CN110836800A - Method for carrying out two-dimensional visualization on effective silicon distribution of plant rhizosphere - Google Patents

Method for carrying out two-dimensional visualization on effective silicon distribution of plant rhizosphere Download PDF

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CN110836800A
CN110836800A CN201911178926.9A CN201911178926A CN110836800A CN 110836800 A CN110836800 A CN 110836800A CN 201911178926 A CN201911178926 A CN 201911178926A CN 110836800 A CN110836800 A CN 110836800A
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silicon
membrane
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film
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CN110836800B (en
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管冬兴
李刚
余光辉
朱永官
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Tianjin University
Institute of Urban Environment of CAS
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Tianjin University
Institute of Urban Environment of CAS
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    • GPHYSICS
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    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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    • G01N21/84Systems specially adapted for particular applications
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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Abstract

The invention discloses a method for performing two-dimensional visualization on effective silicon distribution of plant rhizosphere, and belongs to the technical field of environmental micro-interface chemical imaging research. The method specifically comprises the following steps: the method comprises the steps of sequentially contacting a track etching membrane, a polyether sulfone filter membrane and a PZ-DGT adsorption membrane with plant rhizosphere soil, taking out the polyether sulfone filter membrane and the PZ-DGT adsorption membrane after the plant rhizosphere soil is placed for a period of time, analyzing distribution characteristics of silicon accumulation on the PZ-DGT adsorption membrane, and realizing two-dimensional visualization of plant rhizosphere effectiveness silicon distribution through data processing. The method performs two-dimensional visualization on the effective silicon distribution of the plant rhizosphere, and realizes the resolution from micrometer to submillimeter.

Description

Method for carrying out two-dimensional visualization on effective silicon distribution of plant rhizosphere
Technical Field
The invention belongs to the technical field of environmental micro-interface chemical imaging research, and particularly relates to a method for performing two-dimensional visualization on effective silicon distribution of plant rhizosphere.
Background
The silicon element has beneficial effects on crop growth, development, yield and disease resistance, especially on rice and sugarcane of Gramineae and part of Cyperaceae plants. For plants of the family Poaceae and Cyperaceae, Si is an essential element, and for non-siliceous plants such as tomato, cucumber, etc., it is a beneficial element. Researches show that the silicon plays a significant role in improving the utilization rate of light energy, improving the yield and quality of crops, enhancing the stress resistance (lodging resistance, pest resistance and drought resistance) of the crops, regulating the absorption and utilization of nutrients and the like. According to the measurement, the quantity of the silicon element absorbed by soil in one growing season is about 75-135kg (calculated by silicon dioxide) per mu of high-yield rice, and the abundance and shortage of the silicon element in the soil are also noticed along with the intensive planting and the improvement of the crop yield and the leaching loss. Therefore, the method for determining the content of silicon in the soil to determine the application amount of the silicon fertilizer so as to reasonably apply the fertilizer is particularly important for agricultural production and sustainable utilization of soil silicon.
The effective silicon is in the form of silicon which can be directly absorbed by organisms such as plants, microorganisms and the like in natural water and soil. It is complicated to directly detect the content of effective silicon in water and soil by using plant bodies, and therefore, for soil, the academia generally uses the content of silicon extracted by weak acid or weak base as the content of effective silicon (chemical extraction method). However, different lixiviants have different capacities of extracting silicon elements, and the extracted silicon forms are different, so that the chemical extraction results are very different, and the capacity of plants for absorbing silicon cannot be well predicted.
Compared with a chemical extraction method, the concentration of phosphorus and metal measured by a gradient diffusion thin film (DGT) technology has better correlation with the concentration in a plant body, and can represent the effective concentration of the phosphorus and the metal. Therefore, the silicon concentration measured by DGT is expected to be more representative of the effective silicon concentration in soil, but no report on the aspect exists at present. DGT technology is taught by William Davison and Hao Zhang (Zhang Hao) university of Lankaster, 1994 (Davison, W., Zhang, H.,1994.In situ specification measures of trace components In natural waters using the same-filemels. Nature 367, 546-548.). The DGT technology is mainly composed of a diffusion layer (diffusion film) and an adsorption layer (adsorption film), and substances to be detected form a diffusion gradient in the diffusion layer and are captured and fixed by the adsorption layer. The adsorption material is selected according to the purpose of the experiment, and the adsorption layer with excellent adsorption performance is prepared. If the adsorption material is uniformly distributed on the adsorption layer and the particle size is small enough, the adsorption layer is expected to be used for high-spatial-resolution chemical imaging of the substance to be detected.
The areas of strong plant root-soil interaction are typically in the range of a few millimeters around the root system, and measuring the rhizospheric silicon distribution at micron to sub-millimeter resolution will greatly facilitate understanding of the process of silicon uptake by plants. Currently, the existing research is to simply divide the soil or sediment for plant growth into rhizosphere soil and non-rhizosphere soil, respectively sample and analyze the soil, and compare the difference between the silicon content in the rhizosphere soil and the non-rhizosphere soil and other indexes of the soil. The method can only obtain the information of a single point of the silicon content in the rhizosphere soil. Even if the research is carried out by collecting soil samples with different distances from roots for analysis, only one-dimensional distribution information of silicon in rhizosphere soil of millimeter to centimeter level can be obtained. Moreover, the existing method is a destructive analysis method, the state of the plant rhizosphere soil is disturbed in the sampling process, and the reliability of the result is to be further verified. The DGT technology with high spatial resolution is used for plant rhizosphere chemical imaging, and is expected to obtain effective silicon images with sub-millimeter spatial resolution under the non-destructive sampling condition. However, technical innovation is still needed to realize silicon imaging of plant rhizosphere effectiveness, and no report on the technical innovation exists at present.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provides a method for carrying out two-dimensional visualization on the effective silicon distribution of the plant rhizosphere.
The invention adopts the following technical scheme: a method for carrying out two-dimensional visualization on the effectiveness silicon distribution of plant rhizosphere comprises the following steps:
the method comprises the following steps: preparing a PZ-DGT adsorption film;
step two: cutting the PZ-DGT adsorption film into a rectangular strip shape or a square strip shape, sequentially contacting the PZ-DGT adsorption film, a polyether sulfone filter film and the PZ-DGT adsorption film with plant rhizosphere soil, taking out the PZ-DGT adsorption film after placing for a period of time, analyzing the distribution characteristics of silicon accumulation on the PZ-DGT adsorption film, and realizing two-dimensional visualization of plant rhizosphere effectiveness silicon distribution through data processing.
In some embodiments, the PZ-DGT adsorption film prepared in step one is a polyacrylamide hydrogel film with uniformly distributed zirconia particles having a particle size of 0.2 μm or less on the surface.
In some embodiments, the second step specifically includes the following steps:
a: assembling a plant incubator;
b: transferring the plant seedlings into a plant incubator, enabling the plant root system to be close to the track etching film, and inclining the plant incubator by 25-30 degrees;
c: placing a PZ-DGT adsorption film: in the plant growth stage to be inspected, a polyether sulfone filter membrane and a rectangular or square strip-shaped PZ-DGT adsorption membrane are sequentially placed on a track etching membrane in a plant rhizosphere area, the upper edge of the PZ-DGT adsorption membrane is in a horizontal state, a rhizosphere position corresponding to the upper left corner of the PZ-DGT adsorption membrane is marked as a coordinate origin (0, 0), and the polyether sulfone filter membrane and the PZ-DGT adsorption membrane are taken out after the PZ-DGT adsorption membrane is placed for a period of time;
d: dry glue treatment: placing the taken PZ-DGT adsorption membrane on a polyether sulfone filter membrane, pre-drying the adsorption membrane and the polyether sulfone filter membrane, and then drying the pre-dried adsorption membrane and the polyether sulfone filter membrane to ensure that the adsorption membrane is completely dried and is tightly attached to the polyether sulfone filter membrane;
e: analyzing by an instrument: analyzing silicon cumulant of different positions on the PZ-DGT adsorption film after dry glue treatment by using laser ablation-inductively coupled plasma mass spectrometry, namely29Si count value (cps), and synchronously acquiring13C count value (cps) is used to calibrate the silicon measurement results, and the silicon to carbon count value ratio (C/C) is calculated29Si/13C,cps/cps);
f: and (3) data visualization processing: sequentially overlapping and assembling the PZ-DGT adsorption membrane and the polyether sulfone filter membrane to form a DGT device, and exposing the DGT device toKnown concentration (C)sol) After 4 hours, the DGT apparatus was recovered from the fully stirred silicic acid solution, and the PZ-DGT adsorption film was taken out, and the cumulative flux of silicon on the adsorption film was represented as F, where F is CsolD/. DELTA.g; treating and analyzing the PZ-DGT adsorption film with known silicon cumulative flux according to the steps d and e to establish the ratio of the silicon cumulative flux (F) to the silicon-carbon count value (F)29Si:13C, cps/cps), and converting the accumulated flux of silicon on the PZ-DGT adsorption film in the step e, F; and (3) performing two-dimensional visual presentation on the silicon accumulated flux on the PZ-DGT adsorption film by using data processing software, setting a coordinate point at the upper left corner of the picture as an original point (0, 0) in the step c, gradually increasing coordinate values transversely rightward and longitudinally downward to respectively obtain a transverse distance and a longitudinal distance from a plant rhizosphere effectiveness silicon distribution point to the original point, and enabling the PZ-DGT adsorption film and the space information of the plant rhizosphere to be corresponding to obtain a plant rhizosphere effectiveness silicon distribution map.
In some embodiments, step a specifically includes: collecting wet soil, loading into U-shaped organic glass tank, attaching track etching film, fixing on the organic glass tank, standing the organic glass tank, opening the top, and adding appropriate amount of pure water into the soil.
In some embodiments, the track-etched membrane in step a is a polycarbonate membrane, and the pore diameter is 0.1-0.4 μm, the thickness is 6-11 μm.
In some embodiments, the rectangular strip-shaped or square strip-shaped PZ-DGT adsorption film in the step c has a length of 1-5 cm, a width of 0.5-5 cm and a thickness of 0.1-0.5 mm, and the temperature is controlled to be 20 +/-1 ℃ in the placement process; the pore diameter of the polyethersulfone filter membrane is 0.45 mu m, the thickness of the polyethersulfone filter membrane is 0.014cm, and the length and width value or the diameter of the polyethersulfone filter membrane is the same as that of the PZ-DGT adsorption membrane.
In some embodiments, the drying instrument in the step d performs drying treatment on the pre-dried adsorption membrane and the polyether sulfone filter membrane, the temperature of the drying instrument is 50-60 ℃, and the time for drying the gel is 6-12 hours.
In some of these embodiments, the silicic acid solution of step f has a known concentration C sol0 to 2.5mg L-1(ii) a D is the diffusion coefficient of silicic acid in the track etching film, namely 5.89 multiplied by 10-6cm2s-1At 20 ℃; the delta g is the thickness of the polyether sulfone filter membrane and is 0.014 cm; the PZ-DGT adsorption film is placed in a plant incubator for 4 hours. .
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts the PZ-DGT adsorption film and rhizosphere box technology to carry out two-dimensional visualization on the effective silicon distribution of the rhizosphere of the plant, can obtain an effective silicon image with submillimeter-level spatial resolution in situ, and identifies the hot area of the rhizosphere silicon. The method does not damage or disturb the original environment of the plant rhizosphere, and can better reflect the effectiveness of the silicon under the real environment condition.
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FIG. 1 is a scanning electron microscope image of an adsorption film of PZ-DGT;
FIG. 2 is a kinetic diagram of absorption of silicic acid by a PZ-DGT adsorption film;
FIG. 3 is a schematic view of a plant incubator in which a 1, U-shaped organic glass tank; 2. plant growing; 3. water; 4. soil or sediment; 5. plant root systems; 6. the coordinate values of the upper left corner of the polyethersulfone filter membrane and the PZ-DGT adsorption membrane are (0, 0), and the coordinate values of the upper left corner of the polyethersulfone filter membrane and the PZ-DGT adsorption membrane are gradually increased along the transverse direction to the right (x axis) and the longitudinal direction to the lower (y axis);
FIG. 4 is a side view of a plant incubator;
FIG. 5 is a portion of the curve box of FIG. 4; wherein 7, track etching the membrane; 8. an organic glass baffle;
FIG. 6 is a graph of silicon cumulative flux (F, ng cm)-2s-1) Ratio to silicon to carbon count value (29Si/13C, cps/cps);
FIG. 7 is a rice rhizosphere validity silicon distribution map.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be purely exemplary and are not intended to limit the scope of the invention, which is defined in the appended claims, as may be amended by those skilled in the art upon reading the present invention.
The present invention will be described in detail with reference to specific examples.
Example 1
A method for carrying out two-dimensional visualization on effective silicon distribution of plant rhizosphere comprises the following specific steps:
step one, preparation and performance test of a PZ-DGT adsorption film:
(1) preparing a glue making solution: the three solutions were mixed in a volume ratio of 15:47.5:37.5 to prepare a gelled solution using 2% strength crosslinking agent DGTgel cross-linker, purified water from Milli-Q water purification machines, and 40% strength by mass acrylamide solution from GE Healthcare.
(2) Adding 7/1000 tetramethyl diethylamine solution in volume of the glue making solution prepared in the step (1) and 1/400 ammonium persulfate solution with mass percentage concentration of 10% in volume of the glue making solution into the glue making solution respectively, and mixing uniformly to prepare a mixed solution.
(3) And (3) injecting the mixed solution prepared in the step (2) into a gap between two glass plates sandwiching a U-shaped plastic partition sheet with the thickness of 0.25mm at the speed of 5mL/min, completely removing air bubbles between the glass plates, and horizontally placing the glass plates in an oven at the temperature of 42 ℃ for 1h to completely gel and form a film.
(4) Prying off the glass plate, taking out the gel film, soaking in pure water for 12h, and replacing the pure water for 4 times during the soaking period to obtain the polyacrylamide hydrogel film with the thickness of 0.4 mm.
(5) And (3) putting the polyacrylamide hydrogel film prepared in the step (4) into a zirconium oxychloride solution of 0.3mol/L, and standing for 2 h.
(6) And (3) washing the film obtained in the step (5) by using pure water, transferring the film to 0.05 mol/L2- (N-morpholine) ethanesulfonic acid (MES) buffer solution, adjusting the pH of the 2- (N-morpholine) ethanesulfonic acid buffer solution to 6.5 by using a sodium hydroxide solution, shaking for 40min, taking out, washing for 3 times by using the pure water, removing redundant chemical reagents, soaking in the pure water for 6h, and cutting into a required shape to obtain the PZ-DGT adsorption film (refer to the Chinese patent application with the application number of 201310689076.5).
(7) Using scanning electron microscopyAnd (3) testing the distribution condition of the adsorption material on the adsorption film prepared in the step (6) by using a mirror (figure 1), and finding that zirconium dioxide particles are uniformly distributed on the adsorption film, and the particle size is less than or equal to 0.2 mu m, so that the PZ-DGT adsorption film is expected to represent the distribution of effective silicon content in micron to sub-millimeter level resolution. Adsorption kinetics batch test was performed using 50mL centrifuge tubes, each containing 10mL of 5. mu.g cm-3The silicic acid (effective silicon) solution and 1 PZ-DGT adsorption film (disc-shaped, diameter 2.5cm, thickness 0.4mm) are respectively taken out after reaction for 0.5, 1, 2, 5, 10, 20, 30, 60, 90, 120 and 1440min, 3 parallel experiments are set, the change of silicic acid concentration in the centrifuge tube before and after the reaction is tested, and the kinetics of silicic acid absorption by the PZ-DGT adsorption film is calculated, which is shown in figure 2. As can be seen from fig. 2, the absorption of silicic acid in the PZ-DGT adsorption film in the first 30min shows a linear increasing trend, and almost all silicic acid in the solution in the first 60min is absorbed, which indicates that the PZ-DGT adsorption film has a faster absorption rate and a higher adsorption capacity for silicic acid. In summary, PZ-DGT adsorption membranes are suitable for characterizing the distribution of effective silicon content at micron to sub-millimeter resolution.
Step two, assembling the plant incubator:
a certain moist soil collected from Jiangsu was loaded into a U-shaped organic glass tank (FIG. 3, internal size, height × width × depth ═ 20 × 10 × 2cm), a track etching membrane (polycarbonate membrane, pore diameter 0.2 μm, thickness 10 μm; Nuclepore, Whatman) and an organic glass baffle were attached and fixed on the organic glass tank, the moist soil, the track etching membrane and the organic glass baffle were tightly attached, the top of the organic glass tank was kept open after standing, and a suitable amount of pure water was added to the upper part of the soil. The plant incubator shown in fig. 3 has the following advantages: (1) the sealing performance is good; (2) the space is large, sufficient growth space can be provided for the whole vegetative growth stage (seedling stage, tillering stage and jointing stage) of the rice, the root system can be ensured to be unfolded and grown, and the overlapping between the root systems is reduced; (3) easy to be disassembled and convenient for later-stage placement of the PZ-DGT adsorption film.
Step three, plant cultivation:
transferring the rice seedlings to a plant incubator, enabling the rice root systems to be close to the track etching film as much as possible, and inclining the plant incubator by 30 degrees to enable the root systems to grow more easily along the track etching film.
Step four, placing the PZ-DGT adsorption film:
and (2) at the tillering stage of rice growth, taking down an organic glass baffle in a plant incubator, sequentially placing a polyether sulfone filter membrane and the rectangular strip PZ-DGT adsorption membrane (with the length multiplied by the width multiplied by the thickness being equal to-3 cm multiplied by-1 cm multiplied by-0.4 cm) prepared in the step one on a track etching membrane in a plant rhizosphere region (figures 4 and 5), enabling the upper edge of the PZ-DGT adsorption membrane to be in a horizontal state, marking the rhizosphere position corresponding to the upper left corner of the PZ-DGT adsorption membrane as a coordinate origin (0, 0), gradually increasing the coordinate values of the transverse rightward (x axis) and longitudinal downward (y axis), controlling the temperature in the placing process to be 20 +/-1 ℃, and taking out the polyether sulfone filter membrane and the PZ-DGT adsorption membrane after 4 hours. FIG. 4 is a side view of the plant incubator (FIG. 3) with the critical areas of imaging marked in the curved boxes, exploded in detail as shown in FIG. 5. In fig. 5, the label 4 is soil, the label 6 is a polyethersulfone filter membrane and a PZ-DGT adsorption membrane, the label 7 is a track etching membrane, and the label 8 is an organic glass baffle.
Step five, dry glue treatment:
and (3) putting the recovered rectangular strip PZ-DGT adsorption membrane on a polyether sulfone filter membrane, pre-drying the adsorption membrane and the polyether sulfone filter membrane by light pressure, and then drying the pre-dried adsorption membrane and the pre-dried filter membrane for 8 hours at the temperature of 60 ℃ by using a dry glue instrument to ensure that the adsorption membrane is completely dried and is tightly attached to the filter membrane.
Sixthly, analyzing the silicon cumulant on the PZ-DGT adsorption film:
analyzing silicon cumulant of different positions on PZ-DGT adsorption film after dry glue treatment by utilizing laser ablation-inductively coupled plasma mass spectrometry (LA-ICP-MS), namely analyzing silicon cumulant of different positions on PZ-DGT adsorption film after dry glue treatment29Si count value (cps), and synchronously acquiring13C count value (cps) is used to calibrate the silicon measurement results, and the silicon to carbon count value ratio (C/C) is calculated29Si:13C,cps/cps)。
Seventhly, data visualization processing:
sequentially overlapping the PZ-DGT adsorption membrane and the polyether sulfone filter membrane to form a DGT device, and respectively exposing the DGT device to the concentration (C)sol) Is 0, 0.8 or 1.6mg L-1And put in the fully stirred silicic acid solutionRecovering DGT device after 4h at 20 + -1 deg.C, taking out PZ-DGT adsorption film, and recording the accumulated flux of silicon on the adsorption film as F according to formula F ═ CsolD/. DELTA.g was calculated. These PZ-DGT adsorption membranes of known cumulative flux of silicon were processed and analyzed according to Steps five and six to establish cumulative flux of silicon (F, ng cm)-2s-1) Ratio to silicon to carbon count value (29Si/13C, cps/cps) as shown in fig. 6. As can be seen from FIG. 6, the cumulative flux F of silicon is 0.06 ng cm to 0.67ng cm-2s-1Within the range of (1), the ratio of the silicon to the carbon count value of (29Si/13C, cps/cps) and F increase linearly, which shows that the PZ-DGT adsorption film has excellent adsorption performance on silicon, and the linear relationship can be used to convert the cumulative flux of silicon in samples with known silicon-carbon count values. And (3) converting the silicon accumulated flux on the PZ-DGT adsorption film in the sixth step, F, then, performing two-dimensional visual presentation (Contour diagram) on the silicon accumulated flux on the PZ-DGT adsorption film by using Sigmaplot (version 12.5) data processing software, setting a coordinate point at the upper left corner of the picture as an original point (0, 0) in the step c, gradually increasing coordinate values of a transverse rightward (x axis) and a longitudinal downward (y axis), and respectively setting a transverse distance and a longitudinal distance between a plant rhizosphere effectiveness silicon distribution point and the original point, so that the spatial information (a coordinate system in the figure 3) of the PZ-DGT adsorption film and the plant rhizosphere corresponds to obtain a plant rhizosphere effectiveness silicon distribution diagram, and the figure 7 is shown. The unit of effective silicon concentration in FIG. 7 is ng cm-2s-1The resolution of the effective silicon distribution was 73.4 μm (longitudinal) x 150 μm (lateral). In addition, MATLAB and ImageJ software can be used for two-dimensional visual presentation of data. As can be seen from FIG. 7, the combination of the PZ-DGT adsorption film and the rhizosphere box technology can obtain the sub-millimeter spatial resolution characteristic of the effective silicon content of the plant rhizosphere, and the existence of a silicon hot zone in the rice rhizosphere is also found, which indicates that the effectiveness or activity of the silicon is higher.
The embodiments of the present invention have been described in detail with reference to the above examples, but the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art.

Claims (8)

1. A method for carrying out two-dimensional visualization on the effectiveness silicon distribution of plant rhizosphere is characterized by comprising the following steps:
the method comprises the following steps: preparing a PZ-DGT adsorption film;
step two: cutting the PZ-DGT adsorption film into a rectangular strip shape or a square strip shape, sequentially contacting the PZ-DGT adsorption film, a polyether sulfone filter film and the PZ-DGT adsorption film with plant rhizosphere soil, taking out the PZ-DGT adsorption film after placing for a period of time, analyzing the distribution characteristics of silicon accumulation on the PZ-DGT adsorption film, and realizing two-dimensional visualization of plant rhizosphere effectiveness silicon distribution through data processing.
2. The method for two-dimensional visualization of the silicon distribution of the rhizosphere availability of plants according to claim 1, wherein the PZ-DGT adsorption film prepared in the first step is a polyacrylamide hydrogel film with uniformly distributed zirconium dioxide particles with the particle size of less than or equal to 0.2 microns on the surface.
3. The method for two-dimensional visualization of plant rhizosphere availability silicon distribution according to claim 1, wherein step two specifically comprises the steps of:
a: assembling a plant incubator;
b: transferring the plant seedlings into a plant incubator, enabling the plant root system to be close to the track etching film, and inclining the plant incubator by 25-30 degrees;
c: placing a PZ-DGT adsorption film: in the plant growth stage to be inspected, a polyether sulfone filter membrane and a rectangular or square strip-shaped PZ-DGT adsorption membrane are sequentially placed on a track etching membrane in a plant rhizosphere area, the upper edge of the PZ-DGT adsorption membrane is in a horizontal state, a rhizosphere position corresponding to the upper left corner of the PZ-DGT adsorption membrane is marked as a coordinate origin (0, 0), and the polyether sulfone filter membrane and the PZ-DGT adsorption membrane are taken out after the PZ-DGT adsorption membrane is placed for a period of time;
d: dry glue treatment: placing the taken PZ-DGT adsorption membrane on a polyether sulfone filter membrane, pre-drying the adsorption membrane and the polyether sulfone filter membrane, and then drying the pre-dried adsorption membrane and the polyether sulfone filter membrane to ensure that the adsorption membrane is completely dried and is tightly attached to the polyether sulfone filter membrane;
e: analyzing by an instrument: analyzing the silicon accumulation amount at different positions on the PZ-DGT adsorption film after the dry glue treatment by using an analytical instrument, namely29Si count value, and synchronously acquiring13The C count value is used for calibrating the silicon measurement result and calculating the ratio of the silicon to the carbon count value;
f: and (3) data visualization processing: sequentially overlapping and assembling a PZ-DGT adsorption membrane and a polyether sulfone filter membrane to form a DGT device, exposing the DGT device to a fully stirred silicic acid solution with known concentration for 4h, recovering the DGT device, and taking out the PZ-DGT adsorption membrane, wherein the silicon accumulated flux on the adsorption membrane is marked as F, and F ═ CsolD/. DELTA.g; processing and analyzing the PZ-DGT adsorption film with known silicon cumulative flux according to the steps d and e, establishing a linear relation between the ratio of the silicon cumulative flux (F) to the silicon-carbon count value, and converting the silicon cumulative flux (F) on the PZ-DGT adsorption film in the step e; and (3) performing two-dimensional visual presentation on the silicon accumulated flux on the PZ-DGT adsorption film by using data processing software, setting a coordinate point at the upper left corner of the picture as an original point (0, 0) in the step c, gradually increasing coordinate values transversely rightward and longitudinally downward to respectively obtain a transverse distance and a longitudinal distance from a plant rhizosphere effectiveness silicon distribution point to the original point, and enabling the PZ-DGT adsorption film and the space information of the plant rhizosphere to be corresponding to obtain a plant rhizosphere effectiveness silicon distribution map.
4. The method for two-dimensional visualization of plant rhizosphere availability silicon distribution according to claim 3, wherein step a specifically comprises: collecting wet soil, loading into U-shaped organic glass tank, attaching track etching film, fixing on the organic glass tank, standing the organic glass tank, opening the top, and adding appropriate amount of pure water into the soil.
5. The method for two-dimensional visualization of the plant rhizosphere availability silicon distribution according to claim 4, wherein the track-etched membrane in step a is a polycarbonate membrane with a pore size of 0.1-0.4 μm and a thickness of 6-11 μm.
6. The method for two-dimensional visualization of the plant rhizosphere availability silicon distribution according to claim 3, wherein the rectangular strip-shaped or square strip-shaped PZ-DGT adsorption film in the step c has a length of 1-5 cm, a width of 0.5-5 cm and a thickness of 0.1-0.5 mm, and the temperature is controlled to be 20 ± 1 ℃ during the placement process; the pore diameter of the polyethersulfone filter membrane is 0.45 mu m, the thickness of the polyethersulfone filter membrane is 0.014cm, and the length and width value or the diameter of the polyethersulfone filter membrane is the same as that of the PZ-DGT adsorption membrane.
7. The method for two-dimensional visualization of plant rhizosphere availability silicon distribution according to claim 3, wherein in the step d, a glue drying instrument dries the pre-dried adsorption membrane and the polyether sulfone filter membrane, the temperature of the glue drying instrument is 50-60 ℃, and the time for glue drying is 6-12 h.
8. A method for two-dimensional visualization of plant rhizosphere availability silicon distribution as defined in claim 3 wherein in step f said silicic acid solution has a known concentration Csol0 to 2.5mg L-1(ii) a D is the diffusion coefficient of silicic acid in the track etching film, namely 5.89 multiplied by 10-6cm2s-1At 20 ℃; the delta g is the thickness of the polyether sulfone filter membrane and is 0.014 cm; the PZ-DGT adsorption film is placed in a plant incubator for 4 hours.
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