CN110890388B - Array substrate and display panel - Google Patents
Array substrate and display panel Download PDFInfo
- Publication number
- CN110890388B CN110890388B CN201911193411.6A CN201911193411A CN110890388B CN 110890388 B CN110890388 B CN 110890388B CN 201911193411 A CN201911193411 A CN 201911193411A CN 110890388 B CN110890388 B CN 110890388B
- Authority
- CN
- China
- Prior art keywords
- electrode
- substrate
- transparent electrode
- pixel
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses an array substrate and a display panel. The array substrate comprises a substrate, and a thin film transistor and a pixel electrode which are arranged on the substrate; the pixel electrodes are connected with the corresponding thin film transistors; the pixel electrode comprises a first transparent electrode, a first metal electrode and a second transparent electrode which are arranged in a stacked mode; the orthographic projection of the first metal electrode on the substrate is smaller than the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate, and the orthographic projection of the first metal electrode on the substrate is positioned in the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate. The light transmission area of the pixel electrode can be increased, and the light transmittance of the pixel electrode can be improved. Light that sends when OLED reflects to the array substrate through the finger to when passing through pixel electrode directive fingerprint identification module, can increase the light of directive fingerprint identification module, and then improved the fingerprint identification precision.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to an array substrate and a display panel.
Background
When fingerprint identification, need shine the light that the fingerprint reflects on the light sensing detector through display panel to realize fingerprint identification. When light passes through the display panel, the light is seriously damaged, the light transmittance is low, and the fingerprint identification precision is low.
Disclosure of Invention
The invention provides an array substrate and a display panel, which are used for improving the identification precision of a fingerprint identification area.
In a first aspect, an embodiment of the present invention provides an array substrate, including a substrate, and a thin film transistor and a pixel electrode disposed on the substrate; the pixel electrodes are connected with the corresponding thin film transistors;
the pixel electrode comprises a first transparent electrode, a first metal electrode and a second transparent electrode which are arranged in a stacked mode; the orthographic projection of the first metal electrode on the substrate is smaller than the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate, and the orthographic projection of the first metal electrode on the substrate is positioned in the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate.
Optionally, the first transparent electrode and the second transparent electrode have a first region and a second region surrounding the first region, and an orthographic projection of the second region on the substrate does not overlap with an orthographic projection of the first metal electrode on the substrate.
Optionally, the first metal electrode comprises a top surface in contact with the first transparent electrode, a bottom surface in contact with the second transparent electrode, and a side surface; the side surface comprises a groove.
Optionally, the first transparent electrode and the second transparent electrode cover the first metal electrode.
Optionally, the array substrate further comprises an electrode compensation layer; the electrode compensation layer is arranged on one side of the first transparent electrode, which is far away from the first metal electrode, and the electrode compensation layer is connected with the first transparent electrode.
Optionally, the array substrate further comprises an electrode compensation layer and an insulating layer;
the insulating layer is arranged on one side of the first transparent electrode, which is far away from the first metal electrode, and the electrode compensation layer is arranged on one side of the insulating layer, which is far away from the first transparent electrode;
the insulating layer is provided with a first via hole and a second via hole, and the electrode compensation layer is connected with the first transparent electrode through the first via hole and the second via hole.
Optionally, the thin film transistor includes a source and a drain electrode, and the electrode compensation layer and the source and the drain electrode are disposed on the same layer.
Optionally, an orthographic projection of the first metal electrode on the substrate covers an orthographic projection of the electrode compensation layer on the substrate.
Optionally, the array substrate further comprises a pixel defining layer; the pixel limiting layer is arranged on one side of the pixel electrode far away from the thin film transistor;
the pixel electrode comprises a third area and a fourth area surrounding the third area, and the fourth area of the pixel electrode comprises a hollow structure; the pixel defining layer exposes the third region of the pixel electrode and covers the fourth region of the pixel electrode.
In a second aspect, an embodiment of the present invention further provides a display panel, including the array substrate provided in any embodiment of the present invention.
According to the technical scheme of the embodiment of the invention, the array substrate comprises a substrate, and a thin film transistor and a pixel electrode which are arranged on the substrate; the pixel electrodes are connected with the corresponding thin film transistors; the pixel electrode comprises a first transparent electrode, a first metal electrode and a second transparent electrode which are arranged in a stacked mode; the orthographic projection of the first metal electrode on the substrate is smaller than the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate, and the orthographic projection of the first metal electrode on the substrate is positioned in the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate, so that the light transmission area in the pixel electrode is increased by the difference part between the area of the first transparent electrode and the area of the first metal electrode, and the light transmittance of the pixel electrode can be improved. Light that sends when OLED reflects to the array substrate through the finger to when passing through pixel electrode directive fingerprint identification module, can increase the light of directive fingerprint identification module, and then improved the fingerprint identification precision.
Drawings
Fig. 1 is a schematic structural diagram of a display device provided in the prior art;
fig. 2 is a schematic structural diagram of a display panel provided in the prior art;
fig. 3 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;
fig. 4 is a schematic top view of a pixel electrode according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a conventional pixel circuit;
fig. 6 is a cross-sectional structural view of a conventional pixel electrode;
FIG. 7 is a schematic cross-sectional view taken along section AA' of FIG. 4;
fig. 8 is a schematic top view of another pixel electrode according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a pixel electrode according to an embodiment of the present invention;
fig. 10 is a schematic structural view of another array substrate according to an embodiment of the present invention;
fig. 11 is a schematic structural view of another array substrate according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of another array substrate according to an embodiment of the present invention;
fig. 13 is a schematic structural view of another array substrate according to an embodiment of the present invention;
FIG. 14 is a schematic top view of the pixel electrode of FIG. 13;
fig. 15 is a schematic top view of a display panel according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a display device provided in the prior art. As shown in fig. 1, the display device includes a display panel 20 and an optical fingerprint identification module 10, wherein the optical fingerprint identification module 10 is disposed on the other side of the light emitting side of the display panel 20. When finger 30 was in certain position of display panel 20 light-emitting side, the light-struck of display panel 20 light-emitting side arrived finger 30 and reflects to optics fingerprint identification module 10, and optics fingerprint identification module 10 carries out the analysis to reflection light after receiving the reverberation, realizes fingerprint identification. Fig. 2 is a schematic structural diagram of a display panel provided in the prior art. As shown in fig. 1 and 2, the display panel includes a substrate 101, a thin film transistor 102 disposed on the substrate 101, and a pixel electrode 103, wherein the pixel electrode 103 is disposed on a side of the thin film transistor 102 away from the substrate 101. The thin film transistor 102 includes metal electrodes such as a gate electrode, a source electrode, and a drain electrode. Due to the metal electrode and the pixel electrode 103 in the thin film transistor 102 and the opacity of the metal trace electrically connected to the metal electrode and the pixel electrode 103, the light transmittance of the display panel 20 is relatively low, the light reflected by the finger 30 to the display panel 20 is relatively severely lost after passing through the display panel 20, and the light received by the optical fingerprint identification module 10 is relatively small, resulting in relatively low fingerprint identification accuracy.
In view of the above technical problems, an embodiment of the present invention provides an array substrate. Fig. 3 is a schematic structural diagram of an array substrate according to an embodiment of the present invention, and fig. 4 is a schematic top-view structural diagram of a pixel electrode according to an embodiment of the present invention. As shown in fig. 3 and 4, the array substrate includes a substrate 110, and a thin film transistor 120 and a pixel electrode 130 disposed on the substrate 110; the pixel electrode 130 is connected to the corresponding thin film transistor 120; the pixel electrode 130 includes a first transparent electrode 131, a first metal electrode 132, and a second transparent electrode 133 that are stacked; an orthographic projection of the first metal electrode 132 on the substrate 110 is smaller than an orthographic projection of the first transparent electrode 131 on the substrate 110 and an orthographic projection of the second transparent electrode 133 on the substrate 110, and the orthographic projection of the first metal electrode 132 on the substrate 110 is positioned within the orthographic projection of the first transparent electrode 131 on the substrate 110 and the orthographic projection of the second transparent electrode 133 on the substrate 110.
