CN110820044A - High-quality diamond growth method and system - Google Patents
High-quality diamond growth method and system Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
Abstract
The invention relates to a high-quality diamond growth method and a high-quality diamond growth system. A method of high quality diamond growth comprising the steps of: s1, pretreating the surface of the seed crystal, putting the seed crystal into a growth bin, and introducing hydrogen and oxygen to etch the surface of the seed crystal for 15-60 min; s2, introducing a carbon source to grow diamond; s3, judging whether the growth time reaches the first time, if yes, executing a step S4; if not, go to step S5; s4, stopping introducing the carbon source, introducing oxygen, etching for 10-30min, and executing a step S2; s5, detecting whether impurities appear on the surface of the diamond, if so, executing impurity processing operation, and executing the step S2 after 10-30 min; if not, step S3 is executed. The method can avoid selecting high-quality diamond chips as seed crystals, reduces the cost of the seed crystals, ensures that the newly grown diamond grows in a layered mode, repairs the surface defects of the diamond, reduces the number of the surface defects, does not reduce the growth rate of the diamond, and still maintains the high growth rate which is not lower than 8 mu m/h.
Description
Technical Field
The invention relates to the field of diamond growth, in particular to a high-quality diamond growth method and a high-quality diamond growth system.
Background
The high-quality diamond has high forbidden band width, wide optical transmission spectrum, ultrahigh hardness and thermal conductivity, excellent insulativity, acid resistance, heat resistance, radiation resistance and other excellent physical and chemical properties, and can be applied to the fields of precision machining, optical windows, precious stones, MEMS (Micro-Electro-Mechanical systems), chips and the like. However, the reserves of high quality natural diamond are limited, and thus various synthetic diamond methods such as high temperature and high pressure method, hot wire chemical vapor deposition method have been developed. In the method for synthesizing diamond by MPCVD (Microwave plasma chemical vapor deposition), diamond with high quality and large area can be synthesized theoretically because no impurities are introduced, and the method is the most commonly used method for producing diamond at present.
The quality of diamond synthesized by the MPCVD method is related to a plurality of factors, including carbon source concentration, gas flow rate, temperature, substrate table height, microwave power, synthesis temperature and the like. It is known that diamond can be synthesized by introducing a certain amount of carbon source and controlling appropriate process parameters, but the occurrence of surface defects is still very frequent. Therefore, the mainstream practice at present is to select diamond with higher quality as the seed crystal, but the cost is very expensive, and the generation of surface defects, such as twinning polycrystals, point defects, line defects and the like, cannot be completely avoided, and the generation of the defects greatly hinders the high-end application of the diamond.
Patent document No. 02826062.7 discloses an apparatus and method for producing diamond by introducing CH4/H2/N2In the case of (2), a certain proportion of O is added simultaneously2The growth temperature can be reduced, the growth quality is improved, but the growth rate is obviously reduced. Therefore, the present invention is not satisfactory, and the development and innovation thereof are needed.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, it is an object of the present invention to provide a high quality diamond growth method and system that can produce high quality, low impurity diamonds while ensuring that the growth rate is not reduced.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method of high quality diamond growth comprising the steps of:
s1, pretreating the surface of the seed crystal, putting the seed crystal into a growth bin, and introducing hydrogen and oxygen to etch the surface of the seed crystal for 15-60 min;
s2, introducing a carbon source to grow diamond;
s3, judging whether the growth time reaches the first time, if yes, executing a step S4; if not, go to step S5;
s4, stopping introducing the carbon source, introducing oxygen, etching for 10-30min, and executing a step S2;
s5, detecting whether impurities appear on the surface of the diamond, if so, executing impurity processing operation, and executing the step S2 after 10-30 min; if not, step S3 is executed.
The first time is 10-20 h.
In the preferred high quality diamond growth method, in step S5, the operation of detecting impurities specifically includes:
s51, detecting the growth thickness of the diamond in real time by a detection device, generating and transmitting thickness data to a control center;
s52, the control center generates a real-time growth curve according to the thickness data, obtains the real-time growth rate of the real-time growth curve, and compares the real-time growth rate with the comparison rate of the same time point in the comparison data;
s53, judging whether the difference value between the two is larger than a preset value, if so, generating impurities; if not, no impurities appear.
Preferably, the method for growing high quality diamond comprises the following steps:
s531, introducing hydrogen and matching microwaves with first preset power;
s532, continuously increasing the gas pressure to a first preset pressure, and adjusting the microwave power to a second preset power;
and S533, introducing oxygen for etching after the temperature of the etching bin reaches the target temperature.
In the preferred method for growing high quality diamond, the step S51 further includes:
the control center controls the up and down movement of the diamond position according to the thickness data, and performs step S3.
In the preferred method for growing high quality diamond, the step S2 further includes:
and introducing a certain amount of argon gas simultaneously in the process of introducing the carbon source.
In the preferred method for growing high quality diamond, in step S1, the pretreatment is:
polishing the surface of the seed crystal, cleaning the surface by acetone or absolute ethyl alcohol, performing acid washing by using a piranha solution, washing away acid liquor by using deionized water, and drying.
In the preferred high quality diamond growth method, in step S1, the surface etching includes the steps of:
introducing hydrogen, introducing 300-1500KW microwave starter under 2-20mbar pressure, gradually increasing pressure and power to control temperature at 840-860 deg.C, and introducing oxygen at a certain proportion for etching.
A high quality diamond growth system using the method, comprising: the device comprises a growth bin, a control center, a detection device and a storage module;
the detection device is used for detecting the surface position of the diamond in real time, and generating and outputting thickness data;
the storage module is used for storing the comparison data and the real-time detection data;
the control center is used for receiving the thickness data, reading the comparison data in the storage module, comparing the data, controlling equipment to operate according to the comparison result and controlling the growth cabin to normally operate.
The high-quality diamond growth system preferably further comprises a tray lifting device for controlling the tray carrying the seed crystals to move up and down according to the instructions of the control center.
Compared with the prior art, the method and the system for growing the high-quality diamond provided by the invention have the advantages that the high-quality diamond sheet does not need to be selected as the seed crystal, the cost of the seed crystal is reduced, the newly grown diamond grows in a layered mode and grows thick step by step, the surface defects of the diamond are repaired, the number of the surface defects is reduced, the growth rate of the diamond is not reduced, and the high growth rate is still maintained to be not less than 8 mu m/h.
Drawings
FIG. 1 is a flow chart of a high quality diamond growth method provided by the present invention;
fig. 2 is a block diagram of a high quality diamond growth system provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and effects of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides a high-quality diamond growth method, which comprises the following steps:
s1, pretreating the surface of the seed crystal, putting the seed crystal into a growth bin, and introducing hydrogen and oxygen to etch the surface of the seed crystal for 15-60 min;
s2, introducing a carbon source to grow diamond;
s3, judging whether the growth time reaches the first time, if yes, executing a step S4; if not, go to step S5;
s4, stopping introducing the carbon source, introducing oxygen, etching for 10-30min, and executing a step S2;
s5, detecting whether impurities appear on the surface of the diamond, if so, executing impurity processing operation, and executing the step S2 after 10-30 min; if not, step S3 is executed.
Accordingly, the present invention also provides a high quality diamond growth system using the method, comprising: the device comprises a growth bin 1, a control center, a detection device 3 and a storage module;
the detection device 3 is used for detecting the surface position of the diamond in real time, and generating and outputting thickness data; the detection device 3 is a position sensor;
the storage module is used for storing the comparison data and the real-time detection data;
the control center is used for receiving the thickness data, reading the comparison data in the storage module, comparing the data, controlling equipment to operate according to the comparison result and controlling the growth cabin 1 to normally operate.
As a preferable scheme, in this embodiment, the pretreatment is:
polishing the surface of the seed crystal, cleaning the surface by acetone or absolute ethyl alcohol, performing acid washing by using a piranha solution, washing away acid liquor by using deionized water, and drying.
Specifically, the first time is preferably 10 to 20 hours. The pretreatment process before synthesizing the diamond is as follows, firstly selecting the seed crystal with smooth surface, the growth surface is (100) surface, polishing, then cleaning the organic matter on the surface of the seed crystal by acetone or absolute ethyl alcohol, then using the prepared piranha solution to carry out acid cleaning, removing the metal impurities on the surface of the seed crystal, washing away the acid liquor by deionized water, drying and putting into a cavity to grow.
Before growth, firstly introducing hydrogen, introducing 300-1500KW microwave under 2-20mabr pressure to start to generate plasma, then gradually increasing pressure and power to make the seed crystal keep stable at about 850 ℃, introducing a certain proportion of oxygen at the moment, and etching for 15-60 min. After etching, closing oxygen and introducing CH with a certain proportion4And the environment temperature of the seed crystal is between 900-1300 ℃, and the growth is started. It should be noted that the hydrogen gas is introduced at a rate of 100 and 1000 sccm; the introduction rate of the oxygen is 4% -10% of the introduction rate of the hydrogen; the carbon source (i.e., CH)4) The introduction rate of (b) is 10 to 15% of the hydrogen introduction rate.
Specifically, CH is suspended in the growth chamber 1 after the diamond is stably grown for 10 hours4The plasma is stabilized after waiting for 5min, then oxygen is introduced, a certain amount of oxygen is introduced to etch the crystal surface, the oxygen is closed after etching for 10-30min, and the plasma is stabilized after waiting for 5minDaughter stabilization, re-introduction of a certain proportion of CH4And recovering stable growth. During this period, other environmental parameters are not changed or adjusted to some extent as required, and the invention is not limited. By the synthesis process, a high-quality diamond wafer does not need to be selected as the seed crystal, and the cost of the seed crystal is reduced. The newly grown diamond grows in layers and grows gradually, and the diamond sheet after cutting and separation can meet the requirements of optical-grade diamond and even electronic grade diamond.
Meanwhile, in order to make the quality of the produced diamond better, in the growth process of the diamond, the detection device 3 is matched, when the growth surface is detected to have impurities, even if the first time is not reached, the operation of closing the carbon source and introducing oxygen is still executed, and etching is carried out.
As a preferred scheme, in this embodiment, the operation of detecting the impurity specifically includes:
s51, detecting the growth thickness of the diamond in real time by the detection device 3, generating and transmitting thickness data to a control center;
s52, the control center generates a real-time growth curve according to the thickness data, obtains the real-time growth rate of the real-time growth curve, and compares the real-time growth rate with the comparison rate of the same time point in the comparison data;
s53, judging whether the difference value between the two is larger than a preset value, if so, generating impurities; if not, no impurities appear.
Specifically, the position sensor can accurately detect the thickness of the diamond, the control center receives thickness data and synthesizes the thickness data into the growth curve, the growth curve is compared with the comparison data, whether defects exist is judged according to the comparison result, then the related flow of equipment is controlled, and the qualified rate of diamond growth is guaranteed; in the growth process of the diamond, the detection of the defects is an important link, and the detection method provided by the invention mainly detects the growth rate of the diamond in time, then realizes the uniform growth of the diamond and improves the yield of the diamond.
As a preferable scheme, in this embodiment, the comparison data is:
and detecting and recording growth thickness data of the complete growth period of the normally grown diamond for a plurality of times, generating a plurality of growth curve graphs to obtain a plurality of groups of growth rate data, and obtaining contrast rate curves of different time points through data fitting.
Specifically, because the growth of the diamond is influenced by the environment, thickness data of the growth of the diamond under different environments and at different time points are read, a plurality of groups of different growth curves are generated, and a growth rate table at different time points is obtained through data fitting; the growth rate is the slope of the growth curve, and a real-time measurement will yield a real-time growth rate.
Preferably, in this embodiment, the impurity treatment operation is:
s531, introducing hydrogen and matching microwaves with first preset power;
s532, continuously increasing the gas pressure to a first preset pressure, and adjusting the microwave power to a second preset power;
and S533, introducing oxygen for etching after the temperature of the etching bin reaches the target temperature.
In the growth process, if the etching modification operation needs to be executed, firstly controlling to stop introducing the carbon source, then introducing hydrogen, wherein the preferable introduction flow rate of the hydrogen is 100-. The second predetermined power is preferably 2000-; the first predetermined pressure is preferably 15-20kpa, and the target temperature is preferably 850-. The etching gas specifically comprises oxygen and hydrogen, and the introduction amount of the oxygen is 2% -16% of that of the hydrogen. At this time, the oxygen is an etching gas.
The growth rate of the diamond may be in a fast growth state or a low growth state due to the defect, and therefore, the difference between the real-time growth rate and the contrast rate is calculated, and if the difference is within a predetermined value range, the diamond is normally grown, and if the difference exceeds the predetermined value, the diamond is regarded as having the defect.
Preferably, in this embodiment, the step S2 further includes:
and introducing a certain amount of argon gas simultaneously in the process of introducing the carbon source.
