CN110727013A - Cadmium tungstate scintillation crystal radiation detector plated with reflection increasing film and special light emitting surface - Google Patents
Cadmium tungstate scintillation crystal radiation detector plated with reflection increasing film and special light emitting surface Download PDFInfo
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- CN110727013A CN110727013A CN201911197540.2A CN201911197540A CN110727013A CN 110727013 A CN110727013 A CN 110727013A CN 201911197540 A CN201911197540 A CN 201911197540A CN 110727013 A CN110727013 A CN 110727013A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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Abstract
The invention relates to a scintillation crystal radiation detector plated with a reflection increasing film and a special light-emitting surface, which aims at the main emergent wave band of a scintillation crystal to design a film layer in a targeted manner, overcomes the difficulty that the research data volume of a film is overlarge and difficult to analyze, obtains a proper reflective film layer material, has good adhesive force with the crystal, has fewer film layers and is easy to realize, further provides the special light-emitting surface design matched with a total reflection coating scheme, and correspondingly improves the measurement efficiency and the measurement precision.
Description
Technical Field
The present invention relates to the measurement of nuclear or X-ray radiation, and in particular to the measurement of X-ray radiation, gamma-ray radiation, corpuscular radiation or cosmic radiation, and in particular to scintillation detectors in which the scintillator is a crystal in the measurement of the intensity of the radiation.
Background
Radiation measurement has played an important role in many fields, such as nuclear power plant and thermal power plant radiation measurement, continuous measurement of radiation dose at a measurement site; the radiation measurement is widely applied to radioactive places such as radioactivity monitoring, industrial nondestructive inspection, hospital treatment and diagnosis, isotope application, waste recovery and the like, the radiation measurement monitors radiation to prevent radiation from generating harm on one hand, and plays a role in monitoring and calculating diagnosis and treatment on the other hand.
Radiation detection is the most fundamental research field of radiation measurement, the basic principle of radiation detectors is that radiation detection is performed by using an ionization excitation effect or other physical or chemical changes caused by radiation in gas, liquid or solid, the known types of detectors include gas detectors, scintillation detectors and semiconductor detectors, the gas detectors are complex in structure and the semiconductor detectors are not ideal in detection efficiency, the scintillation detectors are the most commonly used detectors at present, the scintillation detectors are strictly classified into liquid scintillation detectors and solid scintillation detectors, the liquid scintillation detectors are much less portable than the solid scintillation detectors, and the liquid scintillation detectors are basically used for laboratory research, and the solid detectors for measuring radiation by using scintillation crystals are the most researched detector types in the field.
A typical structure of a conventional scintillation crystal radiation measuring apparatus is shown in fig. 1, in which a scintillation crystal is used as a detection crystal, a reflective layer is disposed on a surface facing an emission source and around the surface, and the remaining surface is an excited light emitting surface, and the excited light emitting surface is connected to a photosensor (typically, a photomultiplier tube, for example) through an optical coupling structure, and the photosensor photomultiplier tube is respectively connected to a high voltage divider and a preamplifier; the input high voltage is loaded on the photomultiplier through the high voltage divider, and the output signal is processed by the preamplifier, the linear amplifier and the multi-channel analyzer in sequence to form the final output signal. Such detectors using scintillation crystals have also been well studied by those skilled in the art because of their ease of use and simplicity of construction to provide the most widely used detectors.
The known reflective layer material usually uses polytetrafluoroethylene or barium sulfate, the arrangement mode of the reflective layer is usually wrapping or filling, the mode is simple, but the protection and reflection effects on the scintillation crystal are not ideal, the requirement of developing a high-performance detector cannot be met, and the further improvement of the energy resolution and the time resolution becomes a difficult problem, on the basis, researchers further provide a film coating mode, the mode comprises a mode of plating an MgF2/CeO2 dielectric film/metal aluminum film on the surface of the crystal, the higher reflectivity at a specific wavelength is realized, a design of adopting two materials Ta2O5/SiO2 for high reflection and a concept of combining three materials HfO2/TiO2/SiO2 are also designed, a scheme design of coating more than 48 layers is even provided for achieving the effect of total reflection, however, the scheme is only theoretically feasible, the more the number of layers of the actual coating film is, the larger the error is, and the effect of promoting after a certain number of layers is achieved is also negligible.
The idea of coating still opens new ideas for those skilled in the art, however, the coating scheme needs to overcome various problems, firstly, the scintillation crystal can be easily coated, the coating needs to have sufficient firmness, and the problems that the film layer and even the crystal itself are not affected by the environment, such as oxidation and deliquescence need to be avoided, are not considered, and the performance of the detector can not be further obviously improved through the existing design regardless of the material selection or the design of the film layer.
At present, how to further improve the energy resolution and the time resolution of the detector is a technical bottleneck for developing a high-performance detector.
In order to break the bottleneck, the technical team of the applicant invests a large amount of funds through careful research, and with the help of a high-flux testing instrument, a high-flux linear experimental method is designed in a large amount of experimental data in a breakthrough manner, so that a plurality of groups of feasible coating schemes are obtained for different scintillation crystals (a plurality of groups of patent layouts are planned on the research results).
In addition, the prior art generally uses an external reflective film and an external antireflection film to improve the output efficiency and the output time of scintillation light, but actually neglects that the scintillation crystal itself is also an important part of a light guide assembly, and particularly after the applicant group provides a latest scheme of guiding scintillation light by a coating film and a lens group, the applicant group unexpectedly finds that the influence of the scintillation crystal itself on the light output efficiency also becomes an important factor which can be considered. The improvement is more obvious especially when the coating film and/or the lens group is matched with the specially designed scintillator emergent face shape, the patent layout of the group aims to protect different scintillation crystals by respectively matching schemes between a reflecting film layer and the scintillator emergent face shape, the scheme relates to a scintillation crystal detection system, and the detector system of other schemes is proposed and applied
It should be noted that, after more than three years of research in this field, the technical team of the applicant has arrived at a plurality of technical achievements, and in order to avoid the prior art that may become the later application or the conflicting application, the technical achievements are purposely proposed to be applied on the same day and combined with different techniques to form a patent layout, the prior art mentioned in the corresponding background art is not necessarily the one that has been disclosed to the public, and some of the prior art that is not disclosed when the technical team of the applicant researches the corresponding technique, so neither the prior art mentioned in the background art nor the claimed prior art can be taken as the evidence that the related art has been known to the public, and can not be the evidence of common knowledge.
Disclosure of Invention
Aiming at the problems and bottlenecks existing in the prior art, the invention provides a corresponding total reflection coating scheme and a matched special light-emitting surface design for a specific scintillation crystal, and provides a cadmium tungstate scintillation crystal radiation detector plated with a reflection increasing film and a special light-emitting surface based on the total reflection coating scheme, and the invention mainly aims to provide a structure capable of further improving the light-emitting rate when a high-performance radiation detector is developed so as to improve the detection efficiency and precision.
In order to achieve the purpose, the invention is realized by the following technical scheme:
the utility model provides a plate scintillation crystal radiation detector of antireflection coating and special play plain noodles, includes scintillation crystal, light sensor, preamplification circuit and multichannel analysis appearance, and the scintillation crystal surface is provided with reflector layer and anti-reflection coating, and the reflector layer sets up at the surface except scintillation light emergence face, and anti-reflection coating sets up at scintillation light emergence face, the scintillation crystal is cadmium tungstate crystal, and scintillation crystal and light sensor set up in the encapsulation casing, its characterized in that: the optical sensor is a photomultiplier, the reflective layer is a reflection enhancement film layer, the reflectivity of the reflection enhancement film layer to the scintillation light of the scintillation crystal is more than 99%, the number of film layers is less than 10, the scintillation light emitting surface is provided with an aspheric surface convex structure matched with the scintillation light wave band of the cadmium tungstate crystal, the main body of the scintillation crystal except the scintillation light emitting surface is a cylinder structure, and the reflection enhancement film layer is deposited on the circumference of the cylinder and the non-convex bottom surface in a physical deposition mode;
furthermore, the reflection increasing film layer is a multilayer film and is obtained by physical deposition, the film layers are sequentially zirconium oxide (ZrO 2), silver (Ag), aluminum (Al), tantalum pentoxide (Ta 2O 5) and silicon dioxide (SiO 2) from the contact surface of the scintillation crystal, and the film thicknesses of the film layers are 40nm, 50nm, 30 nm, 40nm and 100nm respectively;
further, the axis of the cylinder coincides with the central axis of the light receiving surface of the photosensor, and the convex shape of the scintillation light emitting surface satisfies the following aspheric surface formula:
y＝(x2/R)/（1+（1－(k+1) (x2/R2)）1/2+A4x4+A6x6+A8x8+A10x10+A12x12+A14x14+A16x16，
wherein, R is the curvature radius (the length unit of the absolute value is mm) on the central axis, k is the cone coefficient, A4, A6, A8, A10, A12, A14 and A16 are aspheric coefficients, and the values are as follows:
R=-3.84，k=6.46775，A4=-0.02447，A6=-0.03823，A8=0.05579，A10=-0.06482，A12=0.02892，A14=-0.00213，A16=-0.0003；
further, an area of a light receiving surface of the photomultiplier tube is larger than an area of the scintillation light emitting surface by 20%.
Compared with the prior art, the invention has the advantages that:
1) it is common in the art to develop a broad spectrum of total reflection and antireflection films, in order to hopefully increase the energy resolution of the detector and to obtain versatile materials, this concept reduces the difficulty of development because it is expected that large band coverage, rather than extensive research into specific bands, can be achieved by additive combination based on known reflective films, but the improvement of the energy resolution ratio to the detection precision is limited, the invention provides the conception of pertinently designing the film layer aiming at the main emergent wave band of the scintillation crystal, and overcomes the difficulty that the film research data volume is overlarge and difficult to analyze, obtains a proper reflective film layer material, not only has good adhesive force with cadmium tungstate crystal, the number of the layers of the film layers is small, the realization is easy, the overall design of the detector based on the structure can obviously improve the light-emitting rate of the scintillation crystal, and the time resolution and the measurement precision are correspondingly improved;
2) the radiation detector in the prior art usually considers the external reflection and anti-reflection of the scintillator, and rarely starts from the shape and performance of the scintillation crystal, the invention initiatively provides a concept of optimizing the shape of the light emergent surface of the scintillation crystal, an optical light guide structure is formed by the emergent end of the scintillator, the specific shape design of the optical light guide structure considers the matching with the emergent wave band of the scintillation crystal, the emergent probability of emergent light which is totally reflected and is emergent for the first time in the prior art can be increased, the measurement efficiency and the measurement precision are improved, particularly, the effect is more obvious when the optical light guide structure is matched with the reflection increasing film of the invention, and the detection performance can be further improved when a high-performance detector is developed.
Drawings
FIG. 1 is a schematic diagram of a prior art radiation detector;
FIG. 2 is a schematic view of a radiation detector of the present invention;
FIG. 3 shows the band pass test results of the high reflective film of the present invention;
FIG. 4 is a schematic view of a specially designed geometry of a scintillation light exit face of the present invention;
in the figure: r: radiation source S1: scintillation crystal light exit surface S2: scintillation crystal light reflection surface S3: light-receiving surface 1 of photomultiplier: scintillation crystal 2: the optical sensor 3: internal circuit 4: the detector packaging shell 5: external power supplies and circuits.
Detailed Description
The present invention is further explained with reference to the accompanying drawings, as shown in fig. 2, a scintillation crystal radiation detector plated with an anti-reflection film and a special light-emitting surface comprises a scintillation crystal 1, a photosensor 2, a preamplifier circuit and a multichannel analyzer 3, wherein the surface of the scintillation crystal is provided with a light-reflecting layer and an anti-reflection layer, the light-reflecting layer is arranged on a surface S2 except a scintillation light-emitting surface, the anti-reflection layer is arranged on the scintillation light-emitting surface S1, the scintillation crystal is a cadmium tungstate crystal, and the scintillation crystal 1 and the photosensor 2 are arranged in a package shell 4.
Cadmium tungstate is one of conventional scintillation crystals known in the prior art, low-energy visible photons generated in the scintillation crystal are distributed isotropically, the photons can be detected only when being emitted from an emitting surface S1, when the visible photons generated in the crystal reach a tail end scintillation light emitting surface S1, under the influence of the transmittance of the light emitting surface, part of the photons are reflected back to the crystal and are emitted after being reflected for multiple times, the primary light emitting rate of the crystal is reduced, the number of the detected photons reaching a PMT for the first time is reduced, the time resolution of a detector is influenced, in order to improve the primary light emitting rate of large-angle photons of the detector and simultaneously improve the time resolution of the detector, the cadmium tungstate is redesigned from the traditional concept of superposing a periodic film material with optical thickness, and a film with unexpected effect is found from mass data through high-flux experiments, the method is easy to plate on the surface of the crystal, has good adhesion capability and environmental adaptability, is not easily influenced by the environment, designs the shape of the emergent face of a large amount of data around the wavelength of the scintillation light waveband range of the scintillation crystal, obtains the aspheric shape shown in FIG. 4 through practical tests and performance comparison, of course, FIG. 4 is only a schematic diagram, and the specific design of the method is as follows:
the reflection layer uses a reflection increasing film layer which is a multilayer film, the film layers are sequentially zirconium oxide (ZrO 2), silver (Ag), aluminum (Al), tantalum pentoxide (Ta 2O 5) and silicon dioxide (SiO 2) from the contact surface of the scintillation crystal, and the film thicknesses of the layers are respectively 40nm, 50nm, 30 nm, 40nm and 100 nm.
Although the film combination of the invention has originality, each film is a common material, the film coating can be realized by using a conventional film coating method, the common film deposition methods include sol-gel method, physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating, pulse laser deposition and the like, the emission film is prepared by using a physical vapor deposition method of electron beam thermal evaporation in the actual research and development process of the invention, however, the skilled person in the art knows that the film coating mode can be selected according to the actual conditions after the film combination scheme is known.
Before coating, all crystal samples are subjected to ultrasonic cleaning, alcohol soaking wiping, drying and other treatments before coating, and before coating, a plane grinding and polishing method is adopted to carry out precision processing on the scintillation crystal, in the processing, firstly, alumina hard abrasive materials with graded particle sizes are adopted to carry out step-by-step grinding to quickly remove the defects on the surface of the crystal, the light emitting surface of the crystal is ground into a designed shape according to the design, then cerium oxide polishing solution is adopted to carry out precision polishing on the crystal, the roughness of the surface of the processed crystal can reach the nanometer level and is preferably less than 1nm, then, corresponding film layer materials are added into thermal evaporation coating equipment (a commercially available conventional electron beam evaporation coating machine) to carry out coating, after coating, the surface quality of a reflecting film, the evaluation on the aspects of mechanical properties (hardness, film-base binding force and the like) and the like are carried out, and then the reflection performance test is carried out after, the test results are shown in fig. 3.
The design for the exit face is:
the main body of the scintillation crystal except the scintillation light emitting surface S1 is a cylinder structure, the axis of the cylinder is coincident with the central axis of the light receiving surface S3 of a photosensor (a photosensor is taken as an experimental device in the design, however, other photosensors such as a silicon photocell well known to those skilled in the art can also be applied), and the convex shape of the scintillation light emitting surface satisfies the following aspheric surface formula:
y＝(x2/R)/（1+（1－(k+1) (x2/R2)）1/2+A4x4+A6x6+A8x8+A10x10+A12x12+A14x14+A16x16，
wherein, R is the curvature radius (the length unit of the absolute value is mm) on the central axis, k is the cone coefficient, A4, A6, A8, A10, A12, A14 and A16 are aspheric coefficients, and the values are as follows:
R=-3.84，k=6.46775，A4=-0.02447，A6=-0.03823，A8=0.05579，A10=-0.06482，A12=0.02892，A14=-0.00213，A16=-0.0003；
it should be noted that, the aspheric formula is a known formula for lens design, and the difficulty lies in specific aspheric parameter design, after the parameters of the aspheric formula are disclosed, the conventional manufacturing technology in the prior art can easily implement the aspheric processing, and the specific processing manner is not described again.
In combination with the emitting angle of the aspheric surface, the distance between the light receiving surface of the photomultiplier and the scintillation light emitting surface is inconsistent with the traditional experience, the performance is improved after the distance is larger than a certain distance, at the moment, the light receiving surface of the photomultiplier needs to be large enough to cover the emitting range of the emitting light, the area of the light receiving surface of the photomultiplier is larger than the area of the scintillation light emitting surface by at least 20% to completely receive the emitted scintillation light, and the specific distance is obtained by routine tests by a person skilled in the art after the technical point is disclosed per se, and no specific limitation is made.
The reflectivity of the reflection increasing film layer to the main wave band of the scintillation light emitted by the cadmium tungstate crystal is more than 99%, the number of film layers is low and far lower than that of the film layers proposed in the prior art, the number of film layers can be controlled below 10, repeated periodic film coating is not needed, the realization is easy, and the integral counting efficiency of the detector can be obviously improved by combining the design of an emergent surface.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (4)
1. The utility model provides a plate scintillation crystal radiation detector of antireflection coating and special play plain noodles, includes scintillation crystal, light sensor, preamplification circuit and multichannel analysis appearance, and the scintillation crystal surface is provided with reflector layer and anti-reflection coating, and the reflector layer sets up at the surface except scintillation light emergence face, and anti-reflection coating sets up at scintillation light emergence face, the scintillation crystal is cadmium tungstate crystal, and scintillation crystal and light sensor set up in the encapsulation casing, its characterized in that: the optical sensor is a photomultiplier, the reflective layer is a reflection enhancement film layer, the reflectivity of the reflection enhancement film layer to the scintillation light of the scintillation crystal is larger than 99%, the number of film layers is smaller than 10, the scintillation light emitting surface is provided with an aspheric surface convex structure matched with the scintillation light wave band of the cadmium tungstate crystal, the main body of the scintillation crystal except the scintillation light emitting surface is a cylinder structure, and the reflection enhancement film layer is deposited on the circumference of the cylinder and the non-convex bottom surface in a physical deposition mode.
2. The radiation detector of claim 1, wherein: the reflection increasing film layer is a multilayer film and is obtained by physical deposition, the film layers are sequentially zirconium oxide (ZrO 2), silver (Ag), aluminum (Al), tantalum pentoxide (Ta 2O 5) and silicon dioxide (SiO 2) from the contact surface of the scintillation crystal, and the film thicknesses are respectively 40nm, 50nm, 30 nm, 40nm and 100 nm.
3. The radiation detector of claim 1, wherein: the axis of the cylinder coincides with the central axis of the light receiving surface of the light sensor, and the convex shape of the flash light emitting surface satisfies the following aspheric surface formula:
y＝(x2/R)/（1+（1－(k+1) (x2/R2)）1/2+A4x4+A6x6+A8x8+A10x10+A12x12+A14x14+A16x16，
wherein, R is the curvature radius (the length unit of the absolute value is mm) on the central axis, k is the cone coefficient, A4, A6, A8, A10, A12, A14 and A16 are aspheric coefficients, and the values are as follows:
R=-3.84，k=6.46775，A4=-0.02447，A6=-0.03823，A8=0.05579，A10=-0.06482，A12=0.02892，A14=-0.00213，A16=-0.0003。
4. a radiation detector according to any one of claims 1-3, wherein: the area of the light receiving surface of the photomultiplier is greater than 20% of the area of the scintillation light emitting surface.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911197540.2A CN110727013A (en) | 2019-11-29 | 2019-11-29 | Cadmium tungstate scintillation crystal radiation detector plated with reflection increasing film and special light emitting surface |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911197540.2A CN110727013A (en) | 2019-11-29 | 2019-11-29 | Cadmium tungstate scintillation crystal radiation detector plated with reflection increasing film and special light emitting surface |
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