CN110739358A - gold-lead sulfide core-shell nanorod photodetectors and preparation method thereof - Google Patents

gold-lead sulfide core-shell nanorod photodetectors and preparation method thereof Download PDF

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CN110739358A
CN110739358A CN201910911738.6A CN201910911738A CN110739358A CN 110739358 A CN110739358 A CN 110739358A CN 201910911738 A CN201910911738 A CN 201910911738A CN 110739358 A CN110739358 A CN 110739358A
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gold
lead sulfide
nanorod
sulfide core
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赵新宏
常新月
段永胜
李凯
方永初
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Jiangsu University
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Abstract

The invention provides gold-lead sulfide core-shell nanorod photodetectors and a preparation method thereof, wherein gold lead sulfide core-shell nanorods Au-PbS NRs with good crystallinity are prepared by a three-step cation displacement method, the growth process of a shell layer can be divided into three steps, step grows layers of silver around the gold nanorods, step two generates silver sulfide through a vulcanization reaction, step three prepares a lead sulfide shell layer through a cation exchange reaction, and then, the Au-PbS NRs photodetectors based on field effect phototransistors are prepared by using a liquid phase spin coating technology.

Description

gold-lead sulfide core-shell nanorod photodetectors and preparation method thereof
Technical Field
The invention belongs to the field of optoelectronic devices, and particularly relates to gold-lead sulfide core-shell nanorod photodetectors and a preparation method thereof.
Background
The photodetector is a core component of an optoelectronic system, and can convert an optical signal into a storable electrical signal, and after the electrical signal is specially processed according to different requirements, the photodetector is widely used in various fields such as biology, medicine, military and the like.
Lead sulfide (PbS) has a larger exciton Bohr radius (18nm) and a smaller forbidden band width (0.4eV), and the forbidden band width can be continuously adjusted between 0.4-2.0eV through quantum confinement effect, so that efficient absorption of light within the range of 600nm-3000nm can be realized.
The near infrared photoelectric detector has a larger market prospect due to the characteristics of low refrigeration requirement, simple process, excellent performance and the like. Currently, the mainstream product of the near infrared photodetector is an indium gallium arsenic photodiode, but the near infrared photodetector requires a high lattice matching degree, a large material consumption, and a complex array interconnection technology, so that the manufacturing cost of the device is greatly increased.
Disclosure of Invention
Aiming at the defects of complex manufacturing process, high cost and poor detection performance of the existing optical detector device, the invention provides gold-lead sulfide core-shell nanorod optical detectors and a preparation method thereof, the device performance is enhanced by the combination of the gold nanorods and the lead sulfide semiconductor, and the optical detector is gold-lead sulfide core-shell nanorods optical detector preparation methods which are more stable, easy to operate and capable of being used in a large range.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the preparation process of kinds of gold-lead sulfide core-shell nanometer rod light detector includes the following steps:
step S1, preparation of gold nanorods
Preparing a seed solution: the chloroauric acid tetrahydrate HAuCl4·4H2Adding O into a CTAB solution of hexadecyl trimethyl ammonium bromide, adding a sodium borohydride solution into the CTAB solution, and standing to prepare a light brown gold seed solution;
preparing a growth solution: adding silver nitrate solution into cetyl trimethyl ammonium bromide CTAB solution, stirring, adding chloroauric acid tetrahydrate HAuCl4·4H2Preparing a growth solution from an O solution, a hydrochloric acid solution and an ascorbic acid solution;
preparing a gold nanorod solution: adding the gold seed solution into the growth solution, stirring and standing;
step S2, preparation of gold-lead sulfide core-shell nano rod
Mixing a gold nanorod solution and a glycine solution, adding a sodium hydroxide solution and a silver nitrate solution, stirring, standing in a water bath, keeping the temperature, coating layers of silver nanoshells on the periphery of the gold nanorod, adding excess sulfur powder, keeping the temperature, converting the silver nanoshells into silver sulfide shells through a vulcanization reaction, centrifuging to remove the excess sulfur powder, adding a lead nitrate solution, stirring, adding sodium borohydride, placing in the water bath, keeping the temperature, forming lead sulfide nanoshells through a cation exchange reaction, and re-dispersing precipitates obtained after the solution is centrifuged to remove the supernatant in distilled water to obtain a gold-lead sulfide core-shell nanorod solution;
step S3, preparation of gold-lead sulfide core-shell nanorod structured back-grid field effect phototransistor
SiO2A gate dielectric layer arranged on the gate electrode of n-doped Si and on the SiO layer2An Au source electrode and an Au drain electrode are arranged on the gate dielectric layer to prepare a back gate substrate, the gold-lead sulfide core-shell nanorod solution is dripped on the back gate substrate and is spin-coated on the back gate substrate, then vacuum drying is carried out, a hexadecyl trimethyl ammonium bromide methanol solution is dripped on a rotating film, and then vacuum drying is carried out after the film is cleaned by methanol;
step S4, external circuit and package
And respectively leading out an Au source electrode, an Au drain electrode and an n-doped Si gate electrode on the back gate substrate by using wires, fixing the Au source electrode, the Au drain electrode and the n-doped Si gate electrode by using silver colloid, and then packaging the fixed Au source electrode, the Au drain electrode and the n-doped Si gate electrode by using an insulating material to obtain the gold-lead sulfide core-shell nanorod photodetector.
