CN110854163A - 一种显示面板及其制备方法 - Google Patents

一种显示面板及其制备方法 Download PDF

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CN110854163A
CN110854163A CN201911017025.1A CN201911017025A CN110854163A CN 110854163 A CN110854163 A CN 110854163A CN 201911017025 A CN201911017025 A CN 201911017025A CN 110854163 A CN110854163 A CN 110854163A
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周志伟
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/652,999 priority patent/US20210408075A1/en
Priority to PCT/CN2019/119286 priority patent/WO2021077507A1/zh
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    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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Abstract

本发明涉及一种显示面板及其制备方法，本发明利用导电聚合物可大面积成膜、便于进行图形化的优势；与金属相媲美的电导率；耐弯折性能；随着温度增加电导率不降低的特性；较强的电导方向等特性；采用导电聚合物材料替换所述显示面板中的走线的金属材料，以同时满足导电和耐弯折的使用需求。

Description

一种显示面板及其制备方法
技术领域
本发明涉及显示技术领域，具体涉及一种显示面板及其制备方法。
背景技术
OLED(英文全称：Organic Light-Emitting Diode,简称OLED)器件又称为有机电激光显示装置、有机发光半导体。OLED的基本结构是由一薄而透明具有半导体特性的铟锡氧化物(ITO)与电力之正极相连，再加上另一个金属面阴极，包成如三明治的结构。整个结构层中包括了:空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与面阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子(电子-空穴对)，而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
首先OLED的特性是自己发光，不像薄膜晶体管液晶显示装置(英文全称：Thinfilm transistor-liquid crystal display，简称TFT-LCD)需要背光，因此可视度和亮度均高。其次OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代TFT-LCD，有望成为继LCD之后的下一代主流显示技术。
随着各大面板厂不断加大对柔性显示的开发力度，未来具有多折叠功能的电子产品似乎正呼之欲出。实际上，以OLED为代表的具有可折叠功能的显示屏开发遇到了很多技术障碍，其中一个重要难点就是OLED各个膜层与线路既要满足具备优异的耐弯折性能不出现裂纹，又要保证具备良好的导电能力(金属走线)、绝缘性能(无机膜层)以及水氧阻隔性能(无机膜层)。然而，当前OLED中使用的金属走线主要包括以高弹性模量的钼(Mo)、钛(Ti)、铝(Al)，尽管金属相比于无机膜层更具耐弯折能力，但是随着弯折半径的不断减小以及产品弯折次数的不断增加，使得当前使用的金属材料难以满足越来越严苛的要求，当前技术条件下，金属走线在弯折后极易出现裂纹。因此，需要寻求一种新型材料替代金属走线材料以同时满足导电与耐极限弯折的使用要求。
发明内容
本发明的一个目的是提供一种显示面板及其制备方法，其能够替代现有的金属走线材料以同时满足导电与耐极限弯折的使用要求。
为了解决上述问题，本发明的一个实施方式提供了一种显示面板，其中包括：基底层和导电层。其中所述导电层设置于所述基底层上；所述导电层为导电聚合物薄膜。
进一步的，其中所述导电聚合物薄膜包括：导电聚吡咯薄膜、导电聚苯胺薄膜、导电聚噻吩薄膜和杂环类导电聚合物薄膜中的一种。
进一步的，其中所述导电层包括栅极层、源漏极层中的一种或多种。
进一步的，其中所述显示面板还包括：有源层、栅极绝缘层、层间绝缘层。其中所述有源层设置于所述基底层上；所述栅极绝缘层设置于所述有源层上；其中所述栅极层设置于所述栅极绝缘层上；所述层间绝缘层设置于所述栅极层上；其中所述源漏极层设置于所述层间绝缘层上；所述源漏极层通过过孔连接于所述有源层上。
本发明的另一个实施方式还提供了一种本发明所涉及的显示面板的制备方法，其中包括以下步骤：步骤S1，制备基底层；步骤S2，在所述基底层上涂布碱式聚合物溶液形成碱式聚合物薄膜，将该薄膜经过烘干处理后形成导电聚合物薄膜，最终形成导电层。
进一步的，其中所述步骤S2中的碱式聚合物溶液包括：碱式聚吡咯溶液、碱式聚苯胺溶液、碱式聚噻吩溶液和杂环类碱式聚合物溶液中的一种。
进一步的，其中所述步骤S2中的碱式聚苯胺溶液通过将氧化剂加入到盐酸溶液中进行苯胺单体氧化聚合得到盐酸掺杂的导电聚苯胺粉末，然后将得到的盐酸掺杂的导电聚苯胺粉末经过氨水脱掺杂得到碱式聚苯胺粉末，将碱式聚苯胺粉末溶于第一溶液制备形成。
进一步的，其中所述氧化剂包括三氯化铁、过硫酸铵中的一种。
进一步的，其中所述第一溶液为N-甲基吡咯烷酮。
进一步的，其中所述步骤S2中的导电聚合物薄膜通过湿法刻蚀的方式得到图形化的栅极层、源漏极层中的一种或多种。
本发明的优点是：本发明涉及一种显示面板及其制备方法，本发明利用导电聚合物可大面积成膜、便于进行图形化的优势；与金属相媲美的电导率；耐弯折性能；随着温度增加电导率不降低的特性；较强的电导方向等特性；采用导电聚合物材料替换所述显示面板中的走线的金属材料，以同时满足导电和耐弯折的使用需求。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明显示面板的结构示意图。
图2是本发明显示面板的制备步骤图。
图中部件标识如下：
100、显示面板
1、基底层 2、有源层
3、第一栅极绝缘层 4、第一栅极层
5、第二栅极绝缘层 6、第二栅极层
7、层间绝缘层 8、源漏极层
9、平坦层 10、阳极
11、像素定义层
具体实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示，一种显示面板100，其中包括：基底层1和导电层，其中所述导电层为导电聚合物薄膜；所述导电层可以是第一栅极层4、第二栅极层6或者源漏极层8中的一中或多种。
所述显示面板100还包括：有源层2、第一栅极绝缘层3、第二栅极绝缘层5、层间绝缘层7、平坦层9、阳极10以及像素定义层11。其中所述有源层2设置于所述基底层1上；所述第一栅极绝缘层3设置于所述有源层2上；所述第一栅极层4设置于所述第一栅极绝缘层3上；所述第二栅极绝缘层5设置于所述第一栅极层4上；所述第二栅极层6设置于所述第二栅极绝缘层5上；所述层间绝缘层7设置于所述第二栅极层6上；所述源漏极层8设置于所述层间绝缘层7上，所述源漏极层7通过第一过孔连接于所述有源层2上；所述平坦层9设置于所述源漏极层8上；所述阳极10间隔设置于所述平坦层9上；所述阳极10通过第二过孔连接于所述源漏极层8上；所述像素定义层11设置于相邻所述阳极10之间的所述平坦层9上；其中所述第一栅极层4、第二栅极层6、源漏极层8中的至少一个为导电聚合物薄膜。
其中所述导电聚合物薄膜包括：导电聚吡咯薄膜、导电聚苯胺薄膜、导电聚噻吩薄膜和杂环类导电聚合物薄膜中的一种。由此制成的第一栅极层4、第二栅极层6、源漏极层8同时具备导电和耐弯折的性能，避免显示面板100经受弯折后出现线路断裂、亮线、暗线等现象，提高了所述显示面板100的使用寿命，降低了生产成本。
如图2所示，本发明还提供了一种制备本发明所涉及的显示面板100的制备方法，其中包括以下步骤：步骤S1，制备基底层1；步骤S2，在所述基底层1上制备所述有源层2；步骤S3，在所述有源层2上制备所述第一栅极绝缘层3，在所述第一栅极绝缘3层上设置所述第一栅极层4；步骤S4，在所述第一栅极层4上制备所述第二栅极绝缘层5，在所述第二栅极绝缘层5上制备第二栅极层6；步骤S5，在所述第二栅极层6上制备所述层间绝缘层7；步骤S6，在所述层间绝缘层7上制备所述源漏极层8，并且将所述源漏极层8通过第一过孔连接于所述有源层2上；步骤S7，在所述源漏极层8上制备所述平坦层9；步骤S8，在所述平坦层9上间隔制备所述阳极10；步骤S9，在相邻所述阳极10之间的所述平坦层9上制备所述像素定义层11。
其中所述步骤S3中，通过在所述第一栅极绝缘层3上涂布碱式聚合物溶液形成碱式聚合物薄膜，然后将该薄膜经过烘干处理后形成导电聚合物薄膜，最后通过湿法刻蚀的方式得到图形化的第一栅极层4。
其中所述步骤S4中，通过在所述第二栅极绝缘层5上涂布碱式聚合物溶液形成碱式聚合物薄膜，然后将该薄膜经过烘干处理后形成导电聚合物薄膜，最后通过湿法刻蚀的方式得到图形化的第二栅极层6。
其中所述步骤S6中，通过在所述层间绝缘层7上涂布碱式聚合物溶液形成碱式聚合物薄膜，然后将该薄膜经过烘干处理后形成导电聚合物薄膜，最后通过湿法刻蚀的方式得到图形化的源漏极层8。
具体的，上述碱式聚合物溶液包括：碱式聚吡咯溶液、碱式聚苯胺溶液、碱式聚噻吩溶液和杂环类碱式聚合物溶液中的一种。
具体的，其中所述碱式聚苯胺溶液通过将氧化剂加入到盐酸溶液中进行苯胺单体氧化聚合得到盐酸掺杂的导电聚苯胺粉末，然后将得到的盐酸掺杂的导电聚苯胺粉末经过氨水脱掺杂得到碱式聚苯胺粉末，将碱式聚苯胺粉末溶于第一溶液制备形成。
其中所述氧化剂包括三氯化铁、过硫酸铵中的一种。其中所述第一溶液为N-甲基吡咯烷酮(NMP)。
通过采用聚苯胺等导电聚合物制备形成显示面板100的导电层，既能满足导电的需求，又能利用导电聚合物的耐弯折性能，避免弯折时出现线路断裂、亮线、暗线等现象，提高了所述显示面板100的使用寿命，降低了生产成本。
以上对本发明所提供的显示面板100及其制备方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种显示面板，其特征在于，包括：
基底层；
导电层，所述导电层设置于所述基底层上；
其中所述导电层为导电聚合物薄膜。
2.根据权利要求1所述的显示面板，其特征在于，所述导电聚合物薄膜包括：导电聚吡咯薄膜、导电聚苯胺薄膜、导电聚噻吩薄膜和杂环类导电聚合物薄膜中的一种。
3.根据权利要求1所述的显示面板，其特征在于，所述导电层包括栅极层、源漏极层中的一种或多种。
4.根据权利要求3所述的显示面板，其特征在于，还包括：
有源层，所述有源层设置于所述基底层上；
栅极绝缘层，所述栅极绝缘层设置于所述有源层上；
其中所述栅极层设置于所述栅极绝缘层上；
层间绝缘层，所述层间绝缘层设置于所述栅极层上；
其中所述源漏极层设置于所述层间绝缘层上；
所述源漏极层通过过孔连接于所述有源层上。
5.一种制备权利要求1所述的显示面板的制备方法，其特征在于，包括以下步骤：
步骤S1，制备基底层；
步骤S2，在所述基底层上涂布碱式聚合物溶液形成碱式聚合物薄膜，将该薄膜经过烘干处理后形成导电聚合物薄膜，最终形成导电层。
6.根据权利要求5所述的显示面板的制备方法，其特征在于，所述步骤S2中的碱式聚合物溶液包括：碱式聚吡咯溶液、碱式聚苯胺溶液、碱式聚噻吩溶液和杂环类碱式聚合物溶液中的一种。
7.根据权利要求6所述的显示面板的制备方法，其特征在于，所述步骤S2中的碱式聚苯胺溶液通过将氧化剂加入到盐酸溶液中进行苯胺单体氧化聚合得到盐酸掺杂的导电聚苯胺粉末，然后将得到的盐酸掺杂的导电聚苯胺粉末经过氨水脱掺杂得到碱式聚苯胺粉末，将碱式聚苯胺粉末溶于第一溶液制备形成。
8.根据权利要求7所述的显示面板的制备方法，其特征在于，所述氧化剂包括三氯化铁、过硫酸铵中的一种。
9.根据权利要求7所述的显示面板的制备方法，其特征在于，所述第一溶液为N-甲基吡咯烷酮。
10.根据权利要求5所述的显示面板的制备方法，其特征在于，所述步骤S2中的导电聚合物薄膜通过湿法刻蚀的方式得到图形化的栅极层、源漏极层中的一种或多种。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202061A (en) * 1989-05-26 1993-04-13 International Business Machines Corporation Electrically conductive polymeric materials and uses thereof
CN1170321A (zh) * 1996-05-28 1998-01-14 日本电气株式会社 选择呼叫无线电接收装置
CN1240537A (zh) * 1996-11-12 2000-01-05 国际商业机器公司 导电聚合物图形及其作为电极或电接触的应用
CN1972999A (zh) * 2004-03-31 2007-05-30 E.I.内穆尔杜邦公司 包含电掺杂的导电性聚合物和形成胶体的聚合酸的非水性分散体
CN103275343A (zh) * 2013-05-21 2013-09-04 山东大学 聚苯胺表面修饰的导电聚酯片的制备方法
CN105185835A (zh) * 2015-07-30 2015-12-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202061A (en) * 1989-05-26 1993-04-13 International Business Machines Corporation Electrically conductive polymeric materials and uses thereof
CN1170321A (zh) * 1996-05-28 1998-01-14 日本电气株式会社 选择呼叫无线电接收装置
CN1240537A (zh) * 1996-11-12 2000-01-05 国际商业机器公司 导电聚合物图形及其作为电极或电接触的应用
CN1972999A (zh) * 2004-03-31 2007-05-30 E.I.内穆尔杜邦公司 包含电掺杂的导电性聚合物和形成胶体的聚合酸的非水性分散体
CN103275343A (zh) * 2013-05-21 2013-09-04 山东大学 聚苯胺表面修饰的导电聚酯片的制备方法
CN105185835A (zh) * 2015-07-30 2015-12-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置

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