CN110932699A - Miniaturized high-suppression LTCC column-type inductance band-pass filter - Google Patents
Miniaturized high-suppression LTCC column-type inductance band-pass filter Download PDFInfo
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Abstract
The invention discloses a miniaturized high-suppression LTCC (Low temperature Co-fired ceramic) columnar inductance band-pass filter which comprises a ceramic substrate, an external input electrode, an external output electrode and an external grounding electrode, wherein the ceramic substrate is provided with a first electrode and a second electrode; the ceramic matrix comprises four parallel resonances, two grounding polar plates, five series connection capacitors and a source-load coupling capacitor. The invention has the advantages of miniaturization, high near-end inhibition, low cost, high batch consistency, novel structure and the like.
Description
Technical Field
The invention relates to the technical field of filters, in particular to a miniaturized high-suppression LTCC column type inductance band-pass filter.
Background
With the continuous acceleration of global informatization process, the communication industry has rapidly developed. The rapid development of the communication industry and the increasing market demand have made higher demands on communication equipment. The high performance, high integration, high reliability and low cost of communication equipment have become the inevitable trend of future development.
Since the last 80 th century, the Low Temperature Co-fired Ceramic (Low Temperature Co-fired Ceramic) technology has been widely applied to the design and manufacture of microwave passive devices. Compared with the traditional thin film technology, the LTCC technology has a multilayer structure, so that the integration level of the module is higher, and the size is smaller; high-conductivity materials such as gold, silver, copper and the like are used as printed circuit paste, so that the power loss of the module is reduced. LTCC technology has the characteristics of high Q value, high reliability, etc., and has been widely used in the manufacture of miniaturized electronic devices.
Band-pass filters are widely used in WLANs, DSTV, Bluetooth, satellite televisions, PHS, and cordless telephones as indispensable components of communication equipment. The band-pass filter at present is mainly divided into two structures for implementation: one is realized through traditional low pass filter and high pass filter series connection, and this structure has the passband width, and the insertion loss advantage such as little, nevertheless has the structure complicacy in the design process, and parasitic coupling phenomenon is many, and the debugging is difficult, and production batch uniformity is difficult. Secondly, through traditional band-pass filter structure, this structure has the suppression height, advantages such as simple structure, but the product passband width of actual design is little, and the insertion loss is great.
Therefore, how to select a proper structure, the bottleneck of the conventional band-pass filter in structure is overcome, the LTCC band-pass filter with excellent electrical performance and high production batch consistency is a key problem faced by the design of the conventional LTCC band-pass filter.
Disclosure of Invention
The invention provides a miniaturized high-suppression LTCC column-type inductance band-pass filter, and aims to solve the problems that an existing band-pass filter is difficult to select a structure, low in near-end suppression, poor in production batch consistency, difficult to debug and the like. The filter greatly reduces the inductance, and adopts a vertical direct insertion type (VIC) capacitor structure, so that the capacitance of the parallel resonance capacitor is greatly increased under the same area, the parallel resonance formed by the parallel connection of the inductor and the resonance capacitor is large, and the designed band-pass filter has higher near-band rejection. Meanwhile, the source-load coupling capacitance is introduced, so that the near-end inhibition amount of the passband is increased. The four parallel resonances in the filter adopt a mirror symmetry structure, a ground layer is additionally arranged on the top layer in the ceramic substrate, the internal layout is optimized, the design difficulty is reduced, and the size of the filter is greatly reduced and is only 3.2mm multiplied by 2.5mm multiplied by 1.5 mm. The specific technical scheme of the invention is as follows:
a miniaturized high-suppression LTCC inductance column type band-pass filter comprises a ceramic substrate, an external input electrode, an external output electrode and an external grounding electrode; the external input electrode and the external output electrode are symmetrically printed on the left side and the right side of the ceramic substrate; the external grounding electrodes are symmetrically printed on the front side and the rear side of the ceramic substrate; the ceramic matrix comprises four parallel resonances, two grounding polar plates, five series connection capacitors and a source-load coupling capacitor C04; the two grounding polar plates comprise a first grounding polar plate SD1 and a second grounding polar plate SD2, wherein the second grounding polar plate SD2 adopts a defected ground structure and comprises four circular defects; the five series-connected capacitors comprise an input capacitor C0, a first series capacitor C1, a second series capacitor C2, a third series capacitor C3 and an output capacitor C4;
the four parallel resonances are distributed in the ceramic substrate in a grid-shaped bilateral symmetry manner, and comprise a first parallel resonance formed by connecting a first inductor L1 and a first resonance capacitor C10 in parallel, a second parallel resonance formed by connecting a second inductor L2 and a second resonance capacitor C20 in parallel, a third parallel resonance formed by connecting a third inductor L3 and a third resonance capacitor C30 in parallel, and a fourth parallel resonance formed by connecting a fourth inductor L4 and a fourth resonance capacitor C40 in parallel; the first parallel resonance and the second parallel resonance are connected through a first series capacitor C1, the second parallel resonance and the third parallel resonance are connected through a second series capacitor C2, and the third parallel resonance and the fourth parallel resonance are connected through a third series capacitor C3;
six layers are divided in the ceramic substrate, wherein the first layer and the fifth layer are a first grounding layer SD1 and a second grounding layer SD2, the second grounding layer SD2 is of a defect ground structure and comprises four circular defects, and the two grounding layers are connected with an external grounding electrode of the ceramic substrate;
the input capacitor C0 is positioned on the second, third and fourth layers of the ceramic substrate, the second layer and the fourth layer are connected through a through-hole column, and the third layer is connected with an external input electrode;
the first resonant capacitor C10 is positioned on the fourth and sixth layers of the ceramic substrate, the fourth and sixth layers of polar plates penetrate through the fifth layer of second grounding layer SD2 through the via post to be connected with the circular defect, and the fourth layer of polar plates are connected with the lower polar plate of the input capacitor C0 through the transmission line; the first inductor L1 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the first inductor L1 is connected with the first grounding layer SD1, and the lower end of the first inductor L1 is connected with the upper polar plate of the first resonant capacitor C10 through a via post;
the second resonance capacitor C20 is positioned on the fourth and sixth layers of the ceramic substrate, and the fourth and sixth layers of polar plates are connected through the fifth layer of second grounding layer SD2 circular defects by via posts; the second inductor L2 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the second inductor L2 is connected with the first grounding layer SD1, the lower end of the second inductor L2 is connected with the upper polar plate of the second resonant capacitor C20 through a via post, and is connected with the upper polar plate of the first series capacitor C1 through a transmission line;
the output capacitor C4 is positioned on the second, third and fourth layers of the ceramic substrate, the second layer and the fourth layer are connected through a through-hole column, and the third layer is connected with an external output electrode;
the fourth resonant capacitor C40 is positioned on the fourth and sixth layers of the ceramic substrate, the fourth and sixth layers of polar plates penetrate through the fifth layer of second grounding layer SD2 through the via post to be connected with the circular defect, and the fourth layer of polar plates are connected with the lower polar plate of the output capacitor C4 through the transmission line; the fourth inductor L4 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the fourth inductor L4 is connected with the first grounding layer SD1, and the lower end of the fourth inductor L4 is connected with the upper polar plate of the fourth resonant capacitor C40 through a via post;
the third resonant capacitor C30 is positioned on the fourth and sixth layers of the ceramic substrate, and the fourth and sixth layers of polar plates are connected through the fifth layer of second grounding layer SD2 circular defects by via posts; the third inductor L3 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the third inductor L3 is connected with the first grounding layer SD1, the lower end of the third inductor L3 is connected with the upper polar plate of the third resonant capacitor C30 through a via post, and is connected with the upper polar plate of the third series capacitor C3 through a transmission line;
the second series capacitor C2 is positioned on the third layer of the ceramic substrate and consists of two polar plates which are respectively connected with the upper polar plates of the fourth layer of the second resonance capacitor C20 and the third resonance capacitor C30 through via posts; the source-load coupling capacitor C04 is located on the third layer of the ceramic substrate and is respectively coupled with the upper electrode plate of the first resonant capacitor C10 and the upper electrode plate of the fourth resonant capacitor C40 by adopting a C-shaped structure.
Furthermore, the first inductor L1, the second inductor L2, the third inductor L3, and the fourth inductor L4 are implemented by using pillar-shaped metal via posts, and the inductance is adjusted by adjusting the height and radius of the metal via posts;
the first resonant capacitor C10, the second resonant capacitor C20, the third resonant capacitor C30, the fourth resonant capacitor C40, the input capacitor C0 and the output capacitor C4 are realized by adopting vertical direct insertion type capacitor plates, and the capacitance value is adjusted by adjusting the distance between the plates and the small opposite area of the plates;
the first series capacitor C1, the first series capacitor C2, the first series capacitor C3, the fourth series capacitor C4 and the source-load coupling capacitor C04 are realized by using a pair of flat plate type capacitor plates, and the capacitance value is adjusted by adjusting the distance between the plates and the small facing area of the plates.
Further, the structures of the first inductor L1, the second inductor L2, the first resonant capacitor C10, the second resonant capacitor C20, and the first series capacitor C1 are mirror-symmetrical to the structures of the third inductor L3, the fourth inductor L4, the third resonant capacitor C30, and the fourth resonant capacitor C40.
Further, the second series capacitor C2 and the third series capacitor C3 are formed in a central symmetry.
Further, the ceramic material was a ceramic material having a dielectric constant of 9.8 and a loss tangent of 0.003, and the external ground electrode, the external input electrode, and the external output electrode were printed using a silver material.
Further, the overall filter size is 3.2mm × 2.5mm × 1.5 mm.
Furthermore, the passband range of the filter is 2.21-2.41GHz, the maximum insertion loss of the passband is 2dB, the rejection of 0-1.95GHz at the low-end stop band is more than 25dB, a transmission zero is generated at 2.1GHz, and the rejection reaches 30 dB; the inhibition on the high-end stop band at 2.60GHz-3GHz is more than 25dB, a transmission zero point is generated at 2.53GHz, and the inhibition reaches 29 dB.
The invention has the following beneficial effects:
(1) the cylindrical inductor is innovatively used, and the problems that the traditional multilayer spiral broken line inductor is large in size, parasitic coupling effect among layers is high, printing is not uniform in actual LTCC process production and the like are solved. Simultaneously, by using the column inductor, the inductance can be greatly reduced, and the resonance effect of parallel resonance is enhanced.
(2) An upper and a lower ground layer structures are introduced. The introduction of the top grounding layer enables the inductor to be directly grounded, so that redundant transmission lines and through holes are avoided, unnecessary parasitic coupling phenomenon is reduced, and the complexity of design is reduced. The bottom grounding layer adopts a defected ground structure, and the parallel resonance capacitor realizes a polar plate-ground-polar plate vertical direct insertion type (VIC) structure through four circular defects on the grounding layer, so that the capacitance per unit area is greatly increased, and the resonance in a limited area is greatly improved by combining with the small inductance of the cylindrical inductor, so that the designed band-close rejection of the band-pass filter is higher.
(3) By introducing the C-type source-load coupling capacitor, the near-end stop band rejection is increased, and the space utilization rate is greatly increased. The designed band-pass filter can restrain 30dB at the low-end 2.1GHz and restrain 29dB at the high-end 2.53GHz, and has good electrical performance.
(4) The whole internal portion of ceramic base adopts the mirror symmetry structure, and four parallel resonance adopt field word bilateral symmetry overall arrangement again simultaneously for inner structure is more simple, and the adjustment volume significantly reduces in the design process. Meanwhile, the four capacitors connected in series are all in a structure of a common polar plate, and are directly coupled with the capacitors connected through a single-layer polar plate, so that unnecessary polar plates are reduced, and the complexity of a model structure is reduced.
Drawings
FIG. 1 is an equivalent circuit schematic of an LTCC bandpass filter of the present invention;
FIG. 2 is a schematic diagram of the external structure of the LTCC band pass filter of the present invention;
FIG. 3 is a schematic diagram of the internal overall structure of the LTCC bandpass filter of the present invention;
FIG. 4 is a schematic diagram of a front view of an LTCC bandpass filter of the present invention;
FIG. 5 is a plan view of layer 1 of the LTCC bandpass filter of the present invention;
FIG. 6 is a 3D structural diagram of the inductive column of the LTCC bandpass filter of the present invention;
FIG. 7 is a plan view of layer 2 of the LTCC bandpass filter of the present invention;
FIG. 8 is a plan view of layer 3 of the LTCC bandpass filter of the present invention;
FIG. 9 is a plan view of the layer 4 of the LTCC bandpass filter of the present invention;
FIG. 10 is a plan view of the layer 5 of the LTCC bandpass filter of the present invention;
FIG. 11 is a plan view of layer 6 of the LTCC bandpass filter of the present invention;
FIG. 12 is a graph of the results of an S11 simulation of an LTCC bandpass filter of the present invention;
FIG. 13 is a graph of the results of an S21 simulation of an LTCC bandpass filter of the present invention;
Detailed Description
In order to make the technical embodiments of the present invention more clearly and in detail, the present invention is further described in detail below with reference to the accompanying drawings and preferred embodiments. The specific embodiments described herein are merely illustrative of the invention and are not intended to be limiting.
Fig. 1 is an equivalent circuit schematic diagram of the LTCC bandpass filter of the present invention. As shown in fig. 1, the present invention adopts a conventional four-step band-pass filter structure, which includes a first resonant unit formed by connecting a capacitor C10 in parallel with an inductor L1, a second resonant unit formed by connecting a capacitor C20 in parallel with an inductor L2, a third resonant unit formed by connecting a capacitor C30 in parallel with an inductor L3, a fourth resonant unit formed by connecting a capacitor C40 in parallel with an inductor L4, an input capacitor C0, an output capacitor C4, and three series capacitors C1, C2, and C3. The four resonant units are independent of each other and are connected with each other through three series-connected capacitors C1, C2 and C3, and the first resonant unit and the fourth resonant unit are connected with each other through introducing a source-load coupling capacitor C04, so that the near-end rejection of the passband is increased.
Fig. 2 is a schematic diagram of an external structure of the LTCC bandpass filter of the present invention, which includes a ceramic substrate case, an external input electrode, an external output electrode, and an external ground electrode. The invention has the external overall dimension of 3.2mm multiplied by 2.5mm multiplied by 1.5mm, and adopts the ceramic material with the dielectric constant of 9.8 and the loss tangent of 0.003. The external input electrode, the external output electrode and the external grounding electrode are all printed on the ceramic substrate by adopting a silver material, and the external input electrode and the external output electrode are symmetrically printed in the middle parts of the left side and the right side of the ceramic substrate; the external grounding electrode is divided into a front part and a rear part which are symmetrically printed on the front side and the rear side of the ceramic substrate.
Fig. 3 and 4 are a schematic diagram of an internal overall structure and a schematic diagram of a front view structure of the LTCC bandpass filter of the present invention, respectively. The internal integral structure is divided into six layers, wherein the inductor with the columnar structure is arranged between the first layer and the second layer, and the internal integral structure adopts a vertical interconnection structure. The first layer and the fifth layer are grounding polar plates, wherein the second grounding polar plate SD2 of the fifth layer has four circular defects which are distributed in a mode of Chinese character tian and are in bilateral symmetry, and the radiuses of the four defect circles are all 0.128 mm. Four inductors L1, L2, L3 and L4 are arranged between the first layer and the second layer, and are cylinders with the radius of 0.08mm and the height of 1.16mm, wherein L1 and L2 are respectively in mirror symmetry with L4 and L3. The upper ends of the four inductance columns are directly connected with the first grounding polar plate SD1, so that unnecessary transmission lines and via columns are reduced, and the redundant parasitic coupling phenomenon is avoided. The lower end of the L1 is connected with the upper plate of the fourth layer of the first resonance capacitor C10 through a via post to form a first parallel resonance. The lower end of the L2 is connected with a transmission line connected with the upper plate of the first series capacitor C1 and the upper plate of the second resonance capacitor C20 through via posts to form a second parallel resonance. Similarly, the first resonance unit and the second resonance unit are respectively in mirror symmetry with the fourth resonance unit and the third resonance unit, and the overall structure layout is the same. Specifically, as described above, the four resonant units have symmetrical structures, so that the sizes of the first resonant capacitor C10 and the fourth resonant capacitor C40, and the sizes of the second resonant capacitor C20 and the third resonant capacitor C30 are the same, and only the structures of the first resonant capacitor C10 and the second resonant capacitor C20 are described herein. The first resonance capacitor C10 and the second resonance capacitor C20 both adopt a vertical direct insertion type (VIC) structure, an upper pole plate of a fourth layer of the first resonance capacitor C10 is connected with a lower pole plate of a sixth layer through a through hole and penetrates through a circular defect of a fifth second grounding layer SD2, and the fifth resonance capacitor C10 and the second grounding layer SD2 form a pole plate-ground-pole plate vertical direct insertion type capacitor structure. Similarly, the upper plate of the fourth layer of the second resonant capacitor C20 is connected with the lower plate of the sixth layer of the capacitor through a through hole passing through the circular defect of the fifth layer of the second grounding layer SD2, and forms a plate-ground-plate vertical direct insertion type capacitor structure with the second grounding layer SD 2.
The input capacitor C0 and the output capacitor C4 are also in a vertical in-line (VIC) structure, and are mirror images of each other, and only the input capacitor C0 structure is described here. The fourth layer lower pole plate of the input capacitor C0 is connected with the upper pole plate of the first resonance capacitor through a transmission line; the second layer of upper polar plate is connected with the lower polar plate through the through hole; the middle layer is a third layer of input polar plate which is connected with an external input electrode, the three layers of polar plates form a polar plate-input-polar plate vertical direct insertion type structure, and the capacitance under the same unit area is larger. The first series capacitor C1 and the third series capacitor C3 are in mirror symmetry and have the same structure size, a double-plate structure is adopted, the upper pole plate of the third layer is respectively connected with the lower end via hole columns of the second inductor L2 and the third inductor L3 through transmission lines, and forms a double-plate (MIM) capacitor with the upper pole plate of the fifth layer of the first parallel resonance C10 and the fourth parallel resonance C40, and redundant pole plates are prevented from being introduced. The two polar plates of the third layer of the second series capacitor C2 are respectively connected with the upper polar plate of the fourth layer of the second resonance capacitor C20 and the upper polar plate of the fourth layer of the third resonance capacitor through via holes. The lower side electrode plate of the third layer extends to form an upper electrode plate of a third resonance capacitor C30, the upper side electrode plate extends to form an upper electrode plate of a second resonance capacitor C20, the upper electrode plate and the lower electrode plate are coupled with each other to form a second series capacitor C2, the capacitance of the capacitor adopting the structure is large, the capacitance of the two electrode plates can be independently controlled, and debugging is facilitated. The source-load coupling capacitor C04 is located on the third layer of the ceramic substrate and is respectively coupled with the upper electrode plate of the first resonant capacitor C10 and the upper electrode plate of the fourth resonant capacitor C40 to form capacitors by adopting a C-shaped structure.
The specific structure of the layers and inductors of the bandpass filter described above is shown in fig. 5-11.
Fig. 12-13 are simulation graphs of S parameter results of the bandpass filter of the present invention. As shown in the figure, the passband range of the band-pass filter is 2.21-2.41GHz, the maximum insertion loss of the passband is 2dB, the rejection of 0-1.95GHz at the low-end stop band is more than 25dB, a transmission zero point is generated at 2.1GHz, and the rejection reaches 30 dB; the inhibition on the high-end stop band at 2.60GHz-3GHz is more than 25dB, a transmission zero point is generated at 2.53GHz, and the inhibition reaches 29 dB.
The invention has the advantages of novel and simple structure, high near zone inhibition, convenient debugging, high production batch consistency and the like, and is suitable for the batch production of the LTCC process.
The above description is a preferred embodiment of the present invention, and the present invention is not limited to the above embodiment. Other embodiments based on the embodiments of the present invention, which can be obtained by those skilled in the art through various modifications, equivalent substitutions and improvements without inventive work, should be included within the scope of protection of the claims.
Claims (7)
1. A miniaturized high-suppression LTCC column-type inductance band-pass filter comprises a ceramic substrate, an external input electrode, an external output electrode and an external grounding electrode; the external input electrode and the external output electrode are symmetrically printed on the left side and the right side of the ceramic substrate; the external grounding electrodes are symmetrically printed on the front side and the rear side of the ceramic substrate; the ceramic matrix comprises four parallel resonances, two grounding polar plates, five series connection capacitors and a source-load coupling capacitor C04; the two grounding polar plates comprise a first grounding polar plate SD1 and a second grounding polar plate SD2, wherein the second grounding polar plate SD2 adopts a defected ground structure and comprises four circular defects; the five series-connected capacitors comprise an input capacitor C0, a first series capacitor C1, a second series capacitor C2, a third series capacitor C3 and an output capacitor C4.
The four parallel resonances are distributed in the ceramic substrate in a grid-shaped bilateral symmetry manner, and comprise a first parallel resonance formed by connecting a first inductor L1 and a first resonance capacitor C10 in parallel, a second parallel resonance formed by connecting a second inductor L2 and a second resonance capacitor C20 in parallel, a third parallel resonance formed by connecting a third inductor L3 and a third resonance capacitor C30 in parallel, and a fourth parallel resonance formed by connecting a fourth inductor L4 and a fourth resonance capacitor C40 in parallel; the first parallel resonance and the second parallel resonance are connected through a first series capacitor C1, the second parallel resonance and the third parallel resonance are connected through a second series capacitor C2, and the third parallel resonance and the fourth parallel resonance are connected through a third series capacitor C3;
six layers are divided in the ceramic substrate, wherein the first layer and the fifth layer are a first grounding layer SD1 and a second grounding layer SD2, the second grounding layer SD2 is of a defect ground structure and comprises four circular defects, and the two grounding layers are connected with an external grounding electrode of the ceramic substrate;
the input capacitor C0 is positioned on the second, third and fourth layers of the ceramic substrate, the second layer and the fourth layer are connected through a through-hole column, and the third layer is connected with an external input electrode;
the first resonant capacitor C10 is positioned on the fourth and sixth layers of the ceramic substrate, the fourth and sixth layers of polar plates penetrate through the fifth layer of second grounding layer SD2 through the via post to be connected with the circular defect, and the fourth layer of polar plates are connected with the lower polar plate of the input capacitor C0 through the transmission line; the first inductor L1 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the first inductor L1 is connected with the first grounding layer SD1, and the lower end of the first inductor L1 is connected with the upper polar plate of the first resonant capacitor C10 through a via post;
the second resonance capacitor C20 is positioned on the fourth and sixth layers of the ceramic substrate, and the fourth and sixth layers of polar plates are connected through the fifth layer of second grounding layer SD2 circular defects by via posts; the second inductor L2 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the second inductor L2 is connected with the first grounding layer SD1, the lower end of the second inductor L2 is connected with the upper polar plate of the second resonant capacitor C20 through a via post, and is connected with the upper polar plate of the first series capacitor C1 through a transmission line;
the output capacitor C4 is positioned on the second, third and fourth layers of the ceramic substrate, the second layer and the fourth layer are connected through a through-hole column, and the third layer is connected with an external output electrode;
the fourth resonant capacitor C40 is positioned on the fourth and sixth layers of the ceramic substrate, the fourth and sixth layers of polar plates penetrate through the fifth layer of second grounding layer SD2 through the via post to be connected with the circular defect, and the fourth layer of polar plates are connected with the lower polar plate of the output capacitor C4 through the transmission line; the fourth inductor L4 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the fourth inductor L4 is connected with the first grounding layer SD1, and the lower end of the fourth inductor L4 is connected with the upper polar plate of the fourth resonant capacitor C40 through a via post;
the third resonant capacitor C30 is positioned on the fourth and sixth layers of the ceramic substrate, and the fourth and sixth layers of polar plates are connected through the fifth layer of second grounding layer SD2 circular defects by via posts; the third inductor L3 is positioned between the first layer and the second layer of the ceramic substrate, the upper end of the third inductor L3 is connected with the first grounding layer SD1, the lower end of the third inductor L3 is connected with the upper polar plate of the third resonant capacitor C30 through a via post, and is connected with the upper polar plate of the third series capacitor C3 through a transmission line;
the second series capacitor C2 is positioned on the third layer of the ceramic substrate and consists of two polar plates which are respectively connected with the upper polar plates of the fourth layer of the second resonance capacitor C20 and the third resonance capacitor C30 through via posts; the source-load coupling capacitor C04 is located on the third layer of the ceramic substrate and is respectively coupled with the upper electrode plate of the first resonant capacitor C10 and the upper electrode plate of the fourth resonant capacitor C40 by adopting a C-shaped structure.
2. The miniaturized, high suppression LTCC column-type inductive bandpass filter of claim 1,
the first inductor L1, the second inductor L2, the third inductor L3 and the fourth inductor L4 are realized by column-shaped metal hole columns, and the inductance is adjusted by adjusting the height and the radius of the metal hole columns;
the first resonant capacitor C10, the second resonant capacitor C20, the third resonant capacitor C30, the fourth resonant capacitor C40, the input capacitor C0 and the output capacitor C4 are realized by adopting vertical direct insertion type capacitor plates, and the capacitance value is adjusted by adjusting the distance between the plates and the small opposite area of the plates;
the first series capacitor C1, the first series capacitor C2, the first series capacitor C3, the fourth series capacitor C4 and the source-load coupling capacitor C04 are realized by using a pair of flat plate type capacitor plates, and the capacitance value is adjusted by adjusting the distance between the plates and the small facing area of the plates.
3. The miniaturized high suppression LTCC column-type inductive band pass filter of claim 1, wherein the structures of the first inductor L1, the second inductor L2, the first resonant capacitor C10, the second resonant capacitor C20 and the first series capacitor C1 are mirror symmetric to the structures of the third inductor L3, the fourth inductor L4, the third resonant capacitor C30 and the fourth resonant capacitor C40.
4. The miniaturized high suppression LTCC column inductor bandpass filter of claim 1, wherein the second series capacitor C2 is centrosymmetric to the third series capacitor C3.
5. The miniaturized high suppression LTCC pillar inductor bandpass filter of claim 1, wherein the ceramic body material is a ceramic material with a dielectric constant of 9.8 and a loss tangent of 0.003, and the external ground electrode, the external input electrode, and the external output electrode are printed with a silver material.
6. The miniaturized, high suppression LTCC pillar inductor bandpass filter of claim 1 wherein the overall filter dimensions are 3.2mm x 2.5mm x 1.5 mm.
7. The miniaturized high-rejection LTCC cylindrical inductive band-pass filter of claim 1, wherein the pass-band range of the filter is 2.21-2.41GHz, the maximum insertion loss of the pass-band is 2dB, the rejection is greater than 25dB at 0-1.95GHz of the low-end stop-band, a transmission zero is generated at 2.1GHz, and the rejection reaches 30 dB; the inhibition on the high-end stop band at 2.60GHz-3GHz is more than 25dB, a transmission zero point is generated at 2.53GHz, and the inhibition reaches 29 dB.
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| CN112187209A (en) * | 2020-10-23 | 2021-01-05 | 嘉兴佳利电子有限公司 | Ultra-wide passband five-order bandpass filter based on LTCC process |
| WO2022083059A1 (en) * | 2020-10-23 | 2022-04-28 | 嘉兴佳利电子有限公司 | Ltcc process-based ultrawide-passband fifth-order bandpass filter |
| US12074579B2 (en) | 2020-10-23 | 2024-08-27 | Jiaxing Glead Electronics Co., Ltd | Ultra-wide passband five-order band-pass filter based on LTCC process |
| CN112367057A (en) * | 2020-11-09 | 2021-02-12 | 中国科学院微电子研究所 | Frequency hopping filter with composite structure and adjusting method thereof |
| CN113193850A (en) * | 2021-04-01 | 2021-07-30 | 北京全路通信信号研究设计院集团有限公司 | Low-power filter |
| CN113612459A (en) * | 2021-08-30 | 2021-11-05 | 深圳振华富电子有限公司 | Miniaturized low-loss LTCC band-pass filter |
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