CN110828187A - Preparation method of large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode - Google Patents
Preparation method of large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode Download PDFInfo
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- CN110828187A CN110828187A CN201911135799.4A CN201911135799A CN110828187A CN 110828187 A CN110828187 A CN 110828187A CN 201911135799 A CN201911135799 A CN 201911135799A CN 110828187 A CN110828187 A CN 110828187A
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- Prior art keywords
- tin oxide
- zinc oxide
- particle zinc
- mesoporous tin
- double
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 76
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910001887 tin oxide Inorganic materials 0.000 title claims abstract description 43
- 239000002245 particle Substances 0.000 title claims abstract description 38
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000137 annealing Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/204—Light-sensitive devices comprising an oxide semiconductor electrode comprising zinc oxides, e.g. ZnO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a preparation method of a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode. The material disclosed by the invention is simple and convenient in preparation method, easy for industrial production, low in production cost and strong in practicability, and can create a more efficient solar cell device for the life of people.
Description
Technical Field
The invention relates to the technical field of solar cell materials, in particular to a preparation method of a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode.
Background
Solar energy is a green clean energy with wide sources, can not only solve the global energy crisis, but also has extremely important strategic significance on the sustainable development of the environment. The dye-sensitized solar cell (DSSC) has high conversion efficiency, stable performance and low production cost in theory, thereby having potential research value. Although the conversion efficiency is theoretically high, in actual research, the photoelectric conversion efficiency of the dye-sensitized solar cell is not ideal. At present, the improvement of the photoelectric conversion efficiency of the dye-sensitized solar cell is generally achieved by the following method: firstly, the energy level potential barrier between the photo-anode and the dye is reduced and the charge transmission is enhanced by matching the photo-anode energy band structure; and the other is that the light-capturing and absorbing capacity of the solar cell is improved by improving the photo-anode microstructure of the solar cell, and the interaction effect of light and an active region is enhanced. Therefore, the invention provides a preparation method of a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode, which is characterized in that large-particle zinc oxide and mesoporous tin oxide step energy levels are constructed between an FTO electrode and dye molecules, so that sunlight absorption and utilization can be increased through scattering of large-particle zinc oxide, the energy level barrier between the photo-anode and the dye is reduced, charge transmission is enhanced, the surface of tin oxide can be passivated, electron hole recombination is reduced, and the photoelectric conversion efficiency of a dye-sensitized solar cell is improved. Further improving the performance of the device and meeting the living needs of people.
Disclosure of Invention
The invention aims to solve the problems that: the preparation method comprises the steps of printing a mesoporous tin oxide film with a certain thickness on FTO conductive glass through a screen, annealing at a high temperature for a certain time to obtain a mesoporous tin oxide photoanode, then printing a layer of large-particle zinc oxide with a certain thickness through a screen, and annealing at a high temperature for a certain time to obtain the large-particle zinc oxide and mesoporous tin oxide photoanode.
The technical scheme provided by the invention for solving the problems is as follows: a preparation method of a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode comprises the steps of printing a mesoporous tin oxide film with a certain thickness on FTO conductive glass through a screen, annealing at a high temperature for a certain time to obtain a mesoporous tin oxide photo-anode, then printing a layer of large-particle zinc oxide with a certain thickness through a screen, and annealing at a high temperature for a certain time to obtain a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode.
Preferably, the size of the mesoporous tin oxide is 20nm to 50 nm.
Preferably, the thickness of the mesoporous tin oxide film is 12 um-15 um.
Preferably, the annealing temperature of the mesoporous tin oxide film is 500 ℃, and the annealing time is 30 min.
Preferably, the large-particle zinc oxide has a size of 400nm to 500 nm.
Preferably, the thickness of the large-particle zinc oxide film is 3 um-5 um.
Preferably, the annealing temperature of the large-particle zinc oxide film is 450 ℃, and the annealing time is 120 min.
Compared with the prior art, the invention has the advantages that: the invention provides a preparation method of a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode, which is characterized in that large-particle zinc oxide and mesoporous tin oxide step energy levels are constructed between an FTO electrode and dye molecules, so that sunlight absorption and utilization can be increased through scattering of large-particle zinc oxide, the energy level barrier between the photo-anode and dye is reduced, charge transmission is enhanced, the surface of tin oxide can be passivated, electron hole recombination is reduced, and the photoelectric conversion efficiency of a dye-sensitized solar cell is improved by more than 30%. The preparation method of the large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode is applied to dye-sensitized solar cell devices, the material preparation method is simple and convenient, the industrial production is easy, the production cost is low, the practicability is high, and more efficient solar cell devices can be created for the life of people.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
FIG. 1 is a schematic structural view of a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode according to the present invention;
the attached drawings are marked as follows: 1. FTO conductive glass; 2. mesoporous tin oxide; 3. large particle zinc oxide.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the accompanying drawings and examples, so that how to implement the embodiments of the present invention by using technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
A preparation method of a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode comprises the following specific steps:
1. printing a mesoporous tin oxide photo-anode screen:
taking 0.5g of mesoporous tin oxide slurry, carrying out blade coating on FTO conductive glass for 4 times in a screen printing mode, and repeating the blade coating for 3 times each time to obtain a mesoporous tin oxide slurry film of about 12 um.
2. Annealing the mesoporous tin oxide film:
and (3) putting the FTO conductive glass obtained in the step (1) into a muffle furnace, and annealing at 500 ℃ for 30min to obtain the mesoporous tin oxide photo-anode.
3. Screen printing of large-particle zinc oxide photoanode:
taking 0.5g of large-particle zinc oxide slurry, carrying out blade coating on FTO conductive glass for 1 time in a screen printing mode, and repeating the blade coating for 3 times to obtain a mesoporous zinc oxide slurry film of about 3 um.
4. Annealing the large-particle zinc oxide film:
and (4) putting the FTO conductive glass obtained in the step (3) into a muffle furnace, and annealing at 450 ℃ for 120min to obtain the large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode.
The foregoing is merely illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the claims. The present invention is not limited to the above embodiments, and the specific structure thereof is allowed to vary. All changes which come within the scope of the invention as defined by the independent claims are intended to be embraced therein.
Claims (7)
1. A preparation method of a large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode is characterized by comprising the following steps: the preparation method comprises the steps of printing a mesoporous tin oxide film with a certain thickness on FTO conductive glass through a screen, annealing at a high temperature for a certain time to obtain a mesoporous tin oxide photoanode, then printing a layer of large-particle zinc oxide with a certain thickness through a screen, and annealing at a high temperature for a certain time to obtain a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode.
2. The method for preparing a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode according to claim 1, wherein the method comprises the following steps: the size of the mesoporous tin oxide is 20 nm-50 nm.
3. The method for preparing a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode according to claim 1, wherein the method comprises the following steps: the thickness of the mesoporous tin oxide film is 12 um-15 um.
4. The method for preparing a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode according to claim 1, wherein the method comprises the following steps: the annealing temperature of the mesoporous tin oxide film is 500 ℃, and the annealing time is 30 min.
5. The method for preparing a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode according to claim 1, wherein the method comprises the following steps: the size of the large-particle zinc oxide is 400 nm-500 nm.
6. The method for preparing a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode according to claim 1, wherein the method comprises the following steps: the thickness of the large-particle zinc oxide film is 3 um-5 um.
7. The method for preparing a large-particle zinc oxide and mesoporous tin oxide double-layer photoanode according to claim 1, wherein the method comprises the following steps: the annealing temperature of the large-particle zinc oxide film is 450 ℃, and the annealing time is 120 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911135799.4A CN110828187A (en) | 2019-11-19 | 2019-11-19 | Preparation method of large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911135799.4A CN110828187A (en) | 2019-11-19 | 2019-11-19 | Preparation method of large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode |
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| Publication Number | Publication Date |
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| CN110828187A true CN110828187A (en) | 2020-02-21 |
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| CN201911135799.4A Pending CN110828187A (en) | 2019-11-19 | 2019-11-19 | Preparation method of large-particle zinc oxide and mesoporous tin oxide double-layer photo-anode |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101232049A (en) * | 2007-01-26 | 2008-07-30 | 中国科学院物理研究所 | Nanometer oxide porous membrane electrode and preparing method and application thereof |
| CN101441941A (en) * | 2008-12-19 | 2009-05-27 | 北京化工大学 | Method for preparing semiconductor oxide micro-nano compound structure film |
| US20130206215A1 (en) * | 2010-10-15 | 2013-08-15 | Sharp Corporation | Quantum dot sensitized solar cell |
| CN104091693A (en) * | 2014-07-03 | 2014-10-08 | 北京科技大学 | Method for preparing Cd1-xMnxSe quantum dot solar cell |
| CN106277040A (en) * | 2016-08-19 | 2017-01-04 | 上海工程技术大学 | Tin ash microsphere that a kind of crystallite dimension is controlled and preparation method and application |
-
2019
- 2019-11-19 CN CN201911135799.4A patent/CN110828187A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101232049A (en) * | 2007-01-26 | 2008-07-30 | 中国科学院物理研究所 | Nanometer oxide porous membrane electrode and preparing method and application thereof |
| CN101441941A (en) * | 2008-12-19 | 2009-05-27 | 北京化工大学 | Method for preparing semiconductor oxide micro-nano compound structure film |
| US20130206215A1 (en) * | 2010-10-15 | 2013-08-15 | Sharp Corporation | Quantum dot sensitized solar cell |
| CN104091693A (en) * | 2014-07-03 | 2014-10-08 | 北京科技大学 | Method for preparing Cd1-xMnxSe quantum dot solar cell |
| CN106277040A (en) * | 2016-08-19 | 2017-01-04 | 上海工程技术大学 | Tin ash microsphere that a kind of crystallite dimension is controlled and preparation method and application |
Non-Patent Citations (1)
| Title |
|---|
| 李伟: "《太阳能电池材料及其应用》", 31 December 2014 * |
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