CN110783811A

CN110783811A - High-power module for surface-emitting laser chip

Info

Publication number: CN110783811A
Application number: CN201911038830.2A
Authority: CN
Inventors: 曹亚运; 肖岩; 周德来
Original assignee: Shenzhen Lemon Photon Technology Co Ltd
Current assignee: Shenzhen Lemon Photon Technology Co Ltd
Priority date: 2019-10-29
Filing date: 2019-10-29
Publication date: 2020-02-11

Abstract

The invention relates to a high-power module aiming at surface-emitting laser chips, which comprises a plurality of cold plates, wherein each cold plate is packaged with a plurality of surface-emitting laser chips, and the plurality of cold plates are stacked to form a high-power semiconductor laser module with a stacked heat dissipation structure. The high-power module is a new attempt aiming at the integration of high heat density of the surface-emitting laser chip, and can also realize the heat release of high power and high heat density compared with the traditional stacked laser, because the requirement of the surface-emitting laser chip on the use environment is lower than that of the edge-emitting laser chip, the high-power laser can be applied to some severe use environments.

Description

High-power module for surface-emitting laser chip

Technical Field

The invention relates to the technical field of laser, in particular to a high-power module aiming at a surface-emitting laser chip.

Background

In the past, in the field of high-power semiconductor lasers, edge-emitting semiconductor lasers based on GaAs materials have occupied the domination and are widely applied to the fields of industry, medical treatment, scientific research and the like, however, edge-emitting semiconductor lasers have the fatal defect, although the expected life is as long as tens of thousands of hours, under the pulse state, the probability of optical disaster degeneration and damage is very high, the influence on the life is serious, the actual service life of the edge-emitting semiconductor lasers is far from the ideal expected life, and meanwhile, along with the increase of power, the two-dimensional stacked array of edge-emitting modules is increased, and the actual effect can be continuously reduced. Therefore, development of a new semiconductor laser applicable to the industrial field is required.

Since 1980, the scientific community has emerged a lot of new achievements of semiconductor physical research, such as crystal epitaxial growth technology (e.g. Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) and Chemical Beam Epitaxy (CBE), etc.), so that semiconductor lasers have successfully applied new quantum well and strained quantum well structures, and semiconductor Laser chip packaging technology, beam shaping technology have been developed sufficiently, and a major breakthrough has been made, so that the varieties and wavelengths of semiconductor lasers have been greatly expanded, and at present, according to the relationship between the light Emitting direction and the epitaxial wafer plane of the Laser chip, the lasers can be divided into Edge Emitting semiconductor lasers (EEL-Edge Emitting Laser), vertical cavity Surface Emitting lasers (VCSEL-vertical cavity Surface Emitting lasers) and the latest horizontal cavity Surface Emitting lasers (HCSEL-horizontal cavity Surface Emitting lasers), the light emitting directions of the VCSELs and the HCSELs are vertical to the direction of the epitaxial wafer and are emitted from the top surface of the reaction region, and the light emitting direction of the edge-emitting semiconductor laser is parallel to the direction of the epitaxial wafer and is emitted from the edge of the reaction region. The two surface-emitting laser chips have the advantages of high surface reflectivity, long expected service life, low failure rate, capability of bearing high working temperature, uniform heating of the body and the like due to the structure. Meanwhile, the packaging is simple and is similar to the LED packaging process. Along with the development of the technology, the monomer power of the surface emitting laser is more and more close to the bar, so the surface emitting laser is more and more robbed in the high power field.

Nowadays, high-power semiconductor lasers are hot spots traced by countries due to wide application prospects and huge potential markets, but the problems of reliability, stability, consistency and the like limit the practical application of the high-power semiconductor lasers to a great extent, and one of the problems faced by the high-power semiconductor lasers is the performance of the lasers. I.e. the output photoelectric conversion efficiency (i.e. output optical power/input electrical power-ratio) of the laser.

Besides being related to laser epitaxial materials and packaging, the problems are influenced by overall heating density and heat dissipation efficiency to a great extent, namely, the heating affects the loss-gain ratio of a chip and the luminous efficiency of the chip, and meanwhile, the problems have certain influence on output wavelength. Traditional stack formula laser instrument is only applicable to the high heat density integration of limit transmission laser chip barre, and the narrow and small light emitting area of limit transmission laser chip is to service environment's strict requirement, because it is narrow and small to send out the light zone, damages because environmental disturbance easily, and the light path plastic of limit transmission integrated module is that some microlens of frock are on the module, need more microfabrication, and follow-up equipment also needs a large amount of accurate frock operations, and this will make the defective rate higher.

At present, the micro-channel is arranged in the radiator of the laser in the market for radiating, however, the water pressure debugging of the internal flow channel is more troublesome, the process of parts is more complex, and the number of manufacturers which can be realized at present is small. Because the inside of the microchannel is the microchannel, the microchannel is easy to block under the condition of incomplete fluid, and only the plugging plate can be replaced, so that the relative maintenance cost is high.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: the high-power module for the surface-emitting laser chip is provided, and the problems that the existing high-power module is lack of reliability, stability, consistency and the like, and the use environment is strictly required and the like are solved.

In order to solve the technical problems, the invention adopts the following technical scheme:

the utility model provides a high power module to surface-emitting laser chip, includes many cold drawing, and every cold drawing is packaged with a plurality of surface-emitting laser chips, and many cold drawing pile up and form the high power semiconductor laser module that has stack formula heat radiation structure.

As some embodiments, each cold plate is individually packaged into a separate module; each cold plate is provided with an electrode module; each cold plate is packaged with a plurality of surface-emitting laser chips which are sequentially arranged, mutually connected in series and connected with the electrode module in series; the surface-emitting laser chips encapsulated on each cold plate are arranged in a row; the surface-emitting laser chips of the plurality of cold plates are arranged in a chip array.

As some embodiments, the surface-emitting laser chip is a COS module, including a surface-emitting laser and a heat sink, integrally welded to the cold plate through the heat sink; the heat generated by the surface-emitting laser chip is transferred to the cold plate through the heat sink to be radiated; the cold plate is a high heat conduction metal plate; a limiting stepped groove is formed on the surface of the cold plate, and the surface-emitting laser chip is welded in the stepped groove in an aligned manner; the electrode module arranged on the cold plate has a step fall distance with the surface of the surface-emitting laser chip, so that the short circuit caused by the direct contact of the connecting wire with the cold plate is avoided.

As some embodiments, the light emitting surface of the surface-emitting laser chip is provided with a collimating lens to adjust the uniformity of the light beam of the surface-emitting laser chip; a collimating lens is arranged on the light emitting surface of the row of surface-emitting laser chips to adjust the uniformity of the light beams of the row of surface-emitting laser chips; a plurality of parallel collimating lenses are arranged on the light emitting surface of the surface-emitting laser chip array to adjust the uniformity of the light beams of the surface-emitting laser chip array; the collimating lens is fixed on one side of the cold plate, which is packaged with the surface-emitting laser chip, by a collimating lens support; setting principle of the collimating lens: when the emitted light of the surface-emitting laser chip reaches the collimating lens, the light beam width is within the range of the action surface of the width of the lens of the collimating lens, so that the light combination efficiency and the uniformity of light emitting spots of the whole module are ensured.

As some embodiments, the setting principle of the collimating lens is as follows: the emitted light of the laser emitting chip reaches the collimating lens and is just within the lens width action face boundary, so that the light combination efficiency is ensured; when the adjacent cold plates are combined, the light beams in the upper row and the light beams in the lower row are not interfered with each other; the two sides of the width direction of the collimating lens are only provided with allowance positions for dispensing and fixing the lens; the emitted light of the surface-emitting laser chip is a divergent light beam; the surface emitting laser chip is an HCSEL or VCSEL chip.

As some embodiments, a cooling liquid flow channel, and a water inlet and a water outlet which are communicated with the flow channel are processed in each cold plate, and the cooling liquid is respectively guided into the flow channel from the water inlet and is discharged from the water outlet, so as to dissipate heat of the surface-emitting laser chip; the flow channel in the cold plate is sealed by a sealing gasket; and laminating the plurality of cold plates layer by layer to compress the sealing gasket.

As some embodiments, the flow channels in each cold plate are independently arranged, and the flow channels in a plurality of cold plates are connected in parallel; the water inlets and the water outlets of each cold plate are communicated; at least one water inlet is externally connected with a water inlet pipe to be connected with cooling liquid, and at least one water outlet is externally connected with a water outlet pipe to discharge the cooling liquid to take away heat.

As some embodiments, the flow channels within the cold plate are macro-channel flow channels; the flow channel is a slot formed by the top surface or the bottom surface of the cold plate, the slot is sealed by a sealing gasket, and each flow channel is isolated by the sealing gasket; the sealing gasket is provided with openings corresponding to the water inlets and the water outlets of the flow channels in the cold plates, so that the water inlets and the water outlets of the flow channels of the cold plates are communicated; a bent channel is designed in the flow channel to lengthen the flow channel so as to increase the heat exchange efficiency; a plurality of protruding fins are arranged in the flow channel to form a structure similar to a radiating fin; a groove backflow structure is arranged in the flow channel and close to the surface-emitting laser chip.

As some embodiments, the flow channel within each cold plate extends along the length of the surface-emitting laser chip arrangement; the surface emitting laser chip is arranged on the outer wall surface of the cold plate in the length direction; further forming a groove structure on the protruding fins at the back side of the flow direction of the cooling liquid, thereby forming a groove reflow structure; the plurality of protruding fins are also arranged in parallel, extend from one side of the packaged chip to the other side along the width direction of the cold plate, are arranged in the flow channel in a protruding manner, and are vertical to the flow direction or resist the flow of the cooling liquid at a certain angle; the other inner side wall of the flow passage opposite to the chip mounting side forms a curve corresponding to the protruding fin.

