CN110875518A - 8 trapped wave ultra wide band antenna structure of nested rectangle and E type structure - Google Patents

8 trapped wave ultra wide band antenna structure of nested rectangle and E type structure Download PDF

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CN110875518A
CN110875518A CN201911360661.4A CN201911360661A CN110875518A CN 110875518 A CN110875518 A CN 110875518A CN 201911360661 A CN201911360661 A CN 201911360661A CN 110875518 A CN110875518 A CN 110875518A
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band gap
gap structure
electromagnetic band
branch
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CN110875518B (en
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王代强
罗双
王新峰
李伟民
陈红
李烨君
刘江涛
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Guizhou Minzu University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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Abstract

The invention discloses an 8 trapped wave ultra wide band antenna structure with nested rectangular and E-shaped structures, wherein the upper part and the lower part of the right side of a microstrip feeder line are respectively provided with a complementary E-shaped electromagnetic band gap structure and a first E-shaped electromagnetic band gap structure, and the left side of the microstrip feeder line is provided with a second E-shaped electromagnetic band gap structure; the complementary E-type electromagnetic bandgap structure comprises: the electromagnetic band gap structure comprises an outer E-shaped electromagnetic band gap structure and an inner E-shaped electromagnetic band gap structure, wherein the opening of the outer E-shaped electromagnetic band gap structure faces to the right, the opening of the inner E-shaped electromagnetic band gap structure faces to the left, and the inner E-shaped electromagnetic band gap structure is surrounded by the outer E-shaped electromagnetic band gap structure. The problem that in the prior art, when narrowband signals of 8 frequency bands in an ultra-wideband system are filtered, a band-stop filter is needed to be used for restraining, but the size, the manufacturing cost and the complexity of an antenna are increased by using the band-stop filter is solved.

Description

8 trapped wave ultra wide band antenna structure of nested rectangle and E type structure
Technical Field
The invention relates to the technical field of radio, in particular to an 8-notch ultra-wideband antenna structure with nested rectangular and E-shaped structures.
Background
In recent years, research on Ultra-Wideband (Ultra-Wideband) antennas is receiving more and more attention, and particularly, after FCC stipulates a 3.1 to 10.6GHz band as a civil band in 2002, an Ultra-Wideband antenna of the band is developed, and the band is overlapped with some applied bands, such as narrowband signals of WiMAX band uplink frequency and downlink frequency, isat band uplink frequency and downlink frequency, WLAN band uplink frequency and downlink frequency, and X band uplink frequency and downlink frequency, and the Ultra-Wideband signal may generate electromagnetic interference to the narrowband signal systems. To filter these interferences, a band-stop filter is usually used to suppress the interferences, but the size, cost and complexity of the antenna are increased by using the band-stop filter.
Disclosure of Invention
To address the above shortcomings and deficiencies of the prior art, it is a primary object of the present invention to provide an 8-notch ultra-wideband antenna structure of nested rectangular and E-shaped configurations.
The technical scheme of the invention is as follows: an 8-notch ultra-wideband antenna structure of nested rectangular and E-shaped structures, comprising:
a dielectric substrate;
the metal grounding surface covers the lower surface of the dielectric substrate;
the radiation patch is covered on the upper surface of the dielectric substrate, the radiation patch is bilaterally symmetrical by taking a vertical central axis of the dielectric substrate as a central axis, the radiation patch is made of metal, a first rectangular open-loop resonator is arranged in the radiation patch, and a second rectangular open-loop resonator is arranged on the radiation patch in the first rectangular open-loop resonator;
the upper part and the lower part on the right side of the microstrip feeder are respectively provided with a complementary E-shaped electromagnetic band gap structure and a first E-shaped electromagnetic band gap structure, and the left side of the microstrip feeder is provided with a second E-shaped electromagnetic band gap structure;
the complementary E-type electromagnetic bandgap structure comprises: the electromagnetic band gap structure comprises an outer E-shaped electromagnetic band gap structure and an inner E-shaped electromagnetic band gap structure, wherein the opening of the outer E-shaped electromagnetic band gap structure faces to the right, the opening of the inner E-shaped electromagnetic band gap structure faces to the left, and the inner E-shaped electromagnetic band gap structure is surrounded by the outer E-shaped electromagnetic band gap structure.
Further, the radiation patch includes:
the upper rectangular patch is 10.4mm in length from top to bottom and 14mm in length from left to right, the first rectangular open-loop resonator is arranged in the upper rectangular patch, and the upper edge of the first rectangular open-loop resonator and the upper edge of the upper rectangular patch are connected;
the upper edge of the second rectangular open-loop resonator is parallel to the upper edge of the upper rectangular patch.
Further, the radiation patch further includes:
lower trapezoidal paster, down trapezoidal paster long limit is the same with last rectangle paster lower part edge, and lower trapezoidal paster long limit aligns and connects as an organic wholely with last rectangle paster lower part edge, and lower trapezoidal paster short length of side is 7mm, and lower trapezoidal paster height is 5.6mm, and microstrip feeder upper end is connected with lower trapezoidal paster lower part edge electricity.
Further, Roggers5880 is adopted as the dielectric substrate material, the thickness is 0.8mm, the length is 36mm, and the width is 32 mm;
the width of the microstrip feeder line is 2mm, the length of the microstrip feeder line is 20mm, and the resistance of the microstrip feeder line is 50 omega;
the total length of the first rectangular open-loop resonator is 34 mm;
the total length of the second rectangular open-loop resonator is 32 mm;
the total length of the upper branch, the connecting branch and the lower branch of the outer E-shaped electromagnetic band gap structure is 18.2mm, the middle branch of the outer E-shaped electromagnetic band gap structure is electrically connected with a metal grounding surface through a first metal column, the right end of the upper branch of the outer E-shaped electromagnetic band gap structure is integrally connected with a vertically downward vertical branch, the right end of the lower branch of the outer E-shaped electromagnetic band gap structure is integrally connected with a vertically downward upward vertical branch, the length of the vertical branch is 1.1mm, and the length of the vertical branch is 1.3 mm;
the total length of the upper branch, the connecting branch and the lower branch of the inner E-shaped electromagnetic band gap structure is 11.4mm, and the middle branch of the inner E-shaped electromagnetic band gap structure is electrically connected with the metal grounding surface through a second metal column;
the opening of the first E-shaped electromagnetic band gap structure faces the right, the total length of the upper branch, the connecting branch and the lower branch of the first E-shaped electromagnetic band gap structure is 15mm, and the first E-shaped electromagnetic band gap structure is electrically connected with the metal grounding surface through a third metal column;
the opening of the second E-shaped electromagnetic band gap structure faces to the left, the total length of the upper branch, the connecting branch and the lower branch of the second E-shaped electromagnetic band gap structure is 23.4mm, and the first E-shaped electromagnetic band gap structure is electrically connected with the metal grounding surface through a fourth metal column;
the diameters of the first metal column, the second metal column, the third metal column and the fourth metal column are 0.3 mm.
Furthermore, the upper branch and the lower branch of the outer E-shaped electromagnetic band gap structure have the same length;
the upper branch and the lower branch of the inner E-shaped electromagnetic band gap structure are the same in length, the middle branch of the inner E-shaped electromagnetic band gap structure and the middle branch of the outer E-shaped electromagnetic band gap structure are on the same straight line, and the distance between the left end of the middle branch of the inner E-shaped electromagnetic band gap structure and the right end of the middle branch of the outer E-shaped electromagnetic band gap structure is 1.2 mm;
the upper branches and the lower branches of the first E-type electromagnetic band gap structure are the same in length;
the upper branches and the lower branches of the second E-type electromagnetic band gap structure are the same in length.
Further, the length of the connecting branch of the outer E-shaped electromagnetic band gap structure is 6.2 mm;
the length of the connecting branch of the inner E-shaped electromagnetic band gap structure is 4 mm;
the length of the connecting branch of the first E-type electromagnetic band gap structure is 5 mm;
the length of the connecting branch of the second E-type electromagnetic band gap structure is 8 mm.
Furthermore, the length of the middle branch of the outer E-shaped electromagnetic band gap structure is 1.5mm, and the distance between the first metal column and the microstrip feeder line is 1.88 mm;
the length of a middle branch of the inner E-shaped electromagnetic band gap structure is 1.2mm, and the distance between the second metal column and the microstrip feeder line is 4.21 mm;
the length of a middle branch of the first E-type electromagnetic band gap structure is 2.6mm, and the distance between the third metal column and the microstrip feeder line is 2.05 mm;
the length of the middle branch of the second E-type electromagnetic band gap structure is 1.3mm, and the distance between the fourth metal column and the microstrip feeder line is 1.45 mm.
Furthermore, the distance between the outer E-shaped electromagnetic band gap structure and the microstrip feeder line is 0.3 mm;
the distance between the first E-type electromagnetic band gap structure and the microstrip feeder line is 0.3 mm;
the distance between the second E-type electromagnetic band gap structure and the microstrip feeder line is 0.45 mm.
Further, the slot width of the first rectangular open-loop resonator is 0.4 mm;
the width of the second rectangular open-loop resonator is 0.2 mm;
the branch node of the outer E-shaped electromagnetic band gap structure is 0.3mm wide;
the branch of the inner E-shaped electromagnetic band gap structure is 0.3mm wide;
the branch node of the first E-type electromagnetic band gap structure is 0.3mm wide;
and the branch node of the second E-type electromagnetic band gap structure is 0.3mm wide.
Furthermore, the left-right distance between the second rectangular open-loop resonator and the first rectangular open-loop resonator is 0.1mm, the up-down distance between the second rectangular open-loop resonator and the first rectangular open-loop resonator is 0.6mm, the distance between the first E-type electromagnetic band gap structure and the lower edge of the dielectric substrate is 9.7mm, the distance between the complementary E-type electromagnetic band gap structure and the first E-type electromagnetic band gap structure is 5mm, and the distance between the second E-type electromagnetic band gap structure and the lower edge of the dielectric substrate is 3.5 mm.
The invention has the beneficial effects that: compared with the prior art, the invention has the following advantages:
1) the first rectangular open-loop resonator, the second rectangular open-loop resonator, the complementary E-type electromagnetic band gap structure, the first E-type electromagnetic band gap structure and the second E-type electromagnetic band gap structure are used for realizing 8 trapped waves, namely, the trapped wave function can be realized on narrow-band signals of 8 frequency bands at the same time, and because the radiation patch and the trapped wave structure are printed on the medium substrate only by a printed circuit board process or an integrated circuit process, the invention has smaller size, low complexity and low manufacturing cost, and is convenient to integrate into communication equipment;
2) the complementary E-shaped electromagnetic band gap structure and the first E-shaped electromagnetic band gap structure are arranged on the right side of the microstrip feeder line, and the second E-shaped electromagnetic band gap structure is arranged on the left side of the microstrip feeder line, so that the problem that the structure is not compact enough when all the electromagnetic band gap structures are arranged on one side is solved, and the problems that the return loss S11< -10dB and the voltage standing wave ratio VSWR <2 of the antenna in a 2.8GHz-12GHz frequency band are caused by mutual coupling among the electromagnetic band gap structures are solved, so that the problem that the energy radiation efficiency of the 2.8GHz-12GHz frequency band is not high is solved.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a return loss curve simulated by HFSS15.0 software according to the present invention;
FIG. 3 is a graph of the VSWR of the present invention simulated by the HFSS15.0 software.
Detailed Description
The invention will be further described with reference to the following drawings and specific embodiments:
example 1 was carried out: referring to fig. 1, an 8-notch ultra-wideband antenna structure of a nested rectangular and E-shaped structure, comprising: a dielectric substrate 4; the metal grounding surface 5, the metal grounding surface 5 covers the lower surface of the dielectric substrate 4; the radiation patch 1 is covered on the upper surface of the dielectric substrate 4, the radiation patch 1 is symmetrical left and right by taking a vertical central axis of the dielectric substrate 4 as a central axis, the radiation patch 1 is made of metal, a first rectangular open-loop resonator 2 is arranged in the radiation patch 1, and a second rectangular open-loop resonator 3 is arranged on the radiation patch 1 in the first rectangular open-loop resonator 2; the microstrip feeder line 11 covers the upper surface of the dielectric substrate 4, the upper end of the microstrip feeder line 11 is electrically connected with the radiation patch 1, the central axis of the microstrip feeder line 11 is superposed with the vertical central axis of the dielectric substrate 4, the upper part and the lower part of the right side of the microstrip feeder line 11 are respectively provided with a complementary E-shaped electromagnetic band gap structure 6 and a first E-shaped electromagnetic band gap structure 9, and the left side of the microstrip feeder line 11 is provided with a second E-shaped electromagnetic band gap structure 12; the complementary E-type electromagnetic bandgap structure 6 comprises: the electromagnetic band gap structure comprises an outer E-shaped electromagnetic band gap structure 601 and an inner E-shaped electromagnetic band gap structure 602, wherein the opening of the outer E-shaped electromagnetic band gap structure 601 faces to the right, the opening of the inner E-shaped electromagnetic band gap structure 602 faces to the left, and the inner E-shaped electromagnetic band gap structure 602 is surrounded by the outer E-shaped electromagnetic band gap structure 601.
The radiation patch 1 is a sheet made of metal, the first rectangular open-loop resonator 2 and the second rectangular open-loop resonator 3 are rectangular slots formed in the radiation patch 1, the rectangular slots are open loops, and two ends of each rectangular slot are not communicated. The complementary E-type electromagnetic bandgap structure 6, the first E-type electromagnetic bandgap structure 9 and the second E-type electromagnetic bandgap structure 12 are thin sheets of metal material. The metal ground plane 5 is a thin sheet made of metal. The microstrip feed line 11 is a thin sheet made of metal. The invention is obtained by etching on the dielectric substrate 4 by utilizing a printed circuit board process or an integrated circuit process.
The length of each open-loop resonator and each E-type electromagnetic bandgap structure is determined by the following formula:
Figure BDA0002337086980000051
where c is the speed of light, fnotchBy notching the central frequency,. epsilonreffIs an effective dielectric constant,. epsilonrIs the dielectric constant of the substrate, h is the thickness of the substrate, ωfThe width of the microstrip line is L, and the length of each open-loop resonator or each U-shaped parasitic strip is L.
The first rectangular open-loop resonator 2, the second rectangular open-loop resonator 3, the complementary E-type electromagnetic band gap structure 6, the first E-type electromagnetic band gap structure and the second E-type electromagnetic band gap structure realize 8 trapped waves, namely, the trapped wave function can be realized on narrow-band signals of 8 frequency bands at the same time, and because the radiation patch and the trapped wave structure are printed on the dielectric substrate 4 only by a printed circuit board process or an integrated circuit process, the invention has smaller size, low complexity, convenient integration into communication equipment and low manufacturing cost; the complementary E-shaped electromagnetic band gap structure 6 and the first E-shaped electromagnetic band gap structure 9 are arranged on the right side of the microstrip feeder line, and the second E-shaped electromagnetic band gap structure 12 is arranged on the left side of the microstrip feeder line 11, so that the problem that the structure is not compact enough when all the electromagnetic band gap structures are arranged on one side is solved, and the problems that the return loss S11< -10dB and the voltage standing wave ratio VSWR <2 of the antenna in a 2.8GHz-12GHz frequency band are caused by mutual coupling among the electromagnetic band gap structures, and the energy radiation efficiency of the 2.8GHz-12GHz frequency band is not high are solved.
Further, the radiation patch 1 includes: the upper rectangular patch 101 is 10.4mm long in the vertical direction, 14mm long in the left-right direction of the upper rectangular patch 101, the first rectangular open-loop resonator 2 is arranged in the upper rectangular patch 101, and the upper edge of the first rectangular open-loop resonator 2 and the upper edge of the upper rectangular patch 101 are connected; the upper edge of the second rectangular open-loop resonator 3 is parallel to the upper edge of the upper rectangular patch 101.
The upper rectangular patch 101 has the effects that the upper rectangular patch 101 and the first rectangular open-loop resonator 2 are both rectangular, the open-loop resonators in different shapes are obtained through simulation of HFSS15.0, and when the shapes are similar, the first rectangular open-loop resonator 2 can generate strong resonance on a specific frequency band, so that the return loss of the frequency band corresponding to the first rectangular open-loop resonator 2 is increased, the voltage standing wave ratio is increased, and the trap characteristic of the corresponding frequency band is enhanced. Similarly, the second rectangular open-loop resonator 3 is also rectangular, so that the return loss of the frequency band corresponding to the second rectangular open-loop resonator 3 is increased, the voltage standing wave ratio is increased, and the trap characteristic of the corresponding frequency band is enhanced.
Further, the radiation patch 1 further includes: the long side of the lower trapezoidal patch 102 is the same as the lower edge of the upper rectangular patch 101, the long side of the lower trapezoidal patch 102 is aligned with the lower edge of the upper rectangular patch 101 and is connected into a whole, the short side of the lower trapezoidal patch 102 is 7mm, the height of the lower trapezoidal patch 102 is 5.6mm, and the upper end of the microstrip feeder line 11 is electrically connected with the lower edge of the lower trapezoidal patch 102.
The lower trapezoidal patch 102 plays a role in widening the total frequency band of the antenna, which can be obtained through HFSS15.0 simulation, the total bandwidth of the antenna changes under the condition that the lower trapezoidal patch 102 exists and the lower trapezoidal patch 102 does not exist, the bandwidth of the antenna is wider under the condition that the lower trapezoidal patch 102 exists, and the bandwidth of the antenna is smaller under the condition that the lower trapezoidal patch 102 does not exist.
Further, Roggers5880 is adopted as the material of the dielectric substrate 4, the thickness is 0.8mm, the length is 36mm, and the width is 32 mm; the width of the microstrip feeder line 11 is 2mm, the length is 20mm, and the resistance is 50 omega; the total length of the first rectangular open-loop resonator 2 is 34 mm; the total length of the second rectangular open-loop resonator 3 is 32 mm; the total length of the upper branch, the connecting branch and the lower branch of the outer E-shaped electromagnetic band gap structure 601 is 18.2mm, the middle branch of the outer E-shaped electromagnetic band gap structure 601 is electrically connected with the metal grounding surface 5 through the first metal column 8, the right end of the upper branch of the outer E-shaped electromagnetic band gap structure 601 is integrally connected with a vertically downward drooping branch, the right end of the lower branch of the outer E-shaped electromagnetic band gap structure 601 is integrally connected with a vertically downward upper drooping branch, the length of the drooping branch is 1.1mm, and the length of the upper drooping branch is 1.3 mm; the total length of the upper branch, the connecting branch and the lower branch of the inner E-shaped electromagnetic band gap structure 602 is 11.4mm, and the middle branch of the inner E-shaped electromagnetic band gap structure 602 is electrically connected with the metal grounding surface 5 through the second metal column 7; the opening of the first E-shaped electromagnetic band gap structure 9 faces to the right, the total length of the upper branch, the connecting branch and the lower branch of the first E-shaped electromagnetic band gap structure 9 is 15mm, and the first E-shaped electromagnetic band gap structure 9 is electrically connected with the metal grounding surface 5 through a third metal column 10; the opening of the second E-shaped electromagnetic band gap structure 12 faces to the left, the total length of the upper branch, the connecting branch and the lower branch of the second E-shaped electromagnetic band gap structure 12 is 23.4mm, and the first E-shaped electromagnetic band gap structure 9 is electrically connected with the metal grounding surface 5 through the fourth metal column 13; the diameters of the first metal pillar 8, the second metal pillar 7, the third metal pillar 10 and the fourth metal pillar 13 are 0.3 mm.
The functions are as follows:
1) the antenna can generate a notch effect on frequency bands of 3.50-3.54GHz, 3.80-4.11GHz, 4.17-4.28GHz, 4.46-4.72GHz, 4.89-5.13GHz, 5.51-5.83GHz, 5.87-6.74GHz and 8.08-8.82 GHz;
2) the upper vertical branch extends upwards by 1.3mm vertically, the lower vertical branch extends downwards vertically to enable 1.1mm to enhance the electromagnetic coupling between the outer E-shaped electromagnetic band gap structure 601 and the inner E-shaped electromagnetic band gap structure 602, so that the corresponding notch frequency (namely the return loss S11 of the narrow-band frequency to be filtered is increased, the voltage standing wave ratio VSWR is increased, the notch effect on the corresponding frequency is improved, and the whole structure of the antenna is more compact, the upper vertical branch extends upwards by 1.3mm vertically through simulation of the upper vertical branch and the lower vertical branch with different lengths and different extension directions by HFSS15.0, and the notch effect on the corresponding frequency by 1.1mm is enabled to be the best by the lower vertical branch;
3) the first metal column 8, the second metal column 7, the third metal column 10 and the fourth metal column 13 enable trapped waves generated by other trapped wave structures to be branched, and the total number of the trapped waves of the antenna is 8;
4) the diameters of the first metal column 8, the second metal column 7, the third metal column 10 and the fourth metal column 13 are set to be 0.3mm, so that the return loss S11 and the voltage standing wave ratio VSWR of the notch frequency (namely the narrow-band frequency to be filtered) branched by the metal columns are increased, and meanwhile, the requirements of the return loss S11< -10db and the voltage standing wave ratio VSWR <2 which are met by other parts except the notch frequency are also met, and the notch effect on the corresponding frequency and the radiation efficiency on the frequencies except the notch frequency are improved.
Further, the upper branch and the lower branch of the outer E-shaped electromagnetic band gap structure 601 have the same length; the upper branch and the lower branch of the inner E-shaped electromagnetic band gap structure 602 are the same in length, the middle branch of the inner E-shaped electromagnetic band gap structure 602 and the middle branch of the outer E-shaped electromagnetic band gap structure 601 are on the same straight line, and the distance between the left end of the middle branch of the inner E-shaped electromagnetic band gap structure 602 and the right end of the middle branch of the outer E-shaped electromagnetic band gap structure 601 is 1.2 mm; the upper branches and the lower branches of the first E-type electromagnetic band gap structure 9 are the same in length; the upper branch and the lower branch of the second E-type electromagnetic bandgap structure 12 have the same length.
The effect is that:
1) the upper branches and the lower branches with different lengths are simulated through HFSS15.0, and the electromagnetic coupling of the E-type electromagnetic band gap structure to other notch structures is minimum when the lengths of the upper branches and the lower branches of the E-type electromagnetic band gap structure are the same;
2) the distance between the left end of the middle branch of the different E-shaped electromagnetic band gap structures 602 and the right end of the middle branch of the outer E-shaped electromagnetic band gap structure 601 is simulated through HFSS15.0, and when the distance between the left end of the middle branch of the inner E-shaped electromagnetic band gap structure 602 and the right end of the middle branch of the outer E-shaped electromagnetic band gap structure 601 is set to be 1.2mm, the phases of surface currents on the left end of the middle branch of the inner E-shaped electromagnetic band gap structure 602 and the outer E-shaped electromagnetic band gap structure 601 are just opposite, a phase cancellation effect is generated, a notch characteristic is generated on corresponding frequencies, the return loss S11 of the corresponding notch frequencies (namely narrow band frequencies needing to be filtered) is increased, the voltage standing wave ratio VSWR is increased, and the notch effect on.
Further, the length of the connecting branch of the outer E-shaped electromagnetic band gap structure 601 is 6.2 mm; the length of the connecting branch of the inner E-shaped electromagnetic band gap structure 602 is 4 mm; the length of the connecting branch of the first E-type electromagnetic band gap structure 9 is 5 mm; the length of the connecting branch of the second E-type electromagnetic band gap structure 12 is 8 mm.
The functions are as follows:
different grafting lengths are simulated through HFSS15.0, and under the grafting lengths, the return loss S11 of the frequency band of 2.8GHz-12GHz except the corresponding notch frequency (namely the narrow-band frequency needing to be filtered) is minimum, and the voltage standing wave ratio VSWR is minimum.
Further, the length of the middle branch of the outer E-shaped electromagnetic band gap structure 601 is 1.5mm, and the distance between the first metal column 8 and the microstrip feeder line 11 is 1.88 mm; the length of the middle branch of the inner E-shaped electromagnetic band gap structure 602 is 1.2mm, and the distance between the second metal column 7 and the microstrip feeder line 11 is 4.21 mm; the length of the middle branch of the first E-type electromagnetic band gap structure 9 is 2.6mm, and the distance between the third metal column 10 and the microstrip feeder line 11 is 2.05 mm; the length of the middle branch of the second E-type electromagnetic band gap structure 12 is 1.3mm, and the distance between the fourth metal column 13 and the microstrip feeder line 11 is 1.45 mm. .
The effect is that:
different mid-branch lengths are simulated through HFSS15.0, and the frequency band corresponding to the notch frequency (namely the narrow-band frequency to be filtered) is widened under the condition that the return loss S11< -5db and the voltage standing wave ratio VSWR >9 of the corresponding notch frequency (namely the narrow-band frequency to be filtered) and the return loss S11< -10db and the voltage standing wave ratio VSWR <2 of the frequency band of 2.8GHz-12GHz except the corresponding notch frequency (namely the narrow-band frequency to be filtered) are ensured.
Further, the distance between the outer E-shaped electromagnetic band gap structure 601 and the microstrip feeder line 11 is 0.3 mm; the distance between the first E-type electromagnetic band gap structure 9 and the microstrip feeder line 11 is 0.3 mm; the distance between the second E-type electromagnetic band gap structure 12 and the microstrip feeder line 11 is 0.45 mm.
The effect is that:
different distances and the distances between the E-type electromagnetic bandgap structure and the microstrip feeder line 11 are simulated through HFSS15.0, so that the return loss S11> -5db and the voltage standing wave ratio VSWR >9 of the trapped wave generated by the complementary E-type electromagnetic bandgap structure 6, the first E-type electromagnetic bandgap structure 9 and the second E-type electromagnetic bandgap structure 12 can be ensured under the parameters, and the coupling among the trapped wave structures is minimum.
Further, the slot width of the first rectangular open-loop resonator 2 is 0.4 mm; the groove width of the second rectangular open-loop resonator 3 is 0.2 mm; the branch node width of the outer E-shaped electromagnetic band gap structure 601 is 0.3 mm; the branch of the inner E-shaped electromagnetic band gap structure 602 is 0.3mm wide; the branch node width of the first E-type electromagnetic band gap structure 9 is 0.3 mm; the width of the branch of the second E-type electromagnetic band gap structure 12 is 0.3 mm.
The effect is that:
the simulation of different branch widths of the E-type electromagnetic bandgap structure is carried out by HFSS15.0, under the above parameters, the notch bandwidths generated by the notch structures are wide enough but not too close to each other, and the return loss S11< -10db and the voltage standing wave ratio VSWR <2 of the frequency band of 2.8GHz-12GHz except the corresponding notch frequency (i.e. the narrow-band frequency to be filtered) are obtained.
Furthermore, the left-right distance between the second rectangular open-loop resonator 3 and the first rectangular open-loop resonator 2 is 0.1mm, the up-down distance between the second rectangular open-loop resonator 3 and the first rectangular open-loop resonator 2 is 0.6mm, the distance between the first E-type electromagnetic bandgap structure 9 and the lower edge of the dielectric substrate 4 is 2mm, the distance between the complementary E-type electromagnetic bandgap structure 6 and the first E-type electromagnetic bandgap structure 9 is 5mm, and the distance between the second E-type electromagnetic bandgap structure 12 and the lower edge of the dielectric substrate 4 is 3.5 mm.
Coupling between the notch structures is minimized, and in addition, because the antenna mounting position is possible to be provided with a conductor, in order to avoid coupling generated by too close distance between the first E-shaped electromagnetic bandgap structure 9 and the second E-shaped electromagnetic bandgap structure 12 and the conductor, the distance between the antenna and the lower edge of the dielectric substrate 45 is set, so that the coupling between the antenna and the nearby conductor is minimized under the condition that the antenna meets impedance matching and the size is small enough.
In order to verify the effect of the design of the invention, the invention adopts HFSS15.0 simulation, fig. 2 is a return loss curve obtained by the antenna structure through the HFSS15.0 simulation, fig. 3 is a voltage standing wave ratio curve obtained by the antenna through the HFSS15.0 simulation, and it can be seen from the graph that the return loss S11< -10dB and the voltage standing wave ratio VSWR <2 of the antenna in the frequency band of 2.8GHz-12GHz cover the frequency range of 3.1-10.6 GHz. The return loss S11> -5dB and the voltage standing wave ratio VSWR >9 of the antenna in the frequency bands of 3.50-3.54GHz, 3.80-4.11GHz, 4.17-4.28GHz, 4.46-4.72GHz, 4.89-5.13GHz, 5.51-5.83GHz, 5.87-6.74GHz and 8.08-8.82GHz indicate that a large amount of energy in the frequency bands can not be radiated outwards, the antenna has remarkable trap characteristics and can effectively inhibit the 8 frequency bands.
The trap structure in the present invention is a general term for the first rectangular open-loop resonator 2, the second rectangular open-loop resonator 3, the complementary E-type electromagnetic bandgap structure 6, the first E-type electromagnetic bandgap structure 9, and the second E-type electromagnetic bandgap structure 12.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. An 8-notch ultra-wideband antenna structure of nested rectangular and E-type structures, comprising:
a dielectric substrate (4);
the metal grounding surface (5), the metal grounding surface (5) covers the lower surface of the dielectric substrate (4);
the radiation patch (1) covers the upper surface of the dielectric substrate (4), the radiation patch (1) is symmetrical left and right by taking a vertical central axis of the dielectric substrate (4) as a central axis, the radiation patch (1) is made of metal, a first rectangular open-loop resonator (2) is arranged in the radiation patch (1), and a second rectangular open-loop resonator (3) is arranged on the radiation patch (1) in the first rectangular open-loop resonator (2);
the antenna comprises a micro-strip feeder line (11), wherein the micro-strip feeder line (11) covers the upper surface of a dielectric substrate (4), the upper end of the micro-strip feeder line (11) is electrically connected with a radiation patch (1), the central axis of the micro-strip feeder line (11) is superposed with the vertical central axis of the dielectric substrate (4), the upper part and the lower part of the right side of the micro-strip feeder line (11) are respectively provided with a complementary E-shaped electromagnetic band gap structure (6) and a first E-shaped electromagnetic band gap structure (9), and the left side of the micro-strip feeder line (11) is provided with a second;
the complementary E-type electromagnetic bandgap structure (6) comprises: the electromagnetic band gap structure comprises an outer E-shaped electromagnetic band gap structure (601) and an inner E-shaped electromagnetic band gap structure (602), wherein the opening of the outer E-shaped electromagnetic band gap structure (601) faces to the right, the opening of the inner E-shaped electromagnetic band gap structure (602) faces to the left, and the inner E-shaped electromagnetic band gap structure (602) is surrounded by the outer E-shaped electromagnetic band gap structure (601).
2. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 1, characterized in that the radiating patch (1) comprises:
the upper rectangular patch (101) is 10.4mm long in the vertical direction, the upper rectangular patch (101) is 14mm long in the left-right direction, the first rectangular open-loop resonator (2) is arranged in the upper rectangular patch (101), and the upper edge of the first rectangular open-loop resonator (2) and the upper edge of the upper rectangular patch (101) are connected in series;
the upper edge of the second rectangular open-loop resonator (3) is parallel to the upper edge of the upper rectangular patch (101).
3. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 2, characterized in that the radiating patch (1) further comprises:
lower trapezoidal paster (102), lower trapezoidal paster (102) long limit is the same with last rectangle paster (101) lower part edge, and lower trapezoidal paster (102) long limit aligns and connects as an organic whole with last rectangle paster (101) lower part edge, and lower trapezoidal paster (102) short side length is 7mm, and lower trapezoidal paster (102) height is 5.6mm, and microstrip feeder (11) upper end is connected with lower trapezoidal paster (102) lower part edge electricity.
4. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 3,
the dielectric substrate (4) is made of Roggers5880, the thickness is 0.8mm, the length is 36mm, and the width is 32 mm;
the width of the microstrip feeder line (11) is 2mm, the length is 20mm, and the resistance is 50 omega;
the total length of the first rectangular open-loop resonator (2) is 34 mm;
the total length of the second rectangular open-loop resonator (3) is 32 mm;
the total length of an upper branch, a connecting branch and a lower branch of the outer E-shaped electromagnetic band gap structure (601) is 18.2mm, a middle branch of the outer E-shaped electromagnetic band gap structure (601) is electrically connected with a metal grounding surface (5) through a first metal column (8), the right end of the upper branch of the outer E-shaped electromagnetic band gap structure (601) is integrally connected with a vertically downward drooping branch, the right end of the lower branch of the outer E-shaped electromagnetic band gap structure (601) is integrally connected with a vertically downward upper drooping branch, the length of the drooping branch is 1.1mm, and the length of the upper drooping branch is 1.3 mm;
the total length of an upper branch, a connecting branch and a lower branch of the inner E-shaped electromagnetic band gap structure (602) is 11.4mm, and a middle branch of the inner E-shaped electromagnetic band gap structure (602) is electrically connected with the metal grounding surface (5) through a second metal column (7);
the opening of the first E-shaped electromagnetic band gap structure (9) faces to the right, the total length of an upper branch, a connecting branch and a lower branch of the first E-shaped electromagnetic band gap structure (9) is 15mm, and the first E-shaped electromagnetic band gap structure (9) is electrically connected with the metal grounding surface (5) through a third metal column (10);
the opening of the second E-type electromagnetic band gap structure (12) faces to the left, the total length of an upper branch, a connecting branch and a lower branch of the second E-type electromagnetic band gap structure (12) is 23.4mm, and the first E-type electromagnetic band gap structure (9) is electrically connected with the metal grounding surface (5) through a fourth metal column (13);
the diameters of the first metal column (8), the second metal column (7), the third metal column (10) and the fourth metal column (13) are 0.3 mm.
5. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 4,
the upper branches and the lower branches of the outer E-shaped electromagnetic band gap structure (601) are the same in length;
the upper branch and the lower branch of the inner E-shaped electromagnetic band gap structure (602) are the same in length, the middle branch of the inner E-shaped electromagnetic band gap structure (602) and the middle branch of the outer E-shaped electromagnetic band gap structure (601) are on the same straight line, and the distance between the left end of the middle branch of the inner E-shaped electromagnetic band gap structure (602) and the right end of the middle branch of the outer E-shaped electromagnetic band gap structure (601) is 1.2 mm;
the upper branches and the lower branches of the first E-type electromagnetic band gap structure (9) are the same in length;
the upper branch and the lower branch of the second E-type electromagnetic band gap structure (12) are the same in length.
6. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 5,
the length of the connecting branch of the outer E-shaped electromagnetic band gap structure (601) is 6.2 mm;
the length of a connecting branch of the inner E-shaped electromagnetic band gap structure (602) is 4 mm;
the length of the connecting branch of the first E-type electromagnetic band gap structure (9) is 5 mm;
the length of the connecting branch of the second E-type electromagnetic band gap structure (12) is 8 mm.
7. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 6,
the length of a middle branch of the outer E-shaped electromagnetic band gap structure (601) is 1.5mm, and the distance between the first metal column (8) and the microstrip feeder line (11) is 1.88 mm;
the length of a middle branch of the inner E-shaped electromagnetic band gap structure (602) is 1.2mm, and the distance between the second metal column (7) and the microstrip feeder line (11) is 4.21 mm;
the length of a middle branch of the first E-shaped electromagnetic band gap structure (9) is 2.6mm, and the distance between the third metal column (10) and the microstrip feeder line (11) is 2.05 mm;
the length of the middle branch of the second E-shaped electromagnetic band gap structure (12) is 1.3mm, and the distance between the fourth metal column (13) and the microstrip feeder line (11) is 1.45 mm.
8. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 7,
the distance between the outer E-shaped electromagnetic band gap structure (601) and the microstrip feeder line (11) is 0.3 mm;
the distance between the first E-type electromagnetic band gap structure (9) and the microstrip feeder line (11) is 0.3;
the distance between the second E-type electromagnetic band gap structure (12) and the microstrip feeder line (11) is 0.45 mm.
9. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 8,
the width of the first rectangular open-loop resonator (2) is 0.4 mm;
the width of the second rectangular open-loop resonator (3) is 0.2 mm;
the branch node width of the outer E-shaped electromagnetic band gap structure (601) is 0.3 mm;
the branch node width of the inner E-shaped electromagnetic band gap structure (602) is 0.3 mm;
the branch node width of the first E-type electromagnetic band gap structure (9) is 0.3 mm;
the width of the branch of the second E-type electromagnetic band gap structure (12) is 0.3 mm.
10. The nested rectangular and E-shaped structured 8-notch ultra-wideband antenna structure of claim 9,
the left-right distance between the second rectangular open-loop resonator (3) and the first rectangular open-loop resonator (2) is 0.1mm, the up-down distance between the second rectangular open-loop resonator (3) and the first rectangular open-loop resonator (2) is 0.6mm, the distance between the first E-type electromagnetic band gap structure (9) and the lower edge of the dielectric substrate (4) is 2mm, the distance between the complementary E-type electromagnetic band gap structure (6) and the first E-type electromagnetic band gap structure (9) is 5mm, and the distance between the second E-type electromagnetic band gap structure (12) and the lower edge of the dielectric substrate (4) is 3.5 mm.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202142638U (en) * 2011-04-26 2012-02-08 肖丙刚 Ultra wide band band-rejection antenna based on complementary diffractive-ring resonator
CN203760672U (en) * 2013-11-27 2014-08-06 哈尔滨飞羽科技有限公司 Circular double-trapped-wave ultra wide band (UWB) antenna based on folding step resonator
CN104681925A (en) * 2013-11-27 2015-06-03 哈尔滨黑石科技有限公司 Ultra wide band antenna with cross-shaped groove structure and dual-notch characteristics
CN210956992U (en) * 2019-12-25 2020-07-07 贵州民族大学 8 trapped wave ultra wide band antenna of nested rectangle and E type structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202142638U (en) * 2011-04-26 2012-02-08 肖丙刚 Ultra wide band band-rejection antenna based on complementary diffractive-ring resonator
CN203760672U (en) * 2013-11-27 2014-08-06 哈尔滨飞羽科技有限公司 Circular double-trapped-wave ultra wide band (UWB) antenna based on folding step resonator
CN104681925A (en) * 2013-11-27 2015-06-03 哈尔滨黑石科技有限公司 Ultra wide band antenna with cross-shaped groove structure and dual-notch characteristics
CN210956992U (en) * 2019-12-25 2020-07-07 贵州民族大学 8 trapped wave ultra wide band antenna of nested rectangle and E type structure

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
D.-O. KI等: ""DESIGN OF THE ULTRAWIDEBAND ANTENNA WITH A QUADRUPLE-BAND REJECTION CHARACTERIS-TICS USING A COMBINATION OF THE COMPLEMEN-TARY SPLIT RING RESONATORS"" *
谢长明等: ""基于S-SCRLHs谐振器的四陷波特性超宽带天线设计"" *

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