CN110735126A - method for preparing tungsten carbide transition layer-silicon doped diamond composite coating on steel substrate - Google Patents
method for preparing tungsten carbide transition layer-silicon doped diamond composite coating on steel substrate Download PDFInfo
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/271—Diamond only using hot filaments
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/046—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being doped or not
Abstract
The invention discloses methods for preparing tungsten carbide transition layer-silicon doped diamond composite coating on steel basal body, which aims at low carbon steel and low alloy steel and the like as basal bodies, firstly, tungsten fluoride and methane are used as precursors, a Plasma Enhanced Chemical Vapor Deposition (PECVD) nanometer tungsten carbide coating is adopted, then a hot filament chemical vapor deposition method is adopted to deposit a nanocrystalline silicon doped diamond coating on the tungsten carbide coating to form a double-layer transition layer, and an intrinsic micrometer or nanometer diamond coating is deposited on the surface of the silicon doped diamond coating.
Description
Technical Field
The invention relates to a preparation method in the technical field of films, in particular to methods for preparing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate.
Background
The diamond film has excellent physical and chemical performance, high hardness, small friction coefficient, high heat conductivity, stable chemical property, excellent insulator, kinds of excellent semiconductor material after doping B, N, Si elements, etc. at present, CVD diamond technology has been used in , such as coated mold, cutter, wear resisting device, electrochemical anticorrosion anode for water treatment, etc.
The difference between the thermal expansion coefficient and lattice constant of diamond and substrate materials, the deposited diamond coating has certain internal stress, which causes the coating adhesive force to decrease and easily fall off, the application occasions of cutters, shafts and the like are particularly obvious, because the substrate temperature is very high when the CVD method deposits the diamond film, about 850 ℃, and the thermal expansion coefficient of the diamond is small, is just 1/3-1/4 of the substrate materials, and larger internal stress can be generated on the coating after cooling and shrinking, in addition, because elements such as Fe, Co and the like can catalyze the conversion of the diamond to graphite under high temperature, the diamond coating cannot be directly deposited on steel and iron alloy which are widely applied in the tool field, common diamond deposition substrates comprise hard alloy, ceramic and the like, and the tungsten carbide coating is often used on the surface of steel substrates to improve the hardness and wear resistance of the substrate surface, and the wear resistance of the tungsten carbide gradient composite coating and the preparation method thereof (109023354A) in the Chinese patent application, the wear-resistant tungsten carbide coating is prepared by adopting a flame spraying and tungsten carbide coating which is prepared by a high-supersonic speed tungsten carbide coating, wherein the tungsten carbide coating is used for improving the hardness of the tungsten carbide coating of WC 27-17-tungsten carbide, and the tungsten carbide coating which is prepared by adopting a high-tungsten carbide coating method for improving the tungsten carbide coating.
In addition, the deposition of diamond coatings directly on the surface of steel substrates coated with tungsten carbide coatings is problematic. Firstly, the sprayed tungsten carbide often contains elements such as Co, and the like, which can cause diamond graphitization and coating peeling. Secondly, insufficient surface hardness of tungsten carbide also results in a reduction in the excellent surface hardness of the surface diamond coating itself.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides methods for preparing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate, thereby greatly expanding the selection range of the substrate material and reducing the cost.
The technical purpose of the invention is realized by the following technical scheme:
A method for preparing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate, comprising the following operation steps:
s1, after a substrate is pretreated, layers of nanocrystalline tungsten carbide coatings are deposited by a plasma enhanced chemical vapor deposition method;
s2, depositing layers of silicon-doped diamond coatings on the surface of the nanocrystalline tungsten carbide coating by adopting a hot wire chemical vapor deposition method;
s3, continuously depositing layers of intrinsic diamond coatings on the surfaces of the silicon-doped diamond coatings by a hot wire chemical vapor deposition method;
the substrate is any kinds of low-carbon steel or low-alloy steel.
Compared with the prior art, the method provided by the invention solves the problem that the CVD diamond coating cannot be directly deposited due to the fact that the thermal expansion coefficient of the steel matrix is too large to be different from that of diamond, so that the steel matrix can be used for replacing conventional hard alloy to deposit the diamond coating, and the economic performance is obvious.
, in S2, the plasma enhanced chemical vapor deposition method deposits the nanocrystalline tungsten carbide coating, using tungsten fluoride, methane and hydrogen as raw material gases, wherein the tungsten fluoride gas flow is 6sccm, the methane flow is 160sccm, and the hydrogen flow is 200sccm, the technique of coating the transition layer on the steel substrate and then depositing the diamond coating can isolate the contact of Fe and the diamond coating, but the hardness of the steel substrate is too low, which affects the exertion of the excellent hardness of the diamond coating.
, in S2, the deposition conditions of the nano-crystalline tungsten carbide coating deposited by the chemical vapor deposition method are that the deposition pressure is 100-150 Pa, the radio frequency power is 80kW, the deposition time is 180min, and the substrate temperature is 800 ℃.
, the grain diameter of the tungsten carbide of the nanocrystalline tungsten carbide coating is 20-50 nm.
And , continuously depositing S2 and S3 by HFCVD method.
, when depositing the silicon doped diamond coating, the carbon source adopts acetone, and the carbon source is doped with tetraethoxysilane as silicon source, and the concentration is 1000-9000 ppm.
, when depositing the silicon doped diamond coating, the hydrogen flow is 2000sccm, the volume ratio of the mixed solution and the hydrogen is 1-2%, the reaction pressure is 1200Pa, the hot wire temperature is 2200 ℃, the substrate temperature is about 800 ℃, the bias current is 4A, the deposition time is 2h, and the diameter of the deposited silicon doped diamond crystal grain is 200nm-1 μm.
, depositing an intrinsic diamond coating on the surface of the silicon-doped diamond coating, wherein the carbon source is acetone, the hydrogen flow is 2000sccm, the volume ratio of acetone vapor to hydrogen is 1-2%, the reaction pressure is 1200-4500Pa, the hot wire temperature is 2200 ℃, the substrate temperature is about 800 ℃, the bias current is 4A, and the deposition time is 2-20 h.
In conclusion, the invention has the following beneficial effects:
1. the tungsten carbide transition layer-silicon doped diamond composite coating on the steel substrate prepared by the method can deposit the diamond coating on the steel substrate which cannot be adopted by the conventional CVD method;
2. the tungsten carbide transition layer-silicon doped diamond composite coating on the steel substrate prepared by the method has the advantages that the hardness of the substrate, the tungsten carbide coating, the silicon doped diamond coating and the intrinsic diamond coating is gradually increased, and the structure with gradually increased surface hardness can better exert the excellent hardness and wear resistance of the intrinsic diamond on the outermost layer. The deformation and the falling off of the coating caused by the excessively low hardness of the matrix are avoided;
3. the composite coating of the tungsten carbide transition layer-silicon doped diamond on the steel substrate prepared by the method is compact in combination with the nano-crystalline silicon doped diamond coating, so that the adhesive force of the whole diamond coating is improved;
4. the tungsten carbide transition layer-silicon doped diamond composite coating on the steel matrix prepared by the method adopts nano-scale grains, has more crystal boundaries, can reduce residual stress and is beneficial to preventing crack propagation. Therefore, the structure can effectively avoid the coating from cracking and falling off;
5. the tungsten carbide transition layer-silicon doped diamond composite coating on the steel substrate prepared by the method can be deposited simultaneously with the silicon doped diamond coating and the intrinsic diamond coating, the steps are simple and convenient, and the production cost is effectively reduced.
Drawings
FIG. 1 is a schematic illustration of a tungsten carbide transition layer-silicon doped diamond composite coating prepared on a steel substrate;
FIG. 2 is a surface topography of a tungsten carbide transition layer-silicon doped diamond composite coating prepared on a steel substrate;
FIG. 3 is a Raman spectroscopic examination of a tungsten carbide transition layer-silicon doped diamond composite coating prepared on a steel substrate;
in the figure, 1 is a substrate, 2 is a nano tungsten carbide coating, 3 is a silicon-doped diamond coating, and 4 is an intrinsic diamond coating.
Detailed Description
The present invention is further described in detail below with reference to the attached figures.
In which like parts are designated by like reference numerals. It should be noted that the terms "front," "back," "left," "right," "upper" and "lower" used in the following description refer to directions in the drawings, and the terms "bottom" and "top," "inner" and "outer" refer to directions toward and away from, respectively, the geometric center of a particular component.
EXAMPLE 1 method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a Steel substrate
A steel substrate having dimensions of phi 20mm x 5mm was selected.
S1, soaking a substrate 1 in an acetone solution, ultrasonically cleaning for 15 minutes, taking out and drying, placing the substrate on a workbench of a PECVD device, starting to deposit a tungsten carbide coating 2, vacuumizing a reaction cavity, and introducing mixed gas of methane, tungsten fluoride and hydrogen. The tungsten fluoride gas flow rate was 6sccm, the methane flow rate was 160sccm, and the hydrogen flow rate was 200 sccm. The deposition conditions are that the air pressure is 100-150 Pa, the radio frequency power is 80kW, the matrix temperature is 800 ℃, and the reaction duration is 180 min.
S2, taking out the substrate 1 after deposition is finished, and placing the substrate in an HFCVD device for continuous deposition of the silicon-doped diamond coating 2 and the intrinsic diamond coating 4. The deposition conditions for the silicon doped diamond coating 3 were: the hydrogen flow rate was 2000sccm, and 2% ethyl orthosilicate/acetone mixed vapor was mixed into the gas flow, with the ethyl orthosilicate concentration being 5000 ppm. The reaction pressure is 1200Pa, the temperature of the hot wire is 2200 ℃, the temperature of the matrix is about 800 ℃, the bias current is 4A, the deposition time is 2h, and the diameter of the silicon-doped diamond crystal grain obtained by deposition is 200nm-1 μm.
S3, depositing layers of intrinsic diamond coatings 4 on the surfaces of the silicon-doped diamond coatings, wherein the deposition conditions comprise that the hydrogen flow is 2000sccm, the volume ratio of acetone vapor to hydrogen is 1-2%, the reaction pressure is 1200Pa, the temperature of a hot wire is 2200 ℃, the temperature of a matrix is about 800 ℃, the bias current is 4A, the deposition time is 20 hours, and the thickness of the prepared diamond coatings is 15 mu m.
After 20h of intrinsic diamond deposition, high purity diamond with a thickness of 15 μm was prepared on the surface of the steel substrate, and the purity of the diamond was measured by raman spectroscopy, as shown in fig. 2. The map is at 1332cm-1Has sharp diamond peaks, shows that high-purity diamond is obtained by deposition on the surface of steel, and has excellent hardness and wear resistance. And because the lattice constants of the tungsten carbide-silicon doped diamond transition layer are close and the grain sizes are close, the combination is compact and the adhesion is excellent. In the cooling process, the coating does not crack or fall off.
EXAMPLE 2 method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a Steel substrate
A high-speed steel turning tool with a matrix 1 of 100mm x 20mm is selected.
S1, soaking a substrate 1 in an acetone solution for ultrasonic cleaning for 15 minutes, taking out and drying, placing the substrate on a workbench of a PECVD device, and beginning to deposit a tungsten carbide coating 2, firstly vacuumizing a reaction cavity, then introducing mixed gas of methane, tungsten fluoride and hydrogen, wherein the flow rate of the tungsten fluoride gas is 6sccm, the flow rate of methane is 160sccm, the flow rate of hydrogen is 200sccm, the deposition conditions are that the air pressure is 100-flow-assistant 150 Pa, the radio frequency power is 80kW, the substrate temperature is 800 ℃, and the reaction duration is 180 min;
s2, taking out the substrate 1 after deposition is finished, and placing the substrate in an HFCVD device for continuous deposition of the silicon-doped diamond coating 3 and the intrinsic diamond coating 4, wherein the deposition conditions of the silicon-doped diamond coating are as follows: hydrogen flow rate is 2000sccm, and tetraethoxysilane/acetone mixed steam with the concentration of 2% is mixed in the gas flow, and the tetraethoxysilane concentration is 5000 ppm; the reaction pressure is 1200Pa, the temperature of the hot wire is 2200 ℃, the temperature of the matrix is about 800 ℃, the bias current is 4A, the deposition time is 2h, and the diameter of the silicon-doped diamond crystal grain obtained by deposition is 200nm-1 μm;
s3, depositing layers of intrinsic diamond coatings 4 on the surfaces of the silicon-doped diamond coatings 3 under the deposition conditions that the hydrogen flow is 2000sccm, the volume ratio of acetone vapor to hydrogen is 1-2%, the reaction pressure is 4000Pa, the temperature of a hot wire is 2200 ℃, the temperature of a matrix is about 800 ℃, the bias current is 4A, the deposition time is 10 hours, and the thickness of the prepared diamond coatings is 8-10 mu m.
The high-speed steel turning tool prepared by the method has the micron diamond coating on the surface of the front tool surface, is used for turning silicon-aluminum alloy, obviously reduces the abrasion of the rear tool surface of the tool, and prolongs the service life by more than 10 times compared with that before the coating.
EXAMPLE 3 method of preparing a tungsten carbide transition layer-silicon doped diamond composite coating on a Steel substrate
High speed steel turning inserts were selected with a base 1 of 17mm x 5 mm.
S1, soaking a substrate 1 in an acetone solution for ultrasonic cleaning for 15 minutes, then taking out and drying, placing the substrate on a workbench of a PECVD device, starting to deposit a tungsten carbide coating 2, firstly vacuumizing a reaction cavity, and then introducing mixed gas of methane, tungsten fluoride and hydrogen; the flow rate of the tungsten fluoride gas is 6sccm, the flow rate of the methane is 160sccm, and the flow rate of the hydrogen is 200 sccm; the deposition conditions are that the air pressure is 100-150 Pa, the radio frequency power is 80kW, the matrix temperature is 800 ℃, and the reaction duration is 180 min;
s2, taking out the substrate 1 after deposition is finished, and placing the substrate in an HFCVD device for continuous deposition of the silicon-doped diamond coating 3 and the intrinsic diamond coating 4, wherein the deposition conditions of the silicon-doped diamond coating 3 are as follows: hydrogen flow rate is 2000sccm, and tetraethoxysilane/acetone mixed steam with the concentration of 2% is mixed in the gas flow, and the tetraethoxysilane concentration is 5000 ppm; the reaction pressure is 1200Pa, the temperature of the hot wire is 2200 ℃, the temperature of the matrix is about 800 ℃, the bias current is 4A, the deposition time is 2h, and the diameter of the silicon-doped diamond crystal grain obtained by deposition is 200nm-1 μm;
s3, depositing layers of intrinsic diamond coatings 4 on the surfaces of the silicon-doped diamond coatings 3 under the deposition conditions that the hydrogen flow is 2000sccm, the volume ratio of acetone vapor to hydrogen is 1-2%, the reaction pressure is 1200Pa, the temperature of a hot wire is 2200 ℃, the temperature of a matrix is about 800 ℃, the bias current is 4A, the deposition time is 10 hours, and the thickness of the prepared diamond coatings is 8-10 mu m.
layers of nano diamond coatings are deposited on the surface of the high-speed steel turning blade prepared by the method, the turning tool is used for turning silicon-aluminum alloy, the service life is prolonged by more than 10 times compared with that before the coatings, and the surface smoothness of a processed workpiece is also obviously improved.
EXAMPLE 4 method of producing a tungsten carbide transition layer-silicon doped diamond composite coating on a Steel substrate
The substrate 1 is selected to be a low carbon steel sealing ring with the outer diameter phi 55mm, the inner diameter phi 42mm and the thickness of 8 mm.
S1, soaking a substrate 1 in an acetone solution for ultrasonic cleaning for 15 minutes, then taking out and drying, placing the substrate on a workbench of a PECVD device, starting to deposit a tungsten carbide coating 2, firstly vacuumizing a reaction cavity, and then introducing mixed gas of methane, tungsten fluoride and hydrogen; the flow rate of the tungsten fluoride gas is 6sccm, the flow rate of the methane is 160sccm, and the flow rate of the hydrogen is 200 sccm; the deposition conditions are that the air pressure is 100-150 Pa, the radio frequency power is 80kW, the matrix temperature is 800 ℃, and the reaction duration is 180 min;
s2, taking out the substrate 1 after deposition is finished, and placing the substrate in an HFCVD device for continuous deposition of the silicon-doped diamond coating 3 and the intrinsic diamond coating 4, wherein the deposition conditions of the silicon-doped diamond coating 3 are as follows: hydrogen flow rate is 2000sccm, and tetraethoxysilane/acetone mixed steam with the concentration of 2% is mixed in the gas flow, and the tetraethoxysilane concentration is 5000 ppm; the reaction pressure is 1200Pa, the temperature of the hot wire is 2200 ℃, the temperature of the matrix is about 800 ℃, the bias current is 4A, the deposition time is 2h, and the diameter of the silicon-doped diamond crystal grain obtained by deposition is 200nm-1 μm;
s3, layers of intrinsic diamond coatings 4 are deposited on the surfaces of the silicon-doped diamond coatings 3 under the conditions that hydrogen flow is 2000sccm, the volume ratio of acetone vapor to hydrogen is 1-2%, reaction pressure is 1200Pa, the temperature of a hot wire is 2200 ℃, the temperature of a substrate is about 800 ℃, bias current is 4A, deposition time is 5 hours, and the thickness of the prepared diamond coatings is 3-5 mu m.
The intrinsic nano diamond coating crystal grains deposited on the surface of the sealing ring prepared by the method are about 50-60 nanometers, the polishing workload of the diamond coating is obviously reduced due to the good surface smoothness of the coating, the diamond coating on the end face of the sealing ring can reach the mirror surface degree after 2 hours of mechanical grinding and polishing, and Ra can reach 0.05 mu m.
EXAMPLE 5 method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a Steel substrate
The substrate 1 is a 3-inch non-polished stainless steel electrode sheet.
S1, firstly, soaking a substrate 1 in an acetone solution for ultrasonic cleaning for 15 minutes, then taking out and drying, placing the substrate on a workbench of a PECVD device, and beginning to deposit a tungsten carbide coating 2, firstly vacuumizing a reaction cavity, then introducing mixed gas of methane, tungsten fluoride and hydrogen, wherein the flow rate of the tungsten fluoride gas is 6sccm, the flow rate of methane is 160sccm, the flow rate of hydrogen is 200sccm, the deposition conditions are that the air pressure is 100-flow-assistant 150 Pa, the radio frequency power is 80kW, the substrate temperature is 800 ℃, and the reaction duration is 180 min;
s2, taking out the substrate 1 after deposition is finished, and placing the substrate in an HFCVD device for continuous deposition of the silicon-doped diamond coating 3 and the intrinsic diamond coating 4, wherein the deposition conditions of the silicon-doped diamond coating 3 are as follows: hydrogen flow rate is 2000sccm, 2% tetraethyl orthosilicate/acetone mixed steam is mixed into the gas flow, the tetraethyl orthosilicate concentration is 5000ppm, the reaction gas pressure is 1200Pa, the hot wire temperature is 2200 ℃, the matrix temperature is about 800 ℃, the bias current is 4A, the deposition time is 2h, and the diameter of the silicon-doped diamond crystal grain obtained by deposition is 200nm-1 μm;
s3, depositing layers of intrinsic diamond coatings 4 on the surface of the silicon-doped diamond coating 3, wherein the deposition conditions comprise that the hydrogen flow is 2000sccm, the volume ratio of acetone steam to hydrogen is 1-2%, trimethyl borate with the concentration of 5000ppm is doped in acetone, the reaction pressure is 4500Pa, the temperature of a hot wire is 2200 ℃, the temperature of a substrate is about 800 ℃, and the bias current is 4A.
After 20 hours of deposition, a boron-doped diamond coating with the thickness of 20 microns is obtained on the surface of the substrate 1, the surface of the coating is a conductive micron diamond coating, the chemical property is stable, the acid and alkali resistance is good, the service life of the electrode can be greatly prolonged, and compared with metal electrodes such as titanium and the like, the boron-doped diamond coating has the advantages of low cost and easiness in processing.
From the above embodiments, it can be seen that for the purpose of depositing a diamond coating on a low carbon steel or low alloy steel substrate, layers of tungsten carbide-silicon doped diamond transition coatings need to be deposited on the surface of the substrate, the transition layers have nano-crystalline grains and can be tightly combined with the substrate and the surface diamond coating, the hardness of the surface of the substrate is improved by the transition layers, and the excellent wear resistance of the surface diamond is favorably exerted.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.
Claims (8)
1, method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate, characterized in that it comprises the following operative steps:
s1, after a substrate (1) is pretreated, layers of nanocrystalline tungsten carbide coatings (2) are deposited by a plasma enhanced chemical vapor deposition method;
s2, depositing layers of silicon-doped diamond coatings (3) on the surfaces of the nanocrystalline tungsten carbide coatings (2) by adopting a hot wire chemical vapor deposition method;
s3, continuously depositing layers of intrinsic diamond coatings (4) on the surface of the silicon-doped diamond coating (3) by adopting a hot wire chemical vapor deposition method;
the substrate (1) is any types of low-carbon steel or low-alloy steel.
2. The method for preparing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate according to claim 1, wherein in the step S2, the nanocrystalline tungsten carbide coating (2) is deposited by plasma enhanced chemical vapor deposition, and tungsten fluoride, methane and hydrogen are used as raw material gases, wherein the tungsten fluoride gas flow rate is 6sccm, the methane flow rate is 160sccm, and the hydrogen flow rate is 200 sccm.
3. The process for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate according to claim 2, characterized in that in said S2, the deposition conditions for depositing the nanocrystalline tungsten carbide coating (2) by chemical vapour deposition are: the deposition pressure is 100-.
4. The method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate according to claim 1, characterized in that the nanocrystalline tungsten carbide coating (2) has a tungsten carbide grain diameter of 20-50 nm.
5. The method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate according to claim 1, characterised in that said S2 and S3 are continuously deposited using HFCVD method.
6. The method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate according to claim 1, characterized in that during the deposition of said silicon doped diamond coating (3) acetone is used as carbon source, which is doped with tetraethoxysilane as silicon source, at a concentration of 1000-9000 ppm.
7. The method for producing a tungsten carbide transition layer-silicon doped diamond composite coating on a steel substrate according to claim 1, characterized in that, in depositing the silicon doped diamond coating (3), the hydrogen flow is 2000sccm, the volume ratio of the mixed solution to hydrogen is 1-2%, the reaction pressure is 1200Pa, the hot wire temperature is 2200 ℃, the substrate temperature is about 800 ℃, the bias current is 4A, the deposition time is 2h, and the diameter of the deposited silicon doped diamond grains is 200nm-1 μm.
8. The method for preparing the tungsten carbide transition layer-silicon doped diamond composite coating on the steel substrate according to the claim 1, wherein the intrinsic diamond coating is deposited on the surface of the silicon doped diamond coating, the carbon source adopts acetone, the hydrogen flow is 2000sccm, the volume ratio of acetone vapor to hydrogen is 1-2%, the reaction pressure is 1200-4500Pa, the hot wire temperature is 2200 ℃, the substrate temperature is about 800 ℃, the bias current is 4A, and the deposition time is 2-20 h.
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| CN114918460A (en) * | 2022-06-01 | 2022-08-19 | 深圳市金洲精工科技股份有限公司 | Wear-resistant drill bit, and preparation method and application thereof |
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