Specifically, the array substrate may include a plurality of pixel electrodes 130 and corresponding thin film transistors 120. The adjacent pixel electrodes 130 are insulated from each other. One pixel electrode 130 and one thin film transistor 120 are exemplarily shown in fig. 3. Fig. 5 is a schematic structural diagram of a conventional pixel circuit. As shown in fig. 5, the pixel circuit includes a switching transistor T0, a driving transistor N0, and a storage capacitor Cs. The switching transistor T0 has a gate connected to the Scan line to receive the Scan signal Scan1, a source connected to the data line to receive the data signal Vdata, and a drain connected to the gate of the driving transistor N0. The source of the driving transistor N0 is connected to a first voltage terminal to receive a first voltage Vdd (high voltage), and the drain is connected to the anode of an Organic Light Emitting Diode (OLED); one end of the storage capacitor Cs is connected to the drain of the switching transistor T0 and the gate of the driving transistor N0, and the other end is connected to the source of the driving transistor N0 and a first voltage terminal; the cathode of the OLED is connected to a second voltage terminal to receive a second voltage Vss (low voltage, e.g., ground voltage). When the Scan line applies the Scan signal Scan1 to turn on the switch transistor T0, the data signal Vdata fed by the data line charges the storage capacitor Cs through the switch transistor T0, so that the data signal Vdata is stored in the storage capacitor Cs, and the stored data signal Vdata controls the driving transistor N0 to be turned on, so that the driving transistor N0 forms a driving current to drive the OLED to emit light.
Accordingly, the pixel electrode 130 may be an anode of the OLED, and the thin film transistor 120 may be the driving transistor N0 in the pixel circuit. The pixel electrode 130 is required to have not only a good hole injection capability but also a good reflection effect. Therefore, the first and second transparent electrodes 131 and 133 in the pixel electrode 130 may have a good hole injection capability. For example, the material of the first transparent electrode 131 and the second transparent electrode 133 may be Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). The first metal electrode 132 may have a good reflection function, for example, the material of the first metal electrode 132 may be silver or an alloy containing silver. On this basis, by setting the orthographic projection of the first metal electrode 132 on the substrate 110 to be smaller than the orthographic projection of the first transparent electrode 131 on the substrate 110 and the orthographic projection of the second transparent electrode 133 on the substrate 110, and the orthographic projection of the first metal electrode 132 on the substrate 110 is located in the orthographic projection of the first transparent electrode 131 on the substrate 110 and the orthographic projection of the second transparent electrode 133 on the substrate 110, the light-transmitting area in the pixel electrode 130 is increased by the difference between the area of the first transparent electrode 131 and the projection of the first metal electrode 132, so that the light transmittance of the pixel electrode 130 can be improved.
Fig. 6 is a cross-sectional structural view of a conventional pixel electrode, and fig. 7 is a cross-sectional structural view of fig. 4 taken along a cross-section AA'. In general, orthographic projections of the first transparent electrode 131 and the second transparent electrode 133 on the substrate 110 completely overlap. As shown in fig. 6 and 7, when the area of the orthographic projection of the conventional pixel electrode on the substrate is equal to the area of the orthographic projection of the pixel electrode 130 in the present embodiment on the substrate, compared to the area of the pixel electrode in the prior art which is both a reflective film layer, the portion of the pixel electrode 130 in which the orthographic projection of the first transparent electrode 131 on the substrate 110 is larger than the orthographic projection of the first metal electrode 132 on the substrate 110 is a light-transmitting film layer, that is, the light-transmitting area of the pixel electrode 130 is increased, and the light transmittance of the pixel electrode 130 is increased on the basis of ensuring the reflection function and the conduction function of the first metal electrode 132 in the pixel electrode 130. When the light that OLED sent is through finger reflection to array substrate to during through pixel electrode 130 directive fingerprint identification module, can increase the light of directive fingerprint identification module, and then improved the fingerprint identification precision.
In the above embodiment, the light emitting mode of the OLED is top emission, and the corresponding pixel electrode 130 is an anode of the OLED. In other embodiments, the light emitting mode of the OLED may also be bottom emission, in which case the pixel electrode 130 is a cathode of the OLED.
With continued reference to fig. 4, the first and second transparent electrodes 131 and 133 have a first region 1311 and a second region 1312 surrounding the first region 1311, and an orthogonal projection of the second region 1312 on the substrate 110 does not overlap an orthogonal projection of the first metal electrode 132 on the substrate 110.
Specifically, the second region 1312 may be a partial edge region of the first and second transparent electrodes 131 and 133. As shown in fig. 4, the second regions 1312 are located at both sides of the first region 1311. The second region 1312 does not overlap the first metal electrode 132, and the second region 1312 is a light-transmitting region. When the light of the OLED is reflected to the pixel electrode 130 by the finger, the light can pass through the second region 1312 and be emitted to the fingerprint identification module. Therefore, the light transmission area of the pixel electrode 130 can be increased by the first transparent electrode 131 and the second region 1312 of the second transparent electrode 133, and the light transmittance of the pixel electrode 130 is further improved.
In other embodiments, fig. 8 is a schematic top view structure diagram of another pixel electrode according to an embodiment of the present invention. As shown in fig. 8, the second region 1312 of the first and second transparent electrodes 131 and 133 is positioned at one side of the first region 1311. In this case, the two small-area second regions 1312 in fig. 4 can be combined into one large-area second region 1312, i.e., into one large-area light-transmitting region. When the sum of the areas of the two small-area second regions 1312 is equal to the area of the second region 1312 combined into one large-area second region 1312, the light transmittance of the second region 1312 combined into one large-area second region is relatively high, so that the light transmittance of the second region 1312 can be further increased.
In other embodiments, the second region 1312 of the first and second transparent electrodes 131 and 133 surrounds the first region 1311, that is, the first metal electrode is recessed relative to the first and second transparent electrodes 131 and 133 in the circumferential direction, and the second region 1312 with high light transmittance is formed around the first electrode.
With continued reference to fig. 7, the first metal electrode 132 includes a top surface in contact with the first transparent electrode 131, a bottom surface in contact with the second transparent electrode 133, and side surfaces; the sides include a recess 1321.
In particular, the array substrate may include a plurality of pixel electrodes. In forming the pixel electrode, a first transparent electrode layer, a first metal electrode layer, and a second transparent electrode layer may be sequentially formed, and then the second transparent electrode layer, the first metal electrode layer, and the first transparent electrode layer may be sequentially patterned to form a plurality of pixel electrodes. When patterning each electrode layer, the second transparent electrode layer is disposed at the outermost layer away from the substrate, and thus the second transparent electrode layer may be patterned first to form the second transparent electrode 133. The first metal electrode layer is then patterned to form a first metal electrode 132. When the first metal electrode 132 is formed, due to the edge blocking effect of the first transparent electrode layer and the second transparent electrode 133, when the side surface of the first metal electrode 132 is etched towards the middle, the side surface of the first metal electrode 132 can have different etching rates, so that the groove 1321 is formed on the side surface, that is, the edge of the first metal electrode 132 is removed, thereby increasing the light transmittance of the edge of the first metal electrode 132, and further increasing the light transmittance of the pixel electrode. After the first metal electrode 132 is formed, the first transparent electrode layer is patterned to form a first transparent electrode 131. The first transparent electrode 131 and the second transparent electrode 133 may have the same shape, so as to reduce the occupied area of the pixel electrode as much as possible while ensuring the conductive function of the pixel electrode.
Fig. 9 is a schematic structural diagram of a pixel electrode according to an embodiment of the invention. As shown in fig. 9, the first and second transparent electrodes 131 and 133 cover the first metal electrode 132.
Specifically, when forming the pixel electrode, the first transparent electrode layer may be formed first, and the first transparent electrode layer may be patterned to form the first transparent electrode 131. Then, a first metal electrode layer is formed and patterned to form a first metal electrode 132. Then, a second transparent electrode layer is formed and patterned to form a second transparent electrode 133. When the second transparent electrode layer is formed, the second transparent electrode layer covers the first metal electrode 132. After patterning the second transparent electrode layer, the second transparent electrode 133 covers the top and side surfaces of the first metal electrode 132 and is in contact with the first transparent electrode 131, and thus a transparent region is formed at a contact region of the first transparent electrode 131 and the second transparent electrode 133, so that light transmittance of the pixel electrode can be increased.
Fig. 10 is a schematic structural diagram of another array substrate according to an embodiment of the invention. As shown in fig. 10, the array substrate further includes an electrode compensation layer 140; the electrode compensation layer 140 is disposed on a side of the first transparent electrode 131 away from the first metal electrode 132, and the electrode compensation layer 140 is connected to the first transparent electrode 131.
Specifically, the first metal electrode 132 has a better conductive effect than the first and second transparent electrodes 131 and 133. When the area of the first metal electrode 132 is smaller than the areas of the first and second transparent electrodes 131 and 133, the conductive effect of the pixel electrode 130 is reduced. By arranging the electrode compensation layer 140 on the side of the first transparent electrode 131 far away from the first metal electrode 132, the electrode compensation layer 140 is in contact with the first transparent electrode 131, so that the cross-sectional area of the first transparent electrode 131 can be increased, the equivalent resistance of the first transparent electrode 131 is reduced, and the conductive effect of the pixel electrode 130 is increased. Illustratively, the material of the electrode compensation layer 140 may be silver or an alloy containing silver.
On the basis of the above technical solution, with continuing reference to fig. 10, the orthographic projection of the first metal electrode 132 on the substrate 110 covers the orthographic projection of the electrode compensation layer 140 on the substrate 110.
Specifically, the electrode compensation layer 140 is an opaque film layer, and the orthographic projection of the first metal electrode 132 on the substrate 110 is set to cover the orthographic projection of the electrode compensation layer 140 on the substrate 110, so that on the basis that the first metal electrode 132 blocks light from transmitting through the pixel electrode 130, the electrode compensation layer 140 does not additionally block light from transmitting through the pixel electrode 130, and the conductive effect of the pixel electrode 130 can be increased on the basis of ensuring the light transmittance of the pixel electrode 130.
Preferably, the orthographic projection of the first metal electrode 132 on the substrate 110 coincides with the orthographic projection of the electrode compensation layer 140 on the substrate 110, and at this time, the conductive effect of the pixel electrode 130 can be increased to the maximum extent on the basis of ensuring the light transmittance of the pixel electrode 130.
Fig. 11 is a schematic structural diagram of another array substrate according to an embodiment of the invention. As shown in fig. 11, the array substrate includes an electrode compensation layer 140 and an insulating layer 150; the insulating layer 150 is disposed on a side of the first transparent electrode 131 away from the first metal 132 electrode, and the electrode compensation layer 140 is disposed on a side of the insulating layer 150 away from the first transparent electrode 131; the insulating layer 150 is provided with a first via hole 151 and a second via hole 152, and the electrode compensation layer 140 is connected to the first transparent electrode 131 through the first via hole 151 and the second via hole 152.
Specifically, in a direction perpendicular to the substrate 110, orthographic projections of the first and second via holes 151 and 152 may be located at both ends of the first transparent electrode 131, respectively. The equivalent resistance of the electrode compensation layer 140 is smaller than that of the first transparent electrode 131, and the electrode compensation layer 140 is arranged in parallel with the first transparent electrode 131, which is equivalent to parallel connection of the first transparent electrode 131 with a smaller equivalent resistance, so that the resistance of the first transparent electrode 131 can be reduced, and the conductive effect of the pixel electrode is improved.
Fig. 12 is a schematic structural view of another array substrate according to an embodiment of the present invention. As shown in fig. 12, the thin film transistor 120 includes a source-drain electrode 121, and an electrode compensation layer 140 is disposed on the same layer as the source-drain electrode 121.
Specifically, when the thin film transistor 120 is formed, it is necessary to form a source-drain layer, and pattern the source-drain layer to form the source-drain electrode 121. Since the source/drain layer is a metal layer, the electrode compensation layer 140 is formed simultaneously when the source/drain layer is patterned, so that the electrode compensation layer 140 and the source/drain electrode 121 are disposed in the same layer. At this time, not only the process step of separately forming the electrode compensation layer 140 can be saved, but also the electrode compensation layer 140 and the source/drain electrode 121 are disposed in the same layer, which is beneficial to realizing the lightness and thinness of the array substrate.
In addition, a planarization layer 122 is further disposed on a side of the thin film transistor 120 away from the substrate 110, and the planarization layer 122 is in contact with the source-drain electrode 121 and is used for planarizing the thin film transistor 120. The pixel electrode 130 is electrically connected to the source-drain electrode 121 of the thin film transistor 120 through a via hole on the planarization layer 122, and is used for providing a driving signal for the pixel electrode 130. The planarization layer 122 can also be reused as an insulating layer, and the pixel electrode 130 is connected in parallel with the electrode compensation layer 140 by arranging another two via holes on the planarization layer 122, so that the resistance of the pixel electrode 130 is reduced, and the conductive effect of the pixel electrode is further improved.
Similarly, the orthographic projection of the first metal electrode 132 on the substrate 110 covers the orthographic projection of the electrode compensation layer 140 on the substrate 110. On the basis that the first metal electrode 132 blocks light from transmitting through the pixel electrode 130, the electrode compensation layer 140 does not additionally block light from transmitting through the pixel electrode 130, and the conductive effect of the pixel electrode 130 can be increased on the basis of ensuring the light transmittance of the pixel electrode 130.
Fig. 13 is a schematic structural diagram of another array substrate according to an embodiment of the invention, and fig. 14 is a schematic top-view structural diagram of the pixel electrode in fig. 13. As shown in fig. 13 and 14, the array substrate further includes a pixel defining layer 160, and the pixel defining layer 160 is disposed on a side of the pixel electrode 130 away from the thin film transistor 120. The pixel electrode 130 comprises a third area 134 and a fourth area 135 surrounding the third area 134, and the fourth area 135 of the pixel electrode 130 comprises a hollow structure 136; the pixel defining layer 160 exposes the third region 134 of the pixel electrode 130 and covers the fourth region 135 of the pixel electrode 130.
Specifically, the third region 134 of the pixel electrode 130 exposed by the pixel defining layer 160, corresponding to the pixel defining region, is used for forming an OLED device in a subsequent process. Therefore, the third region 134 of the pixel electrode 130 can ensure the conductive function of the pixel electrode 130 for transmitting the driving current for the OLED device. The fourth region 135 of the pixel electrode 130 is provided with the hollow structure 136, which can increase the light transmission area of the pixel electrode 130, and further increase the light transmittance of the pixel electrode 130. Therefore, by disposing the hollow structure 136 in the fourth region 135 of the pixel electrode 130, the light-transmitting area of the pixel electrode 130 is increased while the conductive function of the pixel electrode 130 is ensured.
It should be noted that there may be a plurality of hollow-out structures 136, so as to increase the light-transmitting area of the pixel electrode 130 as much as possible. The shape of the hollow 136 is not particularly limited, and may be, for example, rectangular, zigzag, or the like. The hollow structure 136 may be formed by a photolithography process. In other embodiments, with reference to fig. 14, the width d of the hollow structure 136 may be smaller than the exposure resolution of the exposure process in the photolithography process, so that the hollow structure 136 is not exposed, and when the array substrate is used to form a display panel, the display effect of the display panel may be improved.
The embodiment of the invention also provides a display panel. Fig. 15 is a schematic top view of a display panel according to an embodiment of the present invention. As shown in fig. 15, the display panel includes an array substrate 200 and a plurality of pixel units 210 located on the array substrate 200, the display panel may further include a plurality of scanning signal lines 220 and a plurality of data signal lines 230 located on the array substrate 200, the pixel units 210 may be disposed in a space formed by the scanning signal lines 220 and the data signal lines 230 crossing each other, the pixel units 210 may communicate with the data signal lines 230 electrically connected to the pixel units 210 correspondingly under the action of scanning signals input by the scanning signal lines 220 electrically connected to the pixel units, and the data signal lines 230 transmit data signals to the corresponding pixel units 210, thereby implementing the display function of the display device.
The array substrate 200 is provided in any embodiment of the present invention, and therefore has the same advantages as the array substrate provided in any embodiment of the present invention, and the details are not repeated herein. The display panel can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame and the like.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (9)
1. The array substrate is characterized by comprising a substrate, and a thin film transistor and a pixel electrode which are arranged on the substrate; the pixel electrodes are connected with the corresponding thin film transistors;
the pixel electrode comprises a first transparent electrode, a first metal electrode and a second transparent electrode which are arranged in a stacked mode; the orthographic projection of the first metal electrode on the substrate is smaller than the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate, and the orthographic projection of the first metal electrode on the substrate is positioned in the orthographic projection of the first transparent electrode on the substrate and the orthographic projection of the second transparent electrode on the substrate;
the first metal electrode comprises a top surface in contact with the first transparent electrode, a bottom surface in contact with the second transparent electrode, and a side surface; the side surface comprises a groove;
the second transparent electrode layer is arranged on the outermost layer of the pixel electrode far away from the substrate, and when the first transparent electrode, the first metal electrode and the second transparent electrode are patterned, the second transparent electrode layer is patterned first, and then the first metal electrode layer is patterned.
2. The array substrate of claim 1, wherein the first transparent electrode and the second transparent electrode have a first region and a second region surrounding the first region, and an orthographic projection of the second region on the substrate does not overlap with an orthographic projection of the first metal electrode on the substrate.
3. The array substrate of claim 2,
the first transparent electrode and the second transparent electrode wrap the first metal electrode.
4. The array substrate of claim 1, further comprising an electrode compensation layer; the electrode compensation layer is arranged on one side of the first transparent electrode, which is far away from the first metal electrode, and the electrode compensation layer is connected with the first transparent electrode.
5. The array substrate of claim 1, further comprising an electrode compensation layer and an insulating layer;
the insulating layer is arranged on one side of the first transparent electrode, which is far away from the first metal electrode, and the electrode compensation layer is arranged on one side of the insulating layer, which is far away from the first transparent electrode;
the insulating layer is provided with a first via hole and a second via hole, and the electrode compensation layer is connected with the first transparent electrode through the first via hole and the second via hole.
6. The array substrate of claim 5, wherein the thin film transistor comprises a source and a drain electrode, and the electrode compensation layer is disposed on the same layer as the source and the drain electrode.
7. The array substrate of claim 4 or 5, wherein an orthographic projection of the first metal electrode on the substrate covers an orthographic projection of the electrode compensation layer on the substrate.
8. The array substrate of claim 1, further comprising a pixel defining layer; the pixel limiting layer is arranged on one side of the pixel electrode far away from the thin film transistor;
the pixel electrode comprises a third area and a fourth area surrounding the third area, and the fourth area of the pixel electrode comprises a hollow structure; the pixel defining layer exposes the third region of the pixel electrode and covers the fourth region of the pixel electrode.
9. A display panel comprising the array substrate according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911193411.6A CN110890388B (en) | 2019-11-28 | 2019-11-28 | Array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911193411.6A CN110890388B (en) | 2019-11-28 | 2019-11-28 | Array substrate and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110890388A CN110890388A (en) | 2020-03-17 |
| CN110890388B true CN110890388B (en) | 2022-05-27 |
Family
ID=69749293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911193411.6A Active CN110890388B (en) | 2019-11-28 | 2019-11-28 | Array substrate and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110890388B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259595B (en) * | 2020-10-30 | 2022-10-11 | 武汉天马微电子有限公司 | Array substrate and display panel |
| CN112542502B (en) * | 2020-12-04 | 2022-08-02 | 武汉华星光电半导体显示技术有限公司 | Array substrate, preparation method thereof and display panel |
| CN112578585B (en) * | 2020-12-16 | 2023-02-17 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
| CN115295567A (en) * | 2022-08-15 | 2022-11-04 | 上海天马微电子有限公司 | Array substrate and electronic equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423514A (en) * | 2001-11-22 | 2003-06-11 | 株式会社半导体能源研究所 | Light-emitting device and its manufacture method |
| CN104064578A (en) * | 2013-03-21 | 2014-09-24 | 株式会社半导体能源研究所 | Display Device And Electronic Device |
| CN107664837A (en) * | 2017-10-20 | 2018-02-06 | 京东方科技集团股份有限公司 | A kind of reflective display |
| CN108305952A (en) * | 2018-01-13 | 2018-07-20 | 武汉华星光电半导体显示技术有限公司 | A kind of Organic Light Emitting Diode and preparation method thereof, display |
| CN108461533A (en) * | 2018-05-30 | 2018-08-28 | 武汉天马微电子有限公司 | Display panel and display device |
| CN109768182A (en) * | 2019-01-23 | 2019-05-17 | 京东方科技集团股份有限公司 | A kind of oled substrate, array substrate, display panel and display device |
| CN210200763U (en) * | 2019-07-31 | 2020-03-27 | 昆山国显光电有限公司 | Light-transmitting display panel, display panel and display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101716471B1 (en) * | 2010-06-07 | 2017-03-28 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and method of manufacturing thereof |
| KR102478474B1 (en) * | 2018-01-08 | 2022-12-19 | 삼성디스플레이 주식회사 | Display device |
-
2019
- 2019-11-28 CN CN201911193411.6A patent/CN110890388B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423514A (en) * | 2001-11-22 | 2003-06-11 | 株式会社半导体能源研究所 | Light-emitting device and its manufacture method |
| CN104064578A (en) * | 2013-03-21 | 2014-09-24 | 株式会社半导体能源研究所 | Display Device And Electronic Device |
| CN107664837A (en) * | 2017-10-20 | 2018-02-06 | 京东方科技集团股份有限公司 | A kind of reflective display |
| CN108305952A (en) * | 2018-01-13 | 2018-07-20 | 武汉华星光电半导体显示技术有限公司 | A kind of Organic Light Emitting Diode and preparation method thereof, display |
| CN108461533A (en) * | 2018-05-30 | 2018-08-28 | 武汉天马微电子有限公司 | Display panel and display device |
| CN109768182A (en) * | 2019-01-23 | 2019-05-17 | 京东方科技集团股份有限公司 | A kind of oled substrate, array substrate, display panel and display device |
| CN210200763U (en) * | 2019-07-31 | 2020-03-27 | 昆山国显光电有限公司 | Light-transmitting display panel, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110890388A (en) | 2020-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110890388B (en) | Array substrate and display panel | |
| CN110211975B (en) | Array substrate, display panel and display device | |
| CN110603642B (en) | Organic light emitting diode display with reduced lateral leakage | |
| CN111261043B (en) | display panel | |
| EP3678053A1 (en) | Fingerprint sensor and display device including the same | |
| CN108735792B (en) | Bottom-emission type O L ED array substrate, manufacturing method thereof, display panel and display device | |
| CN111477635B (en) | Display panel, manufacturing method thereof and display device | |
| US8692259B2 (en) | Light-emitting device and electronic apparatus | |
| US8901549B2 (en) | Organic light emitting diode touch display panel | |
| US20190065805A1 (en) | Display device and control method thereof | |
| US7098592B2 (en) | Electroluminescent display device | |
| US11561660B2 (en) | Display apparatuses and self-capacitance touch panels thereof | |
| CN108258010B (en) | Display device | |
| US11930671B2 (en) | Flexible display panel and manufacturing method thereof, and flexible display apparatus | |
| EP4053904B1 (en) | Display substrate and manufacturing method therefor, and display device | |
| US10996781B2 (en) | Display panel and display device | |
| US20210399060A1 (en) | Display apparatus | |
| US11515379B2 (en) | Display substrate including configuration of insulation layers covering contact pads in bonding region, and manufacturing method thereof | |
| US11978828B2 (en) | Display panel and display device | |
| US20200168850A1 (en) | Display device and a method for manufacturing the same | |
| JP2017126005A (en) | Display | |
| CN112750859B (en) | Display substrate, manufacturing method thereof and display device | |
| CN109065597B (en) | Organic light emitting display substrate | |
| KR20230067762A (en) | Display device and method of manufacturing the same | |
| US11683947B2 (en) | Organic light emitting display device and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |