CN110767704B - Array substrate, display screen, composite display screen and display device - Google Patents

Array substrate, display screen, composite display screen and display device Download PDF

Info

Publication number
CN110767704B
CN110767704B CN201811653216.2A CN201811653216A CN110767704B CN 110767704 B CN110767704 B CN 110767704B CN 201811653216 A CN201811653216 A CN 201811653216A CN 110767704 B CN110767704 B CN 110767704B
Authority
CN
China
Prior art keywords
area
display screen
array substrate
image sensor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811653216.2A
Other languages
Chinese (zh)
Other versions
CN110767704A (en
Inventor
吕迅
崔志远
梁超
陶国胜
李梦萍
吴文刚
贾智信
迟帅杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yungu Guan Technology Co Ltd
Original Assignee
Yungu Guan Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yungu Guan Technology Co Ltd filed Critical Yungu Guan Technology Co Ltd
Priority to CN201811653216.2A priority Critical patent/CN110767704B/en
Publication of CN110767704A publication Critical patent/CN110767704A/en
Application granted granted Critical
Publication of CN110767704B publication Critical patent/CN110767704B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses an array substrate, a display screen, a composite display screen and a display device, wherein the array substrate comprises: the image sensor comprises a photosensitive area, a light-emitting diode and a light-emitting diode, wherein the image sensor is arranged below the photosensitive area; and the metal area of the photosensitive area is at least partially overlapped with the projection of the sensor circuit in the corresponding image sensor in the vertical direction. Utilize the metal grid circuit on the image sensor, refer to the sensor circuit on the image sensor with the light-tight sensor circuit in the array substrate, coincide as far as possible with the metal grid circuit on the image sensor during the design to metal grid circuit on the make full use of image sensor reduces sheltering from of light-tight metal wire to light, increases the luminousness, promotes the effect of shooing, when not influencing shooting effect or sensitization effect as far as possible, can improve the screen and account for the ratio, realize the design of full face screen.

Description

Array substrate, display screen, composite display screen and display device
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a display screen, a composite display screen and a display device.
Background
With the rapid development of science and technology, the full-screen technology has been generally adopted by mobile terminal merchants. The full screen is literally explained that the front of the mobile terminal is all screens, and the screen occupation ratio close to 100% is pursued. However, in practical products, taking a mobile phone as an example, the front camera, the light sensor and other functional modules need to collect light from the front side of the mobile phone, and therefore are usually disposed on the top side of the screen, and the edge of the screen bypasses these functional modules to present a shape similar to that of a "ziliu". Therefore, the screen occupation ratio of the mobile phone in the prior art is restricted by the functional modules such as the front camera, the light sensor and the like, so that the further improvement cannot be achieved, and the visual effect of the screen is not perfect.
Disclosure of Invention
Therefore, the invention provides an array substrate, a display screen, a composite display screen and a display device, so as to improve the screen occupation ratio.
According to a first aspect, an embodiment of the present invention provides an array substrate, where the array substrate is a transparent display substrate, and includes: the functional structure layer comprises a light-tight wiring layer; in the direction vertical to the surface of the transparent substrate, the array substrate comprises a photosensitive area, and an image sensor can be placed below the photosensitive area; and the projection of the opaque routing in the opaque routing layer of the photosensitive area on the surface of the transparent substrate is at least partially overlapped with the projection of the sensor circuit inside the image sensor on the surface of the transparent substrate.
Optionally, the area of an overlapping area of the projection of the light-tight trace of the photosensitive region on the surface of the transparent substrate and the projection of the sensor circuit inside the image sensor on the surface of the transparent substrate is greater than or equal to 50% of the area of the light-tight trace of the photosensitive region.
Optionally, a plurality of microlenses are disposed within the photosensitive region.
Optionally, the refractive index of the micro-lenses is greater than the refractive index of the transparent substrate and the functional structure layer; preferably, the refractive index of the micro lens is 1.65-2.0, and the refractive indices of the transparent substrate and the functional structure layer are 1.5-1.6.
Optionally, the diameter of the microlenses is 0.5-100 microns and the height of the microlenses is 5-6 microns.
Optionally, the array substrate further includes: and the micro lens is positioned on the surface of one side, deviating from the transparent substrate, of the functional structure layer, or the micro lens is positioned on the surface of one side, deviating from the functional structure layer, of the encapsulation layer.
Optionally, the image sensor has a plurality of image-sensing areas therein, and a projection of the microlenses onto the transparent substrate at least partially overlaps a projection of the image-sensing areas onto the transparent substrate; or the projection of the micro lens on the transparent substrate at least partially overlaps with the pixels of the photosensitive area.
According to a second aspect, an embodiment of the present invention provides a display screen, including: an array substrate as claimed in any one of the preceding first aspects.
According to a third aspect, an embodiment of the present invention provides a composite display screen, which is characterized by comprising at least a first display area and a second display area; the first display area and the second display area can be used for displaying static or dynamic pictures; the display screen of the second aspect is arranged in the first display area, the display screen arranged in the second display area is a PMOLED display screen or an AMOLED display screen or a semi-AMOLED display screen, and a pixel circuit of the semi-AMOLED display screen only comprises one transistor.
According to a fourth aspect, an embodiment of the present invention provides a display device including: a display screen according to the second aspect or a composite display screen according to the third aspect.
The embodiment of the invention has the following beneficial effects:
1. the array substrate includes: the image sensor comprises a photosensitive area, a light-emitting diode and a light-emitting diode, wherein the image sensor is arranged below the photosensitive area; and the metal area of the photosensitive area is at least partially overlapped with the projection of the sensor circuit in the corresponding image sensor in the vertical direction. Utilize the metal grid circuit on the image sensor, refer to the sensor circuit on the image sensor with the light-tight sensor circuit in the array substrate, coincide as far as possible with the metal grid circuit on the image sensor during the design to metal grid circuit on the make full use of image sensor reduces sheltering from of light-tight metal wire to light, increases the luminousness, promotes the effect of shooing, when not influencing shooting effect or sensitization effect as far as possible, can improve the screen and account for the ratio, realize the design of full face screen.
2. Be provided with a plurality of microlenses in the photosensitive zone, the external environment light that kicks into image sensor district gathers to avoid the sensor circuit on array substrate and the image sensor to the sheltering from of light, thereby increase effective pixel region light inlet quantity among the image sensor, and, because photosensitive zone's metal area with correspond the inside sensor circuit of image sensor overlaps at least part in the projection of vertical direction, can make the nearly whole image sensor image sensing district that kicks into of light of former metal area overlap portion in, increase the luminousness, promote the effect of shooing, when influence shooting effect or sensitization effect as far as possible, can improve the screen and account for the ratio, realize the design of full face screen.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of an array substrate according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a photosensitive area in an array substrate according to an embodiment of the present invention;
FIG. 3 is a top view of a photosensitive area in an array substrate according to an embodiment of the invention;
fig. 4 is a cross-sectional view illustrating a photosensitive area in another array substrate according to an embodiment of the present invention;
FIG. 5 shows a schematic view of a display device of an embodiment of the invention;
fig. 6 shows a schematic diagram of another display device according to an embodiment of the present invention.
Wherein the reference numerals are:
1-an array substrate; 10-a photosensitive region; 101-a glass cover plate; 102-an encapsulation layer; 103-opaque routing layer; 104-a transparent substrate; 105-opaque routing; 106-a light emitting device; 107-functional structural layer; 108-microlenses, 109-light emitting layers; 20-an image sensor; 201-sensor lines; 202-a sensing area; 810-an equipment body; 812-a notching region; 814-non-slotted zone; 820-a display screen; 930-image sensor.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
At present, aiming at the problem that the screen occupation ratio of the existing display screen is restricted by the photosensitive functional modules such as a front camera, a light sensor and the like and can not be further improved, the inventor sets the area for placing the photosensitive functional modules to be highly transparent, the other areas are normal display areas, when the full-screen display is needed, the normal display area and the high transparent area are both displayed normally, when lighting is needed, for example when the front camera is needed to be opened, the high-transparency area is not displayed, lighting can be carried out, and in order to realize high transparency and improve shooting effect, the inventor adopts various schemes of improving transparency, such as a glass cover plate with high transparency, a glass cover plate with a high-transparency area, and the like, however, no matter what scheme the inventor adopts for improving transparency, when the shooting effect of the front camera is verified, the external shooting effect of the camera is difficult to achieve. The inventor researches and discovers that although the transparent OLED screen is transparent, a plurality of opaque wires, such as metal lines, metal gates and metal electrodes of capacitors, exist in the array substrate, and the metals may include molybdenum, titanium and aluminum wires, which have a certain light-shielding property, thereby reducing the amount of light entering the camera, reducing the light transmitted to the camera, and affecting the shooting effect. Meanwhile, the inventor finds that the image sensors all comprise light-sensitive areas and sensor lines, wherein the sensor lines are arranged in a grid shape and are made of opaque metal, the light-sensitive areas are arranged between the grid shapes, and the sensor lines of the image sensors of the same model are basically the same.
Based on this, the inventor proposes an array substrate, as shown in fig. 1 and 2, which may be a transparent array substrate, including: a transparent substrate 104, and a functional structure layer 107 disposed on the transparent substrate, wherein the functional structure layer 107 includes a light-tight wiring layer 103; wherein, in the direction perpendicular to the surface of the transparent substrate 104, the array substrate includes: a photosensitive area 10, under which the image sensor 20 may be placed, and a photosensitive area 10; the projection of the opaque traces 105 in the opaque trace layer 103 of the photosensitive area 10 on the transparent substrate 104 at least partially overlaps the projection of the sensor traces 201 inside the image sensor 20 on the surface of the transparent substrate 104. In this embodiment, fig. 2 shows a cross-sectional view of the photosensitive area 10, fig. 3 shows a top view of the photosensitive area 10, in fig. 3, for clarity, to show that a projection of the opaque traces 105 of the photosensitive area 10 on the transparent substrate 104 at least partially overlaps a projection of the sensor lines 201 inside the image sensor 20 on the transparent substrate 104, which is illustrated by using an omitted schematic diagram, fig. 3 illustrates a partially opaque trace 105, and uses a portion of the sensor trace 201 as an example, the sensing area 202 shown in fig. 3 may represent a set of pixels in one or more image sensors, and the number of specific sub-pixels is not limited in this embodiment. Specifically, refer to sensor circuit 201 on image sensor 20, during the design with the light-tight sensor circuit 201 of walking on line 105 and the image sensor 20 of array substrate 1 coincide as far as possible to the light-tight line 105 of walking shelters from to light of minimizing reduces, increases the luminousness, promotes the effect of shooing, when not influencing shooting effect or sensitization effect as far as possible, can improve the screen and account for the ratio, realize the design of full face screen.
In order to ensure as much light transmission as possible, in the present embodiment, the area of the projection overlapping area of the opaque traces 105 of the photosensitive area 10 and the corresponding sensor lines 201 inside the image sensor 20 is greater than or equal to 50% of the area of the opaque traces 105 of the photosensitive area 10. In a specific embodiment, taking a certain type of image sensor 20 as an example, the total area of the overlapped areas can reach 70% to 80% of the area of the opaque traces 105. Specifically, the metal portions of the gate and the capacitor plate may be overlapped with the sensor line 201, the width of the additional conductive line may be designed with reference to the sensor line 201 inside the image sensor 20, and meanwhile, the thickness of the conductive line may be increased to reduce the impedance of the line and ensure the display performance of the array substrate 1.
In order to further increase the light transmission performance of the screen, the external ambient light entering the image sensor area may be condensed to avoid the light shielding by the array substrate 1 and the sensor lines 201 on the image sensor 20, so as to increase the light entering amount of the effective pixel area in the image sensor 20, and in an alternative embodiment, as shown in fig. 4, a plurality of microlenses 108 are disposed in the area of the image sensor 20. Specifically, in the present embodiment, the microlenses 108 may be disposed on the functional structure layer 107 under the glass cover 101 of the array substrate 1 or in the functional structure layer 107, and in the present embodiment, the functional structure layer 107 may include a light emitting layer 109 and an opaque routing layer 103, which are sequentially stacked on the light emitting device 106 under the encapsulation layer 102. In particular, in order to inject more light, the micro-lens 108 may be disposed above the opaque routing layer 103, for example, on the upper surface of the encapsulation layer 102, i.e. the surface of the encapsulation layer 102 facing the glass cover plate 101, or on the lower surface of the encapsulation layer 102, i.e. the surface of the functional structure layer 107 facing away from the transparent substrate 104. In this embodiment, the location of the micro-lenses 108 is not specifically limited, but the micro-lenses 108 need to be disposed above the opaque trace layer 103 where the opaque traces 105 are located, and the micro-lenses are illustrated as being disposed on the surface of the encapsulation layer facing the cover glass 101 in fig. 4. The above-described arrangement positions are merely illustrative and do not represent all embodiments.
In the embodiment, the refractive index of the micro lens 108 is greater than the refractive index of the functional structure layer 107 and the transparent substrate 104, so that the external ambient light can be refracted to the area where the center line of the micro lens 108 is located after passing through the micro lens 108, the functional structure layer 107 and the transparent substrate 104 to avoid the light-tight trace 105 and the sensor circuit 201 of the image sensor 20, so that more light reaches the sensing area 202 of the image sensor 20 under the array substrate 1. Specifically, the refractive index of the micro lens 108 may be 1.65 to 2.0, and the refractive indices of the functional structure layer 107 and the transparent substrate 104 may be 1.5 to 1.6. In the present embodiment, the refractive indexes of the micro-lens 108, the functional structure layer 107 and the transparent substrate 104 are only given as examples, and the sensing region 202 of the image sensor 20 can be more than necessary as long as the light passing through the micro-lens 108 can be satisfied.
