CN110868158B - Miniaturized radio frequency oscillator with wide linear frequency modulation range - Google Patents
Miniaturized radio frequency oscillator with wide linear frequency modulation range Download PDFInfo
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Abstract
The application discloses a miniaturized radio frequency oscillator with a wide linear frequency modulation range, and belongs to the technical field of radio frequency chip circuit design. The oscillator comprises a signal amplifying sub-module, a delay adjusting sub-module and a double-frequency-adjusting control voltage generating module. The oscillation frequency of the oscillator is improved by introducing capacitors into the sources of the fourth MOS tube and the fifth MOS tube, and meanwhile, two control voltages are generated by the double-frequency modulation control voltage generating module and the delay of the circuit is controlled, so that the frequency modulation is broadband and linear. Under the same power consumption, the application has 41% higher oscillation frequency than the traditional ring oscillator, 83% higher frequency modulation range, 3.4 times wider frequency modulation range than the traditional resonance type oscillator, and maintains the linear regulation characteristic in the frequency modulation range. The application has the characteristic of miniaturization, and saves the cost for the production of integrated circuits.
Description
Technical Field
The application relates to the technical field of radio frequency oscillation circuit design, in particular to a method for designing a miniaturized radio frequency front-end integrated circuit with a wide linear frequency modulation range, which particularly comprises a voltage-controlled oscillator and a current mode logic frequency divider module.
Background
With the development of radio frequency integrated circuit technology and technology, the fields of high-speed communication, radar detection and the like adopt a radio frequency integrated circuit to replace a traditional PCB discrete component radio frequency circuit, an oscillator is used as a core component in a phase-locked loop, high frequency modulation linearity is required to ensure the stability of the phase-locked loop, and the frequency modulation linearity of a traditional single-control voltage ring oscillator is poor.
The frequency modulation continuous wave radar is widely applied to the field of Doppler radar target detection and is used for measuring the distance of a target, the distance measurement precision of the frequency modulation continuous wave is in direct proportion to the frequency modulation bandwidth, as shown in fig. 1, the frequency modulation radar is a circuit schematic diagram of a traditional resonance type oscillator, the frequency modulation bandwidth of the traditional resonance type oscillator is narrow, and meanwhile, the nonlinearity of frequency modulation can degrade the performance of the frequency modulation continuous wave radar, so that the frequency modulation continuous wave is difficult to meet the centimeter-level distance measurement precision.
The arrival of the Internet of things era means that a large number of sensors are applied to our lives, the chip cost often determines the competitiveness of products, large-size devices are required to be avoided when the radio frequency oscillator is designed, and the traditional LC on-chip oscillator is difficult to miniaturize due to large-size inductors, so that the chip production cost is high. As shown in fig. 2a-2b, the circuit schematic diagram of the conventional ring oscillator is provided, and the ring oscillator is designed without using large-size devices such as inductors, so that the production and manufacturing cost of the circuit is effectively reduced.
Disclosure of Invention
The application provides a radio frequency oscillator integrated circuit with good frequency modulation linearity, wide frequency modulation range and small size, which aims to solve the technical problems of poor frequency modulation linearity, narrow frequency modulation range and large size of the conventional radio frequency oscillator.
The application provides a miniaturized radio frequency oscillator with wide linear frequency modulation range, which comprises two oscillator unit modules and a double-frequency-modulation control voltage generation module, wherein the oscillator unit modules comprise a signal amplifying sub-module and a delay adjusting sub-module;
the signal amplification submodule is used for providing enough voltage gain and basic circuit delay to realize a circuit starting process;
the delay adjusting submodule is used for providing negative resistance and negative capacitance so as to improve the working frequency of the oscillator and simultaneously provide a control voltage interface so as to realize broadband linear adjustment of control voltage to frequency;
the dual-frequency modulation control voltage generation module is used for converting the single control voltage into dual control voltages, and the dual control voltages have the frequency modulation effect of the same polarity on the oscillator.
Preferably, the signal amplifying module comprises a first resistor, a second resistor, a first MOS tube, a second MOS tube and a third MOS tube.
Preferably, the delay adjustment submodule includes a third resistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor.
Preferably, the dual frequency modulation control voltage generating module includes a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, and an operational amplifier.
Preferably, the oscillator unit module includes a first oscillator unit module and a second oscillator unit module, the first oscillator unit module and the second oscillator unit module have the same internal structure, a first output port of the first oscillator unit module is connected with a first input port of the second oscillator unit module, a second output port of the first oscillator unit module is connected with a second input port of the second oscillator unit module, a first output port of the second oscillator unit module is connected with a second input port of the first oscillator unit module, and a second output port of the second oscillator unit module is connected with a first input port of the first oscillator unit module;
the first end of the first resistor is connected to the power supply voltage, the other end of the first resistor is used as a second output port of the oscillator unit module, and the first end of the first capacitor is connected with the drain electrode of the first MOS tube, the drain electrode of the fourth MOS tube and the first end of the first capacitor;
the first end of the second resistor is connected to the power supply voltage, and the other end of the second resistor is used as a first output port of the oscillator unit module and is connected with the drain electrode of the second MOS tube, the drain electrode of the fifth MOS tube and the first end of the second capacitor;
the grid electrode of the first MOS tube is used as a first input port of the oscillator unit module, the grid electrode of the second MOS tube is used as a second input port of the oscillator unit module, and the source electrode of the first MOS tube is connected with the drain electrode of the third MOS tube and the source electrode of the second MOS tube;
the grid electrode of the third MOS tube is connected with the first bias, and the source electrode of the third MOS tube is directly grounded;
the other end of the first capacitor is connected with the first end of the fourth resistor and the grid electrode of the fifth MOS tube, and the other end of the second capacitor is connected with the first end of the third resistor and the grid electrode of the fourth MOS tube;
the other end of the third resistor is connected with the other end of the fourth resistor and the second control voltage;
the source electrode of the fifth MOS tube is connected with the first end of the fourth capacitor and the drain electrode of the seventh MOS tube;
the other end of the third capacitor is connected with the other end of the fourth capacitor and the first control voltage;
the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube and the second bias voltage, the source electrode of the sixth MOS tube is directly grounded, and the source electrode of the seventh MOS tube is directly grounded;
the first end of the fifth resistor is connected with an external reference direct-current voltage, the other end of the fifth resistor is connected with the first end of the sixth resistor and the first input end of the operational amplifier, and the other end of the sixth resistor is directly grounded;
the first end of the seventh resistor is connected with the first control voltage, the other end of the seventh resistor is connected with the first end of the eighth resistor and the second input end of the operational amplifier, and the other end of the eighth resistor is connected with the output end of the operational amplifier and the second control voltage.
Preferably, the third capacitor and the fourth capacitor are voltage-controlled variable capacitors.
The application provides a radio frequency front end integrated circuit which comprises any one of the radio frequency oscillators.
The application also provides a wide-linearity frequency modulation method, which comprises the first control voltage and the second control voltage generation method, wherein the two input ends of the operational amplifier are input with high resistance, and when the two input ends keep equal voltage, the fifth resistance, the sixth resistance, the seventh resistance and the eighth resistance are adjusted to adjust the frequency modulation linearity and the frequency modulation range of the radio frequency oscillator.
The beneficial effects of the application are as follows:
the application is provided with the delay adjustment submodule, and the third capacitor and the fourth capacitor are added to the sources of the fourth MOS tube and the fifth MOS tube, and the parasitic capacitance of the output port is eliminated by introducing the negative capacitor, so that the signal transmission delay is reduced, and the working frequency of the oscillator is greatly improved under the condition of not improving the power consumption.
The delay adjustment submodule adopts two control voltages to respectively control the magnitude of the negative capacitor and the magnitude of the negative resistance, controls the magnitude of the negative resistance to obtain a wider frequency modulation range, controls the magnitude of the negative capacitor to obtain a linear frequency modulation effect, combines the two to obtain a wide linear frequency modulation range of the voltage-controlled oscillator, solves the problem of serious nonlinearity under wide frequency modulation, and can be applied to a frequency modulation continuous wave radar to obtain higher distance measurement precision.
According to the radio frequency oscillator, the double frequency modulation control voltage generation module is used for combining the single control voltage with the external reference direct current voltage under the condition that the power consumption is not required to be additionally improved, so that the double frequency modulation control voltage is generated.
Drawings
Fig. 1 is a schematic circuit diagram of a conventional resonance type oscillator;
FIG. 2a is a schematic circuit diagram of a conventional ring oscillator;
FIG. 2b is a schematic diagram of an oscillation unit module of a conventional ring oscillator;
FIG. 3 is a diagram of an integrated circuit module connection of the present application;
FIG. 4a is a schematic diagram of a core delay cell connection of the present application;
FIG. 4b is a schematic diagram of the internal circuitry of the oscillating unit module of the present application;
FIG. 4c is a schematic diagram of a dual tone control voltage generation module according to the present application;
FIG. 5 is a schematic diagram of simulation results of oscillation frequency of three oscillator circuits as a function of control voltage;
fig. 6 is a schematic diagram of simulation results of frequency modulation sensitivity of three oscillator circuits as a function of control voltage.
Description of the drawings:
1. a first signal amplifying sub-module; 2. a first delay adjustment sub-module; 3. a double frequency modulation control voltage generation module; 4. a second signal amplifying sub-module; 5. a second delay adjustment sub-module; 10. a first oscillator unit module; 20. and a second oscillator unit module.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
The application is further described below with reference to the drawings and specific examples, which are not intended to be limiting.
Embodiment 1, as shown in fig. 3, is a connection diagram of a miniaturized and wide-chirp-range rf oscillator module provided by the present application, and the rf oscillator integrated circuit includes a first oscillator unit module 10, a second oscillator unit module 20, and a dual-tone control voltage generation module 3, wherein the first oscillator unit module 10 includes a first signal amplification sub-module 1 and a first delay adjustment sub-module 2, and the second oscillator unit module 20 includes a second signal amplification sub-module 4 and a second delay adjustment sub-module 5. The first oscillator unit module 10 and the second oscillator unit module 20 are connected to each other, and the dual modulation control voltage generation module 3 is connected to both the first oscillator unit module 10 and the second oscillator unit module 20.
The first signal amplification submodule 1 and the second signal amplification submodule 4 have the same internal structure and are used for providing enough voltage gain and basic circuit delay to realize the circuit starting process; the first delay adjustment submodule 2 and the second delay adjustment submodule 5 have the same internal structure and are used for providing negative resistance and negative capacitance so as to improve the working frequency of the oscillator and provide a control voltage interface so as to realize wideband linear adjustment of control voltage to frequency; the dual fm control voltage generation module 3 is configured to convert a single control voltage into dual control voltages, where the dual control voltages have the same polarity of the frequency modulation effect on the oscillator.
As shown in fig. 4a, which is a schematic circuit diagram of the present application, the first oscillator unit module 10 has the same internal structure as the second oscillator unit module 20, the first oscillator unit module 10 includes a first signal amplifying sub-module 1 and a first delay adjusting sub-module 2, and the second oscillator unit module 20 includes a second signal amplifying sub-module 4 and a second delay adjusting sub-module 5; the first output port out+ of the first oscillator unit module 10 is the connection between the OUTIp and the first input port in+ of the second oscillator unit module 20, the second output port OUT-of the first oscillator unit module 10 is the connection between the OUTIn and the second input port IN-of the second oscillator unit module 20, the first output port out+ of the second oscillator unit module 20 is the connection between the OUTQp and the second input port IN-of the first oscillator unit module 10, and the second output port OUT-of the second oscillator unit module 20 is the connection between the OUTQn and the first input port in+ of the first oscillator unit module 10.
As shown in fig. 4b-4c, an integrated circuit schematic diagram is shown, in which Vctrl1 corresponding to fig. 4b and 4c are connected, and Vctrl1 is simultaneously used as an external input signal of the circuit, and Vctrl2 corresponding to fig. 4b and 4c are connected. Vref in fig. 4c is the circuit external input signal. This embodiment includes: the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the first MOS transistor M1, the second MOS transistor M2, the third MOS transistor M3, the fourth MOS transistor M4, the fifth MOS transistor M5, the sixth MOS transistor M6, the seventh MOS transistor M7, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8, the operational amplifier OP, the first orthogonal signal output port OUTIp, the second orthogonal signal output port OUTIn, the third orthogonal signal output port OUTQp, the fourth orthogonal signal output port OUTQn, the first control voltage Vctrl1, the second control voltage Vctrl2, the externally applied reference direct current voltage Vref, the first bias voltage VB1, the second bias voltage VB2 and the power supply voltage Vdd; wherein:
the first end of the first resistor R1 is connected to the power supply voltage Vdd, and the other end of the first resistor R1 is used as an output port OUTIn of the radio frequency oscillator and is connected with the drain electrode of the first MOS tube M1, the drain electrode of the fourth MOS tube M4 and the first end of the first capacitor C1.
The first end of the second resistor R2 is connected to the power supply voltage Vdd, and the other end of the second resistor R2 is used as an output port OUTIp of the radio frequency oscillator, and is connected to the drain electrode of the second MOS transistor M2, the drain electrode of the fifth MOS transistor M5, and the first end of the second capacitor C2.
The grid electrode of the first MOS tube M1 is connected with the output port OUTQn of the radio frequency oscillator, the grid electrode of the second MOS tube M2 is connected with the output port OUTQp of the radio frequency oscillator, and the source electrode of the first MOS tube M1 is connected with the drain electrode of the third MOS tube M3 and the source electrode of the second MOS tube M2.
The grid electrode of the third MOS tube M3 is connected with the first bias VB1, and the source electrode of the third MOS tube M3 is directly grounded.
The other end of the first capacitor C1 is connected with the first end of the fourth resistor R4 and the grid electrode of the fifth MOS tube M5, and the other end of the second capacitor C2 is connected with the first end of the third resistor R3 and the grid electrode of the fourth MOS tube M4.
The other end of the third resistor R3 is connected to the other end of the fourth resistor R4 and the second control voltage Vctrl 2.
The source electrode of the fourth MOS tube M4 is connected with the first end of the third capacitor C3 and the drain electrode of the sixth MOS tube M6, and the source electrode of the fifth MOS tube M5 is connected with the first end of the fourth capacitor C4 and the drain electrode of the seventh MOS tube M7.
The other end of the third capacitor C3 is connected to the other end of the fourth capacitor C4 and the first control voltage Vctrl 1.
The grid electrode of the sixth MOS tube M6 is connected with the grid electrode of the seventh MOS tube M7 and the second bias voltage Vctrl2, the source electrode of the sixth MOS tube M6 is directly grounded, and the source electrode of the seventh MOS tube M7 is directly grounded.
The first end of the fifth resistor R5 is connected with the externally-applied reference direct-current voltage Vref, the other end of the fifth resistor R5 is connected with the first end of the sixth resistor R6 and the first input end P of the operational amplifier OP, and the other end of the sixth resistor R6 is directly grounded.
The first end of the seventh resistor R7 is connected with the first control voltage Vctrl1, the other end of the seventh resistor R7 is connected with the first end of the eighth resistor R8 and the second input end N of the operational amplifier OP, and the other end of the eighth resistor R8 is connected with the output end O of the operational amplifier and the second control voltage Vctrl 2.
The third capacitor C3 and the fourth capacitor C4 are voltage-controlled variable capacitors.
The specific working principle of this embodiment is as follows:
this embodiment is a miniaturized, wide-chirp range rf oscillator operating at a center frequency of 10.5 GHz. The input and output of the two oscillator unit modules A and B are connected to form a positive feedback loop, and the radio frequency output port OUTIp, OUTIn, OUTQp, OUTQn is a four-way quadrature signal with a phase difference of 90 degrees.
In the signal amplifying sub-module, the first MOS tube M1 and the second MOS tube M2 play a role in converting voltage into current, the first resistor R1 and the second resistor R2 serve as loads of a differential amplifier and play a role in converting current into voltage, the module provides enough voltage gain and proper phase shift to meet the closed loop vibration starting condition, and the voltage gain under a small signal is as follows:
Av＝g m [R//RL//(1/jwC L )]wherein g m The transconductance of the first MOS tube M1 or the second MOS tube M2 is R is the resistance value of the first resistor R1 or the second resistor R2, RL is the negative resistance introduced by the delay adjustment submodule, C L The parasitic capacitance of the OUTIp or OUTIn port, w is the oscillation angular frequency.
In the delay adjustment submodule, a cross coupling circuit is formed by a fourth MOS tube M4 and a fifth MOS tube M5, so that a negative resistance is formed, and the size of the negative resistance is as follows:
RL＝-1/gm 2 gm in it 2 Transconductance gm of the fourth MOS transistor M4 or the fifth MOS transistor M5 2 In relation to the bias current flowing through the delay adjustment sub-module, the magnitude of the negative resistance can be controlled by the first control voltage Vctrl 1.
Meanwhile, the third capacitor C3 and the fourth capacitor C4 will introduce negative capacitances at the OUTIp and the OUTIn ports, so as to cancel out a part of parasitic capacitances of the OUTIp and the OUTIn ports, and the generated negative capacitances are:
Cneg＝-(gm 2 ) 2 /(2w 2 c) Wherein w is the oscillation angular frequency, and C is the capacitance of the third capacitor C3 or the fourth capacitor C4. Meanwhile, the third capacitor C3 and the fourth capacitor C4 are voltage-controlled variable capacitors, and the negative capacitance can be adjusted by adjusting the second control voltage Vctrl2 to change the capacitance values of the third capacitor C3 and the fourth capacitor C4.
The oscillator oscillation frequency can be expressed as:
fosc＝1/[4(R//R L )C L ]by introducing negative capacitance technique, C is reduced L Thereby increasing the oscillation frequency, while the first control voltage Vctrl1 and the second control voltage Vctrl2 simultaneously act on the circuit for R L And C L The adjustment is performed so that the oscillation frequency adjustment is achieved. The first control voltage Vctrl1 generates a wide frequency modulation range, and the second control voltage Vctrl1 corrects the frequency modulation linearity.
In the dual fm control voltage generating module 3, the subtracter is designed by using the operational amplifier, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, and the eighth resistor R8 to generate the second control voltage Vctrl2, where the first control voltage Vctrl1 and the second control voltage Vctrl2 have the same polarity characteristic for adjusting the frequency.
As shown in FIG. 5, the simulation result of the circuit oscillation frequency with the control voltage is shown in a schematic diagram, the abscissa is the control voltage (V), the ordinate is the oscillation frequency (GHz), three curves respectively represent the simulation result of the circuit oscillation frequency of three different oscillators with the control voltage, wherein the solid line represents the radio frequency oscillator of the present application, the dash-dot line represents the conventional ring oscillator, and the dashed line represents the conventional resonance type oscillator. The power supply voltage is set to be 1.2V in three different oscillator circuits, the power consumption of the radio frequency oscillator is identical to that of a traditional ring oscillator circuit, and the radio frequency oscillator circuit is added with a third capacitor C3, a fourth capacitor C4 and a double frequency modulation control voltage generation module 3 only on the basis of the traditional ring oscillator circuit, wherein the width of a MOS tube M6 in the traditional ring oscillator circuit is equal to the sum of the widths of a sixth MOS tube M6 and a seventh MOS tube M7 in the application, so that the direct current working state of the circuit is identical.
The first control voltage Vctrl1 of the miniaturized and wide-linearity frequency-modulation-range radio frequency oscillator provided by the application is changed from 0-1.2V, the external reference direct-current voltage is fixed to be 0.75V, the second control voltage Vctrl1 is changed from 0.75-0.6V, the frequency modulation range is 9.5-11.7GHz, the frequency modulation bandwidth is 2.2GHz, and in order to compare the traditional ring oscillator circuit with the frequency modulation range of the application under the same control voltage condition, the control voltage Vctrl in the traditional ring oscillator circuit is changed from 0.6-0.75V, the frequency modulation range is 6.9-8.1GHz, and the frequency modulation bandwidth is 1.2GHz, so that the miniaturized and wide-linearity frequency-modulation-range radio frequency oscillator provided by the application can obviously improve the oscillation frequency and the frequency modulation range under the same power consumption.
The control voltage is set in the traditional resonance type oscillator circuit to change from 0-1.2V, the frequency modulation range is 10.2-10.7GHz, the frequency modulation bandwidth is 0.5GHz, the frequency modulation range is far smaller than the miniaturized wide-linear frequency modulation range radio frequency oscillator provided by the application, and the traditional resonance type oscillator provided by the traditional resonance type oscillator circuit is far larger than the size of the radio frequency oscillator integrated circuit.
As shown in FIG. 6, the simulation result of the circuit frequency modulation sensitivity with the control voltage is shown, the abscissa is the control voltage (V), the ordinate is the frequency modulation sensitivity (GHz/V), the three curves respectively represent the simulation result of the circuit frequency modulation sensitivity of three different oscillators with the control voltage, wherein the solid line represents the radio frequency oscillator of the application, the dash-dot line represents the traditional ring oscillator, and the dotted line represents the traditional resonance oscillator. The frequency modulation sensitivity of the corresponding circuit of the traditional ring oscillator is very high, meanwhile, the frequency modulation nonlinearity of the corresponding circuit of the traditional resonance type oscillator is very low, meanwhile, the frequency modulation linearity is good, and the miniaturized and wide-linearity-range radio frequency oscillator provided by the application has flat frequency modulation linearity, so that the miniaturized and wide-linearity-range radio frequency oscillator provided by the application can keep good frequency modulation linearity in a wide frequency modulation range.
In specific practical application, each MOS tube in the circuit can be replaced by a three-tube, so that the specific application environment is determined and the MOS tube is within the protection scope of the application.
The application also provides a method for generating the wide linear frequency modulation method of the radio frequency oscillator, which comprises the following steps: the voltage at the P terminal is Vref R6/(r5+r6) after the external reference dc voltage Vref is divided by the fifth resistor R5 and the sixth resistor R6, and the gain of the operational amplifier is large enough to keep the P terminal and the N terminal equal, so it is deduced that the voltage at the N terminal is Vref R6/(r5+r6), and the currents flowing through the eighth resistor R8 and the seventh resistor R7 are the same, so that:
(Vctrl 2-Vref R6/(r5+r6))/r8= (Vref R6/(r5+r6) -Vctrl 1)/R7, and simplifying to obtain vctrl2= (r8+r7) ×r6/(r5+r6)/r7×vref-vctrl1×r8/R7, adjusting the corresponding R5, R6, R7, R8 can adjust the corresponding frequency modulation linearity and frequency modulation range of the radio frequency oscillator.
In the embodiment shown in fig. 4a-4c, r8=100k, r7=800k, r6=800k, r5=100deg.C is provided, and the above formula can be simplified to vctrl2=vref-vctrl1/8.
The above description is only for the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the scope of the claims of the present application should fall within the protection scope of the present application.
Claims (6)
1. The miniature and wide-linearity frequency-modulation-range radio frequency oscillator is characterized by comprising two oscillator unit modules and a double-frequency-modulation control voltage generation module, wherein the oscillator unit modules comprise a signal amplification sub-module and a delay adjustment sub-module, the two oscillator unit modules are connected with each other, and the double-frequency-modulation control voltage generation module is simultaneously connected with the two oscillator unit modules;
the signal amplification submodule is used for providing enough voltage gain and basic circuit delay to realize a circuit starting process; the signal amplification submodule comprises a first resistor, a second resistor, a first MOS tube, a second MOS tube and a third MOS tube;
the delay adjusting submodule is used for providing negative resistance and negative capacitance so as to improve the working frequency of the oscillator and simultaneously provide a control voltage interface so as to realize wideband linear adjustment of control voltage to frequency; the delay adjusting submodule comprises a third resistor, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube, a seventh MOS tube, a first capacitor, a second capacitor, a third capacitor and a fourth capacitor;
the first resistor is connected with the first end of the first capacitor; the other end of the first capacitor is connected with the first end of the fourth resistor and the grid electrode of the fifth MOS tube, and the other end of the second capacitor is connected with the first end of the third resistor and the grid electrode of the fourth MOS tube;
the other end of the third resistor is connected with the other end of the fourth resistor and the second control voltage;
the source electrode of the fourth MOS tube is connected with the first end of the third capacitor and the drain electrode of the sixth MOS tube, and the source electrode of the fifth MOS tube is connected with the first end of the fourth capacitor and the drain electrode of the seventh MOS tube;
the other end of the third capacitor is connected with the other end of the fourth capacitor and the first control voltage;
the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube and the second bias voltage, the source electrode of the sixth MOS tube is directly grounded, and the source electrode of the seventh MOS tube is directly grounded;
the double-frequency modulation control voltage generation module is used for converting single control voltage into double control voltage, and the double control voltage has the frequency modulation effect of the same polarity to the oscillator.
2. The miniaturized, wide chirp range rf oscillator of claim 1 wherein the dual-frequency control voltage generation module includes a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor and an operational amplifier.
3. The miniaturized, wide chirp range radio frequency oscillator of claim 2, wherein the oscillator unit modules comprise a first oscillator unit module and a second oscillator unit module, the first oscillator unit module and the second oscillator unit module having the same internal structure, a first output port of the first oscillator unit module being connected to a first input port of the second oscillator unit module, a second output port of the first oscillator unit module being connected to a second input port of the second oscillator unit module, a first output port of the second oscillator unit module being connected to a second input port of the first oscillator unit module, a second output port of the second oscillator unit module being connected to a first input port of the first oscillator unit module;
the first end of the first resistor is connected to the power supply voltage, and the other end of the first resistor is used as a second output port of the oscillator unit module and is simultaneously connected with the drain electrode of the first MOS tube, the drain electrode of the fourth MOS tube and the first end of the first capacitor;
the first end of the second resistor is connected to the power supply voltage, and the other end of the second resistor is used as a first output port of the oscillator unit module and is simultaneously connected with the drain electrode of the second MOS tube, the drain electrode of the fifth MOS tube and the first end of the second capacitor;
the grid electrode of the first MOS tube is used as a first input port of the oscillator unit module, the grid electrode of the second MOS tube is used as a second input port of the oscillator unit module, and the source electrode of the first MOS tube is connected with the drain electrode of the third MOS tube and the source electrode of the second MOS tube;
the grid electrode of the third MOS tube is connected with the first bias, and the source electrode of the third MOS tube is directly grounded;
the other end of the first capacitor is connected with the first end of the fourth resistor and the grid electrode of the fifth MOS tube, and the other end of the second capacitor is connected with the first end of the third resistor and the grid electrode of the fourth MOS tube;
the other end of the third resistor is connected with the other end of the fourth resistor and the second control voltage;
the source electrode of the fourth MOS tube is connected with the first end of the third capacitor and the drain electrode of the sixth MOS tube, and the source electrode of the fifth MOS tube is connected with the first end of the fourth capacitor and the drain electrode of the seventh MOS tube;
the other end of the third capacitor is connected with the other end of the fourth capacitor and the first control voltage;
the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube and the second bias voltage, the source electrode of the sixth MOS tube is directly grounded, and the source electrode of the seventh MOS tube is directly grounded;
the first end of the fifth resistor is connected with an external reference direct-current voltage, the other end of the fifth resistor is connected with the first end of the sixth resistor and the first input end of the operational amplifier, and the other end of the sixth resistor is directly grounded;
the first end of the seventh resistor is connected with the first control voltage, the other end of the seventh resistor is connected with the first end of the eighth resistor and the second input end of the operational amplifier, and the other end of the eighth resistor is connected with the output end of the operational amplifier and the second control voltage.
4. A miniaturized, wide chirp range rf oscillator as claimed in claim 3, characterized in that the third and fourth capacitors are voltage controlled variable capacitors.
5. A radio frequency front end integrated circuit comprising the radio frequency oscillator of any of claims 1-4.
6. A wide chirp method applied to a miniaturized, wide chirp-range rf oscillator as set forth in claim 3, characterized in that said wide chirp method is used to generate said first and second control voltages, said operational amplifier has two inputs with high resistance, and when the two inputs maintain equal voltages, adjusting said fifth, sixth, seventh and eighth resistors can adjust the frequency modulation linearity and frequency modulation range of the rf oscillator.
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