CN110752134B - Sample table for plasma device - Google Patents

Sample table for plasma device Download PDF

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Publication number
CN110752134B
CN110752134B CN201910992808.5A CN201910992808A CN110752134B CN 110752134 B CN110752134 B CN 110752134B CN 201910992808 A CN201910992808 A CN 201910992808A CN 110752134 B CN110752134 B CN 110752134B
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China
Prior art keywords
sample
seat
insulating part
sample material
chamber
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CN201910992808.5A
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Chinese (zh)
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CN110752134A (en
Inventor
陈晓莉
李波
吴杰峰
韦俊
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HEFEI JUNENG ELECTRO PHYSICS HIGH-TECH DEVELOPMENT CO LTD
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HEFEI JUNENG ELECTRO PHYSICS HIGH-TECH DEVELOPMENT CO LTD
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Publication of CN110752134A publication Critical patent/CN110752134A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00Energy generation of nuclear origin
    • Y02E30/10Nuclear fusion reactors

Abstract

The invention discloses a sample stage for a plasma device, which comprises a sample seat, wherein a plurality of sample material placing cavities are formed in the sample seat, a sample seat pushing device used for pushing the sample seat into a vacuum chamber is formed in one side of the sample seat, the sample seat comprises a base plate, a lower insulating piece is embedded in the center of the top surface of the base plate, the top surface of the lower insulating piece is in an outer arc shape, upper insulating pieces which are spaced from each other are symmetrically arranged at two ends of the base plate, the sample material placing cavities are formed by spaces formed between the lower insulating pieces and the two upper insulating pieces, and the end surfaces, facing the sample material placing cavities, of the upper insulating pieces are in an inner arc shape. The invention utilizes the principle that the different prestress of the sample material directly influences the ion incident energy, and can effectively control the change of the prestress of the sample material by utilizing the structures of the insulating part and the like for clamping the sample material, thereby achieving the effect of controlling the ion incident energy.

Description

Sample table for plasma device
Technical Field
The invention relates to the technical field of plasma devices, in particular to a sample table for a plasma device.
Background
Plasma devices are commonly used to study fundamental problems of plasma interaction with materials, such as physical sputtering and chemical etching of materials, hydrogen and helium entrapment/blistering problems in materials, simulation of the effects of plasma cracking on materials, and the like.
Since the plasma device generates a large amount of plasma, the center thereof is a high radiation region, and a large amount of heat is generated. When the device is applied to the experimental fields of fusion engineering, high-energy physics and the like, the working area of the device is an ultrahigh vacuum degree environment, and the ultimate vacuum degree of a vacuum chamber is as follows: not more than 1 x 10 < -5 > Pa, therefore, the plasma device not only needs to be baked at high temperature, but also needs to meet the requirement that the leakage rate of the whole vacuum chamber cover is less than 1 x 10 < -10 > Pa.m < 3 >/s.
At present, though the sample platform to the centre gripping of sample and temperature control has existed among plasma and the material interact's the device, in experimental fields such as fusion engineering, high energy physics, not only have high requirement to the degree of accuracy of vacuum, cooling efficiency, experimental parameters, it is also comparatively strict in the requirement of sample position removal convenience and positioning accuracy in addition, still need use multiunit sample material to act on simultaneously to obtain more reliable multiunit experimental parameters, better carry out experimental analysis. Most of the sample stages of the plasma devices in the prior art cannot meet the requirements.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a sample table for a plasma device, which is particularly suitable for the experimental fields of fusion engineering, high-energy physics and the like.
A sample stage for a plasma apparatus, comprising a sample holder; the utility model discloses a vacuum chamber's sample seat, including sample seat, insulating part, radiation protection plate, sample seat, and cooling device, set up a plurality of sample materials on the sample seat and place the chamber, sample seat one side is seted up and is used for pushing its sample seat pusher in the real empty room, the sample seat includes the base plate, base plate top surface center inlays and is equipped with down insulating part, lower insulating part top surface is outer circular-arc, both ends symmetry is equipped with each other and is the spaced last insulating part that forms between insulating part, sample material places the chamber and constitutes by lower insulating part and two last spaces that form, it is interior circular-arc to go up the terminal surface that insulating part placed the chamber towards sample material, the another side of going up insulating part is equipped with the radiation protection plate, set up the breach that is used for exposing sample material and places the chamber on the radiation protection plate, the radiation protection plate is equipped with the closing device that is used for adjusting the sample material to place the chamber sample material and compresses tightly the dynamics, the bottom surface of base plate is equipped with cooling device.
As a further description of the above technical solution:
the sample seat pushing device comprises a corrugated pipe, and the corrugated pipe is connected with the sample seat and arranged in a sliding platform for pushing the sample seat to move.
As a further description of the above technical solution:
the radiation-proof plate is a molybdenum plate, and the pressing device comprises a round-head molybdenum bolt which penetrates through the molybdenum plate and the upper insulating part and is connected to the substrate.
As a further description of the above technical solution:
the cooling device is a cold water tank arranged on the bottom surface of the substrate.
The invention utilizes the principle that the different prestress of the sample material directly influences the ion incident energy, and can effectively control the change of the prestress of the sample material by utilizing the structures of the insulating part and the like for clamping the sample material, thereby achieving the effect of controlling the ion incident energy. Combine pusher, sample seat to go up a plurality of sample materials and place the setting on the chamber, not only can obtain more reliable multiunit experimental parameters, the better analysis of experimenting makes sample position remove convenient, the location is accurate moreover, required vacuum in addition, cooling requirement homoenergetic satisfy higher requirement, but wide application in experimental fields such as fusion engineering, high energy physics.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of the present invention in use;
fig. 2 is a schematic structural diagram of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, and the scope of the present invention will be more clearly and clearly defined.
Referring to fig. 1, the sample stage for a plasma device provided by the invention comprises a sample holder 1 and a sample holder pushing device 2, wherein four sample material placing cavities 3 are formed in the sample holder 1, the sample holder 1 is positioned on one side of the center of a vacuum chamber 4 (the vacuum chamber 4 is a working area of a plasma device and generates a large amount of plasma), the sample holder 1 sends a sample material in the sample material placing cavity 3 to the center of the vacuum chamber 4 through the sample holder pushing device 2 for detection, in combination with fig. 2, the sample holder 1 comprises a substrate 11, the substrate 11 can be made of an oxygen-free copper material with excellent heat dissipation performance, a lower insulating member 12 is embedded in the center of the top surface of the substrate 11, the top surface of the lower insulating member 12 is in an outer arc shape, upper insulating members 13 which are spaced from each other are symmetrically arranged at two ends of the upper insulating member 13, and the sample material placing cavity 3 is formed by a space formed between the lower insulating member 12 and the two upper insulating members 13, the sample material is installed and is insulated in upper and lower insulating part, and it is interior circular-arc to go up the terminal surface that insulating part 13 placed chamber 3 towards the sample material, and the another side of going up insulating part 13 is equipped with radiation protection board 14, offers the breach that is used for exposing the sample material and places chamber 3 on the radiation protection board 14, and radiation protection board 14 is equipped with the closing device 15 that is used for adjusting upper insulating part 13 and places the sample material in chamber 3 and compress tightly the dynamics to the sample material outward, and the bottom surface of base plate 11 is equipped with cooling device 16.
During the use, corresponding four sample material 5 put into four sample material and place chamber 3, four sample material place chamber 3 equidistance equipartition, arrange in proper order on sample seat 1, the direction of arrangement is unanimous with sample seat pusher 2 moving direction. The sample holder 1 is pushed into the central position of the vacuum chamber 1 by the sample holder pushing device 2, four sample materials 5 are all in the vacuum environment of the plasma center, each sample material 5 is limited by the lower insulating part 12 and the two upper insulating parts 13 and is fixed in the sample material placing cavity 3 in an arc state (S in figure 2), and then the pressing force is transmitted to the sample materials 5 through the arc surface of the upper insulating part 13 by adjusting the pressing device 15, so that the sample materials 5 generate pre-pressure.
Since the different pre-stresses of the sample material 5 can directly influence the ion incident energy, different pre-stresses are generated on the sample material 5 by adjusting the magnitude of the pressing force, so that the pre-stress is applied to the sample material 5 under the (ultra-high) vacuum condition, the ion incident energy is controlled, and more accurate experimental parameters are obtained. And simultaneously, four groups of sample materials 5 are used for acting so as to obtain more reliable four groups of experimental parameters and better perform experimental analysis. In order to ensure the heat dissipation performance of the apparatus during use, the sample stage is cooled by providing a cooling device 16 on the bottom surface of the base plate 11.
Example 1
As an optimization explanation of the technical scheme:
referring to fig. 1, the sample holder pushing device 2 includes a bellows 21, and the bellows 21 is connected to the sample holder 1 and disposed in a slide platform 22 for pushing the movement thereof.
When the sample holder is used, the corrugated pipe 21 is controlled by the sliding platform to realize movement and positioning, and the shrinkage of the corrugated pipe 21 is the movement displacement of the sample holder 1. The pushing structure is simple in structure and convenient to operate, and can meet various moving distances required by the sample holder 1 by utilizing different compression amounts of the corrugated pipe 21, so that each sample material can be respectively positioned in the plasma center when interacting.
Example 2
As an optimization explanation of the technical scheme:
the radiation protection plate 14 is a molybdenum plate, and the pressing device 15 includes a round-head molybdenum bolt 151 penetrating through the molybdenum plate and the upper insulator 13 and connected to the substrate 11. When the molybdenum base plate is used, the round-head molybdenum bolts 151 are screwed tightly, so that the binding force of the molybdenum plate, the upper insulating piece 13 and the base plate 11 is improved, and the binding force is loosened. Adopt molybdenum plate and button head molybdenum bolt 151 as the mechanism of protecting against radiation and compress tightly, not only simple structure convenient operation can guarantee better radiation protection effect also, guarantees the stable use of whole sample platform.
Example 3
As an optimization explanation of the technical scheme:
the cooling device 16 is a cold water tank provided on the bottom surface of the base plate 11. The sample holder is simple in structure and convenient to operate, and has the significance of saving the occupied space of the sample holder.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.

Claims (4)

1. The utility model provides a sample platform for plasma device, includes the sample seat, seted up a plurality of sample materials on the sample seat and placed the chamber, sample seat one side is offered and is used for pushing its sample seat pusher in real empty room, the sample seat includes the base plate, and base plate top surface center inlays and is equipped with down insulating part, and both ends symmetry is equipped with each other and is the spaced last insulating part that goes up, and the sample material is placed the chamber and is constituted by the space that forms between lower insulating part and the two last insulating parts, its characterized in that: the utility model discloses a sample material storage cavity, including the insulating part, the insulating part top surface is outer circular-arc down, goes up the insulating part and places the terminal surface in chamber towards the sample material and be interior circular-arc, and the another side of going up the insulating part is equipped with the radiation protection board, offers on the radiation protection board to be used for exposing the breach that the sample material placed the chamber, and the radiation protection board is equipped with the closing device that is arranged in adjusting the sample material to place the sample material and compresses tightly the dynamics in the chamber outward, and the bottom surface of base plate is equipped with cooling device.
2. A sample stage for a plasma apparatus according to claim 1, wherein: the sample seat pushing device comprises a corrugated pipe, and the corrugated pipe is connected with the sample seat and arranged in a sliding platform for pushing the sample seat to move.
3. A sample stage for a plasma apparatus according to claim 1 or 2, wherein: the radiation-proof plate is a molybdenum plate, and the pressing device comprises a round-head molybdenum bolt which penetrates through the molybdenum plate and the upper insulating part and is connected to the substrate.
4. A sample stage for a plasma apparatus according to claim 1 or 2, wherein: the cooling device is a cold water tank arranged on the bottom surface of the substrate.
CN201910992808.5A 2019-10-18 2019-10-18 Sample table for plasma device Active CN110752134B (en)

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CN110752134B true CN110752134B (en) 2022-06-03

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08254488A (en) * 1995-03-17 1996-10-01 Nec Corp Sample holder of secondary ion mass-spectrometric device of double converging type
CN101750427A (en) * 2009-12-31 2010-06-23 中国科学院等离子体物理研究所 Temperature controlling sample holder capable of adjusting incident ion energy and monitoring ion flux in real time
CN102222528A (en) * 2011-04-11 2011-10-19 核工业西南物理研究院 First mirror sample irradiation support and irradiation method
WO2013069722A1 (en) * 2011-11-09 2013-05-16 株式会社日立ハイテクノロジーズ Sample positioning apparatus, sample stage, and charged particle beam apparatus
CN105206490A (en) * 2014-06-19 2015-12-30 西安福安创意咨询有限责任公司 Multiple-combination sample target frame

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08254488A (en) * 1995-03-17 1996-10-01 Nec Corp Sample holder of secondary ion mass-spectrometric device of double converging type
CN101750427A (en) * 2009-12-31 2010-06-23 中国科学院等离子体物理研究所 Temperature controlling sample holder capable of adjusting incident ion energy and monitoring ion flux in real time
CN102222528A (en) * 2011-04-11 2011-10-19 核工业西南物理研究院 First mirror sample irradiation support and irradiation method
WO2013069722A1 (en) * 2011-11-09 2013-05-16 株式会社日立ハイテクノロジーズ Sample positioning apparatus, sample stage, and charged particle beam apparatus
CN105206490A (en) * 2014-06-19 2015-12-30 西安福安创意咨询有限责任公司 Multiple-combination sample target frame

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