As some embodiments, mounting holes are arranged on the periphery of the flow channel and/or in the flow channel of each layer of cold plates, and the cold plates and the sealing gasket are matched with the mounting holes through fasteners to be fastened and pressed; the uppermost cold plate of the cold plate stack type structure is used as a top sealing plate; the bottom of top closing plate sets up the runner, and the top sets up the mounting groove, and the mounting groove diapire is provided with the mounting hole position that another layer was sealed to fill up in order to cover and sealed runner, the division board of the built-in adaptation of mounting groove, and the division board pressfitting is sealed another layer is sealed fill up and is fastened together with top closing plate to form holistic leak protection structure.

The invention has the beneficial effects that:

the high-power semiconductor laser module provided by the invention has high-quality laser array strips and a high-efficiency heat dissipation structure, and has high stability and high reliability. Meanwhile, the packaging structure is simple, efficient, low in cost and convenient to widely apply. The invention relates to a novel packaging structure of a high-power module for a surface-emitting laser chip array, which increases the flexibility of high-power integration of the surface-emitting laser chip and can adjust the internal heat dissipation structure and the number of stacked cold plates according to compatible chips.

Furthermore, the high-power module for the surface-emitting laser chip of the invention is a new attempt for high heat density integration of the surface-emitting laser chip, and compared with the traditional stacked laser, the high-power high heat density module can also realize high-power high heat density heat release, but the traditional stacked laser is only suitable for high heat density integration of the side-emitting laser chip, and the structure is suitable for high density integration of various surface-emitting laser chips. The invention solves the problem of high-power integration of the surface emitting laser chip, and the high-power laser can be applied to some severe use environments.

The laser can directly use a medium-sized optical lens on a surface emitting integrated module, can meet debugging requirements through conventional processing and tooling, and avoids the processes of micro-processing and micro-tooling.

Further, the flow passages in the cold plate of the present invention are macro-channels, thus: (1) compared with the micro-channel, the processing belongs to conventional processing, and the relative realization degree in the process is much higher; (2) in the macro-channel flow channel, the cooling medium has no strict requirement under the condition of meeting the fluid requirement, and the adaptability is good; (3) temperature subsection adjustment is easy to realize, points needing to be adjusted can be directly positioned according to the characteristics of the macro-channel flow channel, and the temperature characteristics of a certain point cannot be accurately adjusted and controlled due to the multi-layer microstructure of the micro-channel.

The present invention is described in further detail below with reference to the attached drawing figures.

Drawings

Fig. 1 is a perspective view of a high power module for a surface-emitting laser chip according to an embodiment of the present invention.

Fig. 2 is an exploded view of a high power module for a surface-emitting laser chip according to an embodiment of the present invention.

FIG. 3 is a schematic view of an assembly structure of the inter-cold plate unit according to the embodiment of the invention.

Fig. 4 is a perspective view of a single cold plate unit of an embodiment of the present invention.

FIG. 5 is a schematic diagram of a single cold plate laminar flow channel and temperature gradients in accordance with an embodiment of the present invention.

Detailed Description

It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict, and the present invention is further described in detail with reference to the accompanying drawings and specific embodiments.

Referring to fig. 1-5, embodiments of the present invention relate to a high power module 100 for a surface emitting laser chip, which can be used as a high power direct semiconductor laser, for example, as a high speed cladding module for a high speed laser cladding system. The high power module 100 of the present invention is a high stability, high reliability, high power semiconductor laser module with high quality laser array bars and high efficiency heat dissipation structure; and the packaging structure is simple, efficient, low in cost and suitable for wide application.

The high power module 100 of the present invention is a stacked cold plate package structure, which includes a plurality of cold plates stacked together, each of which is integrated with a plurality of surface emitting laser chips 14 to form a single module.

Wherein, the cold plate of the uppermost layer is used as the top sealing plate 2, the cold plate of the lowermost layer is used as the bottom sealing plate 3, and a plurality of separated cold plates 7 in the middle are stacked up and down. Each cold plate of the stack type packaging structure is marked as a middle layer of cold plate 7 and top and

bottom sealing plates

2 and 3, and a plurality of surface-emitting laser chips 14 are integrated on the surface of the outer wall. A plurality of surface-emitting laser chips 14 are packaged on the outer wall surface of the same side of each cold plate, preferably, a plurality of chips integrated on each layer are respectively arranged into a row of surface-emitting laser chips, and each layer of the plurality of surface-emitting laser chips 14 can be sequentially connected in series end to end and connected in series with the electrode modules 8 arranged on each layer of cold plate. Correspondingly, the chips integrated in each layer of the stacked packaging structure are arranged into a surface-emitting laser chip array 4, and a collimating lens 5 is arranged on the light emitting surface of the surface-emitting laser chip 14 integrated in each cold plate 7 for adjusting the uniformity of the light beams of the surface-emitting laser chips. The high power module 100 (cold plate stack package) is also connected to a water inlet pipe 1 and a water outlet pipe 6. The water inlet pipe 1, the top sealing plate 2, the cold plates 7 and the internal flow channels 12 of the bottom sealing plate 3 and the water outlet pipe 6 are communicated to form a cooling channel. Preferably, the flow channels 12 inside each cold plate 7 and the flow channels 12 inside the top and bottom sealing plates are in parallel communication with the inlet pipe 1 and the outlet pipe 6 at the water inlet and outlet. The top seal plate 2, the bottom seal plate 3, and the separate cold plate 7 are all high thermal conductivity materials such as, but not limited to, copper. The stacked heat sink is formed by stacking the

sealing plates

2 and 3 and the plurality of separated cold plates 7 up and down, and the

sealing plates

2 and 3 and each cold plate are used as heat dissipation blocks for packaging the plurality of surface-emitting laser chips 14 and dissipating heat for the plurality of surface-emitting laser chips 14.

The surface emitting laser chip may be one of HCSEL and VCSEL, and the high power module 100 of the present invention is preferably applied to a HCSEL chip module.

In a specific embodiment, referring to fig. 3-4, a high power module 100 for a surface emitting laser chip includes an individual module packaged and integrated by a plurality of surface emitting laser chips, such as HCSEL chips, wherein the individual chip 14 is aligned with a positioning reference, i.e., a limiting side, of an individual heat sink (cold plate 7/sealing plate 2, 3), after being attached, a plurality of chips (15 as shown in the figure) are sequentially arranged end to end and integrated on the heat sink (cold plate 7/sealing plate 2, 3), and then the chips are soldered to the heat sink by solder, and the whole module is placed on a gold wire bonding device, and the chips are bonded end to end and connected to electrode modules 8 at two ends by gold wires 11, so that the chips 14 sequentially arranged end to end form a serial electrical connection.

As an embodiment, each individual cold plate 7 has a uniform shape, the upper and lower surfaces of two adjacent cold plates 7 may be sealed to form a sealing layer, the outer surface of each cold plate 7 along the length direction is used for integrating a row of surface-emitting laser chips 14, the chips 14 are arranged end to end, the pair of electrode modules 8 are respectively disposed at two ends of the cold plate 7 or the row of surface-emitting laser chips 14, and the surfaces of the cold plates encapsulating the surface-emitting laser chips 14 form a limiting step 16, so as to facilitate the mounting and positioning of the surface-emitting laser chips 14 and the electrical connection of the gold wires 11. The limiting steps 16 form stepped grooves on the surfaces of the cold plates, and in each row of chips of the surface-emitting laser chip array 4, the chips 14 are connected end to end and aligned, packaged and welded into the stepped grooves according to the positioning reference of the modules. Each cold plate is integrated by multi-chip package, and can be freely matched in power.

The limiting step 16 assembled by a chip array is processed on each cold plate (the

sealing plates

2 and 3 and the separating cold block 7) to serve as a positioning reference for installing the chip, and meanwhile, the electrode module 8 is positioned, glued and fixed according to the limiting step 16, so that a certain step fall distance exists between the electrode module 8 and the routing surface of the chip, and the phenomenon that the gold thread 11 is in direct contact with the

sealing plates

2 and 3 or the cold plates 7 made of copper materials or other high-heat-conductivity metal materials to cause short circuit can be avoided.

Each cold drawing integration a plurality of chips, the integrated high power laser module of a plurality of cold drawing stack formula structures simultaneously, its power collocation scheme is diversified, and can only adjust cold drawing quantity, all has very high advantage in cost and power collocation flexibility.

The light emitting surface of the surface-emitting laser chip 14 is further provided with a collimating lens 5, the light emitted by the chip is a diverging light beam 15 (as shown in fig. 3), and the collimating lens 5 is used for adjusting the uniformity of the light beam. The distance and the actual size of the collimating lens 5 on the separating cold plate 7 and the

sealing plates

2 and 3 can be adjusted according to actual requirements to adjust the uniformity of light beams, so that the distance point is ensured, and the light flux width is within the critical point of the working range of the collimating lens.

The chips integrated on the independent cold plates 7 and the

sealing plates

2 and 3 are respectively arranged in a row, a collimating lens 5 is arranged corresponding to each layer to adjust the uniformity of light beams emitted by the chips in the row, the distance point of the collimating lens 5 is located, and the light flux width is within the critical point of the working range of the collimating lens, so that the light combination efficiency is ensured.

After a plurality of separated cold plates 7 and the

sealing plates

2 and 3 are stacked, one collimating lens 5 arranged on the light emitting surface of each row of chips is arranged in parallel to form a plurality of layers. Accordingly, the collimating lens on the light-emitting surface of the surface-emitting laser chip array of the high-power module 100 of the present invention forms a plurality of collimating lens groups arranged in parallel.

Preferably, the collimating lens group is arranged on the light-emitting surface of the surface-emitting laser chip array, and the position of the collimating lens group is as shown in the light-emitting range of the chip in fig. 3-4, so that when the divergent light beam 15 emitted by the chip reaches the collimating lens, the divergent light beam is just within the interface of the lens width action surface, the light combination efficiency is ensured, and the light combination quality of the upper and lower rows of light beams is not influenced when the adjacent cold plate lasers are combined.

The collimating lens 5 is fixed on the middle cold plate 7 and the chip light-emitting surfaces of the top and

bottom sealing plates

2 and 3 by a collimating lens support 9. The collimation lenses arranged in parallel of the middle cold plates 7 and the top and

bottom sealing plates

2 and 3 are fixed on the collimation lens bracket 9. The collimating lens support 9 is panel-shaped, and the middle of the collimating lens support is provided with a mounting window for mounting the collimating lens. The collimating lens support 9 is fixed on one side of the stacked package structure of the plurality of cold plates by screws or fasteners, so that each fixed collimating lens 5 is respectively positioned on the light emitting surface of each layer of integrated chips.

The surface-emitting laser chip array 4 is formed by welding COS modules (chip and heat sink integrated modules) on the cold plate 7 and the top and bottom sealing covers 2 and 3, so that routing is facilitated, and heat generated by the surface-emitting laser chip can be directly and quickly transferred to a cold plate (such as a copper plate) through the heat sink to be uniformly radiated.

Each cold plate is internally provided with a water cooling flow channel 12, the water cooling flow channel 12 is formed by directly processing the cold plate and is a channel which is sunken from the top surface or the bottom surface by a certain depth along the thickness direction of the cold plate and extends along the length direction of the cold plate or the arrangement direction of the integrated chips. The flow channels 12 are isolated from each other when laminar flow is provided through the thickness of the cold plate. Each row of chips is provided with a water channel (cooling water or other cooling liquid) correspondingly.

As an embodiment, the coolant channel 12 is formed by machining a channel groove along the entire thickness direction of the cold plate 7, the top notch is open, the bottom wall of the channel groove has a certain thickness for isolating the channel between each layer of chips, and only the front and rear water inlets and outlets are communicated with each other. The whole flow channel extends along the length direction of the cold plate, and a plurality of bent channels are formed in the flow channel to increase the length of the flow channel.

Furthermore, a fin structure for locally enhancing heat dissipation is added in the flow channel of the middle cold plate 7 and the top and

bottom sealing plates

2 and 3 to increase the liquid cooling contact area of the chip packaging side, particularly, a groove backflow structure is constructed on the back side in the flow direction, so that the local heat exchange efficiency can be increased, and the flow of cooling liquid in the middle cold plate 7 and the top and

bottom sealing plates

2 and 3 is increased. Specifically, in the flow channel 12 of the middle cold plate 7 and the top and

bottom sealing plates

2 and 3, a plurality of protruding fins are formed on the inner side wall of the flow channel 12 corresponding to one side of the chip package, one side of the protruding fins 18 faces the water inlet, namely, the water flow direction, and the other side faces the water outlet, namely, the flow direction is toward the back side, a small groove structure is further formed on the back side in the flow direction, so that the contact area of the cooling liquid on the chip package side is increased, and meanwhile, a groove backflow structure is constructed on the back side, namely, the position corresponding to the packaged chip, so that.

In this embodiment, a row of grooves 19 is arranged in parallel from one side close to the chip to the other. The plurality of protruding fins are also arranged in parallel, extend from one side of the packaged chip to the other side along the width direction of the cold plate, are protrudingly arranged in the flow channel 12 and are vertical to the flow direction or form a certain angle to resist the flow of cooling liquid, the other inner side wall of the flow channel 12, which is opposite to the chip mounting side, and correspondingly form a rear concave curve channel with the protruding fins 18, so that a wavy or curved wall surface is formed, protruding teeth 20 are formed at the connecting parts between the adjacent rear concave curve channels, a plurality of screw holes 17 or mounting holes are arranged on the edge of the flow channel (including the protruding teeth 20), and are locked with the screw holes 17 by screws 23 or other fasteners, so that all layers are fixed together. And a sealing gasket 10 is arranged at the top of each flow passage to seal the top of the flow passage 12, so that the flow passage 12 on the cold plate 7 forms an independent flow passage, the upper part and the lower part and the periphery of the flow passage are sealed, and only the water inlet and the water outlet are communicated with the water outlets of other layers. The protruding fins 18 and the protruding teeth 20 in the curved flow channel are arranged in a staggered manner, so that the length of the flow channel is increased. The curved and extended flow channel 12 and/or the protruded fin 18 and/or the groove 19 and/or the protruded tooth 20 flowing to the back side form a flow channel buffer structure, so that the flow path of the cooling liquid is lengthened, a backflow structure is formed, the heat dissipation effect is enhanced, and the heat dissipation efficiency is improved.

The two ends of the flow channel 12 are correspondingly provided with a water inlet 120 and a water outlet 121, the water inlets 120 and the water outlets 121 of the flow channels 12 of the cooling plates are mutually communicated and respectively communicated with the water inlets 120 and the water outlets 121 of the sealing plates 2 and the sealing plates 3 at the top and the bottom, cooling liquid is led in from the water inlet pipe 1 and finally flows out from the water outlet pipe 6. Preferably, the water inlets of the cold plates and the top and bottom sealing plates are aligned up and down, the water outlets are aligned up and down, and the internal flow channels 12 are parallel. In this embodiment, the water inlet 120 and the water outlet 121 of each middle layer of the cold plate 7 are through holes penetrating the thickness and respectively disposed near two ends in the length direction.

Each layer of cold drawing 7 and top and

bottom closing plate

2, 3 wholly constitute stack formula heat radiation structure, and runner 12 is the macro-channel, and the runner in each layer of cold drawing is parallelly connected, avoids the big problem of the inlet outlet cooling effect difference of series connection coolant liquid runner, and the temperature difference of control heat dissipation homogeneity and inlet outlet that can be better guarantees the 4 whole temperature equalities of chip array, avoids producing local decay and influences light beam quality scheduling problem. The parallel flow channel buffer structure is compared with the traditional series flow channels, a large amount of heat absorption of water at the front end of the flow channel can be avoided, the water temperature is too high when the back end is used for reducing heat, the heat reducing capacity of fluid is reduced (the water temperature is increased, the temperature difference is reduced, and the exchange heat is reduced), so that the temperature of the front end of the flow channel is balanced, and the temperature of a chip is increased steeply due to the fact that the heat reducing capacity is reduced after the water temperature of the back.

The flow channels 12 in the cold plate of the present invention are designed in a macro-channel mode: (1) relative to the micro-channel, the processing belongs to the precision processing range in the conventional processing, and the relative realization degree in the process is much higher; (2) the cooling medium has no strict requirement under the condition of meeting the fluid requirement, and the adaptability is good; (3) temperature subsection adjustment is easy to realize, points needing to be adjusted can be directly positioned according to the characteristics of the macro-channel flow channel, and the temperature characteristics of a certain point cannot be accurately regulated and controlled due to the multi-layer microstructure of the micro-channel.

The top sealing plate 2 and the bottom sealing plate 3 are respectively used as a topmost cold plate and a bottommost cold plate, the upper end, the lower end and the bottom of the sealed stack structure are loaded, the thickness of the sealed stack structure can be thicker than that of the middle-layer cold plate 7, other contour sizes of the sealed stack structure can be consistent with that of the middle-layer cold plate 7, and the shape of the flow channel 12 in the sealed stack structure can be the same as that of the flow channel in each layer of the middle-layer cold plate 7 and is represented. The opposite ends of the top sealing plate 2 and the bottom sealing plate 3 in the length direction are respectively provided with a water inlet 120 or a water outlet 121, the water inlet 120 is connected with the water inlet pipe 1, and the water outlet 121 is connected with the water outlet pipe 6. In this embodiment, the water inlet 120 and the water outlet 121 are respectively disposed at two opposite ends of the top sealing plate 2 and the bottom sealing plate 3, and communicate with the respective internal flow channels 12 in the through thickness direction, and respectively communicate with the water inlet 120 and the water outlet 121 of each cold plate 7 in the middle layer, and are aligned up and down (but not limited to such an up-down alignment arrangement). As an embodiment, the cooling liquid is introduced into the water inlets of the flow channels 12 of the layers (the sealing

plates

2 and 3 and the plurality of cold plates 7) from the water inlet pipe 1 through the water inlet 120 arranged on the top sealing plate 2 or the bottom sealing plate 3, and after being guided by the flow channels 12 of the layers connected in parallel, the cooling liquid flows out of the outlet pipe guiding module 100 finally connected to the water outlet 121 of the bottom sealing plate 3 or the top sealing plate 2 from the channels of the water outlets 121. The water inlet pipe 1 and the water outlet pipe 6 can also be connected to the water inlets and the water outlets of other layers of cold plates, the water inlets of the cold plates are communicated, and the water outlets of the cold plates are communicated; at least one water inlet in each layer of cold plate is externally connected with a water inlet pipe 1, and at least one water outlet is connected with a water outlet pipe 6, so that cooling liquid is respectively led into the flow channels 12 of each layer of cold plate from the water inlet pipe 1 and is discharged by the water outlet pipe 6 to take away heat.

The top of the groove of the internal flow channel of each cold plate (the middle cold plate 7, the sealing plates 2 and 3) is respectively provided with a sealing gasket 10 which is directly fastened on the top of the flow channel by a screw 23 or other fasteners, except for the water inlet and the water outlet, the flow channel notch of the flow channel is completely sealed, and each layer of cold plates is further locked, pressed and sealed by the screw 23.

The shape and the size of the sealing gasket 10 are matched with the runner notch and can be slightly larger than the runner edge, the edge clamping groove is arranged on the cold plate, the sealing gasket 10 covers the runner notch and is limited by the clamping groove, and the sealing gasket 10 is further locked with the runner edge or the screw hole 17 arranged inside through the screw 23 to lock the sealing gasket 10 on the cold plate runner to seal the runner. The sealing gasket 10 is correspondingly provided with through holes corresponding to the water inlets and water outlets of the flow passages, so that the water inlets and water outlets of the flow passages of all layers can be communicated.

The sealing gaskets 10 are respectively positioned between each layer of cold plate, the outer side of the edge of the cold plate flow passage or the flow passage is internally provided with a screw hole 17, and the sealing gaskets 10 between two layers of cold plates are locked and pressed by screws 23 to achieve the effect of sealing and fixing.

The cold plate stacking structure takes the bottom sealing plate 3 as a bearing structure, the cold plate stacking structure is assembled layer by layer upwards and laminated layer by layer, screws are screwed on the lower bearing structure through the screw holes 17 and the screws 23 reserved on each layer, and the middle sealing gasket 10 is laminated to be sealed and fixed. When the opening of the flow channel 12 faces downwards to the uppermost top sealing plate 2, the sealing gasket 10 is pressed with the sealing gasket 10 of the lower-layer cold plate. Other layers are pressed together by the lower layer sealing gasket 10 and the upper layer bottom wall. The screw hole 17 in the middle of the flow channel of the top sealing plate 2 is communicated with the water channel, so that water leakage is avoided, and the isolation plate 13 and the other layer of sealing gasket 10' are additionally arranged at the top of the top sealing plate 2 of the stack structure, so that the top screw hole structure is ensured not to leak water outwards. The partial assembly of the module can refer to fig. 2, the isolation plate 13 is fixed with the top sealing plate 2 by the screw fixing track 21, the screw fixing track 21 is staggered with the screw hole 17 in the runner, after the module is integrally assembled, the modules are only communicated end to end, the middle runners are mutually isolated, and an integral waterproof structure is made through the sealing gasket 10' to the outside, and refer to fig. 2-3 here.

In this embodiment, to avoid the occurrence of a gap between the layers, a single-layer gasket fitting structure is used inside to seal and isolate the flow channels 12 of the respective cold plates. And is pressed and fixed layer by layer through the reserved screw hole sites.

The upper surface of the cold plate 7 on the uppermost layer is covered with a sealing gasket 10, the top sealing plate 2 is pressed, a sealing gasket mounting groove 22 is formed in the middle of the top sealing plate 2, and the isolation plate 13 is clamped in the mounting groove to press a sealing gasket 10' to seal on the top sealing plate 2. The shape of the isolation plate 13 is matched with the shape and the size of the mounting groove, the isolation plate is just pressed into the mounting groove 22, and the periphery of the isolation plate is fastened between a screw or a fastener and the sealing gasket 10' on the top wall of the top sealing plate flow passage. The bottom wall of the layered sealing gasket sealing structure is separately sealed in an isolating way, and the extra isolating plate 13 reduces the water leakage risk between layers.

The layers of each layer of cold plate (the cold plate 7/the sealing plates 2 and 3) are mutually fixed together through screws or other fasteners to form an integral heat dissipation structure, and a row of surface-emitting laser chips 14 are respectively integrated on the outer wall surfaces of the same side of each cold plate and are arranged to form a surface-emitting laser chip array 4.

According to the cold plate stacking scheme of the high-power module 100, the stacked heat dissipation structure integrally formed by all layers of cold plates can form a plurality of layers of parallel macro-channel flow channels inside, and a buffer structure is formed in each flow channel; the heat conduction efficiency of each layer can be flexibly adjusted according to the chip power and the chip size, such as adjusting the length of a flow channel, a backflow structure and the like, so that the heat conduction efficiency of the single cold plate is greatly improved, and the cost is reduced.

Referring to the flow channel structure analysis shown in FIG. 5, in one non-limiting example, the high power module 100 of the present invention can solve the 120W/cm problem ²The heat dissipation requirement for high power heat density.

Referring to fig. 5, the high power module 100 of the present invention has a good heat dissipation effect, and fig. 5 is a schematic diagram of an internal flow channel of a single cold plate, for example, at normal temperature and normal pressure, the single cold plate 7 needs to release heat of 600W, and as can be seen from fig. 5, the overall temperature distribution of the single internal flow channel is uniform, and no local overheating occurs.

In the illustrated example, eight intermediate split cold plates 7, two top and

bottom plates

2, 3, and 10/15 =150 chips are used to package, which can be de-ballasted at any time, and the de-ballasting temperature is better. In the aspect of strip adding, strips can be added to 12 cold plates within the working temperature of 65 ℃ of a planned chip within the flow channel simulation limit, and a structure model of 180 chips is integrated.

The cold plate of the high-power module 100 is packaged in a strip manner, so that the size of a tool jig for integrally processing the high-power integrated module is reduced, a large cost space can be saved in subsequent maintenance, and only troubleshooting or replacement treatment needs to be carried out on a fault cold plate.

In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.

In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be a mechanical connection, and can also be an electrical connection or a connection capable of transmitting data; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and are intended to be within the scope of the invention; the scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. A high power module to face-emitting laser chip, includes many cold plates, its characterized in that: each cold plate is packaged with a plurality of surface emitting laser chips, and a plurality of cold plates are stacked to form a high-power semiconductor laser module with a stacked heat dissipation structure.

2. The high power module of claim 1, wherein:

each cold plate is packaged into an independent module;

each cold plate is provided with an electrode module;

each cold plate is packaged with a plurality of surface-emitting laser chips which are sequentially arranged, mutually connected in series and connected with the electrode module in series;

the surface-emitting laser chips encapsulated on each cold plate are arranged in a row; the surface-emitting laser chips of the plurality of cold plates are arranged in a chip array.

3. The high power module of claim 2, wherein:

the surface emitting laser chip is a COS module, comprises a surface emitting laser and a heat sink, and is integrally welded on the cold plate through the heat sink; the heat generated by the surface-emitting laser chip is transferred to the cold plate through the heat sink to be radiated;

the cold plate is a high heat conduction metal plate;

a limiting stepped groove is formed on the surface of the cold plate, and the surface-emitting laser chip is welded in the stepped groove in an aligned manner; the electrode module arranged on the cold plate has a step fall distance with the surface of the surface-emitting laser chip, so that the short circuit caused by the direct contact of the connecting wire with the cold plate is avoided.

4. The high power module of claim 2, wherein:

a collimating lens is arranged on the light emitting surface of the surface emitting laser chip to adjust the uniformity of the light beam of the surface emitting laser chip;

a collimating lens is arranged on the light emitting surface of the row of surface-emitting laser chips to adjust the uniformity of the light beams of the row of surface-emitting laser chips;

a plurality of parallel collimating lenses are arranged on the light emitting surface of the surface-emitting laser chip array to adjust the uniformity of the light beams of the surface-emitting laser chip array;

the collimating lens is fixed on one side of the cold plate, which is packaged with the surface-emitting laser chip, by a collimating lens support;

setting principle of the collimating lens: when the emitted light of the surface-emitting laser chip reaches the collimating lens, the light beam width is within the range of the action surface of the width of the lens of the collimating lens, so that the light combination efficiency and the uniformity of light emitting spots of the whole module are ensured.

5. The high power module of claim 4, wherein: setting principle of the collimating lens: the emitted light of the laser emitting chip reaches the collimating lens and is just within the lens width action face boundary, so that the light combination efficiency is ensured; when the adjacent cold plates are combined, the light beams in the upper row and the light beams in the lower row are not interfered with each other;

the two sides of the width direction of the collimating lens are only provided with allowance positions for dispensing and fixing the lens;

the emitted light of the surface-emitting laser chip is a divergent light beam;

the surface emitting laser chip is an HCSEL or VCSEL chip.

6. The high power module according to any one of claims 1 to 5, wherein:

a cooling liquid flow channel, a water inlet and a water outlet which are communicated with the flow channel are processed in each cold plate and are used for leading cooling liquid into the flow channel from the water inlet and discharging the cooling liquid from the water outlet, so that the surface emitting laser chip is cooled;

the flow channel in the cold plate is sealed by a sealing gasket; and laminating the plurality of cold plates layer by layer to compress the sealing gasket.

7. The high power module of claim 6, wherein:

the flow channels in each cold plate are independently arranged, and the flow channels in the plurality of cold plates are mutually connected in parallel; the water inlets and the water outlets of each cold plate are communicated; at least one water inlet is externally connected with a water inlet pipe to be connected with cooling liquid, and at least one water outlet is externally connected with a water outlet pipe to discharge the cooling liquid to take away heat.

8. The high power module of claim 7, wherein:

the flow channel in the cold plate is a macro-channel flow channel;

the flow channel is a slot formed by the top surface or the bottom surface of the cold plate, the slot is sealed by a sealing gasket, and each flow channel is isolated by the sealing gasket; the sealing gasket is provided with openings corresponding to the water inlets and the water outlets of the flow channels in the cold plates, so that the water inlets and the water outlets of the flow channels of the cold plates are communicated;

a bent channel is designed in the flow channel to lengthen the flow channel so as to increase the heat exchange efficiency;

a plurality of protruding fins are arranged in the flow channel to form a structure similar to a radiating fin;

a groove backflow structure is arranged in the flow channel and close to the surface-emitting laser chip.

9. The high power module of claim 8, wherein:

the flow channel in each cold plate extends along the length direction of the arrangement of the surface-emitting laser chips;

the surface emitting laser chip is arranged on the outer wall surface of the cold plate in the length direction;

further forming a groove structure on the protruding fins at the back side of the flow direction of the cooling liquid, thereby forming a groove reflow structure;

the plurality of protruding fins are also arranged in parallel, extend from one side of the packaged chip to the other side along the width direction of the cold plate, are arranged in the flow channel in a protruding manner, and are vertical to the flow direction or resist the flow of the cooling liquid at a certain angle; the other inner side wall of the flow passage opposite to the chip mounting side forms a curve corresponding to the protruding fin.

10. The high power module of claim 8, wherein:

mounting holes are arranged on the periphery of the flow channel and/or in the flow channel of each layer of cold plate, and the cold plates and the sealing gasket are matched with the cold plates through fasteners to be fastened and pressed;

the uppermost cold plate of the cold plate stack type structure is used as a top sealing plate; the bottom of top closing plate sets up the runner, and the top sets up the mounting groove, and the mounting groove diapire is provided with the mounting hole position that another layer was sealed to fill up in order to cover and sealed runner, the division board of the built-in adaptation of mounting groove, and the division board pressfitting is sealed another layer is sealed fill up and is fastened together with top closing plate to form holistic leak protection structure.