CN110911070A - Thermistor added with titanium oxide and preparation method thereof - Google Patents

Thermistor added with titanium oxide and preparation method thereof Download PDF

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Publication number
CN110911070A
CN110911070A CN201911227575.6A CN201911227575A CN110911070A CN 110911070 A CN110911070 A CN 110911070A CN 201911227575 A CN201911227575 A CN 201911227575A CN 110911070 A CN110911070 A CN 110911070A
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Prior art keywords
thermistor
film
titanium oxide
added
thickness
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刘刚
王梅凤
薛云峰
唐敏
高进
王成
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JURONGSHI BOYUAN ELECTRONICS CO Ltd
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JURONGSHI BOYUAN ELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention discloses a thermistor added with titanium oxide and a preparation method thereof, wherein the thermistor comprises 10-25 wt% of Mn2O330% -45% of Co2O315 to 25 percent of Ni2O315% -30% of Fe2O30.1 to 3.0 percent of TiO2. Mixing the raw materials to obtain a powder mixture, adding ethanol, an adhesive and a dispersing agent, and uniformly mixing to prepare slurry; placing the ceramic sheets in a vacuum box, absorbing water on the slurry by using a guide pipe to carry a film with the thickness of 20-70 mu m, circularly conveying the film, drying each layer by using an oven, circularly manufacturing the film until the designed layer number and thickness are reached, and separating, cutting, removing glue and sintering the dried film to obtain ceramic sheets; coating silver electrodes on two surfaces of the sintered ceramic chip; dimensioned according to resistance requirements, i.e.And (5) obtaining the product. The thermistor prepared by the invention has good linearity, the B value can be 3700-3900K, the resistivity is 200-400 (K omega. mm), and the thermistor can be used in a wide temperature range; the resistivity and the B value are moderate, so that the temperature compensation can be used as temperature compensation in a wide range, the use of special customers can be met, and the stability is strong.

Description

Thermistor added with titanium oxide and preparation method thereof
Technical Field
The invention relates to a thermistor, in particular to a thermistor added with titanium oxide and a preparation method thereof.
Background
NTC (Negative Temperature Coefficient) thermistors are generally sintered from transition metal oxide powders, which have a large number of systems and formulations for their components and contents.
The material property constant B of the thermistor is influenced by the formula of the metal oxide powder and is related to the resistivity of the thermistor. In the prior art, the manganese, cobalt, nickel and iron quaternary system formula has the advantages that before special additives are not added, if the B value is 3700-3900K, the resistivity can only be 10-50 (K omega. mm), and the resistivity is small, the temperature measurement range is narrow, and the requirements of special customers cannot be met.
Disclosure of Invention
The invention aims to solve the technical problem of the prior art and provides a thermistor with strong stability, a B value of 3700-3900K and a resistivity of 200-400 (K omega. mm) and a preparation method thereof.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a thermistor added with titanium oxide comprises the following components in percentage by weight:
Figure BDA0002302670780000011
preferably, the thermistor added with titanium oxide comprises the following components in percentage by weight:
Figure BDA0002302670780000012
more preferably, the thermistor added with titanium oxide comprises the following components in percentage by weight:
Figure BDA0002302670780000021
further preferably, the thermistor added with titanium oxide comprises the following components in percentage by weight:
Figure BDA0002302670780000022
most preferably, the thermistor added with titanium oxide comprises the following components in percentage by weight:
Figure BDA0002302670780000023
the invention further provides a preparation method of the thermistor added with the titanium oxide, which comprises the following steps:
(1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 30-50% by mass of ethanol, 50-70% by mass of a binder and 5-10% by mass of a dispersant into the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 microns, circularly conveying the film in an annular manner, drying each layer by using an oven, circularly manufacturing the film to the designed layer number and thickness, and separating, cutting, discharging glue and sintering the dried film to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
Preferably, in step (1), the binder is CK 24.
The dispersant is BYK 110.
Preferably, in the step (2), the drying temperature is 30-60 ℃.
Has the advantages that:
the thermistor prepared by the invention has good linearity, is very convenient to be applied to the temperature measurement industry, has a B value of 3700-3900K and a resistivity of 200-400 (K omega. mm), and can be used in a wide temperature range; the resistivity and the B value are moderate, so that the temperature compensation can be used as temperature compensation in a wide range, the use of special customers can be met, and the stability is strong.
Detailed Description
The invention will be better understood from the following examples.
Example 1
The thermistor of this example has the following formulation:
Figure BDA0002302670780000031
the preparation method comprises the following steps: (1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 30% of ethanol, 70% of a binder (CK24) and 5% of a dispersant (BYK110) by mass of the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 mu m, circularly conveying and drying each layer at 30-60 ℃ by using an oven, circularly manufacturing to the designed layer number and thickness, and separating, cutting, discharging glue and sintering after drying to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
Example 2
The thermistor of this example has the following formulation:
Figure BDA0002302670780000032
Figure BDA0002302670780000041
the preparation method comprises the following steps:(1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 40% of ethanol, 60% of adhesive (CK24) and 10% of dispersant (BYK110) by mass of the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 mu m, circularly conveying and drying each layer at 30-60 ℃ by using an oven, circularly manufacturing to the designed layer number and thickness, and separating, cutting, discharging glue and sintering after drying to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
Example 3
The thermistor of this example has the following formulation:
Figure BDA0002302670780000042
the preparation method comprises the following steps: (1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 50% of ethanol, 50% of adhesive (CK24) and 8% of dispersant (BYK110) by mass of the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 mu m, circularly conveying and drying each layer at 30-60 ℃ by using an oven, circularly manufacturing to the designed layer number and thickness, and separating, cutting, discharging glue and sintering after drying to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
Example 4
The thermistor of this example has the following formulation:
Figure BDA0002302670780000051
the preparation method comprises the following steps: (1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 50% of ethanol, 50% of adhesive (CK24) and 8% of dispersant (BYK110) by mass of the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 mu m, circularly conveying and drying each layer at 30-60 ℃ by using an oven, circularly manufacturing to the designed layer number and thickness, and separating, cutting, discharging glue and sintering after drying to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
Example 5
The thermistor of this example has the following formulation:
Figure BDA0002302670780000052
the preparation method comprises the following steps: (1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 50% of ethanol, 50% of adhesive (CK24) and 8% of dispersant (BYK110) by mass of the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 mu m, circularly conveying and drying each layer at 30-60 ℃ by using an oven, circularly manufacturing to the designed layer number and thickness, and separating, cutting, discharging glue and sintering after drying to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
Example 6
The thermistor of this example has the following formulation:
Figure BDA0002302670780000061
the preparation method comprises the following steps: (1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 50% of ethanol, 50% of adhesive (CK24) and 8% of dispersant (BYK110) by mass of the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 mu m, circularly conveying and drying each layer at 30-60 ℃ by using an oven, circularly manufacturing to the designed layer number and thickness, and separating, cutting, discharging glue and sintering after drying to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
The thermistors prepared in the above examples were examined as follows to obtain the resistivity and B value of the thermistors, and the results are shown in Table 1.
The detection method comprises the following steps: resistivity algorithm: rho-RS/T
In the formula: r: the resistance value of the NTC chip measured at the temperature of 25 ℃ (the test precision is +/-0.02℃)
S: area of NTC chip: length x width
T: thickness of NTC chip
B value algorithm: b ═ T1 × T2/(T2-T1)) × ㏑ (R1/R2)
Resistance value at temperature T1 when R1 is equal to
Resistance value at temperature T2 when R2 is equal to
T1＝298.15K(273.15+25℃)
T2＝323.15K(273.15+50℃)
TABLE 1
Examples Resistivity (k omega. mm) B value (K)
Example 1 205 3705
Example 2 213 3713
Example 3 224 3721
Example 4 268 3733
Example 5 320 3756
Example 6 396 3795
As can be seen from the data in the table, the thermistor B value obtained by the preparation method can be 3700-3900K, the resistivity is 200-400 (K omega. mm), and the thermistor can be used in a wider temperature range; the resistivity and the B value are moderate, so that the temperature compensation can be used as temperature compensation in a wide range, the use of special customers can be met, and the stability is strong.
The present invention provides a thermistor with titanium oxide added and a method for manufacturing the same, and a plurality of methods and ways for implementing the technical scheme, and the above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.

Claims (9)

1. A thermistor added with titanium oxide is characterized by comprising the following components in percentage by weight:
Figure FDA0002302670770000011
2. the titanium oxide-added thermistor according to claim 1, characterized by comprising the following components in percentage by weight:
Figure FDA0002302670770000012
3. the titanium oxide-added thermistor according to claim 1, characterized by comprising the following components in percentage by weight:
Figure FDA0002302670770000013
4. the titanium oxide-added thermistor according to claim 1, characterized by comprising the following components in percentage by weight:
Figure FDA0002302670770000014
5. the titanium oxide-added thermistor according to claim 1, characterized by comprising the following components in percentage by weight:
Figure FDA0002302670770000021
6. the method of manufacturing a thermistor with added titanium oxide according to claim 1, comprising the steps of:
(1) adding Mn2O3、Co2O3、Ni2O3、Fe2O3、TiO2Mixing to obtain a powder mixture, adding 30-50% by mass of ethanol, 50-70% by mass of a binder and 5-10% by mass of a dispersant into the powder mixture, and uniformly mixing to prepare slurry;
(2) placing the slurry obtained in the step (1) in a vacuum box, absorbing water on a carrier film by using a guide pipe to obtain a film with the thickness of 20-70 microns, circularly conveying the film in an annular manner, drying each layer by using an oven, circularly manufacturing the film to the designed layer number and thickness, and separating, cutting, discharging glue and sintering the dried film to obtain a ceramic chip;
(3) coating silver electrodes on two surfaces of the sintered ceramic chip;
(4) and (5) drawing into the required size according to the resistance value requirement to obtain the product.
7. The method according to claim 6, wherein in the step (1), the binder is CK 24.
8. The method according to claim 6, wherein in the step (1), the dispersant is BYK 110.
9. The preparation method according to claim 6, wherein in the step (2), the drying temperature is 30-60 ℃.
CN201911227575.6A 2019-12-04 2019-12-04 Thermistor added with titanium oxide and preparation method thereof Pending CN110911070A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143907A (en) * 1999-08-30 2001-05-25 Nippon Soken Inc Thermistor element
CN101601105A (en) * 2006-09-29 2009-12-09 株式会社村田制作所 The NTC thermistor is with pottery and use its NTC thermistor
CN104051095A (en) * 2014-06-30 2014-09-17 句容市博远电子有限公司 Four-component system thermistor material with titanium oxide
CN107793153A (en) * 2017-11-20 2018-03-13 首凯汽车零部件（江苏）有限公司 A kind of compound thermistor material and its preparation method and application

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143907A (en) * 1999-08-30 2001-05-25 Nippon Soken Inc Thermistor element
CN101601105A (en) * 2006-09-29 2009-12-09 株式会社村田制作所 The NTC thermistor is with pottery and use its NTC thermistor
CN104051095A (en) * 2014-06-30 2014-09-17 句容市博远电子有限公司 Four-component system thermistor material with titanium oxide
CN107793153A (en) * 2017-11-20 2018-03-13 首凯汽车零部件（江苏）有限公司 A kind of compound thermistor material and its preparation method and application

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