The plasma generated by the MPCVD method is in an ellipsoid shape, the size of a plasma sphere and the plasma density distribution can be adjusted by adjusting the ratio of power to pressure, but the influence on the shape of the plasma is very limited by adjusting the process parameters. The introduction of argon can make the density distribution of plasma more uniform, and is suitable for enlarging the effective area of the grown diamond. Meanwhile, argon does not participate in the growth process, so that the grown diamond does not contain impurities related to the argon. Therefore, the introduction of argon is more effective for batch growth of diamond and growth of polycrystalline diamond; the introducing speed of the argon is 40-60% of the introducing speed of the hydrogen.
Preferably, in this embodiment, the diamond growth system further includes a tray lifting device for controlling the tray 2 carrying the seed crystal to move up and down according to the instruction of the control center.
The tray 2 comprises a base and a bearing platform arranged on the base;
the bearing platform is in a regular polygon frustum shape or a round platform shape, a groove is formed in the upper surface, and the edge of an opening of the groove is designed to be a chamfer.
Specifically, in the diamond growth process, seed crystals are placed in the grooves, and the height of the upper surfaces of the seed crystals is 1-2mm lower than the edge of the concave edge; the diameter of the groove is determined according to the effective growth area of the synthesized single crystal, and the diameter is less than or equal to 55 mm; before use, auxiliary heat dissipation materials such as filaments, sheets and the like are firstly placed at the bottom of the groove, the filament sheets are made of high-temperature-resistant (namely capable of bearing the temperature of more than 1400 ℃) materials such as molybdenum, nickel and the like, and the purpose of placing the heat conduction materials is mainly to adjust the growth temperature of seed crystals so as to be suitable for the growth of diamond; the inner face of the groove is a smooth face, such as a smooth mirror face.
Specifically, the tray lifting device comprises a pulse motor and a lifting rail, and the tray 2 is arranged on the lifting rail, so that the height of each lifting is controlled to be 0.1-1 mm.
The step S51 further includes:
and the control center controls the up-and-down movement of the diamond position according to the thickness data to enable the growth surface of the diamond to be always in the optimal growth position, and step S3 is executed.
Specifically, the substrate stage lifting step specifically includes:
s511, detecting the growth thickness of the diamond in real time by the detection device 3, generating and transmitting thickness data to a control center;
s512, the control center calculates the interval thickness according to the thickness data, judges whether the interval thickness exceeds a preset value or not, controls the substrate table to ascend or descend the preset value if the interval thickness exceeds the preset value, and executes S511; if not, S511 is executed.
Specifically, the interval thickness is a thickness grown within a time from a last time the substrate stage is moved to a present time detected; if the thickness of the workpiece is not moved, the difference value between the detected thickness and the initial thickness is calculated. The reason why the rise or fall is described here is that the rise needs to be controlled in the case of normal growth, and the substrate stage needs to be controlled to fall in the case of etching. And detecting the thickness data of the diamond growth in real time while stably growing, and controlling the height of the substrate table according to the thickness data to enable the growth surface of the diamond to be always in the optimal growth position. The optimal growth site is determined according to the frequency of the microwave and the position of the plasma cluster in the growth chamber 1.
After the growth is carried out by using the method and the system provided by the invention, the FTIR (Fourier transform infrared absorption spectrometer) test, the XRD (diffraction of X-rays) test of the high-quality diamond piece and the Raman (Raman spectrum) test of the high-quality diamond piece are respectively carried out on the grown diamond, and the following results are obtained:
1. performing FTIR (Fourier transform Red)External absorption spectrometer), the result shows that the transparent area only contains the double phonon lines of the inherent C-C bond of diamond (1900--1) No other impurities, and a small amount of nitrogen defects are formed in the edge polycrystalline and transparent regions;
2. carrying out XRD (diffraction of X-rays) test result of the high-quality diamond sheet, wherein the detection result is good in crystallization state;
3. raman (Raman Spectra) test of high quality diamond chips was carried out, and only 1332cm was contained-1Peak, no other impurities.
In summary, the diamond produced using the system and method provided by the present invention has the following effects:
1. by the synthesis process, a high-quality diamond wafer does not need to be selected as the seed crystal, and the cost of the seed crystal is reduced. The newly grown diamond grows in layers and grows gradually thick, and the diamond sheet after cutting and separation can meet the requirements of optical-grade diamond and even electronic grade diamond;
2. by the process method, the surface defects can be repaired, the number of the surface defects is reduced, and finally the high-quality single crystal diamond sheet is synthesized;
3. the process method does not reduce the growth rate of the diamond, still maintains the high growth rate which is not less than 8 mu m/h, and is suitable for industrial stable production.
It should be understood that equivalents and modifications of the technical solution and inventive concept thereof may occur to those skilled in the art, and all such modifications and alterations should fall within the scope of the appended claims.
Claims (10)
1. A method of high quality diamond growth comprising the steps of:
s1, pretreating the surface of the seed crystal, putting the seed crystal into a growth bin, and introducing hydrogen and oxygen to etch the surface of the seed crystal for 15-60 min;
s2, introducing a carbon source to grow diamond;
s3, judging whether the growth time reaches the first time, if yes, executing a step S4; if not, go to step S5;
s4, stopping introducing the carbon source, introducing oxygen, etching for 10-30min, and executing a step S2;
s5, detecting whether impurities appear on the surface of the diamond, if so, executing impurity processing operation, and executing the step S2 after 10-30 min; if not, step S3 is executed.
2. A high quality diamond growth method according to claim 1 wherein said first time is 10-20 hours.
3. A high quality diamond growth method according to claim 1, wherein said step S5, wherein the operation of detecting impurities specifically comprises:
s51, detecting the growth thickness of the diamond in real time by a detection device, generating and transmitting thickness data to a control center;
s52, the control center generates a real-time growth curve according to the thickness data, obtains the real-time growth rate of the real-time growth curve, and compares the real-time growth rate with the comparison rate of the same time point in the comparison data;
s53, judging whether the difference value between the two is larger than a preset value, if so, generating impurities; if not, no impurities appear.
4. A high quality diamond growth method according to claim 3, characterized in that said impurity treatment operation is:
s531, introducing hydrogen and matching microwaves with first preset power;
s532, continuously increasing the gas pressure to a first preset pressure, and adjusting the microwave power to a second preset power;
and S533, introducing oxygen for etching after the temperature of the etching bin reaches the target temperature.
5. A high quality diamond growth method according to claim 4, wherein said step S51 further comprises:
the control center controls the up and down movement of the diamond position according to the thickness data, and performs step S3.
6. A high quality diamond growth method according to claim 1, wherein said step S2 further comprises:
and introducing a certain amount of argon gas simultaneously in the process of introducing the carbon source.
7. A high quality diamond growth method according to claim 1, characterized in that in said step S1, said pretreatment is:
polishing the surface of the seed crystal, cleaning the surface by acetone or absolute ethyl alcohol, performing acid washing by using a piranha solution, washing away acid liquor by using deionized water, and drying.
8. A high quality diamond growth method according to claim 1, wherein said surface etching in step S1 comprises the steps of:
introducing hydrogen, introducing 300-1500KW microwave starter under 2-20mbar pressure, gradually increasing pressure and power to control temperature at 840-860 deg.C, and introducing oxygen at a certain proportion for etching.
9. A high quality diamond growth system using the method of any one of claims 1 to 8, comprising: the device comprises a growth bin, a control center, a detection device and a storage module;
the detection device is used for detecting the surface position of the diamond in real time, and generating and outputting thickness data;
the storage module is used for storing the comparison data and the real-time detection data;
the control center is used for receiving the thickness data, reading the comparison data in the storage module, comparing the data, controlling equipment to operate according to the comparison result and controlling the growth cabin to normally operate.
10. A high quality diamond growth system according to claim 9 further comprising a tray lift for controlling the tray carrying the seed crystal to move up and down according to instructions from the control center.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113249787A (en) * | 2021-03-25 | 2021-08-13 | 湖北碳六科技有限公司 | Preparation method of static growth monocrystalline diamond |
| CN113278946A (en) * | 2021-05-17 | 2021-08-20 | 四川瑞能晶石科技有限公司 | Method for preparing diamond by MPCVD |
| CN113463192A (en) * | 2021-07-02 | 2021-10-01 | 吉林大学 | Method for splicing and growing diamond single crystal |
| CN113652746A (en) * | 2021-10-21 | 2021-11-16 | 天津本钻科技有限公司 | Method for improving quality of single crystal diamond |
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| CN105810615A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator |
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