CN110957235B - Device and method for compensating process gas flow and semiconductor processing equipment - Google Patents
Device and method for compensating process gas flow and semiconductor processing equipment Download PDFInfo
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- CN110957235B CN110957235B CN201811123377.0A CN201811123377A CN110957235B CN 110957235 B CN110957235 B CN 110957235B CN 201811123377 A CN201811123377 A CN 201811123377A CN 110957235 B CN110957235 B CN 110957235B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention discloses a device and a method for compensating process gas flow and semiconductor processing equipment. The system comprises a process pipeline, and a gas source tank, a primary flowmeter, a buffer tank and a secondary flowmeter which are sequentially connected in series with the process pipeline and are selectively communicated; the device also comprises a pressure gauge and a controller electrically connected with the pressure gauge; the pressure gauge is used for detecting an actual gas pressure value in the cache tank in real time and sending the actual gas pressure value to the controller; and the controller is used for comparing the gas pressure actual value with a preset gas pressure standard value and adjusting the gas flow set value of the primary flowmeter according to the comparison result so as to enable the gas pressure actual value to be consistent with the gas pressure standard value. The condition that the flow of the secondary flowmeter is slightly fluctuated due to the temperature change caused by the consumption of the saturated vapor pressure of the process gas can be effectively compensated, the repeatability of the process result is improved, and the yield of the product is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a device and a method for compensating process gas flow and semiconductor processing equipment.
Background
Currently, silicon wafers are still used as raw materials in the integrated circuit manufacturing process, because silicon (or polysilicon) is oxidized in the atmospheric environment to generate substances such as silicon oxide or silicon nitride, and the like, in some metal deposition processes, the generated thin film is directly contacted with a silicon substrate, if a layer of silicon oxide and silicon nitride on the surface of the substrate increases the resistivity, the performance of the integrated circuit is affected, and therefore, silicide is removed in the early stage of film coating.
The existing silicide removing process mainly comprises a wet etching process and a dry etching process. The dry etching has obvious advantages compared with the wet etching, and the wet etching uses liquid reactants, so that the silicide etched in the deep cavity is not uniform due to surface tension, and the manufacturing yield of the integrated circuit is influenced. The dry etching adopts gas substance reaction, generally two or more than two gas reactants are introduced into a reaction chamber, and react with silicide under certain conditions to generate gaseous or solid substances which are discharged to tail gas treatment equipment at high temperature; the dry etching needs to be processed by degassing → etching → annealing → cooling for a plurality of cycles.
The most important of the etching process is the key step of actually removing silicide on silicon of a wafer, HF gas is mostly used as a reaction source for reactants, silicide etching is completed under certain conditions with other process gases, and the flow rate and the etching amount of the HF gas and the flow stability of the HF gas directly influence the etching rate and the etching amount.
At present, the HF gas flow control mostly adopts a Mass Flow Controller (MFC) to control the gas flow. However, MFC is susceptible to factors such as pressure and temperature, which can cause a change in the gas flow rate of the MFC and ultimately affect the process results.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a process gas flow compensation apparatus, a process gas flow compensation method and a semiconductor processing apparatus.
In order to achieve the above object, in a first aspect of the present invention, there is provided an apparatus for flow compensation of a process gas, the apparatus comprising a process pipeline, and a gas source tank, a primary flow meter, a buffer tank and a secondary flow meter, which are connected in series in the process pipeline and selectively connected in series; the device also comprises a pressure gauge and a controller electrically connected with the pressure gauge; wherein the content of the first and second substances,
the pressure gauge is used for detecting the actual gas pressure value in the cache tank in real time and sending the actual gas pressure value to the controller;
and the controller is used for comparing the gas pressure actual value with a preset gas pressure standard value and adjusting the gas flow set value of the primary flowmeter according to the comparison result so as to enable the gas pressure actual value to be consistent with the gas pressure standard value.
Optionally, when the gas pressure actual value is smaller than the gas pressure standard value, increasing the gas flow set value of the primary flowmeter;
and when the actual gas pressure value is larger than the standard gas pressure value, reducing the set gas flow value of the primary flowmeter.
