CN110844877B - Method for manufacturing MEMS sensor - Google Patents
Method for manufacturing MEMS sensor Download PDFInfo
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- CN110844877B CN110844877B CN201910772912.3A CN201910772912A CN110844877B CN 110844877 B CN110844877 B CN 110844877B CN 201910772912 A CN201910772912 A CN 201910772912A CN 110844877 B CN110844877 B CN 110844877B
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- Prior art keywords
- layer assembly
- carrier
- carrier layer
- functional layer
- back side
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 54
- 239000002346 layers by function Substances 0.000 claims abstract description 34
- 239000011241 protective layer Substances 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000012876 topography Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 16
- 238000005530 etching Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004026 adhesive bonding Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002519 antifouling agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0096—For avoiding stiction when the device is in use, i.e. after manufacture has been completed
- B81C1/00976—Control methods for avoiding stiction, e.g. controlling the bias voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0019—Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
Abstract
The invention relates to a method for manufacturing a MEMS sensor, comprising the steps of: -providing a functional layer on the front side of the carrier layer assembly, -manufacturing trenches to expose the functional layer and the portion of the carrier layer assembly arranged below the functional layer partly on the side to achieve mechanical stress decoupling, -removing a portion of the back side of the carrier layer assembly, wherein a lateral carrier frame is formed, -structuring the surface of the remaining portion of the back side of the carrier layer assembly after said removal to drain and/or extrude the medium.
Description
Technical Field
The present invention relates to a method for manufacturing a MEMS sensor.
The invention also relates to a MEMS sensor.
Although the invention is generally applicable to any MEMS sensor, the invention is described based on a MEMS sensor having a diaphragm.
Background
It is known that sensors with diaphragms are manufactured in the following way: first, a grid of small access holes is applied to the back side of the substrate with the membrane by anisotropic etching, so-called "trench". Then, in a second process step, the so-called "islands" made of silicon as membrane carrier are exposed by isotropic etching by forming the back side of the cavity. Furthermore, the "islands" are also coupled to the substrate wafer only by lateral silicon springs (see for example US 9,643,837B1). Based on operability and workability requirements, wafers can thus be manufactured with a minimum thickness of about >300 μm. The vertical diameter of the backside exposure of the "islands" is limited to about <25 μm. The dielectric-resistant MEMS pressure sensor module can be realized by encapsulation of the MEMS chip with a suitable gel, the so-called "glue" (vergel). The minimum achievable wafer thickness of about 300 μm by the known method is insufficient for the requirements of sensor module height in many Consumer Electronic (CE) applications, especially "wearable" consumer electronic components. Thus, the MEMS wafer is first thinned from the back side in a known manner to the extent that so-called "back bonding" is achieved, so that cavities are stripped off the wafer surface. After lamination of the thin film adhesive onto the back side of the wafer and subsequent mechanical sawing of the wafer, stress-decoupled pressure sensor chips with a reduced thickness of about 150-200 μm are thus manufactured. The chip thus prepared is then bonded to a carrier substrate by a film adhesive. For the maintenance of the stress decoupling it is necessary that only the outer sensor frame is glued to the substrate, whereas the film adhesive does not adhere to the "islands", which means that no mechanical contact is established between the "islands" and the substrate.
Disclosure of Invention
In an embodiment, the present invention proposes a method for manufacturing a MEMS sensor, the method comprising the steps of:
a functional layer provided on the front side of the carrier layer assembly,
the trenches are made such that the portions of the functional layer and carrier layer assembly arranged underneath the functional layer are partly exposed at the sides for mechanical decoupling,
removing a portion of the back side of the carrier layer assembly, wherein a lateral carrier frame is formed,
-configuring the surface of the remaining part of the back side of the carrier layer assembly after said removal to drain and/or extrude the medium.
In a further embodiment, the invention provides a MEMS sensor comprising a carrier frame, a carrier layer assembly, a spring device for fastening the carrier layer assembly to the carrier frame, wherein a functional layer is arranged on the front side of the carrier layer assembly, wherein the carrier layer assembly is configured on its side facing away from the functional layer for discharging and/or extruding a medium.
The advantage achieved thereby is that the vertical distance of the exposed functional layer/carrier layer assembly and the carrier frame is thereby substantially arbitrarily adjusted and thus adhesion of the film adhesive on the rear side of the exposed functional layer/carrier layer assembly is prevented. Furthermore, a simple and simultaneously reliable bubble-free filling of the gel or oil or generally viscous medium in the respective region can be achieved. Another advantage is that the corresponding wafer for the MEMS sensor can be processed with a large thickness, in particular a thickness of more than 400 μm. Thereby avoiding problems in handling wafers, especially breakage of wafers. Furthermore, a smaller wafer thickness, in particular less than 100 μm, can be achieved.
Other features, advantages, and additional embodiments of the invention are described below or disclosed herein.
According to a further advantageous development, the surface is structured without surface topography (topographiefrei). The advantage of this is that, as a result, trapping of air bubbles on the functional layer/carrier layer assembly during, for example, gluing is avoided or reduced.
According to a further advantageous embodiment, the surface is configured convexly with respect to the functional layer. The advantage achieved thereby is that, for example, air bubbles or air bubble inclusions which occur during gluing can rise along the back side of the arch by means of an electrostatic lift and can be guided out of the glued volume by means of a lateral spring structure. Thus, sensor gluing without "voids" can be achieved.
According to a further advantageous development, the thickness of the carrier layer assembly is reduced by means of grinding and polishing. The thickness of the carrier layer assembly can thus be adjusted in a simple and reliable manner.
According to a further advantageous development, the protective layer is applied to the functional layer and/or to the remaining part of the back side of the carrier layer assembly before the trench is produced. By means of the protective layer, the functional layer can be protected on the one hand during etching of the trenches, and on the other hand, in the case of the protective layer being applied to the back side of the carrier layer assembly, it serves as an etch stop layer for the production of the trenches by means of etching and thus prevents the trenches from penetrating to the back side of the wafer.
According to a further advantageous development, the protective layer is applied to the remaining part of the back side of the carrier layer assembly by means of spraying. A particularly reliable and uniform covering of the rear side of the carrier layer assembly can thereby be achieved by the protective layer.
According to a further advantageous embodiment, a functional layer is provided with a movable membrane. In this way a MEMS pressure sensor may be provided.
According to a further advantageous development, a distance of at least 200 μm, in particular at least 250 μm, preferably at least 300 μm is established between the lower edge of the carrier frame and the remaining part of the back side of the carrier layer assembly. Particularly simple wafer processing can thereby be achieved.
According to a further advantageous development, the trench is produced from the front side. This enables a simple lateral exposure of the functional layer and of the part of the carrier layer assembly arranged below the functional layer.
According to a further advantageous development, the portions of the back side of the carrier layer assembly are removed by means of laterally different etching rates. In this way, a convex curvature of the rear side of the carrier layer assembly can be produced in a particularly simple manner, which simplifies, for example, the removal of air bubbles during subsequent filling with gel or oil.
Drawings
Other important features and advantages of the present invention are derived from the figures and the corresponding figure description with reference to the figures.
The features mentioned above and yet to be explained below can of course be used not only in the respectively described combination but also in further combinations or alone without departing from the framework of the invention.
Preferred embodiments and implementations of the present invention are illustrated in the accompanying drawings and described in detail in the following specification, wherein like reference numerals refer to identical or similar or functionally identical components or elements.
Here, in schematic form, shown in cross section:
FIG. 1 is a MEMS sensor according to an embodiment of the present invention;
FIG. 2 is a MEMS sensor during manufacture according to an embodiment of the invention;
FIG. 3 is a MEMS sensor according to FIG. 2 after at least one additional manufacturing step according to an embodiment of the invention; and
fig. 4 shows steps of a method according to an embodiment of the invention.
Detailed Description
Fig. 1 shows a MEMS sensor according to an embodiment of the invention in a schematic way and in a cross section.
In fig. 1, a MEMS sensor 1 is shown, which has a sensor frame 2. The functional layer 4 (hereinafter collectively referred to as island 34) on the carrier layer assembly 3 is suspended resiliently from the sensor frame 2 by spring means 5 in the form of silicon springs. The functional layer 4 is arranged here on the upper side 3a of the carrier layer assembly 3. The rear side 3b of the carrier layer assembly 3 is embodied in a convex manner with respect to the functional layer 4 and has a surface 3b' which is embodied without surface topography. The vertical extension of the sensor frame 2 is 400 μm in the embodiment of fig. 1, and the thickness 11 of the islands 34 comprising the functional layer 4 and the carrier layer assembly 3 is 80 μm.
Fig. 2 shows a MEMS sensor according to an embodiment of the invention during manufacture.
A part of the backside of the carrier layer assembly 3 has been removed in the MEMS sensor 1 according to fig. 2 to form the sensor frame 2. Likewise, the rear side 3b has been constructed convex with respect to the functional layer 4. A structured paint mask 6b is also arranged on the rear side of the sensor frame 2 and a protective paint layer 6a is arranged on the front side 3 a. The side exposure of islands 34 has not yet been performed.
Fig. 3 shows the MEMS sensor according to fig. 2 after at least one further manufacturing step according to an embodiment of the invention.
In fig. 3, the sensor 1 is shown after a protective lacquer layer 6c has been applied on the backside 3b of the islands 34. The trench 7 has then been etched from the front side 3a to expose the island 34 laterally. The protective lacquer layer 6c serves here as an etch stop for the applied, in particular etched, trenches 7 from the front side 3 a.
The protective layers 6a, 6b, 6c applied in fig. 2 and 3 may for example comprise a protective lacquer, which is applied by means of spin coating. To achieve the desired wafer thickness, the backside 3b and the underside of the sensor frame 2 can be removed by means of grinding and polishing. The rear side 3b and the front side 3a are correspondingly provided with a protective lacquer, for example by spray coating. The protective layer is then structured and prepared for etching. The respective protective layer 6a, 6b, 6c is removed again after etching. Here, the protective layer 6c on the backside 3b may remain applied when the cavity formed between the sensor frame 2 and the underside 3b of the carrier layer assembly 3 has an aspect ratio of more than 1:1. The sensor may then be applied and glued to the substrate by means of a film adhesive.
Fig. 4 shows steps of a method according to an embodiment of the invention.
Fig. 4 shows steps of a method for manufacturing a MEMS sensor.
In this case, in a first step S1, a functional layer is provided on the front side of the carrier layer assembly.
Furthermore, in a second step S2, trenches are produced in order to expose the functional layer and the part of the carrier layer assembly arranged underneath the functional layer on the side in part for mechanical stress decoupling.
The back side portion of the carrier layer assembly is then removed in a third step S3, wherein a lateral carrier frame is formed.
Furthermore, in a fourth step S4, the surface of the remaining part of the back side of the carrier layer assembly after the removal is structured for discharging and/or extruding the medium.
The gluing as described above is then carried out in a further step, which also carries out the filling of the oil, in order to form a medium-resistant MEMS sensor.
In summary, the invention has the following advantages:
avoiding adhesion of adhesive on the backside of the exposed islands.
Bubble-free filling of the medium can be achieved.
Simpler wafer handling.
Smaller chip thickness can be achieved.
A large wafer thickness can be achieved at the time of processing.
Although the present invention has been described with reference to the preferred embodiments, the present invention is not limited thereto but can be modified in various ways.
Claims (12)
1. Method for manufacturing a MEMS sensor (1), comprising the steps of:
providing (S1) a functional layer (4) on the front side (3 a) of the carrier layer assembly (3),
-producing (S2) trenches (7) such that the functional layer (4) and the part of the carrier layer assembly arranged underneath the functional layer (4) are partially exposed on the sides for mechanical stress decoupling,
-removing (S3) a portion of the back side (3 b) of the carrier layer assembly (3), wherein a lateral carrier frame (2) is formed,
-configuring (S4) a surface (3 b ') of the remaining portion of the back side (3 b) of the carrier layer assembly (3) after the removal to drain and/or extrude a medium, wherein the surface (3 b') is convexly configured with respect to the functional layer (4).
2. The method according to claim 1, wherein the surface (3 b') is structured free of surface topography.
3. Method according to claim 1 or 2, wherein the thickness of the carrier layer assembly (3) is reduced by means of grinding and polishing.
4. Method according to claim 1 or 2, wherein a protective layer (6 a, 6 b) is applied on the functional layer (4) and/or on the remaining part of the back side (3 b) of the carrier layer assembly (3) before the trench (7) is manufactured.
5. Method according to claim 4, wherein the protective layer (6 a, 6 b) is applied on the remaining part of the back side (3 b) of the carrier layer assembly (3) by means of spraying.
6. Method according to claim 1 or 2, wherein the functional layer (4) is provided with a movable membrane.
7. Method according to claim 1 or 2, wherein a distance of at least 200 micrometers is established between a lower edge of the carrier frame (2) and the remaining part of the back side (3 b) of the carrier layer assembly (3).
8. The method according to claim 7, wherein the distance between the lower edge of the carrier frame (2) and the remaining part of the back side (3 b) of the carrier layer assembly (3) is at least 250 micrometers.
9. The method according to claim 7, wherein the distance between the lower edge of the carrier frame (2) and the remaining part of the back side (3 b) of the carrier layer assembly (3) is at least 300 micrometers.
10. A method according to claim 1 or 2, wherein the trench (7) is manufactured from the front side (3 a).
11. Method according to claim 1 or 2, wherein the removal of the portion of the backside of the carrier layer assembly (3) is performed by means of laterally different etch rates.
Mems sensor (1), comprising:
a carrier frame (2),
a carrier layer assembly (3), wherein a functional layer (4) is arranged on a front side (3 a) of the carrier layer assembly (3),
spring means (5) for fastening the carrier layer assembly (3) to the carrier frame (2), wherein the carrier layer assembly (3) is formed on its rear side (3 b) facing away from the functional layer (4) for discharging and/or extruding a medium, wherein a surface (3 b') of the rear side (3 b) is formed convexly with respect to the functional layer (4).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102018214113.4 | 2018-08-21 | ||
| DE102018214113.4A DE102018214113B4 (en) | 2018-08-21 | 2018-08-21 | Method for manufacturing a MEMS sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110844877A CN110844877A (en) | 2020-02-28 |
| CN110844877B true CN110844877B (en) | 2024-02-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910772912.3A Active CN110844877B (en) | 2018-08-21 | 2019-08-21 | Method for manufacturing MEMS sensor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110844877B (en) |
| DE (1) | DE102018214113B4 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013209385A1 (en) * | 2013-05-22 | 2014-11-27 | Robert Bosch Gmbh | Micromechanical differential pressure sensor device, corresponding manufacturing method and differential pressure sensor arrangement |
| WO2015104086A1 (en) * | 2014-01-13 | 2015-07-16 | Robert Bosch Gmbh | Production method for a micromechanical part, and micromechanical part |
| US9643837B1 (en) * | 2016-01-29 | 2017-05-09 | Infineon Technologies Ag | Sensor device and method for making thereof |
| WO2017148715A1 (en) * | 2016-02-29 | 2017-09-08 | Robert Bosch Gmbh | Micromechanical sensor device and corresponding production method |
| DE102016219807A1 (en) * | 2016-10-12 | 2018-04-12 | Robert Bosch Gmbh | Micromechanical sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10060820B2 (en) * | 2015-12-22 | 2018-08-28 | Continental Automotive Systems, Inc. | Stress-isolated absolute pressure sensor |
| DE102017214558B9 (en) * | 2017-08-21 | 2021-02-25 | Infineon Technologies Ag | METHOD FOR GENERATING A MEMS SENSOR |
| DE102017220349B3 (en) * | 2017-11-15 | 2018-06-14 | Robert Bosch Gmbh | Micromechanical pressure sensor device and corresponding manufacturing method |
-
2018
- 2018-08-21 DE DE102018214113.4A patent/DE102018214113B4/en active Active
-
2019
- 2019-08-21 CN CN201910772912.3A patent/CN110844877B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013209385A1 (en) * | 2013-05-22 | 2014-11-27 | Robert Bosch Gmbh | Micromechanical differential pressure sensor device, corresponding manufacturing method and differential pressure sensor arrangement |
| WO2015104086A1 (en) * | 2014-01-13 | 2015-07-16 | Robert Bosch Gmbh | Production method for a micromechanical part, and micromechanical part |
| US9643837B1 (en) * | 2016-01-29 | 2017-05-09 | Infineon Technologies Ag | Sensor device and method for making thereof |
| WO2017148715A1 (en) * | 2016-02-29 | 2017-09-08 | Robert Bosch Gmbh | Micromechanical sensor device and corresponding production method |
| DE102016219807A1 (en) * | 2016-10-12 | 2018-04-12 | Robert Bosch Gmbh | Micromechanical sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102018214113A1 (en) | 2020-02-27 |
| DE102018214113B4 (en) | 2021-05-06 |
| CN110844877A (en) | 2020-02-28 |
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