CN110808079A - Novel method for delaying abrasion and prolonging service life of solid state disk - Google Patents
Novel method for delaying abrasion and prolonging service life of solid state disk Download PDFInfo
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- CN110808079A CN110808079A CN201910956586.1A CN201910956586A CN110808079A CN 110808079 A CN110808079 A CN 110808079A CN 201910956586 A CN201910956586 A CN 201910956586A CN 110808079 A CN110808079 A CN 110808079A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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Abstract
The invention discloses a novel method for delaying abrasion and prolonging the service life of a solid state disk, which comprises the following steps: the main controller reads original data from a storage medium, counts the Cell voltage distribution reading condition, reads the P/E period number of a Flash block, and adjusts a reading judgment threshold value; the main controller receives data written by the host, the data are cached in the DDR cache, and then the data are subjected to heat treatment; the main controller receives a data reading instruction of the host, reads original data from the storage unit, performs two steps of decompression and decryption on the original data after ECC error correction processing, and finally sends the data to the host; meanwhile, the read original data statistics reads the Cell voltage distribution, reads the P/E cycle number of the Flash block, integrates the voltage distribution and the P/E cycle factor, adjusts the read judgment threshold value, and feeds back the threshold value information to the main controller. The invention can delay the increase of the error rate caused by abrasion to a certain extent, thereby prolonging the service life of the solid state disk.
Description
Technical Field
The invention belongs to the technical field of solid state disks, and particularly relates to a novel method for delaying abrasion and prolonging the service life of a solid state disk.
Background
The solid state disk is composed of a control unit and a storage unit. The storage unit adopts a Flash storage medium, and the control unit comprises a main controller, a DDR memory and an SAS interface.
The Flash storage medium in the solid state disk is worn when used, and the wear degree determines the service life of the hard disk, because the higher the wear degree of the Flash storage medium is, the bit error rate can be greatly improved, the service life of the solid state disk can be seriously influenced, and even the hard disk is scrapped.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a novel method for delaying abrasion and prolonging the service life of a solid state disk, which is reasonable in design and solves the problem that the service life of the solid state disk is greatly reduced due to abrasion of a Flash storage medium.
In order to achieve the purpose, the invention provides the following technical scheme:
a novel method for delaying abrasion and prolonging service life of a solid state disk is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the steps that a main controller reads original data from a storage medium, counts the Cell voltage distribution reading condition, reads the P/E period number of a Flash block, comprehensively counts two factors of the voltage distribution and the P/E period, and adjusts a reading judgment threshold value;
the main controller receives data written by the host, the data is cached in the DDR cache, and then the data is thermally processed, wherein the preprocessing method comprises the following steps: a. b, a lossless compression algorithm, a symmetric encryption algorithm, wherein 0/1 distribution in the data is adjusted to be close to 1: 1; then, performing ECC (error correction code) and error correction preprocessing on the data, writing the preprocessed data into a storage unit (NANDFLASH), and recording a Flash block and a P/E period;
the method comprises the steps that a main controller receives a data reading command of a host, reads original data from a storage unit (NANDFlash), carries out two steps of decompression and decryption on the original data after ECC (error correction code) error correction processing, and finally sends the data to the host; meanwhile, the read original data statistics reads the Cell voltage distribution, reads the P/E cycle number of the Flash block, integrates the voltage distribution and the P/E cycle factor, adjusts the read judgment threshold value, and feeds back the threshold value information to the main controller.
Due to the adoption of the technical scheme, compared with the prior art, the invention has the beneficial effects that:
the main controller of the solid state disk provided by the invention is used for counting the error rate of original data when reading data. The stored data can be counted at any time without writing in a special sequence through preprocessing, and then the main controller adjusts the judgment threshold value of the Flash through the analysis of the error rate, so that the error rate is reduced, the increase of the error rate caused by abrasion can be delayed to a certain extent, and the service life of the solid state disk is prolonged.
The invention is further illustrated with reference to the figures and examples.
Drawings
FIG. 1 is a schematic diagram of a main controller according to an embodiment of the present invention;
FIG. 2 is a flowchart illustrating the operation of the main controller when idle according to an embodiment of the present invention;
FIG. 3 is a flow chart illustrating the operation of the host controller in writing according to one embodiment of the present invention;
FIG. 4 is a flow chart illustrating the operation of the host controller in reading according to one embodiment of the present invention;
fig. 5 is a schematic diagram illustrating a relationship between a lifetime of a solid state disk and a decision threshold in an embodiment of the present invention.
Detailed Description
Examples
As shown in fig. 1-4, a new method for prolonging the service life of a solid state disk by delaying abrasion,
the method comprises the following steps:
the main controller reads original data from a storage medium, counts the Cell voltage distribution, reads the P/E period number of the Flash block, and then comprehensively counts two factors of the voltage distribution and the P/E period to adjust a reading judgment threshold value.
The main controller receives data written by the host, the data is cached in the DDR cache, and then the data is thermally processed, wherein the preprocessing method comprises the following steps: a. b, a lossless compression algorithm, a symmetric encryption algorithm, wherein 0/1 distribution in the data is adjusted to be close to 1: 1; and then, performing ECC (error correction code) and error correction preprocessing on the data, writing the preprocessed data into a storage unit (NANDflash), and recording a Flash block and a P/E period.
The method comprises the steps that a main controller receives a data reading command of a host, reads original data from a storage unit (NANDFlash), carries out two steps of decompression and decryption on the original data after ECC (error correction code) error correction processing, and finally sends the data to the host; meanwhile, the read original data statistics reads the Cell voltage distribution, reads the P/E cycle number of the Flash block, integrates the voltage distribution and the P/E cycle factor, adjusts the read judgment threshold value, and feeds back the threshold value information to the main controller.
The solid state disk adopts NANDFlash as a storage medium. The Cell itself is a MOS transistor of Floating Gate (FG) structure, and its operation principle is: the storage or release of data is achieved by changing the threshold voltage of the memory cell by injecting or releasing charge into the FG. Program "0" applies a voltage to inject charges into FG and Erase through a control gate, and then applies a reverse voltage to pull out the charges from FG through a tunnel effect (hereinafter referred to as FNT), which may generate random electrical signal noise due to trapping or leakage of electrons by a single oxide layer near the surface of the substrate, and this noise may finally cause a shift of the threshold voltage.
As the process advances, the half-pitch (HalfPitch) between FGs has become smaller and smaller, rapidly shrinking from 360 nm in 1995 to 16 nm today, and this process of increasingly compressing CMOS as the process advances has affected the reliability of NANDFlash in many ways, for example, the amount of charge stored in FG decreases, there are about 100 electrons in FG at 34 nm, the charge loss tolerance is about 10 electrons, and at 19 nm there are only about 10 electrons in FG, so that each electron loss has a significant effect on the threshold voltage. The short distance also makes it easier to influence the memory cells, and the FG causes a time-dependent dielectric breakdown (TDDB) or dielectric aging under the action of voltage and electric field, thereby causing Bit errors.
Erase and Program operations also cause the oxide layer to collect charge, which affects the threshold voltage of the cell, and when the charge is off the well, the threshold shifts and Bit inverts.
The main controller of the solid state disk preprocesses data written by a host, wherein optional methods of preprocessing comprise a lossless compression algorithm, an AES (advanced encryption standard) and other symmetric encryption algorithms, and 0/1 distribution in the data is adjusted to be close to 1: 1. And writing the preprocessed data into a storage unit (NAND Flash). And when the data is read out, the data is processed by using the inverse algorithm of the preprocessing and returned to the host. And when the main controller of the solid state disk reads data, counting the error rate of the original data. Because the stored data is preprocessed, statistics can be carried out at any time without writing a special sequence. The main controller adjusts the decision threshold of Flash through the analysis of the error rate, so as to reduce the error rate, as shown in fig. 5, which is a schematic diagram of a relationship between the service life of the solid state disk and the decision threshold, and it is drawn that the programming voltage of the Cell will deviate with the increase of the programming cycle (P/E cycle), so that the error rate is increased. When the error rate rises to an uncorrectable range, the whole Block can not be used any more. . At different service life stages of the solid state disk, programming voltage distribution of Flash is different, and a reading judgment threshold value is dynamically adjusted according to the change, so that the error rate can be reduced. The service life of the solid state disk is often ended due to the fact that the error rate is improved due to the abrasion degree of Flash, and the method introduced by the text can delay the increase of the error rate caused by abrasion to a certain extent, so that the service life of the solid state disk is prolonged.
The main controller of the solid state disk provided by the invention is used for counting the error rate of original data when reading data. The stored data can be counted at any time without writing in a special sequence through preprocessing, and then the main controller adjusts the judgment threshold value of the Flash through the analysis of the error rate, so that the error rate is reduced, the increase of the error rate caused by abrasion can be delayed to a certain extent, and the service life of the solid state disk is prolonged.
The protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (1)
1. A novel method for delaying abrasion and prolonging service life of a solid state disk is characterized by comprising the following steps:
the method comprises the following steps:
the method comprises the steps that a main controller reads original data from a storage medium, counts the Cell voltage distribution reading condition, reads the P/E period number of a Flash block, comprehensively counts two factors of the voltage distribution and the P/E period, and adjusts a reading judgment threshold value;
the main controller receives data written by the host, the data is cached in the DDR cache, and then the data is thermally processed, wherein the preprocessing method comprises the following steps: a. b, a lossless compression algorithm, a symmetric encryption algorithm, wherein 0/1 distribution in the data is adjusted to be close to 1: 1; then, performing ECC (error correction code) and error correction preprocessing on the data, writing the preprocessed data into a storage unit (NAND Flash), and recording a Flash block and a P/E (Peer/Peer) period;
the main controller receives a data reading instruction of a host, reads original data from a storage unit (NAND Flash), performs two steps of decompression and decryption on the original data after ECC error correction processing, and finally sends the data to the host; meanwhile, the read original data statistics reads the Cell voltage distribution, reads the P/E cycle number of the Flash block, integrates the voltage distribution and the P/E cycle factor, adjusts the read judgment threshold value, and feeds back the threshold value information to the main controller.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117762350A (en) * | 2024-01-18 | 2024-03-26 | 四川和恩泰半导体有限公司 | Solid state disk data reading method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985415A (en) * | 2013-02-10 | 2014-08-13 | Lsi公司 | Retention-drift-history-based non-volatile memory read threshold optimization |
| CN107094370A (en) * | 2012-05-04 | 2017-08-25 | 希捷科技有限公司 | 01 management of balances of solid-state hard disk controller |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107094370A (en) * | 2012-05-04 | 2017-08-25 | 希捷科技有限公司 | 01 management of balances of solid-state hard disk controller |
| CN103985415A (en) * | 2013-02-10 | 2014-08-13 | Lsi公司 | Retention-drift-history-based non-volatile memory read threshold optimization |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117762350A (en) * | 2024-01-18 | 2024-03-26 | 四川和恩泰半导体有限公司 | Solid state disk data reading method |
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Application publication date: 20200218 |