CN110957311A - Quantum dot light-emitting device - Google Patents

Quantum dot light-emitting device Download PDF

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Publication number
CN110957311A
CN110957311A CN201911243996.8A CN201911243996A CN110957311A CN 110957311 A CN110957311 A CN 110957311A CN 201911243996 A CN201911243996 A CN 201911243996A CN 110957311 A CN110957311 A CN 110957311A
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CN
China
Prior art keywords
quantum dot
unit
light
emitting device
layer
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Withdrawn
Application number
CN201911243996.8A
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Chinese (zh)
Inventor
刘雅俊
刘玉婧
林佳丽
韩璐
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Tianjin Zhuoda Technology Development Co ltd
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Tianjin Zhuoda Technology Development Co ltd
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Priority to CN201911243996.8A priority Critical patent/CN110957311A/en
Publication of CN110957311A publication Critical patent/CN110957311A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01GHORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G7/00Botany in general
    • A01G7/04Electric or magnetic or acoustic treatment of plants for promoting growth
    • A01G7/045Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/508Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14Measures for saving energy, e.g. in green houses

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Botany (AREA)
  • Ecology (AREA)
  • Forests & Forestry (AREA)
  • Environmental Sciences (AREA)
  • Led Device Packages (AREA)

Abstract

The invention relates to a quantum dot light-emitting device which comprises a substrate, an LED chip, a quantum dot layer and a packaging layer. A plurality of independent LED chips are arranged on the substrate, and each LED chip is an ultraviolet LED chip; the quantum dot layer comprises mutually independent red, orange, yellow, green, cyan, blue and purple quantum dot units, and the quantum dot units of all colors are arranged on the LED chips in a one-to-one correspondence manner; the packaging layer is arranged on the substrate and the quantum dot layer and covers the quantum dot units and the LED chips. The quantum dot light-emitting device can excite the red, orange, green, cyan and purple quantum dots to emit seven colors of light through the ultraviolet LED chip, and the seven colors of light are mixed to obtain a spectrum main body with the spectrum coverage range of 400 nm-700 nm, so that the full-spectrum coverage of visible light required by plants can be realized; meanwhile, the LED chips are mutually independent and can be independently controlled, and then seven monochromatic lights of red, orange, yellow, green, blue and purple can be emitted and provided.

Description

Quantum dot light-emitting device
Technical Field
The invention relates to the technical field of semiconductors, in particular to a quantum dot light-emitting device.
Background
An LED (Light Emitting Diode) is a solid semiconductor device, has the advantages of high brightness, low operating voltage, low power consumption, easy matching with an integrated circuit, simple driving, long service life, and the like, and has been widely used as a Light source in the field of lighting.
For example, in the process of plant growth and development, the LED light source can provide illumination, so that the problems that due to factors such as weather and seasons, the illumination is insufficient, normal photosynthesis can not be carried out, organic matters can not be stored, the growth and development can not be carried out normally, and even direct withering and death can be avoided. It is well known that the spectral range favorable for plant growth is 400nm to 700 nm. The plant illumination lamps in the market at present mostly adopt LED lamps as light sources, and only two types of blue light LEDs and red light LEDs are provided due to the limitation of luminescent materials of the LED lamps, but the optimal growing environment cannot be provided for plants, and the requirement of the plants on light in the growing process cannot be met.
Disclosure of Invention
In view of this, it is necessary to provide a quantum dot light-emitting device having a wide spectral range.
A quantum dot light-emitting device, comprising:
a substrate;
the plurality of independent LED chips are arranged on the substrate, and each LED chip is an ultraviolet LED chip;
the quantum dot layer comprises a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit and a purple quantum dot unit which are mutually independent, and the quantum dot units of all colors are arranged on the LED chips in a one-to-one correspondence mode; and
and the packaging layer is arranged on the substrate and the quantum dot layer and covers the quantum dot units and the LED chips.
According to the quantum dot light-emitting device, the quantum dots with seven colors of red, orange, yellow, green, blue and purple are excited by the ultraviolet LED chip to emit light with seven colors, and a spectrum main body with a spectrum coverage range of 400-700 nm can be obtained by mixing the seven colors of light, so that full-spectrum coverage of visible light required by plants can be realized; meanwhile, the LED chips are mutually independent and can be independently controlled, and then seven monochromatic lights of red, orange, yellow, green, blue and purple can be emitted and provided.
Above-mentioned quantum dot light emitting device can regard as lighting device, wide application in vegetation illumination, the shortcoming that traditional LED light source full spectrum covers inadequately has been overcome, make the plant break away from the limitation that can only rely on solar energy to normally grow, the combination of this kind of multiple color, not only can satisfy the demand of different stages in the middle of the vegetation process, and can satisfy the different demands of multiple plant simultaneously, thereby can improve crop output, shorten vegetation cycle, produce high-quality high-quantity crop, and can be better be applied to indoor light filling, greenhouse light filling and full artificial light plant factory illumination etc..
In one embodiment, any two of the LED chips are connected in parallel, and each of the LED chips can be independently controlled.
In one embodiment, in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit and a purple quantum dot unit form a structural unit, and the quantum dot units in the structural unit are distributed in the same row.
In one embodiment, the quantum dot layer contains a plurality of the structural units, and the structural units are distributed at intervals in different rows.
In one embodiment, in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit and a purple quantum dot unit form a structural unit, and each quantum dot unit in the structural unit is annularly distributed on the substrate.
In one embodiment, the quantum dot layer contains a plurality of the structural units, and the structural units are arranged in concentric rings.
In one embodiment, each quantum dot unit in one of the structural units is located between two adjacent quantum dot units in the structural units of adjacent rings in the longitudinal direction of the rings.
In one embodiment, the encapsulation layer is an acrylic resin layer, an epoxy resin layer or a silicone resin layer; and/or
The substrate is an EMC substrate, a PCT substrate and Al2O3A ceramic substrate or an AlN ceramic substrate.
In one embodiment, the quantum dot light emitting device is a lighting device.
In one embodiment, the quantum dot light-emitting device further includes a reflective lamp cover, which is disposed on the substrate and accommodates the LED chip, the quantum dot layer, and the encapsulation layer.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light-emitting device according to an embodiment;
FIG. 2 is a schematic top view of the quantum dot light-emitting device shown in FIG. 1 without the quantum dot layer and the encapsulation layer;
fig. 3 is a schematic view illustrating a distribution of quantum dot layers of the quantum dot light-emitting device shown in fig. 1;
FIG. 4 is a schematic diagram of a distribution of another embodiment of a quantum dot layer of a quantum dot light emitting device;
fig. 5 is a schematic structural diagram of a quantum dot light-emitting device according to yet another embodiment;
FIG. 6 is a schematic top view of the quantum dot light-emitting device shown in FIG. 5 without the quantum dot layer and the encapsulation layer;
fig. 7 is a schematic view showing a distribution of quantum dot layers in the quantum dot light-emitting device shown in fig. 5.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, an embodiment of the invention provides a quantum dot light-emitting device 100. The quantum dot light emitting device 100 includes a substrate 11, a plurality of independent LED chips 12, a quantum dot layer 13, and an encapsulation layer 14.
Referring to fig. 2, a plurality of independent LED chips 12 are independently disposed on a substrate 11. Each LED chip 12 is an ultraviolet LED chip;
referring to fig. 3, the quantum dot layer 13 includes a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit, and a violet quantum dot unit, which are independent of each other. The quantum dot units of each color are arranged on each LED chip 12 in a one-to-one correspondence.
The encapsulating layer 14 is provided on the substrate 11 and the quantum dot layer 13 and covers each quantum dot unit and each LED chip 12.
The quantum dot light-emitting device 100 can excite the red, orange, yellow, green, blue, purple quantum dots to emit seven colors of light through the ultraviolet LED chip 12, and the seven colors of light are mixed to obtain a spectrum main body with a spectrum coverage range of 400nm to 700nm, so that the full spectrum coverage of visible light required by plants can be realized; meanwhile, the LED chips 12 are independent of each other and can be controlled independently, and then seven monochromatic lights of red, orange, yellow, green, blue and purple can be emitted and provided.
Above-mentioned quantum dot light emitting device 100 can regard as lighting device, wide application in vegetation illumination, the shortcoming that traditional LED light source full spectrum covers inadequately has been overcome, make the plant break away from the limitation that can only rely on solar energy to normally grow, the combination of this kind of multiple color, not only can satisfy the demand of different stages in the middle of the vegetation process, and can satisfy the different demands of multiple plant simultaneously, thereby can improve crop output, shorten vegetation cycle, produce high-quality high-quantity crop, and can be better be applied to indoor light filling, greenhouse light filling and full artificial light plant factory illumination etc..
In some embodiments, any two LED chips 12 are connected in parallel, and each LED chip 12 can be controlled independently. It will be appreciated that a control circuit is also included, with the control circuit being connected to each LED chip 12. Because each LED chip 12 can be controlled independently, one or more of the LED chips 12 can be controlled to work together, so as to achieve different lighting effects. Specifically, the LED chip 12 corresponding to the blue quantum dot unit is individually controlled, for example, at the early stage of plant growth, so that the quantum dot light-emitting device 100 emits blue light to help the plant grow stem and leaf. In the flowering and fruiting periods of the plant, the LED chips 12 corresponding to the orange and red quantum dot units are simultaneously controlled, so that the quantum dot light-emitting device 100 emits orange light and red light to help the plant to flower and fruit. In other stages of plant growth, the seven colors of light can be turned on completely, so that high-quality white light can be obtained, sufficient light is provided for plants, and plant growth is promoted.
Further, the ultraviolet LED chip 12 may be of a face-up structure, a vertical structure, or a flip-chip structure.
It is understood that the encapsulation layer 14 independently isolates the individual LED chips 12 and the individual quantum dot units from the package. In some of these embodiments, the encapsulation layer 14 is an acrylic resin layer, an epoxy resin layer, or a silicone resin layer.
In some embodiments, the substrate 11 is an EMC (epoxy molding compound) substrate, a PCT (poly (cyclohexylene dimethylene terephthalate) substrate, Al2O3A ceramic substrate or an AlN ceramic substrate. Understandably, of the substrate 11The material is not limited thereto.
It can be understood that the quantum dot unit contains silica gel in addition to the quantum dots of the corresponding colors. The quantum dots and the silica gel are uniformly mixed and then disposed on the outer surface of the LED chip 12 by coating or the like.
In some embodiments, in the quantum dot layer 13, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit, and a violet quantum dot unit form a structural unit 131, and the quantum dot units in the structural unit 131 are distributed in the same row. It can be understood that the color arrangement order of the quantum dot units in the same structural unit 131 is not limited.
In this particular example, the shape of the quantum dot unit is rectangular, and in other examples, the shape of the quantum dot unit is not limited thereto, and may also be circular, triangular, pentagonal, hexagonal, and so on.
In the present specific example, only one structural unit 131 is contained in the quantum dot layer 13.
It is understood that in other examples, as shown in fig. 4, a plurality of structural units 131 may be contained in the quantum dot layer 13. Further, the plurality of structural units 131 are spaced in different rows. Thus, quantum dot units arranged in multiple rows and multiple columns are formed.
Referring to fig. 5, a quantum dot light emitting device 200 in another embodiment includes a substrate 21, a plurality of independent LED chips 22, a quantum dot layer 23, and an encapsulation layer 24, and has a structure substantially the same as that of the quantum dot light emitting device 100 in the previous embodiment, except that: as shown in fig. 6, the LED chips 22 in the structural unit are also distributed on the substrate 21 in a ring shape. Accordingly, as shown in fig. 7, in the quantum dot layer 23, each quantum dot unit in the structural units is distributed on the substrate 21 in a ring shape.
In the present specific example of fig. 5, the quantum dot layer 23 contains only one structural unit.
It is understood that in other examples, the quantum dot layer 23 may contain a plurality of structural units therein. Further, a plurality of structural units are arranged in concentric rings.
Further, each quantum dot unit in one of the structural units is located between two adjacent quantum dot units in the structural units of adjacent rings in the longitudinal direction of the rings. In other words, the quantum dot units of two adjacent structural units are staggered in the longitudinal direction of the ring. Specifically, for example, if the innermost layer is the first layer, the quantum dot units of the second layer from inside to outside are interspersed between two adjacent quantum dot units of the first layer.
In the present specific example, the quantum dot light-emitting device 200 is a lighting device, specifically a plant lighting device.
With continued reference to fig. 5, further, the quantum dot light emitting device 200 further includes a light reflecting lamp cover 25. The reflector 25 covers the substrate 21 and houses the LED chip 22, the quantum dot layer 23, and the encapsulation layer 24. Therefore, the light emitted from the quantum dot layer 23 can be reflected, and the intensity and the utilization rate of the light are improved.
More specifically, reflection of light lamp shade 25 is the metal lamp shade, and reflection of light lamp shade 25's inside is the mirror surface, can reflect the light of shooting to the edge back for can make more light shine on the plant when plant illumination is grown, improve the utilization ratio of light.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A quantum dot light-emitting device, comprising:
a substrate;
the plurality of independent LED chips are arranged on the substrate, and each LED chip is an ultraviolet LED chip;
the quantum dot layer comprises a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit and a purple quantum dot unit which are mutually independent, and the quantum dot units of all colors are arranged on the LED chips in a one-to-one correspondence mode; and
and the packaging layer is arranged on the substrate and the quantum dot layer and covers the quantum dot units and the LED chips.
2. The quantum dot light-emitting device according to claim 1, wherein any two of the LED chips are connected in parallel, and each of the LED chips can be independently controlled.
3. The quantum dot light-emitting device according to claim 1, wherein in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit, and a violet quantum dot unit constitute a structural unit, and the quantum dot units in the structural unit are distributed in the same row.
4. The qd-led apparatus of claim 3, wherein the qd layer comprises a plurality of the structural units, and the structural units are distributed at intervals in different rows.
5. The quantum dot light-emitting device according to claim 1, wherein in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, a blue quantum dot unit, and a violet quantum dot unit constitute a structural unit, and the quantum dot units in the structural unit are annularly distributed on the substrate.
6. A quantum dot light-emitting device according to claim 5, wherein the quantum dot layer contains a plurality of the structural units, and the structural units are arranged in concentric rings.
7. The quantum dot light-emitting device according to claim 6, wherein each quantum dot unit in one of the structural units is located between two adjacent quantum dot units in the structural units of adjacent rings in a longitudinal direction of the rings.
8. The quantum dot light-emitting device according to any one of claims 1 to 7, wherein the encapsulation layer is an acrylic resin layer, an epoxy resin layer, or a silicone resin layer; and/or
The substrate is an EMC substrate, a PCT substrate and Al2O3A ceramic substrate or an AlN ceramic substrate.
9. The quantum dot light-emitting device according to any one of claims 1 to 7, wherein the quantum dot light-emitting device is a lighting device.
10. The quantum dot light-emitting device according to claim 9, further comprising a reflective lamp cover disposed on the substrate and housing the LED chip, the quantum dot layer, and the encapsulation layer.
CN201911243996.8A 2019-12-06 2019-12-06 Quantum dot light-emitting device Withdrawn CN110957311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911243996.8A CN110957311A (en) 2019-12-06 2019-12-06 Quantum dot light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911243996.8A CN110957311A (en) 2019-12-06 2019-12-06 Quantum dot light-emitting device

Publications (1)

Publication Number Publication Date
CN110957311A true CN110957311A (en) 2020-04-03

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Country Status (1)

Country Link
CN (1) CN110957311A (en)

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