CN110846626A - Carbon-doped phase-change storage material target and preparation method thereof - Google Patents
Carbon-doped phase-change storage material target and preparation method thereof Download PDFInfo
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- CN110846626A CN110846626A CN201911079293.6A CN201911079293A CN110846626A CN 110846626 A CN110846626 A CN 110846626A CN 201911079293 A CN201911079293 A CN 201911079293A CN 110846626 A CN110846626 A CN 110846626A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
Abstract
The application provides a carbon-doped phase-change storage material target and a preparation method thereof, wherein the preparation method of the target comprises the following steps: obtaining a phase-change raw material; mixing phase-change raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound; preparing a phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method; uniformly mixing the phase-change material powder with graphene to prepare a second mixture; and preparing the target material from the second mixture by a vacuum hot-pressing sintering process. Therefore, the target material prepared by the preparation method provided by the application has the advantages of uniform components, smooth surface, small roughness and low oxygen content.
Description
Technical Field
The application relates to the technical field of micro-nano electronics, in particular to a carbon-doped phase change storage material target and a preparation method thereof.
Background
Phase Change Memory (PCM) has the advantages of non-volatility, good micro-performance, compatibility with Complementary Metal Oxide Semiconductor (CMOS) process, long cycle life, high-speed reading, multi-level storage, radiation resistance and the like, and is considered to be the next-generation non-volatile storage technology with the most potential. The principle of PCM is to utilize the large difference in resistivity before and after phase change of a material to achieve data storage. In a PCM, the resistivity of one state (i.e., crystalline) is low and the resistivity of the other state (i.e., amorphous) is high. A logic "1" or a logic "0" depends on the resistance state the phase change material is in. Because the performance of PCM is between that of conventional Memory and flash Memory, and combines the advantages of both chips, it is known in the art as Storage Class Memory (SCM). The advantages enable the PCM to have wide application prospect in the fields of new generation data centers, high-end servers, artificial intelligence chips, logic-memory integrated SOC and the like.
In PCM, the phase change material as a storage medium and its preparation process are critical to the performance of PCM devices. On one hand, PCM needs to withstand the back-end-of-line (BEOL) high-temperature process during the preparation process, and puts a very high requirement on the thermal stability of the phase-change material. On the other hand, Physical sputtering (PVD) is currently used in industrial production, and the quality of the phase-change material film and the PCM product yield are closely related to the quality of the phase-change material target.
The carbon-doped phase-change material has the characteristic of good thermal stability and is applied to PCM preparation, but the conventional carbon-doped phase-change material target has the problems of uneven micro-area component structure, larger target particles and higher oxygen content. When the target material is adopted to prepare the phase-change material, the problems of poor film component uniformity, high oxygen content and large particles generated by sputtering can be caused, and the yield of the PCM chip is reduced.
Disclosure of Invention
The method solves the technical problems that the micro-area components of the phase change storage material target prepared in the prior art are of uneven structure, large target particles and high in oxygen content.
In order to solve the technical problem, the embodiment of the application discloses a preparation method of a carbon-doped phase change storage material target, which comprises the following steps:
obtaining a raw material of a phase-change material;
mixing phase-change raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound;
preparing a phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method;
uniformly mixing the phase-change material powder with graphene to prepare a second mixture;
and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.
Further, the phase change material compound is a sulfur compound, and the phase change material comprises germanium antimony tellurium alloy, germanium tellurium alloy, titanium antimony tellurium alloy or tantalum antimony tellurium alloy.
Further, the addition amount of the graphene is 4-25 mol%.
Further, the particle size of the phase-change material powder is 1-20 microns.
Further, the set temperature is 300-.
The application also provides a carbon-doped phase-change storage material target material, which is prepared by the preparation method;
the target material comprises a phase-change material compound and graphene.
Further, the particle size of the target material is 1 to 20 μm.
Further, the oxygen content of the target is less than 200 ppm.
Further, the content of the graphene is 4 mol% to 25 mol%.
