CN110808133B - Photo-thermal and electric-thermal mixed type direct-current anti-icing composite insulator - Google Patents
Photo-thermal and electric-thermal mixed type direct-current anti-icing composite insulator Download PDFInfo
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- CN110808133B CN110808133B CN201810885446.5A CN201810885446A CN110808133B CN 110808133 B CN110808133 B CN 110808133B CN 201810885446 A CN201810885446 A CN 201810885446A CN 110808133 B CN110808133 B CN 110808133B
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- 239000012212 insulator Substances 0.000 title claims abstract description 30
- 239000002131 composite material Substances 0.000 title claims abstract description 22
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 69
- 239000011248 coating agent Substances 0.000 claims abstract description 49
- 238000000576 coating method Methods 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 40
- 239000010439 graphite Substances 0.000 claims abstract description 40
- 239000004945 silicone rubber Substances 0.000 claims abstract description 29
- 239000000843 powder Substances 0.000 claims abstract description 25
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims description 19
- 238000010073 coating (rubber) Methods 0.000 claims description 8
- 238000004898 kneading Methods 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 230000032683 aging Effects 0.000 abstract description 2
- 230000002209 hydrophobic effect Effects 0.000 abstract description 2
- 230000003111 delayed effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/02—Suspension insulators; Strain insulators
- H01B17/04—Chains; Multiple chains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/38—Fittings, e.g. caps; Fastenings therefor
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Abstract
The composite insulator includes hardware fitting end, voltage-sharing device, core rod, protecting sleeve and umbrella skirt, and the umbrella skirt includes two or more of silicone rubber layer, smooth and hot layer and semiconductor layer. The umbrella skirt consists of a silicone rubber layer, a photothermal layer and a semiconductor layer, wherein the photothermal layer is arranged on the upper surface and the middle part of the photothermal layer is the silicone rubber layer, the semiconductor layer is arranged on the lower surface, or the photothermal layer and the silicone rubber layer are arranged, the photothermal layer is arranged on the upper surface, and the silicone rubber layer is arranged on the lower layer. The light and heat layer is prepared by mixing inorganic metal oxide with silicon rubber or RTV coating; the semiconductor layer is prepared by mixing conductive graphite micro powder and silicon rubber or RTV coating; the unique hydrophobic mobility of the silicone rubber layer can be transferred to the surface of the photo-thermal layer, so that the insulator has excellent anti-pollution flashover capability, the field intensity of the high-voltage end of the insulator is reduced, and the aging of the insulator is delayed; in winter ice and snow weather, the photothermal layer and the semiconductor layer effectively melt ice and prevent ice through the on-off effect during ice coating, and ice flash accidents are prevented.
Description
Technical Field
The invention relates to the field of power equipment in the power transmission and transformation industry, in particular to a basic electrical element insulator.
Background
With the continuous expansion of energy development, electric energy transmission and the scale of electric power systems, direct current transmission has the characteristic of saving energy loss and develops rapidly. In addition, the direct current transmission technology is an effective means in the aspects of developing and utilizing energy sources in remote areas, developing new energy sources, new power generation modes and the like. The long-distance energy transmission inevitably passes through areas with high altitude, accumulated snow and heavy icing, the terrain and ground conditions and the climate conditions of the areas are complex, and the probability of encountering ice on the line is very high, so that the electrical performance of the composite insulator is reduced, ice flashover is easy to occur, and the safe operation of a power transmission line is seriously damaged.
Disclosure of Invention
The invention aims to provide a photo-thermal and electric-thermal mixed type direct-current anti-icing composite insulator which can melt ice and prevent ice by absorbing solar energy and heat of leakage current caused by ice coating, so that the safe operation of a power system is ensured.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: the device comprises a hardware fitting end, a voltage-sharing device, a core rod, a sheath and an umbrella skirt, wherein the umbrella skirt comprises two or more than two of a silicon rubber layer, a light and heat layer and a semiconductor layer.
The umbrella skirt consists of a silicone rubber layer, a photothermal layer and a semiconductor layer, wherein the photothermal layer is arranged on the upper surface, the silicone rubber layer is arranged in the middle, and the semiconductor layer is arranged on the lower surface.
The umbrella skirt consists of a photothermal layer and a silicone rubber layer, wherein the photothermal layer is arranged on the upper surface, and the silicone rubber layer is arranged on the lower layer.
The umbrella skirt consists of a semiconductor layer and a silicon rubber layer, wherein the upper layer is the silicon rubber layer, and the lower surface is the semiconductor layer.
The photo-thermal layer of the umbrella skirt is made of inorganic metal oxide (FeMnCuO)4Particle size of 0.6-1.8 μm) and silicon rubber, wherein the inorganic metal oxide silicon rubber coating is prepared by mixing the organic metal oxide with the silicon rubber, the mass fraction of the organic metal oxide is 25-40%, the mass fraction of the silicon rubber is 60-75%, and the comprehensive light absorption efficiency is more than or equal to 95%; or from inorganic metal oxides (FeMnCuO)4Particle size of 0.6 to 1.8 μm) and RThe inorganic metal oxide RTV coating is prepared by mixing a TV coating, the mass fraction of the inorganic metal oxide is 25-40%, the mass fraction of the RTV coating is 60-75%, and the comprehensive light absorption efficiency is more than or equal to 95%.
The inorganic metal oxide RTV coating is prepared from FeMnCuO4Mixing the micro powder (with the particle size of 0.6-1.8 mu m) and the RTV coating for 2 hours at 120 ℃ in a kneading machine, and then grinding and dispersing to obtain the coating;
the inorganic metal oxide silicon rubber coating is prepared from FeMnCuO4The micro powder (with the particle size of 0.6-1.8 mu m) and the silicon rubber are mixed for 2 hours at 120 ℃ in a kneader and then are ground and dispersed to prepare the silicon rubber.
The semiconductor layer of the umbrella skirt is coated by a semiconductor graphite silicon rubber coating prepared by mixing conductive graphite micro powder (with the particle size of 0.6-1.8 mu m) and silicon rubber, wherein the conductive graphite micro powder accounts for 20-25% by mass, the silicon rubber accounts for 75-80% by mass, and the volume resistivity is 1.0 multiplied by 103Ω·m～1.0×106Omega.m; or a semiconductor graphite RTV coating prepared by mixing conductive graphite micropowder (with the particle size of 0.6-1.8 mu m) and RTV coating, wherein the conductive graphite micropowder accounts for 15-25% by mass, the RTV coating accounts for 75-85% by mass, and the volume resistivity is 1.0 multiplied by 103Ω·m～1.0×106Ω·m。
The semiconductor graphite RTV coating is prepared by mixing conductive graphite micro powder (with the particle size of 0.6-1.8 mu m) and RTV coating for 2 hours at 120 ℃ in a kneader, and then grinding and dispersing;
the semiconductor graphite silicone rubber coating is prepared by mixing conductive graphite micro powder (with the particle size of 0.6-1.8 mu m) and silicone rubber in a kneader at 120 ℃ for 2 hours, and then grinding and dispersing.
The sheath is made of silicon rubber or a composite material prepared by mixing graphite micro powder with the particle size of 0.6-1.8 mu m and silicon rubber compound for 2 hours at the temperature of 150 ℃ in a kneader, wherein the mass fraction of the graphite micro powder is 10-15%, the mass fraction of the silicon rubber is 85-90%, and the volume resistivity is 1.0 multiplied by 106Ω·m～1.0×1010Ω·m。
The sheath can be coated with a sheath semiconductor layerThe body layer is prepared by mixing graphite micropowder and silicon rubber, and has a volume resistivity of 1.0 × 106Ω·m～1.0×1010Ω·m。
The composite insulator of the invention is the same as the common composite insulator in normal operation, and the photo-thermal layer on the upper surface of the umbrella skirt can absorb most of the energy of the wave band of sunlight, thus improving the surface temperature of the umbrella skirt and playing the role of anti-icing. When ice is not prevented from being formed due to the action of only light and heat in the ice and snow weather, the ice on the upper surface of the umbrella skirt reduces the surface resistance of the umbrella skirt, the semiconductor layer is communicated, the resistance of a high-voltage end and a low-voltage end is reduced, the leakage current is increased, and the electric heating effect is generated to heat and melt ice. After the ice and snow are melted, the upper surface of the umbrella skirt is gradually dried, the resistance is increased, and the insulator is restored to a normal running state.
The volume resistivity of all umbrella skirt semiconductor layers is the same.
The volume resistivity of the umbrella skirt semiconductor layers is different.
The invention has the beneficial effects that: the unique hydrophobic mobility of the silicone rubber layer can migrate to the surface of the photothermal layer, the photothermal and electrothermal mixed type direct-current anti-icing composite insulator has excellent anti-pollution flashover capability as the same as a common composite insulator in normal operation, and can play a role in voltage sharing, reduce the field intensity of the high-voltage end of the insulator, delay the aging of the insulator and improve the reliability of the insulator by matching different resistivities of the umbrella skirt semiconductor layer at the high-voltage end. In winter ice and snow weather, the photothermal layer and the semiconductor layer effectively melt and prevent ice through the on-off effect when ice is coated, so that ice flashover accidents are prevented, and the safe operation of a power system is ensured.
Drawings
FIG. 1 is a schematic structural view of example 1 of the present invention;
FIG. 2 is a schematic structural diagram of example 2 of the present invention;
FIG. 3 is a schematic structural diagram according to embodiment 3 of the present invention;
FIG. 4 is a schematic structural diagram according to embodiment 4 of the present invention;
fig. 5 is an assembly schematic of the present invention.
In the figure, 1, a hardware fitting end; 2. a pressure equalizing device; 3. a core rod; 4. a sheath; 4-1, an intermediate sheath; 5. a smooth thermal layer; 6. a silicone rubber layer; 7. a semiconductor layer; 8. an umbrella skirt.
Detailed Description
While specific embodiments of the present invention have been described in detail with reference to the accompanying drawings, it will be understood by those skilled in the art that the embodiments described herein are merely exemplary of the invention, which may be embodied in various forms and modified and equivalents thereof, without departing from the spirit and scope of the invention, and it is intended that all such modifications and equivalents thereof be covered by the claims.
Example 1
In FIG. 1, the photothermal layer 5 used is composed of 30 parts of FeMnCuO4The inorganic metal oxide RTV coating is prepared by mixing micro powder (with the particle size of 0.6-1.8 mu m) and 70 parts of common RTV coating for 2 hours at 120 ℃ in a kneading machine, and then grinding and dispersing the mixture. The semiconductor graphite RTV coating is prepared by mixing 22 parts of conductive graphite micro powder (with the particle size of 0.6-1.8 mu m) and 78 parts of common RTV coating in a kneader at 120 ℃ for 2 hours, and then grinding and dispersing. The structure is shown in figure 1, the insulator is composed of 130mm diameter large umbrella and 100mm diameter small umbrella alternately, the distance between the umbrellas is 40mm, wherein the upper surface smooth and thermal layer 5 is coated with inorganic metal oxide (FeMnCuO)4) RTV coating, coating semiconductor graphite RTV coating on the lower surface of the umbrella skirt and the sheath 4 to form a semiconductor layer 7, wherein the volume resistivity of the semiconductor RTV coating is 1.36 multiplied by 105Omega.m, the middle layer of the umbrella skirt is a silicone rubber layer 6.
Example 2
In FIG. 2, the inorganic metal oxide RTV coating is prepared from 25 parts of FeMnCuO4The micro powder (with the particle size of 0.6-1.8 mu m) and 75 parts of common RTV coating are mixed for 2 hours at 120 ℃ in a kneader and then are ground and dispersed to prepare the semiconductor graphite RTV coating, and the semiconductor graphite RTV coating is prepared by 21 parts of conductive graphite micro powder (with the particle size of 0.6-1.8 mu m) and 79 parts of common RTV coating are mixed for 2 hours at 120 ℃ in the kneader and then are ground and dispersed; the structure is shown in figure 2, the insulator is composed of large umbrellas with the diameter of 130mm and small umbrellas with the diameter of 100mm alternately, the distance between the umbrellas is 38mm, wherein the upper surface silicon rubber layer 6 and the sheath 4 are made of common silicon rubber, the lower surface of the umbrella skirt and the sheath are coated with semiconductor graphite RTV coating as the semiconductor layer 7, and the semi-part isThe volume resistivity of the conductor RTV coating is 1.58 multiplied by 105Ω·
Example 3
In FIG. 3, the semiconductor graphite RTV coating is prepared by kneading 21 parts of conductive graphite micropowder (with the particle size of 0.6-1.8 μm) and 79 parts of common RTV coating for 2 hours at 120 ℃ in a kneader and then grinding and dispersing, the semiconductor graphite silicone rubber is prepared by kneading 13 parts of conductive graphite micropowder (with the particle size of 0.6-1.8 μm) and 87 parts of common silicone rubber for 2 hours at 150 ℃ in a kneader, and the middle part sheath 4.1 is a composite material prepared by kneading 12 parts of graphite powder (with the particle size of 0.6-1.8 μm) and 88 parts of silicone rubber for 2 hours at 150 ℃ in the kneader; the structure is shown in figure 3, the insulator is composed of large umbrellas with the diameter of 130mm and small umbrellas with the diameter of 100mm alternately, the distance between the umbrellas is 52mm, wherein the upper surface silicon rubber layer 6 and the two end sheaths 4 are made of common silicon rubber, the lower surface semiconductor layer 7 is coated with semiconductor graphite RTV coating, the volume resistivity of the semiconductor RTV coating is 1.58 multiplied by 105Omega.m, the middle sheath 4.1 is sheath semiconductor silicon rubber prepared by mixing graphite powder and silicon rubber, and the volume resistivity is 3.67 multiplied by 108Ω·m。
Example 4
In fig. 4, the composite insulator silicon rubber umbrella skirt is composed of a silicon rubber layer 6, a photo-thermal layer 5 and a semiconductor layer 7, wherein the photo-thermal layer 5 is arranged on the upper surface, the silicon rubber layer 6 is arranged in the middle, and the semiconductor layer 7 is arranged on the lower surface. And 4, a sheath.
In fig. 5, the photo-thermal and electric-thermal mixed type dc anti-icing composite insulator of the present invention includes a hardware end 1, a hardware end 2, a voltage-sharing device 3, a mandrel 4, a sheath 8, and a composite insulator silicone rubber shed, wherein 8 includes a silicone rubber layer 6, a photo-thermal layer 5, and a semiconductor layer 7.
Claims (7)
1. A photo-thermal and electric-thermal mixed type direct-current anti-icing composite insulator comprises a hardware fitting end (1), a voltage-sharing device (2), a core rod (3), a sheath (4) and an umbrella skirt (8), and is characterized in that the umbrella skirt (8) comprises two or more of a silicon rubber layer (6), a photo-thermal layer (5) and a semiconductor layer (7);
the photothermal layer (5) is made of inorganic metal oxide FeMnCuO4The micro powder is mixed with silicon rubber to prepare inorganic metal oxide silicon rubber coating, wherein the inorganic metal oxide FeMnCuO is used as the organic metal oxide4The mass fraction of the micro powder is 25-40%, the mass fraction of the silicon rubber is 60-75%, and the comprehensive light absorption efficiency is more than or equal to 95%, or
Is prepared by coating inorganic metal oxide RTV coating prepared by mixing inorganic metal oxide with RTV coating, wherein the inorganic metal oxide FeMnCuO4The mass fraction of the micro powder is 25-40%, the mass fraction of the RTV coating is 60-75%, the comprehensive light absorption efficiency is more than or equal to 95%, and the inorganic metal oxide FeMnCuO4The particle size of the micro powder is 0.6-1.8 mu m;
the semiconductor layer (7) is formed by coating a semiconductor graphite silicon rubber coating prepared by mixing conductive graphite micro powder and silicon rubber, wherein the mass fraction of the conductive graphite micro powder is 20-25%, and the mass fraction of the silicon rubber is 75-80%; or
The conductive graphite coating is formed by coating a semiconductor graphite RTV coating prepared by mixing conductive graphite micropowder and RTV coating, wherein the mass fraction of the conductive graphite micropowder is 15-25%, the mass fraction of the RTV coating is 75-85%, and the volume resistivity is 1.0 multiplied by 103Ω·m～1.0×106Omega.m, and the particle size of the conductive graphite micro powder is 0.6-1.8 mu m.
2. The photo-thermal and electro-thermal hybrid direct-current anti-icing composite insulator according to claim 1, wherein: the umbrella skirt (8) is composed of a silicone rubber layer (6), a photo-thermal layer (5) and a semiconductor layer (7), the photo-thermal layer (5) is arranged on the upper surface, the silicone rubber layer (6) is arranged in the middle, and the semiconductor layer (7) is arranged on the lower surface.
3. The photo-thermal and electro-thermal hybrid direct-current anti-icing composite insulator according to claim 1, wherein: the umbrella skirt (8) consists of a smooth and hot layer (5) and a silicone rubber layer (6), wherein the smooth and hot layer (5) is arranged on the upper surface, and the silicone rubber layer (6) is arranged on the lower layer.
4. The photo-thermal and electro-thermal hybrid direct-current anti-icing composite insulator according to claim 1, wherein: the umbrella skirt (8) is composed of a semiconductor layer (7) and a silicon rubber layer (6), the upper layer is the silicon rubber layer (6), and the lower surface is the semiconductor layer (7).
5. The hybrid photothermal and electrothermal DC anti-icing composite insulator according to claim 1, wherein the inorganic metal oxide RTV coating is made of FeMnCuO4The micro powder and the RTV coating are mixed for 2 hours at 120 ℃ in a kneading machine and then are ground and dispersed to prepare the coating;
the inorganic metal oxide silicon rubber coating is made of FeMnCuO4The micro powder and the silicon rubber are mixed for 2 hours at 120 ℃ in a kneader and then are grinded and dispersed to obtain the silicon rubber.
6. The photo-thermal and electric-thermal mixed type direct-current anti-icing composite insulator as claimed in claim 1, wherein the semiconductor graphite RTV coating is prepared by mixing conductive graphite micropowder and RTV coating for 2 hours at 120 ℃ in a kneader and then grinding and dispersing;
the semiconductor graphite silicone rubber coating is prepared by mixing conductive graphite micro powder and silicone rubber in a kneader at 120 ℃ for 2 hours, and then grinding and dispersing.
7. The photothermal and electrothermal mixed type direct-current anti-icing composite insulator according to claim 1, wherein the sheath (4) is a silicone rubber or a composite material prepared by mixing a graphite fine powder having a particle size of 0.6 to 1.8 μm with a silicone rubber compound at 150 ℃ for 2 hours in a kneader, the graphite fine powder having a mass fraction of 10 to 15%, the silicone rubber having a mass fraction of 85 to 90%, and a volume resistivity of 1.0 x 106Ω·m～1.0×1010Ω·m。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810885446.5A CN110808133B (en) | 2018-08-06 | 2018-08-06 | Photo-thermal and electric-thermal mixed type direct-current anti-icing composite insulator |
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|---|---|---|---|
| CN201810885446.5A CN110808133B (en) | 2018-08-06 | 2018-08-06 | Photo-thermal and electric-thermal mixed type direct-current anti-icing composite insulator |
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| CN110808133A CN110808133A (en) | 2020-02-18 |
| CN110808133B true CN110808133B (en) | 2021-07-30 |
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| CN100412996C (en) * | 2006-01-17 | 2008-08-20 | 中国南方电网有限责任公司电网技术研究中心 | +/-800kV ultra-high voltage DC synthesized insulator |
| CN201549283U (en) * | 2009-12-03 | 2010-08-11 | 湖北省电力公司襄樊供电公司 | Ice-melting composite insulator |
| CN102241886B (en) * | 2010-05-11 | 2015-07-22 | 国家纳米科学中心 | Material having ice covering proof function, and preparation method and application thereof |
| CN101901649B (en) * | 2010-07-14 | 2014-04-16 | 蔡彭博 | High voltage power transmission transparent insulator |
| CN103021597A (en) * | 2012-11-16 | 2013-04-03 | 国家电网公司 | Preparation method of insulator with hydrophobic layer |
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