CN110868197A - Ultra-wideband microwave sampling circuit and sampling method based on nonlinear transmission line - Google Patents
Ultra-wideband microwave sampling circuit and sampling method based on nonlinear transmission line Download PDFInfo
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- CN110868197A CN110868197A CN201911151827.1A CN201911151827A CN110868197A CN 110868197 A CN110868197 A CN 110868197A CN 201911151827 A CN201911151827 A CN 201911151827A CN 110868197 A CN110868197 A CN 110868197A
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- 238000005070 sampling Methods 0.000 title claims abstract description 105
- 230000005540 biological transmission Effects 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 13
- 230000010355 oscillation Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
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- 230000006835 compression Effects 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/017—Adjustment of width or dutycycle of pulses
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2463—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
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Abstract
The invention discloses an ultra-wideband microwave sampling circuit and a sampling method based on a nonlinear transmission line, wherein the sampling circuit comprises a self-biased nonlinear transmission line narrow pulse generating circuit, a slot line-microstrip balun, a sampling gate tube circuit and an intermediate frequency circuit which are connected in sequence, a series of narrow pulse local oscillator signals are generated after the local oscillator signals enter the self-biased nonlinear transmission line narrow pulse generating circuit, the narrow pulse local oscillator signals are converted into a pair of sampling pulses with equal amplitude and opposite phase through the slot line-microstrip balun, the radio frequency signals are sampled on the sampling gate tube circuit and output after being shaped by the intermediate frequency circuit, so that the sampling of the radio frequency signals is completed, and the sampling circuit and the sampling method can realize ultra-wideband frequency coverage from the radio frequency to the millimeter wave frequency; the self-bias circuit has the advantages of no need of external bias voltage, simple design, easy realization, easy adjustment, strong expansibility and low cost.
Description
Technical Field
The invention relates to a microwave sampling technology, in particular to an ultra-wideband microwave sampling circuit and a sampling method based on a nonlinear transmission line.
Background
Microwave signal sampling techniques have found wide application in measurement and test instruments such as sampling oscilloscopes, vector network analyzers, spectrum analyzers, ultra-wideband receivers, and the like. The sampling technology adopts the principle of sampling and holding, and mainly has the functions of completing frequency conversion, converting a microwave signal into an intermediate frequency signal with a lower frequency and simultaneously keeping amplitude information and phase information of the microwave signal from being lost. Sampling is a core factor influencing the main indexes of the upper limit working frequency, the whole machine dynamic range and the like of a testing instrument.
In the sampling technology, a narrow pulse signal is required to control a diode sampling bridge to perform sampling so as to realize down-conversion. In the current sampling technology, a step recovery diode is mainly used for generating narrow pulses and controlling a diode sampling bridge to realize down-conversion. The basic principle is that a local oscillation signal enters an SRD pulse generating circuit through a low-pass filter to generate a series of step pulse signals, the step pulse signals are added to a sampling gate tube circuit to sample radio frequency signals, and the radio frequency signals are shaped by an intermediate frequency circuit, amplified and output, so that sampling frequency conversion of the radio frequency signals is completed, as shown in figure 1. The prior art has the defects that the conversion time and the carrier service life of a step recovery diode are limited, the width of a narrow pulse generated by the step recovery diode is limited, only a narrow pulse with a rising edge of dozens of picoseconds can be generated, the working frequency of a sampling circuit can only reach about 20GHz, and the requirement of wider frequency band testing cannot be met. The bandwidth is narrow, the limitation is very large, and the use requirement of large bandwidth and high frequency band is difficult to realize.
With the rapid development of electronic technology, various measurement and test devices are continuously developed in the directions of high frequency and broadband, which puts higher requirements on the working bandwidth of the sampling technology, and the previous sampling technology can not meet the requirements of instruments.
Disclosure of Invention
In order to solve the technical problems, the invention provides an ultra-wideband microwave sampling circuit and a sampling method based on a nonlinear transmission line, so as to achieve the purposes of expanding the bandwidth of a sampling technology, improving the working frequency and meeting the frequency conversion requirement of a large-bandwidth high-frequency testing instrument.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an ultra-wideband microwave sampling circuit based on a nonlinear transmission line comprises a self-biased nonlinear transmission line narrow pulse generating circuit, a slot line-microstrip balun, a sampling gate tube circuit and an intermediate frequency circuit which are connected in sequence.
In the above scheme, the self-biased nonlinear transmission line narrow pulse generating circuit includes a self-biasing circuit and a nonlinear transmission line circuit.
In the above scheme, the self-bias circuit includes an inductor, a resistor, and a capacitor.
In the above scheme, the nonlinear transmission line circuit includes a high-impedance transmission line and a varactor schottky diode periodically loaded thereon, the high-impedance transmission line has a coplanar line structure, and the coplanar line and the varactor schottky diode are fabricated on a semiconductor substrate.
In a further technical scheme, the semiconductor substrate is a GaAs substrate or an InP substrate.
In the scheme, the sampling gate tube circuit is a double-tube balance sampling structure and consists of two Schottky diodes which are integrated together.
In the scheme, the ultra-wideband microwave sampling circuit adopts the coplanar waveguide as a radio frequency signal transmission line, and the sampling gate tube circuit is arranged between the central strip line and the grounding strip line of the coplanar waveguide.
A sampling method of ultra-wideband microwave based on nonlinear transmission line is to generate a series of narrow pulse local oscillation signals after the local oscillation signals enter a narrow pulse generating circuit of self-biased nonlinear transmission line, convert the signals into a pair of equal-amplitude and opposite-phase sampling pulses through a slot line-microstrip balun, sample the radio frequency signals on a sampling gate tube circuit, and output the signals after being shaped by an intermediate frequency circuit, thereby completing the sampling of the radio frequency signals.
In a further technical scheme, a radio frequency signal and a narrow pulse local oscillation signal are respectively added to a sampling gate tube circuit in different phases, when the narrow pulse local oscillation signal is transmitted to the vicinity of a central strip line of the sampling gate tube circuit, two Schottky diodes of the sampling gate tube circuit are excited and opened, and when the narrow pulse local oscillation signal returns to the center from an edge grounding resistor, pulses are reflected to close the two Schottky diodes of the sampling gate tube circuit; when the sampling gate tube circuit is conducted and presents low impedance, the high-frequency radio frequency input signal is taken out.
According to the technical scheme, the ultra-wideband microwave sampling circuit and the sampling method based on the nonlinear transmission line provided by the invention adopt the self-biased nonlinear transmission line to generate the ultra-narrow pulse, the input end of the narrow pulse generating circuit of the nonlinear transmission line adopts the self-biased circuit consisting of the inductor, the resistor and the capacitor, the compression efficiency and the harmonic output power are improved, the working bandwidth is improved, the frequency conversion loss of sampling is reduced, the additional direct current bias is not needed, the circuit structure is simplified, the debugging is easy, and the cost is low; the picosecond-magnitude ultra-narrow pulse generator is realized by utilizing the self-biased nonlinear transmission line, two Schottky diodes of a sampling gate tube circuit are started to obtain two paths of intermediate frequency signals, and the intermediate frequency signals are rectified, so that ultra-wide band sampling based on the nonlinear transmission line is realized. Compared with a sampling technology based on a step recovery diode, the sampling circuit greatly expands the working bandwidth and can work to 100 GHz.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a schematic diagram of a conventional SRD sampling scheme;
FIG. 2 is a flow chart of a method for sampling ultra-wideband microwaves based on nonlinear transmission lines according to an embodiment of the present invention;
fig. 3 is a circuit diagram of an ultra-wideband microwave sampling circuit based on a nonlinear transmission line according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The invention provides an ultra-wideband microwave sampling circuit based on a nonlinear transmission line, which comprises a self-bias nonlinear transmission line narrow pulse generating circuit, a slot line-microstrip balun, a sampling gate tube circuit and an intermediate frequency circuit which are sequentially connected as shown in figures 2 and 3.
The self-biased nonlinear transmission line narrow pulse generating circuit is realized by adopting a monolithic microwave integrated circuit chip (MMIC). The self-bias nonlinear transmission line narrow pulse generating circuit comprises a self-bias circuit and a nonlinear transmission line circuit, wherein the nonlinear transmission line circuit comprises a high-impedance transmission line and a variable-capacitance Schottky diode periodically loaded on the high-impedance transmission line, the high-impedance transmission line adopts a coplanar line structure, the coplanar line and the variable-capacitance Schottky diode are manufactured on a semiconductor substrate with high electron mobility and low loss, and the semiconductor substrate is a GaAs substrate or an InP substrate.
The input end of the self-bias nonlinear transmission line narrow pulse generating circuit is a self-bias circuit consisting of an inductor, a resistor and a capacitor. The self-bias potential improves the signal edge compression efficiency and harmonic output power of the nonlinear transmission line, no additional direct current power supply bias is needed, the circuit structure is simplified, the debugging is easy, and the cost is low. The narrow pulse signal generated by the self-biased nonlinear transmission line narrow pulse generating circuit is converted into a pair of equal-amplitude and opposite-phase sampling pulses through the slot line-microstrip balun, and the sampling pulses are added to the sampling gate tube circuit.
The sampling gate tube circuit is a double-tube balance sampling structure and consists of two Schottky diodes which are integrated together. The radio frequency signal and the narrow pulse local oscillation signal are respectively added to a Schottky diode of the sampling gate tube circuit in different phases.
Because the coplanar waveguide has the characteristic of low-loss transmission in an extremely wide frequency range, the ultra-wideband microwave sampling circuit adopts the coplanar waveguide as a radio-frequency signal transmission line, and two Schottky diodes of a sampling gate tube circuit are arranged between a central strip line and a grounding strip line of the coplanar waveguide. The Schottky diode is controlled by the sampling pulse to play a role of a high-speed switch, ultra-wide band sampling is realized, and two paths of generated intermediate frequency signals are output through the intermediate frequency circuit. Compared with the sampling technology based on the SRD, the sampling circuit greatly expands the working bandwidth, and can work to 100 GHz.
In terms of phase distribution, narrow pulse local oscillation signals are distributed on the two Schottky diodes in the same phase, and radio frequency signals are distributed on the two Schottky diodes in the opposite phase, so that leakage is reduced due to the different phase distribution, and good isolation between local oscillation and radio frequency ports is provided. Because the sampling pulse is a symmetrical complementary pulse, the noise introduced by a sampling pulse source can be eliminated at the output end of the sampling gate tube circuit, so that the signal-to-noise ratio of the Schottky diode is improved.
The invention discloses an ultra-wideband microwave sampling method based on a nonlinear transmission line, which comprises the following steps:
after the local oscillation signal enters the self-biased nonlinear transmission line narrow pulse generating circuit, a series of narrow pulse local oscillation signals are generated and converted into a pair of equal-amplitude and opposite-phase sampling pulses through a slot line-microstrip balun, the radio frequency signal is sampled on a sampling gate tube circuit and output after being shaped by an intermediate frequency circuit, and therefore sampling of the radio frequency signal is completed.
The radio frequency signal and the narrow pulse local oscillation signal are respectively added on the two Schottky diodes in different phases, when the narrow pulse local oscillation signal is transmitted to the vicinity of the central strip line of the two Schottky diodes, the two Schottky diodes of the sampling gate tube circuit are excited and opened, and when the narrow pulse local oscillation signal returns to the center from the edge grounding resistor, the reflected pulse enables the two Schottky diodes of the sampling gate tube circuit to be closed; when the sampling gate tube circuit is conducted and presents low impedance, the high-frequency radio frequency input signal is taken out.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. An ultra-wideband microwave sampling circuit based on a nonlinear transmission line is characterized by comprising a self-biased nonlinear transmission line narrow pulse generating circuit, a slot line-microstrip balun, a sampling gate tube circuit and an intermediate frequency circuit which are sequentially connected.
2. The ultra-wideband microwave sampling circuit based on nonlinear transmission line according to claim 1, characterized in that the self-biased nonlinear transmission line narrow pulse generating circuit comprises a self-biasing circuit and a nonlinear transmission line circuit.
3. The ultra-wideband microwave sampling circuit based on nonlinear transmission line of claim 2, wherein the self-bias circuit comprises an inductor, a resistor and a capacitor.
4. The ultra-wideband microwave sampling circuit based on the nonlinear transmission line according to claim 2, wherein the nonlinear transmission line circuit comprises a high-impedance transmission line and a varactor schottky diode periodically loaded thereon, the high-impedance transmission line adopts a coplanar line structure, and the coplanar line and the varactor schottky diode are fabricated on a semiconductor substrate.
5. The ultra-wideband microwave sampling circuit based on nonlinear transmission line of claim 4, characterized in that the semiconductor substrate is GaAs substrate or InP substrate.
6. The ultra-wideband microwave sampling circuit based on the nonlinear transmission line is characterized in that the sampling gate tube circuit is a double-tube balanced sampling structure and consists of two Schottky diodes which are integrated together.
7. The ultra-wideband microwave sampling circuit based on nonlinear transmission line according to claim 1, characterized in that the ultra-wideband microwave sampling circuit adopts coplanar waveguide as radio frequency signal transmission line, and the sampling gate tube circuit is installed between the coplanar waveguide central strip line and the grounding strip line.
8. A sampling method of ultra-wideband microwave based on nonlinear transmission line is characterized in that after a local oscillation signal enters a self-biased nonlinear transmission line narrow pulse generating circuit, a series of narrow pulse local oscillation signals are generated and converted into a pair of equal-amplitude and opposite-phase sampling pulses through a slot line-microstrip balun, a radio frequency signal is sampled on a sampling gate tube circuit and output after being shaped by an intermediate frequency circuit, and thus sampling of the radio frequency signal is completed.
9. The sampling method of claim 8, wherein the rf signal and the narrow pulse local oscillator signal are applied to the sampling gate transistor circuit at different phases, respectively, and the narrow pulse local oscillator signal is transmitted to the vicinity of the central strip line of the sampling gate transistor circuit to excite and turn on the two schottky diodes of the sampling gate transistor circuit, and when the narrow pulse local oscillator signal returns to the center from the edge ground resistor, the reflected pulse turns off the two schottky diodes of the sampling gate transistor circuit; when the sampling gate tube circuit is conducted and presents low impedance, the high-frequency radio frequency input signal is taken out.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113824433A (en) * | 2021-08-26 | 2021-12-21 | 电子科技大学 | Pulse modulator based on Schottky diode cascade connection |
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CN113824433B (en) * | 2021-08-26 | 2023-08-25 | 电子科技大学 | Pulse modulator based on schottky diode cascade |
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