When the ambient light is incident from the surface of the array substrate 1 to the inside, in order to make the ambient light pass through each microlens 108 and be focused on the sensing area 202 of the image sensor 20 as much as possible, as an alternative embodiment, the diameter of each microlens 108 is 0.5-100 microns, the height of each microlens 108 is 5-6 microns, and, within the image sensor 20, having a plurality of image-sensing regions 202, the projections of the microlenses 108 and the image-sensing regions 202 onto the transparent substrate 104 at least partially overlap, or the projection of the micro lens on the transparent substrate at least partially overlaps with the photosensitive area pixel, in this embodiment, the sensing region may comprise one or more pixels of the image sensor, which, in this embodiment, the diameter of the microlens 108 may be determined based on the number of pixels contained within a defined sensing region or the size of the sensing region 202, so that the projection of the sensor area 202 and the microlenses 108 onto the transparent substrate overlaps as much as possible. The height of the microlens 108 may depend on the size of the image-sensing region 202 and the distance between the image sensor 20 and the microlens 108. As shown in fig. 4, the ambient light is focused into the image sensing area 202 of the image sensor 20 through the micro lens 108, and since the projection of the opaque trace 105 of the photosensitive area 10 on the transparent substrate is at least partially overlapped with the projection of the sensor line 201 inside the corresponding image sensor 20 on the transparent substrate 104, almost all the light of the overlapped portion of the opaque trace 105 and the sensor line 201 can be incident into the image sensing area 202 of the image sensor 20, so as to increase the light transmittance and improve the photographing effect.
The embodiment of the invention also provides a display screen, and the array substrate in the embodiment is provided. Specifically, this display screen is transparent display screen, and photosensitive device, for example image sensor, can be placed to the below, and the display screen that adopts above-mentioned array substrate to make has high transmittance, but the external environment incident light that photosensitive device structure is more under its screen, has higher photosensitive effect.
The embodiment of the invention also provides a composite display screen, which at least comprises a first display area and a second display area; the first display area and the second display area can be used for displaying static or dynamic pictures; the display screen described in the above embodiment is arranged in the first display area, the display screen arranged in the second display area is a PMOLED display screen, an AMOLED display screen, or a semi-AMOLED display screen, and a pixel circuit of the semi-AMOLED display screen includes only one transistor.
In this embodiment, the pixel circuit of the half AMOLED display screen is different from the pixel circuit of the conventional AMOLED, the pixel circuit only includes a switch transistor and does not include elements such as a storage capacitor, specifically, the pixel circuit only includes a switch transistor, the switch transistor includes a first end, a second end and a control end, the scan line is connected with the control end of the switch transistor, the data line is connected with the first end of the switch transistor, and the first electrode is connected with the second end of the switch transistor. The first electrode is an anode of the light-emitting device, the scanning line and the data line are both connected with the pixel circuit, the scanning line provides voltage for the pixel circuit to control the pixel circuit to be turned on and turned off, and when the pixel circuit is turned on, the driving current from the data line is directly provided for the first electrode to control the sub-pixel to emit light. The pixel circuit comprises a switch transistor, the switch transistor is arranged in one-to-one correspondence with the first electrode, the data line is connected with the first end of the switch transistor, the scanning line is connected with the control end of the switch transistor, and a plurality of sub-pixels, namely light emitting devices, are in one-to-one correspondence with a plurality of switch devices, namely one sub-pixel corresponds to one switch device. The data line is connected with the first end of the switch device, the scanning line is connected with the control end of the switch transistor, the number of the switch transistors in the pixel circuit is reduced to one, in the working process, only the input switch voltage is needed in the scanning line, and the load current of the OLED is not needed to be input, so that the load current of the scanning line is greatly reduced, and the scanning line can be made of transparent materials such as ITO. And the data line only needs to supply the current of one OLED pixel at each moment, and the load is also very little, therefore, the data line also can adopt transparent materials such as ITO to the luminousness of display screen has been improved.
In an alternative embodiment, when the pixel circuit includes a switching transistor, the switching transistor is a driving TFT, the first terminal is a source of the driving TFT, the second terminal is a drain of the driving TFT, and the control terminal is a gate of the driving TFT; the driving TFT is of a top gate structure or a bottom gate structure. In the actual process, the source and drain of the TFT have the same structure and may be interchanged, in this embodiment, for convenience of description, the source of the switching transistor is used as the first terminal, and the drain of the switching transistor is used as the second terminal; of course, in other embodiments, the drain of the switching transistor may be used as the first terminal and the source of the switching transistor may be used as the second terminal. In another alternative embodiment, the switch Transistor may also be a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), or other elements with switching characteristics in the prior art, such as an Insulated Gate Bipolar Transistor (IGBT), and so on, as long as the electronic element capable of implementing the switching function in the present embodiment and being integrated into the display screen falls within the protection scope of the present invention.
An embodiment of the present invention further provides a display device, including: the display screen or composite display screen described in the above embodiments. In this embodiment, the display device may be a product or a component having a display function, such as a mobile phone, a tablet, a television, a monitor, a palm computer, an ipod, a digital camera, and a navigator.
Fig. 5 is a schematic structural diagram of a display device in an embodiment, where the display device includes a display device 810 and a display screen 820. The display screen 820 is disposed on the display device 810 and is interconnected with the display device 810. The display 820 may be the display in any of the above embodiments, and is used to display static or dynamic pictures.
Fig. 6 is a schematic structural diagram of a display device body 810 in an embodiment. In this embodiment, the display device 810 may have a slotted region 812 and a non-slotted region 814. Photosensitive devices such as image sensor 930 and light sensors, etc. may be disposed in the grooved region 812. At this time, the display panels of the first display area of the display 820 are attached together corresponding to the slotted area 812, so that the above-mentioned light sensing devices such as the image sensor 930 and the light sensor can collect external light through the first display area. Because the display screen in the first display area can effectively improve the diffraction phenomenon generated by the transmission of the external light through the first display area, the quality of the image shot by the image sensor 930 on the display device can be effectively improved, the distortion of the shot image caused by diffraction can be avoided, and meanwhile, the accuracy and the sensitivity of the optical sensor for sensing the external light can also be improved.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.

Claims (9)

1. An array substrate, wherein the array substrate is a transparent display substrate, comprising:
the functional structure layer comprises a light-tight wiring layer;
in the direction vertical to the surface of the transparent substrate, the array substrate comprises a photosensitive area, and an image sensor can be placed below the photosensitive area; a plurality of micro lenses are arranged in the photosensitive area; the micro lenses are arranged above the light-tight routing layer;
the projection of the opaque routing in the opaque routing layer of the photosensitive area on the surface of the transparent substrate is at least partially overlapped with the projection of the sensor circuit inside the image sensor on the surface of the transparent substrate; a plurality of image-sensing areas within the image sensor, a projection of the microlenses on the transparent substrate and a projection of the image-sensing areas on the transparent substrate at least partially overlapping; the micro lens is suitable for condensing external environment light emitted into the photosensitive area and then emitting the condensed external environment light into the image sensing area.
2. The array substrate of claim 1, wherein an area of an overlapping area of a projection of the opaque traces of the photosensitive region on the surface of the transparent substrate and a projection of the sensor lines inside the image sensor on the surface of the transparent substrate is greater than or equal to 50% of an area of the opaque traces of the photosensitive region.
3. The array substrate of claim 1, wherein the refractive index of the micro-lenses is greater than the refractive index of the transparent substrate and the functional structure layer.
4. The array substrate of claim 3, wherein the refractive index of the micro-lenses is 1.65-2.0, and the refractive indices of the transparent substrate and the functional structure layer are 1.5-1.6.
5. The array substrate of claim 1, wherein the diameter of the micro-lenses is 0.5-100 microns and the height of the micro-lenses is 5-6 microns.
6. The array substrate of any of claims 1 or 3-5, wherein the array substrate further comprises: an encapsulation layer located over the functional structure layer,
the micro lens is positioned on the surface of one side, deviating from the transparent substrate, of the functional structure layer, or the micro lens is positioned on the surface of one side, deviating from the functional structure layer, of the packaging layer.
7. A display screen, comprising: the array substrate according to any one of claims 1 to 6.
8. A composite display screen is characterized by at least comprising a first display area and a second display area; the first display area and the second display area can be used for displaying static or dynamic pictures;
the display screen of claim 7 is arranged in the first display area, the display screen arranged in the second display area is a PMOLED display screen or an AMOLED display screen or a semi-AMOLED display screen, and a pixel circuit of the semi-AMOLED display screen only includes one transistor.
9. A display device, comprising:
a display screen according to claim 7 or a composite display screen according to claim 8.
CN201811653216.2A 2018-12-29 2018-12-29 Array substrate, display screen, composite display screen and display device Active CN110767704B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811653216.2A CN110767704B (en) 2018-12-29 2018-12-29 Array substrate, display screen, composite display screen and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811653216.2A CN110767704B (en) 2018-12-29 2018-12-29 Array substrate, display screen, composite display screen and display device

Publications (2)

Publication Number Publication Date
CN110767704A CN110767704A (en) 2020-02-07
CN110767704B true CN110767704B (en) 2022-04-19

Family

ID=69328493

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811653216.2A Active CN110767704B (en) 2018-12-29 2018-12-29 Array substrate, display screen, composite display screen and display device

Country Status (1)

Country Link
CN (1) CN110767704B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111736241A (en) * 2020-06-28 2020-10-02 Oppo广东移动通信有限公司 Display panel, image display device and method, terminal, and storage medium
CN112909204B (en) * 2021-02-02 2022-09-09 武汉华星光电半导体显示技术有限公司 Display panel, manufacturing method thereof and display device
CN113036058A (en) * 2021-03-08 2021-06-25 合肥维信诺科技有限公司 Display substrate and display device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107093617B (en) * 2017-05-02 2019-09-10 京东方科技集团股份有限公司 Array substrate, image-pickup method and display device
CN107238990A (en) * 2017-08-01 2017-10-10 惠科股份有限公司 A kind of array base palte and a kind of display device
CN107515435B (en) * 2017-09-11 2020-12-29 京东方科技集团股份有限公司 Display panel and display device
CN108428725B (en) * 2018-03-30 2021-07-09 上海天马有机发光显示技术有限公司 Array substrate, manufacturing method of array substrate, display panel and display device
CN108769304B (en) * 2018-05-16 2024-02-06 Oppo广东移动通信有限公司 Electronic device

Also Published As

Publication number Publication date
CN110767704A (en) 2020-02-07

Similar Documents

Publication Publication Date Title
US11275476B2 (en) Touch sensing unit and display device including the same
US11489007B2 (en) Display panel and display device
CN110767710B (en) Display substrate, display panel and display device
CN109064904B (en) Display panel and display device
CN112186021B (en) Display panel and display device
CN111048005B (en) Display panel and display device
CN111833720B (en) Display panel and display device
CN110767704B (en) Array substrate, display screen, composite display screen and display device
WO2016145771A1 (en) Array substrate and manufacturing method thereof, and display device
US20220158140A1 (en) Display panel and display apparatus
CN210575037U (en) Display panel and display device
CN210627870U (en) Display panel and display device
US20230045968A1 (en) Display substrate and display apparatus
CN110783394A (en) Light-transmitting display panel, display panel and display device
RU2730372C1 (en) Pixel component of display, display screen component, display screen and terminal
CN112542484A (en) Display panel, display screen and electronic equipment
JP7111793B2 (en) Pixel array substrate and display device having the same
US20230337494A1 (en) Display panel and display apparatus
CN211238258U (en) Display back plate and display panel
CN113327941A (en) Array substrate, display panel and preparation method of array substrate
WO2023109137A1 (en) Display panel and display device
CN210926018U (en) Display panel, display screen and electronic equipment
WO2022050132A1 (en) Image display device and electronic apparatus
US20240029648A1 (en) Display panel and display apparatus
CN111834398B (en) Display module and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant