CN110767601A - Method for manufacturing groove in photoetching plate and groove etching method - Google Patents
Method for manufacturing groove in photoetching plate and groove etching method Download PDFInfo
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- CN110767601A CN110767601A CN201910859737.1A CN201910859737A CN110767601A CN 110767601 A CN110767601 A CN 110767601A CN 201910859737 A CN201910859737 A CN 201910859737A CN 110767601 A CN110767601 A CN 110767601A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
- H01L21/76852—Barrier, adhesion or liner layers the layer covering a conductive structure the layer also covering the sidewalls of the conductive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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Abstract
The application discloses a manufacturing method of a groove in a photoetching plate and a groove etching method, which comprises the steps of providing a photoetching substrate, wherein the photoetching substrate comprises a plurality of chip pattern areas and a scribing area, a plurality of first groove patterns are arranged and distributed in the chip pattern areas, each first groove pattern is used for respectively forming a first groove in one corresponding chip area, a plurality of second groove patterns are arranged and distributed in the scribing area, each second groove pattern is respectively used for forming a second groove in the scribing way, a certain angle exists between stress generated in the second groove and stress generated in the first groove, the stress is crossed in the direction, and then a plurality of chips in a wafer are mutually isolated, so that the stress in each chip can not be superposed, and the warping deformation of the whole wafer is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a manufacturing method of a groove in a photoetching plate and a groove etching method.
Background
The photolithography process is the basis for building transistors and circuits on a flat wafer (also called a silicon wafer), and includes a number of steps and processes. For example, a layer of photoresist is coated on a wafer, and then a mask or a reticle (usually called mask) with circuit patterns is irradiated with strong light, taking a positive photoresist as an example, the irradiated photoresist is deteriorated and then removed by an alkaline developer, and the non-irradiated portion will not react with the alkaline developer and remain on the wafer, so as to obtain a pattern on the wafer, which is the same as or reduced in equal proportion to the pattern on the mask.
With the rapid development of semiconductor manufacturing technology, various chips are continuously developed toward high integration, high performance, low power consumption, light weight, and lower manufacturing cost. As wafer sizes increase and thicknesses decrease, stress issues during wafer processing become increasingly important. Stresses during wafer processing can cause significant warpage in larger and thinner wafers.
The process of processing deep trench vertical devices on a large-sized wafer generally comprises: firstly, a certain groove pattern is exposed on a wafer by using a mask plate, then a groove with certain depth and characteristic dimension is obtained by using a dry etching process, and then the groove is filled. The difference of the thermal expansion coefficients exists between the groove filling material and the monocrystalline silicon substrate, the mismatch of the thermal expansion coefficients can cause the wafer to generate stress on a contact interface of the filling material and the monocrystalline silicon after the wafer is subjected to high-temperature annealing and other procedures, and the stress can cause the wafer to generate warping deformation if the stress cannot be released. And because the groove process is a three-dimensional process, the stresses of all dimensions are different, so that the stresses in the wafer are superposed, and the warping deformation of the wafer in the groove process is more serious than that of the wafer in the plane process.
Wafer warpage can be a serious hazard in the chip manufacturing process. For example, when a wafer is warped, alignment difficulty of a subsequent photolithography tool is increased, and misalignment sometimes occurs, so that electrical properties of a device are changed. In severe cases, poor adsorption occurs during wafer transfer and processing, which may result in failure of wafer feeding and even chipping.
Therefore, there is a need for improvement in the prior art to improve the wafer warpage problem.
Disclosure of Invention
In view of the above, the present invention provides a method for manufacturing a trench in a photomask and a trench etching method, which improve the warpage of a wafer.
According to an aspect of an embodiment of the present invention, there is provided a method for manufacturing a trench in a reticle, including:
providing a photoetching substrate, wherein the photoetching substrate comprises a plurality of chip pattern areas and a scribing area;
arranging a plurality of first groove patterns distributed in the plurality of chip pattern areas, wherein each first groove pattern is used for forming a first groove in a corresponding chip area; and
providing a plurality of second trench patterns distributed within the scribe area, each of the second trench patterns for forming a second trench in a scribe lane for defining an edge of each of the chip areas,
wherein at least a portion of the second trench patterns extends in a direction that is not parallel to a portion of the first trench patterns.
Preferably, each of the second groove patterns is a separate complex pattern.
Preferably, the plurality of second groove patterns are arranged at intervals.
Preferably, the plurality of second groove patterns are arranged at equal intervals.
Preferably, a pitch between the plurality of second groove patterns is 0-100 um.
Preferably, a pitch between the plurality of second groove patterns and/or a width of each of the second groove patterns is adjustable.
Preferably, the second trench pattern includes at least one rotationally symmetric figure formed by combining a long strip shape, a zigzag shape, a circular shape and a polygonal ring shape.
Preferably, the second groove pattern includes at least one rotationally asymmetric figure formed by combining a long strip shape, a broken line shape, a circular ring shape and a polygonal ring shape.
Preferably, the second groove pattern is composed of first and second folding lines having different lengths, the first and second folding lines being directed perpendicularly.
Preferably, the second groove pattern is composed of a plurality of third folding lines, and the plurality of third folding lines are arranged at equal intervals.
Preferably, the second groove pattern is composed of a plurality of first lines and second lines with different lengths, and the plurality of first lines and the plurality of second lines are arranged in a staggered and crossed manner.
Preferably, the depth of the first trench is equal to the depth of the second trench.
Preferably, the depth of the first trench is not equal to the depth of the second trench.
Preferably, the first trench and the second trench are fabricated in the same process step.
According to another aspect of the embodiments of the present invention, there is provided a trench etching method, including:
providing a wafer;
photoetching the wafer through a photoetching plate, and transferring a first groove pattern and a second groove pattern on the photoetching plate onto photoresist of the wafer to form a first photoetching pattern and a second photoetching pattern;
forming first and second trenches in chip regions and scribe lanes of the wafer according to the first and second lithographic patterns, the scribe lanes for defining edges of each of the chip regions,
wherein at least a portion of the second trench patterns extends in a direction that is not parallel to a portion of the first trench patterns.
Preferably, each of the second groove patterns is a separate complex pattern.
Preferably, the plurality of second groove patterns are arranged at intervals.
Preferably, the plurality of second groove patterns are arranged at equal intervals.
Preferably, a pitch between the plurality of second groove patterns is 0-100 um.
Preferably, a pitch between the plurality of second groove patterns and/or a width of each of the second groove patterns is adjustable.
Preferably, the second trench pattern includes at least one rotationally symmetric figure formed by combining a long strip shape, a zigzag shape, a circular shape and a polygonal ring shape.
Preferably, the second groove pattern includes at least one rotationally asymmetric figure formed by combining a long strip shape, a broken line shape, a circular ring shape and a polygonal ring shape.
Preferably, the second groove pattern is composed of first and second folding lines having different lengths, the first and second folding lines being directed perpendicularly.
Preferably, the second groove pattern is composed of a plurality of third folding lines, and the plurality of third folding lines are arranged at equal intervals.
Preferably, the second groove pattern is composed of a plurality of first lines and second lines with different lengths, and the plurality of first lines and the plurality of second lines are arranged in a staggered and crossed manner.
Preferably, the depth of the first trench is equal to the depth of the second trench.
Preferably, the depth of the first trench is not equal to the depth of the second trench.
Preferably, the first trench and the second trench are fabricated in the same process step.
Preferably, the trench etching method further includes filling a dielectric layer in the first trench and the second trench.
Preferably, the first trench and the second trench are filled with a dielectric layer in the same process step.
Preferably, the material of the dielectric layer is one or more of silicon dioxide, polysilicon, copper and tungsten.
The manufacturing method and the etching method of the groove in the photoetching plate of the invention not only form the photoetching alignment mark in the scribing region, but also arrange a plurality of second groove patterns with certain areas in the scribing region, wherein, at least part of the extending directions of the grooves in the second groove patterns are not parallel to the extending directions of the grooves in the first groove patterns. In the subsequent deep groove etching process, a certain angle exists between the stress generated in the second groove and the stress generated in the first groove, the stresses are mutually crossed in the direction, and then a plurality of chips in the wafer are mutually isolated, so that the stresses in the chips cannot be superposed, the warping deformation of the whole wafer is improved, and the alignment precision and the efficiency of the flow sheet are improved. In a preferred embodiment, the first trench and the second trench are filled simultaneously, and thus no additional process steps are added.
In addition, the second groove pattern and the first groove pattern can be manufactured on the same photoetching plate, compared with the existing scheme that the first groove pattern and the second groove pattern are manufactured on different photoetching plates, no additional process step is added, and the process is simple.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
FIG. 1 is a flow chart illustrating a method for fabricating a trench in a reticle according to a first embodiment of the present invention.
FIG. 2 shows a schematic diagram of a reticle structure according to a second embodiment of the present invention.
Fig. 3 shows several structural schematic diagrams of the second trench pattern of fig. 2.
Fig. 4 shows some other structural schematic diagrams of the second trench pattern in fig. 2.
Fig. 5 is a flow chart showing a trench etching method according to a third embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.
In the current semiconductor device manufacturing process, a wafer needs to be laid out before being manufactured, and the wafer is divided into a plurality of chip areas (chips) and scribe lanes (scriber lanes) between the chip areas. The chip area is used for forming a semiconductor device in the follow-up process, and the scribing lines are used as dividing lines for chip cutting in the packaging stage when the semiconductor device is manufactured.
In the structure design of the photolithography mask in the prior art, usually, the photolithography patterns used in the photolithography processes such as the photolithography alignment mark (alignment mark) and the overlay measurement mark (overlay mark) are formed in the scribe lanes. However, when a trench having a certain depth and a certain feature size is obtained in a chip region by using a dry etching process and the trench is filled, due to a difference in thermal expansion coefficient between a trench filling material and a single crystal silicon substrate, a stress is generated on a contact interface between the filling material and the single crystal silicon after a wafer undergoes a high temperature annealing process, and if the stress cannot be released, the wafer is subjected to local warpage deformation.
The local warpage of the wafer can cause the deviation of the alignment marks at different positions, which increases the alignment difficulty of the subsequent photolithography machine, and sometimes causes the deviation to cause the electrical property of the device to change. In severe cases, poor adsorption occurs during wafer transfer and processing, which may result in failure of wafer feeding and even chipping.
In order to solve the problem of stress superposition of wafers in a groove process, the embodiment of the invention provides a method for manufacturing a groove in a photoetching plate. As shown in fig. 1, the manufacturing method includes steps S110 to S130.
In step S110, a photolithographic substrate is provided, wherein the photolithographic substrate includes a plurality of chip pattern areas and a scribe area.
In step S120, a plurality of first trench patterns are disposed, the plurality of first trench patterns being distributed in the plurality of chip pattern regions. Each of the first trench patterns is used to form a first trench in a corresponding one of the chip regions.
In step S130, a plurality of second trench patterns are provided, the plurality of second trench patterns being distributed within the scribe area. Each of the second trench patterns is for forming a second trench in a scribe lane for defining an edge of each of the chip regions. Wherein at least a portion of the second trench patterns extends in a direction that is not parallel to a portion of the first trench patterns.
The photoetching plate of the embodiment of the invention forms a photoetching alignment mark in a scribing way of a wafer, and also arranges a plurality of second groove patterns with certain areas in the scribing way, wherein the extending direction of at least part of the second groove patterns is not parallel to the extending direction of at least part of the first groove patterns in a chip pattern area. In the subsequent deep groove etching process, a plurality of chips in the wafer are mutually isolated by the grooves formed in the scribing channels, so that the stress in each chip cannot be superposed, and the warping deformation of the whole wafer is improved.
FIG. 2 shows a schematic diagram of a reticle structure according to a second embodiment of the present invention.
As shown in fig. 2, the reticle 10 includes a photolithographic substrate 11, a plurality of chip pattern regions 12 located in the photolithographic substrate 11, and a scribe region 13 located between the plurality of chip pattern regions 12. The plurality of chip pattern regions 12 are arranged at intervals in the X direction and the Y direction of the photolithographic substrate 11, respectively. Further, the plurality of chip pattern areas 12 may be square, rectangular, or a combination thereof.
