CN1107905A - Yttrium aluminium garnet crystal doped with neodymium, cerium and chromium - Google Patents

Yttrium aluminium garnet crystal doped with neodymium, cerium and chromium Download PDF

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Publication number
CN1107905A
CN1107905A CN 94119660 CN94119660A CN1107905A CN 1107905 A CN1107905 A CN 1107905A CN 94119660 CN94119660 CN 94119660 CN 94119660 A CN94119660 A CN 94119660A CN 1107905 A CN1107905 A CN 1107905A
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crystal
neodymium
cerium
chromium
yag
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CN 94119660
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CN1043581C (en
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桂尤喜
冀天来
王永国
杨浔
吴树成
李谊军
姚广涛
谷幻英
朱长水
张敏
牛令倩
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No11 Inst Ministry Of Eletronic Industry
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No11 Inst Ministry Of Eletronic Industry
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Abstract

The YAG laser crystal doped with Nd, Ce and Cr has chemical formula: Y3-x-y NdxCeyAl5-xCr2O12, where x,y and 2 reprensent respectively the atom numbers of Nd3+, Ce3+ and Cr3+ in crystal. The doping concentration ranges are respectively, 0.03<X<0.09, 3X10-5<Y<0.06, and 5X10-5<Z<0.10. The crystal has the advantages of high laser efficiency, low threshold, good ultraviolet radiation resistance and thermal stability and reliable laser output.

Description

Yttrium aluminium garnet crystal doped with neodymium, cerium and chromium
The present invention relates to the Yttrium aluminium garnet laser crystal material of a kind of neodymium-doped, cerium, chromium.
There are three aspect deficiencies in the yttrium aluminum garnet of present widely used neodymium-doped (hereinafter to be referred as Nd:YAG) laser crystal material, and the one, mix the active ions Nd in the crystal 3+Concentration is lower, within 0.6～1.2at% scope, works as Nd usually 3+When concentration was higher than 1.2at%, the crystal optics quality obviously reduced, laser output performance variation.Cause Nd 3+The reason that concentration is low is Nd 3+The replaced matrix of ratio of ionic radii in Y 3+Ionic radius big more, when mixing Nd 3+When concentration increased, lattice distortion was serious.Another problem is Nd in the crystal 3+It is low to absorb the optical pumping energy utilization ratio, i.e. flash lamp pumping efficient is low.Reason is Nd 3+Absorption be by 4f 3Be forced to electric dipole transition in the electronic configuration and produce, absorb little, the narrow bandwidth of oscillator strength.Another problem is that crystal is subjected to ultraviolet light irradiation to be easy to generate additional painted (colour center).The formation of colour center mainly is owing to have the electron type defective in the crystal.
Because the problems referred to above, Nd:YAG crystal laser efficient is not high, and especially efficient is lower under the flash lamp pumping situation of more low-yield input.And need the pumping of filter ultraviolet lamp, otherwise output energy (or power) descends or is unstable.
In order to improve Nd:YAG crystalline lasing efficiency, people have carried out number of research projects for a long time.Summarize to get up these work and mainly contain several aspects: the one, in Nd:YAG, mix ratio of ionic radii Nd 3+And Y 3+All little ion carries out volume compensation, reduces lattice distortion, to improve Nd in the crystal 3+Concentration.Nd:Lu:YAG(USP.3.632 for example, 521), this crystal since lasing efficiency improve not obvious, Lu simultaneously 2O 3Prices of raw and semifnished materials costliness, large usage quantity does not adopt during the historical facts or anecdotes border produces.Another kind of approach is to mix some can increase Nd in crystal 3+To the sensitized ions of optical pump energy utilization ratio, promptly utilize sensitized ions absorptive pumping energy efficient to be transferred to Nd 3+Nd:Cr:YAG(Z.J.Kiss.etal for example, Appl.phys Lett 5.200.1964) and Nd:Ce:YAG(J.Mares, Czech.J.Phys B 35,883,1985).Obtain high efficiency sensitized ions to Nd 3+Energy shift sensitized ions and active ions Nd 3+Concentration ratio must reach certain level, higher sensitized ions concentration promptly should be arranged.But because sensitized ions and replaced their ionic radius size of matrix intermediate ion often have than big-difference, cause higher concentration sensitized ions doped crystal growth difficulty, optical quality reduces, thereby in fact the lasing efficiency raising is not obvious, and brings some other unfavorable factors.
The objective of the invention is to improve Nd:YAG crystalline lasing efficiency, reduce laser threshold, improve anti-ultraviolet radiation ability and thermostability, keep the higher optical quality of crystal simultaneously.
Purpose of the present invention can reach by following measure, mixes neodymium, cerium, chromium ion in yttrium aluminum garnet simultaneously, and controls its concentration.
Yttrium aluminum garnet is a kind of mixed crystal oxide, and positively charged ion has three kinds of different symmetry positions in the lattice.Nd 3+And Ce 3+Mix the Y that substitutes the dodecahedron center in the crystal 3+, Cr 3+Substitute the Al at octahedra center 3+The yag crystal chemical formula of neodymium-doped, cerium, chromium can be represented by the formula:
X, y, z represent the Nd that mixes in the yag crystal respectively in the formula 3+, Ce 3+, Cr 3+Atomic fraction, its concentration range is respectively:
0.03＞X;0.03＜X≤0.09
3×10 -5≤Y≤0.06
5×10 -5≤Z≤0.10
Active ions Nd in the crystal 3+Produce 1.06 μ m( 4F 3/2→ 4I 11/2Transition) or 1.32 μ m( 4F 3/2→ 4I 13/2Transition) Laser emission.Ce 3+Be sensitized ions, it has strong and wide absorption band near 340nm and 445nm, produces strong broadband fluorescent emission in the 480-750nm scope.Nd 3+Near 445nm, do not have absorption, near 340nm, do not have strong the absorption, and at Ce 3+Strong absorption is arranged in the fluorescent emission wavelength region.So Ce 3+But Nd in the absorptive pumping light 3+Nonabsorbable part, and the energy that absorbs is transferred to Nd with radiation and nonradiative transfer mode 3+Cr 3+Play sensitization and volume compensation effect simultaneously, it 430 and 590nm near two strong and wide absorption bands are arranged, the fluorescent emission band is in 650～780nm scope.Cr 3+The absorptive pumping energy passes through metastable state 2E is transferred to Nd with radiationless and radiative transfer mode with the energy that absorbs 3+Upper laser level 4F 3/2Test shows, Cr 3+Also can reduce because of ratio of ionic radii Y 3+Big Nd 3+, Ce 3+Ion mixes the lattice mismatch that causes, effectively improves Nd in the crystal 3+, Ce 3+Concentration.Ce in addition 3+, Cr 3+Also can suppress the caused colour center formation of electronic defects in the lattice.
Adopt yttrium aluminum garnet (hereinafter to be referred as the Nd:Ce:Cr:YAG) crystal of neodymium-doped of the present invention, cerium, chromium, and suitable controlled doping concentration range, lasing efficiency is higher more than 30% than Nd:YAG, if under low pump energy initial conditions, output efficiency can exceed more than the Nd:YAG50%.Laser threshold is below 1.5J, crystal has good uvioresistant performance, adopt not filter that the UV flash lamps pumping can not occur that laser output reduces and unstable, crystal can be in wide temperature range steady operation, adopt no water-cooled or air-cooled condition long-play, laser output is reliable and stable.The Nd:Ce:Cr:YAG crystal is applicable to the Nd:YAG laser apparatus of variety of way running, is particularly suitable for using in miniaturization, no water-cooled, the highly reliable laser apparatus.
The present invention will further narrate in conjunction with following embodiment, mix Nd1.5at% in YAG, Cel * 10 -3～2.0at%, Crl * 10 -3～2.0at%, crystal with this kind concentration range of Czochralski grown processes φ 5 * 80mm laser bar, both ends of the surface are anti-reflection to 1.06 μ m, adopt and do not filter the ultraviolet xenon flash lamp pumping, the laser output efficiency improves more than 30% than the Nd:YAG of same size, if the pumping intake is lower, efficient is high more than 50%.

Claims (1)

1, a kind of Yttrium aluminium garnet laser crystal material has the Yttrium aluminium garnet laser crystal material of neodymium-doped, and it is characterized in that: be mixed with neodymium, cerium, chromium ion in this Yttrium aluminium garnet laser crystal material, its chemical formula is:
Wherein x, y, z represent the Nd that mixes in the crystalline material respectively 3+, Ce 3+, Cr 3+Atomic fraction, it mixes concentration range and is respectively:
0.03＞X；??0.03＜X≤0.09
3×10 -5≤Y≤0.06
5×10 -5≤Z≤0.10
CN 94119660 1994-12-16 1994-12-16 Yttrium aluminium garnet crystal doped with neodymium, cerium and chromium Expired - Lifetime CN1043581C (en)

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CN 94119660 CN1043581C (en) 1994-12-16 1994-12-16 Yttrium aluminium garnet crystal doped with neodymium, cerium and chromium

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Application Number Priority Date Filing Date Title
CN 94119660 CN1043581C (en) 1994-12-16 1994-12-16 Yttrium aluminium garnet crystal doped with neodymium, cerium and chromium

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CN1107905A true CN1107905A (en) 1995-09-06
CN1043581C CN1043581C (en) 1999-06-09

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100376508C (en) * 2005-04-30 2008-03-26 中国科学院理化技术研究所 Gel burning synthetic method for preparing reodymium doped gadolinium-gallium garnet nano powder
CN100434574C (en) * 2005-12-02 2008-11-19 西南技术物理研究所 Growth method for Yb and Cr4+ doped yttrium-aluminium garnet laser crystal
CN100447308C (en) * 2007-04-30 2008-12-31 山东大学 Calcium dopped Ta-Ga garnet crystal prepn process and use
CN100447309C (en) * 2007-04-30 2008-12-31 山东大学 Prepn process and use of calcium and lithium dopped Ta-Ga garnet crystal
CN102362399A (en) * 2009-03-23 2012-02-22 皇家飞利浦电子股份有限公司 Optically pumped solid-state laser and lighting system comprising said solid-state laser
CN103409805A (en) * 2013-08-13 2013-11-27 安徽环巢光电科技有限公司 Yttrium aluminum garnet crystal doped with neodymium, cerium and chromium, and preparation method thereof
CN103409806A (en) * 2013-08-13 2013-11-27 安徽环巢光电科技有限公司 Annealing method of neodymium, cerium and chromium doped yttrium aluminum garnet crystal
CN103833348A (en) * 2013-12-31 2014-06-04 北京雷生强式科技有限责任公司 Self-stimulated emission absorbing material and preparation method thereof
CN112919909A (en) * 2021-03-18 2021-06-08 苏州璋驰光电科技有限公司 Composite structure laser ceramic for Q-switched laser and preparation method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100376508C (en) * 2005-04-30 2008-03-26 中国科学院理化技术研究所 Gel burning synthetic method for preparing reodymium doped gadolinium-gallium garnet nano powder
CN100434574C (en) * 2005-12-02 2008-11-19 西南技术物理研究所 Growth method for Yb and Cr4+ doped yttrium-aluminium garnet laser crystal
CN100447308C (en) * 2007-04-30 2008-12-31 山东大学 Calcium dopped Ta-Ga garnet crystal prepn process and use
CN100447309C (en) * 2007-04-30 2008-12-31 山东大学 Prepn process and use of calcium and lithium dopped Ta-Ga garnet crystal
CN102362399A (en) * 2009-03-23 2012-02-22 皇家飞利浦电子股份有限公司 Optically pumped solid-state laser and lighting system comprising said solid-state laser
CN102362399B (en) * 2009-03-23 2014-05-07 皇家飞利浦电子股份有限公司 Optically pumped solid-state laser and lighting system comprising said solid-state laser
CN103409805A (en) * 2013-08-13 2013-11-27 安徽环巢光电科技有限公司 Yttrium aluminum garnet crystal doped with neodymium, cerium and chromium, and preparation method thereof
CN103409806A (en) * 2013-08-13 2013-11-27 安徽环巢光电科技有限公司 Annealing method of neodymium, cerium and chromium doped yttrium aluminum garnet crystal
CN103833348A (en) * 2013-12-31 2014-06-04 北京雷生强式科技有限责任公司 Self-stimulated emission absorbing material and preparation method thereof
CN112919909A (en) * 2021-03-18 2021-06-08 苏州璋驰光电科技有限公司 Composite structure laser ceramic for Q-switched laser and preparation method thereof

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