CN110922962A - Porous silicon dioxide composite material containing quantum dots and preparation method and application thereof - Google Patents

Porous silicon dioxide composite material containing quantum dots and preparation method and application thereof Download PDF

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CN110922962A
CN110922962A CN201911239851.0A CN201911239851A CN110922962A CN 110922962 A CN110922962 A CN 110922962A CN 201911239851 A CN201911239851 A CN 201911239851A CN 110922962 A CN110922962 A CN 110922962A
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quantum dots
porous silica
composite material
silicon dioxide
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陈臻
邵根荣
李阳
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Guangdong Poly Optoelectronics Tech Co ltd
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
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    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
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    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots

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Abstract

The invention belongs to the field of materials, and discloses a porous silicon dioxide composite material containing quantum dots. The porous silicon dioxide composite material containing quantum dots has good stability and good luminous intensity, and the LED lamp bead prepared by directly contacting the porous silicon dioxide composite material containing quantum dots with an LED chip has slow luminous brightness attenuation and long service life.

Description

Porous silicon dioxide composite material containing quantum dots and preparation method and application thereof
Technical Field
The invention belongs to the field of materials, and particularly relates to a porous silicon dioxide composite material containing quantum dots, and a preparation method and application thereof.
Background
The quantum dot material is a nano semiconductor material which can emit fluorescence in a specific wavelength range after being excited by light electricity. The fluorescence emitted by the quantum dots has the characteristics of adjustability along with the size and the composition of the quantum dots, narrow half-peak width of an emission spectrum, high quantum efficiency and the like. Therefore, the quantum dots as luminescent materials have great application prospects in the fields of display, illumination, biological fluorescence detection and the like.
At present, quantum dot materials are applied to traditional liquid crystal display panels, and products with color gamut display superior to that of the existing OLED (organic light emitting semiconductor) can be prepared. The solution of quantum dot material to realize high color gamut display mainly includes: (1) packaging the quantum dot material into an optical film material, and adding the optical film material into the interlayer of the liquid crystal panel; (2) and encapsulating quantum dot materials into the glass tube, and adding the quantum dot materials to two sides of the liquid crystal panel. However, the solution of directly encapsulating (3) the quantum dot material in the existing mature uv or blue LED chip is more advantageous in terms of cost, process and light conversion effect. Different from other two packaging schemes, the quantum dot material in the scheme (3) is in direct contact with the LED chip, and due to the limitation of the packaging space in the chip, the quantum dot material is not suitable to be protected by adding too many additives on the premise of ensuring the luminous efficiency. If more reagents are not added to protect the quantum dot material, the high temperature generated by the LED chip has stronger fluorescence quenching effect and light efficiency degradation effect on the quantum dot material, so that the stability of the quantum dot material is deteriorated, and the service life of the whole LED is shortened. In the prior art, the stability of the quantum dot material is improved by chemically modifying the quantum dot material, but the luminous intensity of the chemically modified quantum dot material is generally greatly reduced.
Therefore, it is desirable to provide a composite quantum dot material that has good stability, can be in direct contact with an LED chip, and has good lifetime and luminous intensity.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art described above. Therefore, the porous silica composite material containing quantum dots is good in stability, and is applied to an LED and directly contacted with an LED chip to manufacture an LED lamp bead, so that the LED lamp bead is good in light emitting effect and long in service life. In addition, the porous silicon dioxide composite material containing the quantum dots prepared by the invention basically keeps consistent with the luminous intensity of the unmodified quantum dots.
The quantum dots enter the pores of the porous silica in a solution swelling mode, and after a solvent in the pores of the porous silica is removed, the pores of the porous silica shrink, so that the quantum dots are stably embedded in the pores of the porous silica, and the porous silica composite containing the quantum dots is formed.
Preferably, the porous silica has a microscopic morphology of spherical, tubular or amorphous.
Preferably, the particle size of the porous silica is 50-300 nm; further preferably, the particle size of the porous silica is 100-200 nm.
Preferably, the pore diameter of the porous silica is 1 to 18 nm; further preferably, the pore diameter of the porous silica is 5 to 15 nm.
Preferably, the porous silica has a specific surface area of 300-1400m2(ii)/g; more preferably, the porous silica has a specific surface area of 300-1200m2/g。
Preferably, the quantum dots can emit light waves with the wavelength of 380-700nm by photoexcitation.
Preferably, the particle size of the quantum dots is 3-15nm, and more preferably, the particle size of the quantum dots is 7-10 nm.
Preferably, the cation in the quantum dot is Cd2+、Zn2+、Cu2+、Ga3+、In3+、Ag+Or Pb2+At least one of (1).
Preferably, the anion in the quantum dot is Se2-、S2-、Te2-、P3-、N3-、Cl-、Br-Or I-At least one of (1).
Preferably, the quantum dots are at least one of group II-VI or III-V quantum dots of the periodic Table, such as CdZnSeS, CdSeS, ZnCdSe, CdTe, CdTeS, ZnCdTeS, InGaP or CuInS2At least one of (1). Namely, the quantum dots are quantum dots belonging to an alloy structure.
Preferably, the quantum dot is at least one of quantum dots with core-shell structures II-VI and III-V in the periodic table, such as at least one of CdSe @ ZnS (CdSe is used as a core and ZnS is used as a shell), CdS @ ZnS, ZnCdSe @ ZnS or InP @ ZnS.
Preferably, the quantum dot is a perovskite-structured quantum dot, and the structure of the quantum dot is ABX3Wherein A is Cs+B is Pb2+X is Cl-、Br-Or I-At least one of (1).
Preferably, in the quantum dot-containing porous silica composite material, the mass ratio of the quantum dots to the porous silica is 1 (10-100); further preferably, in the quantum dot-containing porous silica composite material, the mass ratio of the quantum dots to the porous silica is 1 (20-80).
Preferably, in the quantum dot-containing porous silica composite material, the pore diameter of the porous silica is different from the particle size of the quantum dot by 0-10%; further preferably, the pore diameter of the porous silica is 0 to 10% larger than the particle size of the quantum dot.
A preparation method of a porous silica composite material containing quantum dots comprises the following steps:
(1) mixing the quantum dots and the porous silicon dioxide, placing the mixture in a reaction device, vacuumizing the reaction device, and then introducing inert gas;
(2) and adding a solvent into the reaction device, heating and stirring, cooling, centrifuging, and drying to obtain the porous silica composite material containing quantum dots.
Preferably, in the step (1), the mass ratio of the quantum dots to the porous silica is 1 (2-60); further preferably, the mass ratio of the quantum dots to the porous silica is 1 (5-50).
Preferably, in the step (1), the reaction apparatus is a reaction apparatus such as a flask, a test tube, or a reaction vessel.
Preferably, in step (1), the reaction apparatus is evacuated to a vacuum level of less than-0.1 MPa (the evacuation time is 30 to 60 minutes under laboratory-standard conditions).
Preferably, in the step (1), the inert gas is at least one selected from nitrogen, helium, neon and argon.
Preferably, the solvent has a solubility for the quantum dots that is greater than the solubility for the porous silica under the same conditions (e.g., at the same temperature and pressure).
Preferably, in the step (2), the solvent is a low-polarity solvent, such as at least one of toluene, xylene, n-hexane, n-octane, cyclohexane, chloroform, benzene, carbon tetrachloride or carbon disulfide. The solvent is a low-polarity solvent, which is beneficial to the dissolution of quantum dots and the easy entry of the quantum dots into the pores of the porous silicon dioxide, and is also beneficial to the swelling and enlargement of the pore diameter of the silicon dioxide, thereby further improving the probability of the quantum dots entering the porous silicon dioxide.
Preferably, in the step (2), the heating temperature is 40-110 ℃; further preferably, the heating temperature is 50 to 100 ℃.
Preferably, in the step (2), the stirring speed is 400-1500 rpm; further preferably, the stirring speed is 400-1200 rpm. The quantum dots are fully dissolved in the solvent by stirring, and the porous silicon dioxide is fully dispersed in the solvent, so that the quantum dots can enter the pores of the porous silicon dioxide.
Preferably, in the step (2), the stirring time is 1 to 3 hours.
Preferably, in the step (2), the concentration of the quantum dots in the reaction device in the solvent is 1-10 mg/mL; further preferably, the concentration of the quantum dots in the solvent in the reaction device is 1-3 mg/mL.
Preferably, in the step (2), the concentration of the porous silica in the solvent in the reaction device is 5-50 mg/mL; further preferably, the concentration of the porous silica in the solvent in the reaction device is 10 to 30 mg/mL.
Preferably, in step (2), 5 to 10mL of the solvent is added to the reaction apparatus every 30 to 40 minutes during the heating and stirring to compensate for the solvent volatilized during the heating and stirring. The solvent is added at intervals during the heating and stirring process, so that the total amount of the solvent is controlled to not change by more than 10%, and the swelling degree of the porous silica is kept consistent.
Preferably, in step (2), the cooling is carried out to room temperature (e.g., 20 to 25 ℃).
Preferably, in the step (2), the rotation speed of the centrifugation is 2000-10000 rpm, and the centrifugation time is 2-10 minutes. Centrifuging to obtain supernatant and bottom precipitate with obvious separation. Centrifuging to obtain supernatant and bottom precipitate with obvious separation. This indicates that the quantum dots and the porous silica are fully compounded, and the quantum dots are not easy to dissolve out in a solvent environment. If the supernatant still has partial fluorescence after centrifugation, the quantum dots are probably not completely embedded into the pore diameter of the porous silica due to the mismatching of the size and the pore diameter, and the part can be discarded.
Preferably, in the step (2), washing is carried out after centrifugation for 1-5 times, and the solvent used for washing is the same as the solvent added in the step (2); preferably, the washing is 1-3 times.
Preferably, in the step (2), the drying is vacuum drying or heating drying.
Preferably, the vacuum degree of the vacuum drying is lower than-0.1 MPa, and the vacuum time is 2-6 hours.
Preferably, the heating and drying are carried out at the temperature of 70-120 ℃ for 2-6 hours.
The porous silicon dioxide composite material containing the quantum dots is applied to the field of semiconductors.
Preferably, the semiconductor field includes a display field and a lighting field.
A lighting device comprises the porous silica composite material containing quantum dots.
Preferably, the lighting device is an LED lamp bead or an LED lamp.
A preparation method of an LED lamp bead comprises the following steps:
(1) mixing the porous silicon dioxide composite material containing the quantum dots with organic silicon packaging glue, vacuumizing, and keeping the vacuum degree lower than-0.1 MPa to obtain fluorescent glue with uniform appearance;
(2) dripping the fluorescent glue prepared in the step (1) into a purple light or blue light LED chip bracket;
(3) vacuumizing the purple light or blue light LED chip containing the fluorescent glue obtained in the step (2), wherein the vacuum degree is kept lower than-0.1 MPa;
(4) and (4) baking the purple or blue LED chip containing the fluorescent glue obtained in the step (3) to obtain the LED lamp bead.
Compared with the prior art, the invention has the following beneficial effects:
(1) in the step (2) of the process for preparing the porous silicon dioxide composite material containing the quantum dots, the porous silicon dioxide is heated, the aperture of the porous silicon dioxide is expanded to a certain degree, so that the quantum dots can enter the pores of the porous silicon dioxide, and then the porous silicon dioxide is cooled, the aperture of the porous silicon dioxide can be shrunk and reduced, so that the quantum dots are firmly embedded in the pores of the porous silicon dioxide, and the stability of the composite material is improved.
(2) In the step (2) of the process for preparing the porous silica composite material containing the quantum dots, the concentration of the quantum dots and the concentration of the porous silica are selected, and the stirring speed is selected, so that the stability of the prepared porous silica composite material containing the quantum dots is further improved.
(3) Compared with the unmodified quantum dots, the luminescent intensity of the porous silicon dioxide composite material containing the quantum dots is basically consistent, so that the porous silicon dioxide composite material prepared by the method has good luminescent intensity.
(4) The porous silicon dioxide composite material containing the quantum dots is in direct contact with a blue light LED chip, so that the brightness of the prepared LED lamp bead is slowly attenuated, and the service life is long.
The quantum dots are mainly characterized by small particle size, large specific surface area and thus high activity. The higher activity results in the quantum dots being very susceptible to external conditions (e.g., water, oxygen, and heat), causing changes in surface state and structure, and thus, causing deterioration in the performance of the quantum dots (e.g., a decrease in fluorescence intensity or a change in peak half-width). The quantum dots are embedded into the porous silicon dioxide in a physical adsorption mode, and the porous silicon dioxide plays a role in directly protecting the quantum dots, so that external conditions cannot directly act on the quantum dots, and the influence of the external conditions on the material is further slowed down, and the stability is enhanced.
Drawings
FIG. 1 is a fluorescence spectrum of a porous silica composite containing quantum dots and CdSe @ ZnS quantum dots prepared in example 1 of the present invention;
FIG. 2 is a graph of the luminance of LED beads prepared in application example 1 and comparative example 1 of the present invention.
Detailed Description
In order to make the technical solutions of the present invention more apparent to those skilled in the art, the following examples are given for illustration. It should be noted that the following examples are not intended to limit the scope of the claimed invention.
Example 1
A preparation method of a porous silica composite material containing quantum dots comprises the following steps:
(1) mixing 0.2g of CdSe @ ZnS quantum dots and 2g of porous silica, placing the mixture in a three-neck flask, vacuumizing the three-neck flask until the vacuum degree in the three-neck flask is kept lower than-0.1 MPa, continuing the vacuumizing operation for 30 minutes, and then introducing nitrogen;
(2) adding 100mL of normal hexane into a three-neck flask, heating to 60 ℃, stirring at 600 rpm, adding 5mL of normal hexane every 30 minutes to compensate for the normal hexane evaporated and lost in the heating process, stopping heating after 2 hours, naturally cooling to normal temperature, centrifuging at a centrifugal rotation speed of 3000 rpm, centrifuging to obtain a precipitate, washing the precipitate obtained by centrifuging for 3 times by using the normal hexane, drying in a drying oven at 80 ℃, and thus obtaining the porous silica composite material containing the quantum dots, wherein the porous silica composite material containing the quantum dots is orange red fine powder.
The particle size of the porous silicon dioxide in the step (1) is 100-120 nm; the aperture of the porous silicon dioxide is 10-12 nm; the specific surface area of the porous silica is 600-800m2/g。
The particle size of the quantum dots in the step (1) is 10-12 nm.
Example 2
A preparation method of a porous silica composite material containing quantum dots comprises the following steps:
(1) mixing 0.2g of CdSe @ ZnS quantum dots, 0.2g of CdZnSeS quantum dots and 4g of porous silica, placing the mixture in a three-neck flask, vacuumizing the three-neck flask until the vacuum degree in the three-neck flask is kept lower than-0.1 MPa, continuing the vacuumizing operation for 60 minutes, and then introducing nitrogen;
(2) adding 200mL of n-octane into a three-neck flask, heating to 90 ℃, stirring at 1000 rpm, adding 5mL of n-octane every 30 minutes, compensating the n-octane evaporated and lost in the heating process, stopping heating after 3 hours, naturally cooling to normal temperature, centrifuging the obtained suspension at the centrifugal rotation speed of 5000 rpm, centrifuging to obtain a precipitate, washing the precipitate obtained by centrifuging for 3 times by using the n-octane, drying, and drying in an oven at 80 ℃ to obtain the porous silicon dioxide composite material containing the quantum dots, wherein the porous silicon dioxide composite material containing the quantum dots is light yellow powder.
The particle size of the porous silicon dioxide in the step (1) is 150-160 nm; the pore diameter of the porous silicon dioxide is 6-7 nm; the specific surface area of the porous silica is 400-500m2/g。
The particle size of the quantum dots in the step (1) is 7-8 nm.
Example 3
A preparation method of a porous silica composite material containing quantum dots comprises the following steps:
(1) 0.2g CsPbBr was added3Mixing the quantum dots and 4g of porous silicon dioxide, placing the mixture in a three-neck flask, vacuumizing the three-neck flask, keeping the vacuum degree in the three-neck flask to be lower than-0.1 MPa, continuing vacuumizing for 30 minutes, and then introducing nitrogen;
(2) adding 80mL of normal hexane into a three-neck flask, heating to 60 ℃, stirring at 600 rpm, adding 5mL of normal hexane every 30 minutes to compensate for the normal hexane evaporated and lost in the heating process, stopping heating after 2 hours, naturally cooling to normal temperature, centrifuging the obtained suspension at the centrifugal rotation speed of 4000 rpm, centrifuging the obtained precipitate, washing the precipitate obtained by centrifuging for 3 times by using the normal hexane, drying, and drying in a 60 ℃ oven to obtain the porous silica composite material containing the quantum dots, wherein the porous silica composite material containing the quantum dots is light green fine powder.
The particle size of the porous silicon dioxide in the step (1) is 180-200 nm; the pore diameter of the porous silicon dioxide is 14-16 nm; the specific surface area of the porous silica is 900-950m2/g。
The particle size of the quantum dots in the step (1) is 10-12 nm.
Example 4
In comparison with example 1, 0.8g of InP @ ZnS was used as the quantum dots in step (1) in example 4, 4g of porous silica was used, and toluene was used as the solvent in step (2), and the rest of the procedure was the same as in example 1.
Example 5
Compared with example 1, the quantum dots used in step (1) of example 5 were 0.6g of CdS @ ZnS, the porous silica used was 3g, the solvent used in step (2) was cyclohexane, and the rest of the procedure was the same as in example 1.
Example 6
Compared with example 1, the quantum dots used in step (1) of example 6 were 0.6g of CdS @ ZnS, the porous silica used was 3g, the solvent used in step (2) was chloroform, and the rest of the procedure was the same as in example 1.
Example 7
Compared with example 2, in example 7, the quantum dots used in step (1) were 0.7g of InGaP, the porous silica used was 3.5g, the solvent used in step (2) was benzene, the heating temperature in step (2) was 100 ℃, the stirring speed was 1400 rpm, and the rest of the procedure was the same as in example 2.
Example 8
Compared with example 2, the quantum dot used in step (1) in example 8 is 0.65g of CuInS2The porous silica used was 3.5g, the solvent used in step (2) was cyclohexane, the heating temperature in step (2) was 70 ℃ and the stirring speed was 1500 rpm, and the rest of the procedure was the same as in example 2.
Application example 1
A preparation method of an LED lamp bead comprises the following steps:
(1) mixing the porous silicon dioxide composite material containing quantum dots prepared in the embodiment 1 with organic silicon packaging glue, and then vacuumizing, wherein the vacuum degree is kept lower than-0.1 MPa, and vacuumizing operation lasts for 30 minutes to obtain fluorescent glue with uniform appearance;
(2) dripping the fluorescent glue prepared in the step (1) into a blue light LED chip bracket;
(3) vacuumizing the blue LED chip containing the fluorescent glue obtained in the step (2), wherein the vacuum degree is kept lower than-0.1 MPa, and the vacuumizing operation lasts for 1.5 hours;
(4) and (4) baking the blue LED chip containing the fluorescent glue obtained in the step (3) at the baking temperature of 100 ℃ for 3 hours to obtain the LED lamp bead.
Application example 2
In comparison with application example 1, the porous silica composite containing quantum dots prepared in example 2 was used in step (1) of application example 2, and the rest of the procedure was the same as in application example 1.
Application example 3
A preparation method of an LED lamp bead comprises the following steps:
(1) mixing the porous silicon dioxide composite material containing quantum dots prepared in the embodiment 3 with organic silicon packaging glue, and then vacuumizing, wherein the vacuum degree is kept lower than 0.1MPa, and vacuumizing operation lasts for 30 minutes to obtain fluorescent glue with uniform appearance;
(2) dripping the fluorescent glue prepared in the step (1) into a purple light or blue light LED chip bracket;
(3) vacuumizing the purple light or blue light LED chip containing the fluorescent glue obtained in the step (2), wherein the vacuum degree is kept lower than-0.1 MPa, and the vacuumizing operation lasts for 1.5 hours;
(4) and (4) placing the purple light or blue light LED chip containing the fluorescent glue obtained in the step (3) in a 365nm ultraviolet light irradiation environment for photocuring treatment, wherein the illumination time is 2 hours, so that the LED lamp bead is obtained, and the LED lamp bead can stably emit green light.
Comparative example 1
Compared with application example 1, CdSe @ ZnS is used in the step (1) of the comparative example 1 to replace the porous silica composite material containing quantum dots prepared in the example 1, and the rest of the process is the same as that of the application example 1, so that the LED lamp bead is prepared.
Product effectiveness testing
The fluorescence spectra of the porous silica composite containing quantum dots prepared in example 1 and CdSe @ ZnS quantum dots were measured using a HORIBA FluroMax4 fluorescence spectrometer, and the results are shown in fig. 1. FIG. 1 is a fluorescence spectrum of a porous silica composite containing quantum dots and CdSe @ ZnS quantum dots prepared in example 1 of the present invention; as can be seen from fig. 1, the fluorescence spectra of the porous silica composite containing quantum dots prepared in example 1 and the unmodified CdSe @ ZnS quantum dots are substantially consistent, which indicates that the luminescent effect of the porous silica composite containing quantum dots prepared in example 1 is not significantly deteriorated. It is considered that the quantum dots are modified (surface or structure affected) by some processing means, and the quantum dots are greatly deteriorated in light efficiency, and the direct expression from the spectrum is a decrease in fluorescence intensity. One of the advantages of the scheme of embodiment 1 of the present invention is that the whole reaction does not involve a chemical reaction, and does not affect the surface or structure of the quantum dot, thereby keeping the fluorescence stability thereof substantially unaffected. Therefore, as can be seen from the spectrum, the intensity of the spectrum after recombination can still be ensured to be at a basically equivalent level compared with the original quantum dots.
In addition, the light-emitting brightness of the LED lamp beads prepared in application example 1 and comparative example 1 were tested under the same conditions, and the results are shown in fig. 2. FIG. 2 is a graph of the luminance of LED beads prepared in application example 1 and comparative example 1 of the present invention. As can be seen from FIG. 2, as time goes on, the luminance of the LED lamp bead prepared in application example 1 decays slowly, and the luminance of the LED lamp bead prepared in comparative example 1 decays quickly, which indicates that the porous silica composite material containing quantum dots prepared in example 1 has good stability in direct contact with a blue LED chip, and the LED lamp bead prepared in application example 1 can be predicted to have a relatively long luminance life.

Claims (10)

1. The porous silica composite material containing the quantum dots is characterized in that the quantum dots enter pores of the porous silica in a solution swelling mode, and after a solvent is removed, the pores of the porous silica shrink, so that the quantum dots are embedded in the pores of the porous silica, and the porous silica composite material containing the quantum dots is formed.
2. The porous silica composite according to claim 1, wherein the pore size of the porous silica is 5 to 15 nm.
3. The porous silica composite according to claim 1, wherein the quantum dot is at least one quantum dot of groups II-VI or III-V of the periodic Table, and the particle size of the quantum dot is 3 to 15 nm.
4. The porous silica composite according to claim 1, wherein the pore size of the porous silica is different from the particle size of the quantum dot by 0 to 10%.
5. A preparation method of a porous silica composite material is characterized by comprising the following steps:
(1) mixing the quantum dots and the porous silicon dioxide, placing the mixture in a reaction device, vacuumizing the reaction device, and then introducing inert gas;
(2) and adding a solvent into the reaction device, heating and stirring, cooling, centrifuging, and drying to obtain the porous silicon dioxide composite material.
6. The method according to claim 5, wherein in the step (2), the solvent is at least one of toluene, xylene, n-hexane, n-octane, cyclohexane, chloroform, benzene, carbon tetrachloride or carbon disulfide.
7. The method as claimed in claim 5, wherein the stirring speed in step (2) is 400-1500 rpm.
8. The preparation method according to claim 5, wherein in the step (2), the concentration of the quantum dots in the reaction device in the solvent is 1-10 mg/mL; in the step (2), the concentration of the porous silica in the solvent in the reaction device is 5-50 mg/mL.
9. Use of the porous silica composite according to any one of claims 1 to 4 in the field of semiconductors.
10. An illumination device comprising the quantum dot-containing porous silica composite material according to any one of claims 1 to 4.
CN201911239851.0A 2019-12-06 2019-12-06 Porous silicon dioxide composite material containing quantum dots and preparation method and application thereof Pending CN110922962A (en)

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CN114410305A (en) * 2022-01-13 2022-04-29 深圳市华星光电半导体显示技术有限公司 Composite material film, preparation method thereof and display panel
CN117535970A (en) * 2024-01-08 2024-02-09 淄博鑫柏源纺织有限公司 Antibacterial wear-resistant textile material and preparation method thereof

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CN105733556A (en) * 2016-03-21 2016-07-06 天津市中环量子科技有限公司 Quantum-dot composite fluorescent particles and LED module

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Publication number Priority date Publication date Assignee Title
CN114410305A (en) * 2022-01-13 2022-04-29 深圳市华星光电半导体显示技术有限公司 Composite material film, preparation method thereof and display panel
CN117535970A (en) * 2024-01-08 2024-02-09 淄博鑫柏源纺织有限公司 Antibacterial wear-resistant textile material and preparation method thereof
CN117535970B (en) * 2024-01-08 2024-04-02 淄博鑫柏源纺织有限公司 Antibacterial wear-resistant textile material and preparation method thereof

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