CN110767631A - Image sensor and image sensor manufacturing method - Google Patents
Image sensor and image sensor manufacturing method Download PDFInfo
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- CN110767631A CN110767631A CN201911079596.8A CN201911079596A CN110767631A CN 110767631 A CN110767631 A CN 110767631A CN 201911079596 A CN201911079596 A CN 201911079596A CN 110767631 A CN110767631 A CN 110767631A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000002955 isolation Methods 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides an image sensor and a manufacturing method thereof, and relates to the technical field of image sensors. The image sensor comprises a semiconductor substrate, wherein a first photosensitive element, a second photosensitive element and a third photosensitive element are arranged inside the semiconductor substrate, an isolation groove is formed in the surface of the semiconductor substrate, two electrostatic shielding layers are arranged inside the isolation groove, two electromagnetic shielding layers are arranged in the middle of each electrostatic shielding layer, an insulating medium layer is arranged in the middle of each electromagnetic shielding layer, and an electrode layer is arranged on the upper surface of the semiconductor substrate. Through setting up the isolation groove between photosensitive element, then form electrostatic shield layer, electromagnetic shield layer and dielectric layer in the isolation groove to effectual mutual interference between the adjacent photosensitive element of having prevented has improved the SNR of sensor, makes the sensor have high sensitivity again simultaneously, further promotion the each side performance of sensor.
Description
Technical Field
The invention relates to the technical field of image sensors, in particular to an image sensor and a manufacturing method of the image sensor.
Background
The image sensor is a functional device which converts the light image on the light receiving surface into a plurality of small units and converts the light image into an available electric signal by utilizing the photoelectric conversion function of a photoelectric device compared with the photosensitive elements of a point light source such as a photosensitive diode and a photosensitive triode.
With the progress of science and technology, the performance of image sensors is more and more powerful, and the image sensors can sense and identify fine objects and improve the image quality.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides an image sensor and a manufacturing method thereof, and solves the problems that the prior image sensor is still interfered by current, voltage and magnetic field, and the improvement effect of the image sensor is limited due to the fact that the prevention effect of the interference is not ideal.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: the utility model provides an image sensor, includes the semiconductor substrate, the inside of semiconductor substrate is provided with first photosensitive element, second photosensitive element and third photosensitive element, the isolation groove has been seted up on the surface of semiconductor substrate, the inside of isolation groove is provided with two electrostatic shielding layers, two the centre of electrostatic shielding layer is provided with two electromagnetic shield layers, two the centre of electromagnetic shield layer is provided with insulating medium layer, the upper surface of semiconductor substrate is provided with the electrode layer, the upper surface of semiconductor substrate and the top that is located the electrode layer are provided with the mask layer, the upper surface of mask layer is provided with metal medium layer, metal medium layer's upper surface is provided with the color filter layer, the upper surface of color filter layer is provided with first microlens, second microlens and third microlens.
Preferably, the number of the isolation grooves is two, and the two isolation grooves are respectively located between the first photosensitive element and the second photosensitive element, and between the second photosensitive element and the third photosensitive element.
Preferably, the number of the electrode layers is three, and the three electrode layers are respectively located right above the first photosensitive element, the second photosensitive element and the third photosensitive element.
Preferably, wire grooves penetrate through the mask layer, the metal medium layer and the color filter layer, the number of the wire grooves is three, and the three wire grooves are respectively positioned below the first micro lens, the second micro lens and the third micro lens.
Preferably, the upper surface of the color filter layer is provided with three light blocking rings, and the first microlens, the second microlens and the third microlens are located inside the light blocking rings.
A method for manufacturing an image sensor comprises the following manufacturing steps:
s1, preparing a semiconductor substrate, and checking whether damage or defect exists on the surface of the semiconductor substrate;
s2, forming a first photosensitive element, a second photosensitive element and a third photosensitive element in the semiconductor substrate, and forming an isolation groove between the first photosensitive element and the second photosensitive element and between the second photosensitive element and the third photosensitive element;
s3, forming two electrostatic shielding layers in the isolation groove, forming two electromagnetic shielding layers between the two electrostatic shielding layers, and forming an insulating medium layer between the two electromagnetic shielding layers;
and S4, forming an electrode layer, a mask layer, a metal medium layer and a color filter layer on the upper surface of the semiconductor substrate, and forming wire grooves among the mask layer, the metal medium layer and the color filter layer.
And S5, forming a first micro lens, a second micro lens and a third micro lens on the upper surface of the color filter layer, and forming an iris diaphragm on the peripheries of the first micro lens, the second micro lens and the third micro lens.
(III) advantageous effects
The invention provides an image sensor and a manufacturing method thereof. The method has the following beneficial effects:
according to the image sensor and the manufacturing method of the image sensor, the isolation grooves are formed among the photosensitive elements, and then the electrostatic shielding layer, the electromagnetic shielding layer and the insulating medium layer are formed in the isolation grooves, so that mutual interference among the adjacent photosensitive elements is effectively prevented, the signal-to-noise ratio of the sensor is improved, the sensor has high sensitivity, the performances of the sensor in all aspects are further improved, and the mutual interference among the first micro lens, the second micro lens and the third micro lens can be avoided through the arranged stop rings.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of a semiconductor substrate according to the present invention.
Wherein, 1, a semiconductor substrate; 2. a first photosensitive element; 3. a second photosensitive element; 4. a third photosensitive element; 5. an isolation trench; 6. an electrostatic shielding layer; 7. an electromagnetic shielding layer; 8. an insulating dielectric layer; 9. an electrode layer; 10. a mask layer; 11. a metal dielectric layer; 12. a color filter layer; 13. a wire slot; 14. a first microlens; 15. a second microlens; 16. a third microlens; 17. an iris stop.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example (b):
as shown in fig. 1-2, an embodiment of the present invention provides an image sensor, which includes a semiconductor substrate 1, a first photosensitive element 2, a second photosensitive element 3, and a third photosensitive element 4 are disposed inside the semiconductor substrate 1, an isolation groove 5 is disposed on a surface of the semiconductor substrate 1, two electrostatic shielding layers 6 are disposed inside the isolation groove 5, two electromagnetic shielding layers 7 are disposed between the two electrostatic shielding layers 6, an insulating medium layer 8 is disposed between the two electromagnetic shielding layers 7, an electrode layer 9 is disposed on an upper surface of the semiconductor substrate 1, a mask layer 10 is disposed on the upper surface of the semiconductor substrate 1 and above the electrode layer 9, a metal medium layer 11 is disposed on an upper surface of the mask layer 10, a color filter layer 12 is disposed on an upper surface of the metal medium layer 11, a first microlens 14 is disposed on an upper surface of the color filter layer 12, a second microlens 15 and a third microlens 16.
The number of the isolation grooves 5 is two, the two isolation grooves 5 are respectively located between the first photosensitive element 2 and the second photosensitive element 3, and between the second photosensitive element 3 and the third photosensitive element 4, the number of the electrode layers 9 is three, the three electrode layers 9 are respectively located right above the first photosensitive element 2, the second photosensitive element 3 and the third photosensitive element 4, the mask layer 10, the metal medium layer 11 and the color filter layer 12 are provided with the wire grooves 13 in a penetrating manner, the number of the wire grooves 13 is three, the three wire grooves 13 are respectively located below the first micro lens 14, the second micro lens 15 and the third micro lens 16, the upper surface of the color filter layer 12 is provided with three light blocking rings 17, and the first micro lens 14, the second micro lens 15 and the third micro lens 16 are located inside the light blocking rings 17.
Through setting up isolation groove 5 between the photosensitive element, then form electrostatic shield layer 6, electromagnetic shield layer 7 and dielectric layer 8 in isolation groove 5 to effectual mutual interference between the adjacent photosensitive element of having prevented has improved the SNR of sensor, makes the sensor have high sensitivity again simultaneously, further each aspect performance of sensor has been promoted, through the circle 17 that is in the shade that sets up, also can avoid the mutual interference between first microlens 14, second microlens 15 and third microlens 16.
A method for manufacturing an image sensor comprises the following manufacturing steps:
s1, preparing a semiconductor substrate 1, and checking whether damage or defect exists on the surface of the semiconductor substrate 1;
s2, forming a first photosensitive element 2, a second photosensitive element 3 and a third photosensitive element 4 in the semiconductor substrate 1, and forming an isolation groove 5 between the first photosensitive element 2 and the second photosensitive element 3, and between the second photosensitive element 3 and the third photosensitive element 4;
s3, forming two electrostatic shielding layers 6 in the isolation groove 5, forming two electromagnetic shielding layers 7 between the two electrostatic shielding layers 6, and forming an insulating medium layer 8 between the two electromagnetic shielding layers 7;
s4, forming an electrode layer 9, a mask layer 10, a metal medium layer 11 and a color filter layer 12 on the upper surface of the semiconductor substrate 1, and forming wire grooves 13 among the mask layer 10, the metal medium layer 11 and the color filter layer 12.
And S5, forming a first micro lens 14, a second micro lens 15 and a third micro lens 16 on the upper surface of the color filter layer 12, and forming a stop 17 on the peripheries of the first micro lens 14, the second micro lens 15 and the third micro lens 16.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. An image sensor comprising a semiconductor substrate (1), characterized in that: a first photosensitive element (2), a second photosensitive element (3) and a third photosensitive element (4) are arranged in the semiconductor substrate (1), an isolation groove (5) is formed in the surface of the semiconductor substrate (1), two electrostatic shielding layers (6) are arranged in the isolation groove (5), two electromagnetic shielding layers (7) are arranged in the middle of the two electrostatic shielding layers (6), an insulating medium layer (8) is arranged in the middle of the two electromagnetic shielding layers (7), an electrode layer (9) is arranged on the upper surface of the semiconductor substrate (1), a mask layer (10) is arranged on the upper surface of the semiconductor substrate (1) and above the electrode layer (9), a metal medium layer (11) is arranged on the upper surface of the mask layer (10), and a color filter layer (12) is arranged on the upper surface of the metal medium layer (11), and a first micro lens (14), a second micro lens (15) and a third micro lens (16) are arranged on the upper surface of the color filter layer (12).
2. An image sensor as claimed in claim 1, wherein: the number of isolation groove (5) is two, and two isolation groove (5) are located the centre of first photosensitive element (2) and second photosensitive element (3), second photosensitive element (3) and third photosensitive element (4) respectively.
3. An image sensor as claimed in claim 1, wherein: the number of the electrode layers (9) is three, and the three electrode layers (9) are respectively positioned right above the first photosensitive element (2), the second photosensitive element (3) and the third photosensitive element (4).
4. An image sensor as claimed in claim 1, wherein: wire grooves (13) are formed among the mask layer (10), the metal dielectric layer (11) and the color filter layer (12) in a penetrating mode, the number of the wire grooves (13) is three, and the three wire grooves (13) are located below the first micro lens (14), the second micro lens (15) and the third micro lens (16) respectively.
5. An image sensor as claimed in claim 1, wherein: the upper surface of the color filter layer (12) is provided with three light blocking rings (17), and the first micro lens (14), the second micro lens (15) and the third micro lens (16) are all located inside the light blocking rings (17).
6. A method of fabricating an image sensor, comprising: the method comprises the following manufacturing steps:
s1, preparing a semiconductor substrate (1), and checking whether damage or defect exists on the surface of the semiconductor substrate (1);
s2, forming a first photosensitive element (2), a second photosensitive element (3) and a third photosensitive element (4) in the semiconductor substrate (1), and forming an isolation groove (5) between the first photosensitive element (2) and the second photosensitive element (3) and between the second photosensitive element (3) and the third photosensitive element (4);
s3, forming two electrostatic shielding layers (6) in the isolation groove (5), forming two electromagnetic shielding layers (7) in the middle of the two electrostatic shielding layers (6), and forming an insulating medium layer (8) in the middle of the two electromagnetic shielding layers (7);
s4, forming an electrode layer (9), a mask layer (10), a metal medium layer (11) and a color filter layer (12) on the upper surface of the semiconductor substrate (1), and forming wire grooves (13) among the mask layer (10), the metal medium layer (11) and the color filter layer (12).
S5, forming a first micro lens (14), a second micro lens (15) and a third micro lens (16) on the upper surface of the color filter layer (12), and forming an iris diaphragm (17) on the peripheries of the first micro lens (14), the second micro lens (15) and the third micro lens (16).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911079596.8A CN110767631A (en) | 2019-11-07 | 2019-11-07 | Image sensor and image sensor manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911079596.8A CN110767631A (en) | 2019-11-07 | 2019-11-07 | Image sensor and image sensor manufacturing method |
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| CN110767631A true CN110767631A (en) | 2020-02-07 |
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| CN201911079596.8A Pending CN110767631A (en) | 2019-11-07 | 2019-11-07 | Image sensor and image sensor manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115840206A (en) * | 2021-12-14 | 2023-03-24 | 深圳市速腾聚创科技有限公司 | Laser receiver and laser radar |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057779A (en) * | 2016-07-29 | 2016-10-26 | 王汉清 | Semiconductor device structure |
| CN109346494A (en) * | 2018-11-20 | 2019-02-15 | 德淮半导体有限公司 | Phase focus image sensor and forming method thereof |
| CN109786404A (en) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Image sensor devices, image sensor system and forming method thereof |
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2019
- 2019-11-07 CN CN201911079596.8A patent/CN110767631A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057779A (en) * | 2016-07-29 | 2016-10-26 | 王汉清 | Semiconductor device structure |
| CN109786404A (en) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Image sensor devices, image sensor system and forming method thereof |
| CN109346494A (en) * | 2018-11-20 | 2019-02-15 | 德淮半导体有限公司 | Phase focus image sensor and forming method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115840206A (en) * | 2021-12-14 | 2023-03-24 | 深圳市速腾聚创科技有限公司 | Laser receiver and laser radar |
| CN115840206B (en) * | 2021-12-14 | 2024-04-26 | 深圳市速腾聚创科技有限公司 | Laser receiving device and laser radar |
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