CN110783317A - Photosensitive chip packaging structure - Google Patents
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- CN110783317A CN110783317A CN201910963086.0A CN201910963086A CN110783317A CN 110783317 A CN110783317 A CN 110783317A CN 201910963086 A CN201910963086 A CN 201910963086A CN 110783317 A CN110783317 A CN 110783317A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011241 protective layer Substances 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000002120 nanofilm Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 206010070834 Sensitisation Diseases 0.000 claims 1
- 230000008313 sensitization Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002074 nanoribbon Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a photosensitive chip packaging structure, which comprises a photosensitive element, a hollow wall, a cavity and a substrate, wherein the photosensitive element is arranged on the hollow wall; a first surface and a second surface are respectively arranged on two sides of the substrate; one side of the photosensitive element is provided with a photosensitive area, the other side of the photosensitive element is provided with a bottom plate, the photosensitive area is provided with a hollow wall and a cavity side by side, the lower part of the photosensitive area is electrically connected with a welding pad, and the welding pad is used for electrically connecting an internal circuit structure of the photosensitive element with an external lug through a ceramic layer and a connecting layer; the connecting part of the cavity and the second surface is provided with a film, the film is provided with nano-grains, and the cavity is internally provided with a lens. The invention is provided with a plurality of films which can better collect and collect image information compared with the traditional method, the bottom plate is wrapped with an anti-electromagnetic interference protective layer, and the protective layer can protect the photosensitive element from being interfered by external electromagnetism when the circuit in the photosensitive element is collected.
Description
Technical Field
The invention relates to the technical field of photosensitive chip packaging, in particular to a photosensitive chip packaging structure.
Background
The light sensing element is the core of the digital camera and is also the most critical technology. The development of digital cameras is a development of light-sensitive elements. The core imaging components of the digital camera are two types: one is a widely used CCD (charge coupled) element; the other is a CMOS (complementary metal oxide semiconductor) device. In contrast to conventional cameras, which use "film" as their carrier for recording information, the "film" of digital cameras is their imaging photosensitive element.
The existing wafer-level chip size packaging technology is a technology for cutting a whole wafer into single finished chips after packaging and testing, and the size of the packaged chips is completely consistent with that of bare chips. The wafer level chip size packaging technology thoroughly subverts the modes of traditional packaging such as ceramic leadless chip carriers, organic leadless chip carriers and digital camera modules, and meets the increasingly light, small, short, thinned and low-price requirements of the market on microelectronic products. The chip size after being packaged by the wafer-level chip size packaging technology reaches high miniaturization, and the chip cost is obviously reduced along with the reduction of the chip size and the increase of the wafer size. The wafer level chip size packaging technology is a technology capable of integrating IC design, wafer manufacturing, packaging test and substrate manufacturing, is a hot spot in the current packaging field and a trend of future development, and the photosensitive chip packaging in the prior art has a poor information image acquisition effect and is easily subjected to external interference during image acquisition.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a package structure of a photo sensor chip, in which a plurality of films are disposed to better collect and collect image information than the conventional one, and an electromagnetic interference preventing protective layer is wrapped outside a bottom plate, and the protective layer can protect an internal circuit of a photo sensor from external electromagnetic interference during collection.
The photosensitive chip packaging structure comprises a photosensitive element, a hollow wall, a cavity and a substrate;
a first surface and a second surface are respectively arranged on two sides of the substrate;
one side of the photosensitive element is provided with a photosensitive area, the other side of the photosensitive element is provided with a bottom plate, the photosensitive area is provided with a hollow wall and a cavity side by side, the lower part of the photosensitive area is electrically connected with a welding pad, and the welding pad is used for electrically connecting an internal circuit structure of the photosensitive element with an external lug through a ceramic layer and a connecting layer;
the connecting part of the cavity and the second surface is provided with a film, the film is provided with nano-grains, and the cavity is internally provided with a lens.
Preferably, the first surface has an external component mounted externally thereto and the first surface has a conductive terminal mounted internally thereto.
Preferably, a film with nano-grains is arranged on the first surface or the second surface.
Preferably, the nano-grooves include a plurality of first nano-groove groups and a plurality of second nano-groove groups, and the first nano-groove groups and the second nano-groove groups are arranged in a crossed manner.
Preferably, an electromagnetic interference preventing protective layer is wrapped outside the bottom plate and used for protecting the internal circuit of the photosensitive element.
Preferably, the cavity comprises a first cavity and a second cavity, and the first cavity and the second cavity are identical in structure.
Preferably, the thin film may be an organic film or a nano film, in particular.
Preferably, the material of the substrate may be transparent glass.
Preferably, the material of the hollow wall can be a ceramic material, an organic material, a glass material or a silicon material.
The beneficial effects of the invention are as follows:
(1) because the cavity in the photosensitive chip packaging structure is provided with the nano-texture groups positioned on the film, external light is divided into light rays with different polarization directions by different nano-texture groups before entering the pixel unit of the photosensitive chip, and then the light rays are received and converted by the pixel unit, namely a plurality of images with different angles are obtained through one-time imaging, information of the plurality of images is correspondingly distributed in one image according to the distribution mode of different nano-texture groups, and the photosensitive chip is provided with a plurality of films which can better collect and collect image information compared with the traditional photosensitive chip;
(2) the bottom plate is wrapped with an electromagnetic interference prevention protective layer which can protect the photosensitive element internal circuit from being interfered by external electromagnetic waves during collection.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a photo sensor chip package structure according to the present invention;
FIG. 2 is a schematic diagram of the structure of the film distribution of FIG. 1;
fig. 3 is a schematic structural view illustrating the connection between the cavity and the cavity wall in fig. 1.
In the figure: 1-a first surface, 2-a substrate, 3-a second surface, 4-a photosensitive area, 5-a photosensitive element, 6-a bottom plate, 7-a first cavity, 8-a hollow wall, 9-a second cavity, 10-a film, 101-a first nano-grain group, 102-a second nano-grain group, 11-a lens, 12-a bonding pad, 13-a ceramic layer, 14-a connecting layer, 15-a bump, 16-a protective layer, 17-a conductive terminal, 18-an external element.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
Examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Referring to fig. 1-3, a photo sensor chip package structure includes a photo sensor element 5, a cavity wall 8, a cavity and a substrate 2;
the photosensitive element 5 may be a CCD image sensor or a CMOS image sensor;
the two sides of the substrate 2 are respectively provided with a first surface 1 and a second surface 3;
one side of the photosensitive element 5 is provided with a photosensitive area 4, the other side of the photosensitive element is provided with a bottom plate 6, hollow walls 8 and cavities are arranged on the photosensitive area 4 side by side, the lower part of the photosensitive area 4 is electrically connected with a welding pad 12, and the welding pad 12 is used for electrically connecting the internal circuit structure of the photosensitive element 5 with an external bump 15 through a ceramic layer 13 and a connecting layer 14;
the photosensitive region 4 is provided with a pixel unit, a lens 11 is manufactured on the pixel unit, the pixel unit can comprise a color film layer, a photodiode and other structures, the color film layer is positioned on the photodiode, the lens 11 structure is positioned on the color film layer, a MOS (metal oxide semiconductor) tube, a floating diffusion region, an amplifying circuit, a corresponding interconnection structure and the like which are matched with the photodiode can be formed in the sensory element, and the semiconductor devices and the structures are electrically connected with the photodiode on the one hand so as to process a photoelectric signal generated by the photodiode.
A thin film 10 is arranged at the joint of the cavity and the second surface 3, nano-grains are arranged on the thin film 10, and a lens 11 is arranged in the cavity;
the first surface 1 is externally mounted with external components 18 and the first surface 1 is internally mounted with conductive terminals 17.
The first surface 1 or the second surface 3 is provided with a film with nano grains.
The nano-stripes include a plurality of first nano-stripe groups 101 and a plurality of second nano-stripe groups 102, and the first nano-stripe groups 101 are arranged to intersect with the second nano-stripe groups 102.
The wavelength range of visible light is usually 380nm to 780nm, and therefore, the widths of the first nanoribbon group 101 and the second nanoribbon group 102 can be set to be widths such as twice, one time, one half and one fourth of the corresponding visible light wavelength, so that the diffraction effect on the visible light is realized, and it is ensured that different nanoribbon groups receive light rays at different angles, or the light rays are converted into polarized light rays at different angles.
After the image information is obtained, the image display can be realized through corresponding display processing, and the display processing can be realized by adopting a corresponding stereoscopic electronic display device for display or by making a corresponding image into a solid image.
The outer portion of the bottom plate 6 is wrapped with an electromagnetic interference prevention protective layer 16, the protective layer 16 is used for protecting an internal circuit of the photosensitive element 5, the cavity comprises a first cavity 7 and a second cavity 9, the first cavity 7 and the second cavity 9 are identical in structure, the thin film 10 can be an organic film or a nano film, the substrate 2 can be made of transparent glass, and the hollow wall 8 can be made of ceramic materials, organic materials, glass materials or silicon materials.
Because the cavity in the photosensitive chip packaging structure is provided with the nano-texture groups positioned on the film 10, external light is divided into light rays with different polarization directions by different nano-texture groups before entering the pixel unit of the photosensitive chip, and then the light rays are received and converted by the pixel unit, namely, a plurality of images with different angles are obtained by one-time imaging, information of the plurality of images is correspondingly distributed in one image according to the distribution mode of different nano-texture groups, and the photosensitive chip is provided with the plurality of films 10, so that the image information can be better collected compared with the traditional photosensitive chip;
the bottom plate 6 is externally wrapped with an electromagnetic interference prevention protective layer 16, and the protective layer 16 can protect the photosensitive element 5 from external electromagnetic interference during internal circuit acquisition.
The standard parts used in the invention can be purchased from the market, the special-shaped parts can be customized according to the description of the specification and the accompanying drawings, the specific connection mode of each part adopts conventional means such as bolts, rivets, welding and the like mature in the prior art, the machinery, parts and equipment adopt conventional models in the prior art, and the circuit connection adopts the conventional connection mode in the prior art, and the details are not described, and the content not described in detail in the specification belongs to the prior art known by persons skilled in the art.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (9)
1. The utility model provides a sensitization chip packaging structure which characterized in that: the device comprises a photosensitive element, a hollow wall, a cavity and a substrate;
a first surface and a second surface are respectively arranged on two sides of the substrate;
one side of the photosensitive element is provided with a photosensitive area, the other side of the photosensitive element is provided with a bottom plate, the photosensitive area is provided with a hollow wall and a cavity side by side, the lower part of the photosensitive area is electrically connected with a welding pad, and the welding pad is used for electrically connecting an internal circuit structure of the photosensitive element with an external lug through a ceramic layer and a connecting layer;
the connecting part of the cavity and the second surface is provided with a film, the film is provided with nano-grains, and the cavity is internally provided with a lens.
2. The photosensitive chip package structure of claim 1, wherein: an external element is mounted on the exterior of the first surface, and a conductive terminal is mounted on the interior of the first surface.
3. The photosensitive chip package structure of claim 1, wherein: and a film with nano grains is arranged on the first surface or the second surface.
4. The photosensitive chip package structure of claim 1, wherein: the nano-stripes comprise a plurality of first nano-stripe groups and a plurality of second nano-stripe groups, and the first nano-stripe groups and the second nano-stripe groups are arranged in a crossed mode.
5. The photosensitive chip package structure of claim 1, wherein: the bottom plate is externally wrapped with an electromagnetic interference prevention protective layer which is used for protecting an internal circuit of the photosensitive element.
6. The photosensitive chip package structure of claim 1, wherein: the cavity comprises a first cavity and a second cavity, and the first cavity and the second cavity are identical in structure.
7. The photosensitive chip package structure of claim 1, wherein: the thin film may be specifically an organic film or a nano film.
8. The photosensitive chip package structure of claim 1, wherein: the material of the substrate may be transparent glass.
9. The photosensitive chip package structure of claim 1, wherein: the material of the hollow wall can be ceramic material, organic material, glass material or silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910963086.0A CN110783317A (en) | 2019-10-11 | 2019-10-11 | Photosensitive chip packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910963086.0A CN110783317A (en) | 2019-10-11 | 2019-10-11 | Photosensitive chip packaging structure |
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| Publication Number | Publication Date |
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| CN110783317A true CN110783317A (en) | 2020-02-11 |
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| CN201910963086.0A Pending CN110783317A (en) | 2019-10-11 | 2019-10-11 | Photosensitive chip packaging structure |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221963A (en) * | 2007-01-08 | 2008-07-16 | 采钰科技股份有限公司 | Electronic assembly for image sensor device and fabrication method thereof |
| CN102005437A (en) * | 2009-09-03 | 2011-04-06 | 采钰科技股份有限公司 | Electronic assembly for an image sensing device and wafer-level lens set |
| CN104637967A (en) * | 2015-02-13 | 2015-05-20 | 苏州晶方半导体科技股份有限公司 | Packaging method and packaging structure |
| CN104851899A (en) * | 2015-05-19 | 2015-08-19 | 苏州晶方半导体科技股份有限公司 | Image sensor packaging structure and packaging method thereof |
| CN106449546A (en) * | 2016-09-26 | 2017-02-22 | 苏州晶方半导体科技股份有限公司 | Image sensor chip packaging structure and packaging method thereof |
| CN106935606A (en) * | 2017-05-11 | 2017-07-07 | 北京工业大学 | A kind of encapsulating structure of image sensor |
-
2019
- 2019-10-11 CN CN201910963086.0A patent/CN110783317A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221963A (en) * | 2007-01-08 | 2008-07-16 | 采钰科技股份有限公司 | Electronic assembly for image sensor device and fabrication method thereof |
| CN102005437A (en) * | 2009-09-03 | 2011-04-06 | 采钰科技股份有限公司 | Electronic assembly for an image sensing device and wafer-level lens set |
| CN104637967A (en) * | 2015-02-13 | 2015-05-20 | 苏州晶方半导体科技股份有限公司 | Packaging method and packaging structure |
| CN104851899A (en) * | 2015-05-19 | 2015-08-19 | 苏州晶方半导体科技股份有限公司 | Image sensor packaging structure and packaging method thereof |
| CN106449546A (en) * | 2016-09-26 | 2017-02-22 | 苏州晶方半导体科技股份有限公司 | Image sensor chip packaging structure and packaging method thereof |
| CN106935606A (en) * | 2017-05-11 | 2017-07-07 | 北京工业大学 | A kind of encapsulating structure of image sensor |
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Application publication date: 20200211 |
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