Further, the phase change material compound is a sulfur compound, and the phase change material comprises germanium antimony tellurium alloy, germanium tellurium alloy, titanium antimony tellurium alloy or tantalum antimony tellurium alloy.
By adopting the technical scheme, the application has the following beneficial effects:
the carbon-doped phase change storage material target is formed by uniformly mixing and pressing superfine phase change material powder and graphene powder, and the target prepared by the preparation method provided by the application is uniform in component, smooth in surface, small in roughness and low in oxygen content. The carbon-doped phase-change material film prepared by the target material has uniform component distribution, can avoid particles introduced by sputtering, is beneficial to the improvement of the yield, and can effectively inhibit the segregation and migration of elements of the phase-change material in the crystal boundary of the phase-change material by the graphene, thereby improving the thermal stability and reliability of the phase-change material.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart illustrating a method for manufacturing a target material of a carbon-doped phase-change memory material according to an embodiment of the present disclosure;
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
Referring to fig. 1, fig. 1 is a method for preparing a target material of a carbon-doped phase-change memory material according to an embodiment of the present disclosure, including the following steps:
s1: obtaining a phase-change raw material;
s2: mixing phase-change raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound;
s3: preparing a phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method;
s4: uniformly mixing the phase-change material powder with graphene to prepare a second mixture;
s5: and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.
In the embodiment of the application, the phase-change material compound is a chalcogenide compound, and the phase-change material may be a germanium-antimony-tellurium alloy, an antimony-tellurium alloy, a germanium-tellurium alloy, a titanium-antimony-tellurium alloy, a tantalum-antimony-tellurium alloy, or other chalcogenide compounds.
In the embodiment of the application, the addition amount of the graphene is 4 mol% to 25 mol%.
In the embodiment of the application, the particle size of the phase-change material powder is 1-20 microns.
In the embodiment of the application, the set temperature is 300-.
The application also provides a carbon-doped phase-change storage material target material, which is prepared by the preparation method;
the target material comprises a phase-change material compound and graphene.
In the examples of the present application, the particle size of the target material is 1 to 20 μm.
In the embodiment of the application, the oxygen content of the target is lower than 200 ppm.
In the embodiment of the application, the content of the graphene is 4 mol% to 25 mol%.
In the embodiment of the application, the phase-change material compound is a chalcogenide compound, and the phase-change material may be any one of germanium-antimony-tellurium alloy, germanium-tellurium alloy, titanium-antimony-tellurium alloy, tantalum-antimony-tellurium alloy, or other chalcogenide compounds.
Based on the above, several embodiments are described below.
Example 1:
preparation of carbon-doped phase change storage material target material-C by using phase change material germanium antimony tellurium alloy (Ge-Sb-Te) and graphene0.18(Ge2Sb2Te5)0.82The method comprises the following steps:
s1: obtaining Ge2Sb2Te5High-purity raw materials of the phase-change material, namely Ge powder, Sb powder and Te powder;
s2: mixing Ge powder, Sb powder and Te powder according to a stoichiometric ratio to obtain a first mixture, heating the first mixture to 700 ℃ for reaction to generate a phase-change material compound Ge2Sb2Te5；
S3: phase change material compound Ge2Sb2Te5Preparing superfine phase change material powder by adopting a high-energy ball milling or jet milling method, wherein the size of powder particles is 10 microns;
s4: uniformly mixing phase-change material powder and graphene to prepare a second mixture, wherein the addition amount of the graphene is 18 mol%;
s5: and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.
Example 2:
the carbon-doped phase-change material target material-C is prepared by adopting phase-change material germanium tellurium alloy (Ge-Te) and graphene0.1(Ge2Sb2Te5)0.9The method comprises the following steps:
s1: obtaining high-purity raw materials Ge powder and Te powder of the GeTe phase-change material;
s2: mixing Ge powder and Te powder according to a stoichiometric ratio to obtain a first mixture, heating the first mixture to 800 ℃ and reacting to generate a phase-change material compound GeTe;
s3: preparing a phase change material compound GeTe into superfine phase change material powder by adopting a high-energy ball milling or jet milling method, wherein the size of powder particles is 10 microns;
s4: uniformly mixing phase-change material powder and graphene to prepare a second mixture, wherein the addition amount of the graphene is 10 mol%;
s5: and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.
Example 3:
the carbon-doped phase-change material target material-C is prepared by adopting phase-change material antimony tellurium alloy (Sb-Te) and graphene0.2(Sb2Te3)0.8The method comprises the following steps:
s1: obtaining Sb2Te3High-purity raw materials of Sb powder and Te powder of the phase-change material;
s2: mixing Sb powder and Te powder according to a stoichiometric ratio to obtain a first mixture, heating the first mixture to 600 ℃ to react to generate a phase-change material compound Sb2Te3；
S3: phase change material compound Sb2Te3Preparing superfine phase change material powder by adopting a high-energy ball milling or jet milling method, wherein the size of powder particles is 15 microns;
s4: uniformly mixing phase-change material powder and graphene to prepare a second mixture, wherein the addition amount of the graphene is 20 mol%;
s5: and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.
The other process conditions related in the application are conventional process conditions, the carbon-doped phase-change storage material target material provided by the application is formed by uniformly mixing and pressing ultrafine phase-change material powder and graphene powder, and the target material prepared by the preparation method provided by the application has the advantages of uniform components, smooth surface, small roughness and low oxygen content. The carbon-doped phase-change material film prepared by the target material has uniform component distribution, can avoid particles introduced by sputtering, is beneficial to the improvement of the yield, and can effectively inhibit the segregation and migration of elements of the phase-change material in the crystal boundary of the phase-change material by the graphene, thereby improving the thermal stability and reliability of the phase-change material.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
Claims (10)
1. A preparation method of a carbon-doped phase change storage material target is characterized by comprising the following steps:
obtaining a raw material of a phase-change material;
mixing the raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound;
preparing the phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method;
uniformly mixing the phase-change material powder with graphene to prepare a second mixture;
and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.
2. The method for preparing a carbon-doped phase-change storage material target according to claim 1, wherein the phase-change material compound is a chalcogenide compound, and the phase-change material compound comprises a germanium-antimony-tellurium alloy, an antimony-tellurium alloy, a germanium-tellurium alloy, a titanium-antimony-tellurium alloy or a tantalum-antimony-tellurium alloy.
3. The method for preparing the carbon-doped phase change memory material target according to claim 1, wherein the addition amount of the graphene is 4 mol% to 25 mol%.
4. The method for preparing a carbon-doped phase change memory material target according to claim 1, wherein the particle size of the phase change material powder is 1-20 μm.
5. The method as claimed in claim 1, wherein the predetermined temperature is 300-900 ℃.
6. A carbon-doped phase-change storage material target material, which is prepared by the preparation method of the carbon-doped phase-change storage material target material according to any one of claims 1 to 5;
the target comprises the components of a phase-change material compound and graphene.
7. The carbon-doped phase change memory material target according to claim 6, wherein the particle size of the target is 1-20 μm.
8. The carbon-doped phase-change memory material target as claimed in claim 6, wherein the oxygen content of the target is less than 200 ppm.
9. The carbon-doped phase change memory material target as claimed in claim 6, wherein the graphene content is 4 mol% to 25 mol%.
10. The carbon-doped phase-change storage material target as claimed in claim 6, wherein the phase-change material compound is a chalcogenide compound, and the phase-change material compound comprises a germanium-antimony-tellurium alloy, a germanium-tellurium alloy, a titanium-antimony-tellurium alloy or a tantalum-antimony-tellurium alloy.
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| CN101522940A (en) * | 2006-10-13 | 2009-09-02 | 日矿金属株式会社 | Sb-Te base alloy sinter sputtering target |
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| TW201202460A (en) * | 2010-04-26 | 2012-01-16 | Jx Nippon Mining & Amp Metals | Sb-te based alloy sintered compact sputtering target |
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| US20100197076A1 (en) * | 2006-09-27 | 2010-08-05 | Ha Yong-Ho | Methods for manufacturing a phase-change memory device |
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Application publication date: 20200228 |