CN110739335A - kinds of display panel and manufacturing method thereof - Google Patents
kinds of display panel and manufacturing method thereof Download PDFInfo
- Publication number
- CN110739335A CN110739335A CN201911008726.9A CN201911008726A CN110739335A CN 110739335 A CN110739335 A CN 110739335A CN 201911008726 A CN201911008726 A CN 201911008726A CN 110739335 A CN110739335 A CN 110739335A
- Authority
- CN
- China
- Prior art keywords
- conductive film
- transparent conductive
- electrode
- layer
- display area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention provides display panels and a manufacturing method of the display panels, wherein the display panels comprise an array substrate, a luminous body and a non-display area, the array substrate comprises a substrate, a source electrode, a grid electrode and a drain electrode, the source electrode, the grid electrode and the drain electrode are arranged on the substrate, the luminous body is arranged on the array substrate, the luminous body comprises a top electrode and a bottom electrode, the bottom electrode is electrically connected with the drain electrode or the source electrode, the substrate is provided with the display area and the non-display area, the top electrode comprises a transparent conductive film and a second transparent conductive film which are connected, the transparent conductive film completely or partially covers the display area, the second transparent conductive film is arranged on the transparent conductive film and at least partially covers the transparent conductive film, and the second transparent conductive film is electrically connected with a circuit connecting wire of the non-display area.
Description
Technical Field
The invention relates to the field of displays, in particular to display panels and a manufacturing method of the display panels.
Background
Since quantum dot light emitting diode (QLED) has advantages of high color gamut, self-luminescence, fast response, viewing angle , high brightness, lightness and thinness, etc., it is that is the main direction of current display device research, layers of transparent conductive thin film (ITO) are arranged on the top electrode of QLED to lead out the electric signal on the electronic transmission layer, and the voltage change of the electric signal transmission influenced by the conductivity of the transparent conductive thin film itself causes voltage drop phenomenon.
Disclosure of Invention
The invention mainly aims to provide display panels, and aims to solve the problem that a voltage drop phenomenon cannot be improved because an electron transport layer formed by whole deposition cannot reserve a through hole for connecting an auxiliary electrode, and the auxiliary electrode cannot be connected to the upper end of a top electrode.
In order to achieve the above purpose, the invention provides display panels, which include an array substrate, an array substrate including a substrate, a source, a gate and a drain, the source, the gate and the drain being disposed on the substrate, a light emitter disposed on the array substrate, the light emitter including a top electrode and a bottom electrode, the bottom electrode being electrically connected to the drain or the source, the substrate having a display region and a non-display region, the top electrode including a transparent conductive film and a second transparent conductive film connected thereto, the transparent conductive film entirely or partially covering the display region, the second transparent conductive film being disposed on the transparent conductive film and at least partially covering the transparent conductive film, and the second transparent conductive film being electrically connected to a circuit connection line of the non-display region.
Optionally, the th transparent conductive film abuts the second transparent conductive film.
Optionally, the th transparent conductive film includes or more of silver nanowires, conductive carbon nanotubes, and graphene, and the second transparent conductive film is ITO or IZO.
Optionally, the light emitting body further includes a light emitting layer, an insulating layer, and an electron transport layer, where the light emitting layer, the insulating layer, and the electron transport layer are all located between the bottom electrode and the top electrode, and the light emitting layer, the insulating layer, and the electron transport layer are arranged layer by layer from the bottom electrode to the top electrode.
Optionally, the insulating layer is made of a transparent insulating metal oxide.
Optionally, an electrode overlapping portion is arranged on the non-display area, the edge of the second transparent conductive film covers the electrode overlapping portion, a via hole is formed in the electrode overlapping portion, and the second transparent conductive film is electrically connected with the array substrate and the external circuit through the via hole.
Optionally, a retaining wall is arranged at a junction of the display area and the non-display area on the substrate, and the retaining wall is located at the edge of the display area and surrounds the display area.
Optionally, the second transparent conductive film covers the th transparent conductive film, the retaining wall and the electrode overlapping region.
The invention also provides a manufacturing method of the display panels, which comprises the following steps:
arranging a source electrode, a grid electrode and a drain electrode on a substrate to form an array substrate, wherein the substrate is provided with a display area and a non-display area;
forming a luminous body on the array substrate, wherein the luminous body comprises a top electrode and a bottom electrode, the bottom electrode is electrically connected with the drain electrode or the source electrode, the top electrode consists of an th transparent conductive film and a second transparent conductive film, the th transparent conductive film completely or partially covers the display area, the second transparent conductive film is arranged on the th transparent conductive film and at least partially covers the th transparent conductive film, and the second transparent conductive film is electrically connected with a circuit connecting line of the non-display area.
Optionally, the step of forming the light emitter on the array substrate includes:
printing and forming a light emitting layer on the array substrate at a position corresponding to the display area;
depositing transparent and insulating metal oxide on the whole surface of the luminous layer to form an insulating layer;
coating an electron transmission layer on the whole surface of the insulating layer by adopting a slit coating process;
forming an th transparent conductive film by overall deposition on the electron transport layer;
and sputtering and depositing a second transparent conductive film on the th transparent conductive film.
The technical scheme of the invention is that the array substrate is arranged on the substrate and at least covers the display area, the array substrate is provided with the luminous body, the luminous body comprises a top electrode and a bottom electrode, the bottom electrode is electrically connected with the drain electrode or the source electrode of the array substrate, the top electrode consists of an th transparent conductive film and a second transparent conductive film, the second transparent conductive film is arranged on a th transparent conductive film and covers a th transparent conductive film, the second transparent conductive film is electrically connected with a circuit connecting wire of the non-display area, and the th transparent conductive film transmits an electric signal from the second transparent conductive film to the electronic transmission layer so as to reduce the voltage drop of the second transparent conductive film to the electric signal.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of a display panel according to the invention;
FIG. 2 is a diagram illustrating an internal structure of a display panel according to the present invention;
FIG. 3 is a schematic flow chart illustrating a method for fabricating a display panel according to the present invention;
fig. 4 is a schematic flow chart of a further step of the manufacturing method of the display panel of the present invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | |
40 | Electron transport layer |
| 11 | Electrode lap |
50 | |
| 20 | Luminous layer (Quantum dot light-emitting diode) | 51 | th transparent |
| 21 | |
52 | Second transparent conductive film |
| 22 | |
60 | Retaining |
| 23 | Quantum dot |
80 | |
| 30 | Insulating layer |
The objects, features, and advantages of the present invention are further described in with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only partial embodiments of the present invention, rather than all embodiments.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. at a certain posture (as shown in the figure), and if the certain posture is changed, the directional indicator is changed accordingly.
Thus, the features defined as "", "second" may or may not include at least of the indicated features.
As shown in fig. 1 and fig. 2, to achieve the above object, the present invention provides display panels, the display panel includes an array substrate 10, the array substrate 10 includes a substrate (not shown), a source (not shown), a gate (not shown), and a drain (not shown), the source, the gate, and the drain are disposed on the substrate, a light emitter is disposed on the array substrate 10, the light emitter includes a top electrode 50 and a bottom electrode 80, the bottom electrode 80 is electrically connected to the drain or the source, the substrate has a display region and a non-display region, the top electrode 50 includes a transparent conductive film 51 and a second transparent conductive film 52 connected thereto, the transparent conductive film 51 covers the display region wholly or partially, the second transparent conductive film 52 is disposed on the transparent conductive film 51 and at least partially covers the transparent conductive film 51, and the second transparent conductive film 52 is electrically connected to a circuit connection line of the non-display region.
In this embodiment, the substrate is divided into a display area and a non-display area, the non-display area is used for arranging the circuit connection lines, and the substrate may be a rigid substrate, such as glass, or a flexible substrate, such as Polyimide (PI). The substrate is sequentially provided with a grid electrode, a grid electrode insulating layer, an intrinsic amorphous silicon layer, an amorphous silicon layer, a source electrode, a drain electrode and an insulating protective layer to form an array substrate 10. The display area is an area on the display panel where an image can be displayed, and the non-display area does not display an image. The light emitter includes a top electrode 50 and a bottom electrode 80, the bottom electrode 80 is electrically connected to a source or a drain, when a voltage is applied to a gate, a back channel hole current is formed in a back channel in the array substrate 10, the source or the drain is electrically connected to the bottom electrode 80 (anode), holes are introduced into the bottom electrode 80 from the source or the drain, electrons are injected from the top electrode 50 (cathode), and the electrons meet the holes to emit light compositely in a radiation transition .
The top electrode 50 is composed of a th transparent conductive film 51 and a second transparent conductive film 52, the th transparent conductive film 51 may partially or completely cover the display region to transmit electrons to the electron transport layer 40, the second transparent conductive film 52 is disposed on the th transparent conductive film 51 and partially or completely cover the th transparent conductive film 51, wherein the second transparent conductive film 52 always completely covers the display region, and the edge of the second transparent conductive film 52 extends out of the display region and electrically connects with the connection line on the non-display region to ensure the reliability of signal transmission, and the th transparent conductive film 51 and the second transparent conductive film 52 may abut against each other, in an alternative embodiment, the portion where the th transparent conductive film 51 and the second transparent conductive film 52 abut against each other completely covers the display region, the electrical signal from the top electrode may be transmitted to the th transparent conductive film 51 through the second transparent conductive film 52, since the th transparent conductive film 51 and the second transparent conductive film 52 both have conductivity, and thus the electrical signal may be transmitted at any position where they abut against each other, thereby reducing the electrical signal transmission effect of the second transparent conductive film 51 and reducing the electrical signal transmission cost of the second transparent conductive film 52, and facilitating the secondary transparent conductive film 52 to be disposed in the process of the second transparent conductive film 52, thereby reducing the secondary transparent conductive film 52, which the secondary transparent conductive film 52, which may be disposed to reduce the cost of the secondary transparent conductive film 52, and reduce the electrical signal transmission of the secondary light emitter.
, the th transparent conductive film 51 includes or more of silver nanowires, conductive carbon nanotubes, and graphene, and the second transparent conductive film 52 is ITO (indium tin oxide) or IZO (indium zinc oxide).
The th transparent conductive film 51 is made of or more of silver nanowires, conductive carbon nanotubes and graphene, and has high conductivity so as to reduce the voltage drop of the ITO or IZO second transparent conductive film 52 to electrical signals, wherein ITO is indium tin oxide and IZO is indium zinc oxide.
Specifically, the light emitting body further includes a light emitting layer 20, an insulating layer 30 and an electron transport layer 40, wherein the light emitting layer 20, the insulating layer 30 and the electron transport layer 40 are all located between the bottom electrode 80 and the top electrode 50, and the light emitting layer 20, the insulating layer 30 and the electron transport layer 40 are arranged layer by layer from the bottom electrode 80 to the top electrode 50.
In this embodiment, the bottom electrode 80 is disposed on the surface of the light-emitting layer 20 facing away from the insulating layer 30, the bottom electrode 80 is electrically connected to the drain electrode, and the light-emitting layer 20, the insulating layer 30, and the electron transport layer 40 are disposed layer by layer from the array substrate 10 to the top electrode 50.
The array substrate 10 has a plurality of pixel electrodes (not shown), each pixel electrode is connected to a driving circuit, the driving circuit is located in the non-display area, and the driving circuit controls the on/off state of the pixel electrode. The aperture ratio of the pixel electrode is determined by a pixel defining layer (not shown in the figure), a hole injection layer 21, a hole transport layer 22 and a quantum dot light emitting layer 23 are sequentially arranged in a groove surrounded by the pixel electrode and the pixel defining layer, and the pixel electrode, the pixel defining layer, the hole injection layer 21, the hole transport layer 22 and the quantum dot light emitting layer 23 jointly form a quantum dot light emitting diode, namely a light emitting layer 20. The hole injection layer 21 is connected with the bottom electrode 80, and holes transmitted from the drain electrode by the bottom electrode 80 enter the hole injection layer 21 and then enter the hole transport layer 22; electrons injected from the cathode enter the quantum dot light emitting layer 23 through the electron transport layer 40, and holes from the bottom electrode 80 and electrons from the top electrode 50 meet at the quantum dot light emitting layer 23 to compositely emit light in the form of an emission jump .
As shown in fig. 2, the quantum dot light emitting layers 23 are set to different colors, specifically including a red quantum dot light emitting layer, a green quantum dot light emitting layer, and a blue quantum dot light emitting layer, and the quantum dot light emitting layers 23 of the three colors are set at intervals, that is, the quantum dot light emitting layers 23 of the same color are not adjacent to each other.
In a specific implementation, the hole injection layer 21, the hole transport layer 22 and the quantum dot light emitting layer 23 do not interfere with the pixel defining layer, so as to prevent a color mixing phenomenon from occurring and avoid affecting the imaging quality of the display panel.
In the embodiment, insulating layer 30 is composed of a transparent insulating metal oxide composed of Al2O3(aluminum oxide), HfO2(hafnium oxide), Y2O3(Yttrium oxide) and La2O3(lanthanum oxide), HfSiO4(tetrafluorosilane) and ZrSiO4(zirconium tetrachloride crystals), Mg or more of O (magnesium oxide).
The insulating layer 30 is located between the quantum dot light emitting layer 23 and the electron transport layer 40, and isolates the quantum dot light emitting layer 23 from the electron transport layer 40, so that electrons from the top electrode 50 are prevented from being captured by a hole of the quantum dot light emitting layer 23 in the electron transport layer 40, the purpose of controlling the balanced injection of the electrons and the hole is achieved, and the imaging quality of the display panel is ensured. Al (Al)2O3、HfO2、Y2O3、La2O3、HfSiO4、ZrSiO4、MgAnd O is transparent and has good insulating property, and can transmit light rays excited by the quantum dot light-emitting layer 23. In this embodiment, the insulating layer 30 is made of Al2O3、HfO2、Y2O3、La2O3、HfSiO4、ZrSiO4、Mg or more O, the thickness is 0.5nm-10nm, the film layer of the insulating layer 30 is complete and compact and uniform (i.e. no through hole is formed on the film layer), the band gap of the insulating layer 30 is larger than 5.0eV, and electrons transmitted on the electron transmission layer 40 are effectively blocked to be captured by the holes on the quantum dot light emitting layer 23.
As kinds of implementationFor example, the electron transport layer 40 is ZnO and/or TiO2And forming an n-type inorganic semiconductor.
The electron transport layer 40 is an electron transport functional layer of the quantum dot light emitting diode (i.e. the light emitting layer 20) for transporting electrons, and the electron transport layer 40 is formed by ZnO (zinc oxide) and/or TiO2(titanium dioxide) is n-type inorganic semiconductors it is understood that the electron transport layer 40 is not limited to the above-described structure, e.g., P-type semiconductor, and may be embodied in combination with the structure of the array substrate 10.
Optionally, an electrode overlapping portion 11 is disposed on the non-display region, an edge of the second transparent conductive film 52 covers the electrode overlapping portion 11, a via hole (not shown) is disposed on the electrode overlapping portion 11, and the second transparent conductive film 52 is electrically connected to the array substrate 10 and the external circuit through the via hole.
In embodiments, the non-display region is provided with an electrode pad 11, the electrode pad 11 is provided with a via hole for passing a connection wire, the main body of the second transparent conductive film 52 covers the th transparent conductive film 51, the edge region covers the electrode pad 11, and the array substrate 10 and the external circuit are connected to the second transparent conductive film 52 through the via hole.
A retaining wall 60 is arranged at the junction of the display area and the non-display area on the substrate, and the retaining wall 60 is positioned at the edge of the display area and surrounds the display area.
In order to prevent the insulating metal oxide from entering the non-display region beyond the edge of the display region when the insulating layer 30 is processed and to prevent the second transparent conductive film 52 on the non-display region from being affected by the connection with the array substrate 10 and the external circuit, a retaining wall 60 is disposed at the boundary between the display region and the non-display region, and the retaining wall 60 surrounds the display region. Meanwhile, the blocking wall 60 may also prevent the electron transport layer 40 from exceeding the display region.
layers of pixel defining layers are covered on the electrode overlapping area 11, the pixel defining layers have lyophobicity, and the silver nanowires, the conductive carbon nanotubes and the graphene are deposited on the whole surface of the liquid to form a th transparent conductive film 51, the lyophobicity of the pixel defining layers causes that the th transparent conductive film 51 cannot be formed on the electrode overlapping area 11, so that a second transparent conductive film 52 is required to be formed on the electrode overlapping area 11 (the second transparent conductive film 52 can be formed by sputtering, which is different from the process for forming the th transparent conductive film 51 by liquid deposition, and the lyophobicity of the pixel defining layers does not influence the formation of the second transparent conductive film 52 on the electrode overlapping area 11) so that the top electrode 50 is connected with the array substrate 10 and the external circuit.
In the present embodiment, the retaining wall 60 is made of a light-proof material.
Please , referring to fig. 1 to 4, the present invention further provides a manufacturing method of display panels, as shown in fig. 3, the manufacturing method of the display panel includes the following steps:
s10: arranging a source electrode, a grid electrode and a drain electrode on a substrate to form an array substrate 10, wherein the substrate is provided with a display area and a non-display area; the array substrate 10, the array substrate 10 is set up on the substrate and covers the display area at least, the array substrate 10 includes source, grid and drain-source resistance;
s20, forming a luminous body on the array substrate 10, wherein the luminous body comprises a top electrode 50 and a bottom electrode 80, the bottom electrode 80 is electrically connected with the drain electrode or the source electrode, the top electrode 50 is composed of a th transparent conductive film 51 and a second transparent conductive film 52, the th transparent conductive film 51 completely or partially covers the display area, the second transparent conductive film 52 is arranged on the th transparent conductive film 51 and at least partially covers the th transparent conductive film 51, and the second transparent conductive film 52 is electrically connected with the circuit connecting line of the non-display area.
In this embodiment, a gate electrode, a gate insulating layer, an intrinsic amorphous silicon layer, an amorphous silicon layer, source and drain electrodes, and an insulating protective layer are sequentially disposed on a substrate to form an array substrate 10. The substrate is divided into a display area and a non-display area, the pixel electrode on the array substrate 10 is located in the display area and electrically connected with the driving circuit, the driving circuit controls the on-off state of the pixel electrode, the pixel defining layer is located in the display area and the non-display area, and the pixel defining layer covers the electrode overlapping area 11 on the non-display area.
Forming a light emitter on the array substrate 10, wherein the bottom electrode 80 of the light emitter is formed first, the top electrode 50 is formed last, specifically, the bottom electrode includes a transparent conductive film 51 and a second transparent conductive film 52, the transparent conductive film 51 may partially or completely cover the display region to transmit electrons to the electron transport layer 40, wherein the second transparent conductive film 52 always completely covers the display region, and the edge of the second transparent conductive film 52 extends out of the connection line between the display region and the non-display region to electrically connect the display region and ensure the reliability of signal transmission, the second transparent conductive film 52 is disposed on the a transparent conductive film 51 and covers the transparent conductive film 51, the a transparent conductive film 51 and the second transparent conductive film 52 may abut against each other, in an alternative embodiment, the portion where the a transparent conductive film 51 and the second transparent conductive film 52 abut against each other completely covers the display region, the electrical signal emitted from the top electrode may be transmitted to the a transparent conductive film 1 through the second transparent conductive film 52, since the a transparent conductive film 51 and the second transparent conductive film 52 both have an abutting portion, the transparent conductive film 52, the conductive film 52 may be disposed in place of the second transparent conductive film 52, thereby reducing the electrical signal transmission cost of the second transparent conductive film 52, and reducing the electrical signal transmission effect of the second transparent conductive film 52, the second conductive film 52 may be easily achieved by a simple process of the transparent conductive film 52, thereby reducing the second conductive film 52, and reducing the conductive film 52, and reducing the cost of the conductive film 52, and reducing the conductive film 52.
In another embodiment, as shown in fig. 2, when the size of the display panel is small, the voltage drop caused by the second transparent conductive film 52 to the electrical signal is not significant, in which case, the th transparent conductive film 51 can be omitted and the second transparent conductive film 52 can be directly disposed on the electron transport layer 40.
In a specific implementation, the bottom electrode 80 may be completed by a printing process.
, the step of forming the light emitter on the array substrate 10 includes:
s21: printing and forming a light emitting layer 20 on the array substrate 10 at a position corresponding to the display area;
s22: depositing a transparent and insulating metal oxide layer on the entire surface of the light emitting layer 20 to form an insulating layer 30;
s23: depositing an electron transport layer 40 on the entire surface of the insulating layer 30 by using a slit coating process;
s24, depositing the whole surface of the electron transport layer 40 to form a transparent conductive film 51;
s25, a second transparent conductive film 52 is formed on the transparent conductive film 51 by sputtering deposition.
The light emitting layer 20 specifically includes a hole injection layer 21, a hole transport layer 22 and a quantum dot light emitting layer 23, and the hole injection layer 21, the hole transport layer 22 and the quantum dot light emitting layer 23 are sequentially formed on the bottom electrode 80 by a printing process and are located in a groove surrounded by the pixel electrode and the pixel defining layer.
The barrier 60 is arranged at the junction of the display area and the non-display area, the barrier 60 surrounds the display area and is used for preventing the insulating layer 30 and the electron transmission layer 40 in the subsequent process from exceeding the display area, the insulating layer 30 can be formed by depositing the whole surface of the luminescent layer 20 through an atomic force deposition process (ALD) and is used for preventing electrons from the top electrode 50 from being captured by a cavity of the quantum dot luminescent layer 23 in the electron transmission layer 40, the whole surface deposition is formed by times of film layers of the insulating layer 30 in a mode of depositing, the surface is complete and has no through holes, compared with a printing process, a vacuum environment is not needed in a processing link of the atomic force deposition process, the process is simpler, the process is quicker, an inner edge accumulation phenomenon easily caused by the printing process can be avoided, the thickness of the formed film layers is uniform, and .
Since the insulating layer 30 is made of transparent insulating metal oxide and is lyophilic, the electron transport layer 40 can not be deposited on the insulating layer 30 corresponding to each pixel electrode by using a printing process, and the electron transport layer 40 is formed by depositing the whole surface of the insulating layer 30 by using a slit coating process and covers the insulating layer 30, so that the formed film layer has uniform thickness, the process is simpler, and the process is faster.
The th transparent conductive film 51 is formed by a slit coating process through full-surface deposition, the th transparent conductive film 51 is formed by or more of silver nanowires, conductive carbon nanotubes and graphene with high conductivity, so that the th transparent conductive film 51 has good conductivity and can replace an auxiliary electrode to reduce the voltage drop of the second transparent conductive film 52 to an electric signal, pixel defining layers are covered on the electrode overlapping area 11 and have lyophobicity, the silver nanowires, the conductive carbon nanotubes and the graphene are formed by liquid full-surface deposition to form the th transparent conductive film 51, and the lyophobicity of the pixel defining layers causes that the th transparent conductive film 51 cannot be formed in the electrode overlapping area 11, so that the second transparent conductive film 52 needs to be formed in the electrode overlapping area 11 to enable the top electrode 50 to be connected with the array substrate 10 and an external circuit, the second transparent conductive film 52 is a transparent conductive metal oxide, such as ITO or IZO, and the second transparent conductive film 52 is formed by an evaporation or physical sputtering deposition Process (PVD).
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1, display panel, characterized in that, the display panel includes:
the array substrate comprises a substrate, a source electrode, a grid electrode and a drain electrode, wherein the source electrode, the grid electrode and the drain electrode are arranged on the substrate, and the substrate is provided with a display area and a non-display area;
the light-emitting body is arranged on the array substrate and comprises a top electrode and a bottom electrode, and the bottom electrode is electrically connected with the drain electrode or the source electrode;
the top electrode comprises an th transparent conductive film and a second transparent conductive film which are connected, the th transparent conductive film completely or partially covers the display area, the second transparent conductive film is arranged on the th transparent conductive film and at least partially covers the th transparent conductive film, and the second transparent conductive film is electrically connected with the circuit connecting line of the non-display area.
2. The display panel of claim 1, wherein the th transparent conductive film abuts the second transparent conductive film.
3. The display panel of claim 1, wherein the th transparent conductive film comprises or more of silver nanowires, conductive carbon nanotubes and graphene, and the second transparent conductive film is ITO or IZO.
4. The display panel according to claim 1, wherein the light-emitting body further comprises a light-emitting layer, an insulating layer, and an electron transport layer, the light-emitting layer, the insulating layer, and the electron transport layer are disposed between the bottom electrode and the top electrode, and the light-emitting layer, the insulating layer, and the electron transport layer are disposed layer by layer from the bottom electrode to the top electrode.
5. The display panel according to claim 4, wherein the insulating layer is formed of a transparent and insulating metal oxide.
6. The display panel of claim 1, wherein an electrode overlapping portion is disposed on the non-display region, an edge of the second transparent conductive film covers the electrode overlapping portion, a via hole is disposed on the electrode overlapping portion, and the second transparent conductive film is electrically connected to the array substrate and the external circuit through the via hole.
7. The display panel according to claim 6, wherein a retaining wall is disposed at a boundary between the display region and the non-display region on the substrate, and the retaining wall is located at an edge of the display region and surrounds the display region.
8. The display panel according to claim 7, wherein the second transparent conductive film covers the th transparent conductive film, the dam, and the electrode landing area.
The manufacturing method of the 9, kinds of display panels is characterized by comprising the following steps:
arranging a source electrode, a grid electrode and a drain electrode on a substrate to form an array substrate, wherein the substrate is provided with a display area and a non-display area;
forming a luminous body on the array substrate, wherein the luminous body comprises a top electrode and a bottom electrode, the bottom electrode is electrically connected with the drain electrode or the source electrode, the top electrode consists of an th transparent conductive film and a second transparent conductive film, the th transparent conductive film completely or partially covers the display area, the second transparent conductive film is arranged on the th transparent conductive film and at least partially covers the th transparent conductive film, and the second transparent conductive film is electrically connected with a circuit connecting line of the non-display area.
10. The method of claim 9, wherein the step of forming the light emitter on the array substrate comprises:
printing and forming a light emitting layer on the array substrate at a position corresponding to the display area;
depositing transparent and insulating metal oxide on the whole surface of the luminous layer to form an insulating layer;
depositing an electron transmission layer on the whole surface of the insulating layer by adopting a slit coating process;
forming an th transparent conductive film by overall deposition on the electron transport layer;
and sputtering and depositing a second transparent conductive film on the th transparent conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911008726.9A CN110739335A (en) | 2019-10-21 | 2019-10-21 | kinds of display panel and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911008726.9A CN110739335A (en) | 2019-10-21 | 2019-10-21 | kinds of display panel and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110739335A true CN110739335A (en) | 2020-01-31 |
Family
ID=69270872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911008726.9A Pending CN110739335A (en) | 2019-10-21 | 2019-10-21 | kinds of display panel and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110739335A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114420862A (en) * | 2022-01-05 | 2022-04-29 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623644A (en) * | 2011-11-29 | 2012-08-01 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
| KR20130008754A (en) * | 2011-07-13 | 2013-01-23 | 엘지디스플레이 주식회사 | Organic light emitting display device and method for fabricating the same |
| CN103000816A (en) * | 2012-09-07 | 2013-03-27 | 天津工业大学 | Organic light emitting diode based on flexible carbon nanotube films |
| CN104953044A (en) * | 2015-05-06 | 2015-09-30 | 深圳市华星光电技术有限公司 | Flexible oled and manufacturing method thereof |
| CN105810711A (en) * | 2015-01-16 | 2016-07-27 | 三星显示有限公司 | Organic light emitting display device and method of manufacturing the same |
| CN107331685A (en) * | 2017-06-28 | 2017-11-07 | 上海天马微电子有限公司 | A kind of display panel and its manufacture method, display device |
| WO2018205587A1 (en) * | 2017-05-10 | 2018-11-15 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display device |
| CN109300959A (en) * | 2018-10-09 | 2019-02-01 | 合肥鑫晟光电科技有限公司 | Display panel and preparation method thereof, display device |
| CN109755405A (en) * | 2019-02-28 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of electron transfer layer and preparation method thereof, luminescent device and display device |
-
2019
- 2019-10-21 CN CN201911008726.9A patent/CN110739335A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130008754A (en) * | 2011-07-13 | 2013-01-23 | 엘지디스플레이 주식회사 | Organic light emitting display device and method for fabricating the same |
| CN102623644A (en) * | 2011-11-29 | 2012-08-01 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
| CN103000816A (en) * | 2012-09-07 | 2013-03-27 | 天津工业大学 | Organic light emitting diode based on flexible carbon nanotube films |
| CN105810711A (en) * | 2015-01-16 | 2016-07-27 | 三星显示有限公司 | Organic light emitting display device and method of manufacturing the same |
| CN104953044A (en) * | 2015-05-06 | 2015-09-30 | 深圳市华星光电技术有限公司 | Flexible oled and manufacturing method thereof |
| WO2018205587A1 (en) * | 2017-05-10 | 2018-11-15 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display device |
| CN107331685A (en) * | 2017-06-28 | 2017-11-07 | 上海天马微电子有限公司 | A kind of display panel and its manufacture method, display device |
| CN109300959A (en) * | 2018-10-09 | 2019-02-01 | 合肥鑫晟光电科技有限公司 | Display panel and preparation method thereof, display device |
| CN109755405A (en) * | 2019-02-28 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of electron transfer layer and preparation method thereof, luminescent device and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114420862A (en) * | 2022-01-05 | 2022-04-29 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
| CN114420862B (en) * | 2022-01-05 | 2024-02-23 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110085648B (en) | Array substrate, manufacturing method thereof, display panel and display device | |
| KR102611500B1 (en) | Organic light emitting display device and method for manufacturing the same | |
| KR102020805B1 (en) | Transparent organic light emitting display device and method for manufacturing the same | |
| KR102028505B1 (en) | Organic light-emtting diode display panel and method for fabricating the same | |
| TWI691070B (en) | Organic light-emitting display device and method of manufacturing the same | |
| US7492096B2 (en) | Flat panel display device capable of reducing or preventing a voltage drop and method of fabricating the same | |
| US10229959B2 (en) | Organic el display panel and method of manufacturing organic el display panel | |
| TWI514561B (en) | Amoled | |
| WO2021093687A1 (en) | Display substrate and preparation method therefor, and display apparatus | |
| EP3188243B1 (en) | Organic light emitting display device and method of fabricating the same | |
| CN110729328B (en) | Organic light emitting diode display panel and organic light emitting diode display device | |
| WO2021098610A1 (en) | Display substrate, method for manufacturing same, and display apparatus | |
| US11417722B2 (en) | Display device including a low resistance cathode wiring | |
| CN108598145B (en) | Organic light-emitting display panel and organic light-emitting display device | |
| JP4488557B2 (en) | EL display device | |
| CN209822646U (en) | Display panel and display device | |
| CN109860416B (en) | Pixel structure and OLED display panel with same | |
| KR20210000383A (en) | Eletroluminescence display device | |
| KR20100137272A (en) | Organic light emitting display device and method for fabricating the same | |
| JP5954162B2 (en) | Manufacturing method of display device | |
| CN110739335A (en) | kinds of display panel and manufacturing method thereof | |
| CN110993642A (en) | Display panel and preparation method thereof | |
| US20220102449A1 (en) | Organic light emitting display device | |
| KR20160060835A (en) | Organic Light Emitting Diode Display Device and Method of Fabricating the Same | |
| US11785808B2 (en) | Flexible display device and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |