CN110950344A - Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof - Google Patents

Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof Download PDF

Info

Publication number
CN110950344A
CN110950344A CN201911163998.6A CN201911163998A CN110950344A CN 110950344 A CN110950344 A CN 110950344A CN 201911163998 A CN201911163998 A CN 201911163998A CN 110950344 A CN110950344 A CN 110950344A
Authority
CN
China
Prior art keywords
water
silicon dioxide
self
cleaning glass
modified material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201911163998.6A
Other languages
Chinese (zh)
Other versions
CN110950344B (en
Inventor
刘花蓉
敬小东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sichuan College of Architectural Technology
Original Assignee
Sichuan College of Architectural Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sichuan College of Architectural Technology filed Critical Sichuan College of Architectural Technology
Priority to CN201911163998.6A priority Critical patent/CN110950344B/en
Publication of CN110950344A publication Critical patent/CN110950344A/en
Application granted granted Critical
Publication of CN110950344B publication Critical patent/CN110950344B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C1/00Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
    • C03C1/02Pretreated ingredients

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)

Abstract

The invention belongs to the field of green building materials, and particularly relates to a silicon dioxide modified material for producing self-cleaning glass and a preparation method thereof, which are characterized in that: the raw material formula of the silicon dioxide modified material comprises a copper source, a complex, silicon dioxide, a sulfur source, ammonia water, absolute ethyl alcohol and water, wherein Cu with molar mass in the copper source2+: s in sulfur source2+1:1, complex with Cu2+In a mass ratio of 1: 0.32-3.2, silicon dioxide SiO2The mass ratio of the complex to the complexing substance is 2: 1; s in silica and sulfur source2+The proportion is 2: 0.1-1, using three parts of water, wherein the mass volume ratio of ammonia water to secondary water is 3-5: 50, the first part of water and the second part of water are the same in dosage, and the third part of water and absolute ethyl alcohol are a plurality of. The self-cleaning glass prepared from the modified SiO2 is self-cleaned by utilizing the photocatalysis principle without coating, thereby overcoming the defect that the self-cleaning glass film is not wear-resistantThe damage is easy to occur.

Description

Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof
Technical Field
The invention belongs to the field of green building materials, and particularly relates to a silicon dioxide modified material for producing self-cleaning glass and a preparation method thereof.
Background
As the environment deteriorates year by year, the human body is extremely harmful. People have higher and higher requirements on environmental protection, and the requirements on using green and environment-friendly materials are very urgent.
Glass is an ancient building material and is widely used, and various functional glasses have appeared so far. The self-cleaning glass which can automatically clean by utilizing natural conditions and beautify the environment meets the green and environment-friendly desire of people. The self-cleaning glass can automatically keep the surface of the glass clean by utilizing sunlight, air and rainwater, and the semiconductor on the glass can decompose organic matters in the air to purify the air and catalyze oxygen in the air to change the oxygen into negative oxygen ions, so that the air is fresh, and bacteria on the surface of the glass and bacteria in the air can be killed.
At present, TiO is plated on the surface of glass2Film, TiO2Under the ultraviolet irradiation condition in sunlight, the glass can generate photocatalysis, and almost all organic matters on the surface of the glass can be decomposed. In addition, TiO2The film becomes hydrophilic under the condition of ultraviolet illumination, so that the glass can realize the functions of difficult recontamination, self-cleaning, fog prevention and the like. However, there are two major disadvantages to coating a glass surface. 1. In the solar radiation wave reaching the ground, there is only 3% -5% of the ultraviolet, and TiO2It is with this light source that the film decomposes organic contaminants. TiO 22The film has a low utilization of solar energy. 2. The film is coated on the surface of the glass, the abrasion resistance of the film is poor, and the film is easy to damage, so that the self-cleaning function is lost.
Disclosure of Invention
In order to solve the technical problems, the invention provides a silicon dioxide material for producing self-cleaning glass and a preparation method thereof, which utilize the photocatalysis principle to carry out self-cleaning without coating treatment, thereby overcoming the problems that the film layer of the self-cleaning glass is not wear-resistant and is easy to damage.
The invention discloses a silicon dioxide modified material for producing self-cleaning glass, which solves the technical problems and is characterized in that: the raw material formula of the silicon dioxide modified material comprises a copper source, a complex and silicon dioxide (SiO)2) Sulfur source, ammonia water, absolute ethyl alcohol and water, wherein the mass ratio of Cu in the copper source2+: s in sulfur source2+1:1, complex with Cu2+The mass ratio of the silicon dioxide to the complexing substance is 1: 0.32-3.2Is that 2: 1, S in silica and Sulfur Source2+The mass ratio is 2: 0.1-1, using three parts of water, wherein the mass volume ratio of the ammonia water to the second part of water is 3-5: 50, the first part of water and the second part of water are the same in dosage, and the third part of water and absolute ethyl alcohol are a plurality of.
The mass volume ratio of the ammonia water to the water is 3-5: 200-500, the ratio of the absolute ethyl alcohol to the water is 1: 1-2.
The copper source is copper chloride (CuCl)2) Copper nitrate and copper sulfate, wherein the copper source in the optimized scheme is copper chloride; the water is distilled water.
In a further optimized scheme, the copper chloride is CuCl2·2H2O。
The sulfur source is thiourea (CH)4N2S), thioacetamide, sodium sulfide and the like, wherein the sulfur source in the optimized scheme is thiourea.
The mass ratio of the copper chloride to the thiourea is 32: 38, molar mass of Cu in copper chloride2+The ratio of thiourea to mass is 1: 38; the mass ratio of silicon dioxide to thiourea is 2: 0.38-3.8.
The complex is diethyl triaminepentaacetic acid (DTPA), thioacetamide and sodium sulfide, and the complex in the optimized scheme is diethyl triaminepentaacetic acid.
Ammonia provides more OH-; copper chloride, DTPA, silicon dioxide SiO2Thiourea (CH)4N2S) and ammonia water are analytically pure raw materials, and distilled water is prepared by self.
The first part of water is used for dissolving a copper source, the second part of water is used for dissolving thiourea, and the third part of water and absolute ethyl alcohol are used for washing and suction filtration; cu in the copper source aqueous solution2+The amount content of the substance is 0.1-1.0mol/L, and the optimized scheme is that Cu in the copper source water solution2+The content of the substances is 0.5 mol/L; the amount concentration of thiourea is 0.1-1.0 mol/L.
The invention discloses a preparation method of a silicon dioxide material for producing self-cleaning glass, which comprises the following steps:
(1) preparing raw materials, and dividing water into three parts;
(2) weighing a copper source with required dosage, adding the copper source into the first part of water, and uniformly stirring;
(3) weighing the complex, adding into the copper source solution, stirring, heating to 50-70 deg.C, and maintaining at constant temperature for 4-6 min; the temperature increase helped the DTPA dissolve.
(4) Mixing silicon dioxide (SiO)2) Adding the powder into the solution, and magnetically stirring at constant temperature of 50-70 deg.C for 40min to form uniform suspension; silicon dioxide powder is used as a carrier.
(5) And weighing the sulfur source with the required dosage, adding the sulfur source into the second part of water, uniformly stirring, adding ammonia water, and uniformly stirring by magnetic force for 4-5 min. Adding ammonia water to provide more OH-
(6) Uniformly adding the solution in the step (5) into the suspension in the step (4), continuously stirring by magnetic force and keeping the set temperature, wherein the reaction time is 4.5-5.5 h; the reaction was complete when the suspension became a uniform grey-black color.
(7) And (4) washing and filtering the solution obtained in the step (6) by using absolute ethyl alcohol and distilled water to obtain solid sample powder, and drying at the drying temperature of 55-65 ℃ for 7-9h to obtain the nano-silver-zinc-tin-zinc-tin alloy.
In the optimized scheme, the reaction time in the step (6) is 5 h.
In the step (7), the drying temperature is 60 ℃, and the drying time is 8 h.
The particle size of the silicon dioxide powder is 20-40 microns. SiO22The smaller the particles, the better the effect. The particles are small, the specific surface area is large, the number of the foot points of the loaded particles is large, the loaded particles are large and dispersed, and the agglomeration phenomenon is reduced.