In the above scheme, in the preparation of the growth liquid in step S1: first, 12mL of 0.1M silver nitrate solution was added to 6mL of 0.2M cetyltrimethylammonium bromide CTAB solution, and after stirring, 1.2mL of 5mM chloroauric acid tetrahydrate HAuCl was added4·4H2And mixing the O solution uniformly.
In the above scheme, in the preparation of the seed solution in step S1: the sodium borohydride solution is a freshly prepared ice-cold sodium borohydride solution.
In the foregoing solution, the step S2 specifically includes:
mixing 5mL of gold nanorod solution with glycine solution, adding sodium hydroxide solution and silver nitrate solution, stirring, standing in a water bath at 30-35 ℃ for heat preservation for 10 hours, adding excessive sulfur powder, continuing to preserve heat for 10 hours, centrifuging to remove excessive sulfur powder, adding lead nitrate solution, stirring for 30 minutes, adding sodium borohydride, placing in a water bath at 45-55 ℃ for heat preservation for 0.5 hour, and re-dispersing precipitate obtained after centrifuging the solution to remove supernatant in distilled water to obtain the gold-lead sulfide core-shell nanorod solution.
, the sodium borohydride in the step S2 is a newly prepared ice-cold sodium borohydride solution, the prepared shell has a better shape, and the sodium borohydride is added dropwise to enable the reaction to be more complete and control the growth state of the shell.
, the centrifugal speed of the step S2 of removing the excessive sulfur powder by centrifugation is lower than 1500 revolutions per minute, which can better remove the sulfur powder and reduce the loss of the nano-rods.
, the solution centrifugation time in the step S2 is 4-5 minutes, the rotation speed is 7600 and 8200 rpm, and the centrifugation effect is better.
In the above scheme, the spin speed in step S3 is 2200-.
In the above scheme, in step S4, the insulating material is polydimethylsiloxane or polystyrene, and the conducting wire is a silver wire or a copper wire.
types of gold-lead sulfide core-shell nanorod photodetectors, wherein the gold-lead sulfide core-shell nanorod photodetectors are prepared by the preparation method of the gold-lead sulfide core-shell nanorod photodetectors.
Compared with the prior art, the invention has the beneficial effects that:
the invention relates to manufacturing methods for preparing photodetectors based on gold-lead sulfide core-shell nanorod structures at room temperature in an unprotected environment by adopting a simple low-cost liquid phase spin coating method. three-step cation displacement methods can be used for simply preparing gold-lead sulfide core-shell nanorod structures in a solution.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a flow chart of the synthesis of gold-lead sulfide core-shell nanorods according to an embodiment of the present invention ;
FIG. 2 is a transmission electron micrograph of an embodiment of nanoparticles of the invention, wherein FIG. 2(a) is a transmission electron micrograph of Au-PbS NRs, FIG. 2(b) is an enlarged view of the area of FIG. 2(a), FIG. 2(c) is a transmission electron micrograph of a single Au-PbS NR, FIG. 2(d) is a high resolution transmission electron micrograph of the corresponding area of FIG. 2(c), and the inset in FIG. 2(d) is a fast Fourier transform electron diffraction (FFT) map;
FIG. 3 is a schematic diagram of an Au-PbS NRs FET according to an embodiment of the present invention at , FIG. 3(a) is a schematic diagram of a structure of an Au-PbSNRs FET, and FIG. 3(b) is a cross-sectional SEM diagram of an Au-PbS NRs FET;
FIG. 4 shows the responsivity of an Au-PbS NRs photodetector according to an embodiment of the present invention, FIG. 4(a) the responsivity, V, of an Au-PbS NRs photodetector excited at 808nm with different optical power densitiesG=VSD-4V, fig. 4(b) spectral responsivity of Au-PbS NRs photodetector, VG=VSD=-4V;
FIG. 5 shows the detection rate of an Au-PbS NRs photodetector according to an embodiment of the present invention, and FIG. 5(a) shows the detection rate of an Au-PbS NRs photodetector excited at 808nm with different optical power densities, VG=VSD-4V, fig. 5(b) spectral detectivity of Au-PbS NRs photodetector, VG=VSD=-4V;
FIG. 6 shows external quantum efficiency and quantum efficiency spectra of an Au-PbS NRs photodetector according to an embodiment of the present invention, FIG. 6(a) external quantum efficiency, V, of an Au-PbS NRs photodetector excited at 808nm with different optical power densitiesG=VSDFig. 6(b) quantum efficiency spectrum of Au-PbS NRs photodetector at-4V.
In the figure, 1.Au source; 2, Au drain electrode; SiO2A gate dielectric layer; n-doped Si gate electrode; 5. gold-lead sulfide core-shell nanorods.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
As shown in FIG. 1, embodiments of the method for manufacturing a gold-lead sulfide core-shell nanorod photodetector of the present invention are provided, wherein the method for manufacturing a gold-lead sulfide core-shell nanorod photodetector includes steps of firstly manufacturing a gold lead sulfide core-shell nanorod Au-PbS NRs with good crystallinity by a three-step cation exchange method, and a manufacturing process of the gold lead sulfide core-shell nanorod Au-PbS NRs is as shown in FIG. 1. the growth process of the shell layer is divided into three steps, wherein a step forms silver layers around the gold nanorod, a second step forms silver sulfide by a sulfidation reaction, a third step forms a lead sulfide shell layer by a cation exchange reaction, and then a liquid phase spin coating technique is used to manufacture an Au-PbS NRs photodetector based on a field effect phototransistor.
preparation of gold-lead sulfide core-shell nano rod
Step S1, preparing gold nanorods Au NRs:
seed liquid: 10mL of 0.5mM chloroauric acid tetrahydrate HAuCl4·4H2The O solution was added to 10mL of 0.2M CTAB cetyltrimethylammonium bromide solution, stirred gently and mixed well. 1.2mL of a freshly prepared 0.01M ice-cooled sodium borohydride solution was added thereto, the solution turned light brown, stirred for 30 seconds, and then allowed to stand at room temperature for 30 minutes.
Growth liquid: mu.L of 0.1M silver nitrate solution was added to 6mL of 0.2M cetyltrimethylammonium bromide CTAB solution, gently stirred and added with 1.2mL of 5mM chloroauric acid tetrahydrate HAuCl4·4H2And (4) mixing the solution O uniformly. Then 12. mu.L of 2.0M hydrochloric acid solution was added with gentle stirring, and 66. mu.L of 0.1M ascorbic acid solution was added and the solution became colorless after stirring.
Preparing a gold nanorod solution: mu.L of the seed solution was added to the growth liquid, gently stirred for 10 seconds, and allowed to stand at room temperature for 10 hours.
Step S2, preparation of gold-lead sulfide core-shell nano rod
Mixing a gold nanorod solution with a glycine solution, adding a sodium hydroxide solution and a silver nitrate solution, stirring, standing in a water bath for heat preservation, coating layers of silver nanoshells on the periphery of the gold nanorod, adding excess sulfur powder, continuing heat preservation, converting into a silver sulfide shell layer through a vulcanization reaction, centrifuging to remove the excess sulfur powder, adding a lead nitrate solution, stirring, adding sodium borohydride, placing in the water bath for heat preservation, forming a lead sulfide nanosheet layer through a cation exchange reaction, and re-dispersing a precipitate obtained by centrifuging the solution to remove a supernatant in distilled water to obtain the gold-lead sulfide core-shell nanorod solution, wherein the method comprises the following steps of:
preparation of Au-Ag NRs: 5ml of Au NRs stock solution is taken to be uniformly mixed with 5ml of 0.2M glycine solution, 150 mu L of 2M sodium hydroxide solution is added to be slightly stirred, 15 mu L of 0.1M silver nitrate solution is added to be slightly stirred to be uniform, and the mixed solution is stood in a water bath to be kept at the temperature of 32 ℃ for 10 hours.
Au-Ag2Preparation of S NRs: excess sulfur powder was added to the mixed solution, and the mixture was allowed to stand still in a water bath at 32 ℃ for 10 hours.
Preparation of Au-PbS NRs: after removing excess sulfur powder by centrifugation at low speed, 100. mu.L of 0.1M lead nitrate solution was added to the mixed solution, stirred gently for 30 minutes, 0.5ml of newly prepared 0.01M sodium borohydride was added dropwise to the mixture, and the mixed solution was placed in a water bath and kept at 50 ℃ for 0.5 hour. The solution was centrifuged for 4 minutes at 8000 rpm, the supernatant removed and finally redispersed in 5ml of distilled water for further use.
The structure and the appearance of the gold lead sulfide core-shell nanorod are characterized in that:
as shown in FIG. 2, FIG. 2(a) and FIG. 2(b) are TEM images of gold lead sulfide core-shell nanorods, and the gold nanorods have an average degree of about 52.4nm, a diameter of about 20.3nm, and an average aspect ratio of about 2.58. FIG. 2(c) is a transmission electron microscope image of a single gold lead sulfide core-shell nanorod, and FIG. 2(d) is a high-resolution TEM image of the gold lead sulfide core-shell nanorod, and the distance between the lattice planes of the shell layers is 0.34nm calculated by Digital micrograph analysis, and corresponds to the [111] crystal plane of the PbS crystal; the lattice spacing in the nano-rod is 0.24nm, and is matched with the lattice plane spacing of a gold crystal [111], and the inner attached figure is an electron diffraction spot after fast Fourier transform. The data of a transmission electron microscope image show that the gold lead sulfide core-shell nanorod with good crystallinity and stable and uniform core-shell structure is prepared by the three-step cation replacement method.
Preparation of photodetector based on gold lead sulfide core-shell nanorod
And spreading the nanorods on a back gate field effect phototransistor substrate by adopting a liquid phase spin coating technology, annealing and drying at low temperature, and packaging an external circuit. The method comprises the following specific steps:
step S3, preparation of gold-lead sulfide core-shell nanorod structured back-grid field effect phototransistor
As shown in FIG. 3(a), silicon 4 and the SiO thereon are n-doped23 respectively serving as a gate electrode and a gate dielectric layer, and then SiO2The layer thermal evaporation Au electrode is used as an Au source electrode 1 and an Au drain electrode 2, and the middle part is a spin-coated gold lead sulfide nuclear shell nanorod structure 5. SiO 22A gate dielectric layer 3 is arranged on the n-doped Si gate electrode 4 on SiO2An Au source electrode 1 and an Au drain electrode 2 are arranged on a gate dielectric layer 3 to prepare a back gate substrate, the gold-lead sulfide core-shell nanorod solution is dripped on the back gate substrate and is spin-coated on the back gate substrate, then vacuum drying is carried out, a hexadecyl trimethyl ammonium bromide methanol solution is dripped on a rotating film, and then vacuum drying is carried out after the film is cleaned by methanol; preferably, the prepared Au-PbS NRs is spin-coated on the back gate substrate at 2500 rpm for 15 seconds twice. The spin-coated devices were vacuum dried for 30 minutes.
Step S4, external circuit and package
And respectively leading out the Au source 1, the Au drain 2 and the n-doped Si gate electrode 4 on the back gate substrate by using wires, fixing the wires by using silver colloid, and then packaging the wires by using an insulating material to obtain the gold-lead sulfide core-shell nanorod photodetector.
FIG. 3b is a cross-sectional SEM image of an Au-PbS NRs field effect transistor with a relatively uniform, spin-coated Au-PbS NRs layer having an average thickness of 267 nm.
Fig. 4a is a graph of the relationship between the responsivity and the optical power density of an Au-PbS NRs photodetector excited by a power tunable 808nm laser. When the optical power isIs 5mW cm-2,VG=VSDThe responsivity of the device reaches a maximum at-4V, 18.5A W-1(ii) a When V isG=VSDWhen 4V, 6.1AW is achieved-1. FIG. 4b relationship between responsivity and wavelength of the device, VG=VSDTwo obvious response peak positions appear at 580nm and 940nm in a spectrogram, and the two obvious response peak positions are caused by the optical absorption phase of AuPbS NRs, so that the responsivity of the device is high in the two wave bands, and the fact that lead sulfide generates more photo-generated carriers under the excitation of the wave length is proved, and further the photocurrent is improved.
FIG. 5a shows the detectivity of AuPbS NRs photodetector under the excitation of 808nm wavelength laser with different optical power densities, when the optical power is 5mW cm-2,VG=VSDThe detectivity of the device reaches a maximum at-4V, 1.221011 Jones; when V isG=VSDWhen 4V, 4.011010Jones is reached. Fig. 5b is a plot of detectivity as a function of wavelength, and similarly the detectivity of the device reaches a maximum at a wavelength of 940 nm.
FIG. 6 is a graph of the quantum efficiency EQE enhancement ratio, FIG. 6a external quantum efficiency, V, of an Au-PbS NRs photodetector excited at 808nm for different optical power densitiesG=VSDFig. 6b quantum efficiency spectrum of Au-PbS NRs photodetector at-4V. It can be seen that the EQE of Au-PbS NRs photodetectors is highest around 940nm, which is an improvement of about 3.7 times over PbS photodetectors. The improvement of EQE efficiency means that the semiconductor generates a larger number of photogenerated carriers, which form a photocurrent when driven by an external circuit. In the metal semiconductor core-shell nano structure, a local electromagnetic field enhanced by local surface plasmon resonance such as a gold nanorod can exist far away from an exciter band, and the enhanced local field can promote light absorption of a semiconductor. The mutual coupling between the metal plasma excited element and the semiconductor exciton generates more photon-generated carriers.
The invention optimizes the experimental operation process by a cation replacement method to prepare the gold lead sulfide core-shell nanorod with good crystallinity and stable core-shell structure, and discovers that the local area of the nanorod is increased along with the increase of the shell dielectric constant through the light absorption spectrumThe surface plasmon resonance peak position is shifted from visible light red to near-infrared band, based on the excellent structure, the gold-lead sulfide core-shell nanorod photodetector is manufactured by a liquid-phase glue-homogenizing spin-coating technology, the source-drain voltage and the grid voltage are-4V, and the power density is 5mW cm-2When the 808nm laser is excited, the responsivity reaches 18.5AW-1The detectivity reaches 1.22 multiplied by 1011Jones, quantum efficiency up to 2844%, the photo detector of the gold-lead sulfide core-shell nanorod and the PbS photo detector are subjected to a contrast experiment to obtain the lead sulfide photo detector with the responsivity of 4.9AW-1The detectivity reaches 4.8 multiplied by 1010Jones, quantum efficiency is 767%, the responsivity of the back-grid field effect phototransistor with the gold-lead sulfide core-shell nanorod structure is 3.8 times, the detectivity is 2.5 times, and the quantum efficiency is remarkably improved by 3.7 times compared with the existing lead sulfide photodetector.
It should be understood that although the present description has been described in terms of various embodiments, not every embodiment contains independent technical solutions, and this description is only for clarity, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can be combined appropriately to form other embodiments that can be understood by those skilled in the art.
The -series detailed description set forth above is merely a specific description of possible embodiments of the invention and is not intended to limit the scope of the invention, which is intended to include within its scope all equivalent embodiments or modifications that do not depart from the technical spirit of the invention.

Claims (10)

  1. The preparation method of the gold-lead sulfide core-shell nanorod photodetectors is characterized by comprising the following steps of:
    step S1, preparation of gold nanorods
    Preparing a seed solution: the chloroauric acid tetrahydrate HAuCl4·4H2Adding O into cetyl trimethyl ammonium bromide CTAB solution, adding sodium borohydride solution into the solution, standing to prepare light brown goldSeed liquid;
    preparing a growth solution: adding silver nitrate solution into cetyl trimethyl ammonium bromide CTAB solution, stirring, adding chloroauric acid tetrahydrate HAuCl4·4H2Preparing a growth solution from an O solution, a hydrochloric acid solution and an ascorbic acid solution;
    preparing a gold nanorod solution: adding the gold seed solution into the growth solution, stirring and standing;
    step S2, preparation of gold-lead sulfide core-shell nano rod
    Mixing a gold nanorod solution and a glycine solution, adding a sodium hydroxide solution and a silver nitrate solution, stirring, standing in a water bath, keeping the temperature, coating layers of silver nanoshells on the periphery of the gold nanorod, adding excess sulfur powder, keeping the temperature, converting the silver nanoshells into silver sulfide shells through a vulcanization reaction, centrifuging to remove the excess sulfur powder, adding a lead nitrate solution, stirring, adding sodium borohydride, keeping the temperature in the water bath, forming a lead sulfide nanoshell through a cation exchange reaction, and re-dispersing precipitates obtained after the solution is centrifuged to remove a supernatant in distilled water to obtain a gold-lead sulfide core-shell nanorod solution;
    step S3, preparation of gold-lead sulfide core-shell nanorod structured back-grid field effect phototransistor
    SiO2A gate dielectric layer (3) is arranged on the n-doped Si gate electrode (4) on the SiO2An Au source electrode (1) and an Au drain electrode (2) are arranged on a gate dielectric layer (3) to prepare a back gate substrate, the gold-lead sulfide core-shell nanorod solution is dripped on the back gate substrate and is spin-coated on the back gate substrate, then vacuum drying is carried out, a hexadecyl trimethyl ammonium bromide methanol solution is dripped on a rotating film, and then vacuum drying is carried out after the film is cleaned by methanol;
    step S4, external circuit and package
    And respectively leading out the Au source (1), the Au drain (2) and the n-doped Si gate electrode (4) on the back gate substrate by using wires, fixing the Au source, the Au drain and the n-doped Si gate electrode by using silver colloid, and then packaging the Au source, the Au drain and the n-doped Si gate electrode by using an insulating material to obtain the gold-lead sulfide core-shell nanorod photodetector.
  2. 2. According to the rightThe preparation method of the gold-lead sulfide core-shell nanorod photodetector of claim 1, wherein in the step S1 of preparing the seed solution: 10mL of 0.5mM chloroauric acid tetrahydrate HAuCl4·4H2The O solution was added to 10mL of a 0.2M cetyltrimethylammonium bromide CTAB solution, stirred uniformly, and a newly prepared 1.2mL of a 0.01M ice-cold sodium borohydride solution was added thereto, and the solution was changed to light brown, stirred, and then allowed to stand at room temperature for 30 minutes.
  3. 3. The method for preparing a gold-lead sulfide core-shell nanorod photodetector of claim 1, wherein in the step S1, the growth solution is prepared by: first, 12mL of 0.1M silver nitrate solution was added to 6mL of 0.2M cetyltrimethylammonium bromide CTAB solution, and after stirring, 1.2mL of 5mM chloroauric acid tetrahydrate HAuCl was added4·4H2And mixing the O solution uniformly.
  4. 4. The method for preparing the gold-lead sulfide core-shell nanorod photodetector of claim 1, wherein the step S2 specifically comprises:
    mixing 5mL of gold nanorod solution with glycine solution, adding sodium hydroxide solution and silver nitrate solution, stirring, standing in a water bath at 30-35 ℃ for heat preservation for 10 hours, adding excessive sulfur powder, continuing to preserve heat for 10 hours, centrifuging to remove excessive sulfur powder, adding lead nitrate solution, stirring for 30 minutes, adding sodium borohydride, placing in a water bath at 45-55 ℃ for heat preservation for 0.5 hour, and re-dispersing precipitate obtained after centrifuging the solution to remove supernatant in distilled water to obtain the gold-lead sulfide core-shell nanorod solution.
  5. 5. The method for preparing a gold-lead sulfide core-shell nanorod photodetector of claim 1, wherein the sodium borohydride in the step S2 is a newly prepared ice-cold sodium borohydride solution and is added dropwise.
  6. 6. The method for preparing a gold-lead sulfide core-shell nanorod photodetector of claim 4, wherein the centrifugation speed for centrifuging to remove the excess sulfur powder in the step S2 is less than 1500 revolutions per minute.
  7. 7. The method for preparing a gold-lead sulfide core-shell nanorod photodetector as claimed in claim 4, wherein the solution centrifugation operation time in the step S2 is 4-5 minutes, and the rotation speed is 7600-8200 rpm.
  8. 8. The method for preparing a gold-lead sulfide core-shell nanorod photodetector as claimed in claim 1, wherein the spin coating in step S3 is performed at a rotation speed of 2200-.
  9. 9. The method for preparing a gold-lead sulfide core-shell nanorod photodetector of claim 1, wherein the insulating material in the step S4 is polydimethylsiloxane or polystyrene, and the conducting wire is a silver wire or a copper wire.
  10. 10, kinds of gold-lead sulfide core-shell nanorod photodetectors, characterized in that, the gold-lead sulfide core-shell nanorod photodetectors are prepared by the method for preparing gold-lead sulfide core-shell nanorod photodetectors according to any of claims 1-9.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111451520A (en) * 2020-03-12 2020-07-28 武汉工程大学 Preparation method of nanogold

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100046072A1 (en) * 2008-08-20 2010-02-25 Fujifilm Corporation Composite metal nanorod, composite metal nanorod-containing composition, and polarization material
CN105149612A (en) * 2015-09-21 2015-12-16 陕西师范大学 Method for preparing SiO2-coated Au@Ag core-shell nanorod
CN106932376A (en) * 2017-03-02 2017-07-07 江苏大学 A kind of mycotoxin super sensitivity detection method of the gold silver core-shell nanometer rod based on DTNB marks
CN106935708A (en) * 2017-04-26 2017-07-07 江西师范大学 Organic solar cell broadband light absorption layer film based on peanut-shaped gold-copper sulfide core-shell nanorods and preparation method thereof
CN108273057A (en) * 2018-02-02 2018-07-13 中国科学院长春应用化学研究所 A kind of preparation method and applications of gold-copper sulfide nano material of hollow nucleocapsid
CN108672716A (en) * 2018-05-23 2018-10-19 厦门斯贝克科技有限责任公司 A kind of preparation method of silver gold-covered nano stick
CN109596822A (en) * 2018-11-23 2019-04-09 上海交通大学 A kind of gold core silver shell nanocomposite and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100046072A1 (en) * 2008-08-20 2010-02-25 Fujifilm Corporation Composite metal nanorod, composite metal nanorod-containing composition, and polarization material
CN105149612A (en) * 2015-09-21 2015-12-16 陕西师范大学 Method for preparing SiO2-coated Au@Ag core-shell nanorod
CN106932376A (en) * 2017-03-02 2017-07-07 江苏大学 A kind of mycotoxin super sensitivity detection method of the gold silver core-shell nanometer rod based on DTNB marks
CN106935708A (en) * 2017-04-26 2017-07-07 江西师范大学 Organic solar cell broadband light absorption layer film based on peanut-shaped gold-copper sulfide core-shell nanorods and preparation method thereof
CN108273057A (en) * 2018-02-02 2018-07-13 中国科学院长春应用化学研究所 A kind of preparation method and applications of gold-copper sulfide nano material of hollow nucleocapsid
CN108672716A (en) * 2018-05-23 2018-10-19 厦门斯贝克科技有限责任公司 A kind of preparation method of silver gold-covered nano stick
CN109596822A (en) * 2018-11-23 2019-04-09 上海交通大学 A kind of gold core silver shell nanocomposite and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
XINHONG ZHAO ET AL.: "Au-PbS core-shell nanorods for plasmon-enhanced near-infrared photodetection", 《J MATER SCI》 *
张艳萍 等: "核壳型Au-Ag纳米材料的合成及其光学性能表征", 《广东化工》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111451520A (en) * 2020-03-12 2020-07-28 武汉工程大学 Preparation method of nanogold

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