CN110895253A - High-efficient high-resolution's reflection of light electron energy spectrum realizes device - Google Patents
High-efficient high-resolution's reflection of light electron energy spectrum realizes device Download PDFInfo
- Publication number
- CN110895253A CN110895253A CN201911345465.XA CN201911345465A CN110895253A CN 110895253 A CN110895253 A CN 110895253A CN 201911345465 A CN201911345465 A CN 201911345465A CN 110895253 A CN110895253 A CN 110895253A
- Authority
- CN
- China
- Prior art keywords
- film layer
- resolution
- photon
- energy spectrum
- efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
Abstract
The invention provides a high-efficiency high-resolution reflection electronic energy spectrum implementation device, which is characterized in that: the device comprises a vacuum cavity, a vacuum air exhaust device, an electron generation and emission device, a sample fixing device, a photon collection and transmission device and a high-resolution grating spectrum analysis instrument; one end of the electron generation and emission device is inserted into the vacuum cavity; the vacuum pumping device is connected with the vacuum cavity; one end of the sample fixing device is arranged in the vacuum cavity; the high resolution grating spectral analysis instrument is disposed on the photon collection and transmission device. A high-efficiency high-resolution reflection electronic energy spectrum realizing device is characterized in that a high-resolution grating spectrum analyzer is replaced by a deep ultraviolet narrow-band filter and a photon energy detector; and the deep ultraviolet narrow-band filter is connected with the photon energy detector. The invention has the beneficial effects that: the photon generated by the reflection electronic effect can be collected more efficiently, and the resolution of the system is effectively improved.
Description
Technical Field
The invention relates to the field of material physical spectrum analysis instruments, in particular to a high-efficiency high-resolution reflection electronic spectrum implementation device.
Background
The electronic structure of the material directly determines the physical properties of the material, such as thermal property, optical property, electric transport property and the like, is a key research object of disciplines of material science, condensed state physics and the like, is also important for material application, and particularly, the performance of a large number of electronic devices is closely related to the conduction band and the valence band structure of the material. Therefore, the electronic structure of the material is very important to be accurately measured, and the proper material can greatly improve the performance of an electronic device and widen the application range of the instrument.
Photoelectron spectroscopy is a widely used means of accurately measuring the electronic structure of materials, and has been a result of attention. The method is a technology for measuring the kinetic energy, photoelectron intensity and electronic angle distribution of photoelectrons beaten from a sample by monochromatic light radiation by utilizing the principle of photoelectric effect, and researching the electronic structure of atoms, molecules and condensed phases, especially the solid surface by using the information. Much work has been focused on the use of X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy for studying valence band electron band structures, work function information, and the like. However, since electrons of the material are generally in a valence band, the energy level structure of a conduction band cannot be directly researched by a photoelectron spectrum, and the energy level structure information of the conduction band is crucial to the performance of the whole electronic device, so that a mode for directly measuring the conduction band structure in real time is urgently needed.
The reflection electron spectroscopy technology can make up the defects of photoelectron spectroscopy and can be directly used for measuring the electronic structure of a material conduction band. The basic physical process of the reflection electron energy spectrum is opposite to the photoelectric effect, and free electrons with specific kinetic energy enter the surface of the material, are compounded into the energy level of a conduction band of the material, and then are transited downwards into the energy level of another conduction band. The transition process simultaneously satisfies the principles of dipole transition, energy conservation and momentum conservation, so that the electronic structure of the conduction band unoccupied by the solid can be obtained by measuring the photon spectrum excited by the electrons.
According to different test methods of reflection electron emission, reflection electron energy spectra are mainly divided into angle-resolved reflection electron energy spectra, spin-resolved reflection electron energy spectra, and the like. The angle-resolved reflection electron energy spectrum is characterized in that an energy band dispersion relation curve of a material is determined by changing an included angle between an incident electron beam and a sample normal; the spin-resolved reflection electron energy spectrum polarizes the incident electrons and can directly measure the spin information of holes in the conduction band electron energy level. According to the type of the photon detector, two working modes can be divided: spectroscopic spectroscopy and monochromatic measurement modes. The spectral spectroscopy fixes the kinetic energy of incident electrons, and performs energy spectrum analysis on the emitted photons through a grating, and then performs photon counting by using an electron multiplier tube; the monochromatic measurement mode changes the kinetic energy of incident electrons, and an ultraviolet photon Geiger detector with a narrow energy bandwidth is used for measuring photons excited by the electrons.
Taking the research and development of an organic solar cell as an example, the interface level structure of the heterojunction is comprehensively and accurately known, and the interface level of organic molecules and inorganic electrode materials can be adjusted, so that the transmission of carriers and the transport process at an electrode interface are optimized, the electron-hole separation process in the photovoltaic effect is optimized, and the energy conversion efficiency is greatly improved. The reflection electron energy spectrum is an effective means for researching the conduction band energy level structure.
However, the effective cross section of the reflective electronic energy spectrum is far smaller than that of the photoelectric energy spectrum, and the development and application of the reflective electronic energy spectrum are difficult and far behind the photoelectric energy spectrum. For example, in the energy section of vacuum ultraviolet light, the effective section of the reflecting electron spectrum is nearly 10 of the photoelectron spectrum-5The signal is relatively weak and difficult to detect. Therefore, the energy resolution of the commercial reflective electron spectrometer is generally larger than 0.5eV, the resolution achieved in the foreign laboratory is still higher than 0.12eV, and the change of the conduction band electron structure of 0.1eV can cause the difference of the energy transmission efficiency magnitude.
Therefore, a reflective electron spectrum implementation device capable of collecting photons generated by reflective electron effect more efficiently and effectively improving the resolution of the system is urgently needed in the market.
Disclosure of Invention
In order to solve the technical problems, the invention discloses a high-efficiency high-resolution reflection electronic energy spectrum implementation device, and the technical scheme of the invention is implemented as follows:
a high-efficient high-resolution reflection of light electron energy spectrum realizes device which characterized in that: the device comprises a vacuum cavity, a vacuum air exhaust device, an electron generation and emission device, a sample fixing device, a photon collection and transmission device and a high-resolution grating spectrum analysis instrument; one end of the electron generation and emission device is inserted into the vacuum cavity; the vacuum pumping device is connected with the vacuum cavity; one end of the sample fixing device is arranged in the vacuum cavity; the high resolution grating spectral analysis instrument is disposed on the photon collection and transmission device.
Preferably, the photon collection and transmission device is elliptical; the inner surface of the photon collection and transmission device is polished.
Preferably, the material of the photon collection and transmission device is selected from one of gold, silver and copper.
Preferably, the photon collection and transmission device has a major axis of 200-700mm and a minor axis of 4-20 mm.
Preferably, the device further comprises a length adjusting device and an angle adjusting device; the length adjusting device and the angle adjusting device are positioned at the connection part of the high-resolution grating spectrum analyzer and the photon collecting and transmitting device; one end of the angle adjusting device is fixed on the photon collecting and transmitting device, and the other end of the angle adjusting device is fixed on one end of the length adjusting device; the other end of the length adjusting device is fixed on the high-resolution grating spectrum analyzer.
Preferably, the high-resolution grating spectral analysis instrument is replaced by a deep ultraviolet narrow-band filter and a photon energy detector; and the deep ultraviolet narrow-band filter is connected with the photon energy detector.
Preferably, the deep ultraviolet narrow band filter comprises an upper reflecting film system and a lower reflecting film system; the lower reflecting film system comprises a substrate, a next film layer and a next second film layer; the next film layer and the second film layer are alternately plated on the substrate; the number of the next film layer and the second film layer is 20-25 in total; the upper reflecting film system comprises a resonant cavity layer, an upper film layer and an upper second film layer; the upper film layer and the film layer are alternately plated above the resonant cavity layer; the number of the film layers and the film layers of the previous type is 20-25 in total; the thickness of the upper film layer and the lower film layer is one fourth of the quotient obtained by dividing the required wavelength by the refractive index of the materials of the upper film layer and the lower film layer at the wavelength; the thicknesses of the upper second type film layer and the lower second type film layer are one fourth of the quotient obtained by dividing the required wavelength by the refractive indexes of the materials of the upper first type film layer and the lower second type film layer at the wavelength.
Preferably, the material of the substrate and the resonant cavity layer is magnesium fluoride.
Preferably, the upper film layer and the lower film layer are magnesium fluoride; the upper two kinds of film layers and the lower two kinds of film layers are calcium fluoride.
Preferably, the structure of the photon energy detector is selected from one of a geiger-miller counter tube and a photomultiplier tube.
By implementing the technical scheme of the invention, the technical problems of low efficiency of photons generated by collecting the reflection electronic effect and insufficient system resolution in the prior art can be solved; by implementing the technical scheme of the invention, photons generated by the reflection electronic effect can be collected more efficiently, and the technical effect of effectively improving the resolution of the system is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only one embodiment of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a spectral state diagram of a high-efficiency high-resolution reflection electronic energy spectrum implementation device;
FIG. 2 is a state diagram of a monochromatic measurement mode of a high-efficiency high-resolution reflective electronic energy spectrum implementation device;
FIG. 3 is an enlarged view of a deep ultraviolet narrow-band filter of a high-efficiency high-resolution reflective electronic spectrum implementation device;
FIG. 4 is a transmission curve of a deep ultraviolet narrow-band filter of a high-efficiency high-resolution reflective electronic spectrum implementation device;
FIG. 5 is a state diagram of a device for removing length adjustment of a reflective electron spectroscopy implementation device with high efficiency and high resolution;
fig. 6 is a state diagram of a removal length adjusting device and an angle adjusting device of a high-efficiency high-resolution reflection electronic energy spectrum implementation device.
In the above drawings, the reference numerals denote:
1-a vacuum cavity, 2-a vacuum air extractor, 3-an electron generation and emission device, 4-a sample fixing device, 5-a photon collection and transmission device, 6-a length adjusting device, 7-an angle adjusting device, 8-a high-resolution grating spectrum analyzer, 9-a deep ultraviolet narrow band filter, 10-a photon energy detector, 11-an upper reflecting film system, 12-a resonant cavity layer, 13-a lower reflecting film system and 14-a substrate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In a specific embodiment, as shown in fig. 1-6, a high-efficiency and high-resolution reflective electronic spectrum implementation apparatus is characterized in that: the device comprises a vacuum cavity 1, a vacuum air extractor 2, an electron generation and emission device 3, a sample fixing device 4, a photon collecting and transmitting device 5 and a high-resolution grating spectrum analyzer 8; one end of the electron generating and emitting device 3 is inserted into the vacuum cavity 1; the vacuum pumping device 2 is connected with the vacuum cavity 1; one end of the sample fixing device 4 is arranged in the vacuum cavity 1; the high resolution grating spectroscopic analyzer 8 is disposed on the photon collection and transmission device 5.
In the specific embodiment, when the device is used, a target sample is placed on a sample fixing device 4, then the sample fixing device 4 is installed inside a vacuum cavity 1, then the vacuum cavity 1 is pumped by a vacuum pumping device 2 to a vacuum state of more than 1e-6mbar, then an electron generation and emission device 3 is used, free electron beams are irradiated on the surface of the target sample, photons generated on the sample are collected by a photon collection and transmission device 5, and finally the collected photons are subjected to light splitting and detection by a high-resolution grating spectrum analysis instrument 8, so that the frequency and energy distribution of the photons are accurately obtained, and finally the design target of the electronic structure energy level of the sample is obtained; through the interaction among the modules, photons generated by the reflection electronic effect can be collected more efficiently, and the resolution of the photon collection process is effectively improved.
In a preferred embodiment, as shown in fig. 1-6, the photon collection and transmission device 5 is elliptical; the inner surface of the photon collection and transmission device 5 is polished.
In such a preferred embodiment, the elliptical shape of the device allows photons passing through one focal point of the ellipse to reach another focal point after reflection from the inner wall, thereby greatly improving the efficiency of photon transmission over long distances; the polishing process smoothes the inner surface as much as possible to improve controllability of the direction of photon movement.
In a preferred embodiment, as shown in fig. 1-6, the material of the photon collection and transmission device 5 is selected from one of gold, silver and copper.
In the preferred embodiment, the material of the photon collection and transmission device 5 is selected according to the reflectivity of the selected photon frequency, and is typically gold, silver, copper, or other material with high reflectivity.
In a preferred embodiment, as shown in FIGS. 1-6, the photon collection and transmission device 5 has a major axis of 200-700mm and a minor axis of 4-20 mm.
In the preferred embodiment, the combination of the long axis and the short axis is selected according to the actual requirement to meet the corresponding requirement.
In a preferred embodiment, as shown in fig. 1-6, further comprises a length adjustment device 6 and an angle adjustment device 7; the length adjusting device 6 and the angle adjusting device 7 are positioned at the joint of the high-resolution grating spectrum analysis instrument 8 and the photon collecting and transmitting device 5; one end of the angle adjusting device 7 is fixed on the photon collecting and transmitting device 5, and the other end of the angle adjusting device 7 is fixed on one end of the length adjusting device 6; the other end of the length adjusting device 6 is fixed on the high-resolution grating spectrum analyzer 8.
In this preferred embodiment, the photons are transmitted via a length adjustment device 6 and an angle adjustment device 7 into a high-resolution grating spectroscopic analyzer 8; the length adjustment means 6 and the angle adjustment means 7 further improve the collection efficiency for photons by changing the length and angle to achieve a distance and angle between the photon collection and transmission means 5 and the sample.
In a specific embodiment, as shown in fig. 1-6, the high resolution grating spectrometer 8 is replaced by a deep ultraviolet narrow band filter 9 and a photon energy detector 10; the deep ultraviolet narrow-band filter 9 is connected with the photon energy detector 10.
In this specific embodiment, the function is monochromatic measurement, the deep ultraviolet narrow band filter 9 is used to decompose photons, so that photons with specific wavelengths are transmitted, but photons with other wavelengths cannot pass through, and the overall bandwidth of the deep ultraviolet narrow band filter 9 is less than or equal to 50 meV; the photons filtered by the deep ultraviolet narrow band filter 9 enter the photon energy detector 10, and then the photons are analyzed by the photon energy detector 10 to obtain a corresponding result, so that the photons generated by the reflection electron effect can be collected more efficiently according to the transmission curve of fig. 4, and the resolution of the photon collection process is effectively improved.
In a preferred embodiment, as shown in fig. 1-6, the deep ultraviolet narrow band filter 9 comprises an upper reflective film series 11 and a lower reflective film series 13; the lower reflecting film system 13 comprises a substrate 14, a next film layer and a next second film layer; the next-type film layer and the next-type film layer are alternately plated over the substrate 14; the number of the next film layer and the second film layer is 20-25 in total; the upper reflecting film system 11 comprises a resonant cavity layer 12, an upper film layer and an upper second film layer; the upper film layer and the film layer are alternately plated above the resonant cavity layer 12; the number of the film layers and the film layers of the previous type is 20-25 in total.
In the preferred embodiment, the substrate 14, the resonant cavity layer 12, the first-type film layer, the second-type film layer and the second-type film layer are deposited by a vacuum coating method; the next film layer and the previous film layer belong to film layers with high refractive indexes, and the second film layer and the previous film layer belong to film layers with low refractive indexes, so that the variation of spectrum drift generated by photons with different incidence angles incident on the deep ultraviolet narrow-band filter 9 can be reduced by the arrangement mode, the transmission efficiency of the photons is improved, and the transmission efficiency of the photons is optimal when the number of the general layers is between 20 and 25; after passing through the lower reflective film, the power of the photons is attenuated to a certain extent, and then passes through the resonant cavity layer 12, and the power is enhanced by the resonant cavity layer 12, so that the recognition efficiency of the photon energy detector 10 is enhanced.
In a preferred embodiment, as shown in fig. 1-6, the thicknesses of the upper layer and the lower layer are one quarter of the quotient of the desired wavelength divided by the refractive indices of the materials of the upper layer and the lower layer at the wavelength; the thicknesses of the upper second type film layer and the lower second type film layer are one fourth of the quotient obtained by dividing the required wavelength by the refractive indexes of the materials of the upper first type film layer and the lower second type film layer at the wavelength.
In the preferred embodiment, the high refractive index film layer and the low refractive index film layer are formed by deposition through a vacuum coating method, the incident light has the same phase change in reflection at the upper and lower interfaces of the film layer, if the optical thickness of the film layer is equal to one fourth of the wavelength of the incident light, the phase difference between two adjacent reflected lights is exactly 2, the superposition result of all the reflected lights can realize reflection cancellation, thereby forming transmission enhancement, so that the thickness of the upper film layer and the lower film layer is one fourth of the quotient obtained by dividing the required wavelength by the refractive index of the materials of the upper film layer and the lower film layer at the wavelength, thereby enhancing the effect of the penetration.
In a preferred embodiment, as shown in fig. 1-6, the material of the substrate 14 and the resonant cavity layer 12 is magnesium fluoride; the upper film layer and the lower film layer are magnesium fluoride; the upper two kinds of film layers and the lower two kinds of film layers are calcium fluoride.
In the preferred embodiment, the extinction coefficients of calcium fluoride and magnesium fluoride in the ultraviolet band enable the magnesium fluoride and the calcium fluoride to be used as optical film materials in the deep ultraviolet band, and the refractive index of the calcium fluoride is higher than that of the magnesium fluoride, so that the calcium fluoride and the calcium fluoride are respectively used as products of a high refractive index layer and a low refractive index layer.
In a preferred embodiment, as shown in fig. 1-6, the photon energy detector 10 has a structure selected from the group consisting of geiger-miller counter tubes and photomultiplier tubes.
It should be understood that the above-described embodiments are merely exemplary of the present invention, and are not intended to limit the present invention, and that any modification, equivalent replacement, or improvement made without departing from the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (10)
1. A high-efficient high-resolution reflection of light electron energy spectrum realizes device which characterized in that: the device comprises a vacuum cavity, a vacuum air exhaust device, an electron generation and emission device, a sample fixing device, a photon collection and transmission device and a high-resolution grating spectrum analysis instrument;
one end of the electron generation and emission device is inserted into the vacuum cavity;
the vacuum pumping device is connected with the vacuum cavity;
one end of the sample fixing device is arranged in the vacuum cavity; the high resolution grating spectral analysis instrument is disposed on the photon collection and transmission device.
2. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 1, wherein: the photon collection and transmission device is elliptical; the inner surface of the photon collection and transmission device is polished.
3. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 2, wherein: the material of the photon collection and transmission device is selected from one of gold, silver and copper.
4. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 3, wherein: the long axis of the photon collecting and transmitting device is 200-700mm, and the length of the short axis is 4-20 mm.
5. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 1, wherein: the device also comprises a length adjusting device and an angle adjusting device; the length adjusting device and the angle adjusting device are positioned at the connection part of the high-resolution grating spectrum analyzer and the photon collecting and transmitting device; one end of the angle adjusting device is fixed on the photon collecting and transmitting device, and the other end of the angle adjusting device is fixed on one end of the length adjusting device; the other end of the length adjusting device is fixed on the vacuum cavity.
6. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to any one of claims 1 to 5, wherein: the high-resolution grating spectrum analyzer is replaced by a deep ultraviolet narrow-band filter and a photon energy detector; and the deep ultraviolet narrow-band filter is connected with the photon energy detector.
7. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 6, wherein: the deep ultraviolet narrow-band filter comprises an upper reflecting film system and a lower reflecting film system;
the lower reflecting film system comprises a substrate, a next film layer and a next second film layer; the next film layer and the second film layer are alternately plated on the substrate; the number of the next film layer and the second film layer is 20-25 in total;
the upper reflecting film system comprises a resonant cavity layer, an upper film layer and an upper second film layer; the upper film layer and the film layer are alternately plated above the resonant cavity layer; the number of the film layers and the film layers of the previous type is 20-25 in total;
the thickness of the upper film layer and the lower film layer is one fourth of the quotient obtained by dividing the required wavelength by the refractive index of the materials of the upper film layer and the lower film layer at the wavelength;
the thicknesses of the upper second type film layer and the lower second type film layer are one fourth of the quotient obtained by dividing the required wavelength by the refractive indexes of the materials of the upper first type film layer and the lower second type film layer at the wavelength.
8. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 7, wherein: the substrate and the resonant cavity layer are made of magnesium fluoride.
9. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 8, wherein: the upper film layer and the lower film layer are magnesium fluoride; the upper two kinds of film layers and the lower two kinds of film layers are calcium fluoride.
10. The device for realizing high-efficiency and high-resolution reflective electronic energy spectrum according to claim 9, wherein: the photon energy detector has a structure selected from one of a Geiger-Muller counter tube and a photomultiplier tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911345465.XA CN110895253A (en) | 2019-12-24 | 2019-12-24 | High-efficient high-resolution's reflection of light electron energy spectrum realizes device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911345465.XA CN110895253A (en) | 2019-12-24 | 2019-12-24 | High-efficient high-resolution's reflection of light electron energy spectrum realizes device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110895253A true CN110895253A (en) | 2020-03-20 |
Family
ID=69788276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911345465.XA Pending CN110895253A (en) | 2019-12-24 | 2019-12-24 | High-efficient high-resolution's reflection of light electron energy spectrum realizes device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110895253A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047215A (en) * | 2021-10-20 | 2022-02-15 | 北京科技大学顺德研究生院 | Device and method for eliminating uneven charge on surface of measured sample |
-
2019
- 2019-12-24 CN CN201911345465.XA patent/CN110895253A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047215A (en) * | 2021-10-20 | 2022-02-15 | 北京科技大学顺德研究生院 | Device and method for eliminating uneven charge on surface of measured sample |
| CN114047215B (en) * | 2021-10-20 | 2023-08-15 | 北京科技大学顺德研究生院 | Device and method for eliminating uneven charge on surface of sample to be measured |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Perney et al. | Tuning localized plasmon cavities for optimized surface-enhanced Raman scattering | |
| JP5419411B2 (en) | Terahertz wave generator | |
| JP2005527833A (en) | Elemental X-ray fluorescence microscope and method of operation | |
| US11283304B2 (en) | Plasmonic rectenna device and method of manufacturing | |
| Steglich et al. | A normal-incidence PtSi photoemissive detector with black silicon light-trapping | |
| US20130299933A1 (en) | Plasmon induced hot carrier device, method for using the same, and method for manufacturing the same | |
| Aruev et al. | Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range | |
| CN110895253A (en) | High-efficient high-resolution's reflection of light electron energy spectrum realizes device | |
| Fuchs et al. | Sensitivity calibration of an imaging extreme ultraviolet spectrometer-detector system for determining the efficiency of broadband extreme ultraviolet sources | |
| CN211505285U (en) | High-efficient high-resolution's reflection of light electron energy spectrum realizes device | |
| Siegmund et al. | Soft x-ray and extreme ultraviolet quantum detection efficiency of potassium bromide photocathode layers on microchannel plates | |
| Anefalos Pereira et al. | Test of the CLAS12 RICH large-scale prototype in the direct proximity focusing configuration | |
| Wang et al. | A new optical model for photomultiplier tubes | |
| Setälä et al. | Boron-implanted black silicon photodiode with close-to-ideal responsivity from 200 to 1000 nm | |
| US9297764B2 (en) | Method for determining characteristics of a photoconverter without contact | |
| Eisenhauer et al. | Grazing incidence X‐ray fluorescence analysis of buried interfaces in periodically structured crystalline silicon thin‐film solar cells | |
| Wen et al. | High-efficiency narrow-band plasmonic hot electron conversion from nanoscale sodium–silicon heterostructures | |
| RU2633517C1 (en) | Appliance for performances measurement of plasma spectral lines in reactor-tokamak | |
| CN110261350A (en) | A kind of optical sensor system and sensing testing method | |
| Chen et al. | Efficient Frequency Upconversion Photodetection in Heterojunction of InSe and Silicon Photonic Crystal Cavity | |
| Stutman et al. | Ultrasoft x-ray telescopes for fluctuation imaging in fusion plasmas | |
| Schlüter et al. | Detailed investigations of PMTs in optical sensors for neutrino telescopes such as IceCube Upgrade | |
| Liu et al. | Spectrum Acquisition System Using Photoelectric Detection and Its Data Mining Simulation of Spectral Texture Features | |
| Xie et al. | Real time evolution of antimony deposition for high performance alkali photocathode development | |
| Protopopov et al. | X-ray imaging of micro-objects using dark field refraction-contrast method with resonantly absorbing multilayer mirrors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |