CN110854026A - Manufacturing method for simultaneously preparing multiple gold-tin solders on ceramic heat sink in 5G optical module - Google Patents
Manufacturing method for simultaneously preparing multiple gold-tin solders on ceramic heat sink in 5G optical module Download PDFInfo
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- CN110854026A CN110854026A CN201911187648.3A CN201911187648A CN110854026A CN 110854026 A CN110854026 A CN 110854026A CN 201911187648 A CN201911187648 A CN 201911187648A CN 110854026 A CN110854026 A CN 110854026A
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- Prior art keywords
- gold
- tin
- layer
- packaging
- heat sink
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- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 239000000919 ceramic Substances 0.000 title claims abstract description 30
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 30
- 230000003287 optical effect Effects 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010931 gold Substances 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims abstract description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 15
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000007738 vacuum evaporation Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 230000037452 priming Effects 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 20
- 229910001128 Sn alloy Inorganic materials 0.000 abstract description 11
- 238000003466 welding Methods 0.000 abstract description 11
- 230000008018 melting Effects 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 239000006023 eutectic alloy Substances 0.000 abstract description 6
- 230000005496 eutectics Effects 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000012858 packaging process Methods 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
Abstract
The invention relates to a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module, wherein the gold-tin solders prepared by the manufacturing method have controllable thicknesses of a gold layer and a tin layer, have good wettability after gold-tin eutectic, and meet different packaging requirements; the melting point of the formed eutectic alloy is 280 +/-0.2 ℃, the melting state can be maintained for 5min, 4-6 chips can be sequentially welded on one ceramic heat sink at one time, and the eutectic alloy has good welding performance and oxidation resistance. The gold-tin alloy has good wettability, weldability and corrosion resistance, and high stability, and can be used for simultaneously welding a plurality of chips, and the packaging effect of the plurality of chips can meet the packaging requirement. The gold-tin alloy solder can be preset on a thin film circuit, improves the packaging accuracy and yield, and meets the welding requirements of small chips. The gold-tin alloy solder pattern is obtained by photoetching, the pattern size and position accuracy are high, the chip position identification accuracy is high in the packaging process, and the packaging effect is good.
Description
Technical Field
The invention relates to the field of miniature ceramic products, in particular to a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module.
Background
The gold-tin alloy solder has low melting point, no corrosion action on a gold-plated layer of a microelectronic device, high joint strength, excellent corrosion resistance, high thermal conductivity and thermal shock resistance, and is a universal brazing material for various high-reliability electronic devices. The gold-tin alloy solder currently used for packaging can only package one chip. At present, the gold-tin welding on the ceramic heat sink is to weld the chips on the ceramic heat sink in a one-time packaging manner through heat treatment after the gold-tin is preset, and each heat sink can only package one chip and cannot meet the requirement that a plurality of chips are sequentially welded in a short time. Therefore, a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module, which has controllable thicknesses of a gold layer and a tin layer and good wettability after gold-tin eutectic, and can meet different packaging requirements, is needed.
Disclosure of Invention
The invention aims to provide a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module, which has the advantages of controllable thickness of a gold layer and a tin layer, good wettability after gold-tin eutectic crystallization and capability of meeting different packaging requirements.
In order to realize the technical purpose, the technical scheme of the invention is as follows: the invention relates to a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module, which comprises the following steps:
s1, plating a metal layer on the ceramic substrate by vacuum evaporation, wherein the metal layer is provided with a graphic layer, thereby forming a thin film circuit on the ceramic substrate;
s2, processing the metal layer by using a photoetching technology to obtain a gold-tin layer pattern to be reserved;
s3: evaporating and plating a bottom layer on the patterned metal layer;
s4: and (4) evaporating a gold layer and a tin layer on the priming layer to obtain the gold-tin solder.
The preparation method has the beneficial effects that the gold-tin solder prepared by the preparation method has controllable gold layer and tin layer thickness, good wettability after gold-tin eutectic, and can meet different packaging requirements; the melting point of the formed eutectic alloy is 280 +/-0.2 ℃, the melting state can be maintained for 5min, 4-6 chips can be sequentially welded on one ceramic heat sink at one time, and the eutectic alloy has good welding performance and oxidation resistance. The gold-tin alloy has good wettability, weldability and corrosion resistance, and high stability, can be used for simultaneously welding a plurality of chips, and the packaging effect of the plurality of chips can meet the packaging requirement. The gold-tin alloy solder can be preset on a thin film circuit, improves the packaging accuracy and yield, and meets the welding requirements of small chips. The gold-tin alloy solder pattern is obtained by photoetching, the pattern size and position accuracy are high, the chip position identification accuracy is high in the packaging process, and the packaging effect is good.
Further, the step S2 further includes the following steps:
a1, firstly, processing by using a photoetching technology to obtain a gold-tin layer pattern to be reserved;
a2, shading the working area which does not need to be reserved.
In actual operation, the flatness of the whole assembled body is close to the front surface through a side surface grinding and polishing process, and then the side surface glue spreading is used for photoetching a pattern by using a soft plate.
Further, the step S3 includes the following steps:
b1, sequentially plating Au layers and Sn layers by vacuum evaporation, wherein the An layer and the Sn layer are co-plated to 5 um;
and B2, removing the photoresist after the plating is finished to obtain 3 preset gold-tin plates.
Further, the step S4 further includes the following steps:
c1, evaporating a 300nm-500nm gold layer;
c2, evaporating a 300nm-500nm tin layer after the gold layer is plated;
c3, continuously plating the C1 and C2 steps until the total thickness of 3-5um is reached by sequentially and alternately evaporating.
In actual operation, because the problem of batch cutting can be caused after the metallization of the side surface is finished, the ceramic rod after splicing is placed on a ceramic sheet with uniform wax for solidification by utilizing the characteristics that the wax is solidified after being cooled at high temperature and is easy to melt in NMP solution, and the cutting quality is ensured by directly cutting once again.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method for simultaneously preparing a plurality of Au-Sn solders on a ceramic heat sink in a 5G optical module according to the present invention;
FIG. 2 is a thin film circuit diagram of a method for simultaneously preparing a plurality of Au-Sn solders on a ceramic heat sink in a 5G optical module according to the present invention;
fig. 3 is a gold-tin diagram of a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module according to the present invention.
The corresponding part names indicated by the numbers in the figures:
1. a thin film circuit; 2. gold tin;
Detailed Description
The present invention will be further described in detail with reference to the following specific examples:
the invention aims to provide a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module, which has the advantages of controllable thickness of a gold layer and a tin layer, good wettability after gold-tin eutectic crystallization and capability of meeting different packaging requirements.
As shown in fig. 1, 2 and 3, to achieve the technical purpose, the technical solution of the present invention is: the invention relates to a manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module, which comprises the following steps:
s1, plating a metal layer on the ceramic substrate by vacuum evaporation, wherein the metal layer is provided with a graphic layer, thereby forming a thin film circuit on the ceramic substrate;
s2, processing the metal layer by using a photoetching technology to obtain a gold-tin layer pattern to be reserved;
s3: evaporating and plating a bottom layer on the patterned metal layer;
s4: and (4) evaporating a gold layer and a tin layer on the priming layer to obtain the gold-tin solder.
The preparation method has the beneficial effects that the gold-tin solder prepared by the preparation method has controllable gold layer and tin layer thickness, good wettability after gold-tin eutectic, and can meet different packaging requirements; the melting point of the formed eutectic alloy is 280 +/-0.2 ℃, the melting state can be maintained for 5min, 4-6 chips can be sequentially welded on one ceramic heat sink at one time, and the eutectic alloy has good welding performance and oxidation resistance. The gold-tin alloy has good wettability, weldability and corrosion resistance, and high stability, can be used for simultaneously welding a plurality of chips, and the packaging effect of the plurality of chips can meet the packaging requirement. The gold-tin alloy solder can be preset on a thin film circuit, improves the packaging accuracy and yield, and meets the welding requirements of small chips. The gold-tin alloy solder pattern is obtained by photoetching, the pattern size and position accuracy are high, the chip position identification accuracy is high in the packaging process, and the packaging effect is good.
Further, the step S2 further includes the following steps:
a1, firstly, processing by using a photoetching technology to obtain a gold-tin layer pattern to be reserved;
a2, shading the working area which does not need to be reserved.
In actual operation, the flatness of the whole assembled body is close to the front surface through a side surface grinding and polishing process, and then the side surface glue spreading is used for photoetching a pattern by using a soft plate.
Further, the step S3 includes the following steps:
b1, sequentially plating Au layers and Sn layers by vacuum evaporation, wherein the An layer and the Sn layer are co-plated to 5 um;
and B2, removing the photoresist after the plating is finished to obtain 3 preset gold-tin plates.
Further, the step S4 further includes the following steps:
c1, evaporating a 300nm-500nm gold layer;
c2, evaporating a 300nm-500nm tin layer after the gold layer is plated;
c3, continuously plating the C1 and C2 steps until the total thickness of 3-5um is reached by sequentially and alternately evaporating.
In actual operation, because the problem of batch cutting can be caused after the metallization of the side surface is finished, the ceramic rod after splicing is placed on a ceramic sheet with uniform wax for solidification by utilizing the characteristics that the wax is solidified after being cooled at high temperature and is easy to melt in NMP solution, and the cutting quality is ensured by directly cutting once again.
In actual operation, a layer of metallization is firstly made on a2 inch x 0.635 substrate, the metallization is patterned and can be called as a thin film circuit, the position where gold and tin are to be prepared is reserved through a photoetching technology after the thin film circuit is obtained, the rest positions are shielded, Au and Sn are plated through vacuum evaporation, An layer and the Sn layer are co-plated for 5um, then photoresist is removed, 3 preset gold and tin solders are obtained, and the gold and tin solders are selectively prepared on the ceramic thin film circuit as shown in the figure. The selective preparation is to plate preset gold-tin on a designated area on the surface of a thin film circuit, namely metallization, instead of preset gold-tin solder plated on the whole surface. When in welding, the chip is sequentially placed at 1-3 gold-tin positions, one is welded each time, and the other is welded after one is welded.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (4)
1. A manufacturing method for simultaneously preparing a plurality of gold-tin solders on a ceramic heat sink in a 5G optical module is characterized by comprising the following steps:
s1, plating a metal layer on the ceramic substrate by vacuum evaporation, wherein the metal layer is provided with a graphic layer, thereby forming a thin film circuit on the ceramic substrate;
s2, processing the metal layer by using a photoetching technology to obtain a gold-tin layer pattern to be reserved;
s3: evaporating and plating a bottom layer on the patterned metal layer;
s4: and (4) evaporating a gold layer and a tin layer on the priming layer to obtain the gold-tin solder.
2. The method as claimed in claim 1, wherein the step S2 further comprises the steps of:
a1, firstly, processing by using a photoetching technology to obtain a gold-tin layer pattern to be reserved;
a2, shading the working area which does not need to be reserved.
3. The method as claimed in claim 1, wherein the step of S3 further comprises the following steps:
b1, sequentially plating Au layers and Sn layers by vacuum evaporation, wherein the An layer and the Sn layer are co-plated to 5 um;
and B2, removing the photoresist after the plating is finished to obtain 3 preset gold-tin plates.
4. The method as claimed in claim 1, wherein the step S4 further comprises the following steps:
c1, evaporating a 300nm-500nm gold layer;
c2, evaporating a 300nm-500nm tin layer after the gold layer is plated;
c3, continuously plating the C1 and C2 steps until the total thickness of 3-5um is reached by sequentially and alternately evaporating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911187648.3A CN110854026A (en) | 2019-11-28 | 2019-11-28 | Manufacturing method for simultaneously preparing multiple gold-tin solders on ceramic heat sink in 5G optical module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911187648.3A CN110854026A (en) | 2019-11-28 | 2019-11-28 | Manufacturing method for simultaneously preparing multiple gold-tin solders on ceramic heat sink in 5G optical module |
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| Publication Number | Publication Date |
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| CN110854026A true CN110854026A (en) | 2020-02-28 |
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| CN201911187648.3A Pending CN110854026A (en) | 2019-11-28 | 2019-11-28 | Manufacturing method for simultaneously preparing multiple gold-tin solders on ceramic heat sink in 5G optical module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779501A (en) * | 2020-12-26 | 2021-05-11 | 广东工业大学 | Gold-tin alloy heat sink film, preparation method thereof, heat sink substrate and LED device |
| CN116403912A (en) * | 2023-03-06 | 2023-07-07 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227161A (en) * | 2013-05-15 | 2013-07-31 | 中国电子科技集团公司第四十三研究所 | Welding substrate for electronic product and manufacturing method of welding substrate |
| CN110476259A (en) * | 2017-03-24 | 2019-11-19 | 欧司朗光电半导体有限公司 | For manufacturing the method and opto-electronic device of opto-electronic device |
-
2019
- 2019-11-28 CN CN201911187648.3A patent/CN110854026A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227161A (en) * | 2013-05-15 | 2013-07-31 | 中国电子科技集团公司第四十三研究所 | Welding substrate for electronic product and manufacturing method of welding substrate |
| CN110476259A (en) * | 2017-03-24 | 2019-11-19 | 欧司朗光电半导体有限公司 | For manufacturing the method and opto-electronic device of opto-electronic device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779501A (en) * | 2020-12-26 | 2021-05-11 | 广东工业大学 | Gold-tin alloy heat sink film, preparation method thereof, heat sink substrate and LED device |
| CN116403912A (en) * | 2023-03-06 | 2023-07-07 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
| CN116403912B (en) * | 2023-03-06 | 2023-11-28 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
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Application publication date: 20200228 |