CN110862065A - Nano electronic component manufactured by using structural DNA as template and method thereof - Google Patents
Nano electronic component manufactured by using structural DNA as template and method thereof Download PDFInfo
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- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0042—Assembling discrete nanostructures into nanostructural devices
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- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
A nanometer electronic component and a method thereof which are manufactured by taking structural DNA as a template relate to the field of nanometer science. The nanometer electronic component manufactured by taking the structural DNA as the template comprises a one-dimensional two-dimensional three-dimensional structure which can be constructed by a rectangle, a triangle, a pentagram, a triangle structure, a cylinder structure, a Mobius band structure and the like. Designing a DNA tile self-assembly graph and a DNA Origami self-assembly graph as templates, and conducting by using a method of wrapping, carbonizing, ALD growing metal, metal oxide, metal nitride and element replacement. Or assembling RNA, protein, polypeptide, polysaccharide, biological small molecule, biological macromolecule, organic small molecule, organic macromolecule, etc. to obtain the template. The volume is small, the performance of an electronic device can be improved, and the resolution reaches 2 nm; can be used for manufacturing nanometer devices and circuits with complete functions. The method can be applied to the fields of medicine, electronic sensing and the like, the appearance is controllable at will, and the operation method is simple.
Description
Technical Field
The invention relates to the field of nano science, in particular to a nano electronic component and a method thereof which are manufactured by taking structural DNA as a template.
Background
The nanometer (nm) scale is a bridge connecting the micro-world and the macro-world, and the aggregation of atoms and molecules is generally on the nanometer scale and shows distinct properties, even macroscopic objects. Therefore, the property of the material with the structure size of 1-100 nm has attracted the attention of scientists. The development of nano science and technology has driven many emerging disciplines related to nano, such as nanomedicine, nanochemistry, nanoelectronics, nanomaterials science, nanobiology and the like, which makes nano become a highly crossed and integrated research field of disciplines.
Nanoelectronics is an important branch of the field of nanotechnology, and is the main driver for nanotechnology development. Nanoelectronics builds electronic devices and systems on the basis of traditional solid-state electronics, with the help of the latest physical theory and the most advanced technological means, and according to a completely new concept. The capacity of nano electronics to develop potential information and structures of substances at a deeper level enables the functions of storing and processing information of substances in unit volume to be improved by more than one million times, and revolutionary breakthrough of information acquisition and processing capacity is realized. With the development of the electronics industry, the speed and complexity requirements for electronic devices are constantly increasing. The traditional method for manufacturing electronic devices from top to bottom is not enough to meet the demand, so that the development of a completely new method for preparing electronic devices with higher performance is urgently needed.
DNA (deoxyribose nucleic acid) is a carrier of genetic information in most organisms, and natural double-stranded DNA can generally form a double-helix structure through base complementary pairing (A-T, C-G). Wherein the hydrophilic phosphate and glycosyl are used as the skeleton outside, and the hydrophobic nitrogenous bases are paired in pairs. Compared with biological macromolecules such as protein and the like, the DNA structure is more stable, simple and controllable.
In 1982, professor N.C. Seeman (Seeman, Nadrian C.nucleic acid junctions and standards. journal of the Theoretical Biology 99.2(1982): 237-. The Seeman teaches that two-dimensional or even three-dimensional DNA nano-assemblies are obtained by assembling several DNA single strands into small modules (called DNA tiles, or DNA tiles) and then connecting the modules with sticky ends. In 2006, DNA Origami (DNA Origami) was released, announcing the beginning of a new era in the field of DNA nanotechnology. The concept of DNA Origami was proposed by the doctor Rothemuld (Rothemuld P W K. folding DNA to create nanoscales and patterns [ J ] Nature,2006,440(7082):297), which folds and bends a long single DNA strand to form a specific structure by base complementary pairing between the long single DNA strand (called scaffold strand) and a series of short single DNA strands (called staple strand). The sequence of the staple chain is changed to obtain a specific nanometer pattern. Since then, many researchers have designed various combinatorial patterns and three-dimensional structures using DNA Origami.
The DNA has stable physicochemical properties and a unique structure, and the space conformation, thermodynamics, atomic nucleus and electron dynamics of the DNA can promote long-distance electron transmission, in addition, the structural DNA self-assembly technology has the characteristic of addressing, so that the inorganic nano-particles based on the structural DNA as a template are self-assembled to form an ordered nano-structure, and the method has important potential application value for preparing nano-devices with specific properties and requirements, and the DNA nano-technology is expected to provide a new research idea for nano-electronic science and bring a new research direction.
Disclosure of Invention
The invention aims to provide a nanometer electronic component manufactured by taking structural DNA as a template.
The invention also aims to provide a method for manufacturing a nano electronic component by using the structural DNA as a template.
The nano electronic component manufactured by taking the structural DNA as the template comprises but is not limited to a one-dimensional two-dimensional three-dimensional structure which can be constructed by a rectangle, a triangle, a pentagram, a triangle structure, a cylinder structure, a Mobius band structure and the like.
The method for manufacturing the nanometer electronic component by taking the structural DNA as the template comprises the following steps:
1) constructing a nano DNA structure model;
2) and (2) carrying out surface treatment on the nano DNA structure model obtained in the step 1) to manufacture a nano electronic component.
In step 1), the specific method for constructing the nano DNA structure model may be:
(1) constructing a three-dimensional structure including a cylindrical structure and the like using the DNA Origami; the DNA Origami takes a phage DNA M13mp18 containing 7000 bases as a long chain and 200 short-chain DNAs as an assistant, and obtains an arbitrary shape with the size of 100nm by folding M13mp 18;
(2) constructing a two-dimensional structure by using DNA tile self-assembly, wherein the two-dimensional structure comprises a planar honeycomb structure, a triangular structure and the like; the DNA tile is a branched DNA molecule basic unit with sticky ends, a four-arm cross structure is constructed by four single-stranded DNAs, and base sequences of the four sticky ends of each tile are complementary pairwise and are used for constructing various periodic graphs;
(3) combining the DNA tile with the DNA Origami to construct a two-dimensional and three-dimensional composite structure.
In step 1), the model of the nano-DNA structure includes, but is not limited to, a one-dimensional structure, and also includes a two-dimensional structure, a three-dimensional structure, and the like.
In step 1), the template size constructed by the DNA tile and DNA Origami can extend from 2nm to 1mm or even 1cm, 1 dm.
In step 2), the surface treatment method comprises wrapping, carbonizing, ALD metal growth, metal oxide, metal nitride, element replacement and the like.
The specific method for wrapping is to take the prepared DNA nano-structure template and add 1 XTAE/Mg2+(Tris-acetate acid,0.02mM；EDTA,2mM；Mg2+12.5mM) buffer solution, 10. mu.L of the DNA solution was mixed with a certain amount of aniline uniformly, and reacted at 25 ℃ for 1 hour to ensure that the DNA template was assembled with aniline as much as possible. Finally obtaining the DNA Origami wrapped by aniline.
The specific method of the carbonization is to use Al2O3Protection of DNA Origami deposited on silicon wafers in H2Heating to 800-1000 ℃ in the atmosphere for 3-5 min. Last using H3PO4Al for cleaning surface2O3Carbonizing to obtain a nano electronic device with conductive property;
the ALD growth of metals, metal oxides, and metalsThe nitride is obtained by removing ion (DI) water, ethanol, acetone and piranha solution (V)Concentrated H2SO4:V35％H2O27:3) adsorbing the diluted DNAOrigami or DNA tile on the washed silicon wafer. The silicon wafer is placed in an ALD reaction chamber, and the corresponding ALD cycle parameters are set: for example, when depositing layers of TiN molecules, we use TiCl4And NH3The power of the radio frequency source is set to be 100W, the pressure of the cavity is about 100Pa, and the pressure of the reaction chamber is about 100 Pa. The chamber and substrate were heated to 380 ℃. Pulse-type ALD working chamber is filled with ALD precursor compound TiCl4Setting the pulse to 0.2s and introducing a pulse of inert purge gas such as high purity N into the ALD chamber2Removing excessive TiCl4Setting the purging time to be 2 s; pulsing NH into ALD chamber3Setting the pulse to 0.2 s; introducing N into ALD working chamber2Pulsing off excess NH3Setting the purging time to be 3 s; and repeating the steps, setting deposition cycle for 200 times, and estimating to obtain a TiN molecular layer with the thickness of 3-5 nm to obtain the nano electronic component which is prepared by taking the structural DNA as a template and is subjected to atomic force deposition of metal, metal oxide and metal nitride.
The invention designs a DNA tile self-assembly graph and a DNA Origami self-assembly graph as templates to prepare the nano electronic device. The template used by the invention can be assembled by DNA, RNA, protein, polypeptide, polysaccharide, biological micromolecule, biological macromolecule, organic micromolecule, organic macromolecule and the like, or even any two or three of the two or the three or the last step, for example, the DNA assembly is combined with the RNA assembly to obtain a new type of assembly, which provides a wider idea for the design of the template, namely, the nano device can be designed, developed and developed by using more biological molecules and not limited to protein, glycoprotein, polysaccharide, phospholipid and enzyme. As various biomolecules are applied to the nano-assembly technology, a variety of composite materials having specific properties and functions will be further developed in the nano-field, not limited to the nano-electronics field. In addition, the surface treatment methods used in the present invention include, but are not limited to, carbonization, atomic layer deposition (ALD, Atomi)c layerdepuration) method for growing metal, metal oxide, metal nitride and element replacement. CF can be selected when ALD coats and grows metal, metal oxide and metal nitridexOr polymers can be effective in selective area growth, i.e., growth of specific metals, metal oxides, and metal nitrides on a structural DNA template, while inhibiting ALD deposition on the substrate.
Compared with the prior art, the invention has the outstanding advantages that:
1. with the development of the electronic industry, the requirements on the speed and the complexity of an electronic device are continuously improved, the requirements cannot be met by the traditional top-down manufacturing method of the electronic device, the performance of the electronic device can be greatly improved by adopting the bottom-up manufacturing method, the resolution reaches 2nm, and a new thought is provided for preparing a novel nano electronic device;
2. the existing nanometer device needs to have a microscopic or macroscopic interface, and can realize complete functions only by obtaining external input or control through the interface;
3. the traditional electronic device can only process the electronic device with smaller size by realizing the aims of smaller size, faster speed and cooler, and certain processing error is inevitably introduced when the electronic device is processed with the small size, so that the working parameters of the device are directly influenced, and the product yield is greatly reduced. The nano electronic device constructed by using the structural DNA has the advantage of small volume, and a logic structure capable of running can be realized by means of array self-assembly;
the DNA has stable physicochemical properties and a unique structure, and the space conformation, thermodynamics, atomic nucleus and electron dynamics of the DNA can realize long-distance electron transmission, so that the DNA is an ideal material for a novel nano electronic device;
5. the DNA nano electronic device obtained by the invention can be added with functional parts to be a practical novel electronic device, can meet the actual production and living needs, is applied to other scientific fields on the basis of meeting the future requirements of human beings, and promotes the scientific development of new generation in China.
Drawings
FIG. 1 is a diagram showing a structure of a cylinder for DNA Origami construction.
FIG. 2 is a plan view of a honeycomb constructed by DNA Origami.
FIG. 3 is a process flow of preparing carbon material nano electronic components by carbonizing DNA Origami triangular structures.
Each of the labels in the figure is: 1-cylindraceous DNA Origami; 2-a silicon wafer; 3-cellular DNA tile; 4-triangular DNA Origami.
Detailed Description
The following examples will further illustrate the present invention with reference to the accompanying drawings. The present embodiment is implemented on the premise of the technical solution of the present invention, and the protection scope of the present invention is not limited to the following embodiments.
The nano electronic component manufactured by taking the structural DNA as the template comprises but is not limited to a one-dimensional two-dimensional three-dimensional structure which can be constructed by a rectangle, a triangle, a pentagram, a triangle structure, a cylinder structure, a Mobius band structure and the like.
The method for manufacturing the nanometer electronic component by taking the structural DNA as the template comprises the following steps:
1) constructing a nano DNA structure model:
(1) constructing a three-dimensional structure using DNA Origami, including a cylindrical structure (see FIG. 1), and the like; the DNAorigami is prepared by taking a phage DNA M13mp18 containing 7000 bases as a long chain and 200 short chain DNAs as an auxiliary, and folding M13mp18 to obtain an arbitrary shape with the size of 100 nm;
the nano DNA structure model includes, but is not limited to, a one-dimensional structure, a two-dimensional structure, a three-dimensional structure, and the like.
The size of the template constructed by the DNA tile and the DNA Origami can extend from 2nm to 1mm or even 1cm and 1 dm.
(2) Constructing a two-dimensional structure by using DNA tile self-assembly, wherein the two-dimensional structure comprises a plane honeycomb structure (shown in figure 2), a triangular structure (shown in figure 3) and the like; the DNA tile is a branched DNA molecule basic unit with sticky ends, a four-arm cross structure is constructed by four single-stranded DNAs, and base sequences of the four sticky ends of each tile are complementary pairwise and are used for constructing various periodic graphs;
(3) combining the DNA tile with the DNA Origami to construct a two-dimensional and three-dimensional composite structure.
2) And (2) carrying out surface treatment on the nano DNA structure model obtained in the step 1) to manufacture a nano electronic component. The surface treatment method comprises the steps of coating, carbonizing, ALD growing metal, metal oxide, metal nitride, element replacement and the like.
The specific method for wrapping is to take the prepared DNA nano-structure template and add 1 XTAE/Mg2+(Tris-acetate acid,0.02mM；EDTA,2mM；Mg2+12.5mM) buffer solution, 10. mu.L of the DNA solution was mixed with a certain amount of aniline uniformly, and reacted at 25 ℃ for 1 hour to ensure that the DNA template was assembled with aniline as much as possible. Finally obtaining the DNA Origami wrapped by aniline.
The specific method of the carbonization is to use Al2O3Protection of DNA Origami deposited on silicon wafers in H2Heating to 800-1000 ℃ in the atmosphere for 3-5 min. Last using H3PO4Al for cleaning surface2O3And carbonizing to obtain the nano electronic device with the conductive property.
The specific method for growing metals, metal oxides and metal nitrides by ALD is to grow metals, metal oxides and metal nitrides by using Deionized (DI) water, ethanol, acetone and a piranha solution (V)Concentrated H2SO4:V35％H2O27:3) adsorbing the diluted DNAOrigami or DNA tile on the washed silicon wafer. The silicon wafer is placed in an ALD reaction chamber, and the corresponding ALD cycle parameters are set: for example, when depositing layers of TiN molecules, we use TiCl4And NH3The power of the radio frequency source is set to be 100W, the pressure of the cavity is about 100Pa, and the pressure of the reaction chamber is about 100 Pa. The chamber and substrate were heated to 380 ℃. Pulse-type ALD working chamber is filled with ALD precursor compound TiCl4Setting the pulse to 0.2s and introducing a pulse of inert purge gas such as high purity N into the ALD chamber2Removing excessive TiCl4Is provided with a blowerThe scanning time is 2 s; pulsing NH into ALD chamber3Setting the pulse to 0.2 s; introducing N into ALD working chamber2Pulsing off excess NH3Setting the purging time to be 3 s; and repeating the steps, setting deposition cycle for 200 times, and estimating to obtain a TiN molecular layer with the thickness of 3-5 nm to obtain the nano electronic component which is prepared by taking the structural DNA as a template and is subjected to atomic force deposition of metal, metal oxide and metal nitride.
Specific examples are given below.
Example 1
1. A mixture of M13mp18 scaffold chain and 200 staple chains was required to design a cylindrical DNA Origami.
2. According to scaffold chains: the staple chain is mixed at a concentration ratio of 1: 2 in a mixture containing 1 XTAE/Mg2+And (3) uniformly mixing the buffer solution, putting the mixture into a PCR instrument for 6-8h of annealing assembly to obtain cylindrical DNA Origami.
3. The assembled cylindrical DNA Origami (1) is treated with 1 XTAE/Mg2+Diluting with buffer solution 20 times, depositing on newly stripped silicon wafer (2), washing with deionized water after 2min deposition, and washing with N2And (5) drying. Characterization was performed using an Atomic Force Microscope (AFM) tapping mode, as shown in fig. 1.
4. The assembled cylindrical DNA Origami was deposited on a clean 5X 5cm silicon wafer which had been treated with piranha solution overnight. After deposition for 30min to 1h, washing with deionized water and N2And drying, and placing the silicon wafer in an ALD working chamber by using clean tweezers.
5. Using Trimethylaluminum (TMA) and NH3Is a precursor.
6. Setting the technological parameters of ALD deposition, wherein the power of the radio frequency source is 300W, the pressure of the cavity is about 800Pa, and the pressure of the reaction chamber is about 200 Pa. The chamber and substrate were heated to 200 ℃ in advance and the ALD precursor compound TMA was pulsed into the ALD chamber for 0.8 s.
7. With N2For the carrier gas, purge 3s to remove excess TMA.
8. By pulseForm feeding NH into ALD chamber3The setup time was 10 s.
9. Introducing N into ALD working chamber2Pulsing off excess NH3The purge time was set to 1 s.
10. And repeating the step 6-9, setting deposition circulation for 200 times, and predicting the AlN thin film thickness to be 15-20 nm.
11. The prepared sandwich-like silicon wafer substrate was placed in the center of a quartz plate of a fused quartz tube.
12. Evacuating the furnace tube H2The gas was flowed at a rate of 2.0 standard cubic centimeters per minute (sccm) at a pressure of 70 millitorr for 5 min.
13. H at 2.0sccm2Heating the furnace to 800 ℃, and recording the time when the furnace is heated to 800 ℃;
14. at H2The substrate was cooled to room temperature under air flow and taken out of the tube furnace.
15. Etching the AlN film by using 12mol/L HCl solution, and washing by using 1mol/L HCl and deionized water after etching for 1h to obtain the nano electronic component manufactured by using the cylindrical structure DNA as the template.
Example 2
1. The honeycomb plane-shaped DNA tiles are designed by the principle of adjacent connection of tiles with cohesive end complementation, and a plurality of 5 kinds of 3-arm DNA tiles are needed.
2. DNA tile was mixed with 1 XTAE/Mg2+And (4) mixing the buffer solutions, uniformly mixing, and then putting into a PCR instrument for annealing and assembling for 6-8 h. Cellular DNA tile (3) was obtained as shown in FIG. 2.
3. 1 XTAE/Mg was used for the honeycomb-plane-shaped DNA tile obtained by the assembly2+Diluting with buffer solution 20 times, depositing on the newly peeled mica sheet, washing with deionized water after 2min of deposition, and washing with N2And (5) drying. Characterization was performed using AFM tapping mode.
4. The honeycomb-plane-shaped DNA tile obtained by the assembly was diluted 20-fold with 1 XTAE buffer solution and deposited on a clean 5X 5cm silicon wafer previously treated with 1X 1016ions/cm2Implantation dose ion implantation CF of3Formation of ultra-thin CF3A hydrophobic layer. Depositing for 30 min-1 h, washing with deionized water,using N in combination2And (5) drying. The wafer was placed in the ALD chamber with clean tweezers.
5. Using trimethyl (methylcyclopentadienyl) platinum (IV) (MeCpPtMe)3–C5H4CH3Pt(CH3)3) And ozone as a precursor; MeCpPtMe3–C5H4CH3Pt(CH3)3First preheated to 65 c and stabilized at this temperature prior to deposition.
6. The process parameters of ALD deposition are set, the power of the radio frequency source is 100W, the pressure of the cavity is about 800Pa, and the pressure of the reaction chamber is about 200 Pa. The chamber and substrate were preheated to 70 ℃ and the ALD chamber was pulsed with the ALD precursor compound MeCpPtMe3The set pulse is 0.2 s.
7. Introducing pulses of inert purge gas, e.g. high purity N, into the ALD chamber2Removal of excess MeCpPtMe3The purge time was set to 15 s.
8. Ozone is introduced into the ALD working chamber in a pulse mode, and the pulse is set to be 0.1 s.
9. Introducing N into ALD working chamber2The pulse removed excess ozone and set the purge time to 15 s.
10. And growing for about 20min to obtain a Pt layer, thus obtaining the nano electronic component manufactured by taking the honeycomb planar structure DNA as the template.
Example 3
FIG. 3 shows the process flow of preparing carbon material nano electronic components by carbonizing the DNA Origami triangular structure.
1. The triangular DNA Origami (4) was designed, requiring a M13mp18 scaffold chain, 200 staple chain mixtures.
2. Mixing at a concentration ratio of 1 XTAE/Mg to 1: 22+And (3) uniformly mixing the buffer solution, and then putting the mixture into a PCR instrument for annealing and assembling for 6-8 h. The DNA Origami with a triangular structure is obtained.
3. 1 XTAE/Mg is used for assembling the DNA Origami with the triangular structure2+Diluting with buffer solution 20 times, depositing on the newly peeled mica sheet, depositing for 2min, washing with deionized water,using N in combination2And (5) drying. Characterization was performed using AFM tapping mode.
4. 1 XTAE/Mg is used for assembling the DNA Origami with the triangular structure2+The buffer was diluted 20 times and deposited on a clean 5X 5cm silicon wafer which was previously spin coated with a 3% PMMA toluene solution to prepare a PMMA film. After deposition for 30min to 1h, washing with deionized water and N2And (5) drying. The wafer was placed in the ALD chamber with clean tweezers.
5. Using TiCl4And NH3Is a precursor.
6. Setting the process parameters of ALD deposition, wherein the power of the radio frequency source is 100W, the pressure of the cavity is about 100Pa, and the pressure of the reaction chamber is about 100 Pa. The chamber and substrate were heated to 380 ℃. Pulse-type ALD working chamber is filled with ALD precursor compound TiCl4The set pulse is 0.2 s.
7. Introducing pulses of inert purge gas, e.g. high purity N, into the ALD chamber2Removing excessive TiCl4The purge time was set to 2 s.
8. Pulsing NH into ALD chamber3The set pulse is 0.2 s.
9. Introducing N into ALD working chamber2Pulsing off excess NH3The purge time was set to 3 s.
10. And repeating the step 6-9, setting a deposition cycle for 200 times, and predicting to obtain a TiN molecular layer with the thickness of 3-5 nm to obtain the nano electronic component manufactured by taking the DNA with the triangular structure as the template.
The invention provides a preparation method of a nano-scale electronic device by taking DNA as a template, wherein the DNA self-assembly technology can provide the template with controllable shape for the preparation of the nano-scale electronic device, and the nano-scale electronic device is electrically conducted by using a method of wrapping, carbonizing and ALD (atomic layer deposition) for growing metal, metal oxide, metal nitride and element replacement. The nano electronic device can be applied to the fields of medicine, electronic sensing and the like, for example, a large-scale nano integrated circuit is formed, and the nano electronic device has great influence on the development of data storage and computers in the future. The invention proves that the DNA self-assembly nano structure can be converted into the electronic nano structure with the same shape, the shape is arbitrary and controllable, and the operation method is simple.
Claims (9)
1. The method for manufacturing the nanometer electronic component by taking the structural DNA as the template is characterized by comprising the following steps:
1) constructing a nano DNA structure model;
2) and (2) carrying out surface treatment on the nano DNA structure model obtained in the step 1) to manufacture a nano electronic component.
2. The method for manufacturing a nano electronic component using a structural DNA as a template according to claim 1, wherein in the step 1), the specific method for constructing the nano DNA structural model is as follows:
(1) constructing a three-dimensional structure, including a cylindrical structure, using DNA Origami; the DNA Origami takes a phage DNA M13mp18 containing 7000 bases as a long chain and 200 short-chain DNAs as an assistant, and obtains an arbitrary shape with the size of 100nm by folding M13mp 18;
(2) constructing a two-dimensional structure by using DNA tile self-assembly, wherein the two-dimensional structure comprises a planar honeycomb structure and a triangular structure; the DNAntile is a branched DNA molecule basic unit with sticky ends, a four-arm cross structure is constructed by four single-stranded DNAs, and base sequences of the four sticky ends of each tile are complementary pairwise and are used for constructing periodic various graphs;
(3) combining the DNA tile with the DNA Origami to construct a two-dimensional and three-dimensional composite structure.
3. The method for fabricating nanoelectronic components using structured DNA as a template according to claim 1, wherein in step 1), the model of the structure of the nanodna includes, but is not limited to, a one-dimensional structure, a two-dimensional structure, and a three-dimensional structure.
4. The method for fabricating a nanoelectronic device using a structured DNA as a template according to claim 2, wherein in the step 1), the template size constructed by the DNA tile and the DNA Origami extends from 2nm to 1 dm.
5. The method for fabricating nanoelectronic components using structured DNA as a template according to claim 1, wherein in step 2), the surface treatment comprises coating, carbonization, ALD growth of metals, metal oxides, metal nitrides or element replacement.
6. The method for fabricating nano-electronic device using structural DNA as template according to claim 5, wherein the coating is performed by adding 1 XTAE/Mg to the prepared DNA nano-structural template2+Buffer solution, after taking 10 mul DNA solution and a certain amount of aniline to mix evenly, reacting for 1h at 25 ℃ to ensure that the DNA template is assembled with aniline as much as possible, and finally obtaining aniline-coated DNA Origami; the buffer is Tris-acetate acid,0.02 mM; EDTA,2 mM; mg (magnesium)2 +,12.5mM。
7. The method for fabricating nanoelectronic devices using structural DNA as a template according to claim 5, wherein the carbonization is performed by using Al2O3Protection of DNA Origami deposited on silicon wafers in H2Heating to 800-1000 ℃ in the atmosphere for 3-5min, and finally using H3PO4Al for cleaning surface2O3And carbonizing to obtain the carbonized DNA Origami used for obtaining the nano electronic component with the conductive property.
8. The method for fabricating a nano-electronic device using structural DNA as a template according to claim 5, wherein the specific method for growing metal, metal oxide and metal nitride by ALD is to adsorb the diluted DNA Origami or DNA tile on a silicon wafer cleaned by deionized water, ethanol, acetone and piranha solution; the silicon wafer is placed in an ALD reaction chamber, and the corresponding ALD cycle parameters are set: when depositing TiN molecular layers, TiCl is used4And NH3Setting the power of a radio frequency source as 100W, the pressure of a cavity as 100Pa and the pressure of a reaction chamber as 100Pa for the precursor, heating the cavity and the substrate to 380 ℃, and introducing the ALD precursor into the ALD working chamber in a pulse modeBody compound TiCl4Setting the pulse to 0.2s and introducing a pulse of inert purge gas such as high purity N into the ALD chamber2Removing excessive TiCl4Setting the purging time to be 2 s; pulsing NH into ALD chamber3Setting the pulse to 0.2 s; introducing N into ALD working chamber2Pulsing off excess NH3Setting the purging time to be 3 s; and repeating the steps, setting deposition cycle for 200 times, and estimating to obtain a TiN molecular layer with the thickness of 3-5 nm to obtain the nano electronic component which is prepared by taking structural DNA as a template and is subjected to atomic force deposition of metal, metal oxide and metal nitride.
9. The nano-electronic component prepared by the method for preparing the nano-electronic component by using the structural DNA as the template according to any one of claims 1 to 8.
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| CN108795939A (en) * | 2018-06-25 | 2018-11-13 | 上海纳米技术及应用国家工程研究中心有限公司 | Based on DNAzyme DNA paper folding surface aggregates method |
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2019
- 2019-11-27 CN CN201911185134.4A patent/CN110862065A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107055465A (en) * | 2016-11-10 | 2017-08-18 | 中国科学院上海应用物理研究所 | A kind of preparation method of the metal nano circuit pattern based on DNA nanostructure |
| CN108147364A (en) * | 2017-12-26 | 2018-06-12 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of DNA conductive films and products thereof and application |
| CN108795939A (en) * | 2018-06-25 | 2018-11-13 | 上海纳米技术及应用国家工程研究中心有限公司 | Based on DNAzyme DNA paper folding surface aggregates method |
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| FENG ZHOU等: "Programmably shaped carbon nanostructure from shape-conserving carbonization of DNA", 《ACS NANO》 * |
| ZHEN-GANG WANG等: "Self-assembled catalytic DNA nanostructures for synthesis of para-directed polyaniline", 《ACS NANO》 * |
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