CN110879198B - Extreme ultraviolet photoresist gassing pollution test system - Google Patents
Extreme ultraviolet photoresist gassing pollution test system Download PDFInfo
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- CN110879198B CN110879198B CN201911171642.7A CN201911171642A CN110879198B CN 110879198 B CN110879198 B CN 110879198B CN 201911171642 A CN201911171642 A CN 201911171642A CN 110879198 B CN110879198 B CN 110879198B
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- 238000012360 testing method Methods 0.000 title claims abstract description 93
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 63
- 238000010943 off-gassing Methods 0.000 claims abstract description 42
- 238000011109 contamination Methods 0.000 claims abstract description 30
- 230000009471 action Effects 0.000 claims abstract description 5
- 238000010926 purge Methods 0.000 claims description 16
- 239000003344 environmental pollutant Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 14
- 231100000719 pollutant Toxicity 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000012795 verification Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 4
- 239000007789 gas Substances 0.000 description 74
- 230000001105 regulatory effect Effects 0.000 description 15
- 230000001276 controlling effect Effects 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000005441 aurora Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G01N17/004—Investigating resistance of materials to the weather, to corrosion, or to light to light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
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Abstract
The utility model provides an extreme ultraviolet irradiation causes photoresist gassing pollution test system, this system of extreme ultraviolet light source chamber, light collection chamber, pollution sample test chamber, wherein: an extreme ultraviolet light source chamber for emitting irradiation light; the light collection chamber is used for reflecting and focusing the irradiation light emitted by the extreme ultraviolet light source chamber into the contaminated sample test chamber; and the contaminated sample testing chamber is used for testing the influence of the outgassing contamination characteristic on the performance of the system component when the photoresist is irradiated by extreme ultraviolet light under the action of the irradiation light rays transmitted by the light collecting chamber. The system for testing the outgassing pollution of the photoresist caused by the extreme ultraviolet light irradiation has a simple structure, is convenient to operate, not only can be used for researching the outgassing characteristic of the extreme ultraviolet photoresist, but also can be used for researching the influence of the outgassing pollution of the photoresist on the performance of system components, so that the contamination characteristic of the photoresist can be better evaluated.
Description
Technical Field
The invention relates to the technical field of semiconductors and the field of extreme ultraviolet lithography, in particular to an extreme ultraviolet photoresist outgassing pollution test system.
Background
In the field of semiconductor technology, some process equipment requires a clean vacuum environment during operation while also being irradiated with short wavelength light, such as an euv lithography machine. Therefore, careful consideration is required to the outgassing contamination characteristics of the material or component used in the vacuum system of the apparatus after exposure to extreme ultraviolet light. The extreme ultraviolet photoresist is an inevitable material in extreme ultraviolet lithography process equipment, is a high molecular polymer, has a high outgassing rate, and can rapidly generate a large amount of pollutants such as hydrocarbon under the action of high-energy extreme ultraviolet light, so that the surface performance of an optical element of a system is seriously polluted. Therefore, it is necessary to develop a photoresist outgassing contamination test system by euv light irradiation and test the contamination performance thereof to evaluate the outgassing contamination characteristics of euv photoresist.
Disclosure of Invention
Technical problem to be solved
The invention mainly aims to provide an extreme ultraviolet photoresist outgassing pollution testing system, which is used for researching the effects of the outgassing characteristics of the extreme ultraviolet photoresist and the outgassing pollution of the photoresist on the performance of system components.
(II) technical scheme
An extreme ultraviolet light irradiation-induced photoresist outgassing contamination test system, which comprises an extreme ultraviolet light source chamber 1, a light collection chamber 6 and a contamination sample test chamber 18, wherein: an extreme ultraviolet light source chamber 1 for emitting irradiation light; the light collection chamber 6 is used for reflecting and focusing the irradiation light emitted by the extreme ultraviolet light source chamber 1 into the contaminated sample testing chamber 18; and the contaminated sample testing chamber 18 is used for testing the influence of the outgassing contamination characteristic on the performance of the system component when the photoresist is irradiated by extreme ultraviolet light under the action of the irradiation light rays transmitted by the light collecting chamber 6.
In the above scheme, the euv light source chamber 1 has an irradiation light source 2, and the irradiation light source 2 is configured to emit irradiation light, and the emitted irradiation light enters the light collection chamber 6 through a light path outlet of the euv light source chamber 1 and a light path inlet of the light collection chamber 6 in sequence.
In the above scheme, the system further includes a debris reducing structure 3 between the euv light source chamber 1 and the light collecting chamber 6, wherein the debris reducing structure 3 is located on one side of the first gate valve 4, which is close to the euv light source chamber 1, and is used for preventing debris generated by the euv light source chamber 1 from being transmitted into the light collecting chamber 6 and contaminating the sample testing chamber 18.
The debris reducing structure 3 prevents debris generated by the euv light source chamber 1 from being transmitted into the light collecting chamber 6 and contaminating the sample testing chamber 18 by means of gas purging.
In the above scheme, the light collection chamber 6 includes a mirror adjustment stage 7 and a reflection collection mirror 8, and the reflection collection mirror 8 is installed on the mirror adjustment stage 7.
The reflecting and collecting mirror 8 is used for collecting the irradiation light in a specific solid angle, so as to realize the function of reflecting and focusing, the irradiation light is reflected into the contaminated sample testing chamber 18, and meanwhile, the reflecting and collecting mirror 8 is also used for filtering out extreme ultraviolet light with the central wavelength of 13.5 nm.
In the above scheme, the contaminated sample testing chamber 18 includes a shutter 12, an optical filter 13, a proof sample 14, a mirror 15, and a motion control stage 17, which are sequentially arranged along the optical path direction.
The shutter 12 is used for controlling the irradiation dose on the surface of the photoresist, the optical filter 13 is used for filtering out extreme ultraviolet light, the verification sample wafer 14 is used for evaluating the pollution characteristic of the photoresist, and the motion control carrier 17 is used for loading a silicon wafer 16 coated with the photoresist.
In the above scheme, the system further comprises a first gate valve 4 between the euv light source chamber 1 and the light collection chamber 6, and the first gate valve 4 is used for controlling the on-off of the euv light source chamber 1 and the light collection chamber 6.
The system also comprises a second gate valve 11 between the light collection chamber 6 and the contaminated sample testing chamber 18, wherein the second gate valve 11 is used for controlling the on-off of the aurora collection chamber 6 and the contaminated sample testing chamber 18.
In the above scheme, the euv light source chamber 1, the light collection chamber 6 and the contaminated sample testing chamber 18 are all high vacuum chambers.
In the above solution, the light collection chamber 6 has a purge gas inlet 9 and a purge gas outlet 10, and the purge gas flows between the purge gas inlet 9 and the purge gas outlet 10 to form a gas flow in the same direction as the light propagation direction, so as to block the contaminants in the contaminated sample testing chamber 18 from propagating into the light collection chamber 6.
In the above scenario, the contaminated sample testing chamber 18 also includes an RGA48, and the RGA48 is used to test the photoresist outgassing characteristics.
(III) advantageous effects
The extreme ultraviolet photoresist outgassing pollution test system provided by the invention is simple in structure and convenient to operate, can be used for researching the outgassing characteristic of the extreme ultraviolet photoresist and the influence of the outgassing pollution of the photoresist on the performance of system components, and thus can better evaluate the pollution characteristic of the photoresist.
Drawings
FIG. 1 is a schematic optical path diagram of an EUV photoresist outgassing contamination testing system in accordance with an embodiment of the present invention;
FIG. 2 is a schematic diagram of a vacuum system of an EUV photoresist outgassing contamination test system, in accordance with an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
As shown in fig. 1, fig. 1 is a schematic optical path diagram of an euv photoresist outgassing contamination testing system according to an embodiment of the present invention, the system includes an euv light source chamber 1, a light collecting chamber 6, and a contamination sample testing chamber 18, wherein:
an extreme ultraviolet light source chamber 1 for emitting irradiation light;
the light collection chamber 6 is used for reflecting and focusing the irradiation light emitted by the extreme ultraviolet light source chamber 1 into the contaminated sample testing chamber 18;
and the contaminated sample testing chamber 18 is used for testing the influence of the outgassing contamination characteristic on the performance of the system component when the photoresist is irradiated by extreme ultraviolet light under the action of the irradiation light rays transmitted by the light collecting chamber 6.
Specifically, the euv light source chamber 1 has an irradiation light source 2, the irradiation light source 2 is configured to emit irradiation light 5, and the irradiation light 5 enters the light collection chamber 6 through a light path outlet of the euv light source chamber 1 and a light path inlet of the light collection chamber 6 in sequence. The irradiation light 5 entering the light collection chamber 6 is transmitted to the reflection collection mirror 8 in the light collection chamber 6, reflected by the reflection collection mirror 8, sequentially passes through the light path outlet of the light collection chamber 6 and the light path inlet of the contaminated sample testing chamber 18, finally enters the contaminated sample testing chamber 18, is focused on the verification sample 14 of the sample testing chamber 18, and is reflected and irradiated to the silicon wafer 16 coated with the photoresist by the reflection mirror 15 again.
The light collection chamber 6 includes a mirror adjustment stage 7 and a reflection collection mirror 8, and the reflection collection mirror 8 is mounted on the mirror adjustment stage 7.
The reflection collecting mirror 8 is installed on the reflector adjusting carrier 7, the irradiation light source 2 radiates wide spectrum light, namely irradiation light 5, to a solid angle of 4 pi, and the reflection collecting mirror 8 is used for collecting the irradiation light 5 in a specific solid angle. The reflection collecting mirror 8 is an ellipsoidal mirror with a Mo/Si multilayer film structure, and by setting multilayer film parameters, extreme ultraviolet light with a central wavelength of 13.5nm is filtered out while reflection focusing is realized, and the narrow-band extreme ultraviolet light can be obtained by matching with a Zr film filter in a subsequent light path. In the above scheme, the contaminated sample testing chamber 18 includes a shutter 12, an optical filter 13, a verification sample 14, a reflecting mirror 15, and a motion control stage 17, which are sequentially arranged along the optical path direction, wherein: the shutter 12 is used for controlling the irradiation dose of the surface of the photoresist; the optical filter 13 is used for filtering back extreme ultraviolet light; the proof sample 14 is used to evaluate the photoresist contamination characteristics; the control stage 17 is used for loading the silicon wafer 16 coated with the photoresist, and the silicon wafer 16 coated with the photoresist is loaded on the motion control stage 17.
In the above scheme, a first gate valve 4 is further included between the extreme ultraviolet light source chamber 1 and the light collection chamber 6, and the first gate valve 4 is used for controlling the on-off of the extreme ultraviolet light source chamber 1 and the light collection chamber 6.
The system also comprises a second gate valve 11 between the light collection chamber 6 and the contaminated sample testing chamber 18, wherein the second gate valve 11 is used for controlling the on-off of the aurora collection chamber 6 and the contaminated sample testing chamber 18.
In order to prevent the debris from spreading and avoid the subsequent system and parts from being polluted by the debris, the system is further provided with a debris reducing structure 3 between the extreme ultraviolet light source chamber 1 and the light collecting chamber 6, the debris reducing structure 3 is located on the first port side of the first gate valve 4, and in the embodiment, the debris reducing structure 3 is used in a gas purging mode. Because the photoresist is a high molecular polymer with a large outgassing amount, particularly, the yield of pollutants is large after the extreme ultraviolet light irradiation, under normal conditions, the pollutants can diffuse into the light collection chamber 6 through the second gate valve 11 to seriously pollute the optical components of the light collection chamber 6, therefore, a pollutant purification structure is designed in the collection mirror chamber 6 and consists of a purified gas inlet 9 and a purified gas outlet 10, and the purified gas flows between the purified gas inlet 9 and the purified gas outlet 10 to form an air flow with the same light propagation direction for preventing the pollutants from diffusing and propagating into the light collection chamber 6.
Because the extreme ultraviolet light is very easy to absorb in the atmosphere and cannot be transmitted, the extreme ultraviolet photoresist outgassing pollution test needs to be carried out in a vacuum environment, and the extreme ultraviolet light source chamber 1, the light collection chamber 6 and the pollution sample test chamber 18 are all high vacuum chambers. In order to reduce the influence of the pollutants on the test result, the test system needs to reach a higher background vacuum degree and a gas pressure of less than 10 -5 Pa, FIG. 2 is a schematic diagram of a vacuum system of the EUV photoresist outgassing contamination testing system according to an embodiment of the present invention.
In FIG. 2, the EUV light source chamber 1, the light collection chamber 6, and the contaminated sample testing chamber 18 are all high vacuum chambers with vacuum degrees of less than 10 -4 Pa. Wherein the extreme ultraviolet light source chamber 1 and the contaminated sample testing chamber 18 are respectively provided with a first mechanical pump 27 and a fourth mechanical pump 57, the extreme ultraviolet light source chamber 1 and the contaminated sample testing chamber 18 are respectively provided with a first molecular pump 25 and a fourth molecular pump 55, the first mechanical pump 27 and the first molecular pump 25 are connected through a second rotary valve 26, the fourth mechanical pump 57 and the fourth molecular pump 55 are connected through a ninth rotary valve 56, a first gate valve 24 is connected between the first molecular pump 25 and the light collecting chamber 6, and the fourth molecular pump 55 and the contaminated sample testing chamber 18 are connected through a fourth gate valve 54.
The first molecular pump 25 is connected to the euv light source chamber 1 through a first gate valve 24, and the contaminated sample testing chamber 18 is connected to the fourth molecular pump 55 through a fourth gate valve 54. The light collection chamber 6 is provided with a second mechanical pump 34, a third mechanical pump 46, a second molecular pump 32 and a third molecular pump 44, the second mechanical pump 34 is connected with the second molecular pump 32 through a third rotary valve 33, the third mechanical pump 46 is connected with the third molecular pump 44 through a sixth rotary valve 45, a second gate valve 31 is connected between the second molecular pump 32 and the light collection chamber 6, and a third gate valve 43 is connected between the third molecular pump 44 and the light collection chamber 6.
In order to increase the speed of vacuum pumping, a first bypass angle valve 35 and a second bypass angle valve 58 are designed between the light collection chamber 6 and the second mechanical pump 34 and the fourth mechanical pump 57 of the contaminated sample testing chamber 18 and the vacuum chamber respectively. The vacuum degree in the extreme ultraviolet light source chamber 1, the light collection chamber 6, the vicinity of the purified gas outlet 10 of the pollutant purification structure and the pollution sample test chamber 18 is monitored by a first vacuum gauge 23, a second vacuum gauge 37, a third vacuum gauge 42 and a fourth vacuum gauge 50, and a first rotary valve 22, a fourth rotary valve 36, a fifth rotary valve 41 and an eighth rotary valve 49 are connected between the first vacuum gauge 23, the second vacuum gauge 37, the third vacuum gauge 42 and the fourth vacuum gauge 50 and the system chamber. The photoresist outgassing rate and composition in the contaminated sample testing chamber 18 is measured by the RGA48, and a seventh rotary valve 47 is connected between the RGA48 and the system chamber. The extreme ultraviolet photoresist outgassing pollution test system has Xe, ar and N in common 2 Three high-purity working gases, wherein the first gas bottle 21 is used for supplying Xe gas which is a working gas required by the discharge of an extreme ultraviolet light source; the second gas cylinder 30 is used for supplying Ar gas, which is a purge gas required for reducing the chipping structure 3; the fourth gas cylinder 53 is used for supplying N 2 Filling the system with Ar gas before opening the vacuum system; the third gas cylinder 40 is used to supply Ar gas, which is a purge gas that contaminates the purge structure. The first pressure reducing valve 20, the second pressure reducing valve 29, the third pressure reducing valve 39 and the fourth pressure reducing valve 52 are connected to the respective gas cylinder ports, and are connected to the vacuum chamber through the first gas flow regulating valve 19, the second gas flow regulating valve 28, the third gas flow regulating valve 38 and the fourth gas flow regulating valve 51. The gas regulating valve can accurately regulate and control the gas flow.
The test process of the extreme ultraviolet irradiation photoresist outgassing pollution test system provided by the invention is as follows:
first, the system is evacuated. Installing a verification sample wafer 14, installing a silicon wafer 16 coated with photoresist on a silicon wafer motion control carrying platform 17, and closingContaminating the sample testing chamber 18 chamber. The first gate valve 24, the second gate valve 31, the third gate valve 43, the fourth gate valve 54 and the first gate valve 4 are opened, the first mechanical pump 27, the second mechanical pump 34, the third mechanical pump 46 and the fourth mechanical pump 57 are started to vacuumize, the second rotary valve 26, the third rotary valve 33, the sixth rotary valve 45, the ninth rotary valve 56, the first rotary valve 22, the fourth rotary valve 36, the fifth rotary valve 41 and the eighth rotary valve 49 are opened, and the first vacuum gauge 23, the second vacuum gauge 37, the third vacuum gauge 42 and the fourth vacuum gauge 50 are started to observe the air pressure in each cavity in real time. Because the photoresist sample with a high outgassing rate is arranged in the contaminated sample testing chamber 18, in order to avoid the contamination to the light collecting chamber 6, the second gate valve 11 between the two chambers is not opened at this time, and the two chambers are respectively vacuumized. And (3) opening the first bypass angle-drawing valve 35 to accelerate the air-drawing speed until the vacuum degree of the light collection chamber 6 is reduced to dozens of Pa, closing the first bypass angle-drawing valve 35 when the vacuum degrees of the first vacuum gauge 23, the second vacuum gauge 37 and the third vacuum gauge 42 of the three vacuum gauges reach dozens of Pa, and starting the first molecular pump 25, the second molecular pump 32 and the third molecular pump 44 to further vacuum the extreme ultraviolet light source system 1 and the light collection chamber 6. When the vacuum degree of the contaminated sample test chamber 18 decreases to several tens of Pa, the second side angle-pumping valve 58 is opened, and when the vacuum degree decreases to several tens of Pa, the second side angle-pumping valve 58 is closed, and the fourth sub-pump 55 is started. When the vacuum degree of the light collection chamber 6 is less than 10 -4 Pa and the degree of vacuum of the contaminated sample testing chamber 18 is less than 10 -3 Pa, the vacuum condition of the experimental test can be reached.
Then, the pollutants are purified and regulated. The second molecular pump 32, the second gate valve 31, the third rotary valve 33 and the second mechanical pump 34 are closed so that the light collection chamber 6 is evacuated only by the third mechanical pump 46 and the third molecular pump 44. The second gate valve 11 is opened to place the light collection chamber 6 and the contaminated sample testing chamber 18 in communication. The gas in the third gas cylinder 40 sequentially enters the light collection chamber 6 through the third pressure reducing valve 39, the third gas flow regulating valve 38 and the purified gas inlet 9, and is pumped out through the purified gas outlet 10 by the third mechanical pump 46 and the third molecular pump 44, so that a gas flow in the same direction as the light propagation direction is formed, and the pollutants in the polluted sample test chamber 18 are effectively prevented from being propagated into the light collection chamber 6. The purge gas flow is controlled by the third gas flow control valve 38 and the purge gas pressure is observed by the third vacuum gauge 42, too high a purge gas flow will absorb extreme ultraviolet light and too low a purge gas flow will effectively block the diffusion of contaminants into the light collection chamber 6, so the purge gas pressure is typically between 0.1 and 20Pa, taking into account the light absorption and contaminant blocking effects.
Secondly, adjust the extreme ultraviolet light source system. The second gas cylinder 30 is charged with Ar gas through a second pressure reducing valve 29 and a second gas flow regulating valve 28, and the second gas flow regulating valve 28 is used for controlling the Ar gas flow. Because the Ar gas can absorb extreme ultraviolet light, the energy of the irradiated extreme ultraviolet light can be reduced when the flow rate of the Ar gas is too high, but the debris cannot be effectively blocked when the flow rate of the Ar gas is too low, so that the flow rate of the Ar gas needs to be reasonably set by comprehensively considering the light absorption and debris blocking factors and is generally set between 5 and 200 Pa.L/s. The first gas cylinder 21 fills Xe gas, which is generally set at several tens of standard milliliters per minute (sccm), as a working gas into the euv light source system 1 through the first pressure reducing valve 20, and the Xe gas flow is controlled through the first gas flow regulating valve 19. After setting water, electricity and gas of the extreme ultraviolet light source, the extreme ultraviolet light source is started to generate light irradiation, and each parameter of the light source is adjusted to enable the extreme ultraviolet light source to work in a better working state.
Finally, the air release and pollution characteristic test is carried out. The seventh rotary valve 47 is opened to activate the RGA48, and the test analysis shutter 12 is closed, and the contaminated sample testing chamber 18 is exposed to extreme ultraviolet light, the contaminant component C1 and the pressure Q1 in the chamber. Opening a shutter 12, transmitting extreme ultraviolet light and irradiating the silicon wafer 16 coated with photoresist, starting irradiation and timing, adjusting the silicon wafer 16 coated with the photoresist through a silicon wafer moving carrier 17, so that irradiation light is irradiated to the next unirradiated area at regular intervals, setting the interval time according to experimental research requirements, such as 5s, 10s, 15s, 20s and the like, closing the shutter 12 when the total irradiation time reaches the preset time, such as 30min, 1h, 2h and the like, and analyzing the pollutant components C2 and pressure in the cavity after the irradiation of the extreme ultraviolet light through an RGA48 testStrong Q2, closes the seventh rotary valve 47, stopping the RGA48. And stopping discharging of the extreme ultraviolet light source system, stopping gas supply of the first gas cylinder 21, the second gas cylinder 30 and the third gas cylinder 40, and closing the first pressure reducing valve 20, the second pressure reducing valve 29, the third pressure reducing valve 39, the first gas flow regulating valve 19, the second gas flow regulating valve 28 and the third gas flow regulating valve 38. And (3) closing the first gate valve 4 and the second gate valve 11, stopping the first molecular pump 25, the third molecular pump 44 and the fourth molecular pump 55, and closing the first gate valve 24, the third gate valve 43, the fourth gate valve 54, the second rotary valve 26, the sixth rotary valve 45 and the ninth rotary valve 56. A fourth gas bottle 53 charges the contaminated sample testing chamber 18 with N through a fourth pressure reducing valve 52 2 The fourth gas flow regulating valve 51 controls the inflation rate, so that the change rate of the gas pressure in the cavity is lower than 100Pa/s, and the damage to the optical filter 13 caused by the overlarge change rate of the gas pressure is avoided. When the air pressure in the cavity is filled to be one atmosphere, the air filling is stopped, the fourth pressure reducing valve 52 and the fourth gas flow regulating valve 51 are closed, the cavity of the contaminated sample testing chamber 18 is opened, and the photoresist outgassing contamination characteristic verification sample wafer 14 is taken out. Analyzing the outgassing characteristics of the photoresist caused by the irradiation of extreme ultraviolet light through the change conditions of pollutant components C1 and C2 and pressure intensities Q1 and Q2 tested by the RGA48 in the test process; and evaluating the gas-releasing pollution characteristic condition of the photoresist caused by extreme ultraviolet irradiation through the performance analysis of the verification sample wafer 14, such as the thickness and component analysis of surface pollutants, the reflectivity change condition analysis and the like.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. An extreme ultraviolet radiation induced photoresist outgassing contamination test system, which is characterized by comprising an extreme ultraviolet light source chamber (1), a light collection chamber (6), a contamination sample test chamber (18), wherein:
an extreme ultraviolet light source chamber (1) for emitting irradiation light;
the light collection chamber (6) is used for reflecting and focusing the irradiation light emitted by the extreme ultraviolet light source chamber (1) into the contaminated sample testing chamber (18);
the contaminated sample testing chamber (18) is used for testing the influence of the outgassing contamination characteristic of the photoresist under the irradiation of extreme ultraviolet light on the performance of system components under the action of irradiation light transmitted by the light collecting chamber (6); the contaminated sample testing chamber (18) comprises a shutter (12), an optical filter (13), a verification sample wafer (14), a reflector (15) and a motion control carrying platform (17) which are sequentially arranged along the direction of an optical path; the shutter (12) is used for controlling the irradiation dose of the surface of the photoresist, the optical filter (13) is used for filtering out extreme ultraviolet light, the verification sample wafer (14) is used for reflecting the extreme ultraviolet light to the reflector (15) and then is reflected and irradiated to the silicon wafer (16) coated with the photoresist by the reflector (15) again, the verification sample wafer (14) is also used for evaluating the pollution characteristic of the photoresist, and the condition of the gas release pollution characteristic of the photoresist caused by the extreme ultraviolet light irradiation is evaluated through the thickness and component analysis and the reflectivity change condition analysis of surface pollutants of the verification sample wafer (14); the motion control stage (17) is used for loading a silicon wafer (16) coated with photoresist;
wherein the light collection chamber (6) is provided with a purified gas inlet (9) and a purified gas outlet (10), and the purified gas flows between the purified gas inlet (9) and the purified gas outlet (10) to form a gas flow in the same direction as the propagation direction of the light and is used for blocking the pollutants in the polluted sample testing chamber (18) from propagating into the light collection chamber (6).
2. The system for testing outgassing contamination of photoresist due to extreme ultraviolet light irradiation according to claim 1, wherein the extreme ultraviolet light source chamber (1) has an irradiation light source (2), the irradiation light source (2) is used for emitting irradiation light, and the emitted irradiation light enters the light collection chamber (6) through the light path outlet of the extreme ultraviolet light source chamber (1) and the light path inlet of the light collection chamber (6) in sequence.
3. The system for testing outgassing of photoresist according to claim 1, wherein the system further comprises a debris reducing structure (3) between the euv light source chamber (1) and the light collecting chamber (6), wherein the debris reducing structure (3) is located at a side of the first gate valve (4) adjacent to the euv light source chamber (1) for preventing debris generated by the euv light source chamber (1) from passing into the light collecting chamber (6) and contaminating the sample testing chamber (18).
4. The EUV radiation-induced photoresist outgassing contamination test system of claim 3, wherein the debris reduction structure (3) prevents debris generated by the EUV light source chamber (1) from passing into the light collection chamber (6) and contaminating the sample testing chamber (18) by means of gas purging.
5. The system for testing outgassing contamination of photoresist due to extreme ultraviolet light irradiation of claim 1, wherein the light collection chamber (6) comprises a mirror adjustment stage (7) and a reflection collection mirror (8), the reflection collection mirror (8) being mounted on the mirror adjustment stage (7).
6. The EUV radiation induced photoresist outgassing contamination test system of claim 5, wherein the reflective collector mirror (8) is used to collect the irradiated light in a specific solid angle, so as to achieve the function of reflective focusing, and reflect the irradiated light into the contaminated sample test chamber (18), and meanwhile, the reflective collector mirror (8) is also used to filter out the EUV light with a central wavelength of 13.5 nm.
7. The system for testing outgassing contamination of photoresist due to extreme ultraviolet light irradiation of claim 1,
the system also comprises a first gate valve (4) between the extreme ultraviolet light source cavity (1) and the light collection cavity (6), wherein the first gate valve (4) is used for controlling the connection and disconnection of the extreme ultraviolet light source cavity (1) and the light collection cavity (6);
the system also comprises a second gate valve (11) between the light collection chamber (6) and the contaminated sample testing chamber (18), wherein the second gate valve (11) is used for controlling the on-off of the light collection chamber (6) and the contaminated sample testing chamber (18).
8. The system for testing outgassing contamination of photoresist due to extreme ultraviolet light irradiation according to claim 1, wherein the extreme ultraviolet light source chamber (1), the light collection chamber (6), and the contamination sample testing chamber (18) are all high vacuum chambers.
9. The extreme ultraviolet radiation-induced photoresist outgassing contamination testing system of claim 1, wherein the contamination sample testing chamber (18) further comprises an RGA (48), the RGA (48) being used to test photoresist outgassing characteristics.
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