CN110943014A - Post-processing method for prolonging processing waiting time - Google Patents
Post-processing method for prolonging processing waiting time Download PDFInfo
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- CN110943014A CN110943014A CN201811119935.6A CN201811119935A CN110943014A CN 110943014 A CN110943014 A CN 110943014A CN 201811119935 A CN201811119935 A CN 201811119935A CN 110943014 A CN110943014 A CN 110943014A
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000012545 processing Methods 0.000 title claims abstract description 23
- 238000012805 post-processing Methods 0.000 title claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims abstract description 114
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 97
- 230000005540 biological transmission Effects 0.000 claims abstract description 43
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 43
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 29
- 231100000719 pollutant Toxicity 0.000 claims abstract description 29
- 238000012546 transfer Methods 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 15
- 239000000356 contaminant Substances 0.000 claims description 15
- 238000005086 pumping Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 11
- 102100033121 Transcription factor 21 Human genes 0.000 description 7
- 101710119687 Transcription factor 21 Proteins 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- 230000002035 prolonged effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 230000032258 transport Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000000809 air pollutant Substances 0.000 description 1
- 231100001243 air pollutant Toxicity 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the field of semiconductor production, and discloses a post-processing method for prolonging processing waiting time, which comprises the following steps: providing a wafer transmission box, placing a plurality of wafers into the wafer transmission box, wherein the wafer transmission box is provided with an air outlet hole and an air inlet hole; the wafer transfer box is connected to the cleaning equipment in a transmission mode through the conveying equipment, an air suction pump and a nitrogen filling device are arranged in the cleaning equipment, when the wafer transfer box is in a connection and positioning mode from a transmission state, the air suction pump is connected with the air outlet hole and used for sucking air inside the wafer transfer box, and the nitrogen filling device is connected with the air inlet hole and used for filling nitrogen into the box body; opening an air suction pump communicated with the wafer transfer box to suck air from the interior of the wafer transfer box so as to reduce the concentration of gas pollutants in the wafer transfer box for the first time; and after the air-extracting step, opening a nitrogen filling device communicated with the wafer transfer box to fill nitrogen into the wafer transfer box so as to reduce the concentration of the gas pollutants in the wafer transfer box for the second time.
Description
Technical Field
The invention relates to the field of semiconductor production, in particular to a post-processing method for prolonging the waiting time of a processing procedure.
Background
A Front Opening Unified Pod (FOUP) is used to store and transport wafers during the wafer fabrication process. However, the gas contaminants in the gas entering the interior of the foup can cause damage to the wafers stored within the foup. In the prior art, nitrogen is usually filled to reduce the concentration of the gaseous pollutants in the wafer transfer box, so as to inhibit the negative effects of the gaseous pollutants on the wafer, thereby prolonging the process waiting time of the wafer in the wafer transfer box. However, once the nitrogen filling is stopped, the nitrogen leaks due to the poor air tightness of the sidewall of the pod, and air pollutants are continuously released from the surface of the pod and the wafer, thereby affecting the nitrogen filling effect, and thus the waiting time of the wafer inside the pod cannot be effectively prolonged.
Disclosure of Invention
The invention aims to overcome the problem that the process waiting time of wafers in a wafer transmission box can not be effectively prolonged in the prior art, and provides a post-process method for prolonging the process waiting time, wherein an air suction pump is connected to an air outlet of the wafer transmission box, the wafer transmission box is firstly sucked before nitrogen is filled, so that gas pollutants in pores in the side wall of the wafer transmission box are firstly sucked out of the wafer transmission box, then the positions of the pores are filled with the nitrogen, and after the nitrogen filling is stopped, the dissipation amount of the gas pollutants is greatly reduced, so that the process waiting time of the wafers in the wafer transmission box is prolonged, and meanwhile, the elasticity of production and delivery is also improved.
In order to achieve the above object, an embodiment of the present invention provides a post-process method for prolonging a process waiting time, including:
providing a wafer transmission box, placing a plurality of wafers into the wafer transmission box, wherein the wafer transmission box is provided with an air outlet and an air inlet; the wafer transmission box is transmitted and connected to a cleaning device through a single wafer processing device, an air suction pump and a nitrogen filling device are arranged in the cleaning device, when the wafer transmission box is in a transmission state to a connection positioning state, the air suction pump is connected with the air outlet hole and used for sucking air from the inside of the wafer transmission box, and the nitrogen filling device is connected with the air inlet hole and used for filling nitrogen into the box body;
opening the air suction pump communicated with the wafer transfer box to suck air from the interior of the wafer transfer box so as to reduce the concentration of gas pollutants in the wafer transfer box for the first time;
after the air-extracting step, opening a nitrogen filling device communicated with the wafer transmission box to fill nitrogen into the wafer transmission box so as to reduce the concentration of gas pollutants in the wafer transmission box for the second time and recover the internal pressure of the wafer transmission box at least to the internal pressure of the stage of providing the wafer transmission box
Preferably, the air outlet hole and the air inlet hole are arranged at the bottom of the wafer conveying box.
Preferably, the wafers processed by the single wafer processing in the wafer transfer box have an extended process wait time of 20 minutes or more and the concentration of the gaseous contaminants is less than 5 ppbv.
Preferably, the air pump is turned off after a first time period is reached in the air pumping process, and the first time period ranges from 2 to 5 minutes.
Preferably, the nitrogen filling device is closed after a second time period is reached in the nitrogen filling process, and the second time period ranges from 7 minutes to 30 minutes.
Through the technical scheme, the post-processing method for prolonging the processing waiting time is characterized in that the air outlet of the wafer transmission box is connected with an air pump, the wafer transmission box is firstly pumped before nitrogen is filled, so that gas pollutants in the pores in the side wall of the wafer transmission box are firstly pumped out of the wafer transmission box, then the positions of the pores are filled with the nitrogen, and after the nitrogen filling is stopped, the dissipation amount of the gas pollutants is greatly reduced, the time of the wafer waiting post-processing in the wafer transmission box is further prolonged, and meanwhile, the flexibility of production and delivery is also improved.
Drawings
FIG. 1 is a cross-sectional view of a wafer during processing wait time for defects to form;
FIG. 2 is a flowchart illustrating a post-process method for increasing process latency according to an embodiment of the present invention;
FIGS. 3A-3D are cross-sectional views of a cleaning apparatus and a FOUP for steps of a post-process method for increasing process latency according to embodiments of the present invention;
FIG. 4 is a graph illustrating the change in concentration of gaseous contaminants within a FOUP during a post-processing method for increasing process latency according to an embodiment of the present invention.
Description of the reference numerals
1 wafer transfer cassette 2 wafer
3 conveying device 4 cleaning device
5 substrate 6 Metal layer
7 dielectric layer 8 surface groove
10 air outlet hole and 11 air inlet hole
40 air pump 41 nitrogen filling device
A1, A2 single wafer processing equipment B gas contamination
C nitrogen gas
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
FIG. 1 is a cross-sectional view of a wafer during processing wait time to produce defects. As shown in fig. 1, the wafer includes a substrate 5, a metal layer 6, a dielectric layer 7, and a surface groove 8 formed on the wafer during the wafer manufacturing process. During the time period when the wafer waits for the next process in the wafer transmission box 1, substances such as gas pollutants, water, air, etc. are easily deposited in the surface grooves 8 of the wafer, and these substances and the surface of the wafer undergo a chemical reaction (such as an oxidation reaction), which may cause the defect of the black area shown in fig. 1 to appear on the surface of the wafer, and this defect may affect the structure and performance of the wafer, and reduce the yield of the finished product manufactured by the wafer.
In view of the above technical problems, embodiments of the present invention provide a post-process method for prolonging the waiting time of a process. FIG. 2 is a flow chart illustrating a post-process method for increasing process latency according to an embodiment of the present invention. As shown in fig. 2, the post-process method for prolonging the process waiting time includes a cleaning apparatus 4 disposed between the single wafer processing apparatuses a1 and a2, after the wafers 2 loaded on the foup 1 are processed by the single wafer processing apparatus a1 and then loaded back to the foup 1, the transportation apparatus 3 transports the foup 1 to the cleaning apparatus 4 to reduce the concentration of the gas contaminants in the foup 1, and then the transportation apparatus 3 transports the foup 1 to the single wafer processing apparatus a2 for the next process. The post-processing method for prolonging the processing waiting time provided by the embodiment of the invention can effectively reduce the concentration of the gas pollutants in the wafer transfer box 1 and maintain the concentration for a longer time period through the cleaning equipment 4, thereby prolonging the processing waiting time of the wafer 2 and simultaneously improving the flexibility of production and delivery.
Fig. 3A to 3D are cross-sectional views illustrating a cleaning apparatus and a foup for steps of a post-process method for increasing process latency according to an embodiment of the present invention. As shown in fig. 3A to 3C, in the embodiment of the present invention, the foup 1 may be provided with an air outlet hole 10 and an air inlet hole 11. The foup 1 is transferred between and connected to the single wafer processing apparatuses by means of the transfer apparatus 3. The cleaning apparatus 4 may include a suction pump 40 and a nitrogen gas filling device 41, the suction pump 40 may be connected to the gas outlet hole 10 of the foup 1 when the foup is in a transfer state to a connection position with the single wafer processing apparatus, the suction pump 40 may be used for sucking the inside of the foup 1, and the nitrogen gas filling device 41 may be connected to the gas inlet hole 11 of the foup 1, and the nitrogen gas filling device 41 may be used for filling the inside of the foup 1 with nitrogen gas.
As shown in fig. 3A, a foup 1 is provided, a plurality of wafers 2 are placed in the foup 1, a suction pump 40 is connected to the outlet hole 10 of the foup 1, and a nitrogen filling device 41 is connected to the inlet hole 11 of the foup 1. At this time, the interior of the pod 1 is at a normal pressure, and the gaseous pollutants B in the pod 1 adhere to the sidewall of the pod 1 and the surface of the wafer 2.
As shown in fig. 3B, the interior of the foup 1 is evacuated by opening the pump 40 in communication with the foup 1, so that a portion of the gaseous contaminants B is pumped out of the interior of the foup 1 to reduce the concentration of the gaseous contaminants in the foup 1 for the first time. At this time, the inside of the foup 1 is in a negative pressure state, and when the airtightness of the foup 1 is insufficient, a small amount of air may enter the inside of the foup 1, and the small amount of air entering the foup 1 does not adversely affect the wafer 2 in the aseptic environment of wafer production.
As shown in fig. 3C, immediately after the pumping step, the nitrogen gas filling device 41 connected to the foup 1 is opened to fill the interior of the foup 1 with nitrogen gas C, so that part of the gaseous pollutants B is further squeezed out of the interior of the foup 1, thereby reducing the concentration of the gaseous pollutants in the foup 1 for the second time, and simultaneously recovering the internal pressure of the foup 1 to at least the internal pressure at the stage of providing the foup 1 (i.e., the internal pressure before the pumping step).
As shown in fig. 3D, after the nitrogen filling step, the interior of the foup 1 is in a positive pressure state, and when the hermeticity of the foup 1 is insufficient, a small amount of nitrogen C may escape to the outside of the foup 1, but no air may enter the interior of the foup 1, and the remaining gaseous pollutants B are also driven to move toward the sidewall of the foup 1, thereby inhibiting the gaseous pollutants B from escaping toward the wafer 2.
According to the post-processing method for prolonging the processing waiting time, provided by the embodiment of the invention, the cleaning equipment 4 is arranged, after the wafer in the wafer transmission box 1 is processed by the previous processing, the wafer transmission box 1 is transmitted to the cleaning equipment 4, the air suction step and the nitrogen filling step are sequentially completed, so that the gas pollutants in the pore space in the side wall of the wafer transmission box 1 are firstly sucked out of the wafer transmission box 1, then the pore space is filled with the nitrogen, and the concentration of the gas pollutants in the wafer transmission box 1 is reduced twice through the two steps of air suction and air filling. After the nitrogen filling is stopped, the dissipation amount of the gas pollutants in the wafer transmission box 1 is greatly reduced, so that the time of the wafer waiting for the post-processing in the wafer transmission box 1 is prolonged, and meanwhile, the flexibility of production and delivery is improved.
As shown in fig. 3A to 3D, the air outlet hole 10 and the air inlet hole 11 of the foup 1 may be disposed at the bottom of the foup 1. Since the density of nitrogen gas is lower than that of air, the nitrogen gas is filled from the bottom of the foup 1 to the inside of the foup 1 to facilitate the nitrogen gas to be sufficiently and uniformly distributed in the foup 1. In addition, the air outlet 10 and the air inlet 11 can be disposed at the bottom of the pod 1 to facilitate air convection inside the pod 1, which facilitates discharging gaseous pollutants, thereby more effectively reducing the concentration of gaseous pollutants inside the pod 1.
FIG. 4 is a graph illustrating the change in concentration of gaseous contaminants within a foup according to a post-processing method for increasing process latency in accordance with an embodiment of the present invention. Fig. 4 shows a graph of the concentration of the gaseous contaminants inside the foup according to the post-process method for increasing the waiting time of the process of the present invention, wherein the graph i represents the concentration of the gaseous contaminants inside the foup filled with only nitrogen. As shown in fig. 4, the dotted line may represent the switching time between the pumping and the nitrogen filling in the post-processing method for prolonging the waiting time of the process according to the embodiment of the present invention, the switching time may be about 6 minutes, the curve i on the left side of the dotted line represents the concentration change of the gas contaminant in the pumping step, and the curve i on the left side of the dotted line represents the concentration change of the gas contaminant in the nitrogen filling step. Curve i the concentration of the gaseous contaminants inside the pod 1 was very low and very stable for a period of time of about 12 minutes to about 27 minutes after the two steps of pumping and filling with nitrogen, and was still below 5ppbv (1ppbv represents one part per billion of the total volume of the material volume station) up to 40 minutes, although the concentration of the gaseous contaminants slightly increased thereafter. Although the initial concentration of the gaseous pollutants in the curve II is lower than that in the curve I, after only nitrogen is filled, the concentration of the gaseous pollutants begins to rise rapidly in about 17 minutes, until the concentration of the gaseous pollutants in the curve II exceeds the concentration of the gaseous pollutants in the curve I by one time after 40 minutes, and in the period of about 23 minutes, the concentration of the gaseous pollutants in the curve I is always lower than that in the curve II and is maintained at a lower concentration level, so that the process waiting time of the wafer at the stage is effectively prolonged. Therefore, compared to the nitrogen-only treatment method, the wafer 2 processed by the single wafer process in the foup 1 of the post-process method with the extended process waiting time provided by the embodiment of the present invention has the extended process waiting time of 20 minutes or more, and the concentration of the gas contaminants in the foup 1 is less than 5 ppbv.
In one embodiment of the present invention, the air pump 40 is turned off after a first period of time has been reached during the air pumping process, which may range from 2 to 5 minutes.
In one embodiment of the present invention, the nitrogen filling means 41 is turned off after a second period of time, which may range from 7 to 30 minutes, has been reached during the filling of the nitrogen gas.
The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited thereto. Within the scope of the technical idea of the invention, numerous simple modifications can be made to the technical solution of the invention, including combinations of the individual specific technical features in any suitable way. The invention is not described in detail in order to avoid unnecessary repetition. Such simple modifications and combinations should be considered within the scope of the present disclosure as well.
Claims (5)
1. A post-processing method for prolonging processing waiting time is characterized by comprising the following steps:
providing a wafer transmission box, placing a plurality of wafers into the wafer transmission box, wherein the wafer transmission box is provided with an air outlet and an air inlet; the wafer transmission box is transmitted and connected to a cleaning device through a single wafer processing device, an air suction pump and a nitrogen filling device are arranged in the cleaning device, when the wafer transmission box is in a transmission state to a connection positioning state, the air suction pump is connected with the air outlet hole and used for sucking air from the inside of the wafer transmission box, and the nitrogen filling device is connected with the air inlet hole and used for filling nitrogen into the box body;
opening the air suction pump communicated with the wafer transfer box to suck air from the interior of the wafer transfer box so as to reduce the concentration of gas pollutants in the wafer transfer box for the first time;
and after the air pumping step, opening a nitrogen filling device communicated with the wafer transfer box to fill nitrogen into the wafer transfer box so as to reduce the concentration of gas pollutants in the wafer transfer box for the second time and recover the internal pressure of the wafer transfer box at least to the internal pressure of the stage of providing the wafer transfer box.
2. The method as claimed in claim 1, wherein the gas outlet and the gas inlet are disposed at a bottom of the FOUP.
3. The extended processing wait time post-processing method of claim 1, wherein said wafers processed by a single wafer process in said foup have an extended processing wait time of 20 minutes or more and a concentration of said gaseous contaminants of less than 5 ppbv.
4. The method of claim 1, wherein the pump is turned off after a first time period is reached during the pumping process, the first time period being in a range of 2 to 5 minutes.
5. The method of claim 1, wherein the nitrogen filling device is turned off after a second duration is reached during the filling of the nitrogen, and the second duration is in a range of 7 to 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811119935.6A CN110943014B (en) | 2018-09-25 | 2018-09-25 | Post-processing method for prolonging processing waiting time |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811119935.6A CN110943014B (en) | 2018-09-25 | 2018-09-25 | Post-processing method for prolonging processing waiting time |
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| CN110943014A true CN110943014A (en) | 2020-03-31 |
| CN110943014B CN110943014B (en) | 2023-04-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114313543A (en) * | 2020-09-30 | 2022-04-12 | 长鑫存储技术有限公司 | Conveying box and material conveying system |
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2018
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| US6123120A (en) * | 1997-12-03 | 2000-09-26 | Kabushiki Kaisha Toshiba | Clean storage equipment for substrates and method of storing substrates |
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| JP2006049683A (en) * | 2004-08-06 | 2006-02-16 | Renesas Technology Corp | Method for manufacturing semiconductor integrated circuit device |
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| CN106505023A (en) * | 2015-09-08 | 2017-03-15 | 古震维 | A kind of with the wafer handler for blowing off function |
| CN107437521A (en) * | 2016-05-26 | 2017-12-05 | 北京北方华创微电子装备有限公司 | The wafer transfer approach and device of a kind of etching machine |
| CN107958851A (en) * | 2016-10-14 | 2018-04-24 | 北京北方华创微电子装备有限公司 | Transmission chamber and semiconductor processing equipment |
Non-Patent Citations (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114313543A (en) * | 2020-09-30 | 2022-04-12 | 长鑫存储技术有限公司 | Conveying box and material conveying system |
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| CN110943014B (en) | 2023-04-14 |
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