CN110890609A - Coplanar waveguide based on flexible substrate and manufacturing method - Google Patents
Coplanar waveguide based on flexible substrate and manufacturing method Download PDFInfo
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- CN110890609A CN110890609A CN201911168226.1A CN201911168226A CN110890609A CN 110890609 A CN110890609 A CN 110890609A CN 201911168226 A CN201911168226 A CN 201911168226A CN 110890609 A CN110890609 A CN 110890609A
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- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 238000004088 simulation Methods 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 238000001883 metal evaporation Methods 0.000 claims abstract description 6
- 238000005457 optimization Methods 0.000 claims description 26
- 238000004528 spin coating Methods 0.000 claims description 12
- 238000010586 diagram Methods 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/006—Manufacturing dielectric waveguides
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a coplanar waveguide based on a flexible substrate and a manufacturing method thereof, wherein the specific structure is a layered structure which sequentially comprises a flexible substrate (3), a high-dielectric-constant dielectric layer (4), a first GND metal layer (11), a second GND metal layer (12) and a transmission line metal layer (2) arranged between the first GND metal layer and the second GND metal layer from bottom to top, wherein the transmission line metal layer (2) comprises a coplanar waveguide input end and a coplanar waveguide output end; a novel circuit structure design and a preparation process are adopted, and a high-dielectric-constant barium titanate dielectric layer is coated on a flexible PET substrate as a microstrip line dielectric layer by adopting a magnetron sputtering method. The method comprises the steps of optimizing structural parameters of the coplanar waveguide through HFSS design, obtaining layout design through ADS simulation, and adopting magnetron sputtering high-dielectric-constant dielectric layer and metal evaporation growth technology after photoetching. The invention makes the application of the flexible device in the large scale integrated circuit possible; the method has wide application prospect in the fields of manufacturing of flexible radio frequency integrated circuits and intelligent wearing.
Description
Technical Field
The patent belongs to the field of flexible radio frequency circuit design, and particularly relates to a radio frequency coplanar waveguide of a flexible plastic PET substrate and a preparation process thereof.
Background
Flexible electronics is a new electronic technology for manufacturing organic and inorganic electronic devices on flexible and ductile plastic or thin metal substrates, and has wide application in the fields of information, energy, medical treatment, national defense and the like. Such as printed RFID, surface mount for electronics, organic light emitting diodes OLED, flexible electronic displays, etc. The invention adopts a novel process, optimizes the structural parameters of the coplanar waveguide through HFSS design, obtains the layout design of the flexible coplanar waveguide through ADS simulation, adopts a magnetron sputtering high dielectric constant dielectric layer and a metal evaporation growth technology after photoetching to prepare a high-performance flexible radio frequency coplanar waveguide structure on a flexible substrate, and is expected to be widely applied to the aspects of wearable electronics, large-scale flexible integrated circuits and the like in the future.
Disclosure of Invention
The invention aims to provide a coplanar waveguide based on a flexible PET substrate and a manufacturing method thereof, which adopt a low-temperature magnetron sputtering process to design and prepare a dielectric layer with a higher dielectric constant so as to realize large-scale integrated application of the radio frequency coplanar waveguide.
The coplanar waveguide based on the flexible substrate is of a layered structure and sequentially comprises a flexible substrate 3, a high-dielectric-constant dielectric layer 4, a first GND metal layer 11, a second GND metal layer 12 and a transmission line metal layer 2 arranged between the first GND metal layer and the second GND metal layer, wherein the transmission line metal layer 2 comprises a coplanar waveguide input end and a coplanar waveguide output end.
The invention discloses a method for manufacturing a coplanar waveguide based on a flexible substrate, which comprises the following steps:
firstly, designing and adjusting parameters of a coplanar waveguide structure by utilizing HFSS software, designing a basic schematic diagram of the coplanar waveguide in ADS simulation software, finishing connection and design by adopting a microstrip line commonly used in a microstrip circuit as an optimization tool of the coplanar waveguide, initializing basic length and width parameters of the coplanar waveguide, and designing a symmetrical network structure;
step two, calculating to obtain relevant parameters of the coplanar waveguide, wherein the thickness of the substrate is set to be 0.128mm, the relative dielectric constant of the microstrip line is 97.2, the conductivity of the microstrip line is 5.88E +7, the packaging height of the microstrip circuit is 1.0E +33mm, the thickness of a metal layer of the microstrip line is 500nm, the characteristic impedance of the input port is 50 omega, the characteristic impedance of the output port is 50 omega, the basic length and width of the microstrip line are 3279 mu m and 9.13 mu m respectively through calculation, and the distance between the microstrip line and the ground plane is 5 mu m;
step three, carrying out simulation and optimization with S parameters as targets on the microstrip line circuit diagram, adding an optimization control, setting 1Ghz as a target working frequency interval and the numerical requirement of the S parameters in the interval, and finishing the optimization setting of the coplanar waveguide unit;
step four, carrying out simulation to obtain a curve of the S parameter, comparing the curve with a target, and obtaining an optimal result after multiple times of optimization;
fifthly, generating a layout of the coplanar waveguide, performing simulation after layout optimization to obtain a simulation curve, and storing the layout;
preparing a mask according to the generated layout, and generating a 97.2 high-dielectric-constant dielectric layer on the flexible substrate through magnetron sputtering;
step seven, cleaning the flexible substrate in ultrasonic by using acetone and isopropanol, then carrying out spin coating on the substrate subjected to magnetron sputtering, using 1813 positive photoresist, carrying out spin coating at a rotation speed of 4000r/min, a spin coating time of 30s and a spin coating temperature of 115 ℃, and carrying out prebaking on the photoresist for 3 minutes at 90 ℃;
eighthly, carrying out alignment photoetching according to the generated mask plate to form a pattern of the coplanar waveguide;
and step nine, performing metal evaporation on the pattern for forming the coplanar waveguide to form a gold electrode metal layer with the thickness of 500nm, and removing the photoresist to complete the preparation.
Compared with the prior art, the invention can expect to achieve the following positive technical effects:
(1) the bottom PET transparent substrate is adopted, so that the production cost is reduced, and the application of the flexible device in a large-scale integrated circuit is possible;
(2) compared with the traditional silicon substrate, the flexible radio frequency integrated circuit has the advantages that the working function of the device can be greatly improved, the capability of working under multiple states can be greatly improved, the working frequency and the response speed can be improved, and the flexible radio frequency integrated circuit has wide application prospects in the fields of manufacturing and intelligent wearing.
Drawings
FIG. 1 is a schematic diagram of a coplanar waveguide structure based on a flexible substrate according to the present invention;
FIG. 2 is a top view of a coplanar waveguide structure based on a flexible substrate according to the present invention;
FIG. 3 is a graphical representation of the S-parameter of a coplanar waveguide based on a flexible substrate according to the present invention; s parameter optimization results comprise S11, S12, S21 and S22, and the results show that S11 and S22 of the coplanar waveguide are both below-30 dB and S12 and S21 of the coplanar waveguide are close to 0 near the preset working frequency of 1GHz, so that the coplanar waveguide has good transmission efficiency;
reference numerals:
11. a first GND metal layer 12, a second GND metal layer 2, a transmission line metal layer 3, a flexible substrate 4, a high-dielectric-constant dielectric layer
1. A coplanar waveguide input, 2, a coplanar waveguide output,
Detailed Description
The technical solution of the present invention is described in detail below with reference to the accompanying drawings and examples.
Fig. 1 and 2 are schematic diagrams of a coplanar waveguide structure based on a flexible substrate according to the present invention. The structure is a layered structure, and comprises a flexible substrate 3 (made of PET flexible plastics), a high-dielectric-constant dielectric layer 4 (serving as a microstrip line dielectric layer), a first GND metal layer 11, a second GND metal layer 12 and a transmission line metal layer 2 arranged between the first GND metal layer and the second GND metal layer from bottom to top in sequence.
The main working principle of the coplanar waveguide is as follows: the input end of the coplanar waveguide is connected with an input signal, based on the basic theory of microstrip lines, the parameter optimization of the coplanar waveguide structure is realized by adopting HFSS software design, so that the coplanar waveguide has higher transmission performance near the working frequency of 1GHz, the S11 and S22 thereof have return loss smaller than-30 dB, the S12 and S21 have insertion loss close to zero and have input and output impedance close to 50 ohms, and the parameters of the coplanar waveguide structure are changed, such as: the line width, the line height, the distance between the transmission line and the GND surface and the like, and the coplanar waveguide transmission line which works at high performance under 1GHz is designed. Firstly, designing and adjusting parameters of a coplanar waveguide structure in HFSS, designing a basic schematic diagram of the coplanar waveguide in ADS simulation software, adopting a common microstrip line in a microstrip circuit as an optimization tool of the coplanar waveguide, completing connection and design, initializing basic length and width parameters of the coplanar waveguide, and designing a symmetrical network structure. The related parameters of the coplanar waveguide are calculated to include that the thickness of the substrate is set to be 0.128mm, the relative dielectric constant of the microstrip line is 97.2, the conductivity of the microstrip line is 5.88E +7, the packaging height of the microstrip circuit is 1.0E +33mm, the thickness of the metal layer of the microstrip line is 500nm, the characteristic impedance of the input port is 50 ohms, the characteristic impedance of the output port is 50 ohms, the basic length and width of the microstrip line are 3279 μm and 9.13 μm respectively through calculation, and the distance between the microstrip line and the ground plane is 5 μm. Wherein the substrate is shown as 3 in fig. 1, the microstrip line is shown as 2 in fig. 1, and the ground plane is shown as 11 and 12 in fig. 1. The invention completes the design of the coplanar waveguide on the flexible substrate for the first time, the coplanar waveguide has better performance and higher working frequency, realizes the normal work of the circuit under different bending states, and provides possibility for the large-scale integration of the flexible radio frequency circuit.
As shown in fig. 3, a plot of the S-parameter of a coplanar waveguide based on a flexible substrate of the present invention. Since the present invention has a symmetrical structure, S11 is the same as S22, S12 is the same as S21, and S11 and S22 are reflection coefficients, i.e., the ratio of the S parameter representing the signal input from the port to be reflected back to the port, and are represented as lg (P11/P1), where P1 is the input signal and P11 is the reflected back signal, and the unit is dB. S12 and S21 represent insertion loss, which represents the ratio of the signal output from the output terminal to the signal input from the input terminal, and is denoted by lg (P12/P1), where P1 is the input signal and P12 is the output signal. And designing and generating a coplanar waveguide layout by using ADS radio frequency circuit design and simulation software, and optimizing a simulation result to obtain a simulation curve of S parameters.
And (3) carrying out simulation and optimization with S parameters as targets on the microstrip line circuit diagram, adding an optimization control, setting 1Ghz as a target working frequency interval and the numerical requirement of the S parameters in the interval, and finishing the optimization setting of the coplanar waveguide unit.
And (5) performing simulation, comparing the curve of the obtained S parameter with the target, and obtaining an optimal result after multiple times of optimization.
And generating a layout of the coplanar waveguide, performing simulation after layout optimization to obtain a simulation curve, and storing the layout.
The technical scheme of the invention is that a magnetron sputtering process is adopted, a flexible substrate is taken as a template, a high-dielectric-constant dielectric layer is plated on PET in a magnetron sputtering mode, then a layout metal image generated by an ADS simulation result is generated on the PET in a photoetching process, a high-dielectric-constant barium titanate dielectric layer is plated on the PET substrate, and then photoetching patterning and metal evaporation are adopted to realize the preparation of a metal layer, so that the preparation of the flexible coplanar waveguide designed in HFSS and ADS software is completed. The specific manufacturing process is as follows:
firstly, designing and adjusting parameters of a coplanar waveguide structure by utilizing HFSS software, designing a basic schematic diagram of the coplanar waveguide in ADS simulation software, finishing connection and design by adopting a microstrip line commonly used in a microstrip circuit as an optimization tool of the coplanar waveguide, initializing basic length and width parameters of the coplanar waveguide, and designing a symmetrical network structure;
step two, calculating related parameters of the coplanar waveguide, wherein the thickness of the substrate is set to be 0.128mm, the relative dielectric constant of the microstrip line is 97.2, the conductivity of the microstrip line is 5.88E +7, the packaging height of the microstrip circuit is 1.0E +33mm, the thickness of the metal layer of the microstrip line is 500nm, the characteristic impedance of the input port is 50 omega, the characteristic impedance of the output port is 50 omega, the basic length and width of the microstrip line are 3279 mu m and 9.13 mu m respectively through calculation, and the distance between the microstrip line and the ground plane is 5 mu m;
step three, carrying out simulation and optimization with S parameters as targets on the microstrip line circuit diagram, adding an optimization control, setting 1Ghz as a target working frequency interval and the numerical requirement of the S parameters in the interval, and finishing the optimization setting of the coplanar waveguide unit;
step four, carrying out simulation to obtain a curve of the S parameter, comparing the curve with a target, and obtaining an optimal result after multiple times of optimization;
fifthly, generating a layout of the coplanar waveguide, performing simulation after layout optimization to obtain a simulation curve, and storing the layout;
preparing a mask according to the generated layout, and generating a 97.2 high-dielectric-constant dielectric layer on the flexible substrate through magnetron sputtering;
step seven, cleaning the flexible substrate in ultrasonic by using acetone and isopropanol, then carrying out spin coating on the substrate subjected to magnetron sputtering, using 1813 positive photoresist, carrying out spin coating at a rotation speed of 4000r/min, a spin coating time of 30s and a spin coating temperature of 115 ℃, and carrying out prebaking on the photoresist for 3 minutes at 90 ℃;
eighthly, carrying out alignment photoetching according to the generated mask plate to form a pattern of the coplanar waveguide;
and step nine, performing metal evaporation on the pattern for forming the coplanar waveguide to form a gold electrode metal layer with the thickness of 500nm, and removing the photoresist to finish the preparation of the device.
Claims (2)
1. The coplanar waveguide based on the flexible substrate is characterized in that the coplanar waveguide is of a layered structure and sequentially comprises a flexible substrate (3), a high-dielectric-constant dielectric layer (4), a first GND metal layer (11), a second GND metal layer (12) and a transmission line metal layer (2) arranged between the first GND metal layer and the second GND metal layer, wherein the transmission line metal layer (2) comprises a coplanar waveguide input end and a coplanar waveguide output end.
2. A method for manufacturing a coplanar waveguide based on a flexible substrate is characterized by comprising the following steps:
firstly, designing and adjusting parameters of a coplanar waveguide structure by utilizing HFSS software, designing a basic schematic diagram of the coplanar waveguide in ADS simulation software, finishing connection and design by adopting a microstrip line commonly used in a microstrip circuit as an optimization tool of the coplanar waveguide, initializing basic length and width parameters of the coplanar waveguide, and designing a symmetrical network structure;
step two, calculating to obtain relevant parameters of the coplanar waveguide, wherein the thickness of the substrate is set to be 0.128mm, the relative dielectric constant of the microstrip line is 97.2, the conductivity of the microstrip line is 5.88E +7, the packaging height of the microstrip circuit is 1.0E +33mm, the thickness of a metal layer of the microstrip line is 500nm, the characteristic impedance of the input port is 50 omega, the characteristic impedance of the output port is 50 omega, the basic length and width of the microstrip line are 3279 mu m and 9.13 mu m respectively through calculation, and the distance between the microstrip line and the ground plane is 5 mu m;
step three, carrying out simulation and optimization with S parameters as targets on the microstrip line circuit diagram, adding an optimization control, setting 1Ghz as a target working frequency interval and the numerical requirement of the S parameters in the interval, and finishing the optimization setting of the coplanar waveguide unit;
step four, carrying out simulation to obtain a curve of the S parameter, comparing the curve with a target, and obtaining an optimal result after multiple times of optimization;
fifthly, generating a layout of the coplanar waveguide, performing simulation after layout optimization to obtain a simulation curve, and storing the layout;
preparing a mask according to the generated layout, and generating a 97.2 high-dielectric-constant dielectric layer on the flexible substrate through magnetron sputtering;
step seven, cleaning the flexible substrate in ultrasonic by using acetone and isopropanol, then carrying out spin coating on the substrate subjected to magnetron sputtering, using 1813 positive photoresist, carrying out spin coating at a rotation speed of 4000r/min, a spin coating time of 30s and a spin coating temperature of 115 ℃, and carrying out prebaking on the photoresist for 3 minutes at 90 ℃;
eighthly, carrying out alignment photoetching according to the generated mask plate to form a pattern of the coplanar waveguide;
and step nine, performing metal evaporation on the pattern for forming the coplanar waveguide to form a gold electrode metal layer with the thickness of 500nm, and removing the photoresist to complete the preparation.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112670695A (en) * | 2020-12-22 | 2021-04-16 | 西安电子科技大学 | Microstrip transmission line structure based on gold-free process and preparation method |
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| CN103840243A (en) * | 2013-11-20 | 2014-06-04 | 南京邮电大学 | Flexible coplanar waveguide manufacturing method |
| CN104319447A (en) * | 2014-10-21 | 2015-01-28 | 电子科技大学 | Multi-layer coplanar waveguide transmission line based on graphene and preparation method thereof |
| CN107611548A (en) * | 2017-09-16 | 2018-01-19 | 天津大学 | A kind of microwave power divider and preparation method based on flexible substrate |
| CN107634054A (en) * | 2017-09-18 | 2018-01-26 | 天津大学 | Silicon nanometer film revolution word logic inverter and preparation method thereof in flexible substrate |
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Patent Citations (4)
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|---|---|---|---|---|
| CN103840243A (en) * | 2013-11-20 | 2014-06-04 | 南京邮电大学 | Flexible coplanar waveguide manufacturing method |
| CN104319447A (en) * | 2014-10-21 | 2015-01-28 | 电子科技大学 | Multi-layer coplanar waveguide transmission line based on graphene and preparation method thereof |
| CN107611548A (en) * | 2017-09-16 | 2018-01-19 | 天津大学 | A kind of microwave power divider and preparation method based on flexible substrate |
| CN107634054A (en) * | 2017-09-18 | 2018-01-26 | 天津大学 | Silicon nanometer film revolution word logic inverter and preparation method thereof in flexible substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112670695A (en) * | 2020-12-22 | 2021-04-16 | 西安电子科技大学 | Microstrip transmission line structure based on gold-free process and preparation method |
| CN112670695B (en) * | 2020-12-22 | 2022-04-22 | 西安电子科技大学 | Microstrip transmission line structure based on gold-free process and preparation method |
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