CN110794652A - Photoetching machine system and photoetching method - Google Patents

Photoetching machine system and photoetching method Download PDF

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Publication number
CN110794652A
CN110794652A CN201911117978.5A CN201911117978A CN110794652A CN 110794652 A CN110794652 A CN 110794652A CN 201911117978 A CN201911117978 A CN 201911117978A CN 110794652 A CN110794652 A CN 110794652A
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CN
China
Prior art keywords
light source
photoetching
module
control module
lithography
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Pending
Application number
CN201911117978.5A
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Chinese (zh)
Inventor
赵宇航
李铭
袁伟
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Shanghai IC R&D Center Co Ltd
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Shanghai IC R&D Center Co Ltd
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Priority to CN201911117978.5A priority Critical patent/CN110794652A/en
Publication of CN110794652A publication Critical patent/CN110794652A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Abstract

The invention discloses a photoetching machine system and a photoetching method, wherein the photoetching machine system comprises a central light source module, a plurality of photoetching machine hosts, a light source transmission module and a light source control module, the central light source module is connected with the light source control module through the light source transmission module, the light source control module is respectively connected with the photoetching machine hosts through the light source transmission module, the light source control module separates light sources with wave bands required by target photoetching machine hosts from light sources provided by the central light source module and transmits the light sources to the target photoetching machine hosts, and exposure energy required by a photoetching process is simultaneously provided for the target photoetching machine hosts. The invention transmits the light source generated by one central light source module to two or more photoetching machine hosts through the light source transmission module and the light source control module, thereby providing the exposure energy required by the photoetching process of each photoetching machine host, obviously improving the light source use efficiency of the photoetching machine hosts and reducing the system introduction cost and the maintenance cost of the photoetching machine hosts.

Description

Photoetching machine system and photoetching method
Technical Field
The invention relates to the technical field of integrated circuit equipment manufacturing, in particular to a photoetching machine system and a photoetching method.
Background
As the design and fabrication processes of integrated circuits become more complex, the integrated circuit industry faces more and more challenges, wherein one of the challenges facing the lithography process is higher equipment and process costs, and the next generation lithography platform extreme ultraviolet lithography machine (EUV) light source power cannot meet the large scale volume production requirements.
The current architecture of the lithography machine system is that each lithography machine host corresponds to an individual light source system. As for the optical bench lithography machine, there are 193nm argon fluoride excimer laser, 248nm krypton fluoride excimer laser, 365nm mercury lamp light source, etc. which are commonly used as exposure light sources in the industry. For a more advanced extreme ultraviolet lithography machine, a light source is extreme ultraviolet rays with the wavelength of about 13.5nm generated by a laser plasma source, then the extreme ultraviolet rays are optically focused to form a light beam, and the light beam is reflected to the surface of a silicon wafer through a reflection mask plate to complete extreme ultraviolet exposure.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a conventional method in which each lithography machine is configured with an independent light source system. As shown in fig. 1, the individually configured light source system 21 is connected to each lithography machine host 23 through the light source transmission module 22, and the individually configured light source system 21 provides an exposure light source to the lithography machine host 23 for performing the lithography process. In the drawings, a, B, C, D, E, etc. represent different host computers of the lithography machine.
The semiconductor industry is constantly striving to reduce the cost of using and maintaining the lithography machine and to improve the production efficiency of the lithography machine. The existing lithography machine system architecture with each lithography machine corresponding to an independent light source system causes toggle for the goals of reducing cost and improving efficiency in the industry.
How to break through the existing platform architecture, continuously reduce the cost of the photoetching equipment and the technology, and realize the obvious breakthrough of the extreme ultraviolet photoetching light source power and the production efficiency is the problem of the research in the semiconductor industry.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned drawbacks of the prior art, and provides a lithography system and a lithography method.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a lithography machine system, comprising: the system comprises a central light source module, a plurality of photoetching machines, a light source transmission module and a light source control module; the central light source module is connected with the light source control module through the light source transmission module, the light source control module is respectively connected with the photoetching hosts through the light source transmission module, the light source control module separates light sources with wave bands required by the photoetching hosts from the light source provided by the central light source module, the light source control module separates light beams from a single beam into a plurality of beams, and the beams are respectively transmitted to the photoetching hosts to provide exposure energy required by photoetching technology for the photoetching hosts.
Further, the host machine of the photoetching machine comprises an I-ray photoetching machine, a deep ultraviolet photoetching machine or an extreme ultraviolet photoetching machine.
Further, the light source provided by the central light source module comprises a single-waveband light source, a continuous waveband light source or a partial waveband light source.
Further, the light source control module comprises a light beam separation device for separating the light source of the target wavelength band required by the host computer of the lithography machine, and the light beam separation device is also used for separating the light beam from a single light beam into a plurality of light beams; the light source control module is also used for independently controlling the intensity and the height of the energy and the power after the light beam is separated.
Further, the wavelength band required by the main machine process of the photoetching machine comprises 13.5nm extreme ultraviolet wavelength, 193nm deep ultraviolet wavelength, 248nm deep ultraviolet wavelength or 365nm wavelength.
Further, the beam splitting apparatus is provided with a filter and a beam splitter.
Further, the central light source module includes a solid laser, a gas laser, a liquid laser, a semiconductor laser, a free electron laser, or a synchrotron radiation light source.
Furthermore, the central light source module meets the exposure energy requirements of the photoetching process of two or more than two photoetching machines.
Further, the light source transmission module adopts gas, vacuum or optical fiber as a light source transmission medium.
A photoetching method using the photoetching machine system comprises the following steps:
exciting, generating and outputting a light source by using a central light source module;
the light source generated by the central light source module enters the light source control module through the light source transmission module;
according to the light source wavelength and exposure energy requirement required by the target photoetching machine host machine for photoetching process, filtering, beam separation and beam homogenization are carried out on the light source entering the light source control module, and the intensity and the height of the energy and the power of the separated light beam are controlled by the light source control module;
transmitting the separated and controlled multiple paths of light sources to the photoetching machine host corresponding to each light source through the light source transmission module;
and finishing the exposure process of the silicon wafer placed in the photoetching machine host by using the light source transmitted to the target photoetching machine host.
According to the technical scheme, the light source generated by one central light source module is transmitted to two or more photoetching machine hosts through the light source transmission module and the light source control module, so that exposure energy required by the photoetching process of each photoetching machine host can be provided; compared with the mode that each photoetching machine is matched with an independent laser light source system, the invention can obviously improve the light source use efficiency of the photoetching machine and reduce the introduction cost and the maintenance cost of the photoetching machine system; meanwhile, devices such as a synchrotron radiation light source and the like can be used as a central light source system to provide exposure energy for multiple extreme ultraviolet lithography machines to meet the requirements of lithography processes, and the problems of insufficient exposure energy and low yield of the extreme ultraviolet lithography machines are effectively solved.
Drawings
Fig. 1 is a schematic structural diagram of a conventional manner in which each lithography machine is provided with an independent light source system.
FIG. 2 is a schematic diagram of a system of a lithography machine according to a preferred embodiment of the present invention.
Fig. 3 is a schematic diagram of a beam splitter structure in the light source control module.
Fig. 21, a light source system configured separately; 22. a light source transmission module; 23. a photoetching machine host; 31. a beam splitter; 32. an incident light source; 33. reflected light after beam splitting; 34. split beam penetrating light; 41. a central light source system; 42. a light source control module; 43. a light source transmission module; 44. and (4) a photoetching machine host.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, reference is made to fig. 2, and fig. 2 is a schematic structural diagram of a lithography system according to a preferred embodiment of the present invention. As shown in FIG. 2, a lithography system of the present invention comprises: a central light source module, a plurality of lithography machine hosts 44, a light source transmission module 43, and a light source control module 42. The central light source module may adopt a central light source system 41, and the light source control module 42 may adopt a light source control device 42.
Please refer to fig. 2. The central light source system 41 is connected to the light source control module 42 through the light source transmission module 43, and the light source control module 42 is connected to each of the lithography machine hosts 44 through the light source transmission module 43. The light source control module 42 separates the light source with the wavelength band required by the target lithography machine host 44 from the light source provided by the central light source system 41, and transmits the light source to the target lithography machine host (for example, A, B and C)44, and provides the exposure energy required by the lithography process to each target lithography machine host 44 at the same time.
The lithography machine host 44 may be an I-line lithography machine, a deep ultraviolet lithography machine, or an extreme ultraviolet lithography machine. The lithography host 44 may also be another type of lithography machine. The lithography host 44 can be, for example, the existing lithography host 23 shown in FIG. 1.
The central light source system 41 may be a single-band light source system, a continuous-band light source system, or a partial-band light source system, according to the wavelength of the light source provided by the central light source system.
Light source control module 42 may employ a beam splitting device 42. The central light source system 41 with continuous wave band and the central light source system 41 with partial wave band can separate the light source with the wave band required by the target lithography machine host 44 from the light source provided by the central light source system 41 by the light beam separation device and technology, and can separate the light beam from the single beam into a plurality of beams which are then respectively transmitted to the target lithography machine host 44.
Beam splitting devices and techniques may include optical components such as filters and beam splitters (beamsplitters).
Please refer to fig. 3. After the incident light source 32 passes through the beam splitter 31, a part of the light is reflected to become a split reflected light 33, and a part of the light is transmitted to become a split transmitted light 34.
The role of the light source control module 42 includes at least a beam splitting function for the light source output by the central light source system 41. In addition, the function of the light source control module 42 may also include functions of independently controlling the energy and power after the light beam is split.
The wavelength band of the process requirements of the target lithography host 44 may include 13.5nm euv wavelength, 193nm euv wavelength, 248nm euv wavelength, or 365nm wavelength, etc.
The central light source system 41 may include other light source systems such as a solid laser, a gas laser, a liquid laser, a semiconductor laser, a free electron laser, or a synchrotron radiation light source, depending on the physical state of the working substance.
Wherein, the output power of a single central light source system 41 is greater than the laser which is separately matched with the existing lithography machine, and the single central light source system 41 can meet the exposure energy requirement of more than or equal to two lithography machines 44.
The light source transmission medium of the light source transmission module 43 may be a gas, vacuum, or optical fiber medium. The light source transmission module 43 may employ an existing light source transmission module 22 such as that shown in fig. 1.
The central light source system 41 may be disposed near the lithography machine host 44, or disposed at a position far away from the lithography machine host 44, and transmitted to each target lithography machine host 44 through the light source transmission module 43.
EUV light sources can generally be realized with 3 technical solutions: a synchrotron radiation source, a discharge Plasma (DPP) EUV light source, a Laser Produced Plasma (LPP) EUV light source.
Currently, a free-standing light source, i.e., a laser-produced Plasma (LPP) EUV light source, is being developed and is being substantially put into mass production, and the power of the light source can only reach 250W at most. Due to the highly absorbing nature of EUV light (except vacuum, all substances absorb part of the incident EUV energy when reflecting a source in the EUV band), a source power of 250W is not sufficient to support the productivity requirements of 150 and even more than 200 slices per hour.
Synchrotron radiation light sources have many advantages, such as high collimation, high polarization, high purity, high brightness, narrow pulse, and accurate predictability, with the greatest advantage being high power. The large-scale synchrotron radiation light source device can generate EUV light exceeding 10kW, namely, the power of the large-scale synchrotron radiation light source device is 40 times that of a single LPP EUV light source (the power of different synchrotron radiation devices is different), so that the large-scale synchrotron radiation light source device can be used for a plurality of EUV exposure devices, and the productivity of the single EUV exposure device can be improved.
The invention also provides a photoetching machine framework for intensively supplying exposure energy of a plurality of photoetching machines by adopting the central light source system, and a photoetching method using the photoetching machine system can comprise the following steps:
a central light source system 41 is used to excite, generate and output a high intensity, high energy light source.
The light source generated by the central light source system 41 enters the light source control module 42 through the light source transmission module 43.
According to the light source wavelength and exposure energy requirement required by the target lithography machine host 44 for the lithography process, the light source entering the light source control module 42 is subjected to filtering, beam splitting, beam homogenization and other processing, and key indexes such as the intensity, the height and the like of the energy and the power of the split beam are controlled by the light source control module 42.
The separated and controlled multiple light sources are transmitted to the corresponding target lithography machine host 44 through the light source transmission module 43.
The light source transmitted to the main body 44 is controlled and processed accordingly to complete the exposure process for the silicon wafer set in the main body 44.
Finally, the implementation of the photoetching process for intensively supplying the exposure energy of the plurality of photoetching machines by adopting the central light source system is completed.
The above description is only a preferred embodiment of the present invention, and the embodiments are not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the present invention.

Claims (10)

1. A lithography system, comprising: the system comprises a central light source module, a plurality of photoetching machines, a light source transmission module and a light source control module; the central light source module is connected with the light source control module through the light source transmission module, the light source control module is respectively connected with the photoetching hosts through the light source transmission module, the light source control module separates light sources with wave bands required by the photoetching hosts from the light source provided by the central light source module, the light source control module separates light beams from a single beam into a plurality of beams, and the beams are respectively transmitted to the photoetching hosts to provide exposure energy required by photoetching technology for the photoetching hosts.
2. The lithography system as claimed in claim 1, wherein the lithography host comprises an I-line lithography machine, a deep ultraviolet lithography machine or an extreme ultraviolet lithography machine.
3. The lithography system of claim 1 wherein the light source provided by said central light source module comprises a single band light source, a continuous band light source, or a fractional band light source.
4. The system of claim 1, wherein the light source control module comprises a beam splitter for splitting the light source of a wavelength band desired by the host computer, and for splitting the light beam from a single beam into a plurality of beams; the light source control module is also used for independently controlling the intensity and the height of the energy and the power after the light beam is separated.
5. The lithography system of claim 4, wherein the wavelength band of the lithography host process requirements includes 13.5nm extreme ultraviolet wavelength, 193nm deep ultraviolet wavelength, 248nm deep ultraviolet wavelength, or 365nm wavelength.
6. Lithography system according to claim 4, wherein the beam splitting means is provided with a filter and a beam splitter.
7. The lithography system as recited in claim 1, wherein said central light source module comprises a solid state laser, a gas laser, a liquid laser, a semiconductor laser, a free electron laser, or a synchrotron radiation light source.
8. The system of claim 1, wherein the central light source module meets the exposure energy requirements of two or more photolithography processes of the host photolithography machine.
9. The lithography system as claimed in claim 1, wherein said light source transmission module employs gas, vacuum or optical fiber as light source transmission medium.
10. A lithography method using the lithography system of any one of claims 1 through 9, comprising the steps of:
exciting, generating and outputting a light source by using a central light source module;
the light source generated by the central light source module enters the light source control module through the light source transmission module;
according to the light source wavelength and exposure energy requirement required by the target photoetching machine host machine for photoetching process, filtering, beam separation and beam homogenization are carried out on the light source entering the light source control module, and the intensity and the height of the energy and the power of the separated light beam are controlled by the light source control module;
transmitting the separated and controlled multiple paths of light sources to the photoetching machine host corresponding to each light source through the light source transmission module;
and finishing the exposure process of the silicon wafer placed in the photoetching machine host by using the light source transmitted to the target photoetching machine host.
CN201911117978.5A 2019-11-15 2019-11-15 Photoetching machine system and photoetching method Pending CN110794652A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1987659A (en) * 2005-12-20 2007-06-27 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method using multiple exposure types
CN101324760A (en) * 2007-06-12 2008-12-17 大日本网目版制造株式会社 Depicting system, depicting apparatus and depicting method
CN105359038A (en) * 2013-06-18 2016-02-24 Asml荷兰有限公司 Lithographic method and system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1987659A (en) * 2005-12-20 2007-06-27 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method using multiple exposure types
CN101324760A (en) * 2007-06-12 2008-12-17 大日本网目版制造株式会社 Depicting system, depicting apparatus and depicting method
CN105359038A (en) * 2013-06-18 2016-02-24 Asml荷兰有限公司 Lithographic method and system

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