The reticle 10 corresponds to an exposure unit (shot) on the wafer, and the chip pattern region 12 and the scribe region 13 on the reticle 10 correspond to a chip region and a scribe lane on the wafer, respectively. The photolithography process is to transfer the pattern on the reticle 10 to the photoresist on the wafer surface by exposure and then development, and in order to illustrate the intention of the present invention more clearly, the sizes (width and length) of the chip pattern region 12 and the scribe region 13 on the reticle 10 are consistent with the actual sizes of the reticle transferred to the wafer. In other embodiments of the invention, the size of the features on reticle 10 may be scaled up or down. The plurality of chip pattern regions 12 are used to form a semiconductor device pattern. The semiconductor pattern is formed in a chip in the following process, and the patterns of a transistor, a resistor, a capacitor, an interconnection line and the like which need to use a photoetching structure are formed, and a plurality of semiconductor device patterns can form a complete integrated circuit.
As one non-limiting embodiment, in the trench process, each of the chip pattern regions 12 includes a plurality of first trench patterns 121. The first trench pattern 121 is used to form a first trench through photolithography and etching in a chip manufacturing process. The layout of the first trench may be designed according to a product structure, and the width of the first trench may be determined according to the product structure and process capability, and the depth may be determined according to parameters such as a withstand voltage of the product. Further, the first groove pattern 121 is shaped as a strip (shown by black lines in the figure), the plurality of strips have the same width, and the adjacent strips have the same interval.
The scribe region 13 includes a transverse (X direction shown in the figure) and a longitudinal (Y direction shown in the figure) scribe regions for forming scribe lanes which are used as dividing lines of the chip in the chip packaging process after the chip is manufactured. Scribe region 13 includes a plurality of second trench patterns 131 and a plurality of mark patterns 132. The mark pattern 132 includes a lithography pattern required in a lithography process such as a lithography alignment mark and an overlay measurement mark, and can be used for alignment in a subsequent step. At least a portion of the second trench patterns is not parallel to a portion of the first trench patterns, and the second trench patterns 131 are used for forming second trenches through photolithography and etching in a chip manufacturing process.
Further, the plurality of second trench patterns 131 in the scribe region 13 are arranged at certain intervals. Further, the plurality of second groove patterns 131 are arranged in a short-range order. That is, the plurality of second groove patterns 131 are sequentially spaced apart and have a width within a certain range. For example, the plurality of second trench patterns 131 are arranged at equal intervals in a certain area (limited area separated by the alignment mark), and the interval between the plurality of second trench patterns 131 is 0 to 100 um. Of course, in other embodiments, the intervals between the plurality of second trench patterns 131 may not be equal.
In addition, the spacing distance between the plurality of second groove patterns 131 and the width of each second groove pattern 131 may be adjustable, and the warp of the wafer may be adjusted by adjusting the spacing distance between the plurality of second groove patterns 131 and/or the width of a single second groove pattern 131.
In addition, the number and layout of the second trench patterns in the transverse scribe region and the longitudinal scribe region may be designed according to the product structure, and is not limited by this embodiment, and the depth of the second trench may be equal to the depth of the first trench, and the width of the second trench may be equal to the width of the first trench. Of course, in other embodiments, the depth of the second trench may not be equal to the depth of the first trench, or the width of the second trench may not be equal to the width of the first trench. The width and depth of the groove can be adjusted to match each other to adjust the warpage of the wafer.
Further, after the first trench and the second trench are formed, a dielectric layer is filled in the first trench and the second trench. The dielectric layer may be made of one or more of silicon dioxide, polysilicon, copper, and tungsten, and is formed by a Chemical Vapor Deposition (CVD) process.
A certain angle exists between the stress generated in the second groove and the stress generated in the first groove, the stresses are crossed in the direction, and then the multiple chips in the wafer are isolated from each other, so that the stresses in the chips cannot be superposed, and the warping deformation of the whole wafer is improved.
In the present embodiment, the second groove pattern 131 may employ a single pattern or a separate complex pattern. Preferably, the second groove pattern 131 is a separate composite pattern, that is, the second groove pattern 131 may be formed by combining a plurality of different patterns. .
Fig. 3 shows several structural schematic diagrams of the second trench pattern of fig. 2. As shown in fig. 3, the second groove pattern 131 is a rotationally asymmetric pattern formed by combining at least one of a long bar shape, a zigzag shape, a circular shape, and a polygonal ring shape. That is, the second groove pattern 131 is rotated by any angle 360 °/n (n is a positive integer greater than 1) around a certain point, and thus does not coincide with the original pattern.
As shown in fig. 3a, the second groove pattern 131 is formed by a combination of the first folding line 1311 and the second folding line 1312. The length of the first folding line 1311 is greater than the length of the second folding line 1312, and the first folding line 1311 is directed perpendicular to or opposite to the direction of the second folding line 1312. Here, the first folding line 1311 and the second folding line 1312 are directed in the direction in which the bent portions of the first folding line and the second folding line are directed.
As shown in fig. 3b, in another embodiment, the second groove pattern 131 is formed by a combination of a plurality of third folding lines 1313, the plurality of third folding lines 1313 being directed in the same direction. The third folding lines 1313 are arranged at intervals, and the intervals between the third folding lines 1313 are equal.
In yet another embodiment, as shown in fig. 3c, the second trench pattern 131 is formed by a combination of a plurality of long stripes 1314 and a plurality of short stripes 1315. The plurality of short strips 1315 and the plurality of long strips 1314 are arranged in a 90-degree staggered and crossed manner.
Fig. 4 shows some other structural schematic diagrams of the second trench pattern in fig. 2. In another embodiment, the second trench pattern is a rotationally symmetric pattern formed by combining at least one of a long bar shape, a zigzag shape, a circular shape and a polygonal ring shape. The rotationally symmetrical graph is a graph which is superposed with an initial graph after rotating the graph by an angle of 360 DEG/n (n is a positive integer larger than 1) around a certain point.
As shown in fig. 4a, the second groove pattern 131 is formed by a plurality of strips 1316, and the strips 1316 are staggered and arranged at a certain angle. As shown in fig. 4a, the plurality of strip-shaped 1316 is arranged in a staggered and crossed manner to form a shape similar to a Chinese knot. In another embodiment, as shown in fig. 4b, the plurality of elongated strips 1316 are vertically staggered and intersected to form a "grid" shape.
In fig. 4c to 4e, the second trench pattern is formed by combining a polygonal ring shape, a circular ring shape, or a long bar shape. As shown in fig. 4c, the second trench pattern 131 includes a circular ring 1317 and a four-sided ring 1318, and the four-sided ring 1318 may be square, rectangular, or other shapes. The four-sided ring 1318 is located inside the ring 1317, and the centers of the two coincide. In another embodiment, shown in FIG. 4d, the ring 1317 is located inside the quadrilateral ring 1318 with their centers coinciding. In yet another embodiment, as shown in fig. 4e, the second trench pattern 131 includes a circular ring 1317 and a plurality of strips 1319, the strips 1319 are disposed in the circular ring 1317 in a crossed manner, and the crossed point of the strips 1319 is located at a center of the circular ring 1317.
It should be noted that the shape of the second trench pattern is not limited to the above embodiments, and those skilled in the art can select any shape and combination thereof to fabricate the second trench pattern according to specific situations.
In summary, in the photolithography mask of the present invention, some lines in the second trench pattern always form a certain angle with the lines in the first trench pattern, thereby realizing 360 ° isolation of each chip region, so that the stress between each chip cannot be superimposed, thereby improving the warpage of the entire wafer.
In addition, in the embodiment, the second trench pattern and the first trench pattern can be fabricated on the same reticle, and compared with the existing scheme of fabricating the first trench pattern and the second trench pattern on different reticles, no additional process step is added, and the process is simple.
Fig. 5 shows a flow chart of a trench etching method according to a third embodiment of the invention. The groove etching method can adopt the photoetching plate in the embodiment to complete the photoetching step. As shown in FIG. 5, the trench etching method includes steps S210-S240.
In step S210, a wafer is provided. And providing a wafer needing groove etching, and finishing the processing steps before the groove etching. The wafer may be a silicon substrate, a germanium-silicon substrate, a iii-v compound substrate, or other semiconductor materials known to those skilled in the art, and a silicon substrate is used in this embodiment. Further, the silicon substrate used in this embodiment may be formed with semiconductor devices such as a metal oxide semiconductor field effect transistor, an insulated gate field effect transistor, and a schottky diode. The wafer can also be doped with N type and P type with a certain impurity amount according to the characteristics of the required product.
In step S220, the wafer is subjected to photolithography by a reticle to form a first photolithography pattern and a second photolithography pattern on the photoresist. Specifically, after the photoresist is coated on the wafer, the photolithography mask of the above embodiment is used for exposure and development, and the first trench pattern and the second trench pattern are transferred onto the photoresist to form a first photolithography pattern and a second photolithography pattern, respectively. The first groove pattern is located in a chip pattern area of a photoetching plate, the second groove pattern is located in a scribing area of the photoetching plate, the chip pattern area and the scribing area on the photoetching plate respectively correspond to a chip area (chip) and a scribing way on a wafer, and the scribing way is used for limiting the edge of each chip area.
In step S230, first and second trenches are formed in the wafer according to the first and second lithographic patterns. Specifically, dry etching is performed by taking the photoresist as a mask, reaction gas passes through a pattern in the first photoetching pattern to be in contact with the wafer, a first groove is etched, and reaction gas passes through the second photoetching pattern to be in contact with the wafer, and a second groove is etched. In this step, the first trench and the second trench are formed in the same process step without adding an additional process step. The widths of the first and second trenches may be determined according to the product structure and process capability, and the depths may be determined according to the withstand voltage of the product, etc. Further, the depth of the second trench may be equal to the depth of the first trench, and the width of the second trench may be equal to the width of the first trench. Of course, in other embodiments, the depth of the second trench may not be equal to the depth of the first trench, or the width of the second trench may not be equal to the width of the first trench. The width and depth of the groove can be adjusted to match each other to adjust the warpage of the wafer.
In step S240, a dielectric layer is filled in the first trench and the second trench. Specifically, the material of the dielectric layer may be one or more combinations of silicon dioxide, polysilicon, copper, and tungsten, and is formed by using a process such as CVD (Chemical vapor deposition). In the step, the first groove and the second groove are filled simultaneously, compared with a scheme of separately filling, no additional process step is added, and the process is simple. And after the medium is filled, when the warping degree of the whole silicon wafer cannot meet the requirement, the second groove in the scribing region is widened to improve the warping degree.
In summary, in the method for manufacturing a trench in a reticle and the trench etching method according to the embodiments of the present invention, besides forming the lithography alignment mark in the scribe region, a plurality of second trench patterns having a certain area are arranged in the scribe region, and at least a part of the second trench patterns is not parallel to a part of the first trench patterns. In the subsequent deep groove etching process, a certain angle exists between the stress generated in the second groove and the stress generated in the first groove, the stresses are mutually crossed in the direction, and then a plurality of chips in the wafer are mutually isolated, so that the stresses in the chips cannot be superposed, the warping deformation of the whole wafer is improved, and the alignment precision and the efficiency of the flow sheet are improved. In a preferred embodiment, the first trench and the second trench are filled simultaneously, and thus no additional process steps are added.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (31)
1. A method of forming a trench in a reticle, comprising:
providing a photoetching substrate, wherein the photoetching substrate comprises a plurality of chip pattern areas and a scribing area;
arranging a plurality of first groove patterns distributed in the plurality of chip pattern areas, wherein each first groove pattern is used for forming a first groove in a corresponding chip area; and
providing a plurality of second trench patterns distributed within the scribe area, each of the second trench patterns for forming a second trench in a scribe lane for defining an edge of each of the chip areas,
wherein at least a portion of the second trench patterns extends in a direction that is not parallel to a portion of the first trench patterns.
2. The method of claim 1, wherein each of the second trench patterns is a separate composite pattern.
3. The method of claim 2, wherein the plurality of second trench patterns are arranged at intervals.
4. The method of claim 3, wherein the plurality of second trench patterns are arranged at equal intervals.
5. The method of claim 4, wherein the second trench patterns have a pitch of 0-100 um.
6. The method of claim 3, wherein a pitch between the plurality of second trench patterns and/or a width of each of the second trench patterns is adjustable.
7. The method of claim 2, wherein the second trench pattern comprises at least one rotationally symmetric pattern of a combination of a long stripe shape, a zigzag shape, a circular shape, and a polygonal ring shape.
8. The method of claim 2, wherein the second trench pattern comprises at least one rotationally asymmetric pattern of a combination of a stripe, a zigzag, a circular, and a polygonal ring.
9. The method of claim 8, wherein the second groove pattern comprises a first fold line and a second fold line having different lengths, and the first fold line and the second fold line are oriented vertically.
10. The method of claim 8, wherein the second pattern of grooves is comprised of a plurality of third fold lines, the plurality of third fold lines being equally spaced apart.
11. The method of claim 8, wherein the second trench pattern comprises a plurality of first lines and second lines having different lengths, and the plurality of first lines and the plurality of second lines are staggered and crossed.
12. The method of claim 1, wherein the first trench has a depth equal to a depth of the second trench.
13. The method of claim 1, wherein the depth of the first trench is not equal to the depth of the second trench.
14. The method of claim 1, wherein the first trench and the second trench are formed in the same process step.
15. A trench etching method is characterized by comprising the following steps:
providing a wafer;
photoetching the wafer through a photoetching plate, and transferring a first groove pattern and a second groove pattern on the photoetching plate onto photoresist of the wafer to form a first photoetching pattern and a second photoetching pattern;
forming first and second trenches in chip regions and scribe lanes of the wafer according to the first and second lithographic patterns, the scribe lanes for defining edges of each of the chip regions,
wherein at least a portion of the second trench patterns extends in a direction that is not parallel to a portion of the first trench patterns.
16. The trench etching method of claim 15, wherein each of the second trench patterns is a separate composite pattern.
17. The trench etching method of claim 16, wherein the plurality of second trench patterns are arranged at intervals.
18. The trench etching method of claim 17, wherein the plurality of second trench patterns are arranged at equal intervals.
19. The trench etching method of claim 18, wherein a pitch between the plurality of second trench patterns is 0-100 um.
20. The trench etching method of claim 17, wherein a pitch between the plurality of second trench patterns and/or a width of each of the second trench patterns is adjustable.
21. The trench etching method of claim 16, wherein the second trench pattern comprises at least one rotationally symmetric pattern of a combination of a long stripe shape, a zigzag shape, a circular ring shape, and a polygonal ring shape.
22. The trench etching method of claim 16, wherein the second trench pattern comprises at least one rotationally asymmetric pattern of a combination of a long stripe shape, a zigzag shape, a circular shape, and a polygonal shape.
23. The trench etching method of claim 22, wherein the second trench pattern is composed of a first folding line and a second folding line having different lengths, the first folding line and the second folding line being directed perpendicularly.
24. The trench etching method of claim 22, wherein the second trench pattern is comprised of a plurality of third folds, the plurality of third folds being equally spaced.
25. The trench etching method of claim 22, wherein the second trench pattern is composed of a plurality of first lines and second lines having different lengths, and the plurality of first lines and the plurality of second lines are arranged in a staggered and crossing manner.
26. The trench etching method of claim 15, wherein a depth of the first trench is equal to a depth of the second trench.
27. The trench etching method of claim 15 wherein the depth of the first trench is not equal to the depth of the second trench.
28. The trench etching method of claim 15, wherein the first trench and the second trench are fabricated in the same process step.
29. The trench etching method of claim 15, further comprising filling a dielectric layer in the first trench and the second trench.
30. The trench etching method of claim 29 wherein the first trench and the second trench are filled with a dielectric layer in the same process step.
31. The trench etching method of claim 29 wherein the dielectric layer is made of one or more of silicon dioxide, polysilicon, copper, and tungsten.
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