CN110785678B - Semiconductor device for indirectly detecting electromagnetic radiation and method of manufacture - Google Patents
Semiconductor device for indirectly detecting electromagnetic radiation and method of manufacture Download PDFInfo
- Publication number
- CN110785678B CN110785678B CN201880029121.5A CN201880029121A CN110785678B CN 110785678 B CN110785678 B CN 110785678B CN 201880029121 A CN201880029121 A CN 201880029121A CN 110785678 B CN110785678 B CN 110785678B
- Authority
- CN
- China
- Prior art keywords
- nanomaterial
- semiconductor device
- membrane
- film
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/2019—Shielding against direct hits
Abstract
The semiconductor device comprises a substrate (1) of semiconductor material having a main surface (10), an integrated circuit (2) in the substrate, a photo-detection element (3) or an array of photo-detection elements (3) arranged on or above the main surface, and at least one nanomaterial film (11, 13) arranged above the main surface. At least a portion of the nanomaterial film has a scintillation property. The method of fabrication includes the use of solvents, in particular by spray printing, by screen printing, by spin coating or by spray coating to apply the nanomaterial film.
Description
Scintillators are used in various applications including, for example, medical imaging applications to receive high-energy electromagnetic or ionizing radiation (such as X-rays and gamma rays) in the middle of a semiconductor imaging device. The incident high-energy radiation is converted into electromagnetic radiation in the visible spectrum that can be detected by conventional photodiodes.
Nanodots are typically small particles having a size of a few nanometers. When electricity or light is applied to the nanodots, the nanodots emit light of a specific wavelength according to their size, shape and material. Nanorods are small particles of elongated shape. Nanowires are small particles of elongated shape extending substantially longer than their diameter in one axis. The aligned layers of nanorods or nanowires emit polarized light.
US 2007/0158573 A1 discloses an X-ray detector comprising a plurality of detection elements, each of which comprises a first scintillator layer converting X-rays to light of a first wavelength and a second scintillator layer converting X-rays that have passed through the first scintillator layer to light of a second wavelength.
US 7403589 B1 discloses a Computed Tomography (CT) detector with a photomultiplier tube and a scintillator which convert X-rays into visible photons.
US 2010/0193700 A1 discloses a spectral photon counting detector comprising a radiation sensitive detector comprising a scintillator in optical communication with a photosensor.
US 2010/0200760 A1 discloses a radiation detector comprising a stacked scintillator element and a photodiode array.
US 2011/0216878 A1 discloses a spectral processor with first and second processing channels that derive first and second spectral signals from a detector signal to obtain the spectral resolution of the detector signal.
US 2013/0187053 A1 discloses a digital quantum dot radiographic detection system comprising a scintillation subsystem and a detection subsystem.
US 2013/024829 A1 discloses an X-ray detector in which the detection element uses a sensing material that directly converts incident photons into charge carriers that are free to move in the sensing material. The circuit determines the number of photons associated with the predetermined energy range. The total electrical power of the detection element remains constant.
US 2013/0292574 A1 discloses a CT detector array having at least one thin light sensitive array layer disposed between at least two scintillator array layers.
WO 2017/025888 A1 discloses an imaging system for computed tomography comprising a radiation sensitive detector array comprising detector pixels with optically transparent encapsulation material having particles supporting different scintillation materials. Each scintillation material is in the form of nano-to micro-quantum dots.
US 2017/0031211 A1 discloses a method of manufacturing a quantum rod layer and a display device including the same.
The object of the present invention is to propose a new semiconductor device for indirectly detecting high-energy electromagnetic radiation, which has a small size and is suitable for mass production. Another object of the present invention is to propose a method of manufacturing such a semiconductor device.
The object is achieved by a semiconductor device for detecting electromagnetic radiation and a method of manufacturing a semiconductor device for detecting electromagnetic radiation.
A semiconductor device for detecting electromagnetic radiation includes a substrate of semiconductor material having a major surface, an integrated circuit in the substrate, and a photodetecting element or array of photodetecting elements disposed at or above the major surface. A nanomaterial film is applied on top of the semiconductor device, which may in particular comprise nanodots, nanorods or nanowires or any combination thereof. A dielectric layer is optionally disposed between the nanomaterial membrane and the photodetector element or array of photodetector elements. At least a portion of the nanomaterial film has a scintillation property.
Semiconductor devices are intended in particular for detecting high-energy electromagnetic radiation or ionizing radiation. By scintillation property is meant the conversion of high energy electromagnetic radiation or ionizing radiation into electromagnetic radiation comprising visible light, typically having a wavelength from 300nm to about 1000 nm. The wavelength range may particularly match the absorption spectrum of silicon.
An embodiment of the semiconductor device comprises a further nanomaterial membrane. At least a portion of the other nanomaterial film has an absorption property and covers an area of the main surface that is outside an area of the photodetector or the array of photodetector elements. Therefore, no photodetection element is covered with the absorption layer. The further nanomaterial membrane may comprise nanodots, nanorods or nanowires or any combination thereof.
Another embodiment of a semiconductor device includes at least two photodetecting elements and at least one other nanomaterial film, at least a portion of which has a scintillation property. Each photodetecting element is covered by a nanomaterial film or by the other nanomaterial film.
In another embodiment, the nanomaterial membrane and at least one other nanomaterial membrane are matched to two different electromagnetic energy levels.
In another embodiment, the nanomaterial film and the at least one other nanomaterial film have different emission wavelengths.
In another embodiment, the nanomaterial film has an emission wavelength from 300nm to 1000 nm.
In another embodiment, the nanomaterial film has an emission wavelength from 400nm to 850 nm.
In another embodiment, the nanomaterial membrane comprises PbS, pbSe, znS, znS, cdSe, cdTe or a combination thereof.
In another embodiment, the nanomaterial membrane comprises a core-shell structure wherein the composition of the inner material forming the core is different from the composition of the outer material forming the shell.
A method of manufacturing a semiconductor device for detecting electromagnetic radiation includes applying a nanomaterial film having a scintillation property at least a portion thereof over a major surface of a substrate of semiconductor material using a solvent.
The nanomaterial film can be applied by jet printing (object printing), by screen printing (silk-screen printing), by spin coating, or by spray coating. Alternatively, other suitable film deposition techniques may be applied.
The following is a more detailed description taken in conjunction with the accompanying drawings.
Fig. 1 is a cross-sectional view of a semiconductor device with a nanomaterial film applied on top.
Fig. 2 is a cross-sectional view of a semiconductor device partially covered with a nanomaterial membrane cap.
Fig. 3 is a cross-sectional view of a semiconductor device having different types of nanomaterial films.
Fig. 4 is a cross-sectional view according to fig. 2 of a device with an array of photodetecting elements.
Fig. 5 is a cross-sectional view according to fig. 4 of a device with a separate portion of a nanomaterial membrane.
Fig. 6 is a cross-sectional view of another semiconductor device having a nanomaterial film applied on top.
Fig. 7 is a cross-sectional view according to fig. 6 of a device with a separate portion of a nanomaterial membrane.
Fig. 8 is a cross-sectional view of a semiconductor device with a separate semiconductor layer and a nanomaterial film applied on top.
Fig. 9 is a cross-sectional view according to fig. 8 of a device with a separate portion of nanomaterial membrane.
Fig. 10 is a cross-sectional view according to fig. 9 of another semiconductor device with a nanomaterial film applied on top.
Fig. 11 is a cross-sectional view of a semiconductor device having two separate semiconductor layers and a nanomaterial film applied on top.
Fig. 12 is a flow chart of a patterned deposition method of a nano-dot film.
Fig. 13 is a partially schematic top view of a pixel array.
Fig. 14 is a schematic top view of an image detection device comprising an array of pixels.
Fig. 1 is a cross-sectional view of a semiconductor device having a nanomaterial film on an upper surface. The semiconductor device comprises a substrate 1 of semiconductor material, which may be, for example, silicon carbide, germanium or any combination thereof. The substrate 1 has a main surface 10 and an opposite main surface 20. The integrated circuit 2 is arranged in the substrate 1 and may be, for example, a CMOS circuit. In the example shown in fig. 1, the integrated circuit 2 is arranged at a main surface 10. To prevent light leakage into the integrated circuit 2, the integrated circuit 2 may be shielded, in particular by a metal layer. The details of the integrated circuit 2 are not necessary for the invention and are not shown in the figures.
The photodetector 3 is arranged at the main surface 10. With respect to a single photo-detecting element 3, a plurality of photo-detecting elements 3 may be provided and may be particularly arranged to form an array for image detection, for example. The photodetector 3 may be, for example, a pn diode, a pin diode, an Avalanche Photodiode (APD), a Single Photon Avalanche Diode (SPAD), or a silicon photomultiplier (SiPM).
A guard ring 4 may be provided to separate the integrated circuit 2 from the photodetector 3. The guard ring 4 may also be arranged between the photo-detecting elements 3 if more than one photo-detecting element 3 is provided. Dielectric layer 30 is optionally arranged on or over major surface 10, which may be, for example, an oxide, nitride or oxynitride of a semiconductor material, or several alternating layers of oxide and silicon, or a high-k dielectric such as hafnium oxide, tantalum oxide or gadolinium oxide.
The nanomaterial membrane 11 is arranged on the upper surface, in particular on or above the dielectric layer 30. The nanomaterial film 11 may cover substantially the entire upper surface of the device. As described above, at least part of the nanomaterial film 11 has a scintillation property. The nanomaterial membrane 11 may comprise nanodots, nanorods or nanowires or a combination thereof. For example, the nanomaterial membrane may be made of PbS, pbSe, znS, znS, cdSe, cdTe, but it may also comprise other materials. The nanodot film can be applied by, for example, jet printing, screen printing, spin coating, or spray coating. These methods are known per se and are not described in detail here.
In particular, the nanomaterial membrane 11 may include a core-shell structure in which the composition of an internal material of the nanomaterial membrane 11 forming the core and the composition of an external material of the nanomaterial membrane 11 forming the shell are different. Part of the nanomaterial membrane 11 may have absorption properties.
In the device shown in fig. 1, the nanomaterial film 11 covers the entire area of the main surface 10. Alternatively, the nanomaterial film 11 may cover only a portion of the major surface 10.
Fig. 2 is a cross-sectional view according to fig. 1 of another semiconductor device. Elements of the semiconductor device according to fig. 2 which correspond to elements of the semiconductor device according to fig. 1 are denoted by the same reference numerals. In the semiconductor device according to fig. 2, the nanomaterial film 11 does not cover the entire area of the main surface 10. In particular, the nanomaterial film 11 may be limited to a region covering the photodetector 3 or the array of photodetector 3.
Fig. 3 is a cross-sectional view according to fig. 1 of another semiconductor device. Elements of the semiconductor device according to fig. 3 which correspond to elements of the semiconductor device according to fig. 1 are denoted by the same reference numerals. The semiconductor device according to fig. 3 comprises a first nanomaterial film 11 and a second nanomaterial film 12, and the nanomaterial films 11, 12 cover different areas of the main surface 10. In particular, the nanomaterial membrane 11, 12 may comprise two different types of nanodots, nanorods or nanowires or a combination thereof. In particular, the first nanomaterial film 11 may be a scintillation film and the second nanomaterial film 12 may absorb incident radiation.
In the example shown in fig. 3, the area of the photodetector 3 or the array of photodetector 3 is covered with a first nanomaterial film 11 (which is a luminescent film). The areas of the integrated circuit 2 and the guard ring 4 are covered with a non-luminescent second nanomaterial film 12.
Fig. 4 is a cross-sectional view according to fig. 2 of another semiconductor device. Elements of the semiconductor device according to fig. 4 which correspond to elements of the semiconductor device according to fig. 2 are denoted by the same reference numerals. The semiconductor device according to fig. 4 comprises a plurality of photodetection elements 3 which may be arranged in particular as an array, for example for image detection. A single scintillation nanomaterial film 11 covers the area of the array of photodetector elements 3. Solder balls 19 may be provided on terminals of the integrated circuit 2 and bond wires 29 may be applied to the solder balls 19 for external electrical connection.
Fig. 5 is a cross-sectional view according to fig. 4 of another semiconductor device. Elements of the semiconductor device according to fig. 5 which correspond to elements of the semiconductor device according to fig. 4 are denoted by the same reference numerals. The semiconductor device according to fig. 5 comprises a plurality of photodetection elements 3 which may be arranged in particular as an array, for example for image detection. Each photodetecting element 3 is covered by a nanomaterial film 11, 13. By way of example, fig. 5 shows a first nanomaterial film 11 and a further nanomaterial film 13. For example, each photodetector element 3 can be provided with a separate scintillation nanomaterial film 11, 13, thus enabling spectral CT.
Fig. 6 is a cross-sectional view according to fig. 1 of another semiconductor device. Elements of the semiconductor device according to fig. 6 which correspond to elements of the semiconductor device according to fig. 1 are denoted by the same reference numerals. The semiconductor device according to fig. 6 comprises a further dielectric layer 31 on the opposite main surface 20. The integrated circuit 2 is arranged on the opposite main surface 20. A wiring including the metal layer 21 and the via 23 is arranged in the dielectric layer 30. Another wiring including another metal layer 22 and another via 24 is arranged in another dielectric layer 31. Contact pads 8 may be arranged on the further metal layer 22 to provide a contact area for application of external electrical contacts, such as solder balls 6. A conductive redistribution layer 7 may be disposed on the further dielectric layer 31. A single scintillation nanomaterial film 11 covers the entire major surface 10.
In order to connect the contact region 18 of the metal layer 21 with the further contact region 28 of the redistribution layer 7 or with a contact region of one of the further metal layers 22, a through-substrate via 5 comprising a conductive material may be arranged in the substrate 1. The through substrate via 5 is adapted to establish an electrical connection between the photodetector 3 and the integrated circuit 2.
Fig. 7 is a cross-sectional view according to fig. 6 of another semiconductor device. Elements of the semiconductor device according to fig. 7 which correspond to elements of the semiconductor device according to fig. 6 are denoted by the same reference numerals. The semiconductor device according to fig. 7 comprises a plurality of photodetection elements 3 which may be arranged in particular, for example, as an array for image detection. Each photodetector element 3 is covered with a nanomaterial film 11, 13. Illustratively, fig. 7 shows a first nanomaterial film 11 and another nanomaterial film 13. For example, each photodetector element 3 can be provided with a separate scintillation nanomaterial film 11, 13, thus enabling spectral CT.
Fig. 8 is a cross-sectional view according to fig. 6 of another semiconductor device. Elements of the semiconductor device according to fig. 8 which correspond to elements of the semiconductor device according to fig. 6 are denoted by the same reference numerals. The semiconductor device according to fig. 8 comprises a semiconductor layer 14, which may be, for example, a thinned further semiconductor substrate, and a second further dielectric layer 32 on the semiconductor layer 14. An implant layer 15 formed by implanting dopants can be disposed at a boundary between the semiconductor layer 14 and the second further dielectric layer 32. A single scintillation nanomaterial film 11 covers the entire major surface 10.
The photodetection element 3 and the optional guard ring 4 are arranged in a semiconductor layer 14. The wirings 21, 22, 23, 24 and the through-substrate via 5 can be adapted to connect the photodetection element 3 with the integrated circuit 2.
Fig. 9 is a cross-sectional view according to fig. 8 of another semiconductor device. Elements of the semiconductor device according to fig. 9 which correspond to elements of the semiconductor device according to fig. 8 are denoted by the same reference numerals. The semiconductor device according to fig. 9 comprises a plurality of photodetection elements 3 which may be arranged in particular, for example, as an array for image detection. Each photodetector element 3 is covered with a nanomaterial film 11, 13. By way of example, fig. 9 shows a first nanomaterial film 11 and a further nanomaterial film 13. For example, each photodetector element 3 can be provided with a separate scintillation nanomaterial film 11, 13, thus enabling spectral CT.
Fig. 10 is a cross-section according to fig. 9 of another semiconductor device. Elements of the semiconductor device according to fig. 10 which correspond to elements of the semiconductor device according to fig. 9 are denoted by the same reference numerals. In the semiconductor device according to fig. 10, the integrated circuit 2 is arranged at the main surface 10. An electrical connection between the photodetection element 3 and the integrated circuit 2 is established through the wired metal interconnection. Such conductive structures are formed by applying conductors on two separate substrates which are then connected by, for example, wafer bonding. The electrical connection at the opposite main surface 20 is provided by a structured conductive layer, which can be, in particular, a redistribution layer 7. The solder balls 6 can be applied directly on the contact areas 9 of the redistribution layer 7.
The semiconductor device according to fig. 10 comprises a plurality of photodetection elements 3 which may be arranged, inter alia, as an array, for example for image detection, and each photodetection element 3 is covered with a nanomaterial film 11, 13. By way of example, fig. 10 shows a first nanomaterial film 11 and another nanomaterial film 13. For example, each photodetector element 3 can be provided with a separate scintillation nanomaterial film 11, 13, thus enabling spectral CT. In an alternative embodiment according to fig. 10, a single scintillation nanomaterial film 11 covers the entire main surface 10.
Another via 25 may be arranged between sections of the metal layer 21 to form a metal interconnect 26 under the guard ring 4. The metal interconnect 26 improves the separation of pixels, each of which comprises a region of one of the photodetector elements 3.
Fig. 11 is a cross-sectional view according to fig. 9 of another semiconductor device. Elements of the semiconductor device according to fig. 11 which correspond to elements of the semiconductor device according to fig. 9 are denoted by the same reference numerals. In the semiconductor device according to fig. 11, the integrated circuit 2 is arranged at the main surface 10. Between the substrate 1 and the semiconductor layer 14 a further semiconductor layer 16 and a third further dielectric layer 33 are arranged, which may be, for example, a thinned further semiconductor substrate. Another integrated circuit 17 can be arranged in the further semiconductor layer 16. For example, the integrated circuit 2 may in particular be provided as a digital CMOS circuit, while the further integrated circuit 17 may in particular be provided as an analog CMOS circuit.
The semiconductor device according to fig. 11 comprises a plurality of photo-detecting elements 3 which may be arranged in particular as an array, for example for image detection. Each photodetector element 3 is covered with a nanomaterial film 11, 13. By way of example, fig. 11 shows a first nanomaterial film 11 and another nanomaterial film 13. For example, each photodetector element 3 can be provided with a separate scintillation nanomaterial film 11, 13, thus enabling spectral CT. In an alternative embodiment according to fig. 11, a single scintillation nanomaterial film 11 covers the entire device.
As shown in fig. 11, a further metal interconnect 27 may be arranged through the dielectric layer 30, the further semiconductor layer 16 and the third further dielectric layer 33. In addition to the purpose of separating pixels, another metal interconnect 27 may be provided as an electrical connection between the photodetector 3 and the integrated circuit 2.
In a semiconductor device including a plurality of photodetecting elements and a scintillation film, a first nanomaterial film converts incident first radiant energy into light of a first wavelength. The corresponding photo-detecting element converts the light into a first photo-current. The second nanomaterial film converts incident second radiant energy into light of a second wavelength. The corresponding photo-detecting element converts the light into a second photo-current. The process can be similarly applied to three or more energy levels using three or more nanomaterial membranes and photodetecting elements.
Fig. 12 is a flow chart of a method of fabricating a patterned nanodot film. The method includes jet printing, screen printing, lithography with subsequent spin coating and stripping of the resist mask, and spin coating with subsequent lithography, etching and removal of the resist mask.
During fabrication, the nanomaterial film 11 is applied on top of a semiconductor chip or wafer after standard processing, particularly after back end of line (BEOL).
Fig. 13 is a schematic top view of a portion of the pixel array 34. The area of a conventional pixel, typically about 1 mm.1 mm in size, is divided into at least four parts. In the example shown in fig. 13, the area of the normal pixel is divided into four quadrants, each of which has a size of about 250 μm-250 μm. A scintillation nanomaterial film was deposited on top of each quadrant. Each nanomaterial film is configured to have its maximized absorption spectrum and to emit light of a different wavelength or spectrum over a range of X-ray energies. In the example shown in fig. 13, the quadrants are adapted for two wavelengths λ1 and λ2 according to a checkerboard pattern. Other arrangements may also be suitable.
The photo-detecting element 3 located below the quadrant senses different wavelengths λ1, λ2. Thus, the X-ray spectrum can be calculated from different electrical signals, which can be estimated by the integrated circuit 2 in the substrate 1. Finally, a digital value for each light intensity can be generated. The pixels may be covered by a pattern optimized for a certain wavelength (energy). The final image can be reconstructed by inserting the missing wavelengths from the adjacent pixels, similar to RGB color imaging for visible light.
Fig. 14 is a schematic top view of an image detection device comprising a pixel array 34. The remaining surface area outside the pixel array 34 can be covered with an absorptive nanomaterial film. The surface areas cover different areas of the device, which may be exemplarily arranged as follows. A first area 35 may be provided for power distribution and placement of I/O pads, a second area 36 for row addressing, and a third area 37 for control and/or logic circuitry. Column amplifiers may be arranged in a fourth area 38 which is also able to accommodate components for analog-to-digital conversion and multiplexing. Fig. 14 also shows an input node 39 for clock and control signals and an output node 40.
The properties of the nanodots, nanorods, or nanowire films can be adapted to obtain absorption in a desired radiant energy range and emission in a desired wavelength range. The nanomaterial can realize an ultrafast scintillator because of its adjustable emission lifetime. The nanodot, nanorod, or nanowire film can be made thinner and laterally more compact than conventional scintillators. These advantages significantly lead to smaller pixel sizes, higher resolution, lower cross-talk between pixels, and better modulation transfer functions for high energy electromagnetic radiation imaging systems, particularly X-ray or CT imaging systems with X-ray spectral analysis capabilities.
List of reference numerals
1 substrate
2 Integrated Circuit
3 photodetection element
4 protection ring
5 through-holes through the substrate
6 solder ball
7 redistribution layer
8 contact pad
9 contact area
10 major surfaces
11 nm material film
12 another nanomaterial membrane
13 another nanomaterial membrane
14 semiconductor layer
15 implant layer
16 other semiconductor layer
17 another integrated circuit
18 contact area
19 solder ball
20 opposite major surfaces
21 metal layer
22 another metal layer
23 through holes
24 another through hole
25 another through hole
26 Metal interconnect
27 another metal interconnect
28 another contact area
29 bonding wire
30 dielectric layer
31 another dielectric layer
32 a second another dielectric layer
33 a third another dielectric layer
34 pixel array
35 first region
36 second region
37 third region
38 fourth region
39 input node
40 output node
Claims (16)
1. A semiconductor device for detecting electromagnetic radiation, comprising:
a substrate (1) of semiconductor material having a main surface (10),
an integrated circuit (2) in the substrate (1),
a nanomaterial film (11) disposed over the main surface (10), at least a portion of the nanomaterial film (11) having a scintillation property, and
a photo-detection element (3) or an array of photo-detection elements (3) arranged at the main surface (10), in the substrate (1) or in a semiconductor layer (14) arranged between the main surface (10) and the nanomaterial film (11), the photo-detection element (3) or the array of photo-detection elements (3) being configured to detect electromagnetic radiation converted by the nanomaterial film (11),
a dielectric layer (30, 32) arranged between the nanomaterial membrane (11) and the photodetector (3) or the array of photodetectors (3).
2. The semiconductor device according to claim 1, wherein
The nanomaterial membrane (11) comprises nanodots, nanorods or nanowires or any combination thereof.
3. The semiconductor device of claim 1, further comprising:
a further nanomaterial membrane, at least a portion of which has absorption properties and covers an area of the main surface (10) other than the photodetector (3) or the array of photodetector (3).
4. The semiconductor device according to claim 3, wherein
The another nanomaterial membrane comprises nanodots, nanorods, or nanowires, or any combination thereof.
5. The semiconductor device of claim 1, further comprising:
the photodetector (3) or an array of photodetectors (3) comprising at least two photodetectors (3),
at least one other nanomaterial membrane, at least a portion of the other nanomaterial membrane having scintillation properties, an
Each of the at least two photodetector elements (3) is covered by a nanomaterial film (11) or at least one other nanomaterial film.
6. A semiconductor device according to claim 5, wherein the nanomaterial membrane (11) and the at least one further nanomaterial membrane are matched to two different electromagnetic energy levels.
7. The semiconductor device according to claim 5, wherein
The nanomaterial membrane (11) and the at least one further nanomaterial membrane have different emission wavelengths.
8. The semiconductor device according to claim 1, wherein
The nanomaterial membrane (11) has an emission wavelength of 300nm to 1000 nm.
9. The semiconductor device according to claim 1, wherein
The nanomaterial membrane (11) has an emission wavelength of 400nm to 850 nm.
10. The semiconductor device according to claim 1, wherein
The nanomaterial membrane (11) comprises PbS, pbSe, znS, cdSe, cdTe or a combination thereof.
11. The semiconductor device according to claim 1, wherein
The nanomaterial membrane (11) comprises a core-shell structure wherein the composition of the inner material is different from the composition of the outer material.
12. A method of manufacturing a semiconductor device for detecting electromagnetic radiation, comprising:
using a solvent to apply a nanomaterial film (11) over a major surface (10) of a substrate (1) of semiconductor material, at least a portion of the nanomaterial film (11) having scintillation properties,
wherein an integrated circuit (2) is arranged in the substrate (1),
wherein a photodetecting element (3) or an array of photodetecting elements (3) is arranged at a main surface (10) in the substrate (1), and
wherein a dielectric layer (30) is applied on the main surface (10) of the substrate (1), and a nanomaterial film (11) is applied on the dielectric layer (30).
13. The method of claim 12, further comprising:
the nanomaterial membrane (11) is applied by jet printing.
14. The method of claim 12, further comprising:
the nanomaterial membrane (11) is applied by screen printing.
15. The method of claim 12, further comprising:
the nanomaterial film (11) is applied by spin coating.
16. The method of claim 12, further comprising:
the nanomaterial membrane (11) is applied by spraying.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17169279.1 | 2017-05-03 | ||
| EP17169279.1A EP3399344B1 (en) | 2017-05-03 | 2017-05-03 | Semiconductor device for indirect detection of electromagnetic radiation and method of production |
| PCT/EP2018/060072 WO2018202431A1 (en) | 2017-05-03 | 2018-04-19 | Semiconductor device for indirect detection of electromagnetic radiation and method of production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110785678A CN110785678A (en) | 2020-02-11 |
| CN110785678B true CN110785678B (en) | 2023-09-29 |
Family
ID=58668807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880029121.5A Active CN110785678B (en) | 2017-05-03 | 2018-04-19 | Semiconductor device for indirectly detecting electromagnetic radiation and method of manufacture |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11255983B2 (en) |
| EP (1) | EP3399344B1 (en) |
| CN (1) | CN110785678B (en) |
| WO (1) | WO2018202431A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4004603A4 (en) * | 2019-07-26 | 2023-03-15 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector with quantum dot scintillators |
| CN112822421B (en) * | 2019-11-15 | 2023-04-07 | 京东方科技集团股份有限公司 | Pixel sensor, control method thereof and detector |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101401208A (en) * | 2006-03-15 | 2009-04-01 | 皇家飞利浦电子股份有限公司 | Semiconductor device for radiation detection |
| CN103959098A (en) * | 2011-11-29 | 2014-07-30 | 皇家飞利浦有限公司 | Scintillator pack comprising X-ray absorbing encapsulation and X-ray detector array comprising such scintillator pack |
| US9151668B1 (en) * | 2011-01-12 | 2015-10-06 | Radiation Monitoring Devices, Inc. | Quantum dot radiation detection, systems and methods |
| CN105074929A (en) * | 2013-03-01 | 2015-11-18 | ams有限公司 | Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation |
| CN106206636A (en) * | 2016-08-16 | 2016-12-07 | 京东方科技集团股份有限公司 | A kind of X-ray detection panel and preparation method thereof |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7742322B2 (en) * | 2005-01-07 | 2010-06-22 | Invisage Technologies, Inc. | Electronic and optoelectronic devices with quantum dot films |
| EP1741826A1 (en) * | 2005-07-08 | 2007-01-10 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Method for depositing a polymer layer containing nanomaterial on a substrate material and apparatus |
| US7388208B2 (en) | 2006-01-11 | 2008-06-17 | Ruvin Deych | Dual energy x-ray detector |
| DE102006017291B4 (en) * | 2006-02-01 | 2017-05-24 | Paul Scherer Institut | Focus / detector system of an X-ray apparatus for producing phase contrast recordings, X-ray system with such a focus / detector system and associated storage medium and method |
| WO2007117698A2 (en) * | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Composition including material, methods of depositing material, articles including same and systems for depositing material |
| DE112008000738T5 (en) * | 2007-03-26 | 2010-02-04 | General Electric Company | Scintillators and process for their preparation |
| US7403589B1 (en) | 2007-03-27 | 2008-07-22 | General Electric Company | Photon counting CT detector using solid-state photomultiplier and scintillator |
| RU2009149484A (en) | 2007-06-01 | 2011-07-20 | Конинклейке Филипс Электроникс Н.В. (Nl) | SPECTRAL PHOTON COUNT DETECTOR |
| US8611489B2 (en) | 2008-11-25 | 2013-12-17 | Koninklijke Philips N.V. | Spectral imaging |
| KR101034471B1 (en) * | 2009-01-13 | 2011-05-17 | (주)세현 | X-ray detector and method of manufacturing the same |
| US8373132B2 (en) | 2009-02-06 | 2013-02-12 | Koninklijke Philips Electronics N. V. | Radiation detector with a stack of scintillator elements and photodiode arrays |
| US9422159B2 (en) | 2010-07-15 | 2016-08-23 | Leigh E. Colby | Quantum dot digital radiographic detection system |
| BR112014000776A2 (en) * | 2011-07-12 | 2019-09-10 | Univ Wake Forest | optoelectronic devices and their applications |
| DE102012204766B4 (en) | 2012-03-26 | 2015-07-02 | Siemens Aktiengesellschaft | X-ray detector with photon counting direct-converting detector elements and method for maintaining the temperature of the X-ray detector |
| US9012857B2 (en) | 2012-05-07 | 2015-04-21 | Koninklijke Philips N.V. | Multi-layer horizontal computed tomography (CT) detector array with at least one thin photosensor array layer disposed between at least two scintillator array layers |
| US8962378B2 (en) * | 2012-07-16 | 2015-02-24 | The Boeing Company | Photodiode and method for making the same |
| JP6086721B2 (en) * | 2012-10-31 | 2017-03-01 | 富士フイルム株式会社 | Semiconductor film, semiconductor film manufacturing method, solar cell, light emitting diode, thin film transistor, and electronic device |
| RU2532645C1 (en) * | 2013-04-29 | 2014-11-10 | Общество с ограниченной ответственностью "Научно-технический центр "МТ" (ООО "НТЦ-МТ") | Method of forming patterned scintillator on surface of pixelated photodetector (versions) and scintillation detector made using said method (versions) |
| EP3032583B1 (en) * | 2014-12-08 | 2020-03-04 | ams AG | Integrated optical sensor and method of producing an integrated optical sensor |
| WO2016144779A1 (en) * | 2015-03-06 | 2016-09-15 | Massachusetts Institute Of Technology | Systems, methods, and apparatus for radiation detection |
| WO2017015473A1 (en) * | 2015-07-21 | 2017-01-26 | Minnesota Imaging And Engineering Llc | Detector systems for radiation imaging |
| US10795207B2 (en) | 2015-07-29 | 2020-10-06 | Lg Display Co., Ltd. | Quantum rod layer, method of fabricating the same and display device including the same |
| US10527739B2 (en) | 2015-08-07 | 2020-01-07 | Koninklijke Philips N.V. | Quantum dot based imaging detector |
-
2017
- 2017-05-03 EP EP17169279.1A patent/EP3399344B1/en active Active
-
2018
- 2018-04-19 US US16/608,272 patent/US11255983B2/en active Active
- 2018-04-19 CN CN201880029121.5A patent/CN110785678B/en active Active
- 2018-04-19 WO PCT/EP2018/060072 patent/WO2018202431A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101401208A (en) * | 2006-03-15 | 2009-04-01 | 皇家飞利浦电子股份有限公司 | Semiconductor device for radiation detection |
| US9151668B1 (en) * | 2011-01-12 | 2015-10-06 | Radiation Monitoring Devices, Inc. | Quantum dot radiation detection, systems and methods |
| CN103959098A (en) * | 2011-11-29 | 2014-07-30 | 皇家飞利浦有限公司 | Scintillator pack comprising X-ray absorbing encapsulation and X-ray detector array comprising such scintillator pack |
| CN105074929A (en) * | 2013-03-01 | 2015-11-18 | ams有限公司 | Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation |
| CN106206636A (en) * | 2016-08-16 | 2016-12-07 | 京东方科技集团股份有限公司 | A kind of X-ray detection panel and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US11255983B2 (en) | 2022-02-22 |
| US20200124748A1 (en) | 2020-04-23 |
| EP3399344A1 (en) | 2018-11-07 |
| EP3399344B1 (en) | 2021-06-30 |
| WO2018202431A1 (en) | 2018-11-08 |
| CN110785678A (en) | 2020-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8264019B2 (en) | Multiplexed output two terminal photodiode array for imaging applications and related fabrication process | |
| JP5113352B2 (en) | Photodetection system and module | |
| US11652176B2 (en) | Semiconductor devices with single-photon avalanche diodes and light scattering structures with different densities | |
| KR20140008983A (en) | Method and apparatus for image sensor packaging | |
| JP2008244251A (en) | Amorphous silicon photodiode, manufacturing method thereof and x-ray imaging apparatus | |
| JP2004241653A (en) | X-ray image pickup device | |
| CN110785678B (en) | Semiconductor device for indirectly detecting electromagnetic radiation and method of manufacture | |
| WO2006126027A2 (en) | Light sensor module | |
| CN109342465B (en) | Integrated scintillator grid with photodiodes | |
| US11953632B2 (en) | X-ray detector component, X-ray detection module, imaging device and method for manufacturing an X-ray detector component | |
| US20230253513A1 (en) | Semiconductor Devices with Single-Photon Avalanche Diodes and Light Scattering Structures | |
| US11714205B2 (en) | Sensor unit, radiation detector and method of manufacturing a sensor unit | |
| JP6552850B2 (en) | Light detection device | |
| JP7213951B2 (en) | Image sensor, image sensor device, and computed tomography device including these | |
| JP5534081B2 (en) | Manufacturing method of solid-state imaging device | |
| US9559139B2 (en) | Integrated scintillator grid with photodiodes | |
| EP4287258B1 (en) | Photon counting detector | |
| US20230387332A1 (en) | Scattering structures for single-photon avalanche diodes | |
| US20220260736A1 (en) | Silicon photomultipliers for positron emission tomography imaging systems | |
| US20240055537A1 (en) | Semiconductor Devices with Single-Photon Avalanche Diodes, Light Scattering Structures, and Multiple Isolation Structures | |
| WO2021199701A1 (en) | Light receiving element and electronic equipment | |
| US9419046B2 (en) | Integrated scintillator grid with photodiodes | |
| US20160329372A1 (en) | Integrated scintillator grid with photodiodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |