CN110957373A - Nanoscale rectifier based on transition metal disulfide side heterojunction - Google Patents
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- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 25
- -1 transition metal disulfide Chemical class 0.000 title claims abstract description 24
- 239000002356 single layer Substances 0.000 claims abstract description 32
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 19
- NGTSQWJVGHUNSS-UHFFFAOYSA-N bis(sulfanylidene)vanadium Chemical compound S=[V]=S NGTSQWJVGHUNSS-UHFFFAOYSA-N 0.000 claims abstract description 17
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 6
- 229910052961 molybdenite Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- KCBJDDCXBCEDRU-UHFFFAOYSA-N 3,4-dihydro-2h-borole Chemical compound C1CB=CC1 KCBJDDCXBCEDRU-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 206010034962 Photopsia Diseases 0.000 description 1
- JKWKWZFAXUEKNN-UHFFFAOYSA-N [SiH2]=[B] Chemical compound [SiH2]=[B] JKWKWZFAXUEKNN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000065 phosphene Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004613 tight binding model Methods 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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Abstract
The invention discloses a nanoscale rectifier based on a transition metal disulfide side heterojunction, and belongs to the technical field of nanoscale electronic devices. The technical scheme provided by the invention has the key points that: a nanoscale rectifier based on a transition metal disulfide side heterojunction is characterized in that a side heterojunction structure is formed by vanadium disulfide with a 1T-phase structure and molybdenum disulfide with a 2H-phase single layer, a drain electrode is applied to a 1T-phase vanadium disulfide single layer region, a source electrode is applied to a 2H-phase molybdenum disulfide single layer region to form a diode structure, when limited bias voltage is applied, forward voltage can be conducted when the forward voltage exceeds a 0.4V threshold value, reverse voltage is always kept in a non-conducting state, and an excellent good display effect is achievedRectification property, rectification ratio is as high as 107The rectifier diode has the advantages of ultra-thin structure, thickness less than 4 angstroms, flexible adjustment and customization of size according to actual needs, and low power consumption. The invention has the advantages of ultrathin structure, adjustable size, extremely high rectification ratio and low power consumption.
Description
Technical Field
The invention belongs to the technical field of nanoscale electronic devices, and particularly relates to a nanoscale rectifier based on a transition metal disulfide side heterojunction.
Background
The trend in electronics toward miniaturization, even closer and closer to molecular or atomic dimensions, is toward faster (i.e., faster reaction rates), cooler (i.e., lower power consumption, less heat generation), and smaller (i.e., smaller structural dimensions). The development of nanoscale electronic devices has attracted considerable interest worldwide.
In recent years, two-dimensional layered materials have attracted extensive research interest of scientists in many fields such as physics, chemistry and materials due to their novel geometric and electronic structure, mechanics and photoelectricity. For example, graphene, silylene, boron nitride, transition metal disulfides, mxene, phosphene, stannene, germene, and borolene have been prepared in succession. Research finds that a plurality of two-dimensional materials have excellent properties of force, heat, light, electricity, magnetism and the like, are expected to become key materials of a new generation of high-performance nanometer devices, and open up a brand new research and application field.
Transition metal disulfide monolayer hostThree phase structures exist, namely 1T, 2H, 1T' phase [ see for details: T.Heine, Transition Metal Charcogenes, Ultrathin Inorganic Materials with tunable electronic Properties [ J ]],Acc.Chem.Res.48,65-72(2015)]. Different phases of the isomeric transition metal disulfides will exhibit completely different electronic properties, for example, a 1T phase of vanadium disulfide monolayers will exhibit metallic properties and a 2H phase of molybdenum disulfide will exhibit semiconducting properties. Different types of transition metal disulfides can constitute lateral heterojunctions or van der waals layered heterojunctions [ for example: zhang, et, EpitaxialGrowhof two-dimensional-Semiconductor transformation-Metal Dichalcogenide Vertical stacks (VSe)2/MX2)and Their Band Alignments[J],ACSNano 13,885-893(2019)]And in turn may exhibit some novel properties.
Disclosure of Invention
The invention provides a nanoscale rectifier based on a transition metal disulfide side heterojunction. Vanadium disulfide (1T-VS) with 1T phase structure is designed2) Molybdenum disulfide (2H-MoS) with single-layer and 2H-phase structure2) The single layer is combined into a single-layer side face heterojunction structure, and when a Drain (Drain) power supply and a Source (Source) power supply are respectively added to two ends of the heterojunction, a Schottky diode structure is formed, and the rectification function is shown.
The invention adopts the following technical scheme for solving the technical problems, and the nanoscale rectifier based on the transition metal disulfide side heterojunction is characterized in that the nanoscale rectifier is formed by a single-layer side heterojunction consisting of a vanadium disulfide single layer with a 1T-phase structure and a molybdenum disulfide single layer with a 2H-phase structure and having metal characteristics.
Further preferably, the transition metal disulfide side heterojunction rectifier is in a contact structure as shown in fig. 1, namely, a vanadium disulfide monolayer of a 1T phase structure and molybdenum disulfide of a 2H phase structure are in contact coupling along the zigzag direction of the two layers.
Preferably, the transition metal disulfide side heterojunction rectifier is composed of a two-dimensional 1T-phase vanadium disulfide and 2H-phase molybdenum disulfide single layer, the drain electrode is applied to one side of the 1T-phase vanadium disulfide, and the source electrode is applied to one side of the 2H-phase molybdenum disulfide.
The invention designs a nanoscale rectifier based on a transition metal disulfide side heterojunction, which can realize the unidirectional conduction rectification effect of a circuit and can be used as a candidate material of the nanoscale rectifier. The invention has the advantages of ultrathin structure, adjustable size, extremely high rectification ratio and low power consumption.
Drawings
Fig. 1 is an atomic scale schematic of a transition metal disulfide side heterojunction nanoscale rectifier, where fig. 1(a) is a top view of the rectifier, with a 1T phase vanadium disulfide region on the left, and a Drain (Drain) applied to this portion; on the right is the 2H phase molybdenum disulfide moiety to which the Source (Source) is applied. Fig. 1(b) is a side view of the rectifier.
Fig. 2 is a current-voltage curve (current) and a rectification ratio curve (rectification) of the rectifier.
Detailed Description
The present invention is described in further detail below with reference to examples, but it should not be construed that the scope of the above subject matter of the present invention is limited to the following examples, and that all the technologies realized based on the above subject matter of the present invention belong to the scope of the present invention.
Examples
The invention constructs vanadium disulfide (1T-VS) with a 1T phase structure2) Molybdenum disulfide (2H-MoS) with single-layer and 2H-phase structure2) Single layer combined into a single layer side heterojunction (1T-VS)2/2H-MoS2) And (5) structure. By using the industrially advanced Quantum ATK device tool [ 2 ]
Smidstrup,et al.,QuantumATK:an integrated platform ofelectronic and atomic-scale modelling tools[J].J.Phys.:Condens.Matter 32,015901(2020)]The electron transport property of the side heterojunction is researched by combining a density functional with an unbalanced Green function technology. By measuring its electrical properties, e.g. current-voltage curveShow the 1T-VS2/2H-MoS2The rectifying effect of the side heterojunction provides a relevant theoretical basis and a model construction scheme for further designing and realizing a single-layer rectifier based on the transition metal disulfide with excellent performance.
Based on 1T-VS2/2H-MoS2The side heterojunction rectifier is composed of a 1T-phase vanadium disulfide monolayer and a 2H-phase molybdenum disulfide monolayer, as well as left and right drain electrodes and a source electrode, as shown in fig. 1. Wherein fig. 1(a) is a top view and fig. 1(b) is a side view of the nanoscale current limiter.
The measurement of the electrical properties and the implementation of the rectification characteristics of the nanoscale rectifier can be completed according to the following steps:
firstly, as shown in fig. 1, a two-dimensional 1T-phase vanadium disulfide monolayer and a 2H-phase molybdenum disulfide monolayer are coupled and contacted along the zigzag direction of the two-dimensional 1T-phase vanadium disulfide monolayer and the 2H-phase molybdenum disulfide monolayer to form a single-layer side heterojunction structure.
Secondly, carrying out structure relaxation on the lateral heterojunction to achieve the condition that the stress between atoms is smaller than
So far, an optimized stable heterojunction structure is recalled.
And thirdly, applying a drain power supply in a 1T-phase vanadium disulfide single-layer region of the heterojunction, applying a source power supply in a 2H-phase molybdenum disulfide single-layer region, wherein the size of a diode formed by the heterojunction in a direction perpendicular to the transport direction (namely the x axial direction) is adjustable, and manufacturing rectifiers with different sizes according to actual needs.
And applying a finite bias voltage, e.g., from-0.8 volts to 0.8 volts, to the drain and source, the current-voltage curve relationship across the lateral heterojunction is measured by the Landauer-B ü ttiker method
Wherein, T (E, V)b) Representing the electron transmission coefficient, f, in relation to the bias voltageD/SFermi Dirac distribution function, μ, representing the drain and sourceD/SDenotes drain and sourceThe chemical potential of the poles.
The current-voltage curve measurement of the side heterojunction rectifier is shown as the current curve in fig. 2, which shows excellent rectification. When the forward voltage exceeds the 0.4 volt threshold voltage, the circuit begins to conduct and the current gradually increases. And when reverse voltage is applied, the circuit is always in a non-conducting state. By calculating the rectification ratio (i.e. the absolute value of the ratio of the current at the forward voltage to the current at the reverse voltage), it was found that the rectification ratio was as high as 107Of the order of magnitude (as shown by the Rectification Ratio curve in fig. 2), i.e., the lateral heterojunction exhibits excellent rectifying action.
The transition metal disulfide side heterojunction rectifier designed by the inventor has the characteristics of ultrathin structure, adjustable size, low power consumption and excellent performance. The size of the material can be freely customized according to the needs. As shown in FIG. 1, the thickness of the transition metal disulfide side heterojunction rectifier is less than 4 angstroms, and the dimension in the x direction can be freely customized and regulated according to actual needs. The transition metal disulfide side heterojunction rectifier has extremely high rectification ratio, outstanding performance and low power consumption, and can realize current conduction in the forward voltage direction at the threshold voltage of 0.4 volt.
The basic shape configuration, technical solution, basic principle, main features and advantages of the present invention have been described above. As will be appreciated by those skilled in the art. The invention falls into the protection scope of the invention when the lateral heterojunction composed of 1T phase and 2H phase transition metal disulfide is adopted.
Claims (4)
1. A nanoscale rectifier based on a transition metal disulfide side heterojunction, characterized in that: the nanoscale rectifier is composed of a single-layer side heterojunction which is composed of a vanadium disulfide single layer with a 1T phase structure and a molybdenum disulfide single layer with a 2H phase structure and has a metal characteristic.
2. The transition metal disulfide side heterojunction-based nanoscale rectifier of claim 1, wherein: the vanadium disulfide monolayer of the 1T phase structure and the molybdenum disulfide monolayer of the 2H phase structure are coupled into a side heterojunction structure along the zigzag direction of the two monolayers.
3. The transition metal disulfide side heterojunction-based nanoscale rectifier of claim 2, wherein: a drain electrode power supply is applied to a vanadium disulfide single-layer region of a 1T phase structure with metal characteristics, and a source electrode is applied to a molybdenum disulfide single-layer region of a 2H phase structure with semiconductor characteristics to form a diode structure, and the diode structure has excellent rectification effect under limited bias voltage.
4. The transition metal disulfide side heterojunction-based nanoscale rectifier of claim 3, wherein: the finite bias is-0.8 to 0.8 volts.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112002766A (en) * | 2020-08-28 | 2020-11-27 | 河南师范大学 | Based on MnBi2Te4Single-layer nanoscale PN junction diode rectifier |
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| US20150034907A1 (en) * | 2013-08-02 | 2015-02-05 | Northwestern University | Gate-tunable p-n heterojunction diode, and fabrication method and application of same |
| US20160284811A1 (en) * | 2013-11-04 | 2016-09-29 | Massachusetts Institute Of Technology | Electronics including graphene-based hybrid structures |
| US20180158934A1 (en) * | 2016-11-21 | 2018-06-07 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers |
| CN110199395A (en) * | 2016-11-16 | 2019-09-03 | 阿卜杜拉国王科技大学 | Lateral hetero-junctions between the second layer of two chalcogenide of first layer and transition metal |
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Patent Citations (4)
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|---|---|---|---|---|
| US20150034907A1 (en) * | 2013-08-02 | 2015-02-05 | Northwestern University | Gate-tunable p-n heterojunction diode, and fabrication method and application of same |
| US20160284811A1 (en) * | 2013-11-04 | 2016-09-29 | Massachusetts Institute Of Technology | Electronics including graphene-based hybrid structures |
| CN110199395A (en) * | 2016-11-16 | 2019-09-03 | 阿卜杜拉国王科技大学 | Lateral hetero-junctions between the second layer of two chalcogenide of first layer and transition metal |
| US20180158934A1 (en) * | 2016-11-21 | 2018-06-07 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers |
Non-Patent Citations (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002766A (en) * | 2020-08-28 | 2020-11-27 | 河南师范大学 | Based on MnBi2Te4Single-layer nanoscale PN junction diode rectifier |
| CN112002766B (en) * | 2020-08-28 | 2023-07-25 | 河南师范大学 | MnBi-based alloy 2 Te 4 Single-layer nano-scale PN junction diode rectifier |
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