulating, molding, sintering, surface metallization, welding, testing and the like. The realization of the surface metallization of the dielectric resonator is a key technical difficulty, and the metallization of the solid dielectric body influences the Q value, reliability and other key performances of the filter.
In order to effectively reduce the transmission loss of the device and ensure the accuracy of the dielectric property test, high-conductivity metal materials are generally selected as electrode materials, such as gold, silver and the like, and the high-conductivity metal materials have strong conductivity and good oxidation resistance. Because silver has good conductivity and a price much lower than that of gold, silver is generally used as a conductor material for the current dielectric filter. However, the matching degree of the characteristics of the silver, such as the thermal expansion coefficient, the lattice constant and the like, of the microwave ceramic is not high, and the thickness of the silver is necessarily increased to enhance the adhesion of the silver on the surface of a solid medium, so that the manufacturing cost is inevitably high; on the other hand, the metal silver conductor layer is directly exposed on the outer surface of the medium and is easily worn and corroded, so that the signal transmission performance of the solid medium when used as a medium filter is influenced; in addition, different metals are adopted for replacement, and the conditions of interfacial reaction, diffusion or deformation and the like between the dielectric substrate and the electrode need to be considered, which easily cause the defects of cracking, layering and the like of the metal film layer, and reduce the performance of the device; therefore, at present, a scheme of replacing the noble metal by a plurality of metal layers is not available.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a solid medium for a filter, which realizes the replacement of various metals by arranging a multilayer conductor layer structure, reduces the cost, protects a conductor layer actually used for signal transmission from being damaged and ensures the signal transmission performance of the solid medium.
In order to achieve the above purpose, the technical scheme adopted by the invention specifically comprises the following steps:
the solid medium for the filter comprises a solid medium body and is characterized by further comprising a conductor structure arranged on the surface of the solid medium body, wherein the conductor structure at least comprises a first conductor metal layer used for signal transmission and a second conductor metal layer used for a surface welding layer; the first conductor metal layer is positioned on the surface of the solid medium body; the second conductor metal layer is positioned on the surface of the first conductor metal layer; the first conductor metal layer and the second conductor metal layer are conductor layers made of different metal materials.
In a further preferred embodiment, the thickness of the first conductor metal layer is 0.1 to 3 μm; the first conductor metal layer is made of silver or copper.
As a further preferable mode, the thickness of the second conductor metal layer is 1 to 10 μm; the second conductor metal layer is made of one of tin-copper alloy, tin-silver-copper alloy, high-temperature tin and aluminum alloy.
As a further preferable aspect, the conductor structure of the present invention further includes a third conductor metal layer, and the third conductor metal layer is located between the solid dielectric body and the first conductor metal layer.
In a further preferred embodiment, the thickness of the third conductor metal layer in the present invention is not more than 0.5 μm, and the material of the third conductor metal layer is chromium or palladium.
As a further preferable aspect, the conductor structure of the present invention further includes a fourth conductor metal layer, and the fourth conductor metal layer is located between the first conductor metal layer and the second conductor metal layer.
As a further preferable mode, the thickness of the fourth conductor metal layer according to the present invention is not more than 5 μm; the material of the fourth conductor metal layer is nickel or nickel-copper alloy.
A surface metallization process for solid media comprises
Surface treatment of the solid medium body: carrying out roughening and polishing treatment on the surface of the solid medium formed by sintering, and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface;
a step of forming a first conductor metal layer: forming a first conductor metal layer on the surface of the dried solid medium subjected to surface treatment;
a step of forming a second conductor metal layer: and forming a second conductor metal layer on the surface of the first conductor metal layer.
A surface metallization process for solid media comprises
Surface treatment of the solid medium body: carrying out roughening and polishing treatment on the surface of the solid medium formed by sintering, and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface;
a step of forming a third conductor metal layer: forming a third conductor metal layer on the surface of the dried solid medium after the surface treatment;
a step of forming a first conductor metal layer: forming a first conductor metal layer on the surface of the third conductor metal layer;
a step of forming a second conductor metal layer: and forming a second conductor metal layer on the surface of the first conductor metal layer.
As a further preferable scheme, the surface metallization process also comprises
After forming the first conductor metal layer and before forming the second conductor metal layer, a step of forming a fourth conductor metal layer: and forming a fourth conductor metal layer on the surface of the first conductor metal layer.
As a further preferred aspect, the method of forming the first, second, third, and fourth conductor metal layers according to the present invention includes: screen printing sintering method, LTCC method (printing, impregnation, coating, DIP, wall hanging, spraying and sintering method), chemical plating method, vacuum evaporation method and magnetron sputtering method.
As a further preferable scheme, the invention adopts ultrasonic waves to clean the solid medium, and ethanol and deionized water are used as the medium for alternate cleaning for 3-5 times in the cleaning process.
A dielectric filter comprising a solid medium for a filter according to the invention.
A communication base station comprises the dielectric filter.
Compared with the prior art, the invention has the beneficial effects that:
1. the solid medium for the filter is provided with at least one conductor metal layer for signal transmission and a metal conductor layer for a welding layer on the surface of the solid medium, so that the signal transmission performance of the solid medium and the weldability of the solid medium are ensured.
2. The solid medium for the filter realizes the replacement of various metals by arranging the conductor metal layer with a multilayer structure, and solves the problems of high cost, poor adhesion force and the like existing in the prior medium filter which singly adopts the metal silver layer as the conductor metal layer.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic structural diagram of a solid dielectric used for a filter according to embodiment 1 of the present invention;
FIG. 2 is a schematic structural diagram of a solid dielectric used for a filter according to embodiment 2 of the present invention;
FIG. 3 is a schematic structural diagram of a solid dielectric used for a filter according to embodiment 3 of the present invention;
FIG. 4 is a schematic structural diagram of a solid dielectric used for a filter according to embodiment 4 of the present invention;
wherein the reference symbols are: 1. a solid media body; 2. a first conductor metal layer; 3. a second conductor metal layer; 4. a third conductor metal layer; 5. a fourth conductor metal layer.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description of the embodiments, structures, features and effects according to the present invention will be given with reference to the accompanying drawings and preferred embodiments.
The method for forming the first, second, third and fourth conductor metal layers of the solid medium for the filter comprises the following steps: LTCC (printing/impregnation/coating/DIP/wall hanging/spraying and sintering), chemical plating, vacuum evaporation and magnetron sputtering. The specific process parameters are listed in table 1 below.
Table 1: method for forming metal layer
Example 1
As shown in fig. 1, in embodiment 1 of the present invention, the solid medium for a filter includes a solid medium body 1, and further includes a conductor structure disposed on a surface of the solid medium body, where the conductor structure includes at least a first conductor metal layer 2 for signal transmission and a second conductor metal layer 3 for a surface solder layer; the first conductor metal layer 2 is positioned on the surface of the solid medium body 1; the second conductor metal layer 3 is positioned on the surface of the first conductor metal layer 2; the first conductor metal layer 2 and the second conductor metal layer 3 are conductor layers made of different metal materials.
The surface metallization process of the solid medium comprises
Surface treatment of the solid medium body: because the surface of the sintered and molded solid medium can form a compact polished surface which is not beneficial to the combination of the solid medium and the metal layer, the surface of the sintered and molded solid medium needs to be subjected to roughening and polishing treatment in the step, and the roughening treatment can be carried out by adopting sand paper with the mesh number of 150-500; and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface, wherein the solid medium can be directly washed by chemical reagents (such as ethanol and deionized water) or ultrasonically cleaned by using ethanol or/and deionized water as a medium. Wherein the cleaning effect is better by adopting ethanol and deionized water as media and alternately cleaning for 3-5 times by ultrasonic waves, and the cleaning time is 5-10 minutes each time.
A step of forming a first conductor metal layer: after the solid medium subjected to the surface treatment is dried, a first conductor metal layer is formed on the surface of the solid medium by adopting a method with the number 1 in the table 1. When the solid medium is dried, drying in a high-low temperature staggered mode, wherein the high temperature is set to be 120-200 ℃, the low temperature is set to be 60-80 ℃, and the alternating times are 3-5 times; because the sintered and molded solid medium has small holes, a cleaning agent medium is remained in the small holes in the cleaning process, and the cleaned medium (ethanol and deionized water) can be fully evaporated and dried by adopting high-temperature and low-temperature staggered drying.
A step of forming a second conductor metal layer: a second conductor metal layer was formed on the surface of the first conductor metal layer by the method of number 1 in table 1.
The first conductor metal layer is used for signal transmission, and since the higher the electrical conductivity of the metal is, the better the signal transmission performance is, in order to ensure the quality of signal transmission, as a further preferable scheme, the material of the first conductor metal layer is a metal with high electrical conductivity, such as gold, silver or copper. However, silver and copper are preferred choices in combination with cost considerations, with silver being the preferred choice.
Further, in order to examine the influence of the thickness of the first conductor metal layer on the performance of the solid dielectric, the inventors tested the performance of the solid dielectric having a different thickness of the first conductor metal layer, wherein the thickness of the second conductor metal layer was set to 5 μm and the solid dielectric was a microwave ceramic dielectric. See table 2 for details.
Table 2: effect of different thickness of first conductor metal layer on solid dielectric performance
From the properties of table 2 above, it can be seen that the thickness of the first conductor metal layer has an effect on the properties of the solid medium, and the data in the table shows: when the thickness of the first conductor metal layer is between 0.1 and 3 mu m, all the performances are in a better range. Especially, when the thickness is 1.2 μm, the dielectric constant, the conductivity, the quality factor and the adhesion all show obvious changes, and when the thickness of the first conductor metal layer exceeds 3.0, the change rate of each performance parameter value tends to be flat or to have a descending trend, the change of the performance and the manufacturing cost are comprehensively considered, preferably, the thickness of the first conductor metal layer is 1.2-2.8 μm, and the best effect is 2.2 μm.
In the present invention, the second conductor metal layer is used as a solder layer, and at the same time, it can protect the material of the first conductor metal layer, and can prevent the metal of the first conductor metal layer, such as silver or copper, from being damaged or oxidized. When selecting the material, the second conductor metal layer needs to consider the adhesion between the material and the material of the first conductor metal layer in addition to the welding performance of the material. In the present invention, as a more preferable mode, the material of the second conductor metal layer is one of a tin-copper alloy, a tin-silver-copper alloy, high-temperature tin, and an aluminum alloy. Compared with simple substance metal, the alloy material has better welding performance, oxidation resistance and corrosion resistance.
Further, in order to examine the influence of the thickness of the second conductive metal layer on the performance of the solid dielectric, the inventors tested the performance of the solid dielectric having a different thickness of the second conductive metal layer, in which the thickness of the first conductive metal layer was set to 2.2 μm and the solid dielectric was a microwave ceramic dielectric. See table 3 for details.
Table 3: effect of different thickness of second conductor metal layer on solid dielectric performance
From the properties of table 3 above, it can be seen that the thickness of the second conductor metal layer has an effect on the properties of the solid medium, and the data in the table shows: when the thickness of the second conductor metal layer is between 1 and 10 mu m, all the performances are in a better range. Especially, when the thickness is 3 μm, the dielectric constant, the conductivity, the quality factor and the adhesion are obviously changed, and when the thickness of the first conductor metal layer exceeds 6 μm, the change rate of each performance parameter value tends to be flat or to have a descending trend, the change of the performance and the manufacturing cost are comprehensively considered, and preferably, the thickness of the second conductor metal layer is 3-6 μm; in consideration of the effect and cost, the thickness is preferably 5.8. mu.m.
Example 2
In embodiment 2 of the present invention, based on embodiment 1, further, the conductor structure further includes a third conductor metal layer 4, and the third conductor metal layer 4 is located between the solid dielectric body 1 and the first conductor metal layer 2. In the invention, the third conductor metal layer is used as a transition layer to cover the surface of the solid medium, and then the first conductor metal layer is formed on the surface of the third conductor metal layer by one of the methods of a screen printing sintering method, an electro-silver method, an LTCC method, a vacuum evaporation method, a magnetron sputtering method and the like. The purpose of the third conductor metal layer is to enhance the adhesion of the first conductor metal layer transmitting signals to the solid medium. The third conductor metal layer is used as a transition layer, the transition layer is connected with the solid medium and the first conductor metal layer, and the metal material of the transition layer needs to consider the matching degree with the solid medium (such as ceramic medium) material and also needs to consider the bonding strength or adhesion force between the metal material and the signal transmission layer material, so in a specific scheme, the material of the third conductor metal layer is selected to be metal palladium.
A process for the surface metallization of a solid medium, comprising
Surface treatment of the solid medium body: because the surface of the sintered and molded solid medium can form a compact polished surface which is not beneficial to the combination of the solid medium and the metal layer, the surface of the sintered and molded solid medium needs to be subjected to roughening and polishing treatment in the step, and the roughening treatment can be carried out by adopting sand paper with the mesh number of 150-500; and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface, wherein the solid medium can be directly washed by chemical reagents (such as ethanol and deionized water) or ultrasonically cleaned by using ethanol or/and deionized water as a medium. Wherein the cleaning effect is better by adopting ethanol and deionized water as media and alternately cleaning for 3-5 times by ultrasonic waves, and the cleaning time is 5-10 minutes each time.
A step of forming a third conductor metal layer: and forming a third conductor metal layer on the surface of the solid medium subjected to the surface treatment after drying by adopting a method with the number 2 in the table 1. When the solid medium is dried, drying in a high-low temperature staggered mode, wherein the high temperature is set to be 120-200 ℃, the low temperature is set to be 60-80 ℃, and the alternating times are 3-5 times; because the sintered and molded solid medium has small holes, a cleaning agent medium is remained in the small holes in the cleaning process, and the cleaned medium (ethanol and deionized water) can be fully evaporated and dried by adopting high-temperature and low-temperature staggered drying.
A step of forming a first conductor metal layer: forming a first conductor metal layer on the surface of the third conductor metal layer by using a method with a serial number of 3 in table 1;
a step of forming a second conductor metal layer: a second conductive metal layer was formed on the surface of the first conductive metal layer by the method denoted by reference numeral 1 in table 1.
Further, the inventors of the present invention examined the performance of solid dielectrics having a different thickness of the third conductive metal layer in order to examine the effect of the thickness of the third conductive metal layer on the performance of the solid dielectrics, wherein the thickness of the first conductive metal layer was set to 2.3 μm, the thickness of the second conductive metal layer was set to 5.8 μm, and the solid dielectrics were microwave ceramic dielectrics. See table 4 for details.
Table 4: effect of different thickness of third conductor metal layer on solid dielectric performance
The thickness of the third conductor metal layer is not more than 0.5 mu m. The preferred thickness is. 0.2-0.45 μm, wherein the effect is preferably 0.35. mu.m.
Example 3
In embodiment 3 of the present invention, based on embodiment 1, further, the conductor structure further includes a fourth conductor metal layer 5, and the fourth conductor metal layer 5 is located between the first conductor metal layer 2 and the second conductor metal layer 3.
A process for the surface metallization of a solid medium, comprising
Surface treatment of the solid medium body: because the surface of the sintered and molded solid medium can form a compact polished surface which is not beneficial to the combination of the solid medium and the metal layer, the surface of the sintered and molded solid medium needs to be subjected to roughening and polishing treatment in the step, and the roughening treatment can be carried out by adopting sand paper with the mesh number of 150-500; and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface, wherein the solid medium can be directly washed by chemical reagents (such as ethanol and deionized water) or ultrasonically cleaned by using ethanol or/and deionized water as a medium. Wherein the cleaning effect is better by adopting ethanol and deionized water as media and alternately cleaning for 3-5 times by ultrasonic waves, and the cleaning time is 5-10 minutes each time.
A step of forming a first conductor metal layer: after the solid medium subjected to the surface treatment is dried, a first conductor metal layer is formed on the surface of the solid medium by adopting a method with the number 1 in the table 1. When the solid medium is dried, drying in a high-low temperature staggered mode, wherein the high temperature is set to be 120-200 ℃, the low temperature is set to be 60-80 ℃, and the alternating times are 3-5 times; because the sintered and molded solid medium has small holes, a cleaning agent medium is remained in the small holes in the cleaning process, and the cleaned medium (ethanol and deionized water) can be fully evaporated and dried by adopting high-temperature and low-temperature staggered drying.
A step of forming a fourth conductor metal layer: a fourth conductor metal layer was formed on the surface of the first conductor metal layer by the method No. 5 in table 1.
A step of forming a second conductor metal layer: a second conductive metal layer was formed on the surface of the fourth conductive metal layer by the method No. 3 in table 1.
Further, the inventors of the present invention examined the performance of solid dielectrics having a different thickness of the fourth conductive metal layer in order to examine the effect of the thickness of the fourth conductive metal layer on the performance of the solid dielectrics, wherein the thickness of the first conductive metal layer was set to 2.2 μm, the thickness of the second conductive metal layer was set to 5.5, and the solid dielectrics were microwave ceramic dielectrics. See table 5 for details.
Table 5: effect of different thickness of fourth conductor metal layer on solid dielectric performance
Example 4
In embodiment 4 of the present invention, on the basis of embodiment 2, further, the conductor structure further includes a fourth conductor metal layer 5, and the fourth conductor metal layer 5 is located between the first conductor metal layer 2 and the second conductor metal layer 3.
A process for the surface metallization of a solid medium, comprising
Surface treatment of the solid medium body: because the surface of the sintered and molded solid medium can form a compact polished surface which is not beneficial to the combination of the solid medium and the metal layer, the surface of the sintered and molded solid medium needs to be subjected to roughening and polishing treatment in the step, and the roughening treatment can be carried out by adopting sand paper with the mesh number of 150-500; and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface, wherein the solid medium can be directly washed by chemical reagents (such as ethanol and deionized water) or ultrasonically cleaned by using ethanol or/and deionized water as a medium. Wherein the cleaning effect is better by adopting ethanol and deionized water as media and alternately cleaning for 3-5 times by ultrasonic waves, and the cleaning time is 5-10 minutes each time.
A step of forming a third conductor metal layer: and forming a third conductor metal layer on the surface of the solid medium subjected to the surface treatment after drying by adopting a method with the number 4 in the table 1. When the solid medium is dried, drying in a high-low temperature staggered mode, wherein the high temperature is set to be 120-200 ℃, the low temperature is set to be 60-80 ℃, and the alternating times are 3-5 times; because the sintered and molded solid medium has small holes, a cleaning agent medium is remained in the small holes in the cleaning process, and the cleaned medium (ethanol and deionized water) can be fully evaporated and dried by adopting high-temperature and low-temperature staggered drying.
A step of forming a first conductor metal layer: the first conductor metal layer was formed on the surface of the third conductor metal layer by the method No. 3 in table 1.
A step of forming a fourth conductor metal layer: a fourth conductor metal layer was formed on the surface of the first conductor metal layer by the method No. 2 in table 1.
A step of forming a second conductor metal layer: a second conductive metal layer was formed on the surface of the fourth conductive metal layer by the method No. 2 in table 1.
In addition to embodiment 3 and embodiment 4 of the present invention, as a further preferable mode, the thickness of the fourth conductor metal layer of the present invention is not more than 5 μm; the material of the fourth conductor metal layer is nickel or nickel-copper alloy.
As a further preferable scheme, the invention adopts ultrasonic waves to clean the solid medium, and ethanol and deionized water are used as the medium for alternate cleaning for 3-5 times in the cleaning process.
A dielectric filter comprising a solid medium for a filter according to the invention.
A communication base station comprises the dielectric filter.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.
Claims (12)
1. The solid medium for the filter comprises a solid medium body and is characterized by further comprising a conductor structure arranged on the surface of the solid medium body, wherein the conductor structure at least comprises a first conductor metal layer used for signal transmission and a second conductor metal layer used for a surface welding layer; the first conductor metal layer is positioned on the surface of the solid medium body; the second conductor metal layer is positioned on the surface of the first conductor metal layer; the first conductor metal layer and the second conductor metal layer are conductor layers made of different metal materials; the conductor structure further comprises a fourth conductor metal layer located between the first conductor metal layer and the second conductor metal layer; the first conductor metal layer is made of gold or silver, and the thickness of the first conductor metal layer is 0.1-3 mu m; the second conductor metal layer is made of one of tin-copper alloy, tin-silver-copper alloy, high-temperature tin and aluminum alloy.
2. The solid medium for a filter of claim 1, wherein the thickness of the second conductor metal layer is 1-10 μm.
3. A solid medium for a filter as claimed in claim 1 or 2, wherein the conductor structure further comprises a third conductor metal layer, the third conductor metal layer being located between the solid medium body and the first conductor metal layer.
4. The solid medium for a filter according to claim 3, wherein the thickness of the third conductor metal layer is not more than 0.5 μm, and the material of the third conductor metal layer is chromium or palladium.
5. The solid medium for a filter according to claim 1, wherein the thickness of the fourth conductor metal layer is not more than 5 μm; the material of the fourth conductor metal layer is nickel or nickel-copper alloy.
6. A process for metallizing a surface of a solid medium according to claim 1, comprising a step of bulk surface treatment of the solid medium: carrying out roughening and polishing treatment on the surface of the solid medium formed by sintering, and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface;
a step of forming a first conductor metal layer: forming a first conductor metal layer on the surface of the dried solid medium subjected to surface treatment;
a step of forming a second conductor metal layer: and forming a second conductor metal layer on the surface of the first conductor metal layer.
7. A process for metallizing a surface of a solid medium according to claim 1, comprising a step of bulk surface treatment of the solid medium: carrying out roughening and polishing treatment on the surface of the solid medium formed by sintering, and then cleaning the solid medium with the roughened surface to remove impurities and chemical substances on the surface;
a step of forming a third conductor metal layer: forming a third conductor metal layer on the surface of the dried solid medium after the surface treatment;
a step of forming a first conductor metal layer: forming a first conductor metal layer on the surface of the third conductor metal layer;
a step of forming a second conductor metal layer: and forming a second conductor metal layer on the surface of the first conductor metal layer.
8. The surface metallization process of claim 6 or 7, further comprising
After forming the first conductor metal layer and before forming the second conductor metal layer, a step of forming a fourth conductor metal layer: and forming a fourth conductor metal layer on the surface of the first conductor metal layer.
9. The surface metallization process of claim 8, wherein the first, second, third, and fourth conductor metal layers are formed by one of screen printing, sintering, LTCC, electroless plating, vacuum evaporation, and magnetron sputtering.
10. The surface metallization process of claim 8, wherein the solid medium is cleaned by ultrasonic waves, and the cleaning process is performed 3-5 times by using ethanol and deionized water as media.
11. A dielectric filter comprising a solid medium according to any one of claims 1 to 5.
12. A communication base station comprising a dielectric filter according to claim 11.
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| PCT/CN2020/125240 WO2021114945A1 (en) | 2019-12-10 | 2020-10-30 | Solid dielectric for filter and surface metallization process therefor, and dielectric filter |
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| CN112647050A (en) * | 2020-09-24 | 2021-04-13 | 深圳市宝元金实业有限公司 | PVD (physical vapor deposition) nano magnetron sputtering silver plating metallization process of ceramic dielectric filter |
| CN113025982A (en) * | 2021-03-01 | 2021-06-25 | 森科五金(深圳)有限公司 | Thin film layer for surface of 5G filter and preparation method thereof |
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| EP3137649B1 (en) * | 2014-04-28 | 2024-02-21 | Cuptronic Technology Ltd. | Metalization of surfaces |
| CN110957552B (en) * | 2019-12-10 | 2022-01-11 | 深圳顺络电子股份有限公司 | Solid medium for filter, surface metallization process thereof and dielectric filter |
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2019
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| CN106747675A (en) * | 2016-11-29 | 2017-05-31 | 浙江大学 | A kind of method of microwave-medium ceramics surface metalation |
| CN107022747A (en) * | 2017-04-05 | 2017-08-08 | 武汉光谷创元电子有限公司 | Microwave-medium part and its manufacture method |
| CN106958009A (en) * | 2017-05-08 | 2017-07-18 | 昆山昊盛泰纳米科技有限公司 | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof |
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