CN110770364A

CN110770364A - Magnetron sputtering cathode system

Info

Publication number: CN110770364A
Application number: CN201780092148.4A
Authority: CN
Inventors: 王三军; 刘圣烈; 黄维邦; 余晓军
Original assignee: Shenzhen Royole Technologies Co Ltd
Current assignee: Shenzhen Royole Technologies Co Ltd
Priority date: 2017-12-26
Filing date: 2017-12-26
Publication date: 2020-02-07
Also published as: WO2019127006A1

Abstract

A magnetron sputtering cathode system (10), the magnetron sputtering cathode system (10) comprising a target (12) and a plurality of electromagnetic system units (14) arranged at one side of the target (12). Each electromagnetic system unit (14) operates independently and is capable of generating different magnetic effects, and magnetic field lines of the electromagnetic system unit (14) pass through a sputtering surface (122) of the target (12).

Description

Magnetron sputtering cathode system

Technical Field

The invention relates to the field of sputtering coating, in particular to a magnetron sputtering cathode system.

Background

The existing magnetron sputtering system adopts permanent magnets, and the operation price is relatively low. However, the magnetic field intensity generated by the permanent magnet is fixed, and the magnetic field acting on the target changes along with the reduction of the thickness of the target during the process from the initial stage to the later stage of the use of the target, so that the uniformity of the film thickness, the electrical performance, the optical performance and the like are poor, the shutdown maintenance of the magnetron sputtering system is required to be carried out regularly, and the equipment operation is influenced.

Disclosure of Invention

The embodiment of the invention provides a magnetron sputtering cathode system.

The magnetron sputtering cathode system of the embodiment of the invention comprises:

a target material; and

the electromagnetic system units are arranged on one side of the target, each electromagnetic system unit works independently and can generate different magnetic force effects, and magnetic field lines of the electromagnetic system units penetrate through the sputtering surface of the target.

The magnetron sputtering cathode system comprises a plurality of electromagnetic system units, each electromagnetic system unit works independently and can generate different magnetic effects, so that the magnetic fields acting on different areas of the target can be controlled independently, the coating quality is improved, and sufficient utilization of equipment is ensured.

Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic structural diagram of a magnetron sputtering cathode system according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a partial structure of a magnetron sputtering cathode system according to an embodiment of the present invention;

FIG. 3 is a schematic structural view of an E-type magnetic element of an electromagnetic system unit of a magnetron sputtering cathode system according to an embodiment of the invention;

FIG. 4 is a top view of a magnetron sputtering cathode system according to an embodiment of the invention;

description of the main elements and symbols:

magnetron sputtering cathode system 10, target 11, sputtering surface 112, electromagnetic system unit 12, magnetic part 121, coil 122, first electromagnetic system unit 123, second electromagnetic system unit 124, support plate 15, slide rail 152, connecting piece 17, push rod 171, cylinder 172, stator 173, and mover 174.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

In the description of the embodiments of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the embodiments of the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the embodiments of the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "a plurality" means two or more unless specifically limited otherwise.

In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrally connected; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. Specific meanings of the above terms in the embodiments of the present invention can be understood by those of ordinary skill in the art according to specific situations.

In embodiments of the invention, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise the first and second features being in direct contact, or the first and second features being in contact, not directly, but via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The following disclosure provides many different embodiments or examples for implementing different configurations of embodiments of the invention. In order to simplify the disclosure of embodiments of the invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, embodiments of the invention may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed.

Referring to fig. 1, a magnetron sputtering cathode system 10 according to an embodiment of the present invention includes a target 11 and a plurality of electromagnetic system units 12 disposed on one side of the target 11. Each of the magnet system units 12 operates independently and is capable of generating different magnetic effects, the magnetic field lines of the magnet system units 12 passing through the sputtering face 112 of the target 11.

It is understood that magnetron sputtering is a Physical Vapor Deposition (PVD) technique used in sputter coating processes to produce a variety of materials such as metals, semiconductors, insulators, and the like. The working principle of the magnetron sputtering cathode system 10 is as follows: the magnetron sputtering cathode system 10 is placed in an argon (or other low-pressure inert gas) environment, sufficient voltage is applied between the magnetron sputtering cathode system 10 and an anode substrate to form an electric field with certain strength, electrons fly to the substrate under the action of the electric field and collide with argon atoms of argon gas to ionize the argon atoms to generate argon ions and new electrons, the new electrons fly to the substrate, and the argon ions carry high energy to bombard the sputtering surface 112 of the target 11 under the action of the electric field to sputter the target 11. Neutral target atoms or molecules in the sputtering particles are deposited on the substrate to complete the coating of the substrate. Because the magnetron sputtering cathode system 10 performs high-speed sputtering under low pressure, the ionization rate of argon or other low-pressure inert gases must be effectively increased to ensure the quality of the sputtered coating, so that the magnetron sputtering cathode system 10 introduces a magnetic field, and the plasma density is increased by utilizing the confinement of the magnetic field to charged particles to increase the sputtering rate.

The current magnetron sputtering cathode system adopts permanent magnets, and the operation price is relatively low. However, the magnetic field intensity generated by the permanent magnet is fixed, and the magnetic field acting on the target changes along with the reduction of the thickness of the target during the process from the initial stage to the later stage of the use of the target, so that the uniformity of the film thickness, the electrical performance, the optical performance and the like are poor, the shutdown maintenance of the magnetron sputtering system is required to be carried out regularly, and the equipment operation is influenced.

The magnetron sputtering cathode system 10 of the embodiment of the invention comprises a plurality of electromagnetic system units 12, each electromagnetic system unit 12 works independently and can generate different magnetic effects, so that the magnetic fields acting on different areas of the target 11 can be controlled independently, the coating quality is improved, and sufficient utilization of equipment is ensured.

Specifically, the target 11 may be a planar target, and more specifically, may be a circular planar target or a rectangular planar target having a certain thickness. The target 11 may be made of metal materials such as aluminum, copper, iron, titanium, nickel, magnesium, chromium, zinc, silver, cobalt, etc., or binary alloy materials such as nickel-chromium, nickel-iron, nickel-cobalt, nickel-zirconium, nickel-aluminum, nickel-copper, etc., or multi-element alloy materials such as cobalt-iron-boron, copper-indium-gallium, etc.; or made of a ceramic material, without limitation. In some embodiments, the plurality of electromagnetic system units 12 have the same polarity arrangement, and the plurality of electromagnetic system units 12 are disposed in parallel and at equal intervals on one side of the sputtering surface 112 of the target 11. The sputtering surface 112 of the target 11 includes a plurality of strip-shaped regions, and the plurality of electromagnetic system units 12 respectively correspond to the plurality of regions of the sputtering surface 112 so as to be capable of respectively generating a magnetic effect on each region of the sputtering surface 112. Further, the electromagnetic system unit 12 can adjust the magnetic force effect acting on each region on line according to the thickness of the target 11 in the region. The magnetic effect includes magnetic field intensity, action position, magnetic field direction and the like. For example, in the use process of the target 11, when the thickness of the target 11 in a certain area is reduced, which results in that the distance between the target 11 in the area and the electromagnetic system unit 12 corresponding to the area is increased, and further the magnetic field intensity acting on the area is weakened, the sputtering rate is reduced, and the film thickness is reduced, the electromagnetic system unit 12 corresponding to the area is adjusted on line to increase the magnetic field intensity acting on the area, so that the film thickness is uniform, the film coating quality is improved, the shutdown maintenance of the magnetron sputtering cathode system 10 is not needed, the material loss and the labor input cost in the shutdown and recovery process are saved, and the production efficiency is improved; while preventing premature replacement of the target 11 (e.g., replacement of the target 11 when the quality of the coating is degraded), resulting in poor utilization of the target 11 as a whole. The utilization rate of the existing magnetron sputtering system adopting the permanent magnet for the target is only about 20 percent, while the utilization rate of the magnetron sputtering cathode system 10 of the embodiment of the invention for the target 11 is at least more than 40 percent, thereby greatly improving the utilization rate of the target 11.

Referring to fig. 2, in some embodiments, each electromagnetic system unit 12 includes a magnetic member 121 and a coil 122 surrounding at least a portion of the magnetic member 121.

Specifically, the electromagnetic system unit 12 generates magnetism after the coil 122 is energized. The number of turns of the coil 122 may be matched to the power of the electromagnetic system unit 12. The magnetic part 121 may be made of soft iron, such as iron-silicon alloy or soft magnetic ferrite. The magnetic member 121 made of soft iron can be demagnetized immediately after the coil 122 is deenergized, so that the intensity of the magnetic field generated by the electromagnetic system unit 12 can be changed in time by changing the magnitude of the current flowing through the coil 122.

In certain embodiments, magnetron sputtering cathode system 10 further includes a power supply and a controller coupled to the power supply. A power source is connected to the coil 122 and a controller is used to control the current of the power source through the coil 122.

In this manner, the magnetic field generated by the electromagnetic system unit 12 may be controlled by controlling the current flowing through the coil 122 from the power supply, and specifically, the strength of the magnetic field generated by the electromagnetic system unit 12 may be adjusted by controlling the magnitude of the current flowing through the coil 122 from the power supply, and the direction of the magnetic field generated by the electromagnetic system unit 12 may be controlled by controlling the direction of the current flowing through the coil 122 from the power supply.

For example, when the thickness of the target 11 in a certain area is reduced, which results in an increase in the distance between the target 11 in the certain area and the electromagnetic system unit 12 corresponding to the certain area, and further the magnetic field intensity acting on the certain area is weakened, the sputtering rate is reduced, and the film thickness is reduced, the controller controls the current flowing through the coil 122 of the electromagnetic system unit 12 corresponding to the certain area to be increased by the power supply, so as to increase the magnetic field intensity acting on the certain area, and make the film thickness uniform. It is to be noted that, in the embodiment of the present invention, the coils 122 of the respective electromagnetic system units 12 are connected to the power supply through separate loops, respectively, to achieve separate control of the current in the coils 122 of the respective electromagnetic system units 12.

In some embodiments, magnetic component 121 comprises an E-shaped magnetic element (as shown in fig. 3) or a U-shaped (i.e., shoe-shaped) magnetic element.

It is understood that the magnetic member 121 is more easily magnetized by making it E-shaped or U-shaped.

Specifically, the number of the E-shaped magnetic elements or the U-shaped magnetic elements may be plural, and the magnetic member 121 is formed by stacking a plurality of the E-shaped magnetic elements or the U-shaped magnetic elements in a first direction, where the first direction is a connecting line direction between the plurality of electromagnetic system units 12. Because the magnetron sputtering cathode system 10 performs high-speed sputtering under low pressure, the ionization rate of argon or other low-pressure inert gases must be effectively increased to ensure the quality of the sputtered coating. The E-shaped magnetic elements or the U-shaped magnetic elements stacked along the first direction increase the magnetic field strength of the electromagnetic system unit 12, and the magnetic field is used for restraining charged particles, so that sufficient energy can be carried when argon ions impact the target 11, the target 11 is sputtered, and the situation that the electron spiral running radius is reduced when the magnetic field strength is small is avoided, so that the probability of collision with argon atoms is correspondingly reduced, and the sputtering deposition rate is reduced.

Referring to fig. 3, when the magnetic member 121 includes an E-type magnetic element, each of the electromagnetic system units 12 includes an S pole and N poles located at both sides of the S pole. In two adjacent electromagnetic system units 12, for example, the first electromagnetic system unit 123 and the second electromagnetic system unit 124, the N pole of the first electromagnetic system unit 123 is adjacent to the N pole of the second electromagnetic system unit 124, and a line connecting the N pole of the first electromagnetic system unit 123 and the N pole of the second electromagnetic system unit 124 is perpendicular to each electromagnetic system unit 12.

Referring to fig. 1, in some embodiments, the magnetron sputtering cathode system 10 further includes a support plate 15, the support plate 15 being opposite to the target 11. The plurality of electromagnetic system units 12 are disposed at intervals in the first direction on the support plate 15, and the plurality of electromagnetic system units 12 are located between the target 11 and the support plate 15.

In the embodiment of the present invention, the support plate 15 is parallel to the sputtering surface 112, and the shape of the support plate 15 may correspond to the shape of the target 11. Taking the support plate 15 as a rectangle as an example, the first direction (i.e. the direction of the connecting line between the plurality of electromagnetic system units 12) is the length direction of the support plate 15. The plurality of electromagnetic system units 12 may be disposed on the support plate 15 in parallel and at equal intervals in the first direction.

In certain embodiments, magnetron sputtering cathode system 10 further includes a drive member coupled to support plate 15. The driving member is used for driving the support plate 15 to move along a second direction, which is perpendicular to the sputtering surface 112. Still taking the support plate 15 as an example of a rectangle, the second direction is a direction perpendicular to the support plate 15.

It can be understood that the thickness of the target 11 is gradually reduced in the magnetron sputtering process until the target 11 is broken down or completely exhausted, so that the distance between the target 11 and the electromagnetic system unit 12 is changed (specifically gradually increased) along with the reduction of the thickness of the target 11, and thus the magnetic effect on the target 11 is weakened, the rate and the number of sputtered particles are reduced, and the deposition rate is slowed, which affects the coating efficiency. For this reason, the operator generally adjusts the deposition time according to the amount of change in the distance between the target 11 and the electromagnetic system unit 12, i.e., overcomes the problem of the deposition rate becoming slow by extending the deposition time during magnetron sputtering. However, this approach can increase the difficulty of the operator in writing the process parameters.

In the embodiment of the invention, the driving member can drive the supporting plate 15 to move towards or away from the target 11 according to the distance between the target 11 and the electromagnetic system unit 12, so that the distance between the target 11 and the electromagnetic system unit 12 is kept constant at a preset value in the magnetron sputtering process, thereby improving the deposition rate and further ensuring the coating efficiency. The distance between the target 11 and the electromagnetic system unit 12 is the distance between the sputtering surface 112 of the target 11 and the support plate 15, and the predetermined value is the distance corresponding to the process result of obtaining the desired film uniformity, deposition rate, etc. The driving member may be a servo motor or a stepping motor, etc. In other embodiments, the driving member may also be used to drive the support plate 15 to move in the first direction and/or the third direction, which is not limited herein.

In some embodiments, the magnetron sputtering cathode system 10 further includes a plurality of retractable connectors 17, the plurality of connectors 17 respectively correspond to the plurality of electromagnetic system units 12, and one end of each connector 17 is disposed on the support plate 15 and the other end is connected to the electromagnetic system unit 12.

In the present embodiment, the electromagnetic system unit 12 is disposed on the support plate 15 through the connection member 17. The telescopic direction of the connecting piece 17 is the second direction, and the connecting piece 17 drives the electromagnetic system unit 12 to move towards or away from the target 11. It can be understood that the driving member drives the supporting plate 15 to drive the plurality of electromagnetic system units 12 to move towards or away from the target 11 simultaneously according to the distance between the target 11 and the electromagnetic system units 12, and the connecting member 17 drives the electromagnetic system unit 12 corresponding to a certain region to move towards or away from the target 11 individually according to the thickness of the target 11 of the certain region, so as to achieve the fine adjustment of the sub-region of the distance between the target 11 and the electromagnetic system unit 12.

Referring to fig. 2 (a), in some embodiments, the connecting member 17 includes a push rod 171 and a cylinder 172, one end of the push rod 171 is disposed in the cylinder 172, and the other end of the push rod 171 is connected to the electromagnetic system unit 12. The cylinder 172 is used to drive the push rod 171 to move in the second direction to drive the electromagnetic system unit 12 to move toward or away from the target 11.

Referring to fig. 2 (b), in some embodiments, the connecting member 17 is a driving motor, the connecting member 17 includes a stator 173 and a retractable mover 174, one end of the mover 174 is disposed in the stator 173, and the other end of the mover 174 is connected to the electromagnetic system unit 12. The stator 173 is used to drive the mover 174 to extend and contract in the second direction to drive the electromagnetic system unit 12 to move toward or away from the target 11. The driving motor may be a magnetostrictive motor or a piezoelectric motor.

Referring to fig. 4, in some embodiments, the magnetron sputtering cathode system 10 further includes a plurality of connectors 17, and the plurality of connectors 17 respectively correspond to the plurality of electromagnetic system units 12. The support plate 15 includes a plurality of slide rails 152, the plurality of slide rails 152 are disposed at intervals in the first direction, and the extending direction of each slide rail 152 is the third direction. The plurality of slide rails 152 correspond to the plurality of electromagnetic system units 12. One end of each link 17 is slidably disposed on the slide rail 152, and the other end is connected to the electromagnetic system unit 12.

Specifically, taking the support plate 15 as a rectangle as an example, the third direction may be a width direction of the support plate 15, and the third direction is perpendicular to the first direction. The link 17 may be the above-described link having the telescopic function or a link having no telescopic function. The link 17 can slide in the third direction along the slide rail 152.

When the thickness of the target 11 in a certain region along the third direction is not uniform, for example, the region includes a plurality of sub-regions distributed along the third direction (in this case, the plurality of sub-regions correspond to one electromagnetic system unit 12), and the thickness of the target 11 in one sub-region is reduced and is smaller than the thickness of the target 11 in the other sub-regions, which results in the distance between the target 11 in the sub-region and the electromagnetic system unit 12 corresponding to the region being increased, and further the magnetic field strength acting on the sub-region is reduced, the sputtering rate is reduced, and the film thickness is reduced, then the motor (or other driving device) of the magnetron sputtering cathode system 10 drives the connecting member 17 to slide along the sliding track 152 (i.e. along the third direction) to the position corresponding to the sub-region, and drives the electromagnetic system unit 12 corresponding to the region to move to the position corresponding to the sub-region, so as to reduce the distance between the target 11 in the sub-region and the electromagnetic, thereby increasing the magnetic field intensity acting on the sub-region and making the film thickness uniform.

Further, when the connecting member 17 is a telescopic connecting member, the connecting member 17 can also move towards (i.e. along the second direction) the target 11 as required to further reduce the distance between the target 11 of the sub-region and the electromagnetic system unit 12 corresponding to the sub-region, and increase the magnetic field intensity acting on the sub-region, so that the film thickness is uniform.

In the above embodiment, the magnetron sputtering cathode system 10 may further include a thickness measuring device for detecting the thickness of the target 11, and the thickness measuring device may be an eddy current sensor.

In the description herein, references to the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example" or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and alternate implementations are included within the scope of the preferred embodiment of the present invention in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present invention.

The logic and/or steps represented in the flowcharts or otherwise described herein, such as an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processing module-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection having one or more wires (control method), a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.

It should be understood that portions of embodiments of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.

It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and when the program is executed, the program includes one or a combination of the steps of the method embodiments.

In addition, functional units in the embodiments of the present invention may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.

The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and those skilled in the art can make changes, modifications, substitutions and alterations to the above embodiments within the scope of the present invention.

Claims

A magnetron sputtering cathode system, comprising:

a target material; and

the electromagnetic system units are arranged on one side of the target, each electromagnetic system unit works independently and can generate different magnetic force effects, and magnetic field lines of the electromagnetic system units penetrate through the sputtering surface of the target.
The magnetron sputtering cathode system of claim 1 wherein each of the electromagnetic system units comprises a magnetic component and a coil surrounding at least a portion of the magnetic component.
The magnetron sputtering cathode system of claim 2 further comprising a power source connected to the coil and a controller connected to the power source for controlling the current flowing from the power source through the coil.
The magnetron sputtering cathode system of claim 2, wherein the magnetic component comprises an E-shaped magnetic element or a U-shaped magnetic element.
The magnetron sputtering cathode system according to claim 1, further comprising a support plate opposing the target, wherein the plurality of electromagnetic system units are disposed on the support plate at intervals in a first direction, and wherein the plurality of electromagnetic system units are located between the target and the support plate.
The magnetron sputtering cathode system of claim 5 further comprising a drive member coupled to the support plate, the drive member configured to drive the support plate in a second direction perpendicular to the sputtering surface.
The magnetron sputtering cathode system according to claim 5, further comprising a plurality of retractable connecting members respectively corresponding to the plurality of electromagnetic system units, wherein one end of each connecting member is disposed on the supporting plate, and the other end thereof is connected to the electromagnetic system unit.
The magnetron sputtering cathode system according to claim 7, wherein the connecting member comprises a push rod and a cylinder, one end of the push rod is arranged in the cylinder, and the other end of the push rod is connected with the electromagnetic system unit; or

The connecting piece is a driving motor and comprises a stator and a telescopic rotor, one end of the rotor is arranged in the stator, and the other end of the rotor is connected with the electromagnetic system unit.
The magnetron sputtering cathode system according to claim 5, further comprising a plurality of connecting members respectively corresponding to the plurality of electromagnetic system units, wherein the support plate includes a plurality of sliding rails arranged at intervals in the first direction, each of the sliding rails extends in a third direction, the plurality of sliding rails correspond to the plurality of electromagnetic system units, and one end of each of the connecting members is slidably arranged on the sliding rail while the other end thereof is connected to the electromagnetic system unit.
The magnetron sputtering cathode system of claim 9, wherein the first direction is perpendicular to the third direction.