CN110817810B - Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof - Google Patents

Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof Download PDF

Info

Publication number
CN110817810B
CN110817810B CN201911250171.9A CN201911250171A CN110817810B CN 110817810 B CN110817810 B CN 110817810B CN 201911250171 A CN201911250171 A CN 201911250171A CN 110817810 B CN110817810 B CN 110817810B
Authority
CN
China
Prior art keywords
diselenide
bismuth
trinickel
preparation
flexible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911250171.9A
Other languages
Chinese (zh)
Other versions
CN110817810A (en
Inventor
简基康
杜炳生
王盛儒
雷仁博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong University of Technology
Original Assignee
Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong University of Technology filed Critical Guangdong University of Technology
Priority to CN201911250171.9A priority Critical patent/CN110817810B/en
Publication of CN110817810A publication Critical patent/CN110817810A/en
Application granted granted Critical
Publication of CN110817810B publication Critical patent/CN110817810B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The invention belongs to the technical field of semiconductor materials, and particularly relates to a flexible nano material growing with bismuth, trinickel and diselenide and a preparation method thereof. The flexible nano material with the grown bismuth trinickel diselenide is prepared by placing bismuth nitrate and selenium dioxide in a mixed solution according to a molar weight ratio of 1 (1.3-1.7) and carrying out solvothermal reaction with a metal nickel flexible material, and has the advantages of conductivity, nano-property and flexibility, wide application prospect, simple preparation method operation and suitability for large-scale industrial production.

Description

Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor materials. More particularly, relates to a flexible nano material with bismuth, trinickel and diselenide growing and a preparation method thereof.
Background
Bismuth is a metal element, has relatively rich reserves, is widely applied to the field of inorganic semiconductors, has excellent performance in the fields of energy, catalysis and luminescence, is also a key element in novel thermoelectric materials and topological insulator materials, and is widely applied. Bismuth trinickel diselenide (Bi) 2 Ni 3 Se 2 ) The bismuth-based semiconductor material also has a monoclinic crystal structure, has a space group of C2/m (No.12), and has a narrow band gap, so that the bismuth-based semiconductor material has a good application prospect in the field of photoelectricity.
At present, most of the bismuth, the nickel and the diselenide are prepared by a solid-phase sintering method, but the sintering temperature needs to be about 1000-1500 ℃, the volatilization speed of bismuth in the sintering process is fast, a large amount of energy and raw materials need to be consumed, and the bismuth, the nickel and the diselenide are not suitable for large-scale industrial production. In addition to solid-phase sintering, Richard Weihrich et al disclose a method of sintering Bi 2 X 3 (X ═ Se, S) is converted in a glycol liquid phase system to Bi, NiBi, NiBiSe and Ni 3 Bi 2 X 2 Method of preparing a compound, but obtaining Ni 3 Bi 2 X 2 The material of (A) is a solid powder, a large amount of second phase exists, and Ni is obtained 3 Bi 2 X 2 The grain size is relatively large (Rommel S M, Krach A, Peter P, et al. conversion Reactions of solutions: From a Surprising Three-Step Mechanism facing direct ProductFormation[J].Chemistry-A European Journal,2016,22(18):6333-6339.)。
With the research and development of portable electronic devices and devices, the requirements on the conductivity, the portability and the flexibility of the required semiconductor materials are higher and higher, and the dibismuth trinickel diselenide prepared at present cannot meet the requirements of the portable electronic devices or devices. Therefore, it is urgently needed to provide a flexible nano material with bismuth, trinickel and diselenide grown and a preparation method thereof.
Disclosure of Invention
The invention aims to solve the technical problems of the prior art that the solid-phase sintering method has more energy and raw material loss, the crystal grain size obtained by liquid-phase conversion is large, and the requirements of portable electronic equipment or devices cannot be met, and provides a preparation method of a flexible nano material growing with bismuth, tri-nickel and diselenide.
The invention also aims to provide the flexible nano material which is prepared by the preparation method and grows with the dibismuth, trinickel and diselenide.
The invention also aims to provide application of the flexible nano material with the growth of the dibismuth trinickel diselenide in the field of semiconductor materials.
The above purpose of the invention is realized by the following technical scheme:
a preparation method of a flexible nano material growing with bismuth, trinickel and diselenide comprises the following steps:
preparing a mixed solution of oleic acid containing polyvinylpyrrolidone and N, N-dimethylacetamide, adding bismuth nitrate and selenium dioxide, uniformly stirring, adding a metal nickel flexible material, carrying out a solvothermal reaction at a temperature of 150-200 ℃, cooling, taking out the metal nickel flexible material, washing and drying to obtain the composite material;
the oleic acid and N, N-dimethylacetamide mixed solution is prepared by mixing oleic acid and N, N-dimethylacetamide according to a volume ratio of 1 (1-3); the molar weight ratio of the bismuth nitrate to the selenium dioxide is 1 (1.3-1.7).
According to the invention, bismuth nitrate and selenium dioxide are placed into a mixed solution of oleic acid and N, N-dimethylacetamide according to a molar weight ratio of 1 (1.3-1.7), a conductive metal nickel flexible material is added for solvothermal reaction, nickel elements in the metal nickel flexible material are utilized to react to generate nano-flaky bismuth trinickel diselenide which is uniformly distributed on the surface of the metal nickel flexible material, and the obtained material has conductivity, nano-property and flexibility and can completely meet the requirements of portable electronic equipment or devices on semiconductor materials.
Preferably, the molar weight ratio of the bismuth nitrate to the selenium dioxide is 1 (1.3-1.5).
More preferably, the molar weight ratio of bismuth nitrate to selenium dioxide is 1: 1.5.
Preferably, the reaction temperature is 180-200 ℃.
More preferably, the reaction temperature is 200 ℃.
The reaction temperature of the invention is 150-200 ℃, compared with a solid-phase sintering method, the temperature required by the reaction is obviously reduced, and the energy consumption is greatly reduced.
Preferably, the volume ratio of the oleic acid to the N, N-dimethylacetamide is 1 (1-2).
More preferably, the volume ratio of oleic acid to N, N-dimethylacetamide is 1: 2.
Further, the reaction time is 5-15 h.
Preferably, the reaction time is 10-15 h.
More preferably, the reaction time is 15 h.
Furthermore, the weight-to-volume ratio of the polyvinylpyrrolidone to the mixed solution of oleic acid and N, N-dimethylacetamide is 1 (10-13) g/mL.
Preferably, the weight-to-volume ratio of the polyvinylpyrrolidone to the mixed solution of oleic acid and N, N-dimethylacetamide is 1 (12-13) g/mL.
More preferably, the weight-to-volume ratio of the polyvinylpyrrolidone to the mixed solution of oleic acid and N, N-dimethylacetamide is 1:12 g/mL.
Further, the metal nickel flexible material is nickel foil or foam nickel. When the metal nickel flexible material is foam nickel, nano spheres formed by self-assembling bisbismuth trinickel diselenide nano sheets can be grown on the foam nickel; when the metal nickel flexible material is nickel foil, a compact and upright bismuthyl trinickel diselenide nanosheet can be grown on the nickel foil.
Preferably, the metallic nickel flexible material is a nickel foil.
Furthermore, the container for the solvothermal reaction is a reaction kettle.
Preferably, the reaction vessel has a polytetrafluoroethylene liner.
In addition, the invention also provides the flexible nano material which is prepared by the preparation method and grows with the dibismuth, the trinickel and the diselenide.
In addition, the invention also provides application of the flexible nano material with the growth of the dibismuth trinickel diselenide in the field of semiconductor materials.
The invention has the following beneficial effects:
(1) the invention provides a novel preparation method of a flexible nano material with growing bismuth trinickel diselenide, bismuth nitrate and selenium dioxide are placed in a mixed solution according to the molar weight ratio of 1 (1.3-1.7) to carry out solvothermal reaction with an added metal nickel flexible material, so that uniformly distributed nano flaky bismuth trinickel diselenide can be generated.
(2) The flexible nano material growing with the dibismuth trinickel diselenide prepared by the method has conductivity, nano property and flexibility, can completely meet the requirements of portable electronic equipment or devices on semiconductor materials, and has wide application prospect.
Drawings
FIG. 1 is a diffraction phase characterization diagram of a flexible nanomaterial grown with bismuth trinickel diselenide in example 1 of the present invention.
FIG. 2 is a graph showing the morphology of the flexible nanomaterial of example 1 of the present invention grown with bismuth, trinickel, diselenide.
FIG. 3 is a diffraction phase characterization diagram of the flexible nanomaterial of example 3 grown with dibismuth, trinickel, diselenide according to the present invention.
FIG. 4 is a graph showing the morphology of the flexible nanomaterial of example 3 of the present invention in which bismuth, trinickel, diselenide has grown.
FIG. 5 is a graph showing the morphology of the flexible nanomaterial of comparative example 1 of the present invention grown with bismuth, trinickel, diselenide.
Detailed Description
The invention is further described with reference to the drawings and the following detailed description, which are not intended to limit the invention in any way. The reagents, methods and apparatus employed in the present invention are conventional in the art, except as otherwise indicated.
Unless otherwise indicated, reagents and materials used in the following examples are commercially available.
Example 1A Flexible nanomaterial grown with bismuth, trinickel, diselenide
The flexible nano material growing with the bismuth, the nickel and the diselenide is prepared by the following steps:
dissolving 3g of polyvinylpyrrolidone in a mixed solution of 12mL of oleic acid and 24mL of N, N-dimethylacetamide, adding 0.4849g of bismuth nitrate pentahydrate and 0.1663g of selenium dioxide, uniformly stirring, placing the mixture in a 50mL of polytetrafluoroethylene reaction kettle, adding 1cm × 2cm of foamed nickel, screwing the reaction kettle, placing the reaction kettle into an oven, reacting for 15 hours at the temperature of 200 ℃, cooling to room temperature, taking out the foamed nickel, washing with water and absolute ethyl alcohol in sequence, and drying in vacuum to obtain the polyvinylpyrrolidone.
Example 2A Flexible nanomaterial grown with bismuth, trinickel and diselenide
The flexible nano material growing with the bismuth, the nickel and the diselenide is prepared by the following steps:
dissolving 3g of polyvinylpyrrolidone in a mixed solution of 18mL of oleic acid and 18mL of N, N-dimethylacetamide, adding 0.4847g of bismuth nitrate pentahydrate and 0.1442g of selenium dioxide, uniformly stirring, placing the mixture in a 50mL of polytetrafluoroethylene reaction kettle, adding 1cm multiplied by 2cm of foamed nickel, screwing the reaction kettle, placing the reaction kettle into an oven, reacting at the temperature of 150 ℃ for 10 hours, cooling to room temperature, taking out the foamed nickel, washing with water and absolute ethyl alcohol in sequence, and drying in vacuum to obtain the polyvinylpyrrolidone.
Diffraction phase characterization and morphology characterization of the materials prepared in examples 1-2 were determined, wherein the diffraction phase characterization and morphology characterization results of example 1 are shown in fig. 1-2, and the results of example 2 are similar to those of example 1.
As can be seen from FIG. 1, the material prepared in example 1 of the present invention and Bibismuth trinickel diselenide (Bi) 2 Ni 3 Se 2 ) The peak positions of the standard diffraction cards can be in one-to-one correspondence, which shows that the bismuth trinickel diselenide prepared successfully in the embodiment 1 of the invention has Ni diffraction peaks from the substrate nickel foam, and in addition, a small part of impurity NiSe exists in the sample.
As can be seen from fig. 2, the dibismuth trinickel diselenide is nanospheres with a size of about 1 μm formed by self-assembling nanosheets with a thickness of about 5-10 nm, and the nanospheres uniformly and tightly grow on the foam nickel skeleton in a large area, which indicates that the flexible nanomaterial growing with dibismuth trinickel diselenide is successfully prepared in embodiment 1 of the present invention.
Example 3A Flexible nanomaterial grown with bismuth, Trinickel, and diselenide
The flexible nano material growing with the bismuth, the nickel and the diselenide is prepared by the following steps:
dissolving 3g of polyvinylpyrrolidone in a mixed solution of 12mL of oleic acid and 24mL of N, N-dimethylacetamide, adding 0.4848g of bismuth nitrate pentahydrate and 0.1662g of selenium dioxide, uniformly stirring, placing the mixture in a 50mL of polytetrafluoroethylene reaction kettle, adding a nickel foil with the thickness of 1cm multiplied by 2cm, screwing the reaction kettle, placing the reaction kettle in an oven, reacting at the temperature of 200 ℃ for 15 hours, cooling to room temperature, taking out the nickel foil, washing with water and absolute ethyl alcohol in sequence, and drying in vacuum to obtain the polyvinylpyrrolidone.
Example 4A Flexible nanomaterial grown with bismuth, trinickel, diselenide
The flexible nano material growing with the dibismuth, the trinickel and the diselenide is prepared by the following steps:
dissolving 3g of polyvinylpyrrolidone in a mixed solution of 9mL of oleic acid and 27mL of N, N-dimethylacetamide, adding 0.4850g of pentahydrate bismuth nitrate and 0.1887g of selenium dioxide, uniformly stirring, placing the mixture in a 50mL of polytetrafluoroethylene reaction kettle, adding a nickel foil with the thickness of 1cm multiplied by 2cm, screwing the reaction kettle, placing the reaction kettle in an oven, reacting at the temperature of 150 ℃ for 10 hours, cooling to the room temperature, taking out the nickel foil, washing with water and absolute ethyl alcohol in sequence, and drying in vacuum to obtain the copper-based catalyst.
Diffraction phase characterization and morphology characterization of the materials prepared in examples 3-4 were determined, wherein the diffraction phase characterization and morphology characterization results of example 3 are shown in fig. 3-4, and the results of example 4 are similar to those of example 1.
As can be seen from FIG. 3, the material prepared in example 3 of the present invention and Bibismuth trinickel diselenide (Bi) 2 Ni 3 Se 2 ) The peak positions of the standard diffraction cards can be in one-to-one correspondence, which shows that the bismuth trinickel diselenide is successfully prepared in the embodiment 3 of the invention, wherein the existing Ni diffraction peak comes from the substrate nickel foil, does not contain NiSe impurity, and is pure phase bismuth trinickel diselenide.
As can be seen from fig. 4, the dibismuth trinickel diselenide is in the shape of a nanosheet with a thickness of 10-20 nm, and the nanosheets uniformly and tightly vertically grow on the nickel foil, which indicates that the flexible nanomaterial on which the dibismuth trinickel diselenide grows is successfully prepared and obtained in embodiment 3 of the present invention.
Comparative example 1A Bibismuth trinickel diselenide Material
The bismuth trinickel diselenide material is prepared by the following steps:
dissolving 3g of polyvinylpyrrolidone in a mixed solution of 12mL of oleic acid and 24mL of N, N-dimethylacetamide, adding 0.7272g of bismuth nitrate pentahydrate and 0.1664g of selenium dioxide, uniformly stirring, placing the mixture in a 50mL of polytetrafluoroethylene reaction kettle, adding 1cm multiplied by 2cm of foamed nickel, screwing the reaction kettle, placing the reaction kettle in an oven, reacting at the temperature of 200 ℃ for 15 hours, cooling to room temperature, taking out the foamed nickel, washing with water and absolute ethyl alcohol in sequence, and drying in vacuum to obtain the polyvinylpyrrolidone.
The morphology characterization of the bismuthyl trinickel diselenide material prepared in comparative example 1 was determined, and the results are shown in fig. 5.
As can be seen from FIG. 5, when the molar weight ratio of bismuth nitrate to selenium dioxide does not satisfy 1 (1.3-1.7), the grown bismuthyltrinickel diselenide is not well combined with the foamed nickel, but is dispersed in the pores of the foamed nickel, and the particles of the synthesized sample are large, and most of the particles are in the micrometer scale.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (9)

1. A preparation method of a flexible nano material growing with bismuth, trinickel and diselenide is characterized by comprising the following steps:
preparing a mixed solution of oleic acid containing polyvinylpyrrolidone and N, N-dimethylacetamide, adding bismuth nitrate and selenium dioxide, uniformly stirring, adding a metal nickel flexible material, carrying out a solvothermal reaction at a temperature of 150-200 ℃, cooling, taking out the metal nickel flexible material, washing and drying to obtain the composite material;
the oleic acid and N, N-dimethylacetamide mixed solution is prepared by mixing oleic acid and N, N-dimethylacetamide according to a volume ratio of 1 (1-3); the molar weight ratio of the bismuth nitrate to the selenium dioxide is 1 (1.3-1.7).
2. The preparation method of claim 1, wherein the molar weight ratio of the bismuth nitrate to the selenium dioxide is 1 (1.3-1.5).
3. The preparation method of claim 2, wherein the molar weight ratio of the bismuth nitrate to the selenium dioxide is 1: 1.5.
4. The method according to any one of claims 1 to 3, wherein the reaction temperature is 180 to 200 ℃.
5. The method according to any one of claims 1 to 3, wherein the reaction time is 5 to 15 hours.
6. The preparation method according to any one of claims 1 to 3, wherein the weight/volume ratio of the polyvinylpyrrolidone to the mixed solution of oleic acid and N, N-dimethylacetamide is 1 (10 to 13) g/mL.
7. The preparation method according to any one of claims 1 to 3, wherein the metallic nickel flexible material is nickel foil or nickel foam.
8. The flexible nano material growing with the dibismuth trinickel diselenide prepared by the preparation method of any one of claims 1 to 7.
9. The use of the flexible nanomaterial grown with bismuthyltrinickel diselenide according to claim 8 in the field of semiconductor materials.
CN201911250171.9A 2019-12-09 2019-12-09 Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof Active CN110817810B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911250171.9A CN110817810B (en) 2019-12-09 2019-12-09 Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911250171.9A CN110817810B (en) 2019-12-09 2019-12-09 Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof

Publications (2)

Publication Number Publication Date
CN110817810A CN110817810A (en) 2020-02-21
CN110817810B true CN110817810B (en) 2022-09-06

Family

ID=69544082

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911250171.9A Active CN110817810B (en) 2019-12-09 2019-12-09 Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof

Country Status (1)

Country Link
CN (1) CN110817810B (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109621988B (en) * 2018-12-13 2021-11-26 安徽师范大学 Sea urchin-shaped hollow-structure nickel-copper-selenium ternary nano catalytic material and preparation method and application thereof
CN109817475B (en) * 2019-01-18 2020-10-09 三峡大学 Preparation method and application of bismuth-nickel sulfide positive electrode material

Also Published As

Publication number Publication date
CN110817810A (en) 2020-02-21

Similar Documents

Publication Publication Date Title
US20200148548A1 (en) Method for prepareing copper-nickel cobaltate nanowire and application thereof
CN110433816B (en) Preparation method of supported cobalt-doped cerium dioxide nanosheet
CN105776154A (en) Preparation method of tungsten diselenide nanosheet
Sinha et al. Preparation of silver powder through glycerol process
CN110980664B (en) Porous few-layer h-BN nanosheet and preparation method thereof
CN107555470B (en) A kind of method of two-step method synthesis zinc cadmium sulphur solid-solution material
CN102286007B (en) Solventless synthesis method for metal polynitrogen azole framework material
CN110372877A (en) Green preparation method of metal organic framework material
CN100545081C (en) Dendritic silver selenide nano crystal thin film material and preparation method
CN108996557B (en) Hollow sphere structured nickel oxide/copper oxide composite nano material and preparation method thereof
CN112938911A (en) Preparation method of boron nitride nanosheet
CN115069290A (en) Nitrogen-defect-containing porous carbon nitride-loaded monoatomic copper catalyst, preparation method thereof and application thereof in light nitrogen fixation
CN110064425B (en) Bismuth oxycarbonate-bismuth oxychloride heterojunction and synthesis method thereof
CN108063249B (en) Preparation method of high-purity copper nitride nanocrystal
CN110817810B (en) Flexible nano material growing with bismuth, trinickel and diselenide and preparation method thereof
CN113046765B (en) Foamed nickel loaded Fe2O3@Ni3S2Preparation method of OER (organic electroluminescent) electrocatalyst with composite structure
CN113716601A (en) Hydroxyl cadmium chloride crystal and preparation method thereof
CN110014160B (en) Ellipsoidal Cu2O/Cu/Cu3Preparation method of N composite powder
CN110480002B (en) Synthesis method of silver nanowire with high length-diameter ratio
CN101481132A (en) CuO square column-like nanostructure and preparation thereof
CN115010171A (en) Green preparation method of nano lanthanum zirconate powder
CN111424312B (en) Preparation method of 3C-silicon carbide two-dimensional single crystal nanosheet
CN113604877B (en) Method for preparing polycrystalline SnSe by solvothermal method
CN110729469B (en) High-purity high-crystallinity MoO2Preparation method of (1)
CN113979439B (en) Si 5 C 3 Micro-nano material and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant