CN110957294B - Connecting structure of thin film sensor and processing method thereof - Google Patents
Connecting structure of thin film sensor and processing method thereof Download PDFInfo
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- CN110957294B CN110957294B CN201911263633.0A CN201911263633A CN110957294B CN 110957294 B CN110957294 B CN 110957294B CN 201911263633 A CN201911263633 A CN 201911263633A CN 110957294 B CN110957294 B CN 110957294B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
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- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H—ELECTRICITY
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- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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- H—ELECTRICITY
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- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R2201/00—Connectors or connections adapted for particular applications
- H01R2201/20—Connectors or connections adapted for particular applications for testing or measuring purposes
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Abstract
The invention relates to a connecting structure of a film sensor and a processing method thereof, wherein the connecting structure of the film sensor comprises a substrate, the film sensor, a high-temperature-resistant film lead, a platinum wire and a welding spot, the film sensor is arranged on a first surface of the substrate, one end of the high-temperature-resistant film lead is connected with the film sensor, and the other end of the high-temperature-resistant film lead extends outwards; one side of the welding spot with the groove is connected with the second surface of the base body through a bonding agent, the platinum wire is embedded in the groove of the welding spot, one end of the platinum wire is connected with the extending end of the high-temperature-resistant film lead through the bonding agent, and the other end of the platinum wire extends outwards. The invention solves the problem of leading out the electric signal of the film sensor, and can realize the lead interconnection and signal transmission between the film device and the outside under the high-temperature severe environment on the basis of not changing the surface appearance and not damaging the surface structure.
Description
Technical Field
The invention relates to a signal leading-out mode in a high-temperature environment, in particular to a connecting structure of a film sensor and a processing method thereof.
Background
With the development of the aviation power technology, the temperature and the rotating speed of the engine are continuously improved, so that the service life of the turbine blade of the engine is directly influenced. The thin film sensor is arranged on the surface of the blade, so that relevant parameters are obtained in time to adjust the working state of the engine, the performance of the engine is improved, and the turbine blade is ensured to play an important role in the aspect of reliability of continuous working under extreme environments such as high temperature, high pressure, high rotating speed and the like.
At present, the maximum bearable temperature of the film sensor applied to the turbine blade exceeds 1000 ℃, in order to effectively acquire the sensor signal, the pin of the sensor needs to be extended to the blade root, and a welding spot is manufactured to connect the tail end of the film lead and the external signal wire. The traditional method for extending the pins of the sensor mainly comprises the steps of depositing the same materials of a sensitive layer in situ, enlarging the sensitive range of the sensor, improving the uncertainty of measurement and being difficult to realize fixed-point measurement; the manufacturing method of the welding spot mainly coats high-temperature conductive slurry, such as high-temperature silver slurry, platinum slurry and the like, on the surface, the bearable temperature range is limited, the node size is large, and the adhesive force is small; the mode of directly burying the lead wire in the blade and forming contact with the sensor pin has better reliability, but destroys the integrity of the surface of the turbine blade and is difficult to be applied in practice.
Patent application CN108534925A discloses a piezoresistive film-based method for measuring the pressure of the installation interface of a cable intermediate connector, comprising the following steps: (1) selecting a plurality of sections on the cable middle joint structure, and selecting a placement point of a piezoresistive film sensor on each section; (2) determining the position of a lead, wherein the lead direction is along the cable direction and is parallel to the axial direction of the sensor; marking a sensor placing point and a lead line; (3) polishing the section of the sensor placement point; (4) excavating a groove along the drawn line; (5) connecting the sensor with the lead, pasting the sensor, and coating a layer of silicone grease after pasting; (6) placing a lead along the trench, connecting to a signal amplifier; (7) filling the unfilled part of the groove; (8) and wiping the insulating surface of the cable, and starting measurement after wiping. The scheme is directly used for slotting and wiring on the surface to be measured and damaging the surface to be measured, is similar to the scheme of embedding leads in the blade in the background, and does not relate to the problem of connection between a film and a lead.
Disclosure of Invention
The invention aims to effectively solve the problem of signal transmission in a high-temperature environment, in particular to the problem of signal leading-out of a thin film sensor, and provides a connecting structure of the thin film sensor.
The signal leading-out scheme provided by the invention mainly comprises a high-temperature-resistant film lead, a ceramic chip and a platinum wire. Taking an engine turbine blade as an example, a film sensor is arranged on the surface of the engine turbine blade, a high-temperature-resistant film lead is manufactured to extend a sensor pin to a blade tenon, the same material component as the high-temperature-resistant film lead is used as an adhesive, a ceramic sheet is used as a welding point, a groove is processed on one surface of the ceramic sheet and a platinum wire is embedded in the groove, and finally the ceramic sheet embedded with the platinum wire is adhered to the tail end of the high-temperature-resistant film lead by using the adhesive. The resistivity of the high-temperature-resistant film lead after high-temperature sintering can be reduced to about 10-4Omega cm, the welding spot is firmly contacted with the blade, and the adhesive force can reach 3 MPa. The connecting structure of the film sensor solves the problem of leading-out of an electric signal of the film sensor on the turbine blade, and can realize lead interconnection and signal transmission between a film device and the outside under a high-temperature severe environment on the basis of not changing the surface appearance and not damaging the surface structure.
The method provided by the invention is to directly write the film lead on the surface to be measured without destroying the integrity of the structure, and is a manufacturing scheme of the high-temperature film conductive lead.
The invention also provides a processing method of the connecting structure of the film sensor, which comprises the steps of preparing the high-temperature-resistant film lead and preparing welding spots, mixing and uniformly stirring the precursor liquid and the conductive nano powder to obtain slurry, and forming the high-temperature-resistant film lead through a film patterning process and curing; the slurry is also adopted for welding spot connection, and high-temperature sintering and annealing are carried out in inert atmosphere after solidification. The preparation process has the advantages of simple process, low cost and strong operability.
Finally, the invention also protects devices using the attachment structure of the film sensor, such as aircraft engine blades, and any equipment having high temperature testing applications.
One of the key points in the invention is a formula of a high-temperature-resistant film lead, and the high-temperature-resistant film lead adopts 10-60% of precursor liquid and 40-90% of conductive nano powder, wherein the precursor liquid is at least one of polycarbosilane, polysiloxane, aluminum sec-butoxide or polyborosilazane, and the conductive nano powder is at least one of titanium diboride, zirconium diboride, titanium carbide, zirconium carbide, titanium nitride or zirconium nitride. The adoption of the scheme has the advantages that the prepared mixture is slurry, has certain viscosity and fluidity, can form a preliminary structure of the high-temperature-resistant film lead through a film patterning process, and can be used as an adhesive to realize the connection of the welding point to the high-temperature-resistant film lead and the platinum wire as well as the connection of the welding point to the surface of the substrate. In the formula, the precursor liquid is used as a main body to play a connecting role, and the nano powder is dispersed in the main body to form high-viscosity fluid so as to meet the requirements of the patterning process; the conductive nano powder is mainly used for improving the conductivity of the material, reducing the thermal shrinkage after sintering and reducing the cracking degree.
Further, the mixture formed by the formula is firstly heated and cured for 30-60 min at the temperature of 160-200 ℃ to realize primary connection and fixation; then, the temperature is kept at 400-500 ℃ for 1-3 hours, and the precursor liquid in the temperature section is subjected to full crosslinking reaction, so that the yield of the ceramic is improved, and the pores are reduced; and finally, heating to 1000-1400 ℃, preserving the heat for 30-120 min, cracking the precursor at the temperature, converting the polymer into stable ceramic, and improving the conductivity of the ceramic. The adopted temperature is 1000-1400 ℃, because the ceramic changes from amorphous state to crystalline state at the temperature higher than 1400 ℃, the performance further changes, and the ceramic is powdered; the temperature is lower than 1000 ℃, and the chemical property of the material does not form a stable state, which is not beneficial to the preparation of the sensor. Preferably, the temperature is finally raised to 1100-1300 ℃ for heat preservation for 30-120 min, such as 1200 ℃.
The second key point of the invention lies in the structural design and preparation scheme of the welding spot, the welding spot adopts a ceramic chip, preferably a ceramic chip with the length and width of 2-6 mm and the thickness of 300-800 um, a groove with the depth and width close to the diameter of the platinum wire is processed on the ceramic chip, and the platinum wire with the diameter of 200-400 um is embedded in the groove. Preferably, the adhesive is applied to the surface of the ceramic plate exposed with the groove, and the adhesive is ensured to be fully contacted with the platinum wire embedded into the groove part, so that the groove is completely filled, the contact resistance is minimum, and the connection force is strongest.
The specific scheme is as follows:
a connecting structure of a film sensor comprises a base body, the film sensor, a high-temperature-resistant film lead, a platinum wire and a welding spot, wherein the film sensor is arranged on a first surface of the base body, one end of the high-temperature-resistant film lead is connected with the film sensor, and the other end of the high-temperature-resistant film lead extends outwards; the welding spot is a ceramic chip with a groove, one side of the welding spot with the groove is connected with the second surface of the substrate through an adhesive, the platinum wire is embedded in the groove of the welding spot, one end of the platinum wire is connected with the extending end of the high-temperature-resistant film lead through the adhesive, the other end of the platinum wire extends outwards, and the lead interconnection and signal transmission between the film sensor and the outside are realized through the high-temperature-resistant film lead and the platinum wire; the first surface and the second surface are covered with an insulating layer.
Further, the high-temperature-resistant film lead is prepared from the following components in percentage by mass: 10-60% of precursor liquid and 40-90% of conductive nano powder; the precursor liquid is at least one of polycarbosilane, polysiloxane, aluminum sec-butoxide or polyborosilazane, and the conductive nano powder is at least one of titanium diboride, zirconium diboride, titanium carbide, zirconium carbide, titanium nitride or zirconium nitride;
optionally, the surface of the high-temperature-resistant film lead is covered with a protective layer.
Further, the ceramic plate is an aluminum oxide, boron nitride, zirconium oxide or aluminum nitride ceramic plate;
optionally, the ceramic plate is round or square, the groove is a through groove or a semi-through groove, and the depth and the width of the groove are as close to the diameter of the platinum wire as possible; the groove processing method comprises the steps of using a laser or a diamond blade or using chemical etching.
Further, the adhesive is coated on one surface of the ceramic chip, which is exposed with the groove, and the adhesive is fully contacted with the platinum wire embedded into the groove part, so that the groove is completely filled;
optionally, the binder is prepared from the following components in percentage by mass: 10-60% of precursor liquid and 40-90% of conductive nano powder; the precursor liquid is at least one of polycarbosilane, polysiloxane, aluminum sec-butoxide or polyborosilazane, and the conductive nano powder is at least one of titanium diboride, zirconium diboride, titanium carbide, zirconium carbide, titanium nitride or zirconium nitride.
The invention also provides a processing method of the connecting structure of the film sensor, which comprises the following steps:
step 1) weighing precursor liquid and conductive nano powder according to the mass percentage;
step 2) mixing and uniformly stirring the materials weighed in the step 1) to obtain slurry;
step 3) extending the thin film sensor pin from the thin film sensor on the first surface of the substrate to the second surface of the substrate by a thin film patterning process using the slurry obtained in step 2);
step 4) heating and curing for 30-60 min at the temperature of 160-200 ℃ to form the high-temperature-resistant film lead;
step 5) processing a groove with the depth and width similar to the shape of the platinum wire at the central position of the surface of the ceramic chip, and embedding the platinum wire into the groove of the ceramic chip by adopting a physical pressing method;
step 6) using the slurry obtained in the step 2) as a binder, coating the binder on the surface of the ceramic wafer embedded with the platinum wire in the step 5), aligning the ceramic wafer with the tail end of the high-temperature-resistant film lead wire, connecting the end part of the platinum wire in the ceramic wafer with the tail end of the high-temperature-resistant film lead wire, and pressing the ceramic wafer on the second surface of the substrate by means of a clamping device;
step 7), heating and curing for 30-60 min at the temperature of 160-200 ℃;
and 8) taking down the clamping device, setting a temperature rise curve, and carrying out high-temperature sintering and annealing in an inert atmosphere.
Further, the film patterning process in the step 3) comprises electro-spray printing, wesenberg direct writing, spin coating or micro extrusion;
optionally, the inert atmosphere in step 8) may be a nitrogen atmosphere or an argon atmosphere, and the temperature rise curve is as follows: heating to 400-500 ℃ at a speed of 1 ℃/min, preserving heat for 1-3 hours, heating to 1000-1400 ℃ at a speed of 2-5 ℃/min, preserving heat for 30-120 minutes, and cooling to room temperature at a speed of 2-5 ℃/min.
Further, when the substrate may be horizontally placed such that the high temperature resistant film lead extends in a horizontal direction, the step 4) may be skipped, and the curing of the high temperature resistant film lead may be achieved via the step 7).
The invention also provides a processing method for applying the connecting structure of the film sensor and the connecting structure of the film sensor.
The invention also protects a device comprising the thin film sensor, and the thin film sensor adopts the connecting structure of the thin film sensor to realize interconnection and signal transmission with the outside.
Further, the device comprising the film sensor is an aircraft engine, the substrate is an aircraft engine blade, the first surface is a blade leading edge of the aircraft engine, and the second surface is a blade tenon of the aircraft engine.
Has the advantages that:
(1) the melting points of the precursor liquid and the conductive nano powder adopted by the invention exceed 2000 ℃, and the slurry prepared from the precursor liquid and the conductive nano powder has the advantages of high temperature resistance, high conductivity, high strength, good corrosion resistance and the like after being sintered;
(2) the method for manufacturing the high-temperature-resistant film lead and the welding spot has the advantages of simple process, convenience in operation and low requirement on equipment, and in an air atmosphere, the maximum service temperature of the high-temperature-resistant film lead exceeds 1000 ℃ and the maximum service temperature of the welding spot exceeds 1400 ℃.
(3) The high-temperature-resistant film lead and the welding spot manufactured by the invention have good adhesion, and still keep good bonding force with the substrate at high temperature (1000-1400 ℃).
(4) The invention effectively solves the problem of signal leading-out of the sensor in the high-temperature environment, the application range of the invention is not limited to the film sensor on the turbine blade of the engine, and the invention is suitable for any occasions with the film sensor which need to be tested in the high-temperature (1000-.
Drawings
In order to illustrate the technical solution of the present invention more clearly, the drawings will be briefly described below, and it is apparent that the drawings in the following description relate only to some embodiments of the present invention and are not intended to limit the present invention.
FIG. 1 is a schematic view of the location of refractory film leads and solder joints on the surface of a turbine blade according to one embodiment 1 of the present invention;
fig. 2 is a schematic diagram of a specific structure of a solder joint according to an embodiment 1 of the present invention.
In the figure, 1-blade leading edge, 2-film sensor, 3-high temperature resistant film lead, 4-blade tenon, 5-welding point, 6-platinum wire, 7-adhesive, 8-high temperature insulating layer and 9-ceramic chip.
Detailed Description
Preferred embodiments of the present invention will be described in more detail below. While the following describes preferred embodiments of the present invention, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. The examples do not specify particular techniques or conditions, and are performed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available. In the following examples, "%" means weight percent, unless otherwise specified.
Example 1
The present embodiment is described by taking the signal extraction of a film sensor on a turbine blade of an aircraft engine as an example.
Referring to fig. 1 and 2, a high temperature insulation layer 8 is arranged on a turbine blade, a high temperature resistant film lead 3 with a width of 200-500 um is prepared on the surface of the turbine blade, one end of the high temperature resistant film lead 3 is in contact with a pin of a film sensor 2 at the leading edge 1 of the blade, and the other end of the high temperature resistant film lead extends to the tenon 4 of the blade to be in contact with a welding point 5.
The welding spot 5 is formed by processing a groove with the depth and width close to the diameter of a platinum wire on a ceramic plate 9 with the shape length and width of 3 multiplied by 2mm and the thickness of 500um, wherein the groove is a semi-through groove, a laser processing method is adopted, the platinum wire 6 with the diameter of 300um is embedded in the groove, a slurry material for manufacturing a high-temperature-resistant film lead is used as a high-temperature adhesive 7, and the slurry material is coated on one surface of the ceramic plate 9, which is processed with the groove, is used for bonding the ceramic plate 9 and a blade tenon 4 and is contacted with the tail end of the high-temperature-resistant film lead 3 to form connection.
Example 2
The embodiment provides a processing method for extracting signals of a thin film sensor in embodiment 1, including:
step 1: processing a NiCrAlY and YSZ composite insulating layer with the thickness of 130um on the surface of the turbine blade in a vapor deposition mode;
step 2: weighing 30% of precursor liquid and 70% of conductive nano powder according to weight percentage; wherein the precursor liquid is polycarbosilane, and the conductive nano powder is titanium diboride;
and step 3: mixing the weighed materials in a glass ware, and carrying out magnetic stirring or ultrasonic treatment for 6 hours;
and 4, step 4: the mixed materials are fully stirred to form high-viscosity slurry which belongs to non-Newtonian fluid, a film lead wire with the thickness of 10 mu m and the width of 400 mu m is directly written on the surface of the blade in a way of Wessenberg direct writing, so that the position of a pin of a film sensor at the front edge of the blade is ensured to be contacted at one end, and the position of a welding point at the tenon of the blade is contacted at the other end;
and 5: placing the prepared blade of the lead in a 180 ℃ heat preservation box to be heated for 40min to prepare a high-temperature-resistant film lead;
step 6: processing a groove with the depth and width close to that of a platinum wire in the middle of an aluminum oxide ceramic wafer, embedding the platinum wire, uniformly coating a layer of slurry material for manufacturing a high-temperature-resistant film lead on one surface of the ceramic wafer, using the slurry material as a welding spot to be bonded to the tail end of the high-temperature film lead at the tenon of the blade, fixing the slurry material by using a metal clamp, heating and curing for 40min in a heat preservation box with the temperature of 180 ℃, taking out and cooling, and then taking down the clamp;
and 7: placing the prepared high-temperature film lead and the prepared blade of the welding spot in a high-temperature furnace, vacuumizing, filling nitrogen or argon atmosphere to atmospheric pressure, and setting a temperature rise curve as follows: heating to 450 deg.C at 1 deg.C/min, holding for 2 hr, heating to 1200 deg.C at 5 deg.C/min, holding for 80min, and cooling to room temperature at 5 deg.C/min.
The method is provided under the background of the test requirement of the film sensor on the turbine blade of the aeroengine, but the method is not limited to the use on the turbine blade, is also suitable for the electric signal transmission requirement under other high-temperature environments, and the manufacture of the high-temperature film lead can be realized by adding a protective layer in the follow-up process to improve the service life and the service temperature range.
The resistivity of the high-temperature resistant film lead can be reduced to 10-4Omega cm, the welding spot is firmly contacted with the blade, and the adhesive force can reach 3 MPa.
Example 3
A processing method of a connection structure of a thin film sensor comprises the following steps:
step 1) weighing precursor liquid and conductive nano powder, wherein the precursor liquid accounts for 10% of the total weight, and the conductive nano powder accounts for 90%; the precursor liquid is polysiloxane, and the conductive nano powder is prepared by mixing zirconium diboride and titanium carbide according to the mass ratio of 1: 1;
step 2) mixing and uniformly stirring the materials weighed in the step 1) to obtain slurry;
step 3) carrying out a film patterning process on the slurry obtained in the step 2), wherein the film patterning process is electrospraying, wesenberg direct writing, spin coating or micro extrusion, and extending a pin of a film sensor to a second surface of the substrate from the film sensor on the first surface of the substrate;
step 4), heating and curing for 60min at 160 ℃ to form a high-temperature-resistant film lead;
step 5) adopting chemical etching to process a groove with the depth and width similar to the appearance of the platinum wire at the central position of the surface of the ceramic chip, and adopting a physical pressing method to embed the platinum wire into the groove of the ceramic chip;
step 6) using the slurry obtained in the step 2) as a binder to be smeared on the surface of the ceramic wafer embedded with the platinum wire in the step 5), aligning the ceramic wafer to the tail end of the lead of the high-temperature-resistant film, connecting the end part of the platinum wire in the ceramic wafer with the tail end of the lead of the high-temperature-resistant film, and pressing the ceramic wafer on the second surface of the substrate by virtue of a clamping device;
step 7), heating and curing for 60min at the temperature of 160 ℃;
step 8) taking down the clamping device, setting a temperature rise curve, and carrying out high-temperature sintering and annealing in an inert atmosphere; specifically, the temperature rise curve is as follows: heating to 400 deg.C at 1 deg.C/min, maintaining for 3 hr, heating to 1000 deg.C at 2 deg.C/min, maintaining for 120min, and cooling to room temperature at 2 deg.C/min.
Example 4
A processing method of a connection structure of a thin film sensor comprises the following steps:
step 1) weighing precursor liquid and conductive nano powder, wherein the precursor liquid accounts for 40% of the total weight, and the conductive nano powder accounts for 60%; the precursor liquid is aluminum sec-butoxide, and the conductive nano powder is titanium nitride;
step 2) mixing and uniformly stirring the materials weighed in the step 1) to obtain slurry;
step 3) horizontally placing a substrate, and performing a film patterning process on the slurry obtained in the step 2), wherein the film patterning process is electrospraying, wesenberg direct writing, spin coating or micro extrusion, and a high-temperature-resistant film lead is preliminarily formed by extending a film sensor pin to a second surface of the substrate along the horizontal direction from a film sensor on the first surface of the substrate;
step 4) processing a groove with the depth and width similar to the appearance of the platinum wire at the central position of the surface of the zirconia ceramic plate by adopting a diamond cutter, and embedding the platinum wire into the groove of the ceramic plate by adopting a physical pressing method;
step 5) using the slurry obtained in the step 2) as a binder to be smeared on the surface of the ceramic wafer embedded with the platinum wire in the step 4), aligning the ceramic wafer to the tail end of the lead of the high-temperature-resistant film, connecting the end part of the platinum wire in the ceramic wafer with the tail end of the lead of the high-temperature-resistant film, and pressing the ceramic wafer on the second surface of the substrate by virtue of a clamping device;
step 6) heating and curing for 30min at 200 ℃;
step 7) taking down the clamping device, setting a temperature rise curve, and carrying out high-temperature sintering and annealing in an inert atmosphere; specifically, the temperature rise curve is as follows: heating to 500 deg.C at 1 deg.C/min, holding for 1 hr, heating to 1400 deg.C at 3 deg.C/min, holding for 30min, and cooling to room temperature at 3 deg.C/min.
Example 5
A processing method of a connection structure of a thin film sensor comprises the following steps:
step 1) weighing a precursor liquid and conductive nano powder, wherein the precursor liquid accounts for 20% of the total weight, and the conductive nano powder accounts for 80%; the precursor liquid is polyborosilazane, and the conductive nano powder is zirconium nitride;
step 2) mixing and uniformly stirring the materials weighed in the step 1) to obtain slurry;
step 3) carrying out a film patterning process on the slurry obtained in the step 2), wherein the film patterning process is electrospraying, wesenberg direct writing, spin coating or micro extrusion, and extending a pin of a film sensor to a second surface of the substrate from the film sensor on the first surface of the substrate;
step 4), heating and curing for 40min at the temperature of 170 ℃ to form a high-temperature-resistant film lead;
step 5) processing a groove with the depth and width similar to the appearance of the platinum wire at the central position of the surface of the aluminum nitride ceramic plate, and embedding the platinum wire into the groove of the ceramic plate by adopting a physical pressing method;
step 6) using the slurry obtained in the step 2) as a binder to be smeared on the surface of the ceramic wafer embedded with the platinum wire in the step 5), aligning the ceramic wafer to the tail end of the lead of the high-temperature-resistant film, connecting the end part of the platinum wire in the ceramic wafer with the tail end of the lead of the high-temperature-resistant film, and pressing the ceramic wafer on the second surface of the substrate by virtue of a clamping device;
step 7) heating and curing for 40min at the temperature of 170 ℃;
step 8) taking down the clamping device, setting a temperature rise curve, and carrying out high-temperature sintering and annealing in an inert atmosphere; specifically, the temperature rise curve is as follows: heating to 480 deg.C at 1 deg.C/min, maintaining for 1.5 hr, heating to 1300 deg.C at 4 deg.C/min, maintaining for 100min, and cooling to room temperature at 4 deg.C/min.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (12)
1. A connection structure of a thin film sensor, characterized in that: the high-temperature-resistant film sensor comprises a substrate, a film sensor, a high-temperature-resistant film lead, a platinum wire and a welding spot, wherein the film sensor is arranged on the first surface of the substrate; the welding spot is a ceramic piece with a groove, one side of the welding spot with the groove is connected with the second surface of the substrate through a bonding agent, the platinum wire is embedded in the groove of the welding spot, the material component which is the same as that of the high-temperature-resistant film lead is used as the bonding agent, the ceramic piece is used as the welding spot, one end of the platinum wire is connected with the extending end of the high-temperature-resistant film lead in the groove of the welding spot through the bonding agent through high-temperature sintering, the other end of the platinum wire extends outwards, and lead interconnection and signal transmission between the film sensor and the outside are realized through the high-temperature-resistant film lead and the platinum wire; the first surface and the second surface are covered with an insulating layer; the high-temperature-resistant film lead is prepared from the following components in percentage by mass: 10-60% of precursor liquid and 40-90% of conductive nano powder; the precursor liquid is at least one of polycarbosilane, polysiloxane, aluminum sec-butoxide or polyborosilazane, and the conductive nano powder is at least one of titanium diboride, zirconium diboride, titanium carbide, zirconium carbide, titanium nitride or zirconium nitride; the temperature rise curve set for high-temperature sintering is as follows: heating to 400-500 ℃ at a speed of 1 ℃/min, preserving heat for 1-3 hours, heating to 1000-1400 ℃ at a speed of 2-5 ℃/min, preserving heat for 30-120 minutes, and cooling to room temperature at a speed of 2-5 ℃/min.
2. The attachment structure of a thin film sensor according to claim 1, wherein: and the surface of the high-temperature-resistant film lead is covered with a protective layer.
3. The attachment structure of a thin film sensor according to claim 1 or 2, wherein: the ceramic plate is an alumina, boron nitride, zirconia or aluminum nitride ceramic plate.
4. The attachment structure of a thin film sensor according to claim 1 or 2, wherein: the ceramic plate is round or square, and the groove is a through groove or a semi-through groove; the groove processing method comprises the steps of using a laser or a diamond blade or using chemical etching.
5. The attachment structure of a thin film sensor according to claim 1, wherein: the adhesive is coated on one surface of the ceramic chip, which is exposed with the groove, and the adhesive is fully contacted with the platinum wire embedded into the groove part, so that the groove is completely filled.
6. A method for manufacturing a connection structure of a thin film sensor according to any one of claims 1 to 5, comprising: the method comprises the following steps:
step 1) weighing precursor liquid and conductive nano powder according to mass percentage;
step 2) mixing and uniformly stirring the materials weighed in the step 1) to obtain slurry;
step 3) extending the thin film sensor pin from the thin film sensor on the first surface of the substrate to the second surface of the substrate by a thin film patterning process using the slurry obtained in step 2);
step 4) heating and curing for 30-60 min at the temperature of 160-200 ℃ to form the high-temperature-resistant film lead;
step 5) processing a groove with the depth and width similar to the shape of the platinum wire at the central position of the surface of the ceramic chip, and embedding the platinum wire into the groove of the ceramic chip by adopting a physical pressing method;
step 6) using the slurry obtained in the step 2) as a binder, coating the binder on the surface of the ceramic wafer embedded with the platinum wire in the step 5), aligning the ceramic wafer with the tail end of the high-temperature-resistant film lead wire, connecting the end part of the platinum wire in the ceramic wafer with the tail end of the high-temperature-resistant film lead wire, and pressing the ceramic wafer on the second surface of the substrate by means of a clamping device;
step 7), heating and curing for 30-60 min at the temperature of 160-200 ℃;
step 8) taking down the clamping device, setting a temperature rise curve, sintering at high temperature in an inert atmosphere and annealing, wherein the temperature rise curve is as follows: heating to 400-500 ℃ at a speed of 1 ℃/min, preserving heat for 1-3 hours, heating to 1000-1400 ℃ at a speed of 2-5 ℃/min, preserving heat for 30-120 minutes, and cooling to room temperature at a speed of 2-5 ℃/min.
7. The method for processing a connection structure of a thin film sensor according to claim 6, wherein: the film patterning process in the step 3) comprises electro-spray printing, wesenberg direct writing, spin coating or micro extrusion.
8. The method for processing a connection structure of a thin film sensor according to claim 6, wherein: the inert atmosphere in the step 8) is nitrogen atmosphere or argon atmosphere.
9. The method for processing a connection structure of a thin film sensor according to any one of claims 6 to 8, wherein: and when the substrate is horizontally placed and the high-temperature-resistant film lead extends along the horizontal direction, skipping the step 4), and realizing the solidification of the high-temperature-resistant film lead through the step 7).
10. The method of manufacturing a connection structure of a thin film sensor according to any one of claims 6 to 9, wherein the connection structure of the thin film sensor is manufactured.
11. A device comprising a thin film sensor, wherein: the thin film sensor adopts the connection structure of the thin film sensor as claimed in claim 10, thereby realizing interconnection with the outside and signal transmission.
12. The thin film sensor-containing device of claim 11, wherein: the device that contains the film sensor is aeroengine, the base member is aeroengine blade, first surface is aeroengine's blade leading edge, the second surface is aeroengine's blade tenon.
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| CN114974762A (en) * | 2022-05-26 | 2022-08-30 | 厦门大学 | High-temperature-resistant ceramic film thermistor with linear resistor-temperature relation |
| CN117030043B (en) * | 2023-08-08 | 2024-03-19 | 岭南师范学院 | Curved polymer precursor ceramic film temperature sensor and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2094737U (en) * | 1990-12-18 | 1992-01-29 | 陈家义 | Multi-function microsecond responding permeable mambrance type temp. sensor |
| CN101324472A (en) * | 2008-07-14 | 2008-12-17 | 大连理工大学 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
| CN108534925A (en) * | 2018-03-28 | 2018-09-14 | 华南理工大学 | A kind of cable intermediate joint installation interface pressure measurement method based on pressure drag film |
| CN109974883A (en) * | 2019-04-19 | 2019-07-05 | 济南大学 | A kind of NTC temperature sensor and preparation method and application suitable for concrete temperature monitoring |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9126271B2 (en) * | 2008-10-07 | 2015-09-08 | Wisconsin Alumni Research Foundation | Method for embedding thin film sensor in a material |
-
2019
- 2019-12-11 CN CN201911263633.0A patent/CN110957294B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2094737U (en) * | 1990-12-18 | 1992-01-29 | 陈家义 | Multi-function microsecond responding permeable mambrance type temp. sensor |
| CN101324472A (en) * | 2008-07-14 | 2008-12-17 | 大连理工大学 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
| CN108534925A (en) * | 2018-03-28 | 2018-09-14 | 华南理工大学 | A kind of cable intermediate joint installation interface pressure measurement method based on pressure drag film |
| CN109974883A (en) * | 2019-04-19 | 2019-07-05 | 济南大学 | A kind of NTC temperature sensor and preparation method and application suitable for concrete temperature monitoring |
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