CN110866370A

CN110866370A - Circuit reliability logic simulation method, device, equipment and storage medium

Info

Publication number: CN110866370A
Application number: CN201911099025.0A
Authority: CN
Inventors: 吴玉平; 陈岚; 张学连
Original assignee: Institute of Microelectronics of CAS
Current assignee: Institute of Microelectronics of CAS
Priority date: 2019-11-11
Filing date: 2019-11-11
Publication date: 2020-03-06

Abstract

The embodiment of the invention discloses a method, a device, equipment and a storage medium for simulating the reliability logic of a circuit, wherein the method comprises the following steps: acquiring the current working temperature of each electronic component and the current component parameters of each electronic component; and performing reliability logic simulation on the circuit according to the current working temperature of each electronic component and the current component parameter of each electronic component to obtain a current circuit reliability logic simulation result. The embodiment of the invention improves the speed of the reliability simulation of the circuit by adopting a circuit reliability logic simulation mode, and improves the accuracy of the reliability simulation of the circuit by adopting a mode of participating the working temperature of the electronic component in the circuit reliability logic simulation.

Description

Circuit reliability logic simulation method, device, equipment and storage medium

Technical Field

The present invention relates to circuit simulation technologies, and in particular, to a method, an apparatus, a device, and a storage medium for circuit reliability logic simulation.

Background

In order to ensure the reliability of the circuit, the circuit reliability simulation is generally required to be performed on the circuit.

In the prior art, a transient simulation mode is usually adopted to perform reliability simulation on a circuit, specifically: and obtaining the last stress of each transistor and the last circuit reliability transient simulation times. And calculating the current stress of each transistor according to the previous stress of each transistor. And calculating the current transistor parameters of each transistor according to the current stress of each crystal. And performing reliability transient simulation on the circuit according to the current transistor parameters of each transistor to obtain a current circuit reliability transient simulation result, and obtaining the current circuit reliability transient simulation times according to the previous circuit reliability transient simulation times. If the current circuit reliability transient simulation frequency is less than or equal to the simulation frequency threshold, taking the current circuit reliability transient simulation result as a new previous circuit reliability transient simulation result, and repeatedly executing the operations of calculating the current stress of each transistor, calculating the current circuit reliability transient simulation frequency and obtaining the current circuit reliability transient simulation result until the current circuit reliability transient simulation frequency is greater than or equal to the simulation frequency threshold or the cumulative duration of the circuit transient simulation is greater than or equal to the reliability working duration threshold, and ending the circuit reliability transient simulation.

However, it has been found that at least the following problems exist in the prior art: firstly, because the transient simulation process is time-consuming, for a circuit with a large scale, such as a digital system on a chip, the transient simulation is difficult to be suitable for the reliability simulation of the circuit, and the speed of the reliability simulation of the circuit is influenced; secondly, the influence of the working temperature of the transistor on the reliability of the circuit is not considered, and the accuracy of the simulation result of the reliability of the circuit is influenced.

Disclosure of Invention

The embodiment of the invention provides a method, a device, equipment and a storage medium for simulating circuit reliability logic, which are used for improving the speed of the circuit reliability simulation and the accuracy of a circuit reliability logic simulation result.

In a first aspect, an embodiment of the present invention provides a method for simulating a circuit reliability logic, where the method includes:

acquiring the current working temperature of each electronic component and the current component parameters of each electronic component;

and performing reliability logic simulation on the circuit according to the current working temperature of each electronic component and the current component parameter of each electronic component to obtain a current circuit reliability logic simulation result.

Further, the acquiring the current operating temperature of each electronic component and the current component parameter of each electronic component includes:

determining the current working temperature of each electronic component according to the reliability logic simulation result of the previous circuit and the position information of each electronic component;

and determining the current component parameters of each electronic component according to the current working temperature of each transistor and the reliability logic simulation result of the previous circuit.

Further, the determining the current operating temperature of each electronic component according to the last circuit reliability logic simulation result and the position information of each electronic component includes:

determining the power consumption of the previous circuit according to the reliability logic simulation result of the previous circuit, wherein the power consumption of the previous circuit comprises the previous power consumption of each electronic component and the previous power consumption of a connecting line between each electronic component;

setting a heat source for the circuit according to the position information of each electronic component and the power consumption of the previous circuit, and carrying out three-dimensional thermal analysis on the heat source to obtain a current circuit thermal distribution result;

and determining the current working temperature of each electronic component according to the position information of each electronic component and the current circuit heat distribution result.

Further, the determining the power consumption of the previous circuit according to the reliability logic simulation result of the previous circuit includes:

and determining the power consumption of the previous circuit according to the reliability logic simulation result of the previous circuit and the previous delay characteristic data of the logic unit of the circuit.

Further, the electronic component includes a transistor; determining the current component parameters of each electronic component according to the current working temperature of each electronic component and the last circuit reliability logic simulation result, wherein the determining comprises the following steps:

and determining the current transistor parameters of each transistor based on a transistor aging model according to the current working temperature of each transistor and the last circuit reliability logic simulation result, wherein the last circuit reliability logic simulation result comprises the last working state alternating direction of each transistor and/or the last working state alternating time of each transistor, and the current transistor parameters comprise the current threshold voltage and/or the current carrier mobility.

Further, the current transistor parameter comprises a current threshold voltage; determining the current transistor parameters of each transistor based on the transistor aging model according to the current working temperature of each transistor and the last circuit reliability logic simulation result, wherein the determining comprises the following steps:

determining the last effective voltage-bearing time of each transistor according to the last circuit reliability logic simulation result;

determining a first current drift amount of each transistor according to the last effective pressed time of each transistor, wherein the first current drift amount is a drift amount generated by the unstable effect of the bias temperature on the last threshold voltage;

determining a second current drift amount of each transistor according to the current working temperature of each transistor and the previous circuit simulation duration information, wherein the second current drift amount is a drift amount generated by hot carrier injection effect on the previous threshold voltage;

and determining the current threshold voltage of each transistor according to the first current drift amount of each transistor, the second current drift amount of each transistor and the last threshold voltage of each transistor.

Further, the position information of each electronic component is determined by at least one of the following modes:

determining the position information of each electronic component according to the physical layout of the circuit;

determining the position information of each electronic component based on a physical virtual prototype technology;

and determining the position information of each electronic component based on a layout model, wherein the layout model is generated by training of a first machine learning model.

Further, after performing reliability logic simulation on the circuit according to the current operating temperature of each electronic component and the current component parameter of each electronic component to obtain a current circuit reliability logic simulation result, the method further includes:

and if the current circuit reliability logic simulation end condition is not met, taking the current circuit reliability logic simulation result as a new last circuit reliability logic simulation result, and repeatedly executing the operations of determining the current working temperature of each electronic component, determining the current component parameters of each electronic component and obtaining the current circuit reliability logic simulation result until the circuit reliability logic simulation end condition is met, ending the circuit reliability logic simulation, wherein the circuit reliability logic simulation end condition comprises that the current circuit reliability logic simulation frequency is more than or equal to a simulation frequency threshold value or the current circuit reliability logic simulation result is inconsistent with the last circuit reliability logic simulation result.

acquiring the current simulation times;

inputting the current simulation times into a temperature prediction model to obtain the current working temperature of each electronic component, and inputting the current simulation times into a component parameter prediction model to obtain the current component parameters of each electronic component, wherein the temperature prediction model is generated by training of a second machine learning model, and the component parameter prediction model is generated by training of a third machine learning model.

Further, the temperature prediction model is generated by training of a second machine learning model, and comprises:

acquiring first training samples of each electronic component, wherein each first training sample comprises historical working temperature of the electronic component and historical simulation times corresponding to the historical working temperature;

for each electronic component, training a second machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical working temperatures of the electronic component as input variables and the historical working temperatures of the electronic component as output variables to obtain a trained second machine learning model;

and taking each trained second machine learning model as the temperature prediction model.

Further, the component parameter prediction model is generated by training a third machine learning model, and includes:

acquiring second training samples of each electronic component, wherein each second training sample comprises historical component parameters of the electronic component and historical simulation times corresponding to the historical component parameters;

for each electronic component, taking the historical simulation times corresponding to the historical component parameters of the electronic component as input variables, taking the historical component parameters of the electronic component as output variables, and training a third machine learning model corresponding to the electronic component to obtain a trained third machine learning model;

and taking each trained third machine learning model as the component parameter prediction model.

Furthermore, the circuit reliability logic simulation corresponding to different current simulation times is executed in parallel.

In a second aspect, an embodiment of the present invention further provides a circuit reliability logic simulation apparatus, where the apparatus includes:

the current parameter acquisition module is used for acquiring the current working temperature of each electronic component and the current component parameters of each electronic component;

and the current circuit reliability logic simulation result obtaining module is used for performing reliability logic simulation on the circuit according to the current working temperature of each electronic component and the current component parameter of each electronic component to obtain a current circuit reliability logic simulation result.

In a third aspect, an embodiment of the present invention further provides an apparatus, where the apparatus includes:

one or more processors;

a memory for storing one or more programs;

when executed by the one or more processors, cause the one or more processors to implement a method as described in the first aspect of embodiments of the invention.

In a fourth aspect, the present invention further provides a computer-readable storage medium, on which a computer program is stored, which when executed by a processor implements the method according to the first aspect of the present invention.

According to the method and the device, the current working temperature of each electronic component and the current component parameters of each electronic component are obtained, the reliability logic simulation is carried out on the circuit according to the current working temperature of each electronic component and the current component parameters of each electronic component, and the current circuit reliability logic simulation result is obtained.

Drawings

FIG. 1 is a flow chart of a method for simulating circuit reliability logic in an embodiment of the invention;

FIG. 2 is a flow diagram of another method for circuit reliability logic simulation in an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a circuit reliability logic simulation apparatus according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of an apparatus in an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and not restrictive thereof, and that various features described in the embodiments may be combined to form multiple alternatives. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

A circuit is understood to be a conductive loop that is made up of electronic components and connections between electronic components that have a certain function. The electronic components may include electronic elements and electronic devices, among others. The electronic components may include resistors, capacitors, inductors, and the like. The electronic devices may include transistors, electron tubes, and the like. The circuit can be divided into a digital circuit and an analog circuit.

In the process of performing reliability simulation on the reliability of the circuit, the operating temperature of the electronic component will affect the reliability of the circuit, that is, the reliability of the circuit is affected by the operating temperature of the electronic component. The above shows that the working temperature of the electronic component needs to be involved in the reliability simulation process of the circuit, so as to improve the accuracy of the reliability simulation result of the circuit. The influence of the working temperature of the electronic components on the reliability of the circuit is not considered in the traditional technology. Therefore, in order to improve the accuracy of the reliability simulation result of the circuit, the working temperature of the electronic component can be considered to participate in the reliability simulation process of the circuit. In addition, because the conventional technology adopts transient simulation, the transient simulation consumes a long time, and cannot be applied to reliability simulation of a circuit with a large scale, and the speed of the reliability simulation of the circuit is influenced, the logic simulation can be considered to be adopted in order to improve the speed of the reliability simulation of the circuit. Logic simulation, or logic simulation, may refer to the prediction and verification of circuit behavior defined by a hardware description language, and may be generally implemented by computer simulation. The logic simulation may be performed at different levels of physical abstraction (i.e., levels), such as transistor level, logic gate level, register transfer level, and behavioral level. The basic principle of logic simulation is to use computer software to simulate an excitation signal to obtain the response behavior of the designed circuit.

In order to improve the accuracy of the circuit reliability simulation result and improve the speed of the circuit reliability simulation, the embodiment of the present invention is implemented by using the operating temperature of the electronic component to participate in the reliability simulation process of the circuit and performing the circuit reliability logic simulation, and the following description will be made with reference to a specific embodiment. Before the description is made with reference to the specific embodiments, in order to facilitate understanding of the technical solutions provided by the embodiments of the present invention, the following first describes some concepts, specifically:

the number of times of the reliability logic simulation can be set according to actual conditions, and is not particularly limited herein. And obtaining a reliability logic simulation result corresponding to the reliability logic simulation result every time the reliability logic simulation is completed, namely, the reliability logic simulation corresponds to one reliability logic simulation result every time. The reliability logic simulation result may include the working state alternation direction of each electronic component and/or the working state alternation time of each electronic component, and may further include the working temperature of the electronic component and the component parameters of the electronic component. The alternate direction of the working state of the electronic component can be understood as the jump direction when the signal output by the electronic component generates jump in the circuit reliability logic simulation process, and the jump direction can comprise from high level to low level and from low level to high level. The working state alternation time of the electronic components can be understood as the corresponding time point when the signals output by the electronic components generate jumping in the circuit reliability logic simulation process. According to the sequence of obtaining the reliability logic simulation results, two adjacent reliability logic simulation results can be divided into a previous reliability logic simulation result and a current reliability logic simulation result. The current reliability logic simulation result can be understood as a reliability logic simulation result obtained by performing reliability logic simulation on the circuit at present. The last reliability logic simulation result is the last reliability logic simulation result of the current reliability logic simulation result, and correspondingly, the current reliability logic simulation result is the next reliability logic simulation result of the last reliability logic simulation result. It is to be understood that the current logic result and the previous logic result are used to distinguish the obtained logic results from each other, and the current logic result and the previous logic result include the same contents, but the values and/or results of the contents may be different. That is, the current reliability logic simulation result may include the working state alternating direction of each electronic component and the working state alternating time of each electronic component, and may further include the working temperature of each electronic component and the component parameter of each electronic component, and the previous reliability logic simulation result may also include the working state alternating direction of each electronic component and/or the working state alternating time of each transistor, and may further include the working temperature of each electronic component and the component parameter of each electronic component. The difference between the current reliability logic simulation result and the previous reliability logic simulation result may be a specific result of the working state alternation direction of each electronic component, a specific numerical value of the working state alternation time of each electronic component, the working temperature of each electronic component, and a component parameter of each electronic component. Correspondingly, the working state alternating direction of each electronic component in the current reliability logic simulation result can be referred to as the current working state alternating direction of each electronic component, the working state alternating time of each electronic component in the current reliability logic simulation result can be referred to as the current working state alternating time of each electronic component, the working temperature of each electronic component in the current reliability logic simulation result can be referred to as the current working temperature of each electronic component, and the component parameter of each electronic component in the current reliability logic simulation result can be referred to as the current component parameter of each electronic component. The alternating direction of the working states of the electronic components in the previous reliability logic simulation result can be referred to as the alternating direction of the previous working state of the electronic components, the alternating time of the working states of the electronic components in the previous reliability logic simulation result can be referred to as the alternating time of the previous working state of the electronic components, the working temperature of the electronic components in the previous reliability logic simulation result can be referred to as the previous working temperature of the electronic components, and the component parameters of the electronic components in the previous reliability logic simulation result can be referred to as the previous component parameters of the electronic components. Based on this, the current reliability logic simulation result may include the current working state alternating direction of each electronic component and/or the current working state alternating time of each transistor, and may further include the current working temperature of each electronic component and the current component parameter of each electronic component. The last reliability logic simulation result may include a last working state alternation direction of each electronic component and/or a last working state alternation time of each electronic component, and may further include a last working temperature of each electronic component and a last unitary device parameter of each electronic component.

In addition, if the parameters participating in obtaining the reliability logic simulation results may be changed, the parameters participating in obtaining the current reliability logic simulation result may be referred to as current parameters, and the parameters participating in obtaining the previous reliability logic simulation result may be referred to as previous parameters. The parameters that may be changed may include operating temperatures of the electronic components, component parameters of the electronic components, and the like. Correspondingly, the current parameters participating in obtaining the current reliability logic simulation result may include the current operating temperature of each electronic component, the current component parameters of each electronic component, and the like. The last parameter participating in obtaining the last reliability logic simulation result may include a last operating temperature of each electronic component, a last component parameter of each electronic component, and the like. If the parameters participating in obtaining the reliability logic simulation results are not changed, the parameters participating in obtaining the reliability logic simulation results can not be distinguished. The parameters participating in obtaining the current reliability logic simulation result and the parameters participating in obtaining the last reliability logic simulation result are not distinguished. The parameters that do not change may include positional information of the respective electronic components, and the like. That is, the position information of each electronic component participating in obtaining the current reliability logic simulation result is referred to as the position information of each electronic component, and the position information of each electronic component participating in obtaining the previous reliability logic simulation result is also referred to as the position information of each electronic component.

The technical solutions provided by the embodiments of the present invention will be described below with reference to specific embodiments.

Fig. 1 is a flowchart of a circuit reliability logic simulation method according to an embodiment of the present invention, where the present embodiment is applicable to a situation where speed of circuit reliability simulation and accuracy of a circuit reliability logic simulation result are improved, the method may be executed by a circuit reliability logic simulation apparatus, the apparatus may be implemented in a software and/or hardware manner, and the apparatus may be configured in a device, such as a computer. As shown in fig. 1, the method specifically includes the following steps:

and 110, acquiring the current working temperature of each electronic component and the current component parameters of each electronic component.

In the embodiment of the invention, because the operating temperature of the electronic component can affect the reliability of the circuit, in order to improve the accuracy of the reliability logic simulation of the circuit, the operating temperature of the electronic component can be taken into consideration as a parameter when the reliability logic simulation is carried out on the circuit. Also, the operating temperature of the electronic component is a parameter that may vary. Since more than one circuit reliability logic simulation may be performed, and the operating temperature of the electronic component is a parameter that may change, that is, the operating temperature of each electronic component participating in the current circuit reliability logic simulation may be different from the operating temperature of each electronic component participating in the previous circuit reliability logic simulation, in order to improve the accuracy of the circuit reliability logic simulation result, it is necessary to obtain the current operating temperature of each electronic component before performing the circuit reliability logic simulation each time. The current operating temperature of the electronic component is understood to be the current operating temperature of the electronic component. The electronic component may include a transistor.

The current temperature of each electronic component can be obtained in the following way: the current working temperature of each electronic component can be determined according to the reliability logic simulation result of the previous circuit and the position information of each electronic component. The position information of each electronic component can be determined by at least one of the following modes: and determining the position information of each electronic component according to the physical layout of the circuit. And determining the position information of each electronic component based on a physical virtual prototype technology. And determining the position information of each electronic component based on a layout model, wherein the layout model is generated by training of a first machine learning model. The current component parameters of each electronic component can be acquired in the following way: the current component parameters of each electronic component can be determined according to the current working temperature of each transistor and the reliability logic simulation result of the previous circuit.

In addition, after the circuit reliability logic simulation of the preset simulation times is carried out on the circuit, a temperature prediction model can be established according to the determined working temperature of the electronic component corresponding to each simulation time and each simulation time, and the temperature prediction model can be generated by training of the second machine learning model. The simulation frequency may be referred to as a historical simulation frequency, and the operating temperature of the electronic component corresponding to each historical simulation frequency may be referred to as a historical operating temperature of the electronic component. Based on this, the current operating temperature of each electronic component is obtained, which can be understood as follows: the current simulation times can be obtained, and the current simulation times are input into the temperature prediction model to obtain the current working temperature of each electronic component. The temperature prediction model may be generated by a second machine learning model training, as may be understood as follows: training the training samples based on the second machine learning model generates a pre-trained temperature prediction model. The method specifically comprises the following steps: the method comprises the steps of obtaining first training samples of all electronic components, wherein each first training sample comprises historical working temperature of the electronic components and historical simulation times corresponding to the historical working temperature. And for each electronic component, training a second machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical operating temperatures of the electronic component as input variables and the historical operating temperatures of the electronic component as output variables to obtain the trained second machine learning model. And taking each trained second machine learning model as a temperature prediction model.

Similarly, after the circuit reliability logic simulation of the preset simulation times is performed on the circuit, a component parameter prediction model can be established according to the determined component parameters of the electronic component corresponding to the simulation times and the simulation times, and the component parameter prediction model can be generated by training of a third machine learning model. The simulation times can be called historical simulation times, and the component parameters of the electronic component corresponding to the historical simulation times can be called the historical component parameters of the electronic component. Based on this, the current component parameters of each electronic component are obtained, which can be understood as follows: the current simulation times can be obtained, and the current simulation times are input into the component parameter prediction model to obtain the current component parameters of each electronic component. The component parameter prediction model may be generated by training a third machine learning model, as can be understood as follows: and training the training samples based on the third machine learning model to generate a pre-trained component parameter prediction model. The method specifically comprises the following steps: and acquiring second training samples of each electronic component, wherein each second training sample comprises historical component parameters of the electronic component and historical simulation times corresponding to the historical component parameters. And for each electronic component, training a third machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical component parameters of the electronic component as input variables and the historical component parameters of the electronic component as output variables to obtain the trained third machine learning model. And taking each trained third machine learning model as a component parameter prediction model.

And 120, performing reliability logic simulation on the circuit according to the current working temperature of each electronic component and the current component parameter of each electronic component to obtain a current circuit reliability logic simulation result.

In the embodiment of the invention, after the current working temperature and the current component tube parameters of each electronic component are obtained, the reliability logic simulation can be performed on the circuit according to the current working temperature and the current component parameters of each electronic component, so as to obtain the current circuit reliability logic simulation result.

It should be noted that, after the circuit reliability logic simulation of the preset simulation times is performed on the circuit, the current operating temperature corresponding to the current simulation times is obtained based on the temperature prediction model, and when the component parameter corresponding to the current simulation times is obtained based on the component parameter prediction model, the circuit reliability logic simulations corresponding to different current simulation times can be executed in parallel for different current simulation times after the preset simulation times. Illustratively, the pth number is taken as the current simulation number, and the qth number is taken as the current simulation number.

The speed of the circuit reliability simulation is improved by adopting the circuit reliability logic simulation mode, and the accuracy of the circuit reliability simulation is improved by adopting the mode of participating the working temperature of the electronic component in the circuit reliability logic simulation.

According to the technical scheme of the embodiment, the reliability logic simulation is performed on the circuit according to the current working temperature of each electronic component and the current component parameter of each electronic component by obtaining the current working temperature of each electronic component and the current component parameter of each electronic component, so that the current circuit reliability logic simulation result is obtained.

Optionally, on the basis of the above technical scheme, obtaining the current operating temperature of each electronic component and the current electronic component parameter of each component may specifically include: and determining the current working temperature of each electronic component according to the reliability logic simulation result of the previous circuit and the position information of each electronic component. And determining the current component parameters of each electronic component according to the current working temperature of each transistor and the reliability logic simulation result of the previous circuit.

In the embodiment of the present invention, the current operating temperature of each electronic component may be determined according to the last circuit reliability logic simulation result and the position information of each electronic component, which may be understood as follows: the last circuit reliability logic simulation result can comprise the last working state alternating direction of each electronic component and/or the last working state alternating time of each transistor, and can also comprise the last working temperature of each electronic component and the last element parameter of each electronic component. The alternating direction of the last working state of the electronic component can be understood as the jumping direction when the signal output by the electronic component jumps in the last circuit reliability logic simulation process, and the jumping direction can include from high level to low level and from low level to high level. The alternative time of the last working state of the electronic component can understand the corresponding time point when the signal output by the electronic component jumps in the last circuit reliability logic simulation process. The positional information of an electronic component is understood to mean the position of the electronic component in the circuit. And aiming at each electronic component, determining the current working temperature of the electronic component according to the reliability logic simulation result of the previous circuit and the position information of the electronic component. Based on this, the current operating temperature of each electronic component can be obtained.

The electronic component may comprise a transistor and the current transistor parameter may comprise a current threshold voltage and/or a current carrier mobility. Wherein, the current threshold voltage of the transistor can refer to the threshold voltage of the transistor in the current circuit reliability logic simulation. The carrier mobility can refer to the speed of movement of electrons and holes in the semiconductor. The carrier mobility of a transistor may refer to how fast electrons and holes move in bulk within the transistor. The current carrier mobility of a transistor may refer to the carrier mobility of the transistor in current circuit reliability logic simulations.

After the current operating temperature of each transistor is obtained, the current transistor parameters of each transistor can be determined according to the current operating temperature of each transistor and the previous circuit reliability logic simulation result, that is, for each transistor, the current transistor parameters of the transistor can be determined according to the previous circuit reliability logic simulation result and the current operating temperature of the transistor. Based on this, the current transistor parameters of each transistor can be obtained. Alternatively, the current transistor parameter of the transistor may comprise a current threshold voltage of the transistor. Determining the current transistor parameters of each transistor according to the current working temperature of each transistor and the last circuit reliability logic simulation result can be understood as follows: and determining the last effective voltage-bearing time of each transistor according to the last circuit reliability logic simulation result. Determining a first current drift amount of each electronic component according to the last effective stressed time of each crystal, wherein the first current drift amount is a drift amount generated by Bias Temperature Instability (NBTI) on the last threshold voltage. And determining a second current drift amount of each electronic component according to the current working temperature of each electronic component and the previous circuit simulation time length information, wherein the second current drift amount is a drift amount generated by Hot Carrier Injection (HCI) on the previous threshold voltage. And determining the current threshold voltage of each transistor according to the first current drift amount of each electronic component, the second current drift amount of each electronic component and the last threshold voltage of each electronic component.

Optionally, on the basis of the above technical scheme, determining the current operating temperature of each electronic component according to the last circuit reliability logic simulation result and the position information of each electronic component may specifically include: and determining the power consumption of the previous circuit according to the reliability logic simulation result of the previous circuit, wherein the power consumption of the previous circuit comprises the previous power consumption of each electronic component and the previous power consumption of a connecting line between each electronic component, and each electronic component comprises a transistor. And setting a heat source for the circuit according to the position information of each electronic component and the power consumption of the previous circuit, and carrying out three-dimensional thermal analysis on the heat source to obtain a current circuit thermal distribution result. And determining the current working temperature of each electronic component according to the position information of each electronic component and the current circuit heat distribution result.

In an embodiment of the present invention, the power consumption of the circuit may include power consumption of each electronic component and power consumption of a connection line between each electronic component. The power consumption may include an average power consumption or a maximum power consumption, and accordingly, the circuit power consumption may include an average power consumption of each electronic component and an average power consumption of a connection line between the electronic components, or the circuit power consumption may include a maximum power consumption of each electronic component and a maximum power consumption of a connection line between the electronic components. Alternatively, the circuit power consumption may include an average power consumption of the electronic components and a maximum power consumption of the connection line between the electronic components. Alternatively, the circuit power consumption may include the maximum power consumption of the electronic components and the average power consumption of the connection lines between the electronic components. Accordingly, the last circuit power consumption may include the last power consumption of each electronic component and the last power consumption of the connection line between each electronic component. Three-dimensional thermal analysis may be achieved by a three-dimensional thermal analysis tool, such as finite element analysis. The electronic component may include a transistor.

The power consumption of the previous circuit can be determined according to the reliability logic simulation result of the previous circuit, a heat source can be set for the circuit according to the position information of each electronic component and the power consumption of the previous circuit, and the heat source can be subjected to three-dimensional thermal analysis to obtain the current circuit thermal distribution result. After the current circuit thermal distribution result is obtained, the current working temperature of each electronic component can be determined according to the position information of each electronic component and the current circuit thermal distribution result, namely, for each electronic component, the current working temperature of the electronic component can be determined according to the current circuit thermal distribution result and the position information of the electronic component. Based on this, the current operating temperature of each electronic component is obtained.

Optionally, on the basis of the above technical solution, determining power consumption of the previous circuit according to a reliability logic simulation result of the previous circuit may specifically include: and determining the power consumption of the previous circuit according to the reliability logic simulation result of the previous circuit and the previous delay characteristic data of the logic unit of the circuit.

In the embodiment of the invention, in order to improve the accuracy of determining the power consumption of the circuit, the delay characteristic data of the logic unit of the circuit can be obtained, and based on the delay characteristic data, the power consumption of the circuit can be determined according to the reliability logic simulation result of the circuit and the delay characteristic data of the logic unit of the circuit. And aiming at the power consumption of the previous circuit, the previous delay characteristic data of the logic unit of the circuit can be obtained, and the power consumption of the previous circuit can be determined according to the reliability logic simulation result of the previous circuit and the previous delay characteristic data of the logic unit of the circuit.

It is understood that the delay characteristic data of the logic unit of the circuit can play a role in determining the power consumption of the circuit and participating in the reliability logic simulation of the circuit, because the delay characteristic data of the logic unit of the circuit can participate in determining the power consumption of the circuit and the reliability logic simulation of the circuit.

Optionally, on the basis of the above technical solution, the electronic component includes a transistor. Determining the current component parameters of each transistor according to the current working temperature of each electronic component and the last circuit reliability logic simulation result, which may specifically include: and calculating the current transistor parameters of each transistor based on the transistor aging model according to the current working temperature of each transistor and the last circuit reliability logic simulation result, wherein the last circuit reliability logic simulation result comprises the last working state alternating direction of each transistor and/or the last working state alternating time of each transistor, and the current transistor parameters comprise the current threshold voltage and/or the current carrier mobility.

In an embodiment of the present invention, the electronic component may include a transistor. The transistor aging model may be a model of transistor parameters that may be used to calculate a transistor for a transistor formed as the transistor parameters vary with circuit usage. The last circuit reliability logic simulation result may include the last operation state alternation direction of each transistor and/or the last operation state alternation time of each transistor, as can be understood as follows: the last circuit reliability logic simulation result may include the last operating state alternation direction of each transistor. Alternatively, the last circuit reliability logic simulation result may include the last operating state alternation time of each transistor. Alternatively, the last circuit reliability logic simulation result may include a last operation state alternation direction of each transistor and a last operation state alternation time of each transistor. The alternating direction of the last working state of the transistor can be understood as the transition direction when the signal output by the transistor generates a transition in the last circuit reliability logic simulation process, and the transition direction can comprise from high level to low level and from low level to high level. The last working state alternation time of the transistor can be understood as the corresponding time point when the signal output by the transistor generates jump in the last circuit reliability logic simulation process. In addition, the last reliability logic simulation result may also include a last operating temperature of each transistor and a last transistor parameter of each transistor. The current transistor parameters may include a current threshold voltage and/or a current carrier mobility.

Based on the above, the current transistor parameter of each transistor may be determined based on the transistor aging model according to the current operating temperature of each transistor and the previous circuit reliability logic simulation result, that is, for each transistor, the current transistor parameter of the transistor may be determined based on the transistor aging model according to the previous circuit reliability logic simulation result and the current operating temperature of the transistor. Based on this, the current transistor parameters of each transistor can be obtained.

Optionally, on the basis of the above technical solution, the current transistor parameter includes a current threshold voltage. Determining the current transistor parameters of each transistor based on the transistor aging model according to the current operating temperature of each transistor and the last circuit reliability logic simulation result, which may specifically include: and determining the last effective voltage-bearing time of each transistor according to the last circuit reliability logic simulation result. And determining a first current drift amount of each transistor according to the last effective stressed time of each transistor, wherein the first current drift amount is a drift amount generated by the bias temperature instability effect on the last threshold voltage. And determining a second current drift amount of each transistor according to the current working temperature of each transistor and the last circuit simulation time length information, wherein the second current drift amount is a drift amount generated by the hot carrier injection effect on the last threshold voltage. And determining the current threshold voltage of each transistor according to the first current drift amount of each transistor, the second current drift amount of each transistor and the last threshold voltage of each transistor.

In the embodiment of the present invention, the last circuit simulation time length information may refer to time length information consumed by the last circuit reliability logic simulation, and the last threshold voltage is a threshold voltage obtained by the last circuit reliability logic simulation. The bias temperature instability effect may refer to degradation of a range of transistor parameters caused by applying a negative gate voltage to the transistor at high temperatures. The hot carrier injection effect can be understood as follows: hot carriers may refer to carriers having high energy, i.e., carriers having kinetic energy higher than the average thermal motion energy. When the carrier obtains larger energy from the outside, the hot carrier injection can be realized. Under the action of strong electric field, the carriers can drift along the direction of the electric field and accelerate continuously to obtain larger energy, thereby becoming hot carriers. Hot carriers, on the one hand, extract energy from the electric field and, on the other hand, transfer the energy to the lattice by scattering in the channel. However, the energy obtained by the hot carriers exceeds the energy transferred to the lattice, so that the hot carriers have enough energy to cross the interface potential barrier, and therefore, a part of the hot carriers are left at the interface to generate an interface state, and the other part of the hot carriers enter the gate oxide layer to form trapped charges. With the gradual accumulation of the above-described loss, the performance degradation of the transistor tends to be severe. The above-mentioned effect caused by hot carriers may be referred to as a hot carrier injection effect.

If the current transistor parameters may include the current threshold voltage, determining the current transistor parameters of each transistor based on the transistor aging model according to the current operating temperature of each transistor and the last circuit reliability logic simulation result, as can be understood as follows: determining last effective pressed time of each electronic component according to a last circuit reliability logic simulation result, determining first current drift amount of each electronic component according to the last effective pressed time of each electronic component, wherein the first current drift amount can be the drift amount generated by bias temperature instability effect on last threshold voltage, determining second current drift amount of each electronic component according to current working temperature of each electronic component and last circuit simulation time length information, the second current drift amount can be the drift amount generated by hot carrier injection effect on last threshold voltage, determining current threshold voltage of each electronic component according to the first current drift amount of each electronic component, the second current drift amount of each electronic component and the last threshold voltage of each electronic component, namely determining the current threshold voltage of each electronic component according to the last effective time of each electronic component for each electronic component, determining a first current drift amount of the electronic component, determining a second current drift amount of the electronic component according to the current working temperature of the electronic component and the previous circuit simulation time length information, and determining a current threshold voltage of the electronic component according to the first current drift amount of the electronic component, the second current drift amount of the electronic component and the previous threshold voltage of the electronic component. Based on this, the current threshold voltage of each electronic component can be obtained.

Optionally, on the basis of the above technical solution, the position information of each electronic component may be determined in at least one of the following manners:

and determining the position information of each electronic component according to the physical layout of the circuit.

And determining the position information of each electronic component based on a physical virtual prototype technology.

Position information of each electronic component is determined based on a layout model, which may be generated by a first machine learning model training.

In the embodiment of the present invention, the physical layout may refer to a geometric figure into which a circuit netlist expressed in an abstract form such as a hardware description language is converted after processes such as layout and wiring are performed in a physical design, that is, the geometric figure is the physical layout. The physical layout comprises position information of each electronic component, and the physical layout can be used for determining the position information of the electronic components. A virtual prototype may refer to a simulatable digital model generated from product design information or product concepts that is as similar as possible to an actual product in terms of functional, behavioral, and sensory characteristics. The physical virtual prototype technology can refer to an effective means for performing collaborative simulation verification on product design information in a virtual realistic environment. Physical virtual prototype techniques can be used to determine the location information of the transistors. The layout model may be a model generated by training of the first machine learning model, and the layout model may be used to determine positional information of the electronic component.

Based on the above, for the position information of each electronic component, the position information of the electronic component may be determined in at least one of the following manners, specifically: and determining the position information of the electronic component according to the physical layout of the circuit. Or determining the position information of the electronic component based on a physical virtual prototype technology. Alternatively, the position information of the electronic component is determined based on a layout model, which may be generated by a first machine learning model training. Or, the position information of the electronic component is determined based on a physical virtual prototype technology and according to the physical layout of the circuit. Or, the position information of the electronic component is determined based on the layout model and according to the physical layout of the circuit. Or determining the position information of the electronic component based on a physical virtual prototype technology and a layout model. Or, the position information of the electronic component is determined based on a physical virtual prototype technology, based on a layout model and according to the physical layout information of the circuit.

Optionally, on the basis of the above technical scheme, after performing reliability logic simulation on the circuit according to the current operating temperature of each electronic component and the current component parameter of each electronic component, and obtaining a current circuit reliability logic simulation result, the method may specifically include: if the circuit reliability logic simulation end condition is not met, taking the current circuit reliability logic simulation result as a new last circuit reliability logic simulation result, and repeatedly executing the operations of determining the current working temperature of each electronic component, determining the current component parameters of each electronic component and obtaining the current circuit reliability logic simulation result until the circuit reliability logic simulation end condition is met, ending the circuit reliability logic simulation, wherein the circuit reliability logic simulation end condition comprises that the current circuit reliability logic simulation frequency is more than or equal to the simulation frequency threshold value or the current circuit reliability logic simulation result is inconsistent with the last circuit reliability logic simulation result.

In embodiments of the present invention, a circuit reliability logic simulation end condition may be used as a basis for determining whether to end a circuit reliability logic simulation. The end condition of the circuit reliability logic simulation can include that the current circuit reliability logic simulation times are larger than or equal to the simulation time threshold, or the current circuit reliability logic simulation result is inconsistent with the previous circuit reliability logic simulation result. The simulation time threshold can be used as one of the bases for determining whether to end the circuit reliability logic simulation. The specific value of the simulation time threshold may be set according to actual conditions, and is not particularly limited herein. Illustratively, the threshold number of simulations is 100. Based on this, if the current circuit reliability logic simulation result times are larger than or equal to the simulation times threshold, the circuit reliability logic simulation can be ended. Or, if the current circuit reliability logic simulation result is inconsistent with the last circuit reliability logic simulation result, the circuit reliability logic simulation can be ended.

For the reason that if the simulation result times of the current circuit reliability logic simulation are greater than or equal to the simulation time threshold, the circuit reliability logic simulation can be ended, the following understanding can be made: before the circuit reliability logic simulation is carried out each time, the simulation times of the previous circuit reliability logic can be obtained, and after the current circuit reliability logic simulation is completed, the simulation times can be increased on the basis of the simulation times of the previous circuit reliability logic to obtain the current circuit reliability logic simulation times. And determining whether the simulation times of the current circuit reliability logic are greater than or equal to the simulation time threshold, and if the simulation times of the current circuit reliability logic are less than the simulation time threshold, continuing the circuit reliability logic simulation. If the simulation times of the current circuit reliability logic are more than or equal to the threshold of the simulation times, the circuit reliability logic simulation can be ended.

For the reason that if the current circuit reliability logic simulation result is inconsistent with the previous circuit reliability logic simulation result, the circuit reliability logic simulation can be ended, which can be understood as follows: if the circuit can guarantee reliability, the reliability logic simulation results of each circuit of the circuit should be consistent. If the reliability logic simulation results of the circuits of the circuit are inconsistent, it can be shown that the reliability of the circuit may not be guaranteed, and at this time, the reliability logic simulation of the circuit needs to be ended. Whether the reliability logic simulation results of all the circuits of the circuit are consistent can be reflected by whether the reliability logic simulation results of two adjacent circuits are consistent. The two adjacent circuit reliability logic simulation results can be a current circuit reliability logic simulation result and a last circuit reliability logic simulation result. Based on this, if the current circuit reliability logic simulation result is inconsistent with the previous circuit reliability logic simulation result, it can be shown that the circuit reliability may not be ensured, and the circuit reliability logic simulation can be ended.

After the current working temperature and the current component parameters of each electronic component are obtained, the reliability logic simulation can be performed on the circuit according to the current working temperature and the current component parameters of each electronic component, so that a current circuit reliability logic simulation result is obtained. And determining whether a circuit reliability logic simulation end condition is met, wherein if the circuit reliability logic simulation end condition is met, the circuit reliability logic simulation can be ended. If the end condition of the circuit reliability logic simulation is not met, the requirement can be indicated to continue, the current circuit reliability logic simulation result can be used as a new last circuit reliability logic simulation result, the operation of determining the current working temperature of each electronic component, determining the current component parameter of each electronic component and obtaining the current circuit reliability logic simulation result can be returned to be executed until the end instruction of the circuit reliability logic simulation result is met, and the circuit reliability logic simulation can be ended. It should be noted that, when the current operating temperature of each electronic component is determined according to the previous circuit reliability logic simulation result and the position information of each electronic component in each execution, the previous circuit reliability logic simulation result is a new previous circuit reliability logic simulation result.

Optionally, on the basis of the above technical scheme, obtaining the current operating temperature of each electronic component and the current component parameter of each electronic component may specifically include: and acquiring the current simulation times. And inputting the current simulation times into the component parameter prediction model to obtain the current component parameters of each electronic component, wherein the temperature prediction model is generated by training of a second machine learning model, and the component parameter prediction model is generated by training of a third machine learning model.

In the embodiment of the invention, the simulation times can be obtained each time when the circuit reliability logic simulation is carried out, if the last simulation time is greater than or equal to the model time threshold, a temperature prediction model can be established according to the determined working temperature of the electronic component corresponding to each simulation time and each simulation time, and the temperature prediction model can be generated by the training of the second machine learning model. The temperature prediction model may represent a mapping between the number of simulations and the operating temperature. And establishing a component parameter prediction model according to the determined component parameters of the electronic components corresponding to the simulation times and the simulation times, wherein the component parameter prediction model can be generated by training of a third machine learning model. The simulation times can be referred to as historical simulation times, the operating temperature of the electronic component corresponding to each historical simulation time can be referred to as the historical operating temperature of the electronic component, and the component parameters of the electronic component corresponding to each historical simulation time can be referred to as the historical component parameters of the electronic component.

Based on this, the current operating temperature of each electronic component is obtained, which can be understood as follows: first training samples of the electronic components can be obtained, and each first training sample comprises historical working temperature of the electronic components and historical simulation times corresponding to the historical working temperature. And for each electronic component, training a second machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical operating temperatures of the electronic component as input variables and the historical operating temperatures of the electronic component as output variables to obtain the trained second machine learning model. And taking each trained second machine learning model as a temperature prediction model.

The current component parameters of each electronic component are obtained, which can be understood as follows: second training samples of the electronic components can be obtained, and each second training sample comprises historical component parameters of the electronic components and historical simulation times corresponding to the historical component parameters. And for each electronic component, training a third machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical component parameters of the electronic component as input variables and the historical component parameters of the electronic component as output variables to obtain the trained third machine learning model. And taking each trained third machine learning model as a component parameter prediction model.

Optionally, on the basis of the above technical solution, the temperature prediction model is generated by training a second machine learning model, and specifically may include: the method comprises the steps of obtaining first training samples of all electronic components, wherein each first training sample comprises historical working temperature of the electronic components and historical simulation times corresponding to the historical working temperature. And for each electronic component, training a second machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical operating temperatures of the electronic component as input variables and the historical operating temperatures of the electronic component as output variables to obtain the trained second machine learning model. And taking each trained second machine learning model as a temperature prediction model.

In the embodiment of the invention, the current simulation times are input into the temperature prediction model to obtain the current working temperature of each electronic component, namely the current simulation times are input into the second machine learning model corresponding to each electronic component to obtain the current working temperature of each electronic component.

Optionally, on the basis of the above technical scheme, the component parameter prediction model is generated by training of a third machine learning model, and specifically, the method may include: and acquiring second training samples of the electronic components, wherein each second training sample comprises historical component parameters of the electronic components and historical simulation times corresponding to the historical component parameters. And for each electronic component, training a third machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical component parameters of the electronic component as input variables and the historical component parameters of the electronic component as output variables to obtain the trained third machine learning model. And taking each trained third machine learning model as a component parameter prediction model.

In the embodiment of the invention, the current simulation times are input into the component parameter prediction model to obtain the current component parameters of each electronic component, namely the current simulation times are input into the third machine learning model corresponding to each electronic component to obtain the current component parameters of each electronic component.

Optionally, on the basis of the above technical scheme, after performing reliability logic simulation on the circuit according to the current operating temperature of each electronic component and the current component parameter of each electronic component, and obtaining a current circuit reliability logic simulation result, the method may specifically include: and if the circuit reliability logic simulation ending condition is not met, repeatedly executing the operations of determining the current working temperature of each electronic component, determining the current component parameter of each electronic component and obtaining the current circuit reliability logic simulation result until the circuit reliability logic simulation ending condition is met, ending the circuit reliability logic simulation, wherein the circuit reliability logic simulation ending condition comprises that the current circuit reliability logic simulation frequency is more than or equal to the simulation frequency threshold value or the current circuit reliability logic simulation result is inconsistent with the previous circuit reliability logic simulation result.

It should be noted that, in the manner of determining the current operating temperature of the electronic component based on the temperature prediction model and determining the current component parameter of the electronic component based on the component parameter prediction model, the middle-portion circuit reliability logic simulation can be reasonably skipped, that is, the current operating temperature and the current component parameter of the electronic component are not determined according to the previous circuit reliability logic simulation result. The current simulation times can be directly input into the corresponding prediction model to obtain the current working temperature of each electronic component and the current component parameters of each electronic component.

Optionally, on the basis of the above technical solution, the circuit reliability logic simulations corresponding to different current simulation times may be executed in parallel.

In the embodiment of the invention, after the circuit reliability logic simulation of the preset simulation times is carried out on the circuit, the circuit reliability logic simulations corresponding to different current simulation times after the preset simulation times can be executed in parallel. Illustratively, if the P-th time after the preset simulation time is taken as the current simulation time, and the Q-th time after the preset simulation time is taken as the current simulation time, correspondingly, the circuit reliability logic simulation corresponding to the P-th current simulation time can be taken as the P-th circuit reliability logic simulation, and the circuit reliability logic simulation corresponding to the Q-th current logic simulation can be taken as the Q-th circuit reliability logic simulation, then the P-th circuit reliability logic simulation and the Q-th circuit reliability logic simulation can be executed independently and in parallel.

This further increases the speed of circuit reliability logic simulation, verification and inspection.

Fig. 2 is a flowchart of another circuit reliability logic simulation method according to an embodiment of the present invention, which is a specific example of the foregoing embodiment. The present embodiment may be applied to the situation of improving the speed of the circuit reliability simulation and the accuracy of the circuit reliability logic simulation result, and the method may be executed by a circuit reliability logic simulation apparatus, which may be implemented in a software and/or hardware manner, and may be configured in a device, such as a computer, as a typical example. As shown in fig. 2, the method specifically includes the following steps:

step 210, determining the power consumption of the previous circuit according to the reliability logic simulation result of the previous circuit and the previous delay characteristic data of the logic unit of the circuit, wherein the power consumption of the previous circuit comprises the previous power consumption of each electronic component and the previous power consumption of the connecting line between each electronic component, and each electronic component comprises a transistor.

And step 220, setting a heat source for the circuit according to the position information of each electronic component and the power consumption of the previous circuit, and performing three-dimensional thermal analysis on the heat source to obtain a current circuit thermal distribution result.

And step 230, determining the current working temperature of each transistor according to the position information of each transistor and the current circuit heat distribution result.

And 240, determining current transistor parameters of each transistor based on the transistor aging model according to the current working temperature of each transistor and a previous circuit reliability logic simulation result, wherein the previous circuit reliability logic simulation result comprises a previous working state alternating direction of each transistor and/or a previous working state alternating time of each transistor, and the current transistor parameters comprise a current threshold voltage and/or a current carrier mobility.

And step 250, performing reliability logic simulation on the circuit according to the current working temperature of each transistor and the current transistor parameter of each transistor to obtain a current circuit reliability logic simulation result, and taking the current circuit reliability logic simulation result as a new previous circuit reliability logic simulation result.

Step 260, determining whether a circuit reliability logic simulation end condition is met; if not, go to step 270; if yes, go to step 280.

And 270, taking the current circuit reliability logic simulation result as a new last circuit reliability logic simulation result, and returning to execute the step 210.

And step 280, ending the circuit reliability logic simulation.

In the embodiment of the present invention, the end condition of the circuit reliability logic simulation may include that the current circuit reliability logic simulation number is greater than or equal to the simulation number threshold or that the current circuit reliability logic simulation result is inconsistent with the current circuit reliability logic simulation result.

The current transistor parameter includes a current threshold voltage. Determining the current transistor parameters of each transistor based on the transistor aging model according to the current operating temperature of each transistor and the last circuit reliability logic simulation result, which may specifically include: and determining the last effective voltage-bearing time of each transistor according to the last circuit reliability logic simulation result. And determining a first current drift amount of each transistor according to the last effective stressed time of each transistor, wherein the first current drift amount is a drift amount generated by the bias temperature instability effect on the last threshold voltage. And determining a second current drift amount of each transistor according to the current working temperature of each transistor and the last circuit simulation time length information, wherein the second current drift amount is a drift amount generated by the hot carrier injection effect on the last threshold voltage. And determining the current threshold voltage of each transistor according to the first current drift amount of each transistor, the second current drift amount of each transistor and the last threshold voltage of each transistor.

The positional information of each transistor may be determined by at least one of: and determining the position information of each transistor according to the physical layout of the circuit. Based on the physical virtual prototype technique, position information of each transistor is determined. Position information for each transistor is determined based on a layout model, which may be generated by first machine learning model training.

According to the technical scheme, the speed of the circuit reliability simulation is improved by adopting a circuit reliability logic simulation mode, and the accuracy of the circuit reliability simulation is improved by adopting a mode of participating the working temperature of the electronic component in the circuit reliability logic simulation.

Fig. 3 is a schematic structural diagram of a circuit reliability logic simulation apparatus according to an embodiment of the present invention, where the present embodiment is applicable to a situation where speed of circuit reliability simulation and accuracy of a circuit reliability logic simulation result are improved, the apparatus may be implemented in a software and/or hardware manner, and the apparatus may be configured in a device, such as a computer. As shown in fig. 3, the apparatus specifically includes:

a current parameter obtaining module 310, configured to obtain a current operating temperature of each electronic component and a current component parameter of each electronic component.

The current circuit reliability logic simulation result obtaining module 320 is configured to perform reliability logic simulation on the circuit according to the current operating temperature of each electronic component and the current component parameter of each electronic component, so as to obtain a current circuit reliability logic simulation result.

Optionally, on the basis of the foregoing technical solution, the current parameter obtaining module 310 may specifically include:

and the current working temperature determining submodule is used for determining the current working temperature of each electronic component according to the reliability logic simulation result of the previous circuit and the position information of each electronic component.

And the current component parameter determining submodule is used for determining the current component parameters of each electronic component according to the current working temperature of each transistor and the reliability logic simulation result of the previous circuit.

Optionally, the current operating temperature determining sub-module may specifically include:

and the last circuit power consumption determining unit is used for determining the last circuit power consumption according to the last circuit reliability logic simulation result, wherein the last circuit power consumption comprises the last power consumption of each electronic component and the last power consumption of the connecting line between each electronic component.

And the current circuit thermal distribution result determining unit is used for setting a heat source for the circuit according to the position information of each electronic component and the power consumption of the previous circuit, and performing three-dimensional thermal analysis on the heat source to obtain a current circuit thermal distribution result.

And the current working temperature determining unit is used for determining the current working temperature of each electronic component according to the position information of each electronic component and the current circuit heat distribution result.

Optionally, on the basis of the above technical solution, the previous circuit power consumption determining unit may be specifically configured to:

Optionally, on the basis of the above technical solution, the electronic component includes a transistor.

The current component parameter determination submodule specifically may include:

and the current transistor parameter determining unit is used for determining the current transistor parameters of the transistors based on the transistor aging model according to the current working temperature of each transistor and the last circuit reliability logic simulation result, the last circuit reliability logic simulation result comprises the last working state alternating direction of each transistor and/or the last working state alternating time of each transistor, and the current transistor parameters comprise the current threshold voltage and/or the current carrier mobility.

Optionally, on the basis of the above technical solution, the current transistor parameter includes a current threshold voltage.

The present transistor parameter determination unit may specifically be configured to:

and determining the last effective voltage-bearing time of each transistor according to the last circuit reliability logic simulation result.

And determining a first current drift amount of each transistor according to the last effective stressed time of each transistor, wherein the first current drift amount is a drift amount generated by the bias temperature instability effect on the last threshold voltage.

And determining a second current drift amount of each transistor according to the current working temperature of each transistor and the last circuit simulation time length information, wherein the second current drift amount is a drift amount generated by the hot carrier injection effect on the last threshold voltage.

Optionally, on the basis of the above technical solution, the apparatus may further include:

and the repeated execution module is used for taking the current circuit reliability logic simulation result as a new previous circuit reliability logic simulation result if the circuit reliability logic simulation end condition is not met, and repeatedly executing the operations of determining the current working temperature of each electronic component, determining the current component parameter of each electronic component and obtaining the current circuit reliability logic simulation result until the circuit reliability logic simulation end condition is met, so that the circuit reliability logic simulation is ended, wherein the circuit reliability logic simulation end condition comprises that the current circuit reliability logic simulation frequency is more than or equal to the simulation frequency threshold value or the current circuit reliability logic simulation result is inconsistent with the previous circuit reliability logic simulation result.

and the current simulation times obtaining submodule is used for obtaining the current simulation times.

And the current parameter acquisition submodule is used for inputting the current simulation times into the temperature prediction model to obtain the current working temperature of each electronic component, and inputting the current simulation times into the component parameter prediction model to obtain the current component parameters of each electronic component, the temperature prediction model is generated by training of the second machine learning model, and the component parameter prediction model is generated by training of the third machine learning model.

Optionally, on the basis of the above technical solution, the temperature prediction model is generated by training a second machine learning model, and specifically may include:

the method comprises the steps of obtaining first training samples of all electronic components, wherein each first training sample comprises historical working temperature of the electronic components and historical simulation times corresponding to the historical working temperature.

And for each electronic component, training a second machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical operating temperatures of the electronic component as input variables and the historical operating temperatures of the electronic component as output variables to obtain the trained second machine learning model.

And taking each trained second learning model as a temperature prediction model.

Optionally, on the basis of the above technical scheme, the component parameter prediction model is generated by training of a third machine learning model, and specifically, the method may include:

and acquiring second training samples of the electronic components, wherein each second training sample comprises historical component parameters of the electronic components and historical simulation times corresponding to the historical component parameters.

And for each electronic component, training a third machine learning model corresponding to the electronic component by taking the historical simulation times corresponding to the historical component parameters of the electronic component as input variables and the historical component parameters of the electronic component as output variables to obtain the trained third machine learning model.

And taking each trained third machine learning model as a component parameter prediction model.

Optionally, on the basis of the above technical solution, the circuit reliability logic simulation corresponding to different current simulation times is executed in parallel.

The circuit reliability logic simulation device configured to the device provided by the embodiment of the invention can execute the circuit reliability logic simulation method applied to the device provided by any embodiment of the invention, and has the corresponding functional module and the beneficial effect of the execution method.

Fig. 4 is a schematic structural diagram of an apparatus according to an embodiment of the present invention. FIG. 4 illustrates a block diagram of an exemplary device 412 suitable for use in implementing embodiments of the present invention. The device 412 shown in fig. 4 is only an example and should not impose any limitation on the functionality or scope of use of embodiments of the present invention.

As shown in FIG. 4, device 412 is in the form of a general purpose computing device. The components of device 412 may include, but are not limited to: one or more processors 416, a system memory 428, and a bus 418 that couples the various system components including the system memory 428 and the processors 416.

Bus 418 represents one or more of any of several types of bus structures, including a memory bus or memory controller, a peripheral bus, an accelerated graphics port, and a processor or local bus using any of a variety of bus architectures. By way of example, such architectures include, but are not limited to, an Industry Standard Architecture (ISA) bus, a Micro Channel Architecture (MCA) bus, an enhanced ISA (ISA) bus, a Video Electronics Standards Association (VESA) local bus, and a Peripheral Component Interconnect (PCI) bus.

Device 412 typically includes a variety of computer system readable media. Such media can be any available media that is accessible by mobile device 412 and includes both volatile and nonvolatile media, removable and non-removable media.

The system Memory 428 may include computer system readable media in the form of volatile Memory, such as Random Access Memory (RAM) 430 and/or cache Memory 432. The device 412 may further include other removable/non-removable, volatile/nonvolatile computer system storage media. By way of example only, storage system 434 may be used to read from and write to non-removable, nonvolatile magnetic media (not shown in FIG. 4, commonly referred to as a "hard drive"). Although not shown in FIG. 4, a magnetic disk drive for reading from and writing to a removable, nonvolatile magnetic disk (e.g., a "floppy disk") and an optical disk drive for reading from or writing to a removable, nonvolatile optical disk (e.g., a Computer disk Read-Only Memory, CD-ROM), Digital Video disk (DVD-ROM), or other optical media) may be provided. In these cases, each drive may be connected to bus 418 by one or more data media interfaces. Memory 428 can include at least one program product having a set (e.g., at least one) of program modules that are configured to carry out the functions of embodiments of the invention.

A program/utility 440 having a set (at least one) of program modules 442 may be stored, for instance, in memory 428, such program modules 442 including, but not limited to, an operating system, one or more application programs, other program modules, and program data, each of which examples or some combination thereof may comprise an implementation of a network environment. The program modules 442 generally perform the functions and/or methodologies of the described embodiments of the invention.

The device 412 may also communicate with one or more external devices 414 (e.g., keyboard, pointing device, display 424, etc.), with one or more devices that enable a user to interact with the device 412, and/or with any devices (e.g., network card, modem, etc.) that enable the device 412 to communicate with one or more other computing devices. Such communication may occur via input/output (I/O) interfaces 422. Also, the device 512 may communicate with one or more networks (e.g., a Local Area Network (LAN), Wide Area Network (WAN), and/or a public Network, such as the internet) via the Network adapter 420. As shown, network adapter 420 communicates with the other modules of device 412 over bus 418. It should be appreciated that although not shown in FIG. 4, other hardware and/or software modules may be used in conjunction with device 412, including but not limited to: microcode, device drivers, Redundant processing units, external disk drive Arrays, disk array (RAID) systems, tape drives, and data backup storage systems, to name a few.

The processor 416 executes various functional applications and data processing by running programs stored in the system memory 428, for example, to implement a circuit reliability logic simulation method provided by the embodiment of the present invention, the method includes:

and acquiring the current working temperature of each electronic component and the current component parameters of each electronic component.

Of course, those skilled in the art will understand that the processor may also implement the technical solution of the method for simulating the circuit reliability logic applied to the device provided by any embodiment of the present invention. The hardware structure and the function of the device can be explained with reference to the contents of the embodiment.

An embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored, where the computer program, when executed by a processor, implements a method for simulating a circuit reliability logic according to an embodiment of the present invention, where the method includes:

Computer storage media for embodiments of the invention may employ any combination of one or more computer-readable media. The computer readable medium may be a computer readable signal medium or a computer readable storage medium. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples (a non-exhaustive list) of the computer readable storage medium would include the following: an electrical connection having one or more wires, a portable Computer diskette, a hard disk, a Random Access Memory (RAM), a Read-Only Memory (ROM), an erasable programmable Read-Only Memory (EPROM), a flash Memory, an optical fiber, a portable compact Disc Read-Only Memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of this document, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.

A computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated data signal may take many forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device.

Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, radio frequency, etc., or any suitable combination of the foregoing.

Computer program code for carrying out operations for aspects of the present invention may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C + + or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of Network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet service provider).

Of course, the computer-readable storage medium provided by the embodiments of the present invention has computer-executable instructions that are not limited to the operations of the method described above, and may also perform operations related to the method for simulating the circuit reliability logic of the device provided by any embodiments of the present invention. The description of the storage medium is explained with reference to the embodiments.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims

1. A method for simulating a circuit reliability logic, comprising:

2. The method of claim 1, wherein the obtaining the current operating temperature of each electronic component and the current electronic component parameter of each component comprises:

3. The method of claim 2, wherein determining the current operating temperature of each electronic component based on the previous circuit reliability logic simulation result and the position information of each electronic component comprises:

4. The method of claim 3, wherein determining a last circuit power consumption from a last circuit reliability logic simulation result comprises:

5. The method of any of claims 2-4, wherein the electronic component comprises a transistor;

determining the current component parameters of each electronic component according to the current working temperature of each electronic component and the last circuit reliability logic simulation result, wherein the determining comprises the following steps:

6. The method of claim 5, wherein the current transistor parameter comprises a current threshold voltage;

determining the current transistor parameters of each transistor based on the transistor aging model according to the current working temperature of each transistor and the last circuit reliability logic simulation result, wherein the determining comprises the following steps:

7. A method according to any of claims 1-4, characterized in that the position information of the electronic components is determined by at least one of the following:

8. The method according to any one of claims 2 to 4, wherein after performing reliability logic simulation on the circuit according to the current operating temperature of each electronic component and the current component parameter of each electronic component to obtain a current circuit reliability logic simulation result, the method further comprises:

9. The method of claim 1, wherein the obtaining the current operating temperature of each electronic component and the current component parameters of each electronic component comprises:

acquiring the current simulation times;

10. The method of claim 9, wherein the temperature prediction model is generated by a second machine learning model training comprising:

11. The method of claim 9 or 10, wherein the component parameter prediction model is generated by a third machine learning model training, comprising:

12. Method according to claim 9 or 10, characterized in that the circuit reliability logic simulations corresponding to different numbers of current simulations are performed in parallel.

13. A circuit reliability logic simulation apparatus, comprising:

14. An apparatus, comprising:

one or more processors;

a memory for storing one or more programs;

when executed by the one or more processors, cause the one or more processors to implement the method of any one of claims 1-12.

15. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the method according to any one of claims 1 to 12.