Optionally, the following relation is satisfied among the flow set value of the primary flowmeter, the flow set value of the secondary flowmeter, the actual value of the gas pressure and the standard value of the gas pressure:
when G < T, A2= A1+ (T-G) × K1;
when G > T, A2= A1- (G-T) × K2;
when G = T, A2= A1;
wherein G is the actual value of the gas pressure, T is the standard value of the gas pressure, A2 is the set value of the flow rate of the primary flowmeter, A1 is the set value of the flow rate of the secondary flowmeter, and K1 and K2 are both compensation proportionality coefficients.
Optionally, the primary flowmeter and the secondary flowmeter are the same in model, and the compensation coefficient K1 and the compensation coefficient K2 are the same.
Optionally, the device further comprises a thermometer and a heater, the thermometer being electrically connected to the controller; wherein the content of the first and second substances,
the thermometer is used for measuring the actual gas temperature value in the cache tank in real time and sending the actual gas temperature value to the controller;
the controller is further configured to compare the actual gas temperature value with a preset standard gas temperature value, and adjust the output power of the heater according to the comparison result, so that the actual gas temperature value is consistent with the standard gas temperature value.
Optionally, the thermometer comprises a thermocouple inserted inside the buffer tank;
the heater comprises a heating rod which is inserted inside the buffer tank.
Optionally, the apparatus further comprises a purge line selectively communicating the gas source tank with the process line, the primary flow meter, the secondary flow meter, and the buffer tank.
In a second aspect of the present invention, there is provided a method for flow compensation of a process gas, which employs the apparatus for flow compensation of a process gas described above, the method comprising:
step S110, detecting the actual value of the gas pressure in the cache tank in real time by the pressure gauge, and sending the actual value of the gas pressure to the controller;
and step S120, comparing the actual gas pressure value with a preset gas pressure standard value by the controller, and adjusting the set gas flow value of the primary flowmeter according to the comparison result so as to enable the actual gas pressure value to be consistent with the standard gas pressure value.
Optionally, step S120 specifically includes:
when the actual value of the gas pressure is smaller than the standard value of the gas pressure, the set value of the gas flow of the primary flowmeter is increased;
and when the actual value of the gas pressure is larger than the standard value of the gas pressure, reducing the set value of the gas flow of the primary flowmeter.
Optionally, the following relation is satisfied among the flow set value of the primary flowmeter, the flow set value of the secondary flowmeter, the actual value of the gas pressure and the standard value of the gas pressure:
when G < T, A2= A1+ (T-G) × K1;
when G > T, A2= A1- (G-T) × K2;
when G = T, A2= A1;
wherein G is the actual value of the gas pressure, T is the standard value of the gas pressure, A2 is the set value of the flow rate of the primary flowmeter, A1 is the set value of the flow rate of the secondary flowmeter, and K1 and K2 are both compensation proportionality coefficients.
Optionally, the apparatus is the apparatus of claim 5 or 6, the method further comprising:
step S130, the thermometer measures the actual gas temperature value in the cache tank in real time and sends the actual gas temperature value to the controller;
step S140, the controller compares the actual gas temperature value with a preset standard gas temperature value, and adjusts the output power of the heater according to the comparison result, so that the actual gas temperature value is consistent with the standard gas temperature value.
In a third aspect of the invention, there is provided a semiconductor processing apparatus comprising the apparatus for flow compensation of process gas as described above.
The invention discloses a device and a method for compensating process gas flow and semiconductor processing equipment. The pressure gauge in the device is used for detecting the actual value of the gas pressure in the cache tank in real time and sending the actual value of the gas pressure to the controller; the controller can further compare the actual gas pressure value with a preset gas pressure standard value, and adjust the set gas flow value of the primary flowmeter according to the comparison result, so that the actual gas pressure value is consistent with the gas pressure standard value. Therefore, the pressure of the process gas before passing through the secondary flowmeter can be kept constant, the temperature of the process gas passing through the secondary flowmeter can be kept constant, the flow of the process gas can be kept constant, the condition that the flow of the secondary flowmeter is influenced by the temperature change of the process gas caused by the consumption of saturated vapor pressure can be effectively compensated, the repeatability of process results is improved, and the yield of products is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a prior art process gas flow control structure;
FIG. 2 is a schematic structural diagram of an apparatus for compensating a flow rate of a process gas according to a first embodiment of the present invention;
FIG. 3 is a flow chart illustrating a pressure control process inside a buffer tank according to a second embodiment of the present invention;
FIG. 4 is a linear relationship between A2 and G according to a third embodiment of the present invention;
FIG. 5 is a flow chart of a method of process gas flow compensation in a fourth embodiment of the present invention;
FIG. 6 is a flow chart of a method of process gas flow compensation in a fifth embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Fig. 1 is a schematic structural diagram of a process gas flow control structure in the prior art. It comprises two gas source tanks (wherein the gas source tank 1 is used to contain a process gas, e.g., HF gas, and the gas source tank 2 is used to contain other reaction gases), a purge line 3 corresponding to the gas source tank 1, a gas Mass Flow Controller (MFC) 4, a gas Mass Flow Controller (MFC) 5 corresponding to the gas source tank 2, and a purge line 6.
Specifically, in fig. 1, the flow control of the process gas and other reaction gases mainly employs MFC4 and MFC5, and for example, gas source tank 1 is transferred to MFC4 through a pipe by saturated vapor pressure generated by heating and finally delivered to reaction chamber 7.MFC is mass flow controller, and the principle of adoption is that control gas mass, and the gas molar mass realizes flow control, and most MFC all have the pressure compensation function, when the front end pressure value fluctuates in the effective range, make control flow keep invariable.
However, the inventor of the present invention found that, when the process is performed by using the above-mentioned structure, the saturated vapor pressure is consumed continuously, the heating power of the gas source tank cannot satisfy the vapor pressure consumption, and the saturated vapor pressure is reduced continuously, and the gas state equation: PV = nRT, where P is the gas pressure, V is the gas volume, n is the amount of the gas substance, T is the gas thermodynamic temperature, R is the gas constant, the gas pressure P decreases during consumption of the saturated vapor pressure, the gas volume V is a fixed value, and the gas constant R is a fixed value, and the MFC adopts the principle of mass control, i.e. the amount of the gas substance n is a constant value, so that the gas temperature T decreases as the gas pressure P decreases.
The inventor of the present invention finds that the existing MFC has no temperature compensation function, and has a small influence on the temperature reduction, for example, the MFC flow of the HF gas in the current process is 116sccm, the pressure value of the HF front-end pipeline is reduced in the process continuation process, and the data shows that the etching amount of the wafer silicon gradually increases with the pressure reduction, and has an obvious corresponding relationship, and at this time, if the MFC flow of the HF gas is modified to 118sccm, this will have a large influence on the etching amount result. Therefore, the gas temperature is lowered due to the consumption of saturated vapor pressure, so that the amount of actual gas passing through the MFC is changed, resulting in poor reproducibility of process results, and process control and reference are affected.
Therefore, the existing gas flow technology lacks temperature compensation, the problem of the change of the flow caused by the temperature reduction caused by the consumption of saturated vapor pressure cannot be solved, the process result is directly influenced, and the process repeatability is very poor. Based on this, the inventors of the present invention have devised the present invention.
As shown in fig. 2, a first aspect of the present invention relates to a process gas flow compensation device, which includes a process pipeline 8, and a gas source tank 1 (the interior of the gas source tank 1 is generally used for containing process gas such as HF gas, etc.), a primary flow meter 3 (generally a gas mass flow controller MFC), a buffer tank 4 and a secondary flow meter 9 (generally a gas mass flow controller MFC) connected in series in sequence and selectively communicated with the process pipeline 8. The device further includes a pressure gauge 5 and a controller (not shown in the figure) electrically connected to the pressure gauge 5, and the controller may be a control structure such as a PLC, for example. The pressure gauge 5 is used for detecting the actual gas pressure value in the cache tank 4in real time and sending the actual gas pressure value to the controller. And the controller is used for comparing the gas pressure actual value with a preset gas pressure standard value and adjusting the gas flow set value of the primary flowmeter 3 according to the comparison result so as to enable the gas pressure actual value to be consistent with the gas pressure standard value.
Specifically, as shown in fig. 2, the process of the process gas (HF gas) entering the reaction chamber: the primary flow meter 3 and the secondary flow meter 9 are set to a certain flow value, the pneumatic valves 103, 104, 105, 106, 108, 109, 111, 112 are opened, and the saturated vapor pressure generated by heating the HF gas is transmitted from the gas source tank 1, passes through the primary flow meter 3, the buffer tank 4 and the secondary flow meter 9, and finally enters the reaction chamber. The control of the gas pressure in the buffer tank 4 is particularly important because the secondary flow meter 9 can realize the flow control of the HF-last gas, so that the flow of the HF-last gas flowing into and out of the primary flow meter 3 and the secondary flow meter 9 is dynamically balanced, that is, the pressure value in the buffer tank 4 is constant, for this purpose, the actual value of the gas pressure in the buffer tank 4 can be read in real time by the pressure gauge 5, the controller compares the actual value of the gas pressure with the preset standard value of the gas pressure, and the flow set value of the primary flow meter 3 is controlled according to the comparison result, so that the actual value of the gas pressure in the buffer tank 4 can be stabilized at the standard value of the gas pressure.
The device for compensating the flow of the process gas with the structure of the embodiment can keep the pressure of the HF gas before passing through the secondary flowmeter 9 constant, so that the temperature of the HF gas passing through the secondary flowmeter 9 is unchanged, the HF flow can keep a constant value, the condition that the HF gas influences the micro fluctuation of the flow of the secondary flowmeter 9 due to the temperature change caused by the consumption of saturated vapor pressure can be effectively compensated, the repeatability of process results is improved, and the yield of products is improved.
Specifically, when the actual value of the gas pressure is smaller than the standard value of the gas pressure, the set value of the gas flow rate of the primary flowmeter 3 is increased. When the actual value of the gas pressure is larger than the standard value of the gas pressure, the set value of the gas flow rate of the primary flowmeter 3 is decreased.
As shown in fig. 2 and fig. 3, wherein fig. 3 illustrates a flow chart of pressure control of the buffer tank. The method specifically comprises the following steps:
s1, the controller reads the actual gas pressure G of the pressure gauge in real time.
And S2, writing the gas pressure standard value T required to be controlled by the cache tank into the controller.
And S3, judging whether the gas pressure actual value G is larger than or equal to the gas pressure standard value T, if so, executing a step S4, and if not, executing a step S5.
And S4, judging whether the gas pressure actual value G is larger than the gas pressure standard value T or not, if so, executing a step S7, otherwise, returning to execute the step S1.
And S5, reading the flow set value A1 of the secondary flowmeter by the controller.
And S6, writing the flow set value A2 of the primary flowmeter into the controller, and returning to execute the step S1.
Specifically, in this step, the controller writes the flow rate set value A2 of the primary flowmeter based on the difference between the gas pressure actual value G and the gas pressure standard value T in accordance with the flow rate set value A1 of the secondary flowmeter, and returns to continue to step S1. It will be appreciated that the primary meter flow set point, A2, is greater than A1. The specific magnitude of A2 can be calculated by the absolute value of the difference between G and T (denoted by M), and the larger the value of M, the larger the absolute value of the difference between A1 and A2.
And S7, the controller reads the flow set value A1 of the secondary flowmeter.
And S8, writing the flow set value A2 of the primary flowmeter into the controller, and returning to continue executing the step S1.
Specifically, in this step, the controller sets a value A1 according to the flow rate of the secondary flowmeter. And writing the flow set value A2 of the primary flowmeter based on the difference value between the gas pressure actual value G and the gas pressure standard value T, and returning to continue to execute the step S1. It will be appreciated that the flow setpoint A1 of the secondary flowmeter is greater than the flow setpoint A2 of the primary flowmeter, and that the absolute value of the difference between A1 and A2 is greater for greater values of M.
After the algorithm pressure compensation judgment, it is easy to find out through analysis that a certain linear relationship exists between the flow set value A2 of the primary flowmeter and the flow set value A1 of the read secondary flowmeter, the actual gas pressure value G of the pressure gauge and the standard gas pressure value T, and the following algorithm formula of A2 values can be listed, wherein K1 and K2 are compensation proportionality coefficients:
g < T, A2= A1+ (T-G) × K1 (1)
G > T, A2= A1- (G-T) K2 (2)
G = T, A2= A1 (3)
In the same system, two MFCs adopt unified models, compensation proportionality coefficients K1 and K2 should be the same, and the equations (1), (2) and (3) can be unified into:
A2＝A1+(T-G)*K (4)
where K is a compensation proportionality coefficient and is a positive value, the flow set value A2 of the primary flowmeter is read out three variables of the flow set value A1 of the secondary flowmeter due to the actual value G of the gas pressure of the pressure gauge, but the flow set value A1 of the secondary flowmeter is read out each time and is a fixed value as a constant, so G and A2 are linear relations as shown in fig. 4. Therefore, (T-G) × K can be used as A2 flow compensation value to supplement the pressure by flow compensation and finally maintain the pressure in the buffer tank 4 at a stable value. The compensation proportionality coefficient K can adjust the time for the pressure of the buffer tank 4 to reach the set pressure T through adjustment, and the response speed and the stability are improved.
In addition, the volume V of the buffer tank 4 is calculated, the heating temperature T of the HF gas is 45 ℃, the suggested pressure difference at the full range of 300sccm of the MFC is 15PSI-45PSI, the initial pressure of the saturated vapor pressure of the HF is 9PSI, therefore, the given pressure value P is set to 21PSI and 144.69KPa, the pipeline adopts 4 inches, the length is 1.5 meters, and the volume V1 of the pipeline is known from P (V + V1) = nRT, therefore, under the condition that the amount of the substances of the saturated vapor pressure of the buffer tank is constant, the volume V of the buffer tank 4 can be calculated, the volume of the gas of 0.1 mole is about 2L, and the saturated vapor pressure of the buffer device with the volume of 2L can better meet the flow compensation response speed when the MFC is 300 sccm.
Optionally, the device further comprises a thermometer 6 and a heater 7, the thermometer 6 being electrically connected to the controller; the thermometer 6 is used for measuring the actual gas temperature value in the buffer tank 4in real time and sending the actual gas temperature value to the controller. And the controller is also used for comparing the actual gas temperature value with a preset gas temperature standard value and adjusting the output power of the heater 7 according to the comparison result so as to enable the actual gas temperature value to be consistent with the gas temperature standard value.
Specifically, in order to maintain the temperature of the HF gas at a stable value, the temperature of the whole system is controlled by a controller, and a temperature signal collected by a thermometer 6 (typically a thermocouple) is used as a temperature control signal to heat a heater 7 (typically a heating rod or a heating band) with a certain power output. Generally from air supply jar 1 to reaction chamber all need heating, the outside cover of air supply jar 1 is equipped with heating tape 2, process line 8 adopts inside winding heating tape, the outside heat preservation that adds, the thermocouple buries the mode heating of hiding in the heating tape, MFC adopts the whole MFC of customization heating tape parcel to heat, buffer tank 4 is the stainless steel round vase, the thermocouple inserts inside, the temperature of direct measurement saturated vapor pressure, the hole is beaten to the round vase lateral wall, inserts the heating that the heating rod is used for buffer tank 4.
As shown in fig. 2, the apparatus further includes a purge line 10, the purge line 10 selectively communicating the gas source tank 1 with the process line 8, the primary flow meter 3, the secondary flow meter 9, and the buffer tank 4.
Specifically, as shown in fig. 2, purge line 10 may selectively communicate source tank 1 with process line 8, primary flow meter 3, secondary flow meter 9, and buffer tank 4 via pneumatic valves 102, 105, 106, 109, 108, 110. For example, the internal purge flow of the buffer tank 4: the pneumatic valves 102, 105, 106, 109, 108, 110 are opened, enter the foreline 11 and finally enter the tail gas treatment equipment; it is also possible to purge only the process line 8, with the pneumatic valves 102, 105, 107, 108, 110 open; the MFC may also be purged to ensure that the number of particles inside the line is maintained at a low value.
In a second aspect of the present invention, as shown in fig. 5, a method S100 for compensating a process gas flow is provided, which employs the apparatus for compensating a process gas flow described above, and the specific structure of the apparatus can refer to the related description, and will not be described herein again. The method comprises the following steps:
step S110, detecting an actual gas pressure value in a cache tank in real time by a pressure gauge, and sending the actual gas pressure value to a controller;
and step S120, comparing the actual gas pressure value with a preset standard gas pressure value by the controller, and adjusting the set gas flow value of the primary flowmeter according to the comparison result so as to enable the actual gas pressure value to be consistent with the standard gas pressure value.
The method S100 for compensating the flow rate of the process gas according to the structure of the present embodiment can keep the pressure of the HF gas before passing through the secondary flowmeter constant, so that the temperature of the HF gas passing through the secondary flowmeter is not changed, and further, the flow rate of the HF gas can be kept constant, thereby effectively compensating for the situation that the flow rate of the secondary flowmeter is slightly fluctuated due to the temperature change caused by the consumption of the saturated vapor pressure of the HF gas, improving the repeatability of the process result, and improving the yield of the product.
Optionally, step S120 specifically includes:
when the actual value of the gas pressure is smaller than the standard value of the gas pressure, the set value of the gas flow of the primary flowmeter is increased;
and when the actual value of the gas pressure is larger than the standard value of the gas pressure, reducing the set value of the gas flow of the primary flowmeter.
Optionally, the following relation is satisfied between the flow set value of the primary flow meter, the flow set value of the secondary flow meter, the gas pressure actual value and the gas pressure standard value:
when G < T, A2= A1+ (T-G) × K1;
when G > T, A2= A1- (G-T) × K2;
when G = T, A2= A1;
wherein G is the actual value of the gas pressure, T is the standard value of the gas pressure, A2 is the set value of the flow of the primary flowmeter, A1 is the set value of the flow of the secondary flowmeter, and K1 and K2 are both compensation proportionality coefficients.
Optionally, as shown in fig. 6, another method S100' for compensating the flow of the process gas is provided, which specifically includes:
step S110', the thermometer measures the actual value of the gas temperature in the buffer tank in real time and sends the actual value of the gas temperature to the controller;
and step S120', the controller compares the actual gas temperature value with a preset standard gas temperature value, and adjusts the output power of the heater according to the comparison result so as to enable the actual gas temperature value to be consistent with the standard gas temperature value.
In a third aspect of the present invention, there is provided a semiconductor processing apparatus (not shown) comprising the above-described process gas flow compensation device
The semiconductor processing equipment with the structure of the embodiment has the device for compensating the flow of the process gas, which can keep the pressure of the HF gas before the HF gas passes through the secondary flowmeter 9 constant, so that the temperature of the HF gas passing through the secondary flowmeter 9 is not changed, the flow of the HF gas can be kept at a constant value, the condition that the flow of the secondary flowmeter 9 is slightly fluctuated due to the temperature change caused by the consumption of the saturated vapor pressure of the HF gas can be effectively compensated, the repeatability of the process result is improved, and the yield of the product is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. The device for compensating the process gas flow is characterized by comprising a process pipeline, and a gas source tank, a primary flowmeter, a buffer tank and a secondary flowmeter which are sequentially connected in series with the process pipeline and selectively communicated; wherein the volume of the gas source tank is a designated value for generating saturated vapor by heating; the device also comprises a pressure gauge and a controller electrically connected with the pressure gauge; wherein the content of the first and second substances,
the pressure gauge is used for detecting the actual gas pressure value in the cache tank in real time and sending the actual gas pressure value to the controller;
and the controller is used for comparing the gas pressure actual value with a preset gas pressure standard value and adjusting the gas flow set value of the primary flowmeter according to the comparison result so as to enable the gas pressure actual value to be consistent with the gas pressure standard value.
2. The apparatus of claim 1, wherein the gas flow set point of the primary flowmeter is increased when the gas pressure actual value is less than the gas pressure standard value;
and when the actual value of the gas pressure is larger than the standard value of the gas pressure, reducing the set value of the gas flow of the primary flowmeter.
3. The apparatus of claim 2, wherein the flow set value of the primary flow meter, the flow set value of the secondary flow meter, the actual gas pressure value, and the standard gas pressure value satisfy the following relationships:
when G < T, A2= A1+ (T-G) × K1;
when G > T, A2= A1- (G-T) × K2;
when G = T, A2= A1;
wherein G is the actual value of the gas pressure, T is the standard value of the gas pressure, A2 is the set value of the flow rate of the primary flowmeter, A1 is the set value of the flow rate of the secondary flowmeter, and K1 and K2 are both compensation proportionality coefficients.
4. The device for process gas flow compensation according to claim 3, wherein the primary flowmeter is the same type as the secondary flowmeter, and the compensation factor K1 and the compensation factor K2 are the same.
5. The apparatus of any of claims 1 to 4, further comprising a thermometer and a heater, wherein the thermometer is electrically connected to the controller; wherein the content of the first and second substances,
the thermometer is used for measuring the actual gas temperature value in the cache tank in real time and sending the actual gas temperature value to the controller;
the controller is further configured to compare the actual gas temperature value with a preset standard gas temperature value, and adjust the output power of the heater according to the comparison result, so that the actual gas temperature value is consistent with the standard gas temperature value.
6. The apparatus of claim 5, wherein the thermometer comprises a thermocouple inserted inside the buffer tank;
the heater comprises a heating rod which is inserted inside the buffer tank.
7. A method of process gas flow compensation, characterized in that a device of process gas flow compensation according to any of claims 1 to 6 is used, the method comprising:
step S110, detecting a gas pressure actual value in the cache tank in real time by the pressure gauge, and sending the gas pressure actual value to the controller;
and step S120, the controller compares the gas pressure actual value with a preset gas pressure standard value, and adjusts a gas flow set value of the primary flowmeter according to a comparison result so as to enable the gas pressure actual value to be consistent with the gas pressure standard value.
8. The method of claim 7, wherein step S120 comprises:
when the actual value of the gas pressure is smaller than the standard value of the gas pressure, the set value of the gas flow of the primary flowmeter is increased;
and when the actual value of the gas pressure is larger than the standard value of the gas pressure, reducing the set value of the gas flow of the primary flowmeter.
9. The method of process gas flow compensation of claim 8, wherein the flow set value of the primary flow meter, the flow set value of the secondary flow meter, the actual value of the gas pressure, and the standard value of the gas pressure satisfy the following relationships:
when G < T, A2= A1+ (T-G) × K1;
when G > T, A2= A1- (G-T) × K2;
when G = T, A2= A1;
wherein G is the actual value of the gas pressure, T is the standard value of the gas pressure, A2 is the set value of the flow rate of the primary flowmeter, A1 is the set value of the flow rate of the secondary flowmeter, and K1 and K2 are both compensation proportionality coefficients.
10. A method of process gas flow compensation according to any one of claims 7 to 9, wherein the apparatus is an apparatus according to claim 5 or 6, the method further comprising:
step S130, the thermometer measures the actual gas temperature value in the cache tank in real time and sends the actual gas temperature value to the controller;
step S140, the controller compares the actual gas temperature value with a preset standard gas temperature value, and adjusts the output power of the heater according to the comparison result, so that the actual gas temperature value is consistent with the standard gas temperature value.
11. A semiconductor processing apparatus, characterized in that it comprises a device for flow compensation of process gases according to any one of claims 1 to 6.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
| CN106814762A (en) * | 2016-12-28 | 2017-06-09 | 武汉新芯集成电路制造有限公司 | Boiler tube detection means and detection method under a kind of low-pressure state |
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| JP2018536984A (en) * | 2015-10-05 | 2018-12-13 | ブルックス シーシーエス ゲーエムベーハーＢｒｏｏｋｓ ＣＣＳ ＧｍｂＨ | Humidity control in semiconductor systems |
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| US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
| CN106814762A (en) * | 2016-12-28 | 2017-06-09 | 武汉新芯集成电路制造有限公司 | Boiler tube detection means and detection method under a kind of low-pressure state |
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