In the optimized scheme, the invention adopts a chemical deposition method to select SiO of one of the glass raw materials2As a carrier, Cu is selected2+The compound is a copper source, the diethyltriaminepentaacetic acid DTPA is a complexing agent, and the thiourea CH4N2S is a sulfur source, and the ammonia water provides hydroxide ions OH-.
With CuCl2·2H2O is an example to illustrate the reaction mechanism in the present invention, as follows:
Figure BDA0002286919750000031
where n is 5 and 6, Cu in the complexation process2+Complexes with coordination numbers 5 and 6 were formed simultaneously with DTPA.
Figure BDA0002286919750000032
CH4N2S+OH-→CH2N2+HS-+H2O
HS-+OH-→S2-+H2O
Cu2++S2-→CuS↓
The preparation method of the invention generates CuS, has simple process and does not need to be carried out at high temperature, thereby reducing the production cost. CuS is a narrow-band-gap semiconductor, has a forbidden band width of 2.31-2.58eV, is a stable and efficient novel photo-thermal material, and is compared with the traditional TiO2(the forbidden band width is about 3.2eV), the utilization efficiency of solar radiation by the CuS is higher. CuS is a hydrophobic material, SiO2Is a hydrophilic material, and CuS is loaded on SiO2The silica modified composite material is formed, the composite material has hydrophilic performance, pollutants are not easy to gather when the silica modified composite material is used for preparing glass, and the surface fogging can be prevented in the occasions with high indoor temperature.
Modified SiO in the invention during the process of preparing glass2Directly mixing with other glass raw materials, and producing according to conventional glass production method. SiO, unlike other coatings which are only applied to glass surfaces2The raw materials are originally involved in the preparation of the glass and are completely fused in the glass.
The invention is silicon dioxide SiO as one of the raw materials of self-cleaning glass2Modified by using the modified SiO2When the self-cleaning glass is prepared, self-cleaning is carried out by utilizing the photocatalysis principle, and coating treatment is not needed, so that the problems that the self-cleaning glass film layer is not wear-resistant and is easy to damage are solved.
Drawings
The invention will be described in further detail with reference to the following drawings and detailed description:
FIG. 1 is a flow chart of a process for preparing a silica material according to the present invention
FIG. 2 is a schematic diagram of a performance testing apparatus according to the present invention
Detailed Description
The invention will be further illustrated with reference to specific embodiments:
example 1
A modified silicon dioxide material for preparing self-cleaning glass is prepared from copper source, complex and silicon dioxide (SiO)2) Sulfur source, ammonia water, absolute ethyl alcohol and water, wherein Cu in molar mass is in the copper source2+: s in sulfur source2+1:1, complex with Cu2+The mass ratio of the silicon dioxide to the complexing agent is 1:0.32, and the mass ratio of the silicon dioxide to the complexing agent is 2: 1, S in silica and Sulfur Source2+The proportion is 2: 0.1, the mass ratio of silicon dioxide to thiourea is 2: 0.38-3.8 of water is used for three times, and the mass volume ratio of the ammonia water to the second water is 4: 50, the first water and the second water are used in the same amount, and the third water and the absolute ethyl alcohol are used in a plurality of amounts.
The first part of water dissolves a copper source, the second part of water dissolves thiourea, and the third part of water and absolute ethyl alcohol are used for washing and suction filtration; cu in the copper source aqueous solution2+The content of the substance was 0.2mol/L, and the concentration of the thiourea substance was 0.3 mol/L.
Example 2
A modified silicon dioxide material for preparing self-cleaning glass is prepared from copper source, complex and silicon dioxide (SiO)2) Sulfur source, ammonia water, absolute ethyl alcohol and water, wherein Cu in molar mass is in the copper source2+: s in sulfur source2+1:1, complex with Cu2+The mass ratio of the silicon dioxide to the complexing agent is 1:3.2, and the mass ratio of the silicon dioxide to the complexing agent is 2: 1, S in silica and Sulfur Source2+The proportion is 2: 1, using water for three times, wherein the mass-volume ratio of the ammonia water to the water for the second time is 5: 50, the first water and the second water are used in the same amount, and the third water and the absolute ethyl alcohol are used in a plurality of amounts.
Dissolving the copper source in the first part of water, dissolving thiourea in the second part of water, and dissolving the anhydrous ethanol in the third part of waterUsed for washing and suction filtration; cu in the copper source aqueous solution2+The amount of the substance was 0.5mol/L, and the amount concentration of the thiourea was 0.5 mol/L.
Example 3
A modified silicon dioxide material for preparing self-cleaning glass is prepared from copper source, complex and silicon dioxide (SiO)2) Sulfur source, ammonia water, absolute ethyl alcohol and water, wherein Cu in molar mass is in the copper source2+: s in sulfur source2+1:1, complex with Cu2+The mass ratio of the silicon dioxide to the complexing agent is 1:2, and the mass ratio of the silicon dioxide to the complexing agent is 2: 1, S in silica and Sulfur Source2+The proportion is 2: 0.5, using water for three times, wherein the mass-volume ratio of the ammonia water to the water for the second time is 3: 50, the first water and the second water are used in the same amount, and the third water and the absolute ethyl alcohol are used in a plurality of amounts.
The first part of water dissolves a copper source, the second part of water dissolves thiourea, and the third part of water and absolute ethyl alcohol are used for washing and suction filtration; cu in the copper source aqueous solution2+The amount of the substance was 0.6mol/L, and the amount concentration of the thiourea was 0.4 mol/L.
Example 4
A silicon dioxide modified material for producing self-cleaning glass is prepared from CuCl2·2H2O, diethyltriaminepentaacetic acid (DTPA) and silicon dioxide (SiO)2) Thiourea (CH)4N2S), ammonia water, absolute ethyl alcohol and water, wherein CuCl2·2H2Cu of molar mass in O2+: and (3) thiourea with heavy mass as 1: 3.8, DTPA and Cu2+In a mass ratio of 1:0.32, silicon dioxide SiO2The mass ratio of the DTPA to the DTPA is 2: 1, the mass ratio of silicon dioxide to thiourea is 2: 1.6.
the water is used in three parts, and the mass volume ratio of the ammonia water to the second part of water is 3: 50, the first part of water and the second part of water are the same in dosage, and the third part of water and absolute ethyl alcohol are a plurality of. The first part of water dissolves a copper source, the second part of water dissolves thiourea, and the third part of water and absolute ethyl alcohol are used for washing and suction filtration; cu in aqueous solution of copper source2+The amount of the substance was 0.8mol/L, and the mass concentration of thiourea was 0.5 mol/L.
The silica powder particle size was 30 microns.
The invention adopts a chemical deposition method to select silicon dioxide SiO which is one of glass raw materials2Copper chloride CuCl is selected as a carrier2·2H2O is copper source, DTPA is complexing agent, thiourea CH4N2S is a sulfur source, and the ammonia water provides hydroxide ions OH-. The reaction mechanism is as follows:
Figure BDA0002286919750000051
where n is 5 and 6, Cu in the complexation process2+Complexes with coordination numbers 5 and 6 were formed simultaneously with DTPA.
Figure BDA0002286919750000052
CH4N2S+OH-→CH2N2 +HS-+H2O
HS-+OH-→S2-+H2O
Cu2++S2-→CuS↓
The preparation method has the process flow diagram shown in figure 1, and comprises the following specific steps: :
(1) preparing raw materials, and dividing water into three parts;
(2) weighing a copper source with required dosage, adding the copper source into the first part of water, and uniformly stirring;
(3) weighing diethyl triaminepentaacetic acid, adding into the copper source solution, stirring, heating to 60 deg.C, and maintaining at constant temperature for 56 min; the temperature increase helped the DTPA dissolve. The solubility of DTPA was 5g/L at 20 ℃ and the dissolution of DTPA in water was facilitated by increasing the temperature.
(4) Adding silicon dioxide powder into the solution, and magnetically stirring for 40min at constant temperature of 60 ℃ to form uniform suspension; silicon dioxide powder is used as a carrier.
(5) Weighing thiourea with the required dosage, adding the thiourea into the second part of water, uniformly stirring, adding ammonia water, and uniformly stirring by magnetic force for 4 min. Ammonia was added to provide more OH-.
(6) Uniformly adding the solution in the step (5) into the suspension in the step (4), continuously stirring by magnetic force and keeping the set temperature, wherein the reaction time is 5 hours; the reaction was complete when the suspension became a uniform grey-black color.
(7) And (4) washing and filtering the solution obtained in the step (6) by using absolute ethyl alcohol and distilled water to obtain solid sample powder, and drying at the drying temperature of 60 ℃ for 8 hours to obtain the nano-silver-coated zinc oxide.
Example 5
A silicon dioxide modified material for producing self-cleaning glass comprises copper nitrate, diethyltriamine pentaacetic acid, silicon dioxide, thioacetamide, ammonia water, anhydrous ethanol and distilled water, wherein Cu in molar mass in the copper nitrate2+:1 of thiourea: 3.8, DTPA and Cu2+In a mass ratio of 1:3.2, silicon dioxide SiO2The mass ratio of the DTPA to the DTPA is 2: 1, the mass ratio of silicon dioxide to thiourea is 2: 0.5 Cu in aqueous solution of copper source2+The mass content is 0.6mol/L, and the mass concentration of thiourea is 0.1 mol/L. The mass volume ratio of the ammonia water to the water is 3: 200, the ratio of absolute ethyl alcohol to water is 1: 1; using distilled water in three parts, wherein the mass volume ratio of the ammonia water to the second part of distilled water is 4: 50, the first part of distilled water and the second part of distilled water are used in the same amount, and the third part of distilled water and absolute ethyl alcohol are used in a plurality of amounts. The first part of distilled water dissolves the copper source, the second part of distilled water dissolves thiourea, and the third part of distilled water and absolute ethyl alcohol are used for washing and suction filtration. The silica powder particle size was 40 microns.
The preparation method comprises the following steps:
(1) preparing raw materials, and dividing water into three parts;
(2) weighing a copper source with required dosage, adding the copper source into the first part of water, and uniformly stirring;
(3) weighing diethyl triaminepentaacetic acid, adding into the copper source solution, stirring, heating to 50 deg.C, and maintaining at constant temperature for 6 min; the temperature increase helped the DTPA dissolve.
(4) Adding silicon dioxide powder into the solution, and magnetically stirring at constant temperature of 50 ℃ for 40min to form uniform suspension; silicon dioxide powder is used as a carrier.
(5) Weighing thiourea with the required dosage, adding the thiourea into the second part of water, uniformly stirring, adding ammonia water, and uniformly stirring by magnetic force for 5 min.
(6) Uniformly adding the solution in the step (5) into the suspension in the step (4), continuously stirring by magnetic force and keeping the set temperature, wherein the reaction time is 4.5 h; the reaction was complete when the suspension became a uniform grey-black color.
(7) And (4) washing and filtering the solution obtained in the step (6) by using absolute ethyl alcohol and distilled water to obtain solid sample powder, and drying at the drying temperature of 55 ℃ for 9 hours to obtain the nano-silver-coated zinc oxide.
Example 6
A silicon dioxide modified material for producing self-cleaning glass comprises copper sulfate, diethyltriaminepentaacetic acid, silicon dioxide, sodium sulfide, ammonia water, anhydrous ethanol and distilled water, wherein Cu in molar mass in copper sulfate2+:1 of thiourea: 3.8, DTPA and Cu2+In a mass ratio of 1:1.5, silicon dioxide SiO2The mass ratio of the DTPA to the DTPA is 2: 1, the mass ratio of silicon dioxide to thiourea is 2: 3, Cu in aqueous solution of copper source2+The amount of the substance was 0.8mol/L, and the amount concentration of the thiourea was 1.0 mol/L. The mass volume ratio of the ammonia water to the water is 4: 500, the ratio of absolute ethyl alcohol to water is 1: 2. the water is used in three parts, and the mass volume ratio of the ammonia water to the second part of water is 5: 50, the first part of water and the second part of water are the same in dosage, and the third part of water and absolute ethyl alcohol are a plurality of. The first part of water dissolves the copper source, the second part of water dissolves thiourea, and the third part of water and absolute ethyl alcohol are used for washing and suction filtration.
The silica powder particle size was 20 microns.
(1) Preparing raw materials, and dividing water into three parts;
(2) weighing a copper source with required dosage, adding the copper source into the first part of water, and uniformly stirring;
(3) weighing diethyl triaminepentaacetic acid, adding into the copper source solution, stirring, heating to 70 deg.C, and holding at constant temperature for 4 min.
(4) Adding silicon dioxide powder into the solution, and magnetically stirring for 40min at constant temperature of 70 ℃ to form uniform suspension; silicon dioxide powder is used as a carrier.
(5) Weighing thiourea with the required dosage, adding the thiourea into the second part of water, uniformly stirring, adding ammonia water, and uniformly stirring by magnetic force for 4 min.
(6) Uniformly adding the solution in the step (5) into the suspension in the step (4), continuously stirring by magnetic force and keeping the set temperature, wherein the reaction time is 5.5 h; the reaction was complete when the suspension became a uniform grey-black color.
(7) And (4) washing and filtering the solution obtained in the step (6) by using absolute ethyl alcohol and distilled water to obtain solid sample powder, and drying at the drying temperature of 65 ℃ for 7 hours to obtain the nano-silver-coated zinc oxide.
Example 7
(1) Weighing a certain amount of CuCl2·2H2O is added to 50ml of distilled water and stirred uniformly. Cu2+The content is 0.1mol/L
(0.32g of Cu2+)。
(2) Weighing 1g of DTPA, adding the DTPA into the copper chloride solution, continuing to stir by magnetic force, heating to a set temperature and keeping the temperature constant. The temperature of the invention can be controlled between 50 and 70 ℃.
(3) Weighing SiO22.0g of powder as a carrier was added to the solution in step (2), and magnetic stirring was continued at constant temperature for 40min to form a uniform suspension.
(4) Weighing 0.38g of thiourea CH4N2S is added into 50ml of distilled water and stirred evenly.
(5) 4ml of ammonia water was measured and added to the solution of step (4) to provide more OH-. The mixture was stirred magnetically for about 5 minutes. The stirring rate is moderate, and in a magnetic stirrer, the rate can be controlled from a solution phenomenon. While stirring, the rate was gradually increased, and when the solution in the beaker swirled and the liquid did not splash, the rate was better at this time.
(6) And (3) uniformly adding the solution in the step (5) into the suspension in the step (3). Magnetic stirring was continued and the set temperature was maintained. After 5 hours of reaction, the suspension became a uniform gray black and the reaction was complete. The reaction mixture was washed three times with distilled water, each time requiring 100ml of water and a total of 300ml of water. The absolute ethanol is washed twice with 100ml each time, and a total of 200ml absolute ethanol is needed.
(7) And then washing the suspension with absolute ethyl alcohol and distilled water, carrying out suction filtration, and finally placing the obtained solid sample powder in an oven for drying. The temperature of the oven is set to 60 ℃, and the drying time is 8 h.
Example 8
(1) Weighing a certain amount of CuCl2·2H2O is added to 50ml of distilled water and stirred uniformly. Cu2+The content was 0.25mol/L (0.8g of Cu)2+)。
(2) Weighing 1g of DTPA, adding the DTPA into the copper chloride solution, continuing to stir by magnetic force, heating to a set temperature and keeping the temperature constant. The temperature of the invention can be controlled between 50 and 70 ℃.
(3) Weighing SiO22.0g of powder as a carrier was added to the solution in step (2), and magnetic stirring was continued at constant temperature for 40min to form a uniform suspension.
(4) Weighing 0.95g of thiourea CH4N2S is added into 50ml of distilled water and stirred evenly.
(5) An amount of 4ml of ammonia was added to the solution of step (4) to provide more OH-. The mixture was stirred magnetically for about 5 minutes. The stirring rate is moderate, and in a magnetic stirrer, the rate can be controlled from a solution phenomenon. While stirring, the rate was gradually increased, and when the solution in the beaker swirled and the liquid did not splash, the rate was better at this time.
(6) And (3) uniformly adding the solution in the step (5) into the suspension in the step (3). Magnetic stirring was continued and the set temperature was maintained. After 5 hours of reaction, the suspension became a uniform gray black and the reaction was complete. The reaction mixture was washed three times with distilled water, each time requiring 100ml of water and a total of 300ml of water. The absolute ethanol is washed twice with 100ml each time, and a total of 200ml absolute ethanol is needed.
(7) And then washing the suspension with absolute ethyl alcohol and distilled water, carrying out suction filtration, and finally placing the obtained solid sample powder in an oven for drying. The oven temperature was set at 62 ℃ and the drying time was 7.5 h.
Example 9
The rest is as in example 4, where Cu2+The content was 0.5mol/L (CuCl2 & 2H2O was 4.26g, 1.6g of Cu2+) 1.9g of thiourea, 4ml of aqueous ammonia, 2.0g of SiO2 powder, and 1g of DTPA to which distilled water was added, and still 50ml of distilled water in which thiourea was dissolved.
Example 10
The rest is as in example 4, where Cu2+The content was 0.75mol/L (2.4g of Cu)2+) 2.85g of thiourea, 4ml of ammonia, 2.0g of SiO2 powder and 1g of DTPA were added. The distilled water for dissolving thiourea was still 50 ml.
Example 11
The rest is as in example 4, where Cu2+The content was 1mol/L (3.2g of Cu)2+) 3.8g of thiourea, 4ml of aqueous ammonia, 2.0g of SiO2 powder and 1g of DTPA were added with distilled water. The distilled water for dissolving thiourea was still 50 ml.
Test No.)
The dry sample is used for decomposing organic pollutants for performance test, and the methyl orange solution is taken as a target degradation product in the specific steps. The degradation testing apparatus for methyl orange solution is shown in fig. 2.
The methyl orange is prepared into a solution of 10mg/L, then 50mg of the products in the examples 7 to 11 are weighed and added into 50ml of the methyl orange solution, and the mixture is magnetically stirred under the illumination condition of a fluorescent lamp. After 2h of testing, the degradation rates were determined as in Table 1 below.
Figure BDA0002286919750000081
Through a test of 2h, the degradation rate of methyl orange is 83-90%. Wherein, when the adding amount of the copper source is 4.26g, the degradation rate is the highest.
Methyl orange is selected as a representative of organic pollutants, and methyl blue and the like can also be used as a representative of organic pollutants.
According to the invention, silicon dioxide SiO2 which is one of raw materials of the self-cleaning glass is modified, and when the self-cleaning glass is prepared by using the modified SiO2, the self-cleaning glass is self-cleaned by utilizing a photocatalysis principle without coating, so that the problems that a self-cleaning glass film layer is not wear-resistant and is easy to damage are solved.
The photocatalysis principle is based on the oxidation-reduction capability of the photocatalyst under the condition of illumination, so that the aim of purifying pollutants is fulfilled. When the surface of the silicon dioxide is loaded with photocatalysis, the photocatalyst obtains energy under the irradiation of the sun, and electron transition occurs to leave a cavity. The electron-hole pair has a strong oxidizing property, and particularly, for organic substances, can decompose the organic substances into carbon dioxide and water. Thereby achieving the purpose of cleaning the surface of the glass.
While the foregoing shows and describes the fundamental principles and principal features of the invention, together with the advantages thereof, the foregoing embodiments and description are illustrative only of the principles of the invention, and various changes and modifications can be made therein without departing from the spirit and scope of the invention, which will fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (10)

1. A silica modified material for producing self-cleaning glass, characterized in that: the raw material formula of the silicon dioxide modified material comprises a copper source, a complex, silicon dioxide, a sulfur source, ammonia water, absolute ethyl alcohol and water, wherein the mass ratio of the copper source to the Cu in the anhydrous ethyl alcohol is Cu2+: s in sulfur source2+1:1, complex with Cu2+In a mass ratio of 1: 0.32-3.2, silicon dioxide SiO2The mass ratio of the complex to the complexing substance is 2: 1; s in silica and sulfur source2+The mass ratio is 2: 0.1-1, using three parts of water, wherein the mass volume ratio of the ammonia water to the second part of water is 3-5: 50, the first part of water and the second part of water are the same in dosage, and the third part of water and absolute ethyl alcohol are a plurality of in dosage.
2. A silica-modified material for the production of self-cleaning glass according to claim 1, characterized in that: the mass volume ratio of the ammonia water to the water is 3-5: 200-500, the mass-volume ratio of the absolute ethyl alcohol to the water is 1: 1-2.
3. A silica-modified material for the production of self-cleaning glass according to claim 1 or 2, characterized in that: the copper source is copper chloride, copper nitrate and copper sulfate, and the copper source in the optimized scheme is copper chloride; the water is distilled water.
4. A silica-modified material for the production of self-cleaning glass according to claim 3, characterized in that: the copper chloride is CuCl2·2H2O。
5. A silica-modified material for the production of self-cleaning glass according to claim 1, characterized in that: the sulfur source is thiourea, thioacetamide and sodium sulfide; in the optimized scheme, the sulfur source is thiourea.
6. A silica-modified material for the production of self-cleaning glass according to claim 1 or 2, characterized in that: the complex is diethyl triaminepentaacetic acid, thioacetamide and sodium sulfide, and the complex in the optimized scheme is diethyl triaminepentaacetic acid.
7. The method for preparing the silica modified material for producing self-cleaning glass according to claim 1, wherein the method comprises the following steps: the method comprises the following steps:
(1) preparing raw materials, and dividing water into three parts;
(2) weighing a copper source with required dosage, adding the copper source into the first part of water, and uniformly stirring;
(3) weighing the complex, adding into the copper source solution, stirring, heating to 50-70 deg.C, and maintaining at constant temperature for 4-6 min;
(4) adding silicon dioxide powder into the solution, and magnetically stirring at constant temperature of 50-70 ℃ for 40min to form uniform suspension;
(5) weighing a sulfur source with required dosage, adding the sulfur source into the second part of water, uniformly stirring, adding ammonia water, and uniformly stirring by magnetic force for 4-5 min:
(6) uniformly adding the solution in the step (5) into the suspension in the step (4), continuously stirring by magnetic force and keeping the set temperature, wherein the reaction time is 4.5-5.5 h;
(7) and (4) washing and filtering the solution obtained in the step (6) by using absolute ethyl alcohol and a third part of water to obtain solid sample powder, and drying at the drying temperature of 55-65 ℃ for 7-9h to obtain the nano-silver-zinc-tin-zinc-tin alloy.
8. The method for preparing the silica modified material for producing self-cleaning glass according to claim 7, wherein the method comprises the following steps: the particle size of the silicon dioxide powder is 20-40 microns.
9. The method for preparing the silica modified material for producing self-cleaning glass according to claim 7, wherein the method comprises the following steps: in the optimized scheme, the drying temperature in the step (7) is 60 ℃, and the drying time is 8 h.
10. The method for preparing the silica modified material for producing self-cleaning glass according to claim 7, wherein the method comprises the following steps: the reaction time in the step (6) is 5 h.
CN201911163998.6A 2019-11-25 2019-11-25 Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof Active CN110950344B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911163998.6A CN110950344B (en) 2019-11-25 2019-11-25 Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911163998.6A CN110950344B (en) 2019-11-25 2019-11-25 Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof

Publications (2)

Publication Number Publication Date
CN110950344A true CN110950344A (en) 2020-04-03
CN110950344B CN110950344B (en) 2023-02-17

Family

ID=69976700

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911163998.6A Active CN110950344B (en) 2019-11-25 2019-11-25 Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof

Country Status (1)

Country Link
CN (1) CN110950344B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210024756A1 (en) * 2018-03-16 2021-01-28 Corning Incorporated Stabilized copper glass

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03187950A (en) * 1989-12-15 1991-08-15 Hoya Corp Production of semiconductor-containing glass and semiconductor-containing glass obtained by same method
US5093286A (en) * 1989-12-18 1992-03-03 Hoya Corporation Semiconductor-containing glass and method of producing the same
CN102863155A (en) * 2012-09-25 2013-01-09 宁波大学 Preparation method of solar thermal shield glass
CN104491866A (en) * 2014-12-25 2015-04-08 东华大学 Copper sulphide/mesoporous silicon dioxide core-shell nanoparticles as well as preparation and application thereof
CN105038720A (en) * 2015-07-07 2015-11-11 安徽理工大学 Shape-stabilized phase-change composite material capable of efficiently utilizing solar energy and preparation method thereof
CN106082303A (en) * 2016-06-07 2016-11-09 上海工程技术大学 A kind of CuS material of flower-like structure and its preparation method and application
CN107184978A (en) * 2017-04-14 2017-09-22 南京邮电大学 A kind of copper sulfide@mesoporous silicon dioxide nano composites and its production and use
CN108940376A (en) * 2018-07-25 2018-12-07 广州大学 A kind of surface organic complex copper sulfide fenton catalyst and its synthetic method and application
CN109985635A (en) * 2018-01-03 2019-07-09 泉州师范学院 A kind of preparation method and its related application of CuS/ diatomite nano composite material

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3187950B2 (en) * 1992-07-07 2001-07-16 ヤンマー農機株式会社 Vegetable harvester

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03187950A (en) * 1989-12-15 1991-08-15 Hoya Corp Production of semiconductor-containing glass and semiconductor-containing glass obtained by same method
US5093286A (en) * 1989-12-18 1992-03-03 Hoya Corporation Semiconductor-containing glass and method of producing the same
CN102863155A (en) * 2012-09-25 2013-01-09 宁波大学 Preparation method of solar thermal shield glass
CN104491866A (en) * 2014-12-25 2015-04-08 东华大学 Copper sulphide/mesoporous silicon dioxide core-shell nanoparticles as well as preparation and application thereof
CN105038720A (en) * 2015-07-07 2015-11-11 安徽理工大学 Shape-stabilized phase-change composite material capable of efficiently utilizing solar energy and preparation method thereof
CN106082303A (en) * 2016-06-07 2016-11-09 上海工程技术大学 A kind of CuS material of flower-like structure and its preparation method and application
CN107184978A (en) * 2017-04-14 2017-09-22 南京邮电大学 A kind of copper sulfide@mesoporous silicon dioxide nano composites and its production and use
CN109985635A (en) * 2018-01-03 2019-07-09 泉州师范学院 A kind of preparation method and its related application of CuS/ diatomite nano composite material
CN108940376A (en) * 2018-07-25 2018-12-07 广州大学 A kind of surface organic complex copper sulfide fenton catalyst and its synthetic method and application

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
赵双生 等: "‘一锅法’水热制备CuS/C复合材料及其在超级电容器中的应用", 《化工学报》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210024756A1 (en) * 2018-03-16 2021-01-28 Corning Incorporated Stabilized copper glass

Also Published As

Publication number Publication date
CN110950344B (en) 2023-02-17

Similar Documents

Publication Publication Date Title
CN106111108B (en) A kind of preparation method of nanometer doped zinc oxide and its application in photocatalysis direction
CN107511154B (en) Sea urchin-shaped CeO 2 /Bi 2 S 3 Composite visible light catalyst and preparation method thereof
CN111450828B (en) Rapid preparation method of copper/cuprous oxide photocatalyst with octahedral structure
CN104128184A (en) Floating type CoFe2O4/TiO2/floating bead composite photocatalyst and preparation method thereof
CN104277626A (en) Air purification lacquer and preparation method thereof
CN105540733A (en) TiO2-reduced graphene composite and preparation method thereof and application of TiO2-reduced graphene composite to artificial sea water system
CN107824221A (en) A kind of preparation method for nitrogen oxides photochemical catalyst of degrading
CN106334554A (en) ZnO/Ag composite nano-photocatalyst with high-efficiency photocatalytic activity under visible lights
CN103611549A (en) Preparation method of copper zinc tin sulfide/graphene oxide composite semiconductor photocatalyst
CN108499582A (en) A kind of preparation method of composite photo-catalyst
CN110950344B (en) Silicon dioxide modified material for producing self-cleaning glass and preparation method thereof
CN110155958B (en) Hydrangea-shaped Cu 2-x Se nano material and its preparation and application
CN105618103B (en) A kind of preparation method of two-dimensional magnetic photochemical catalyst
CN104998666B (en) A kind of method and catalyst applications for preparing bowknot shape fluorine oxygen bismuth photochemical catalyst
CN110201681A (en) A kind of preparation method of air cleaning ZnO/CuS/Ag catalysis material
CN109437292A (en) A kind of ultra-thin two-dimension titanium dioxide nanoplate efficiently synthesized and preparation method
CN109046388A (en) Utilize the method for antibiotic in copper sulfide/pucherite heterojunction photocatalyst removal water body
CN110180557B (en) Ag2S/TiO2Preparation method and application of composite photocatalyst
CN111111696B (en) Solvothermal method for synthesizing sulfide-TiO with regular morphology in one pot2Method for compounding nanostructures and use thereof
CN109160494B (en) Preparation method of wool-ball-shaped CdSe nano material
CN104826639B (en) Silver phosphate/reduced graphene/titanic oxide nano compound material and preparation method
CN109294553B (en) Titanium dioxide doped rare earth complex composite material and preparation method thereof
CN104801320B (en) Bismuthyl fluorite photochemical catalyst and preparation method thereof
CN111036240A (en) MoS2/CuO heterojunction photocatalyst and preparation method and application thereof
CN116173951A (en) Preparation method of photocatalytic coating material for treating volatile air pollutants

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant