CN110767816A - Perovskite LED for alternating current driving and preparation method thereof - Google Patents

Perovskite LED for alternating current driving and preparation method thereof Download PDF

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Publication number
CN110767816A
CN110767816A CN201911201116.0A CN201911201116A CN110767816A CN 110767816 A CN110767816 A CN 110767816A CN 201911201116 A CN201911201116 A CN 201911201116A CN 110767816 A CN110767816 A CN 110767816A
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perovskite
layer
alternating current
led
prepared
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CN201911201116.0A
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郭太良
胡海龙
李福山
鞠松蔓
陈耿旭
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Fuzhou University
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Fuzhou University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The invention relates to an alternating current driven perovskite LED and a preparation method thereof, wherein the alternating current driven perovskite LED comprises an anode layer, a hole transmission layer, a perovskite luminous layer, an electron transmission layer and a cathode layer which are sequentially laminated on a substrate from bottom to top; and an alternating current power supply is added at two ends of the cathode layer and the anode layer to realize the alternating current driven perovskite LED. The hole transport layer and the luminescent layer can be prepared by a solution method, the operation is simple, and the production cost can be reduced to a certain extent; by changing the components of the perovskite material, the device can emit light in multiple colors; the brightness of the perovskite LED can be adjusted by adjusting the frequency.

Description

Perovskite LED for alternating current driving and preparation method thereof
Technical Field
The invention relates to the field of perovskite LED luminescence, in particular to a perovskite LED for alternating current driving and a preparation method thereof.
Background
The luminescence of the traditional II-VI family quantum dots (such as CdSe, InP, InAs and the like) depends on quantum confinement effect to a great extent, the luminescence position changes along with the change of the size of the quantum dots, the specific surface area is large, the density of surface defects is large, and the cladding treatment is usually carried out in order to improve the quantum yield. The perovskite luminescent material can effectively overcome the defects of the traditional quantum dots, the quantum confinement effect is relatively weak, the size change and the surface defect state cannot generate great influence on the luminescent characteristics of the perovskite luminescent material, and the perovskite luminescent material can achieve the quantum yield close to 100% without carrying out cladding treatment.
The perovskite material LED device becomes one of powerful competitors of next generation high resolution display equipment due to the advantages of narrow light-emitting spectrum, wide color gamut, low preparation cost, high efficiency and the like. Over the course of years, the External Quantum Efficiency (EQE) of perovskite material LED devices has exceeded 20%, but from the point of view of device structure, perovskite LEDs are dc-driven devices, which can only emit light when a dc voltage is applied across the device. However, the power source used in real life is usually 220V, 50Hz alternating current, and in order to make the perovskite LED emit light normally, an ac-dc conversion device is further provided to the device, thereby resulting in complexity of the system.
Disclosure of Invention
In view of the above, the present invention provides an ac-driven perovskite LED and a method for manufacturing the same, which solve the problem that the existing dc-driven perovskite LED cannot directly operate in an environment of 220V and 50Hz, and an ac-dc conversion device is required to be configured, thereby increasing the complexity of the system.
In order to achieve the purpose, the invention adopts the following technical scheme:
a perovskite LED for alternating current driving comprises an anode layer, a hole transmission layer, a perovskite luminous layer, an electron transmission layer and a cathode layer which are sequentially laminated on a substrate from bottom to top; and an alternating current power supply is added at two ends of the cathode layer and the anode layer to realize the alternating current driven perovskite LED.
Further, the perovskite luminescent layer adopts one or a mixed structure of perovskite quantum dots and perovskite thin films.
Further, the perovskite quantum dot and the perovskite thin film comprise ABX3、A4BX6Or AB2X5The structural system of (1), wherein A is an inorganic metal ion, an amine organic group or a mixture of the inorganic metal ion and the amine organic group; b is lead, antimony, manganese, tellurium or tin; the halogen X is one or more of F, Br, I and Cl.
Furthermore, the perovskite luminescent layer is prepared by a vacuum evaporation method or a solution method.
Further, the solution method includes a spin coating method, a dip coating method, a blade coating method, a casting method, a screen printing method, a spray coating method, and an inkjet printing method.
Further, the anode layer is an ITO conductive film prepared by magnetron sputtering; the cathode is made of a metal material prepared by a vacuum evaporation method.
Further, the metal material comprises one or alloy of Au, Ag, Cu and Al and a laminated structure.
Further, the substrate base plate is a rigid substrate base plate or a flexible substrate base plate.
Further, the frequency range of the alternating current power supply is 1Hz-20 MHz; the waveform of the alternating current power supply is one of sine wave, triangular wave, square wave and pulse.
A method of making a perovskite LED for ac driving, comprising the steps of:
step S1, obtaining an anode substrate through the ITO conductive film prepared by magnetron sputtering, and cleaning;
step S2, depositing a hole transport layer on the cleaned anode substrate by a solution method;
step S3, depositing a layer of perovskite quantum dot solution synthesized by a high-temperature injection method on the hole transport layer by a solution method or a vacuum evaporation method to obtain a perovskite luminescent layer;
step S4, depositing an electron transport layer on the perovskite luminescent layer, wherein the electron transport layer is TPBi prepared by a vacuum evaporation method;
and S5, depositing a cathode layer on the electron transmission layer, wherein the cathode layer is Al/LiF prepared by a vacuum evaporation method, and the perovskite LED for alternating current driving is obtained.
Compared with the prior art, the invention has the following beneficial effects:
1. the hole transport layer and the luminescent layer can be prepared by a solution method, the operation is simple, and the production cost can be greatly reduced.
2. The invention can adjust the brightness of the perovskite LED under the limited voltage or power by adjusting the frequency.
3. The invention can directly work in the environment of 220V and 50Hz, and can effectively solve the problem that the existing direct current driving perovskite LED can not directly work in the environment of 220V and 50Hz, and needs to be provided with an alternating current-direct current conversion device, thereby increasing the complexity of the system.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of an AC-driven perovskite LED structure provided by an embodiment of the present invention;
in the figure: 100-substrate, 101-anode layer, 102-hole transport layer, 103-light emitting layer, 104-electron transport layer, 105-cathode layer.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
Referring to fig. 1, the present invention provides an ac-driven perovskite LED, including an anode layer, a hole transport layer, a perovskite light emitting layer, an electron transport layer, and a cathode layer sequentially stacked on a substrate from bottom to top; and an alternating current power supply is added at two ends of the cathode layer and the anode layer to realize the alternating current driven perovskite LED.
In this embodiment, the perovskite light-emitting layer has one or a mixture of perovskite quantum dots and perovskite thin films.
In this embodiment, the perovskite quantum dots, perovskiteThe mineral film comprises ABX3、A4BX6Or AB2X5The structural system of (1), wherein A is an inorganic metal ion, an amine organic group or a mixture of the inorganic metal ion and the amine organic group; b is lead, antimony, manganese, tellurium or tin; the halogen X is one or more of F, Br, I and Cl.
In this embodiment, the perovskite light emitting layer is prepared by a vacuum evaporation method or a solution method including a spin coating method, a dip coating method, a blade coating method, a casting method, a screen printing method, a spray coating method, and an inkjet printing method.
In this embodiment, the anode layer is an ITO conductive film prepared by magnetron sputtering; the cathode is made of a metal material prepared by a vacuum evaporation method. The metal material comprises one or alloy of Au, Ag, Cu and Al and a laminated structure.
In this embodiment, the substrate base plate may be a rigid substrate base plate, such as a glass base plate; it may also be a flexible substrate such as PET, PVA, etc.
In this embodiment, the hole transport layer has a single-layer structure or a double-layer structure, the single-layer structure is formed by PEDOT prepared by a solution method, and the double-layer structure is formed by stacking one of PVK, Poly-TPD, TFB, PTAA, and the like prepared by a solution method on the single-layer structure; the electron transport layer is TPBi prepared by a vacuum evaporation method, and the like.
In this embodiment, the frequency range of the ac power source is 1Hz to 20 MHz; the waveform of the alternating current power supply is one of sine wave, triangular wave, square wave and pulse.
In this embodiment, a method for manufacturing a perovskite LED for ac driving includes the steps of:
step S1, providing an anode substrate, wherein the anode material adopts an ITO conductive film prepared by magnetron sputtering, and the substrate needs to be cleaned before a hole transport layer is deposited on the anode substrate, and the specific process comprises the following steps:
step S11, putting the substrate into a glass cleaning agent, deionized water, acetone and ethanol respectively in sequence for ultrasonic treatment, wherein the ultrasonic time of each step is 15min;
and step S12, placing the cleaned product into an oven for drying.
Step S2, depositing a hole transport layer on the cleaned anode substrate by a solution method; the hole transport layer 1 adopts a double-layer structure, is respectively one of PEDOT prepared by a solution method and PVK, TFB and PTAA prepared by the solution method, and has the whole thickness of 40-60 nm.
And S3, depositing a layer of perovskite quantum dot solution synthesized by a high-temperature injection method on the hole transport layer through a solution method or a vacuum evaporation method to obtain a perovskite luminescent layer, wherein the perovskite quantum dot has the specific structural formula of CsPbBr3 and the concentration of 20mg/ml, and the perovskite LED device manufactured in the embodiment can emit bright green light under the driving of alternating voltage.
The preparation method of the perovskite quantum dot solution comprises the following steps:
step 1. Synthesis of a precursor solution, Cs2 CO3 (0.814 g), octadecene (ODE, 40 mL) and oleic acid (2.5 mL, OA) were charged together into a 100mL four-necked flask and dried at 120 ℃ for 1 hour;
step 2, heating to 150 ℃ under N2 until all Cs2 CO3 reacts with OA;
step 3, charging ODE (5 mL), PbBr2 (0.188 mmol), oleylamine (0.5 mL, OLA) and OA (0.5 mL) into a 100mL four-necked flask and vacuum-drying at 120 ℃ for 1 hour, after completely dissolving PbX2 salt, raising the temperature to 160 ℃ and rapidly injecting 0.4mL of precursor solution, after reacting for 5s, cooling the mixture with an ice-water bath;
and 4, adding the crude solution into ethyl acetate with the volume ratio of 1:3, and centrifuging. And (3) pouring out the supernatant, dispersing the precipitate into n-hexane, adding ethyl acetate with the volume ratio of 1:3, centrifuging, and dissolving the precipitate into n-octane to form a stable colloidal solution.
Step S4, depositing an electron transport layer on the perovskite luminescent layer, wherein the electron transport layer is TPBi prepared by vacuum evaporation method, the thickness is 40nm, and the vacuum vapor pressure is 1.8 multiplied by 10-6torr。
Step S5, depositing a cathode layer on the electron transport layer, wherein the cathode layer is Al/LiF prepared by a vacuum evaporation method to obtain the perovskite LE for alternating current drivingD wherein the thickness of Al is 150nm, the thickness of LiF is 1nm, and the vacuum vapor pressure is 1.8 × 10-6torr。
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.

Claims (10)

1. The perovskite LED for alternating current driving is characterized by comprising an anode layer, a hole transport layer, a perovskite luminous layer, an electron transport layer and a cathode layer which are sequentially laminated on a substrate from bottom to top; and an alternating current power supply is added at two ends of the cathode layer and the anode layer to realize the alternating current driven perovskite LED.
2. The perovskite LED for ac driving according to claim 1, wherein: the perovskite luminescent layer adopts one or a mixed structure of perovskite quantum dots and perovskite thin films.
3. An ac driven perovskite LED according to claim 2, wherein: the perovskite quantum dot and the perovskite thin film comprise ABX3、A4BX6Or AB2X5The structural system of (1), wherein A is an inorganic metal ion, an amine organic group or a mixture of the inorganic metal ion and the amine organic group; b is lead, antimony, manganese, tellurium or tin; the halogen X is one or more of F, Br, I and Cl.
4. The perovskite LED for ac driving according to claim 1, wherein: the perovskite luminescent layer is prepared by a vacuum evaporation method or a solution method.
5. The perovskite LED for ac driving according to claim 4, wherein: the solution method includes spin coating, dip coating, blade coating, casting, screen printing, spray coating, and inkjet printing.
6. The perovskite LED for ac driving according to claim 1, wherein: the anode layer is an ITO conductive film prepared by magnetron sputtering; the cathode is made of a metal material prepared by a vacuum evaporation method.
7. The perovskite LED for ac driving according to claim 6, wherein: the metal material comprises one or alloy of Au, Ag, Cu and Al and a laminated structure.
8. An alternating current driven perovskite LED according to any one of claims 1 to 7, wherein: the substrate base plate is a rigid substrate base plate or a flexible substrate base plate.
9. An alternating current driven perovskite LED according to any one of claims 1 to 7, wherein: the frequency range of the alternating current power supply is 1Hz-20 MHz; the waveform of the alternating current power supply is one of sine wave, triangular wave, square wave and pulse.
10. A method for preparing a perovskite LED for alternating current driving is characterized by comprising the following steps:
step S1, obtaining an anode substrate through the ITO conductive film prepared by magnetron sputtering, and cleaning;
step S2, depositing a hole transport layer on the cleaned anode substrate by a solution method;
step S3, depositing a layer of perovskite quantum dot solution synthesized by a high-temperature injection method on the hole transport layer by a solution method or a vacuum evaporation method to obtain a perovskite luminescent layer;
step S4, depositing an electron transport layer on the perovskite luminescent layer, wherein the electron transport layer is TPBi prepared by a vacuum evaporation method;
and S5, depositing a cathode layer on the electron transmission layer, wherein the cathode layer is Al/LiF prepared by a vacuum evaporation method, and the perovskite LED for alternating current driving is obtained.
CN201911201116.0A 2019-11-29 2019-11-29 Perovskite LED for alternating current driving and preparation method thereof Pending CN110767816A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113831913A (en) * 2020-11-12 2021-12-24 吉林大学 Electroluminescent perovskite long afterglow material, LED prepared from same and LED preparation method
CN113921731A (en) * 2021-09-30 2022-01-11 吉林大学 Electroluminescent LED based on Co-doped ZnO as electron transport layer and preparation method thereof

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Publication number Priority date Publication date Assignee Title
CN107611229A (en) * 2017-08-24 2018-01-19 南京大学 A kind of method for exchanging driving and improving silicon based hetero-junction electroluminescent device stability of photoluminescence
CN107611230A (en) * 2017-08-24 2018-01-19 南京大学 A kind of perovskite/silicon heterogenous electroluminescent device and preparation method
CN108630820A (en) * 2017-03-21 2018-10-09 北京大学深圳研究生院 A kind of exchange plane organic electroluminescence device

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CN108630820A (en) * 2017-03-21 2018-10-09 北京大学深圳研究生院 A kind of exchange plane organic electroluminescence device
CN107611229A (en) * 2017-08-24 2018-01-19 南京大学 A kind of method for exchanging driving and improving silicon based hetero-junction electroluminescent device stability of photoluminescence
CN107611230A (en) * 2017-08-24 2018-01-19 南京大学 A kind of perovskite/silicon heterogenous electroluminescent device and preparation method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113831913A (en) * 2020-11-12 2021-12-24 吉林大学 Electroluminescent perovskite long afterglow material, LED prepared from same and LED preparation method
CN113921731A (en) * 2021-09-30 2022-01-11 吉林大学 Electroluminescent LED based on Co-doped ZnO as electron transport layer and preparation method thereof

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