CN110802503A - Grinding device - Google Patents

Grinding device Download PDF

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Publication number
CN110802503A
CN110802503A CN201911076035.2A CN201911076035A CN110802503A CN 110802503 A CN110802503 A CN 110802503A CN 201911076035 A CN201911076035 A CN 201911076035A CN 110802503 A CN110802503 A CN 110802503A
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CN
China
Prior art keywords
silicon wafer
glossiness
surface plate
fixed plate
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911076035.2A
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Chinese (zh)
Inventor
崔世勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Original Assignee
Xian Eswin Silicon Wafer Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Eswin Silicon Wafer Technology Co Ltd filed Critical Xian Eswin Silicon Wafer Technology Co Ltd
Priority to CN201911076035.2A priority Critical patent/CN110802503A/en
Publication of CN110802503A publication Critical patent/CN110802503A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant

Abstract

The present invention provides a grinding device, comprising: the upper fixed disc can rotate; the upper grinding pad is arranged on the upper fixed disc to grind the surface of one side of the silicon wafer; the lower fixed disc can rotate; the lower grinding pad is arranged on the lower fixed disc to grind the surface of the other side of the silicon wafer; and at least one of the upper fixed plate and the lower fixed plate is provided with a mounting hole, a through hole is formed in the position, corresponding to the mounting hole, on the upper grinding pad or the lower grinding pad, and the glossiness detector is arranged at the position of the mounting hole and is opposite to the through hole so as to detect the glossiness of the surface of the silicon wafer.

Description

Grinding device
Technical Field
The invention relates to the field of silicon wafer processing, in particular to a grinding device.
Background
In the double-side grinding process, the surface of the silicon wafer is ground by the grinding pad, and the surface roughness of the silicon wafer is deteriorated along with the increase of the service time of the grinding pad, so that the surface of the silicon wafer is difficult to meet the requirements. After the double-sided grinding is finished and the silicon wafer is unloaded, the roughness of the silicon wafer needs to be monitored, DSP (double-sided grinding) is carried out after DSP (digital signal processor) is finished, and then an operator carries out selective inspection on the silicon wafer and then carries out mirror surface glossiness measurement. The double-side grinding process is the last process for controlling the back quality of the silicon wafer in the silicon wafer processing process, so that whether the silicon wafer meets the mirror surface glossiness specification of a customer needs to be monitored after the silicon wafer is processed, the corresponding silicon wafer is scrapped due to damage caused by contact when the glossiness is measured, and products between the DSP and the DSP cleaning process need to be reworked when the glossiness exceeds the mirror surface glossiness specification, so that the production loss is caused, and the production efficiency is reduced.
Disclosure of Invention
In view of this, the invention provides a grinding device, which is used for solving the problems that the glossiness of the surface of a silicon wafer is difficult to monitor in the grinding process of the silicon wafer, the surface quality of the silicon wafer is difficult to meet the requirements, the number of reworked products is large, and the production efficiency is low.
In order to solve the technical problems, the invention adopts the following technical scheme:
according to the grinding device of the embodiment of the invention, the grinding device comprises:
the upper fixed disc can rotate;
the upper grinding pad is arranged on the upper fixed disc to grind the surface of one side of the silicon wafer;
the lower fixed disc can rotate;
the lower grinding pad is arranged on the lower fixed disc to grind the surface of the other side of the silicon wafer;
and at least one of the upper fixed plate and the lower fixed plate is provided with a mounting hole, a through hole is formed in the position, corresponding to the mounting hole, on the upper grinding pad or the lower grinding pad, and the glossiness detector is arranged at the position of the mounting hole and is opposite to the through hole so as to detect the glossiness of the surface of the silicon wafer.
The polishing device comprises an upper fixed disc, an upper grinding pad, a lower fixed disc, a plurality of through holes and a glossiness detector, wherein the upper fixed disc is provided with at least one mounting hole, the through holes are respectively arranged on the upper grinding pad and the positions, corresponding to the mounting holes, on the upper fixed disc, and the glossiness detector is respectively arranged on each mounting hole on the upper fixed disc.
The lower fixed disc is provided with at least one mounting hole, the through holes are respectively formed in the positions, corresponding to the mounting holes in the lower fixed disc, on the lower grinding pad, and the glossiness detector is respectively arranged in each mounting hole in the lower fixed disc.
Wherein, still include:
the controller is used for controlling the upper fixed disc and/or the lower fixed disc to rotate;
the glossiness detector on the upper fixed plate detects glossiness of one side surface of the silicon wafer and generates a corresponding first glossiness signal;
the glossiness detector on the lower fixed plate detects the glossiness of the other side surface of the silicon wafer and generates a corresponding second glossiness signal;
the controller receives the first glossiness signal to control the upper fixed plate to rotate, and/or the controller receives the second glossiness signal to control the lower fixed plate to rotate.
Wherein, the grinder device still includes:
the input end of the comparator inputs the first glossiness signal and the second glossiness signal, and the output end of the comparator outputs a comparison signal;
and the controller receives the comparison signal to control the rotating speed of the upper fixed disc and/or the lower fixed disc.
Wherein at least one of the upper fixed plate and the lower fixed plate is provided with a temperature sensor to detect the temperature on the upper fixed plate and/or the lower fixed plate.
At least one gap sensor is arranged on at least one of the upper fixed plate and the lower fixed plate to detect the distance between the upper fixed plate and the lower fixed plate.
The upper fixed disc is provided with a plurality of gap sensors, and at least two gap sensors are arranged at intervals along the radial direction of the upper fixed disc;
or a plurality of gap sensors are arranged on the lower fixed disc, and at least two gap sensors are arranged at intervals along the radial direction of the lower fixed disc.
Wherein, glossiness detector includes:
an emitter for projecting light onto the surface of the silicon wafer;
the receiver is used for receiving the light reflected by the surface of the silicon chip so as to detect the glossiness of the surface of the silicon chip according to the received reflected light.
Wherein, still include:
and the spraying mechanism is used for spraying the grinding fluid on the silicon wafer.
Wherein, still include:
the silicon wafer carrier comprises a carrier, wherein a bearing area for bearing a silicon wafer is arranged on the carrier, the bearing area penetrates through the carrier in the thickness direction, and the surfaces of two sides of the silicon wafer are exposed when the silicon wafer is placed on the bearing area;
the outer pin ring and the inner pin ring are coaxially arranged, at least one carrier is arranged between the outer pin ring and the inner pin ring, and the outer pin ring and the inner pin ring can rotate to drive the carrier to rotate.
The technical scheme of the invention has the following beneficial effects:
according to the grinding device, at least one of the upper fixed plate and the lower fixed plate is provided with the mounting hole, the glossiness detector is arranged at the position of the mounting hole and is opposite to the corresponding through hole so as to detect the glossiness of the surface of the silicon wafer, so that the glossiness of the surface of the silicon wafer can be monitored in real time in the grinding process, grinding is stopped until the surface of the silicon wafer meets the glossiness requirement, the grinding quality can be ensured, damage to the silicon wafer caused by subsequent detection of the glossiness of the silicon wafer is avoided, scrap of the silicon wafer is reduced, production loss is reduced, rework is reduced, and the production efficiency is improved.
Drawings
FIG. 1 is a schematic top view of an upper platen of a polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a side view of an upper surface plate of the polishing apparatus according to the embodiment of the present invention;
FIG. 3 is a schematic view of the upper platen and the upper polishing pad of the polishing apparatus according to the embodiment of the present invention;
FIG. 4 is another side view of the upper surface plate of the polishing apparatus according to the embodiment of the present invention;
FIG. 5 is another schematic view of the upper platen and the upper polishing pad of the polishing apparatus according to the embodiment of the present invention;
FIG. 6 is a schematic view of the position of a temperature sensor and a gap sensor in the polishing apparatus according to the embodiment of the present invention;
FIG. 7 is a schematic diagram of a temperature change detected by the temperature sensor on the upper surface plate;
FIG. 8 is a schematic view showing a change in the gap detected by the gap sensor on the upper surface plate;
FIG. 9 is a schematic view of a gloss detector in the polishing apparatus according to an embodiment of the present invention;
FIG. 10 is a schematic view of a carrier engaged with an outer pin ring in an abrading apparatus according to an embodiment of the invention;
FIG. 11 is a schematic view of the polishing apparatus according to the embodiment of the present invention, showing the lower platen and the lower polishing pad being engaged with each other.
Reference numerals
An upper surface plate 10;
an upper polishing pad 20;
a lower surface plate 30;
a lower polishing pad 40;
a glossiness detector 50; a transmitter 51; a receiver 52; a silicon wafer 53;
a temperature sensor 60; a gap sensor 61;
a carrier 70; an outer pin ring 71; an inner pin ring 72; a load bearing zone 73.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
First, a grinding apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 to 11, the polishing apparatus according to the embodiment of the present invention includes an upper surface plate 10, an upper polishing pad 20, a lower surface plate 30, a lower polishing pad 40, and a glossiness detector 50.
Specifically, the upper surface plate 10 is rotatable, the upper polishing pad 20 is disposed on the upper surface plate 10 to polish one side surface of a silicon wafer, the lower surface plate 30 is rotatable, the lower polishing pad 40 is disposed on the lower surface plate 30 to polish the other side surface of the silicon wafer, at least one of the upper surface plate 10 and the lower surface plate 30 has a mounting hole, a through hole is disposed at a position corresponding to the mounting hole on the upper polishing pad 20 or the lower polishing pad 40, and the glossiness detector 50 is disposed at the position of the mounting hole and opposite to the corresponding through hole to detect the glossiness of the surface of the silicon wafer.
That is, the polishing apparatus mainly comprises an upper fixed plate 10, an upper polishing pad 20, a lower fixed plate 30, a lower polishing pad 40 and a glossiness detecting instrument 50, wherein the upper polishing pad 20 is arranged on the upper fixed plate 10, the upper fixed plate 10 can rotate, and the upper polishing pad 20 is driven to rotate by the rotation of the upper fixed plate 10 so as to polish one side surface of a silicon wafer; the lower polishing pad 40 is disposed on the lower fixed plate 30, the lower fixed plate 30 is rotatable, and the lower polishing pad 40 is driven by the rotation of the lower fixed plate 30 to rotate so as to polish the other side surface of the silicon wafer. At least one of the upper platen 10 and the lower platen 30 has a mounting hole, for example, a mounting hole is provided on the upper platen 10 or the lower platen 30, a through hole is provided at a position corresponding to the mounting hole on the upper polishing pad 20 or the lower polishing pad 40, the glossiness detector 50 is provided at the mounting hole, the glossiness detector 50 is opposite to the corresponding through hole, and the glossiness detector 50 detects the glossiness of the surface of the silicon wafer through the through hole, for example, a mounting hole is provided on the upper platen 10, a through hole is provided at a position corresponding to the mounting hole on the upper polishing pad 20, the glossiness detector 50 is provided at the mounting hole, and the glossiness detector 50 detects the glossiness of the upper surface of the silicon wafer through the through hole on the upper polishing pad 20.
Therefore, according to the grinding device provided by the invention, the glossiness detector is arranged on at least one of the upper fixed plate and the lower fixed plate to detect the glossiness of the surface of the silicon wafer, so that the glossiness of the surface of the silicon wafer can be monitored in real time in the grinding process, grinding is stopped until the surface of the silicon wafer meets the glossiness requirement, the grinding quality can be ensured, the silicon wafer damage caused by subsequent detection of the glossiness of the silicon wafer is avoided, the rejection of the silicon wafer is reduced, the production loss is reduced, the rework is reduced, and the production efficiency is improved.
In an embodiment of the present invention, at least one mounting hole may be disposed on the upper fixed plate 10, through holes are disposed at positions on the upper polishing pad 20 corresponding to the mounting holes on the upper fixed plate 10, and a glossiness detector 50 is disposed at a position on each mounting hole on the upper fixed plate 10, for example, a mounting hole may be disposed on the upper fixed plate 10, a through hole is disposed at a position on the upper polishing pad 20 corresponding to the mounting hole on the upper fixed plate 10, and a glossiness detector 50 is disposed at a position on the mounting hole on the upper fixed plate 10 to detect glossiness of the surface of the silicon wafer, so that the silicon wafer can monitor glossiness of the surface of the silicon wafer during polishing.
In some embodiments of the present invention, at least one mounting hole may be disposed on the lower fixed plate 30, through holes may be disposed at positions on the lower polishing pad 40 corresponding to the mounting holes on the lower fixed plate 30, and a gloss detector 50 is disposed at each mounting hole on the lower fixed plate 30, for example, two mounting holes may be disposed on the lower fixed plate 30, a through hole may be disposed at a position on the lower polishing pad 40 corresponding to the mounting hole on the lower fixed plate 30, and a gloss detector 50 is disposed at each mounting hole on the lower fixed plate 30, so that the gloss of the surface of the silicon wafer is monitored by the gloss detector 50.
According to some embodiments of the present invention, the polishing apparatus further includes a controller, the controller is configured to control the upper surface plate 10 and/or the lower surface plate 30 to rotate, the gloss detector 50 on the upper surface plate 10 detects the gloss of one side surface of the silicon wafer and generates a corresponding first gloss signal, the first gloss signal can indicate the corresponding gloss, the gloss detector 50 on the lower surface plate 30 detects the gloss of the other side surface of the silicon wafer and generates a corresponding second gloss signal, the second gloss signal can also indicate the corresponding gloss, the controller receives the first gloss signal to control the upper surface plate 10 to rotate, and/or the controller receives the second gloss signal to control the lower surface plate 30 to rotate, for example, when the first gloss signal and the first gloss signal meet a signal threshold, the controller receives the first gloss signal to control the upper surface plate 10 to stop rotating, and/or the controller receives the second glossiness signal to control the lower fixed disc 30 to stop rotating; when the first glossiness signal and the first glossiness signal do not accord with the signal threshold, the controller receives the first glossiness signal to control the upper fixed plate 10 to continue rotating, and/or the controller receives the second glossiness signal to control the lower fixed plate 30 to continue rotating, so that the glossiness of the surface of the silicon wafer meets the requirement, and the grinding quality is guaranteed.
According to other embodiments of the present invention, the grinding apparatus may further include a comparator, the input terminal inputs the first gloss signal and the second gloss signal, the output terminal outputs a comparison signal, and the controller receives the comparison signal to control the rotation speed of the upper fixed plate 10 and/or the lower fixed plate 30, for example, the controller receives the comparison signal to control the stop rotation or the increase of the rotation speed of the upper fixed plate 10 and/or the lower fixed plate 30. Optionally, when the glossiness indicated by the first glossiness signal input by the input terminal is greater than the glossiness indicated by the second glossiness signal, the output terminal outputs a comparison signal, and the controller, receiving the comparison signal, may control the rotation speed of the lower fixed disk 30 to increase, and may control the rotation speed of the lower fixed disk 30 to be greater than the rotation speed of the upper fixed disk 10; when the glossiness indicated by the first glossiness signal input from the input terminal is less than the glossiness indicated by the second glossiness signal, the output terminal outputs a comparison signal, and the controller receives the comparison signal to control the rotation speed of the upper fixed disk 10 to increase, and to control the rotation speed of the upper fixed disk 10 to be greater than the rotation speed of the lower fixed disk 30.
In the embodiment of the present invention, at least one of the upper fixed plate 10 and the lower fixed plate 30 may be provided with a temperature sensor 60 to detect a temperature on the upper fixed plate 10 and/or the lower fixed plate 30, for example, the upper fixed plate 10 may be provided with a temperature sensor 60 to detect a temperature on the upper fixed plate 10, the upper fixed plate 10 may be easily deformed due to an increase in temperature, which may cause unevenness during grinding, and the temperature on the upper fixed plate 10 may be monitored by the temperature sensor 60, which may prevent the upper fixed plate 10 from being unevenly ground due to an excessively high temperature. Three temperature sensors 60c, 60d and 60e may be disposed on the upper surface plate 10 to detect the temperature variation of the upper surface plate 10 with time, as shown in fig. 8, the temperature variation of the upper surface plate 10 detected by the temperature sensor 60c is shown by a curve c, the temperature variation of the upper surface plate 10 detected by the temperature sensor 60d is shown by a curve d, and the temperature variation of the upper surface plate 10 detected by the temperature sensor 60e is shown by a curve e, so that the temperature sensor 60 can monitor the temperature of the upper surface plate 10, and the uneven grinding of the upper surface plate 10 caused by the over-high temperature can be avoided. When the local temperature on the last price fixing 10 that goes up temperature sensor 60 on the price fixing 10 detected surpassed the temperature threshold value, can be for going up price fixing 10 cooling through the cooling structure, for example, the cooling structure can be including the air jet system that can spray low temperature inert gas (for example nitrogen gas) on the price fixing 10 that makes progress, air jet system includes gas pitcher and trachea, tracheal one end and gas pitcher intercommunication, tracheal other end can spray low temperature inert gas (for example nitrogen gas) to the last price fixing 10 in order to go up the price fixing 10 cooling, avoid going up price fixing 10 and take place deformation.
In some embodiments of the present invention, at least one gap sensor 61 is disposed on at least one of the upper fixed plate 10 and the lower fixed plate 30 to detect the distance between the upper fixed plate 10 and the lower fixed plate 30, for example, one gap sensor 61 may be disposed on the upper fixed plate 10 or the lower fixed plate 30 to detect the distance between the upper fixed plate 10 and the lower fixed plate 30, two gap sensors 61 may be disposed on the upper fixed plate 10 and the lower fixed plate 30 to detect the distance between the upper fixed plate 10 and the lower fixed plate 30, respectively, and the gap sensor 61 may be an eddy current sensor, and the gap sensor 61 may detect the distance between the upper fixed plate 10 and the lower fixed plate 30 in real time. The glossiness detector 50 is fabricated and mounted in the same manner as the temperature sensor 61 and the gap sensor 62, the upper surface plate 10 may be mounted at a position 200mm away from the outer edge of the upper surface plate, the lower surface plate 30 may be mounted at a position 200mm away from the outer edge of the lower surface plate 30 so as to detect the center portion of the silicon wafer, the glossiness detector 50, the temperature sensor 61, and the gap sensor 62 may be connected to a display, respectively, and the detection values of the glossiness detector 50, the temperature sensor 61, and the gap sensor 62 may be displayed on the display.
A plurality of gap sensors 61 may be disposed on the upper fixed plate 10, and at least two gap sensors 61 are spaced apart in a radial direction of the upper fixed plate 10; or, a plurality of gap sensors 61 are disposed on the lower fixed plate 30, at least two gap sensors 61 are disposed at intervals along the radial direction of the upper fixed plate 10, for example, one gap sensor 61 is disposed at each of the outer diameter position and the inner diameter position of the upper fixed plate 10, and a change in the distance between the outer diameter position and the inner diameter position between the upper fixed plate 10 and the lower fixed plate 30 is detected, and the upper fixed plate 10 and the lower fixed plate 30 maintain a certain distance so that the surface quality of the processed silicon wafer is better, and the form of the upper fixed plate 10 or the lower fixed plate 30 is conveniently adjusted according to the temperature distribution and the difference in the distance between the upper fixed plate 10 and the lower fixed plate 30 by monitoring the temperature of the fixed plate and the distance between the upper fixed plate and the lower fixed plate 30, so. For example, as shown in fig. 6, two gap sensors 61a and 61b may be provided on the upper surface plate 10 to detect a change in the distance between the upper surface plate 10 and the lower surface plate 30 with time, a change in the distance between the inner diameter positions of the upper surface plate 10 and the lower surface plate 30 detected by the gap sensor 61a is shown by a curve a in fig. 7, a change in the distance between the outer diameter positions of the upper surface plate 10 and the lower surface plate 30 detected by the gap sensor 61b is shown by a curve b in fig. 7, and the upper surface plate 10 and the lower surface plate 30 maintain a certain distance by detecting a change in the distance between the outer diameter positions and the inner diameter positions of the upper surface plate 10 and the lower surface plate 30, so that the surface quality of the processed silicon wafer is better. In an embodiment of the present invention, the glossiness detector 50 may include a transmitter 51 and a receiver 52, where the transmitter 51 may be configured to project light onto the surface of the silicon wafer 53, an incident angle of the light projected onto the surface of the silicon wafer 53 by the transmitter 51 may be reasonably selected according to actual needs, for example, 20 degrees may be selected to more accurately detect the glossiness of the surface of the silicon wafer, and the receiver 52 may be configured to receive light reflected by the surface of the silicon wafer 53, to detect the glossiness of the surface of the silicon wafer according to the received reflected light, and for example, the receiver 52 may obtain the glossiness of the surface of the silicon wafer according to the intensity, the reflection angle, and the like of the received reflected light. In practice, the upper surface plate 10 and the lower surface plate 30 may have the same or similar structure, and the positions of the gloss level detector 50, the temperature sensor 61, and the gap sensor 62 on the lower surface plate 30 may be referred to the upper surface plate 10.
After the silicon wafer is processed, the position of the upper fixed plate 10 or the lower fixed plate 30 can be adjusted, the glossiness of the surface of the silicon wafer is detected through the glossiness detector 50, the silicon wafer can be cleaned through the cleaning mechanism after grinding is completed, after the cleaning process is completed, glossiness detection is performed on the silicon wafer for about 1-2 seconds after each product is processed, the silicon wafer can be dried through the drying mechanism after cleaning, the glossiness of the surface of the silicon wafer is detected, loss of sampling inspection samples is reduced, workload of operators is reduced, reworking can be reduced, and productivity of equipment is improved.
In some embodiments of the invention, the grinding device may further include a spraying mechanism, and the grinding fluid may be sprayed onto the silicon wafer by the spraying mechanism, so as to facilitate better grinding of the silicon wafer.
The grinding device can also comprise a cleaning mechanism and a drying mechanism, cleaning liquid can be sprayed on the silicon wafer through the cleaning mechanism to clean the silicon wafer, and the drying mechanism can dry the silicon wafer. The drying mechanism may include a gas supply device and a gas supply pipe, the gas supply pipe being in communication with the gas supply device, supplying a gas, such as an inert gas, through the gas supply pipe, spraying a gas through the gas supply pipe to the surface of the silicon wafer to dry the silicon wafer, and supplying an inert gas containing oxygen or ozone through the gas supply device, the oxygen or ozone being capable of oxidizing the surface of the silicon wafer to form an oxide layer, and the oxide layer being capable of protecting the surface of the silicon wafer from contamination or damage.
In some embodiments of the present invention, as shown in fig. 10, the grinding apparatus may further include a carrier 70, an outer pin ring 71, and an inner pin ring 72, wherein the carrier 70 may be provided with a carrying region 73 for carrying the silicon wafer, the carrying region 73 penetrates in a thickness direction of the carrier 70, both side surfaces of the silicon wafer are exposed when the silicon wafer is placed in the carrying region 73, the outer pin ring 71 and the inner pin ring 72 are coaxially disposed, at least one carrier 70 is disposed between the outer pin ring 71 and the inner pin ring 72, and the outer pin ring 71 and the inner pin ring 72 are rotatable to drive the carrier 70 to rotate.
The upper fixed plate 10 and the lower fixed plate 30 may be disposed opposite to each other, and the outer pin ring 71 and the inner pin ring 72 may be disposed between the upper fixed plate 10 and the lower fixed plate 30, and one side surface of the silicon wafer is ground by the upper grinding pad 20 on the upper fixed plate 10, and the other side surface of the silicon wafer is ground by the lower grinding pad 40 on the lower fixed plate 30. In the using process, the carrier 70 is adjusted to the initial position, at which the through holes on the upper polishing pad 20 or the lower polishing pad 40 can be aligned with the surface of the silicon wafer, and then polishing is started, and when polishing is stopped for a while, the carrier 70 can be rotated to the initial position by the outer pin ring 71 and the inner pin ring 72, so that the through holes on the upper polishing pad 20 or the lower polishing pad 40 can be aligned with the surface of the silicon wafer, and the glossiness of the surface of the silicon wafer is detected by the glossiness detecting apparatus 50.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (11)

1. A grinding apparatus, comprising:
the upper fixed disc can rotate;
the upper grinding pad is arranged on the upper fixed disc to grind the surface of one side of the silicon wafer;
the lower fixed disc can rotate;
the lower grinding pad is arranged on the lower fixed disc to grind the surface of the other side of the silicon wafer;
and at least one of the upper fixed plate and the lower fixed plate is provided with a mounting hole, a through hole is formed in the position, corresponding to the mounting hole, on the upper grinding pad or the lower grinding pad, and the glossiness detector is arranged at the position of the mounting hole and is opposite to the through hole so as to detect the glossiness of the surface of the silicon wafer.
2. The polishing apparatus as recited in claim 1, wherein said upper surface plate is provided with at least one of said mounting holes, said through holes are respectively provided at positions on said upper polishing pad corresponding to said mounting holes on said upper surface plate, and each of said gloss detectors is provided at a position on said upper surface plate corresponding to each of said mounting holes.
3. The polishing apparatus as claimed in claim 1, wherein the lower surface plate is provided with at least one mounting hole, the through holes are respectively provided on the lower polishing pad at positions corresponding to the mounting holes on the lower surface plate, and the gloss detector is respectively provided on each of the mounting holes on the lower surface plate.
4. The abrading apparatus of claim 3, further comprising:
the controller is used for controlling the upper fixed disc and/or the lower fixed disc to rotate;
the glossiness detector on the upper fixed plate detects glossiness of one side surface of the silicon wafer and generates a corresponding first glossiness signal;
the glossiness detector on the lower fixed plate detects the glossiness of the other side surface of the silicon wafer and generates a corresponding second glossiness signal;
the controller receives the first glossiness signal to control the upper fixed plate to rotate, and/or the controller receives the second glossiness signal to control the lower fixed plate to rotate.
5. The abrading apparatus of claim 4, further comprising:
the input end of the comparator inputs the first glossiness signal and the second glossiness signal, and the output end of the comparator outputs a comparison signal;
and the controller receives the comparison signal to control the rotating speed of the upper fixed disc and/or the lower fixed disc.
6. The lapping apparatus of claim 1, wherein at least one of the upper surface plate and the lower surface plate is provided with a temperature sensor to detect a temperature on the upper surface plate and/or the lower surface plate.
7. The lapping apparatus of claim 1, wherein at least one gap sensor is provided on at least one of the upper surface plate and the lower surface plate to detect a spacing between the upper surface plate and the lower surface plate.
8. The grinding apparatus as claimed in claim 7, wherein a plurality of gap sensors are provided on said upper surface plate, at least two of said gap sensors being provided at intervals in a radial direction of said upper surface plate;
or a plurality of gap sensors are arranged on the lower fixed disc, and at least two gap sensors are arranged at intervals along the radial direction of the lower fixed disc.
9. The abrading apparatus of claim 1, wherein the gloss detector comprises:
an emitter for projecting light onto the surface of the silicon wafer;
the receiver is used for receiving the light reflected by the surface of the silicon chip so as to detect the glossiness of the surface of the silicon chip according to the received reflected light.
10. The abrading apparatus of claim 1, further comprising:
and the spraying mechanism is used for spraying the grinding fluid on the silicon wafer.
11. The abrading apparatus of claim 1, further comprising:
the silicon wafer carrier comprises a carrier, wherein a bearing area for bearing a silicon wafer is arranged on the carrier, the bearing area penetrates through the carrier in the thickness direction, and the surfaces of two sides of the silicon wafer are exposed when the silicon wafer is placed on the bearing area;
the outer pin ring and the inner pin ring are coaxially arranged, at least one carrier is arranged between the outer pin ring and the inner pin ring, and the outer pin ring and the inner pin ring can rotate to drive the carrier to rotate.
CN201911076035.2A 2019-11-06 2019-11-06 Grinding device Pending CN110802503A (en)

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Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2000271857A (en) * 1999-03-25 2000-10-03 Super Silicon Kenkyusho:Kk Double side machining method and device for large diameter wafer
CN1441713A (en) * 2000-05-31 2003-09-10 三菱住友硅晶株式会社 Method of polishing semiconductor wafer by using double-sided polisher
US20060040589A1 (en) * 2004-08-20 2006-02-23 Ulrich Ising Double sided polishing machine
CN101722447A (en) * 2008-10-22 2010-06-09 硅电子股份公司 Device for the double-sided processing of flat workpieces and method for the simultaneous double-sided material removal processing of a plurality of semiconductor wafers
CN101870085A (en) * 2007-03-19 2010-10-27 硅电子股份公司 Method for simultaneous grinding of a plurality of semiconductor wafers
CN101957186A (en) * 2009-07-15 2011-01-26 中芯国际集成电路制造(上海)有限公司 Method for detecting surface evenness of wafer and chemically mechanical polishing method
CN206825190U (en) * 2017-01-11 2018-01-02 K.C.科技股份有限公司 Chemical mechanical polishing device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000271857A (en) * 1999-03-25 2000-10-03 Super Silicon Kenkyusho:Kk Double side machining method and device for large diameter wafer
CN1441713A (en) * 2000-05-31 2003-09-10 三菱住友硅晶株式会社 Method of polishing semiconductor wafer by using double-sided polisher
US20060040589A1 (en) * 2004-08-20 2006-02-23 Ulrich Ising Double sided polishing machine
CN101870085A (en) * 2007-03-19 2010-10-27 硅电子股份公司 Method for simultaneous grinding of a plurality of semiconductor wafers
CN101722447A (en) * 2008-10-22 2010-06-09 硅电子股份公司 Device for the double-sided processing of flat workpieces and method for the simultaneous double-sided material removal processing of a plurality of semiconductor wafers
CN101957186A (en) * 2009-07-15 2011-01-26 中芯国际集成电路制造(上海)有限公司 Method for detecting surface evenness of wafer and chemically mechanical polishing method
CN206825190U (en) * 2017-01-11 2018-01-02 K.C.科技股份有限公司 Chemical mechanical polishing device

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