CN110729372B - Narrow-band near-infrared thermal electron photoelectric detector based on embedded grating structure - Google Patents
Narrow-band near-infrared thermal electron photoelectric detector based on embedded grating structure Download PDFInfo
- Publication number
- CN110729372B CN110729372B CN201910931220.9A CN201910931220A CN110729372B CN 110729372 B CN110729372 B CN 110729372B CN 201910931220 A CN201910931220 A CN 201910931220A CN 110729372 B CN110729372 B CN 110729372B
- Authority
- CN
- China
- Prior art keywords
- grating
- silicon substrate
- metal
- embedded
- photoelectric detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000010936 titanium Substances 0.000 claims abstract description 18
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 22
- 239000010931 gold Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 7
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000609 electron-beam lithography Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 239000002784 hot electron Substances 0.000 abstract description 13
- 230000031700 light absorption Effects 0.000 abstract description 10
- 230000004044 response Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention relates to the technical field of photoelectric sensing, and provides a narrow-band near-infrared thermal electron photoelectric detector based on an embedded grating structure, aiming at solving the problem of low responsivity of the photoelectric detector in the prior art, wherein the narrow-band near-infrared thermal electron photoelectric detector comprises a silicon substrate and a metal grating; a titanium film is arranged between the metal grating and the silicon substrate as an adhesion layer; the metal grating is connected to the top conductive electrode; a bottom conductive electrode is arranged on the back of the silicon; the metal grating is embedded into the silicon substrate, so that the light absorption efficiency and the hot electron generation rate of metal are further improved, the thermalization loss of hot electrons is reduced, a Schottky interface on the side surface of the grating is increased, the collection efficiency of hot electrons transferred into silicon is improved, and the responsivity of the photoelectric detector is further improved; the response wavelength of the detector can be changed by adjusting the period of the metal grating, and the near infrared photoelectric detector with adjustable wavelength is realized.
Description
Technical Field
The invention relates to the technical field of photoelectric sensing, in particular to a narrow-band near-infrared thermal electron photoelectric detector based on an embedded grating structure.
Background
In planar metals, electrons absorb the energy of incident light, transition from the ground state to a higher energy level and are converted to hot electrons, a process known as photo-induced direct excitation. However, since the reflectivity of the planar metal is high, the generation efficiency of hot electrons is extremely low. Since the surface plasmon has a high local electric field enhancement effect, a process of generating thermal electrons by exciting the surface plasmon is increasingly receiving attention. In the metal nanostructure, electrons in the metal resonate with incident electromagnetic waves to excite surface plasmons, and generate thermal electrons in the form of electron transitions under the energy perturbation of the surface plasmons. In this way, the optical signal can be efficiently converted into an electrical signal by the photodetector. However, how to further improve the optical responsivity of the photodetector has been a great challenge.
In recent years, a special light transmission phenomenon has been found in periodic metal pore array structures by which surface plasmons are facilitated to be more efficiently generated and propagated on a metal surface. By preparing a gold grating structure on a silicon substrate, the responsivity of the photoelectric detector can reach 0.6 mA/W under zero bias voltage. Meanwhile, the period of the grating structure is changed to adjust the optical detection wavelength. For example, in CN201110124310.0, silicon nanowire grating resonance enhanced photodetector and its manufacturing method, by designing periodic nano metal grating structure, light is effectively concentrated to the sub-wavelength grating detection region, thereby enhancing the surface transmission and absorption of light. For example, in the application No. cn201810421809.x, absorption-enhanced grating-coupled silicon-based photodetector and a preparation method thereof, periodic metal gratings with two-dimensional structures are coupled with incident light, light is localized on the surface of an active layer by using F-P-like resonance between surface plasmons and slits of the metal gratings, and absorption of the photodetector on the light is enhanced. However, the light absorption efficiency of the metal grating structure needs to be improved by 50%, and the conventional metal grating structure is only contacted with silicon at the bottom to form a planar schottky junction, so that the efficiency of injecting hot electrons into a semiconductor is limited, and the photoelectric detection with high efficiency is not facilitated.
Disclosure of Invention
In order to solve the problem of low responsivity of a photoelectric detector in the prior art, the invention provides a narrow-band near-infrared thermionic photoelectric detector based on an embedded grating structure, which adopts the following technical scheme:
a narrow-band near-infrared thermionic photoelectric detector based on an embedded grating structure comprises a silicon substrate, a titanium film, a metal grating, a top conductive electrode and a bottom conductive electrode; the titanium film and the metal grating are sequentially arranged on the silicon substrate; the bottom conductive electrode is connected to the silicon substrate, and the top conductive electrode is fixedly connected with the metal grating; the titanium film is used as an adhesive layer to connect the silicon substrate and the metal grating; the metal grating is embedded in the silicon substrate.
In the above scheme, the metal grating is located at the uppermost layer, the silicon substrate is the lowermost layer, and the "upper and lower" herein is merely a description of the positional relationship between the respective components, and does not limit the state of the overall structure.
The working principle and the effect of the scheme are as follows: according to the narrow-band near-infrared thermionic photodetector based on the embedded grating structure, the metal material is used as the light absorption layer, the metal grating is embedded into the silicon substrate, so that the light absorption efficiency and the thermionic generation rate of gold are further improved, the thermalization loss of thermionic is reduced, the Schottky interface on the side surface of the grating is increased, and the collection efficiency of thermionic transferred into silicon is improved. The response wavelength of the detector can be adjusted by changing the period of the metal grating, so that narrow-band photoelectric detection is realized.
Furthermore, the metal grating material is one or more of metal or metal alloy, metal nitride and metal oxide.
The preferable metal material can be one of gold, silver, copper and aluminum, and the thickness of the metal grating is 200-500 nm.
Furthermore, the embedding depth of the metal grating embedded into the silicon substrate is 0-600 nm.
Furthermore, the thickness of the titanium thin film layer on the upper layer of the silicon substrate is 1-5 nm.
Further, the bottom conductive electrode on the back surface of the silicon substrate can be one of indium and aluminum.
Drawings
FIG. 1 is a front view of a narrow band near infrared thermionic photodetector structure based on an embedded grating structure;
FIG. 2 is a graph comparing the absorption rate of a transverse magnetic plane wave incident on a photodetector without an embedded grating structure;
FIG. 3 is a graph of optical responsivity contrast at different periods with a photodetector that does not incorporate an embedded grating structure;
FIG. 4 is a flow chart of an experimental preparation of an embedded metal grating structure;
in the figure: 1-silicon substrate, 2-titanium film layer, 3-metal grating, 4-top conductive electrode, 5-bottom conductive electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
The technical scheme of the invention is further explained in detail by combining the drawings in the specification.
Example one
As shown in fig. 1, a narrow-band near-infrared thermal electron photodetector based on an embedded grating structure includes a silicon substrate 1, a titanium thin film 2, a metal grating 3, a top conductive electrode 4, and a bottom conductive electrode 5; the titanium film and the metal grating are sequentially arranged on the silicon substrate; the bottom conductive electrode is connected to the silicon substrate, and the top conductive electrode is fixedly connected with the metal grating; the titanium film is used as an adhesive layer to connect the silicon substrate and the metal grating; the metal grating is embedded in the silicon substrate.
Preferably, the metal grating can be one of gold, silver, copper and aluminum, and the thickness of the gold grating is 100-400 nm.
Preferably, the bottom conductive electrode may be one of indium and aluminum.
Example two
A narrow-band near-infrared thermal electron photoelectric detector based on an embedded grating structure comprises a silicon substrate and a gold grating;
specifically, a titanium film is arranged between the gold grating and the silicon substrate and is used as an adhesion layer;
specifically, a titanium thin film layer and a gold grating are sequentially arranged on a silicon substrate;
the gold grating is embedded into the silicon substrate, and the embedding depth is 0-600 nm.
The gold grating is used for absorbing photons and generating hot electrons, is connected to the gold flat plate and serves as a top conductive electrode, and is positioned on the back of the silicon substrate and provided with a bottom conductive electrode;
the embedded structure formed by the gold grating and the silicon substrate 1 can excite surface plasma optical resonance, so that an electric field is localized at a Schottky interface formed by the gold grating and the silicon substrate, and the absorption rate of the gold grating to photons is remarkably improved.
In some embodiments of the present invention, the response wavelength of the photodetector is varied by adjusting the gold grating period to achieve tunability of the device.
In other embodiments of the present invention, the thickness of the titanium thin film is 1 to 5 nm.
Figure 2 compares the light absorption spectra of a conventional grating structure and an embedded grating structure. The results show that for the embedded grating structure, the light absorption spectra at the embedding depths of 80 nm and 440 nm are almost consistent (84%), which is improved by 50% compared with the traditional grating structure, and this shows that the light absorption efficiency and the hot electron generation rate of the gold grating are improved by embedding the grating into the silicon substrate.
FIG. 3 shows the response spectrum of a thermionic photodetector based on a conventional grating structure and an embedded grating structure at different periods and embedding depths. For a thermionic photodetector based on a traditional grating structure, the responsivity peak is about 0.65 mA/W. Thanks to the enhanced light absorption and the schottky junction formed by the side surface of the gold grating and silicon, the responsivity of the thermionic photoelectric detector based on the embedded grating structure (the embedded depth is 80 nm) is improved by 2.3 times compared with the responsivity of the traditional grating structure (the embedded depth is 0 nm). When the gold grating is completely embedded into silicon (the embedding depth is 440 nm), the responsivity is improved to 2.4 mA/W, which is 3.7 times that of the conventional grating structure. When the period is 1300 nm, the surface plasma resonance wavelength is red-shifted to 1546 nm, and the responsivity of the thermionic photoelectric detector based on the embedded grating structure is improved by 2.7 and 4 times respectively compared with that based on the traditional grating structure. The grating period is continuously increased to 1400 nm, and the peak wavelength responsivity of the thermionic photoelectric detector based on the embedded grating structure is 3.5 times that of the thermionic photoelectric detector based on the traditional grating structure.
As shown in fig. 4, the experimental preparation process of the thermal electron photodetector based on the embedded grating structure. Firstly, spinning 800 nm-thick polymethyl methacrylate (PMMA) on a silicon substrate (step 1), exposing a grating structure with the period of 1200 nm and the width of 950 nm on the PMMA by using Electron Beam Lithography (EBL), and developing and fixing to obtain a nano grating pattern (step 2); then etching the silicon by Reactive Ion Etching (RIE) to 80 nm and 440 nm (step 3); then 5nm titanium and 200 nm gold are respectively plated by electron beam evaporation (step 4), and finally PMMA is removed by a lift-off process to obtain a thermionic photoelectric detection device (step 5). In fig. 4, different filling forms are used for distinguishing different components, and the specific shape and structure of the components are not limited.
According to the scheme, the gold grating is embedded into the silicon substrate, so that the light absorption efficiency and the hot electron generation rate of gold are further improved, the thermalization loss of hot electrons is reduced, and the Schottky interface on the side surface of the grating is increased, so that the collection efficiency of the hot electrons transferred into silicon is improved. In addition, the increased Schottky interface reduces thermalization loss of hot electrons, improves injection efficiency of the hot electrons, and jointly causes the responsivity of the device to reach 2.4 mA/W which is 3.7 times of that based on a traditional grating structure.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (3)
1. A narrow-band near-infrared thermionic photoelectric detector based on an embedded grating structure is characterized in that,
comprises a silicon substrate, a titanium film, a metal grating, a top conductive electrode and a bottom conductive electrode; the titanium film and the metal grating are sequentially arranged on the silicon substrate; the bottom conductive electrode is connected to the silicon substrate, and the top conductive electrode is fixedly connected with the metal grating;
the titanium film is used as an adhesive layer to connect the silicon substrate and the metal grating;
the metal grating is embedded in the silicon substrate; the thickness of the metal grating is 100-400 nm; the embedding depth of the metal grating embedded into the silicon substrate is 0-600 nm; the thickness of the titanium thin film layer is 1-5 nm;
the preparation process comprises the following steps: firstly, spin-coating polymethyl methacrylate on a silicon substrate, exposing a grating structure on the polymethyl methacrylate by electron beam lithography, and obtaining a nano grating pattern through development and fixation; then etching the silicon substrate by using reactive ions; and then, respectively arranging the titanium film and the metal grating on the silicon substrate in sequence by using electron beam evaporation, and finally removing the polymethyl methacrylate by a stripping process to obtain the narrow-band near-infrared thermal electron photoelectric detector based on the embedded grating structure.
2. The narrow-band near-infrared thermionic photodetector based on an embedded grating structure as claimed in claim 1, wherein the metal grating is made of one or more metal alloys, metal nitrides, and metal oxides.
3. The embedded grating structure-based narrowband near-infrared thermionic photodetector of claim 1, wherein the bottom conductive electrode on the back side of the silicon substrate is one of indium and aluminum; the metal in the metal grating comprises: gold, silver, copper, aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910931220.9A CN110729372B (en) | 2019-09-29 | 2019-09-29 | Narrow-band near-infrared thermal electron photoelectric detector based on embedded grating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910931220.9A CN110729372B (en) | 2019-09-29 | 2019-09-29 | Narrow-band near-infrared thermal electron photoelectric detector based on embedded grating structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110729372A CN110729372A (en) | 2020-01-24 |
| CN110729372B true CN110729372B (en) | 2021-07-02 |
Family
ID=69219616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910931220.9A Active CN110729372B (en) | 2019-09-29 | 2019-09-29 | Narrow-band near-infrared thermal electron photoelectric detector based on embedded grating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110729372B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114488624B (en) * | 2022-04-14 | 2022-07-05 | 深圳市晶鸿电子有限公司 | Silicon-based liquid crystal and optical wavelength selection switch |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390657B (en) * | 2013-07-22 | 2016-03-30 | 中国科学院高能物理研究所 | Photronic selectivity grid of a kind of silicon nano column array and preparation method thereof |
| CN104332510A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response |
| CN109524486B (en) * | 2018-09-28 | 2022-09-23 | 暨南大学 | Electric reading optical sensor |
-
2019
- 2019-09-29 CN CN201910931220.9A patent/CN110729372B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110729372A (en) | 2020-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5094385B2 (en) | High response high bandwidth metal-semiconductor-metal photoelectric device | |
| US11194099B2 (en) | Silicon-based optical antenna with reflective layer and preparation method therefor | |
| JP4789752B2 (en) | Photoelectric conversion element and manufacturing method thereof | |
| Pillai et al. | Surface plasmon enhanced silicon solar cells | |
| US10734539B2 (en) | Photodetector | |
| JP7438961B2 (en) | Plasmon rectenna device and manufacturing method | |
| CN111886704A (en) | Light detector | |
| Veenkamp et al. | Plasmonic metal nanocubes for broadband light absorption enhancement in thin-film a-Si solar cells | |
| CN110729372B (en) | Narrow-band near-infrared thermal electron photoelectric detector based on embedded grating structure | |
| CN108630782B (en) | Preparation method of wide detection waveband dual-plasma working photoelectric detector | |
| Wang et al. | Surface state induced filterless SWIR narrow-band Si photodetector | |
| CN210245520U (en) | Narrow-band near-infrared thermal electron photoelectric detector with embedded grating structure | |
| CN112504459A (en) | Anisotropic plasmon resonant cavity graphene polarization detector and design method | |
| CN107390305A (en) | The full light absorber structure of double frequency-band | |
| GB2586262A (en) | Photodetector | |
| El-Toukhy et al. | Tapered plasmonic nanoantennas for energy harvesting applications | |
| RU202307U1 (en) | PHOTOELECTRIC CONVERTER | |
| Du et al. | Effect of the grating shape on the response spectrum of quantum well infrared detector focal plane array | |
| US10566475B2 (en) | High-efficiency photoelectric element and method for manufacturing same | |
| Suo et al. | Photon-trapping array for enhanced midwave infrared photoresponse | |
| US11282970B1 (en) | Wideband detector structures | |
| US20230298897A1 (en) | Semiconductor device and method for manufacturing semiconductor device | |
| WO2011005253A1 (en) | Light amplifying devices for surface enhanced raman spectroscopy | |
| CN217544630U (en) | Narrow-band near-infrared thermal electron photoelectric detector based on ultrathin silicon grating structure | |
| CN213934273U (en) | Near-infrared band dual-band wave absorber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |