CN110872514B - Near infrared light emitting device - Google Patents
Near infrared light emitting device Download PDFInfo
- Publication number
- CN110872514B CN110872514B CN201811012482.7A CN201811012482A CN110872514B CN 110872514 B CN110872514 B CN 110872514B CN 201811012482 A CN201811012482 A CN 201811012482A CN 110872514 B CN110872514 B CN 110872514B
- Authority
- CN
- China
- Prior art keywords
- infrared light
- ion
- titanium oxide
- emitting device
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 150000002500 ions Chemical class 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000002223 garnet Substances 0.000 claims abstract description 13
- 230000005284 excitation Effects 0.000 claims abstract description 10
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims description 65
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 41
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 41
- 239000000843 powder Substances 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 13
- 238000002156 mixing Methods 0.000 claims description 13
- -1 lutetium aluminum Chemical compound 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims 1
- 239000002002 slurry Substances 0.000 description 14
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 13
- 238000012544 monitoring process Methods 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
Abstract
Hair brushProvided is a near-infrared light-emitting device including: a heat conductive substrate; a near-infrared light-emitting layer disposed on the heat-conducting substrate for receiving the excitation light and emitting the excited light, wherein the near-infrared light-emitting layer contains Ce3+Ion and Yb3+Fluorescent materials of ion-codoped garnet structure, Ce3+The doping concentration of the ions is 0.1 to 1 mol%, Yb3+The doping concentration of the ions is 2-20 mol%; and the diffuse reflection layer is clamped between the heat conduction substrate and the near-infrared light emitting layer and is used for reflecting the laser emitted by the near-infrared light emitting layer. The near-infrared light-emitting device of the invention emits near-infrared light with higher brightness and better uniformity.
Description
Technical Field
The invention relates to the technical field of optics, in particular to a near-infrared light-emitting device.
Background
With the increasing development of society, people have higher and higher requirements on monitoring systems, but a prominent problem still exists at present, namely the problem of video monitoring at night. To solve this problem, many proposals have been made in the security industry, such as LED (Light emitting Diode) infrared and laser infrared monitoring systems of active monitoring systems, thermal imagers and low-Light night vision systems of passive infrared monitoring systems, and so on.
Currently, the main application of the active infrared monitoring system is wide, which utilizes a target to reflect an infrared source and utilizes a luminous source to actively irradiate infrared light to implement monitoring. The infrared source is of critical importance in the monitoring system because the brightness of the infrared light determines the clarity of the monitored object, while the etendue of the infrared light determines the range to be monitored. The main problems of LED infrared are that the optical expansion is large, remote infrared monitoring is difficult to realize, and the LED infrared light source is difficult to realize miniaturization for improving the brightness; the main problems of laser infrared are that the laser coherence is strong and the emergent light speckle phenomenon is serious.
Disclosure of Invention
In view of the above, it is desirable to provide a near-infrared light emitting device having high luminance and good light emission uniformity.
A near-infrared light-emitting device comprising: a heat conductive substrate; a near-infrared light-emitting layer disposed on the heat-conducting substrate for receiving the excitation light and emitting the excited light, wherein the near-infrared light-emitting layer contains Ce3+Ion and Yb3+Fluorescent materials of ion-codoped garnet structure, Ce3+The doping concentration of the ions is 0.1 to 1 mol%, Yb3+The doping concentration of the ions is 2-20 mol%; and the diffuse reflection layer is clamped between the heat conduction substrate and the near-infrared light emitting layer and is used for reflecting the laser emitted by the near-infrared light emitting layer.
The near infrared light emitting device provided by the invention is prepared by doping Ce in a garnet structure3+The power density of ion absorption light is 10W/mm2The blue excitation light is converted into lambert-distributed yellow light, Ce3+The ion-emitted yellow light is transferred to Yb by energy3+Ion, Yb3+The ions emit near-infrared stimulated light with high brightness. And because the near-infrared receiving laser is in Lambert distribution, the uniformity of the light emitted by the near-infrared light-emitting device is better.
Drawings
Fig. 1 is a schematic structural diagram of a near-infrared light-emitting device according to a first embodiment of the present invention.
Description of the main elements
| Near infrared |
100 |
| Heat-conducting |
10 |
| |
30 |
| Infrared |
50 |
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention and the scope of the present invention is therefore not limited to the specific embodiments disclosed below.
It is noted that the term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a near-infrared light emitting device 100 according to an embodiment of the present invention. The near-infrared light emitting device 100 includes a heat conductive substrate 10, a diffuse reflection layer 30, and a near-infrared light emitting layer 50. The heat conductive substrate 10 serves to conduct heat. The infrared light emitting layer 50 is disposed on the heat conducting substrate 10, and is configured to receive excitation light and emit excited light. The diffuse reflection layer 30 is sandwiched between the heat conducting substrate 10 and the infrared light emitting layer 50, and is configured to reflect the near-infrared receiving laser emitted by the near-infrared light emitting layer 50.
The heat conducting substrate 10 is made of alumina ceramic, silicon carbide ceramic, boron nitride ceramic or monocrystalline silicon wafers with the heat conductivity of more than 80W/mK.
Specifically, the infrared light emitting layer 50 is used for receiving blue excitation light with high power density and emitting near-infrared receiving laser light with a wavelength range of 800-1200 nm. Wherein the optical power density of the blue excitation light is 10W/mm2As described above. The infrared light emitting layer 50 includes cerium (Ce) ions having trivalent valence3+) And trivalent ytterbium ion (Yb)3+) Codoped garnet-structured fluorescent material. Wherein, Ce3+The ions are used for absorbing blue light with high power density and emitting yellow light; ce3+The ion-emitted yellow light is transferred to Yb by energy3+Ion, Yb3+The ions emit near infrared stimulated light with a wavelength of approximately 1081 nm. The laser emitted by the infrared light emitting layer 50 is lambertian in distribution, and the uniformity is good.
Preferably, the garnet structure is selected from one or both of yttrium aluminum garnet, YAG, and lutetium aluminum garnet, LuAG. Ce3+Ion and Yb3+Ionic co-doping of yttrium aluminum garnet (YAG: Ce)3+/Yb3+) Fluorescent material of, and Ce3+Ion and Yb3+Ionic co-doping lutetium aluminum garnet (LuAG: Ce)3+/Yb3+) In the fluorescent material of (1), Ce3+The doping concentration of the ions is 0.1 to 1 mol%, Yb3+The doping concentration of the ions is 2-20 mol%.
YAG：Ce3+/Yb3+Fluorescent material and LuAG: ce3+/Yb3+In the fluorescent material, since Ce is3+The ion transition absorption cross section is large, and the excited state life is in nanosecond order, so that the YAG: ce3+/Yb3+And LuAG: ce3+/Yb3+Ce of (1)3+The ion can absorb light with the power density of 10W/mm2Blue above excites light, and Ce3+The energy absorbed by the ions is transferred to Yb3+Ion, promoting Yb3+The ions emit near-infrared stimulated light, so that high-brightness blue exciting light is converted into lambert-distributed infrared stimulated light, and the optical power density of the infrared stimulated light is greatly reduced. Meanwhile, the problem of light saturation can be effectively avoided, and high-brightness near-infrared stimulated light emission is guaranteed.
Preferably, the infrared light emitting layer 50 is YAG: ce3+/Yb3+Phosphor and/or LuAG: ce3+/Yb3+Fluorescent glass formed by mixing and sintering fluorescent powder and glass powder, or YAG: ce3+/Yb3+Phosphor or LuAG: ce3+/Yb3+The phosphor powder and the ceramic powder are sintered to form single-phase ceramic, or YAG: ce3+/Yb3+Fluorescent powder and LuAG: ce3+/Yb3+The complex phase ceramic is formed by mixing and sintering fluorescent powder and a second phase adhesive, or is YAG: ce3+/Yb3+Or LuAG: ce3+/Yb3+The single crystal of (1). Wherein, the second phase adhesive can be alumina, yttrium oxide, aluminum oxynitride and magnesium aluminate spinel.
Ce3+Ion-doped LuAG (LuAG: Ce)3+) Short-wave emission is easier to realize, the shorter the wavelength, the higher the energy, Ce3+The energy absorbed by the ions is more easily transferred to Yb3+Ions, hence LuAG: ce3+Is more suitable for codoping Yb3+And emitting infrared stimulated laser.
More preferably, the infrared light emitting layer 50 includes Ce3+Ion and Yb3+Ionic co-doping lutetium aluminum gallium garnet LuAGG (LuAGG: Ce)3+/Yb3+) The fluorescent material of (1). Wherein the doping concentration of gallium (Ga) is not more than 30 mol%, Ce3+The doping concentration of the ions is less than 0.5 mol%, and Ce3+Ion-doped LuAGG (LuAG: Ce)3+) The wavelength of the emitted light of (2) is 500nm or less. Substitution of LuAG by Ga: ce3+/Yb3+(i.e. Lu)3Al5O12：Ce3+/Yb3+) The position of the Al is used for adjusting the lattice environment of the Ce ligand, so that the light-emitting wavelength of the Ce is shortened. Wherein, the higher the Ga doping amount, the shorter the Ce light-emitting wavelength, but the increase of the Ga doping concentration can reduce Lu3Al5O12Conduction band bottom of matrix to Ce3+The relative position of 5d1 energy level, further influencing energy transfer, is easy to cause in Lu3Al5O12：Ce3+/Yb3+The phenomenon of luminescence saturation occurs under the excitation of blue laser with high power density. Through the research of the inventor, the doping concentration is not more than 30mol percent at present.
The diffuse reflection layer 30 is used for reflecting the emergent light of the infrared light-emitting layer 50. After the blue excitation light passes through the infrared light-emitting layer 50, part of the blue light is not Ce absorbed3+Ion absorption and therefore, preferably, the diffuse reflective layer 30 has a reflective effect on blue light. Ce3+Ion-emitted yellow light may be partially transferred to Yb without energy transfer3+Ions, thereforePreferably, the diffuse reflective layer 30 is reflective to yellow light. After the yellow light emitted by the Ce3+ ions is transferred to the Yb3+ ions, the Yb3+ ions emit near-infrared stimulated light, and therefore, the diffuse reflection layer 30 preferably has a reflection effect on the near-infrared stimulated light. Specifically, the diffuse reflection layer 30 has strong reflection to light with a wavelength within a range of 400 to 1200 nm. The diffuse reflection layer 30 comprises spherical titanium oxide particles and rod-shaped titanium oxide particles, wherein the diameter of the spherical titanium oxide particles is 0.1-0.5 um, the rod length of the rod-shaped titanium oxide particles is 2-10 um, and the diameter of the rod-shaped titanium oxide particles is 0.1-1 um. Wherein the spherical titanium oxide particles are used for reflecting light (with a wavelength of 400-800 nm) in a visible region. By adding the rod-shaped titanium oxide particles, the diffuse reflection layer 30 can diffuse reflect light in the visible region and the near infrared region (wavelength range of 800-1200 nm) at the same time.
Due to the high scattering-refraction efficiency of the high-refractive-index titanium oxide particles to light, the high-concentration doped titanium oxide particles can have a light shielding effect, thereby reducing the reflectivity. By doping a small amount of submicron-nanometer level spherical alumina particles with low refractive index in the spherical titanium oxide and the rod-shaped titanium oxide and combining the selection of the particle size of the glass powder and the blending of the content, the light shielding effect can be effectively reduced, and the reflectivity is further improved.
Specifically, the diffuse reflection layer 30 is an inorganic diffuse reflection layer formed by mixing and sintering spherical titanium oxide particles, rod-shaped titanium oxide particles, spherical alumina particles, and glass frit. Wherein, the particle diameter of the spherical alumina particles is 0.01-0.5 um, and the refractive index is less than 1.8. The content of the spherical titanium oxide particles is 20-35%, the content of the rod-shaped titanium oxide particles is 20-30%, the content of the glass powder is 20-30%, and the content of the spherical aluminum oxide particles is 9-30%. Preferably, the content of the spherical alumina particles is 10 to 20%. Wherein the particle size of the glass powder is less than 3 um. Preferably, the particle size of the glass frit is less than 1 um. By regulating and controlling the relative contents of the titanium oxide, the glass powder and the alumina with low refractive index, the uniform mixing among the powder is ensured, the agglomeration of the titanium oxide can be prevented, and the light shielding effect is further reduced.
When the diffuse reflection layer 30 is prepared, firstly, the spherical titanium oxide particles and the spherical alumina particles are added into the organic carrier according to the proportion and are uniformly mixed to form a slurry A, secondly, the rod-shaped titanium oxide particles and the spherical alumina particles are added into the organic carrier according to the proportion and are uniformly mixed to form a slurry B, and finally, the slurry A and the slurry B are uniformly mixed to form a diffuse reflection slurry layer. The diffuse reflection slurry layer prepared by the method can prevent titanium oxide particles from agglomerating, so that powder is uniformly mixed.
The diffuse reflection layer 30 may also be an organic diffuse reflection layer formed by mixing, heating and curing spherical titanium oxide particles, rod-shaped titanium oxide particles, spherical alumina particles and organic silica gel.
Example one
An aluminum nitride thermal conductive substrate is provided. And coating diffuse reflection slurry containing spherical titanium oxide particles, rod-shaped titanium oxide particles, spherical aluminum oxide particles and glass powder on the aluminum nitride heat-conducting substrate. Wherein the content of the spherical titanium oxide particles is 20-35%, the content of the rod-shaped titanium oxide particles is 20-30%, the content of the glass powder is 20-30%, the content of the spherical aluminum oxide particles is 9-30%, the particle size of the spherical titanium oxide particles is 0.1-0.5 um, the rod length of the rod-shaped titanium oxide particles is 2-10 um, the diameter of the rod-shaped titanium oxide particles is 0.1-1 um, the particle size of the spherical aluminum oxide particles is 0.01-0.5 um, and the particle size of the glass powder is less than 3 um. And pre-drying the diffuse reflection slurry layer at 60-150 ℃. Mixing YAG: ce3+/Yb3+Fluorescent powder, glass powder and organic carrier are proportionally prepared to form fluorescent slurry, and the fluorescent slurry is coated on the pre-dried diffuse reflection slurry layer. Wherein YAG: ce3+/Yb3+In the phosphor, Ce3+The doping concentration of the ions is 0.1 to 1 mol%, Yb3+The doping concentration of the ions is 2-20 mol%. And pre-drying the fluorescent slurry layer at 60-150 ℃. And finally, placing the pre-dried aluminum nitride heat-conducting substrate coated with the diffuse reflection slurry layer and the fluorescent slurry layer in a high-temperature furnace, and sintering at 600-1000 ℃ to form the infrared light-emitting device.
Example two
The structure and the manufacturing method of the infrared light emitting device provided by the second embodiment of the present invention are substantially the same as those of the infrared light emitting device provided by the first embodiment, and the differences are only that: the composition of the near-infrared light emitting layer of the infrared light emitting device provided in example two is different from the composition of the near-infrared light emitting layer of the infrared light emitting device provided in example one.
Specifically, the near-infrared light emitting layer provided in example two includes LuAG: ce3+/Yb3+A fluorescent material. YAG: ce3+/Yb3+In the fluorescent material, Y3+Has an ionic radius of 101.9pm, and LuAG: ce3+/Yb3+In the fluorescent material, Lu3+Has an ionic radius of 97.7pm, Yb3+Has an ionic radius of 98.5pm, i.e. Lu3+Ionic radius of (D) and Yb3+Has a similar ion radius phase of Yb3+Atomic number and Lu of3+By 1, and therefore, compared to YAG: ce3+/Yb3+Y in fluorescent materials3+And Yb3+，LuAG：Ce3+/Yb3+Yb in fluorescent Material3+And Lu3+Therefore, compared to the near-infrared light emitting layer of the first embodiment, the light emitting layer includes LuAG: ce3+/Yb3+The near infrared layer of the fluorescent material has an optical power density of 10W/mm2The thermal stability under the excitation of the blue laser is better, and the reliability of near-infrared fluorescence emission is improved.
EXAMPLE III
The structure and the manufacturing method of the infrared light emitting device provided by the third embodiment of the present invention are substantially the same as those of the infrared light emitting device provided by the first embodiment, and the differences are only that: the composition of the near-infrared light emitting layer of the infrared light emitting device provided in example three is different from that of the near-infrared light emitting layer of the infrared light emitting device provided in example one.
Specifically, the near-infrared light-emitting layer provided in example three includes LuAGG: ce3+/Yb3+Fluorescent material, wherein the doping concentration of gallium (Ga) is not more than 30 mol%, Ce3+The doping concentration of the ions is less than 0.5 mol%. Comprises LuAGG: ce3+/Yb3+Near infrared luminescence of fluorescent materialsThe wavelength of the emergent light of the layer is below 500nm, and short-wave emission is realized.
Preparing LuAGG: ce3+/Yb3+When the fluorescent material is used, firstly, the oxide raw material Lu is mixed2O3、CeO2、Al2O3And Ga2O3According to the chemical formula [ (Lu)1-xCexYby)3(Al1-zGaz)5O12,0.001≤x≤0.005,0.02≤y≤0.2，z≤0.3]Proportioning and weighing, grinding and uniformly mixing all the raw materials, tabletting and forming, and finally sintering at 1500-1800 ℃ for 2-10 hours to form LuAGG: ce3+/Yb3+A fluorescent material.
Example four
An aluminum nitride thermal conductive substrate is provided. Providing YAG: ce3+/Yb3+Fluorescent ceramics, or providing LuAG: ce3+/Yb3+A fluorescent ceramic. Wherein, Ce3+The doping concentration of the ions is 0.1 to 1 mol%, Yb3+The doping concentration of the ions is 2-20 mol%. And mixing spherical titanium oxide particles, rod-shaped titanium oxide particles, spherical alumina particles and silica gel in proportion to form a mixture, and coating the mixture on the aluminum nitride heat-conducting substrate to form an organic diffuse reflection layer. Wherein the particle size of the spherical titanium oxide particles is 0.1-0.5 um, the rod length of the rod-shaped titanium oxide particles is 2-10 um, the diameter of the rod-shaped titanium oxide particles is 0.1-1 um, and the particle size of the spherical aluminum oxide particles is 0.01-0.5 um. Mixing YAG: ce3+/Yb3+Fluorescent ceramics or LuAG: ce3+/Yb3+And polishing and thinning the fluorescent ceramic, placing the polished fluorescent ceramic on the organic diffuse reflection layer, and heating and curing to form the near-infrared light-emitting device.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A near-infrared light-emitting device, comprising:
a heat conductive substrate;
a near-infrared light-emitting layer disposed on the heat-conducting substrate for receiving the excitation light and emitting the excited light, wherein the near-infrared light-emitting layer contains Ce3+Ion and Yb3+Phosphor material of ion-codoped lutetium aluminum garnet structure, Ce3+The doping concentration of the ions is 0.1 to 1 mol%, Yb3+The doping concentration of the ions is 2-20 mol%; the diffuse reflection layer is clamped between the heat conduction substrate and the near-infrared light emitting layer and is used for reflecting the laser emitted by the near-infrared light emitting layer; the diffuse reflection layer comprises spherical titanium oxide particles and rod-shaped titanium oxide particles, wherein the diameter of the spherical titanium oxide particles is 0.1-0.5 um, the rod length of the rod-shaped titanium oxide particles is 2-10 um, and the diameter of the rod-shaped titanium oxide particles is 0.1-1 um.
2. The near-infrared light emitting device according to claim 1, wherein the near-infrared light emitting layer is a fluorescent glass, a single-phase ceramic, a complex phase ceramic, or a single crystal.
3. The near-infrared light-emitting device according to claim 2, wherein the infrared light-emitting layer is Ce3+Ion and Yb3+Fluorescent glass formed by mixing and sintering ion-codoped lutetium aluminum garnet fluorescent powder and glass powder, or Ce3+Ion and Yb3+Ion co-doped yttrium aluminum garnet fluorescent powder and Ce3+Ion and Yb3+The fluorescent glass is formed by mixing and sintering the ion co-doped lutetium aluminum garnet fluorescent powder and glass powder.
4. As claimed in claim2 the near-infrared light emitting device is characterized in that the infrared light emitting layer is Ce3+Ion and Yb3+Ion co-doped yttrium aluminum garnet fluorescent powder and Ce3+Ion and Yb3+The complex phase ceramic is formed by mixing and sintering the ion co-doped lutetium aluminum garnet fluorescent powder and a second phase adhesive.
5. The near-infrared light emitting device of claim 4, wherein the second phase binder is aluminum oxide, yttrium oxide, aluminum oxynitride, or magnesium aluminate spinel.
6. The near-infrared light-emitting device of claim 1, wherein the garnet structure is a lutetium aluminum gallium garnet, wherein gallium is doped at a concentration of not more than 30 mol%, Ce3+The doping concentration of the ions is less than 0.5 mol%.
7. The near-infrared light-emitting device according to claim 1, wherein the diffuse reflection layer further comprises spherical alumina particles and glass powder, wherein the spherical alumina particles have a particle size of 0.01 to 0.5 μm, the spherical alumina particles have a refractive index of less than 1.8, the glass powder has a particle size of less than 3 μm, the spherical titanium oxide particles are contained in an amount of 20 to 35%, the rod-shaped titanium oxide particles are contained in an amount of 20 to 30%, the glass powder is contained in an amount of 20 to 30%, and the spherical alumina particles are contained in an amount of 9 to 30%.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811012482.7A CN110872514B (en) | 2018-08-31 | 2018-08-31 | Near infrared light emitting device |
| PCT/CN2019/081651 WO2020042615A1 (en) | 2018-08-31 | 2019-04-08 | Near-infrared light emitting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811012482.7A CN110872514B (en) | 2018-08-31 | 2018-08-31 | Near infrared light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110872514A CN110872514A (en) | 2020-03-10 |
| CN110872514B true CN110872514B (en) | 2022-06-07 |
Family
ID=69642633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811012482.7A Active CN110872514B (en) | 2018-08-31 | 2018-08-31 | Near infrared light emitting device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110872514B (en) |
| WO (1) | WO2020042615A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112210372B (en) * | 2020-09-22 | 2021-07-16 | 厦门大学 | Near-infrared fluorescent material, fluorescent glass, laser near-infrared device and preparation method thereof |
| CN118213453B (en) * | 2024-05-22 | 2024-08-13 | 华引芯（武汉）科技有限公司 | Fluorescent film, preparation method thereof and light-emitting element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1397624A (en) * | 2001-07-19 | 2003-02-19 | 南帝化学工业股份有限公司 | Yttrium aluminium garnet (YAG) type fluorescent powder and its preparing process and application |
| CN101760196A (en) * | 2009-12-29 | 2010-06-30 | 四川大学 | Method for combining yellow fluorescent powder used for white light LED |
| CN104953014A (en) * | 2014-03-28 | 2015-09-30 | 深圳市绎立锐光科技开发有限公司 | Multilayer structure glass fluorescent powder sheet, manufacturing method therefor, and light-emitting device |
| CN105322433A (en) * | 2014-05-28 | 2016-02-10 | 深圳市绎立锐光科技开发有限公司 | Wavelength conversion device and related light emitting device thereof |
-
2018
- 2018-08-31 CN CN201811012482.7A patent/CN110872514B/en active Active
-
2019
- 2019-04-08 WO PCT/CN2019/081651 patent/WO2020042615A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1397624A (en) * | 2001-07-19 | 2003-02-19 | 南帝化学工业股份有限公司 | Yttrium aluminium garnet (YAG) type fluorescent powder and its preparing process and application |
| CN101760196A (en) * | 2009-12-29 | 2010-06-30 | 四川大学 | Method for combining yellow fluorescent powder used for white light LED |
| CN104953014A (en) * | 2014-03-28 | 2015-09-30 | 深圳市绎立锐光科技开发有限公司 | Multilayer structure glass fluorescent powder sheet, manufacturing method therefor, and light-emitting device |
| CN105322433A (en) * | 2014-05-28 | 2016-02-10 | 深圳市绎立锐光科技开发有限公司 | Wavelength conversion device and related light emitting device thereof |
Non-Patent Citations (1)
| Title |
|---|
| Ce3+-Yb3+共掺YAG荧光粉量子剪裁发光的浓度及温度特性;李路等;《发光学报》;20161231;1445-1450 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020042615A1 (en) | 2020-03-05 |
| CN110872514A (en) | 2020-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ling et al. | Red-emitting YAG: Ce, Mn transparent ceramics for warm WLEDs application | |
| He et al. | Red-shifted emission in Y3MgSiAl3O12: Ce3+ garnet phosphor for blue light-pumped white light-emitting diodes | |
| EP3438229B1 (en) | Fluorescent body, light-emitting device, illuminating apparatus, and image display apparatus | |
| CN1769231B (en) | Glass or glass ceremic | |
| CN101605866B (en) | Illumination system comprising composite monolithic ceramic luminescence converter | |
| JP5748028B2 (en) | Composite wavelength conversion powder, composite wavelength conversion powder-containing resin composition, and light emitting device | |
| CN102730980B (en) | High-reliability and high-efficiency fluorescent glass for packaging LED (light emitting diode) and preparation method thereof | |
| Wu et al. | Crystal Structure and Optical Performance of Al 3+ and Ce 3+ Codoped Ca 3 Sc 2 Si 3 O 12 Green Phosphors for White LED s | |
| WO2017211135A1 (en) | Light-emitting ceramic | |
| CN106145922A (en) | A kind of preparation method of LED YAG transparent fluorescent ceramic | |
| CN101314519A (en) | Rare earth doping luminescent glass for white radiation LED and producing thereof | |
| CN110872514B (en) | Near infrared light emitting device | |
| Xu et al. | High refractive index coating of phosphor-in-glass for enhanced light extraction efficiency of white LEDs | |
| CN110240468A (en) | Fluorescence ceramics and preparation method thereof | |
| CN108300473A (en) | A kind of Wavelength converter and preparation method thereof, light-emitting device and projection arrangement | |
| Li et al. | Phosphor‐in‐silica‐glass: filling the gap between low‐and high‐brightness solid‐state lightings | |
| CN109987932B (en) | Complex phase fluorescent ceramic for white light illumination, preparation method and light source device | |
| WO2009083867A1 (en) | Color filter for a light emitting device | |
| Lu et al. | Novel efficient SrMgY3 (SiO4) 3F: Ce3+, Tb3+ phosphor with tunable color and thermal stability through energy transfer | |
| JP2014022412A (en) | Fluorescent material dispersed inorganic glass plate | |
| Zhang et al. | Layered array Al2O3-LuAG: Ce composite ceramic phosphors for high-brightness display | |
| CN112639545A (en) | Wavelength conversion member, and light source device, projector, and vehicle using same | |
| CN101017870A (en) | The fluorescent powder of white semiconductor light source and LaGa silicate base and its making method | |
| TW201122084A (en) | Sm-activated aluminate and borate phosphors | |
| US20130334957A1 (en) | Tin phosphate glass containing embedded luminescent material particles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |