CN110829871A - Novel carrier phase shift modulation method applied to modular multilevel matrix converter - Google Patents
Novel carrier phase shift modulation method applied to modular multilevel matrix converter Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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Abstract
The invention discloses a novel carrier phase-shift modulation method applied to a modular multilevel matrix converter, which is mainly provided for overcoming the defect of the traditional carrier phase-shift modulation when the MMMC module number is an even number. On the basis of a traditional carrier phase-shift modulation strategy, the original modulation of 1 control signal and 1 triangular carrier is changed into the modulation of 1 control signal and 2 triangular carriers, and the phase shift of the 2 triangular carriers is T/(2k), wherein T is the period of the triangular carrier, and k is the number of H bridge sub-modules on a bridge arm; then, summing the obtained 2 trigger signals; then carrying out the sine symbolic operation; and finally, the obtained trigger signal is used for controlling 4 IGBTs of the H-bridge submodule, so that the condition that the output voltages of the bridge arm H-bridge submodule are different in pairs is realized, and the total output level number of the bridge arm H-bridge submodule is expanded. The method can effectively improve the output voltage and current effects of the MMMC, and can reduce the use of the H bridge sub-modules on the bridge arm to a certain extent.
Description
Technical Field
The invention relates to the technical field of modulation and power electronics, in particular to a novel carrier phase shift modulation method applied to a modular multilevel matrix converter.
Background
With the continuous development of power semiconductor and microcontroller technologies, the application of power electronic power conversion devices in power systems is becoming more and more common. Due to the increasing capacity and voltage class of devices, power electronic converters are also developing towards high voltage and large capacity. The Modular Multilevel Converter (MMC) proposed by Rainer Marquardt has attracted much attention by the german scholars. The MMC is easy to modularize design and expand, is particularly suitable for occasions of medium/high voltage electric energy conversion, and mainly performs DC-AC conversion. To implement AC-AC conversion, two back-to-back MMCs are typically employed. For this reason, a new type of cascaded full-bridge AC-AC conversion, i.e., a Modular Multilevel Matrix Converter (MMMC), has been developed. The MMMC not only inherits the unique topological structure of the traditional matrix converter, but also has the characteristic of modularization, is easy to realize high-voltage large-capacity expansion, and has unique advantages in the aspects of high-power voltage transformation and frequency conversion.
At present, the research on the MMMC is still in a starting stage at home and abroad, and the research documents on the MMMC modulation strategy are less, mainly because the MMMC is more complex and more difficult when a complex modulation strategy is applied due to the structure of multiple modules and multiple bridge arms of the MMMC. For example, in the space vector modulation proposed in the meeting article "a new family of matrix converters" published in IEEE industrial electronics society at 27 th annual meeting and "study on dc side voltage control method of star cascade H-bridge SVG based on space vector modulation" published in the article "report on electrotechnical science at 2015 5 th era", the MMMC composed of n H-bridge sub-modules (SM) has 39nA possible switching state. Therefore, when the number of the bridge arm series modules is not more than 2, the modulation strategy can also be used. However, when the number of modules connected in series is too large, such a modulation strategy is difficult to apply. Although some researchers have optimized this modulation strategy, the number of modules is still complex. Therefore, for the MMMC modulation strategy, it is more appropriate to select a simpler carrier phase shift modulation strategy. But inWhen a carrier phase-shift modulation strategy is selected, the number of modules (such as 3 modules, 5 modules, 7 modules and the like) is mostly used as a research object at present, because when the number of the modules is even, the traditional carrier phase-shift modulation strategy can cause that the output conditions of every two bridge sub-modules of a bridge arm H bridge are completely consistent, so that the bridge arm H bridge sub-modules can not be efficiently used, and the MMMC work efficiency is low.
Disclosure of Invention
This section is for the purpose of summarizing some aspects of embodiments of the invention and to briefly introduce some preferred embodiments. In this section, as well as in the abstract and the title of the invention of this application, simplifications or omissions may be made to avoid obscuring the purpose of the section, the abstract and the title, and such simplifications or omissions are not intended to limit the scope of the invention.
The invention is provided in view of the problem that the utilization efficiency of the existing H bridge is not high.
Therefore, the invention provides a novel carrier phase shift modulation method applied to the modular multilevel matrix converter, which can improve the use efficiency of the bridge arm H bridge submodule and improve the output effect of the modular multilevel matrix converter.
In order to solve the technical problems, the invention provides the following technical scheme: adding a new triangular carrier wave on the basis of carrier phase shift modulation of a control signal and a triangular carrier wave modulation; modulating the two obtained triangular carriers with a control signal respectively to obtain two preliminary modulation signals; carrying out summation operation on the two obtained preliminary modulation signals corresponding to the same class; carrying out the sine operation on the summation result; and using the modulation signal obtained by the sing operation as a trigger signal of 4 IGBTs in the H-bridge submodule.
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein: original carrier phase shift modulation is controlled by bridge arm control signal SMxyAnd triangular carrier xykAdjusting to obtain a trigger signal of a kth submodule on an xy bridge arm, wherein x is a, b and c, y is r, s and t, and k is the number of H bridge submodules on the bridge arm; xy isiAnd xyi+1Phase shift ofIs T/k, wherein T is the period of the triangular carrier wave, and i is 1, 2, 3, 4 and 5; increasing the traditional k triangular carrier signals to 2k triangular carrier signals; the phase shift between two adjacent carrier signals in the 2k triangular carriers is T/(2k), wherein T is the period of the triangular carrier.
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein: defining: the modulation of the control signal of the qth sub-module of the ar bridge arm and the p th triangular carrier wave obtains a signal' arqpst", wherein q ═ 1, 2, 3, 4, 5, 6, p ═ 1, 2, and t ═ 1, 2; when t is 1, trigger signals of the IGBT1 and the IGBT4 in the 4 IGBTs of the H-bridge submodule are obtained, and when t is 2, trigger signals of the IGBT2 and the IGBT3 in the 4 IGBTs of the H-bridge submodule are obtained, and the following results are obtained: arhps1＝-ar(h+3)ps2，arhps2＝-ar(h+3)ps1Wherein h is 1, 2, 3.
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein: bridge arm control signal SMxyAnd triangular carrier xyk1Adjusting to obtain a first trigger signal of a kth module on an xy bridge arm; then the bridge arm control signal SMxyAnd triangular carrier xyk2Making the second trigger signal of the kth module on the xy bridge arm, xyk1And xyk2The phase shift of (A) is T/(2k), where T is the period of the triangular carrier.
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein: ark1When SMar is greater than SMar, outputting a high level (1); ark1When SMar is less than SMar, outputting low level (0); -ark1When SMar is less than SMar, outputting a high level (1); -ark1When SMar is greater than SMar, a low level (0) is output; ark2When SMar is greater than SMar, outputting a high level (1); ark2When SMar is less than SMar, outputting low level (0); -ark2When SMar is less than SMar, outputting a high level (1); -ark2When SMar is greater than SMar, a low level (0) is output; obtaining an ar bridge arm control signal SMar and a carrier ark1Sub-mold obtained by modulationTrigger signal of block, and ar bridge arm control signal SMar and carrier ark2The trigger signal of the resulting submodule is modulated.
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein: summing the 'first' trigger signal and 'second' trigger signal of each module, and adding arq1stAnd arq2stSynthesized as arksIWherein k is 1, 2, 3, 4, 5, 6; 1 and 2; for w ═ 1, 2, and 3, when t ═ 1, there are
arws1＝arw1s1+arw2s1
＝-ar(w+3)1s2-ar(w+3)2s2
ar(w+3)s1＝ar(w+3)1s1+ar(w+3)2s1
＝-arw1s2-arw2s2
When t is 2, there are
arws2＝arw1s2+arw2s2
＝-ar(w+3)1s1-ar(w+3)2s1
ar(w+3)s2＝ar(w+3)1s2+ar(w+3)2s2
＝-arw1s1-arw2s1
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein: defining: arws1’＝sign(arws1)，arws2’＝sign(arws2) Wherein w is 1, 2, 3, 4, 5, 6; redefined arks1＝arks1’，arks2＝arks2', wherein k is 1, 2, 3, 4, 5, 6.
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein:
Uarsmk＝(arks1-arks2)Udc
defining: 6H bridges of ar bridge armThe total output voltage of the module is UarsmI.e. by
Wherein, UarsmiThe output voltage of the ith H-bridge submodule of the ar bridge arm is 1, 2, 3, 4, 5 and 6, and ar is the output voltage of the ith H-bridge submodule of the ar bridge arm under the traditional carrier phase-shift modulation strategy1s2And ar4s1、ar2s2And ar5s1、ar3s2And ar6s1、ar4s2And ar1s1、ar5s2And ar2s1And ar6s2And ar3s1Are in an "inverse" relationship, i.e., arts2+ar(t+3)s1＝1,arts1+ar (t+3)s21, wherein t is 1, 2, 3,
Uarsmi＝(aris1-aris2)Udc
＝(1-ar(i+3)s2-aris2)Udc
＝(ar(i+3)s1-ar(i+3)s2)Udc
＝Uarsm(i+3)
wherein i is 1, 2, 3, can be obtained
Uarsm＝2(Uarsm1+Uarsm2+Uarsm3)
As a preferred solution of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention, wherein: the sub-module consists of a capacitor and an H bridge, and the trigger signals respectively control the IGBTs on the left side and the right side of the H bridge; one trigger signal controls an upper IGBT on the left side of the H bridge, and the upper IGBT is subjected to negation operation and then controls a lower IGBT on the left side of the H bridge; and the other trigger signal controls the upper IGBT on the right side of the H bridge, and controls the lower IGBT on the right side of the H bridge after the inversion operation is carried out on the upper IGBT.
The invention has the beneficial effects that: the invention provides a novel carrier phase-shift modulation strategy aiming at the defects of the traditional carrier phase-shift modulation strategy, which can expand the total output level number of bridge arm H bridge sub-modules, so that the output voltage (current) effect of MMMC is better, the use number of the H bridge sub-modules can be reduced to a certain extent, and the novel carrier phase-shift modulation strategy has high economical efficiency.
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In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein:
fig. 1 is a schematic structural diagram of a modular multilevel matrix converter applying the novel carrier phase shift modulation method of the modular multilevel matrix converter according to the present invention;
FIG. 2 is a schematic diagram of an H bridge sub-module structure on a bridge arm of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the invention;
fig. 3(a) is a schematic circuit structure diagram of a first output state of an H-bridge sub-module of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to the present invention;
fig. 3(b) is a schematic circuit diagram of a second output state of an H-bridge sub-module of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to the present invention;
fig. 3(c) is a schematic circuit diagram of a third output state of an H-bridge sub-module of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to the present invention;
fig. 3(d) is a schematic circuit diagram of a fourth output state of the H-bridge sub-module of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to the present invention;
FIG. 4 is a schematic diagram of a novel carrier phase shift modulation strategy of the novel carrier phase shift modulation method of the present invention applied to a modular multilevel matrix converter;
FIG. 5 is a schematic diagram of a conventional carrier phase shift modulation strategy of the novel carrier phase shift modulation method of the present invention applied to a modular multilevel matrix converter;
FIG. 6 is a diagram of a conventional carrier phase shift modulation analysis of the novel carrier phase shift modulation method of the present invention applied to a modular multilevel matrix converter;
FIG. 7 is a novel carrier phase shift modulation analysis diagram of the novel carrier phase shift modulation method of the present invention applied to a modular multilevel matrix converter;
FIG. 8(a) shows the output voltage U of the bridge arm under the traditional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present inventionarsmA schematic diagram;
FIG. 8(b) is a graph showing the output voltage U of the bridge arm under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present inventionarsmA schematic diagram;
fig. 9(a) is a schematic diagram of output voltages of 6 modules MMMC under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
fig. 9(b) is a schematic diagram of output voltages of 6 modules MMMC under a conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
fig. 9(c) is a schematic diagram of output currents of 6 modules MMMC under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
fig. 9(d) is a schematic diagram of output currents of 6 modules MMMC under a conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
FIG. 9(e) is a diagram showing the output U of 6 module bridge arms under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present inventionarsmA schematic diagram;
FIG. 9(f) shows the output U of 6 module bridge arms under the conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converterarsmA schematic diagram;
fig. 10(a) is a schematic diagram of output voltages of 12 modules MMMC under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
fig. 10(b) is a schematic diagram of output voltages of 12 modules MMMC under a conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to the present invention;
fig. 10(c) is a schematic diagram of output currents of 12 modules MMMC under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
fig. 10(d) is a schematic diagram of output currents of 12 modules MMMC under a conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to the present invention;
FIG. 10(e) shows the output U of 12 module bridge arms under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present inventionarsmA schematic diagram;
FIG. 10(f) shows the output U of 12 module bridge arms in the conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present inventionarsmA schematic diagram;
fig. 11(a) is a schematic diagram of MMMC output voltage simulation at 6 modules under the novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
fig. 11(b) is a schematic diagram of MMMC output voltage simulation when 12 modules are used in the conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
FIG. 11(c) is a schematic diagram of MMMC output current simulation at 6 modules under a novel modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter
Fig. 11(d) is a schematic diagram of MMMC output current simulation when 12 modules are used in the conventional modulation strategy of the novel carrier phase shift modulation method applied to the modular multilevel matrix converter of the present invention;
fig. 11(e) is a schematic diagram of MMMC novel modulation levels when the novel carrier phase shift modulation method of the present invention is applied to a modular multilevel matrix converter 6 module;
fig. 11(f) is a schematic diagram of MMMC conventional modulation level when the novel carrier phase shift modulation method 12 module of the present invention is applied to a modular multilevel matrix converter;
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, specific embodiments accompanied with figures are described in detail below, and it is apparent that the described embodiments are a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making creative efforts based on the embodiments of the present invention, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
Furthermore, reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
The present invention will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially in general scale for convenience of illustration, and the drawings are only exemplary and should not be construed as limiting the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
Meanwhile, in the description of the present invention, it should be noted that the terms "upper, lower, inner and outer" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation and operate, and thus, cannot be construed as limiting the present invention. Furthermore, the terms first, second, or third are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The terms "mounted, connected and connected" in the present invention are to be understood broadly, unless otherwise explicitly specified or limited, for example: can be fixedly connected, detachably connected or integrally connected; they may be mechanically, electrically, or directly connected, or indirectly connected through intervening media, or may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
Referring to fig. 1 to 7, a first embodiment of the present invention provides a novel carrier phase shift modulation method applied to a modular multilevel matrix converter, which changes the modulation of one carrier signal into the modulation of two carrier signals, wherein the method includes adding a triangular carrier on the basis of a control signal and the carrier phase shift modulation of a triangular carrier modulation; modulating the two obtained triangular carriers with a control signal respectively to obtain two preliminary modulation signals; carrying out summation operation on the two obtained preliminary modulation signals corresponding to the same class; carrying out the sine operation on the summation result; and using the modulation signal obtained by the sine operation as a trigger signal of 4 IGBTs of the H-bridge submodule.
Further, referring to fig. 1, the MMMC is composed of 9 bridge arms, each of which is composed of k H-bridge Submodules (SM) connected in series and an inductor L connected in series; referring to fig. 2, each H-bridge submodule is formed by connecting an H-full bridge and a dc capacitor C in parallel, and each H-full bridge is formed by 4 IGBT anti-parallel diodes T1-T4; referring to FIG. 4, each H-bridge submodule has 4 output conditions, namely the output voltage U of SMsm＝Udc、-Udc0 and a clamped state, wherein UdcThe voltage at two ends of the capacitor C is adopted, and the clamping state means that all 4 IGBTs are in a turn-off state; referring to fig. 3, in 4 IGBTs of the H-bridge submodule in fig. 3(a), T1 and T4 are turned on, and T2 and T3 are turned off, at which time U is turned onsm＝Udc(ii) a In the 4 IGBTs of the H bridge submodule module in the figure 3(b), T2 and T3 are turned on, and T1 and T4 are turned offAt this time Usm＝-Udc(ii) a In the 4 IGBTs of the H bridge submodule in FIG. 3(c), T3 and T4 are turned on, T1 and T2 are turned off, and at the moment, U is turned onsm0; in the 4 IGBTs of the H bridge submodule in FIG. 3(d), T1 and T2 are turned on, T3 and T4 are turned off, and at the moment, U is turned onsm＝0。
Specifically, the following are defined: the modulation of the control signal of the qth sub-module of the ar bridge arm and the p th triangular carrier wave obtains a signal' arqpst", wherein q is 1, 2, 3, 4, 5, 6, p is 1, 2, and t is 1, 2. When t is 1, trigger signals of the IGBT1 and the IGBT4 in the 4 IGBTs of the H-bridge sub-module are obtained, and when t is 2, trigger signals of the IGBT2 and the IGBT3 in the 4 IGBTs of the H-bridge sub-module are obtained. Thus, ar can be obtainedhps1＝-ar(h+3)ps2，arhps2＝-ar(h+3)ps1Wherein: h is 1, 2 and 3. Summing the 'first' trigger signal and 'second' trigger signal of each module, and adding arq1stAnd arq2stSynthesized as arksIWherein k is 1, 2, 3, 4, 5, 6; 1 and 2; for w ═ 1, 2, and 3, when t ═ 1, there are
arws1＝arw1s1+arw2s1
＝-ar(w+3)1s2-ar(w+3)2s2
ar(w+3)s1＝ar(w+3)1s1+ar(w+3)2s1
＝-arw1s2-arw2s2
When t is 2, there are
arws2＝arw1s2+arw2s2
＝-ar(w+3)1s1-ar(w+3)2s1
ar(w+3)s2＝ar(w+3)1s2+ar(w+3)2s2
＝-arw1s1-arw2s1
Defining: arws1’＝sign(arws1)，arws2’＝sign(arws2) (ii) a Wherein w is 1, 2, 3, 4, 5, 6. Redefined arks1＝arks1’，arks2＝arks2'; wherein k is 1, 2, 3, 4, 5, 6. U shapearsmk＝(arks1-arks2)UdcDefining: the total output voltage of 6H bridge submodules of the ar bridge arm is UarsmI.e. by
Wherein, UarsmiThe output voltage of the ith H-bridge submodule of the ar bridge arm is given, where i is 1, 2, 3, 4, 5, 6. Under the traditional carrier phase shift modulation strategy, ar1s2And ar4s1、ar2s2And ar5s1、ar3s2And ar6s1、ar4s2And ar1s1、ar5s2And ar2s1And ar6s2And ar3s1Are in an inverse relationship, i.e. arts2+ar(t+3)s1＝1,arts1+ar (t+3)s21, t is 1, 2 and 3.
Uarsmi＝(aris1-aris2)Udc
＝(1-ar(i+3)s2-aris2)Udc
＝(ar(i+3)s1-ar(i+3)s2)Udc
＝Uarsm(i+3)
Wherein, i is 1, 2 and 3. Can obtain Uarsm＝2(Uarsm1+Uarsm2+Uarsm3)
Preferably, referring to fig. 5 and 6, the total output voltages of the 6H-bridge sub-modules of the bridge arm are overlapped, that is, the output voltages of the SMar1 and SMar4, the SMar2 and SMar5, and the output voltages of the SMar3 and SMar6 are completely consistent, so that the H-bridge sub-modules of the bridge arm cannot be used efficiently under the conventional modulation strategy, which results in the reduction of the MMMC working efficiency; in addition, the total output voltage U of the 6H-bridge submodules of the bridge armarsmThe level waveform is 2U at each jumpdcSo that the total output level number of the bridge arm is reduced sharply; bridge arm output voltage U of MMMC of 2k modules under traditional modulation strategyarsmBridge arm output U of MMMC equivalent to k modules under novel modulation strategyarsm。
It should be recognized that embodiments of the present invention can be realized and implemented by computer hardware, a combination of hardware and software, or by computer instructions stored in a non-transitory computer readable memory. The methods may be implemented in a computer program using standard programming techniques, including a non-transitory computer-readable storage medium configured with the computer program, where the storage medium so configured causes a computer to operate in a specific and predefined manner, according to the methods and figures described in the detailed description. Each program may be implemented in a high level procedural or object oriented programming language to communicate with a computer system. However, the program(s) can be implemented in assembly or machine language, if desired. In any case, the language may be a compiled or interpreted language. Furthermore, the program can be run on a programmed application specific integrated circuit for this purpose.
Further, the operations of processes described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The processes described herein (or variations and/or combinations thereof) may be performed under the control of one or more computer systems configured with executable instructions, and may be implemented as code (e.g., executable instructions, one or more computer programs, or one or more applications) collectively executed on one or more processors, by hardware, or combinations thereof. The computer program includes a plurality of instructions executable by one or more processors.
Further, the method may be implemented in any type of computing platform operatively connected to a suitable interface, including but not limited to a personal computer, mini computer, mainframe, workstation, networked or distributed computing environment, separate or integrated computer platform, or in communication with a charged particle tool or other imaging device, and the like. Aspects of the invention may be embodied in machine-readable code stored on a non-transitory storage medium or device, whether removable or integrated into a computing platform, such as a hard disk, optically read and/or write storage medium, RAM, ROM, or the like, such that it may be read by a programmable computer, which when read by the storage medium or device, is operative to configure and operate the computer to perform the procedures described herein. Further, the machine-readable code, or portions thereof, may be transmitted over a wired or wireless network. The invention described herein includes these and other different types of non-transitory computer-readable storage media when such media include instructions or programs that implement the steps described above in conjunction with a microprocessor or other data processor. The invention also includes the computer itself when programmed according to the methods and techniques described herein. A computer program can be applied to input data to perform the functions described herein to transform the input data to generate output data that is stored to non-volatile memory. The output information may also be applied to one or more output devices, such as a display. In a preferred embodiment of the invention, the transformed data represents physical and tangible objects, including particular visual depictions of physical and tangible objects produced on a display.
Example 2
Referring to fig. 8 to 11, a second embodiment of the present invention is different from the first embodiment in that an MMMC simulation model is built on a Matlab/Simulink simulation platform, and main parameters of the system are as follows:
referring to fig. 8, bridge arm output voltage U in 1 cycle under two conventional and novel modulation strategiesarsmFIG. 8(a) and FIG. 6 are a simulation curve and bridge arm output U, respectivelyarsmThe curves are consistent with the theoretical analysis results, and the simulation curve and the bridge arm output U are respectively shown in FIG. 8(b) and FIG. 7arsmThe curves have consistent theoretical analysis results, and the correctness of the novel modulation strategy is verified; referring to fig. 9, a simulation curve of MMMC output voltage current and bridge arm output voltage in 10 cycles under two conventional and novel modulation strategies for 6 modules; referring to fig. 10, a simulation curve of MMMC output voltage current and bridge arm output voltage in 10 cycles under two conventional and novel modulation strategies for 12 modules; under the novel strategy, the output voltage, the current and other waveform sine of the MMMC are better, the harmonic content is lower, and the novel strategy is verifiedSuperiority of the strategy; referring to fig. 11, in 10 cycles, the simulation results of the new modulation strategy at the time of the 6 modules are compared with the simulation results of the traditional modulation strategy at the time of the 12 modules, the output effect of the new modulation strategy adopted by the 6 modules MMMC is equal to the output effect of the traditional modulation strategy adopted by the 12 modules MMMC, the use of the H-bridge module is reduced to a certain extent, the cost is reduced, and the economy of the new modulation strategy is verified.
Furthermore, the novel modulation strategy has an expansion effect on the total output level number of the H bridge sub-modules of the MMMC bridge arm, so that harmonic waves in output voltage and current are reduced, the output voltage and current harmonic waves are less, the electric energy quality is higher, and the output effect of the MMMC of the k module adopting the novel modulation strategy is equal to the output effect of the MMMC of the 2k module adopting the traditional modulation strategy. The novel modulation strategy comprises that on the basis of a traditional carrier phase-shift modulation strategy, the original modulation of 1 control signal and 1 triangular carrier is changed into the modulation of 1 control signal and 2 triangular carriers, and the phase shift of the 2 triangular carriers is T/(2k), wherein T is the period of the triangular carrier, and k is the number of H bridge sub-modules on a bridge arm; then, summing the obtained 2 trigger signals; sign symbol operation is carried out; and finally, the obtained trigger signal is used for controlling 4 IGBTs of the H-bridge submodule, so that the output voltage conditions of the H-bridge submodule of the bridge arm are different in pairs, and the total output level number of the H-bridge submodule on the bridge arm is expanded. The sub-module consists of a capacitor and an H bridge, and the trigger signals respectively control the IGBTs on the left side and the right side of the H bridge; one trigger signal controls an upper IGBT on the left side of the H bridge, and the upper IGBT is subjected to negation operation and then controls a lower IGBT on the left side of the H bridge; and the other trigger signal controls the upper IGBT on the right side of the H bridge, and controls the lower IGBT on the right side of the H bridge after the inversion operation is carried out on the upper IGBT.
Specifically, referring to fig. 5 and 6, the total output voltages of the 6H-bridge sub-modules of the bridge arm are overlapped, that is, the output voltages of the SMar1 and the SMar4, the SMar2 and the SMar5, and the output voltages of the SMar3 and the SMar6 are completely consistent, so that the H-bridge sub-modules of the bridge arm cannot be used efficiently under the conventional modulation strategy, and the MMMC working efficiency is reduced; in addition, the total output voltage U of the 6H-bridge submodules of the bridge armarsmThe level waveform is 2U at each jumpdcSo thatThe total output level number of the bridge arm is sharply reduced; bridge arm output voltage U of MMMC of 2k modules under traditional modulation strategyarsmBridge arm output U of MMMC equivalent to k modules under novel modulation strategyarsm。
It should be noted that the above-mentioned embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (9)
1. The novel carrier phase shift modulation method applied to the modular multilevel matrix converter is characterized in that: the modulation of one triangular carrier signal is changed into the modulation of two triangular carrier signals, including,
adding a new triangular carrier wave on the basis of carrier phase shift modulation of a control signal and a triangular carrier wave modulation;
modulating the two obtained triangular carriers with a control signal respectively to obtain two preliminary modulation signals;
carrying out summation operation on the two obtained preliminary modulation signals corresponding to the same class;
carrying out the sine operation on the summation result;
and using the modulation signal obtained by the sing operation as a trigger signal of 4 IGBTs in the H-bridge submodule.
2. The novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to claim 1, characterized in that: the triangular carrier increase method is as follows,
original carrier phase shift modulation is controlled by bridge arm control signal SMxyAnd triangular carrier xykAdjusting to obtain a trigger signal of a kth submodule on an xy bridge arm, wherein x is a, b and c, y is r, s and t, and k is the number of H bridge submodules on the bridge arm;
xyiand xyi+1Has a phase shift of T/k, whereinT is the period of the triangular carrier wave, i is 1, 2, 3, 4 and 5;
increasing the traditional k triangular carrier signals to 2k triangular carrier signals;
the phase shift between two adjacent carrier signals in the 2k triangular carriers is T/(2k), wherein T is the period of the triangular carrier.
3. The novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to claim 2, characterized in that: the trigger signal acquisition step is as follows,
the modulation of the control signal of the qth sub-module of the ar bridge arm and the p th triangular carrier wave obtains a signal' arqpst", wherein q ═ 1, 2, 3, 4, 5, 6, p ═ 1, 2, and t ═ 1, 2;
when t is 1, trigger signals of an IGBT1 and an IGBT4 in 4 IGBTs of the H bridge submodule are obtained;
when t is 2, trigger signals of an IGBT2 and an IGBT3 in 4 IGBTs of the H bridge submodule are obtained;
thus, it is possible to obtain: arhps1＝-ar(h+3)ps2，arhps2＝-ar(h+3)ps1；
Wherein h is 1, 2, 3.
4. The novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to claim 3, characterized in that: the preliminary modulation signal may comprise a preliminary modulation signal,
bridge arm control signal SMxyAnd triangular carrier xyk1Adjusting to obtain a first trigger signal of a kth module on the xy bridge arm;
then the bridge arm control signal SMxyAnd triangular carrier xyk2Adjusting to obtain a second trigger signal of a kth module on the xy bridge arm;
xyk1and xyk2The phase shift of (A) is T/(2k), where T is the period of the triangular carrier.
5. The novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to claim 4, characterized in that: said preliminary modulation signal may also comprise in particular,
ark1when SMar is greater than SMar, outputting a high level (1);
ark1when SMar is less than SMar, outputting low level (0);
-ark1when SMar is less than SMar, outputting a high level (1);
-ark1when SMar is greater than SMar, a low level (0) is output;
ark2when SMar is greater than SMar, outputting a high level (1);
ark2when SMar is less than SMar, outputting low level (0);
-ark2when SMar is less than SMar, outputting a high level (1);
-ark2when SMar is greater than SMar, a low level (0) is output;
obtaining an ar bridge arm control signal SMar and a carrier ark1Modulating the trigger signal of the obtained submodule, and controlling the signal SMar and the carrier ar of the ar bridge armk2The trigger signal of the resulting submodule is modulated.
6. The novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to claim 4, characterized in that: and summing the first trigger signal and the second trigger signal of each module, comprising the steps of,
ar is madeq1stAnd arq2stSynthesized as arksIWherein k is 1, 2, 3, 4, 5, 6; 1 and 2;
for w ═ 1, 2, 3, when t ═ 1, there are:
arws1＝arw1s1+arw2s1
＝-ar(w+3)1s2-ar(w+3)2s2
ar(w+3)s1＝ar(w+3)1s1+ar(w+3)2s1
＝-arw1s2-arw2s2
when t is 2, there are:
arws2＝arw1s2+arw2s2
＝-ar(w+3)1s1-ar(w+3)2s1
ar(w+3)s2＝ar(w+3)1s2+ar(w+3)2s2
＝-arw1s1-arw2s1
7. the novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to claim 6, characterized in that: the sine operation comprises the following steps of,
defining:
arws1’＝sign(arws1)，arws2’＝sign(arws2)，
wherein w is 1, 2, 3, 4, 5, 6;
redefined arks1＝arks1’，arks2＝arks2’，
Wherein k is 1, 2, 3, 4, 5, 6.
8. The novel carrier phase shift modulation method applied to the modular multilevel matrix converter according to claim 7, wherein: the trigger signal is set as follows,
Uarsmk＝(arks1-arks2)Udc
defining: the total output voltage of 6H bridge submodules of the ar bridge arm is UarsmI.e. by
Wherein, UarsmiThe output voltage of an ith H-bridge submodule of an ar bridge arm is represented, wherein i is 1, 2, 3, 4, 5 and 6;
under the traditional carrier phase shift modulation strategy, ar1s2And ar4s1、ar2s2And ar5s1、ar3s2And ar6s1、ar4s2And ar1s1、ar5s2And ar2s1And ar6s2And ar3s1There is an "inverting" relationship between them, i.e.,
arts2+ar(t+3)s1＝1,arts1+ar(t+3)s2＝1
wherein t is 1, 2, 3,
Uarsmi＝(aris1-aris2)Udc
＝(1-ar(i+3)s2-aris2)Udc
＝(ar(i+3)s1-ar(i+3)s2)Udc
＝Uarsm(i+3)
wherein i is 1, 2, 3, can be obtained
Uarsm＝2(Uarsm1+Uarsm2+Uarsm3)
9. A modulation method of an H-bridge cascade system is characterized in that: comprises the steps of (a) preparing a mixture of a plurality of raw materials,
the H-bridge submodule consists of a capacitor and an H-bridge, and the trigger signals respectively control the IGBTs on the left side and the right side of the H-bridge; one trigger signal controls the upper IGBT on the left side of the H bridge, and the upper IGBT on the left side of the H bridge is controlled after the upper IGBT is subjected to negation operation; and the other trigger signal controls the upper IGBT on the right side of the H bridge, and controls the lower IGBT on the right side of the H bridge after the inversion operation is carried out on the upper IGBT.
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